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JPS5315081A - Junction type field effect transistor and its production - Google Patents

Junction type field effect transistor and its production

Info

Publication number
JPS5315081A
JPS5315081A JP8981576A JP8981576A JPS5315081A JP S5315081 A JPS5315081 A JP S5315081A JP 8981576 A JP8981576 A JP 8981576A JP 8981576 A JP8981576 A JP 8981576A JP S5315081 A JPS5315081 A JP S5315081A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8981576A
Other languages
Japanese (ja)
Inventor
Takaaki Kitada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8981576A priority Critical patent/JPS5315081A/en
Publication of JPS5315081A publication Critical patent/JPS5315081A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To improve high frequency characteristics by reducing the spacing between source region and gate junction region which determine gate length and source resistivity through controlling of overetching.
COPYRIGHT: (C)1978,JPO&Japio
JP8981576A 1976-07-27 1976-07-27 Junction type field effect transistor and its production Pending JPS5315081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8981576A JPS5315081A (en) 1976-07-27 1976-07-27 Junction type field effect transistor and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8981576A JPS5315081A (en) 1976-07-27 1976-07-27 Junction type field effect transistor and its production

Publications (1)

Publication Number Publication Date
JPS5315081A true JPS5315081A (en) 1978-02-10

Family

ID=13981225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8981576A Pending JPS5315081A (en) 1976-07-27 1976-07-27 Junction type field effect transistor and its production

Country Status (1)

Country Link
JP (1) JPS5315081A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
JPS5619678A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Junction-type field effect semiconductor device
JPS57178376A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Junction type field-effect transistor
US4380496A (en) * 1979-03-22 1983-04-19 Uop Inc. Mechanical dewatering process utilizing a nonuniform screw conveyor
JPS59213172A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS60196182A (en) * 1984-03-19 1985-10-04 Sanei Seisakusho:Kk Drying of sake lees
JPS60220975A (en) * 1984-04-18 1985-11-05 Toshiba Corp GaAs field effect transistor and its manufacturing method
JPH01200680A (en) * 1988-02-05 1989-08-11 Hitachi Ltd Superconducting field-effect transistor
JP2012523697A (en) * 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション Enhancement mode GaN HEMT device and manufacturing method thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380496A (en) * 1979-03-22 1983-04-19 Uop Inc. Mechanical dewatering process utilizing a nonuniform screw conveyor
JPS55153377A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Production of semiconductor device
JPS5619678A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Junction-type field effect semiconductor device
JPS57178376A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Junction type field-effect transistor
JPS59213172A (en) * 1983-05-19 1984-12-03 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS60196182A (en) * 1984-03-19 1985-10-04 Sanei Seisakusho:Kk Drying of sake lees
JPS634474B2 (en) * 1984-03-19 1988-01-29 Sanei Seisakusho Kk
JPS60220975A (en) * 1984-04-18 1985-11-05 Toshiba Corp GaAs field effect transistor and its manufacturing method
JPH0224023B2 (en) * 1984-04-18 1990-05-28 Tokyo Shibaura Electric Co
JPH01200680A (en) * 1988-02-05 1989-08-11 Hitachi Ltd Superconducting field-effect transistor
JP2012523697A (en) * 2009-04-08 2012-10-04 エフィシエント パワー コンヴァーション コーポレーション Enhancement mode GaN HEMT device and manufacturing method thereof
US8890168B2 (en) 2009-04-08 2014-11-18 Efficient Power Conversion Corporation Enhancement mode GaN HEMT device

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