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JPS5486286A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5486286A
JPS5486286A JP15481777A JP15481777A JPS5486286A JP S5486286 A JPS5486286 A JP S5486286A JP 15481777 A JP15481777 A JP 15481777A JP 15481777 A JP15481777 A JP 15481777A JP S5486286 A JPS5486286 A JP S5486286A
Authority
JP
Japan
Prior art keywords
type
region
polycrystal
diodes
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15481777A
Other languages
Japanese (ja)
Other versions
JPS6153862B2 (en
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15481777A priority Critical patent/JPS5486286A/en
Publication of JPS5486286A publication Critical patent/JPS5486286A/en
Publication of JPS6153862B2 publication Critical patent/JPS6153862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To shorten a delay time with the saturation of a transistor prevented by using a PN junction formed in polycrystal Si as a clamp diode and by making it serve for a Schottky diode. CONSTITUTION:On N<+>-type Si substrate 11, N-type layer 12 is epitaxy-grown and covered with a SiO2 film and an opening is made, thereby forming P-type base region 13 of NPN transistor Tr34 and P-type emitter region 13' of model PNP transistor Tr35 as an injector. Next, N<+>-type collector region 14 of Tr34 is provided into region 13, SiO2 near the junction is removed and P-type polycrystal Si film 16 is adhered here and heat-treated to generate polycrystal Si diode 16'' on region 14. In this way, diodes 31 to 33 of polycrystal Si are connected between the collector and base of NPN switching Tr34 constituting the circuit of I<2>L and those diodes are operated as Schottky diodes, thereby shortening the delay time of I<2>L.
JP15481777A 1977-12-21 1977-12-21 Semiconductor device Granted JPS5486286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15481777A JPS5486286A (en) 1977-12-21 1977-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15481777A JPS5486286A (en) 1977-12-21 1977-12-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5486286A true JPS5486286A (en) 1979-07-09
JPS6153862B2 JPS6153862B2 (en) 1986-11-19

Family

ID=15592514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15481777A Granted JPS5486286A (en) 1977-12-21 1977-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5486286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102521433A (en) * 2011-11-21 2012-06-27 上海华虹Nec电子有限公司 Equivalent circuit of positive-intrinsic negative (PIN) diode and parameter acquisition method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102521433A (en) * 2011-11-21 2012-06-27 上海华虹Nec电子有限公司 Equivalent circuit of positive-intrinsic negative (PIN) diode and parameter acquisition method thereof

Also Published As

Publication number Publication date
JPS6153862B2 (en) 1986-11-19

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