[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5487478A - Photo mask blank substrate - Google Patents

Photo mask blank substrate

Info

Publication number
JPS5487478A
JPS5487478A JP15584477A JP15584477A JPS5487478A JP S5487478 A JPS5487478 A JP S5487478A JP 15584477 A JP15584477 A JP 15584477A JP 15584477 A JP15584477 A JP 15584477A JP S5487478 A JPS5487478 A JP S5487478A
Authority
JP
Japan
Prior art keywords
substrate
mask blank
conductive substance
photo mask
blank substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15584477A
Other languages
Japanese (ja)
Inventor
Masaki Ito
Yoshitake Onishi
Kenji Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15584477A priority Critical patent/JPS5487478A/en
Publication of JPS5487478A publication Critical patent/JPS5487478A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To eliminate charging-up at the time of electron-beam exposure by using a photo mask blank substrate which has a support plate coated with a conductive substance and then with an insulating and shielding substance except one part.
CONSTITUTION: Glass support plate 1 is coated with conductive substance 2 of chromium, etc., and then covered with insulating and shielding layer 3 of metal oxide, silicon, etc., with one part of layer 2 exposed, thereby obtaining a photo mask blank substrate. This substrate is applied with electron-beam resist 5 and after charge eliminating contact terminal 7 is made in contact with exposed part 4 of the conductive substance, the substrate is irradiated with electron beam 6. Since irradiated electrons propagates in conductive substance 2 and escape from exposed part 4 through charge eliminating contact terminal 7, the charging-up of the substrate is eliminated, so that a fine pattern can be formed.
COPYRIGHT: (C)1979,JPO&Japio
JP15584477A 1977-12-23 1977-12-23 Photo mask blank substrate Pending JPS5487478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15584477A JPS5487478A (en) 1977-12-23 1977-12-23 Photo mask blank substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15584477A JPS5487478A (en) 1977-12-23 1977-12-23 Photo mask blank substrate

Publications (1)

Publication Number Publication Date
JPS5487478A true JPS5487478A (en) 1979-07-11

Family

ID=15614721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15584477A Pending JPS5487478A (en) 1977-12-23 1977-12-23 Photo mask blank substrate

Country Status (1)

Country Link
JP (1) JPS5487478A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169240A (en) * 1981-04-09 1982-10-18 Nec Corp Manufacture of mask for x-ray exposure
EP0773477A1 (en) * 1990-09-21 1997-05-14 Dai Nippon Printing Co., Ltd. Phase shift layer - containing photomask, and its production and correction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169240A (en) * 1981-04-09 1982-10-18 Nec Corp Manufacture of mask for x-ray exposure
EP0773477A1 (en) * 1990-09-21 1997-05-14 Dai Nippon Printing Co., Ltd. Phase shift layer - containing photomask, and its production and correction

Similar Documents

Publication Publication Date Title
EP0097417A3 (en) Electron beam lithography
GB1523535A (en) Selfsupporting masks
JPS5487478A (en) Photo mask blank substrate
JPS52120782A (en) Manufacture of semiconductor device
JPS5446479A (en) Negative plate for photo mask
JPS5487479A (en) Photo mask blank substrate
EP0057268A3 (en) Method of fabricating x-ray lithographic masks
JPS54116883A (en) Electron beam exposure method
JPS5652751A (en) Photomask correcting method
JPS5443681A (en) Electron beam light-exposing method
JPS5461478A (en) Chromium plate
JPS5618420A (en) Manufacture of semiconductor device
JPS5556629A (en) Pattern forming method
JPS56140345A (en) Formation of pattern
JPS5568627A (en) Mask for manufucturing integrated circuit and production thereof
JPS57212447A (en) Photomask
JPS5568626A (en) Pattern formation
JPS5374470A (en) Measuring instrument for surface electric potential
JPS53106574A (en) Production of photoetching mask for production of semiconductor device
JPS5594491A (en) Forming method for thick minute metal pattern
JPS5596681A (en) Method of fabricating semiconductor device
JPH0547969B2 (en)
JPS57128030A (en) Exposing method for electron beam
JPS5646228A (en) Manufacture of mask for x rays exposure
JPS5741638A (en) Photomask for electron beam