JPS54148484A - Manufacture of semiconductor wafer test device - Google Patents
Manufacture of semiconductor wafer test deviceInfo
- Publication number
- JPS54148484A JPS54148484A JP5780578A JP5780578A JPS54148484A JP S54148484 A JPS54148484 A JP S54148484A JP 5780578 A JP5780578 A JP 5780578A JP 5780578 A JP5780578 A JP 5780578A JP S54148484 A JPS54148484 A JP S54148484A
- Authority
- JP
- Japan
- Prior art keywords
- projection
- film
- etching
- substrate
- featuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE: To obtain a projection electrode featuring a large height and narrow space by repeating etching with use of the resist when plural units of Al projection electrodes on the transparent insulated substrate such as the glass via the Cr diffusion electrode.
CONSTITUTION: Diffusion electrode 12 composed of the conducting film such as Cr or the like is formed by diffusion on transparent insulated substrate such as the glass, and Al conducting film 14 is coated on the entire surface of the substrate. Then photo resist film 15 featuring the size decided in consideration of the erosion by etching is provided at the region where the projection is to be formed. The etching is applied to Al film 14 with a control given in order to obtain the fixed tip area, thus projection 13 being formed. After this, film 15 is removed, and resist film 16 is coated newly on the upper surface and the periphery of projection 13, and then the etching is applied again to change projection 13 into higher projection 17 with film 16 removed. In this case, if the projection space is too narrow to cause exposure of substrate 11 and electrde 12, the etching is repeated more.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5780578A JPS54148484A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor wafer test device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5780578A JPS54148484A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor wafer test device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54148484A true JPS54148484A (en) | 1979-11-20 |
Family
ID=13066123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5780578A Pending JPS54148484A (en) | 1978-05-15 | 1978-05-15 | Manufacture of semiconductor wafer test device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54148484A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184477A (en) * | 1988-01-18 | 1989-07-24 | Hitachi Ltd | Probe head for semiconductor lsi inspecting device and its manufacture |
| JPH01300532A (en) * | 1988-05-30 | 1989-12-05 | Hitachi Ltd | Manufacture of probing head for semiconductor lsi inspection device |
| JPH0252048U (en) * | 1988-10-11 | 1990-04-13 | ||
| JPH03122570A (en) * | 1989-10-05 | 1991-05-24 | Takeda Sangyo Kk | Probe card |
| JPH03179760A (en) * | 1989-10-20 | 1991-08-05 | Sony Tektronix Corp | Manufacture of contact element |
| JP2010521587A (en) * | 2007-03-13 | 2010-06-24 | テッセラ，インコーポレイテッド | Micro-pitch micro contacts and molding method thereof |
| US9030001B2 (en) | 2010-07-27 | 2015-05-12 | Tessera, Inc. | Microelectronic packages with nanoparticle joining |
| US9633971B2 (en) | 2015-07-10 | 2017-04-25 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US10535626B2 (en) | 2015-07-10 | 2020-01-14 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US11973056B2 (en) | 2016-10-27 | 2024-04-30 | Adeia Semiconductor Technologies Llc | Methods for low temperature bonding using nanoparticles |
-
1978
- 1978-05-15 JP JP5780578A patent/JPS54148484A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184477A (en) * | 1988-01-18 | 1989-07-24 | Hitachi Ltd | Probe head for semiconductor lsi inspecting device and its manufacture |
| JPH0810246B2 (en) * | 1988-01-18 | 1996-01-31 | 株式会社日立製作所 | Method for manufacturing probe head for semiconductor LSI inspection device |
| JPH01300532A (en) * | 1988-05-30 | 1989-12-05 | Hitachi Ltd | Manufacture of probing head for semiconductor lsi inspection device |
| JPH0252048U (en) * | 1988-10-11 | 1990-04-13 | ||
| JPH03122570A (en) * | 1989-10-05 | 1991-05-24 | Takeda Sangyo Kk | Probe card |
| JPH03179760A (en) * | 1989-10-20 | 1991-08-05 | Sony Tektronix Corp | Manufacture of contact element |
| JP2010521587A (en) * | 2007-03-13 | 2010-06-24 | テッセラ，インコーポレイテッド | Micro-pitch micro contacts and molding method thereof |
| US9030001B2 (en) | 2010-07-27 | 2015-05-12 | Tessera, Inc. | Microelectronic packages with nanoparticle joining |
| US9633971B2 (en) | 2015-07-10 | 2017-04-25 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US9818713B2 (en) | 2015-07-10 | 2017-11-14 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US10535626B2 (en) | 2015-07-10 | 2020-01-14 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US10892246B2 (en) | 2015-07-10 | 2021-01-12 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US11710718B2 (en) | 2015-07-10 | 2023-07-25 | Adeia Semiconductor Technologies Llc | Structures and methods for low temperature bonding using nanoparticles |
| US11973056B2 (en) | 2016-10-27 | 2024-04-30 | Adeia Semiconductor Technologies Llc | Methods for low temperature bonding using nanoparticles |
| US12027487B2 (en) | 2016-10-27 | 2024-07-02 | Adeia Semiconductor Technologies Llc | Structures for low temperature bonding using nanoparticles |
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