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JPS5365076A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365076A
JPS5365076A JP14085776A JP14085776A JPS5365076A JP S5365076 A JPS5365076 A JP S5365076A JP 14085776 A JP14085776 A JP 14085776A JP 14085776 A JP14085776 A JP 14085776A JP S5365076 A JPS5365076 A JP S5365076A
Authority
JP
Japan
Prior art keywords
semiconductor device
eprestage
darlington
emitter
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14085776A
Other languages
Japanese (ja)
Inventor
Haruki Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14085776A priority Critical patent/JPS5365076A/en
Publication of JPS5365076A publication Critical patent/JPS5365076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:Ti insert and form a diode on the same chip and cause high speed switching by connecting th eprestage base of Darlington-connected NPN elements to a cathode and the emitter to an anode.
JP14085776A 1976-11-22 1976-11-22 Semiconductor device Pending JPS5365076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14085776A JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14085776A JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5365076A true JPS5365076A (en) 1978-06-10

Family

ID=15278342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14085776A Pending JPS5365076A (en) 1976-11-22 1976-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (en) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd darlington transistor
JPH01300560A (en) * 1988-05-27 1989-12-05 Matsushita Electron Corp Semiconductor device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110166A (en) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd darlington transistor
JPH0236061B2 (en) * 1982-12-15 1990-08-15 Sansha Electric Mfg Co Ltd
JPH01300560A (en) * 1988-05-27 1989-12-05 Matsushita Electron Corp Semiconductor device and manufacture thereof

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