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JPS5412573A - Junction type field effect transistor and production of the same - Google Patents

Junction type field effect transistor and production of the same

Info

Publication number
JPS5412573A
JPS5412573A JP7816177A JP7816177A JPS5412573A JP S5412573 A JPS5412573 A JP S5412573A JP 7816177 A JP7816177 A JP 7816177A JP 7816177 A JP7816177 A JP 7816177A JP S5412573 A JPS5412573 A JP S5412573A
Authority
JP
Japan
Prior art keywords
production
same
field effect
effect transistor
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7816177A
Other languages
Japanese (ja)
Inventor
Seiichi Nagata
Tsuneo Tanaka
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7816177A priority Critical patent/JPS5412573A/en
Publication of JPS5412573A publication Critical patent/JPS5412573A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a J-FET of a short gate length and high performance by changing the composition of conductive region and source and drain regions and performing composition selecting etching thereby performing isolation between respective regions while facilitating controlling of etching depth.
COPYRIGHT: (C)1979,JPO&Japio
JP7816177A 1977-06-29 1977-06-29 Junction type field effect transistor and production of the same Pending JPS5412573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7816177A JPS5412573A (en) 1977-06-29 1977-06-29 Junction type field effect transistor and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7816177A JPS5412573A (en) 1977-06-29 1977-06-29 Junction type field effect transistor and production of the same

Publications (1)

Publication Number Publication Date
JPS5412573A true JPS5412573A (en) 1979-01-30

Family

ID=13654191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7816177A Pending JPS5412573A (en) 1977-06-29 1977-06-29 Junction type field effect transistor and production of the same

Country Status (1)

Country Link
JP (1) JPS5412573A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JPS58105577A (en) * 1981-12-18 1983-06-23 Oki Electric Ind Co Ltd Preparation of semiconductor device
JPS58107678A (en) * 1981-12-21 1983-06-27 Fujitsu Ltd Semiconductor device
JPS5961073A (en) * 1982-09-29 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPS63164477A (en) * 1986-12-19 1988-07-07 アメリカン　テレフォン　アンド　テレグラフ　カムパニー Manufacture of field effect transistor with self-aligning gate
US6262444B1 (en) 1997-04-23 2001-07-17 Nec Corporation Field-effect semiconductor device with a recess profile

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JPS58105577A (en) * 1981-12-18 1983-06-23 Oki Electric Ind Co Ltd Preparation of semiconductor device
JPS58107678A (en) * 1981-12-21 1983-06-27 Fujitsu Ltd Semiconductor device
JPS5961073A (en) * 1982-09-29 1984-04-07 Fujitsu Ltd Manufacture of semiconductor device
JPH0320063B2 (en) * 1982-09-29 1991-03-18 Fujitsu Ltd
JPS63164477A (en) * 1986-12-19 1988-07-07 アメリカン　テレフォン　アンド　テレグラフ　カムパニー Manufacture of field effect transistor with self-aligning gate
US6262444B1 (en) 1997-04-23 2001-07-17 Nec Corporation Field-effect semiconductor device with a recess profile

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