JPS5471590A - Gan light emitting element and production of the same - Google Patents
Gan light emitting element and production of the sameInfo
- Publication number
- JPS5471590A JPS5471590A JP13862077A JP13862077A JPS5471590A JP S5471590 A JPS5471590 A JP S5471590A JP 13862077 A JP13862077 A JP 13862077A JP 13862077 A JP13862077 A JP 13862077A JP S5471590 A JPS5471590 A JP S5471590A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- grooves
- light emission
- current controlling
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 239000003086 colorant Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 229910001425 magnesium ion Inorganic materials 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To control light emitting color through current controlling by using two kinds of impurities of different light emission wavelengths. CONSTITUTION:Zn-doped GaN 2 is formed on a sapphire substrate, and Mg ion beams 3 are radiated to create an implantation layer 4 on teh crystl surface. The ion implantation is performed by an energy multiple system to flatten the impurity distribution to a dose quantity of 1.9X 10<15>cm<-2>. Next, the surface is covered with CVD SiO2 5 and the substrate is treated for 1 to 20 hours at 1050 deg.C in N2, after which SiO2 is removed. Grooves 6 thicker than the thickness of i layer 4 produced through the ion implantation are provided. In is deposited on the crystal surface and grooves 6 to provide electrode. This constitution enables light emission colors to be readily changed through current controlling under the condition of a constant brightness. This may be embodied even by combining Cd, Hg, Be, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52138620A JPS5931232B2 (en) | 1977-11-17 | 1977-11-17 | GaN light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52138620A JPS5931232B2 (en) | 1977-11-17 | 1977-11-17 | GaN light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5471590A true JPS5471590A (en) | 1979-06-08 |
JPS5931232B2 JPS5931232B2 (en) | 1984-07-31 |
Family
ID=15226319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52138620A Expired JPS5931232B2 (en) | 1977-11-17 | 1977-11-17 | GaN light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931232B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02257678A (en) * | 1989-03-30 | 1990-10-18 | Univ Nagoya | Manufacture of gallium nitride compound semiconductor light-emitting device |
US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US7436045B2 (en) | 2004-03-04 | 2008-10-14 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
US7453091B2 (en) | 2004-03-04 | 2008-11-18 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08255544A (en) * | 1995-03-20 | 1996-10-01 | Nec Corp | Lead-less surface mounting relay |
-
1977
- 1977-11-17 JP JP52138620A patent/JPS5931232B2/en not_active Expired
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069257B2 (en) * | 1989-03-30 | 1994-02-02 | 名古屋大学長 | Method for producing gallium nitride compound semiconductor light emitting device |
JPH02257678A (en) * | 1989-03-30 | 1990-10-18 | Univ Nagoya | Manufacture of gallium nitride compound semiconductor light-emitting device |
US6472689B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Light emitting device |
US6472690B1 (en) | 1990-02-28 | 2002-10-29 | Toyoda Gosei Co., Ltd. | Gallium nitride group compound semiconductor |
US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US6984536B2 (en) | 1990-02-28 | 2006-01-10 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US6249012B1 (en) | 1990-02-28 | 2001-06-19 | Toyoda Gosei Co., Ltd. | Light emitting semiconductor device using gallium nitride group compound |
US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
US6593599B1 (en) | 1990-02-28 | 2003-07-15 | Japan Science And Technology Corporation | Light-emitting semiconductor device using gallium nitride group compound |
US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
USRE36747E (en) * | 1992-07-23 | 2000-06-27 | Toyoda Gosei Co., Ltd | Light-emitting device of gallium nitride compound semiconductor |
US7436045B2 (en) | 2004-03-04 | 2008-10-14 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
US7453091B2 (en) | 2004-03-04 | 2008-11-18 | Showa Denko K.K. | Gallium nitride-based semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5931232B2 (en) | 1984-07-31 |
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