JPS56115555A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS56115555A JPS56115555A JP1813980A JP1813980A JPS56115555A JP S56115555 A JPS56115555 A JP S56115555A JP 1813980 A JP1813980 A JP 1813980A JP 1813980 A JP1813980 A JP 1813980A JP S56115555 A JPS56115555 A JP S56115555A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- metal
- forming
- input circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003071 parasitic effect Effects 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent the erroneous operation of the semiconductor integrated circuit device by forming an PNP transistor isolated at P-N junction on a P type substrate, connecting an SBD between B and C, and setting the minority carrier lifetime less than predetermined value in the substrate, thereby eliminating the parasitic effect of an input circuit. CONSTITUTION:An input circuit N<+> type buried layer 2 and an NPN transistor N<+> type buried layer 12 are formed on the P type substrate 1, N type epitaxial layers 3, 13 are grown, and isolated with P type isolating regions 8, 8', 8''. A P type base 16 and an N type emitter 15 are formed to complete the NPN transistor, and metal 9 forming the P type regions 4, 4' and SBD5, and metal 11 forming the N type region 6, and SBD7 are formed to complete the input circuit. The metal 9 is connected to the minimum potential, and the metal 11 is connected to the base 16. Gold is diffused from the back surface to set the minority carrier lifetime less than 10<-6>. Thus, the parasitic effect can be cancelled in the region 3-region 8'-region 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1813980A JPS56115555A (en) | 1980-02-16 | 1980-02-16 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1813980A JPS56115555A (en) | 1980-02-16 | 1980-02-16 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56115555A true JPS56115555A (en) | 1981-09-10 |
| JPS6223466B2 JPS6223466B2 (en) | 1987-05-22 |
Family
ID=11963262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1813980A Granted JPS56115555A (en) | 1980-02-16 | 1980-02-16 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56115555A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02102605U (en) * | 1989-02-02 | 1990-08-15 | ||
| JPH02224378A (en) * | 1989-02-27 | 1990-09-06 | Hamamatsu Photonics Kk | Light emitting element |
-
1980
- 1980-02-16 JP JP1813980A patent/JPS56115555A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223466B2 (en) | 1987-05-22 |
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