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JPS5568627A - Mask for manufucturing integrated circuit and production thereof - Google Patents

Mask for manufucturing integrated circuit and production thereof

Info

Publication number
JPS5568627A
JPS5568627A JP14147478A JP14147478A JPS5568627A JP S5568627 A JPS5568627 A JP S5568627A JP 14147478 A JP14147478 A JP 14147478A JP 14147478 A JP14147478 A JP 14147478A JP S5568627 A JPS5568627 A JP S5568627A
Authority
JP
Japan
Prior art keywords
film
metal film
metal
mask
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14147478A
Other languages
Japanese (ja)
Inventor
Shinichi Suzuki
Hisashi Suemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP14147478A priority Critical patent/JPS5568627A/en
Publication of JPS5568627A publication Critical patent/JPS5568627A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To remove accumulated charge from an insulating film by a method wherein a metal film is formed on a given substrate, a part of the metal film surface is removed, and an insulating film is formed on the metal-removed area.
CONSTITUTION: A glass substrate 1 is deposited with a Cr metal film 2 for example. A Cr oxide film 3 is formed on the major surface of the Cr film 2 to reduce its reflectance. Then, a part of the outer periphery of the oxide film 3 is removed to expose a part of the metal film 2. The metal film 2 is connected to the ground in such a way that the exposed surface contacts an earthed electrode. In this state, an electron beam is irradiated to draw a specified image pattern to prepare a mask for use in producing integrated circuits. In this manner, charge accumulated on the oxide film 3 is grounded through the metal film 3 thereby preventing bad effects such as electron beam scattering.
COPYRIGHT: (C)1980,JPO&Japio
JP14147478A 1978-11-16 1978-11-16 Mask for manufucturing integrated circuit and production thereof Pending JPS5568627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14147478A JPS5568627A (en) 1978-11-16 1978-11-16 Mask for manufucturing integrated circuit and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14147478A JPS5568627A (en) 1978-11-16 1978-11-16 Mask for manufucturing integrated circuit and production thereof

Publications (1)

Publication Number Publication Date
JPS5568627A true JPS5568627A (en) 1980-05-23

Family

ID=15292719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14147478A Pending JPS5568627A (en) 1978-11-16 1978-11-16 Mask for manufucturing integrated circuit and production thereof

Country Status (1)

Country Link
JP (1) JPS5568627A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019020749A (en) * 2018-10-26 2019-02-07 信越化学工業株式会社 Mask blank, and method of manufacturing the same
US10488750B2 (en) 2015-03-13 2019-11-26 Shin-Etsu Chemical Co., Ltd. Mask blank and making method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10488750B2 (en) 2015-03-13 2019-11-26 Shin-Etsu Chemical Co., Ltd. Mask blank and making method
JP2019020749A (en) * 2018-10-26 2019-02-07 信越化学工業株式会社 Mask blank, and method of manufacturing the same

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