JPS5471589A - Production of gan light emitting element - Google Patents
Production of gan light emitting elementInfo
- Publication number
- JPS5471589A JPS5471589A JP13861977A JP13861977A JPS5471589A JP S5471589 A JPS5471589 A JP S5471589A JP 13861977 A JP13861977 A JP 13861977A JP 13861977 A JP13861977 A JP 13861977A JP S5471589 A JPS5471589 A JP S5471589A
- Authority
- JP
- Japan
- Prior art keywords
- light emission
- impurity
- layer
- gan
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 4
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021478 group 5 element Inorganic materials 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910001425 magnesium ion Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To make an LED of highly efficient blue light emission and superior electric characteristics by separately performing injection of the impurity which becomes light emission centers and injection of the impurity for forming junction for permitting effective accomplishment of current injection respectively at optimum concentrations. CONSTITUTION:Mg ion beams 3 are radiated to the GaN 2 having been doped with Zn (light emission center) on a sapphire substrate 1 to implant ions and the distribution is flattened through energy multiple implantation, making total dose quantity 1.9X10<15>cm<-2>. Next, the surface is covered with CVD SiO2 5 and the substrate is treated in N2 for 1 to 20 hours at 1050 deg.C, after which the film 5 is removed. Grooves 6 thicker than the thickness of the i layer 4 having been produced by the ion implantation are made. In is deposited to the surface and the grooves 6 to provide electrodes. Besides Mg, other group II element have similar effect. In the formation of the i layer, other group V elements may be used. The superior GaN light emitting element may be obtained by implanting impurities with good controllability after doping of the impurity which becomes light emission centers thereby providing the i layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13861977A JPS5471589A (en) | 1977-11-17 | 1977-11-17 | Production of gan light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13861977A JPS5471589A (en) | 1977-11-17 | 1977-11-17 | Production of gan light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5471589A true JPS5471589A (en) | 1979-06-08 |
Family
ID=15226300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13861977A Pending JPS5471589A (en) | 1977-11-17 | 1977-11-17 | Production of gan light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5471589A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053928U (en) * | 1991-06-28 | 1993-01-22 | 豊田合成株式会社 | Luminous pointer |
| JPH05183189A (en) * | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | Manufacture of p-type gallium nitride based compound semiconductor |
| JPH0669543A (en) * | 1992-08-20 | 1994-03-11 | Toyoda Gosei Co Ltd | Gallium nitride-based compound semiconductor light-emitting element |
| US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| JPH07263749A (en) * | 1994-03-22 | 1995-10-13 | Toyoda Gosei Co Ltd | Manufacture of iii group nitride semiconductor |
| US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
-
1977
- 1977-11-17 JP JP13861977A patent/JPS5471589A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593599B1 (en) | 1990-02-28 | 2003-07-15 | Japan Science And Technology Corporation | Light-emitting semiconductor device using gallium nitride group compound |
| US6984536B2 (en) | 1990-02-28 | 2006-01-10 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
| US6249012B1 (en) | 1990-02-28 | 2001-06-19 | Toyoda Gosei Co., Ltd. | Light emitting semiconductor device using gallium nitride group compound |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US6472690B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Gallium nitride group compound semiconductor |
| US6472689B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Light emitting device |
| JPH053928U (en) * | 1991-06-28 | 1993-01-22 | 豊田合成株式会社 | Luminous pointer |
| JPH05183189A (en) * | 1991-11-08 | 1993-07-23 | Nichia Chem Ind Ltd | Manufacture of p-type gallium nitride based compound semiconductor |
| US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| USRE36747E (en) * | 1992-07-23 | 2000-06-27 | Toyoda Gosei Co., Ltd | Light-emitting device of gallium nitride compound semiconductor |
| JPH0669543A (en) * | 1992-08-20 | 1994-03-11 | Toyoda Gosei Co Ltd | Gallium nitride-based compound semiconductor light-emitting element |
| JPH07263749A (en) * | 1994-03-22 | 1995-10-13 | Toyoda Gosei Co Ltd | Manufacture of iii group nitride semiconductor |
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