JPS51126772A - Electrolytic effect type semiconductor unit - Google Patents
Electrolytic effect type semiconductor unitInfo
- Publication number
- JPS51126772A JPS51126772A JP50051019A JP5101975A JPS51126772A JP S51126772 A JPS51126772 A JP S51126772A JP 50051019 A JP50051019 A JP 50051019A JP 5101975 A JP5101975 A JP 5101975A JP S51126772 A JPS51126772 A JP S51126772A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- effect type
- semiconductor unit
- electrolytic effect
- electrolytic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To reduce the size of tip by eliminating island areas among gates from multi-input, multi-gate MOS FET.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50051019A JPS51126772A (en) | 1975-04-25 | 1975-04-25 | Electrolytic effect type semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50051019A JPS51126772A (en) | 1975-04-25 | 1975-04-25 | Electrolytic effect type semiconductor unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51126772A true JPS51126772A (en) | 1976-11-05 |
Family
ID=12875069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50051019A Pending JPS51126772A (en) | 1975-04-25 | 1975-04-25 | Electrolytic effect type semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51126772A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52119190A (en) * | 1976-03-31 | 1977-10-06 | Toshiba Corp | Semiconductor integration circuit |
JPS6062153A (en) * | 1983-09-08 | 1985-04-10 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Resistive gate type field effect transistor logic circuit |
JPH02201964A (en) * | 1989-01-30 | 1990-08-10 | Sumitomo Metal Ind Ltd | Mos type transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864889A (en) * | 1971-12-08 | 1973-09-07 | ||
JPS4990886A (en) * | 1972-12-28 | 1974-08-30 |
-
1975
- 1975-04-25 JP JP50051019A patent/JPS51126772A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4864889A (en) * | 1971-12-08 | 1973-09-07 | ||
JPS4990886A (en) * | 1972-12-28 | 1974-08-30 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52119190A (en) * | 1976-03-31 | 1977-10-06 | Toshiba Corp | Semiconductor integration circuit |
JPS6062153A (en) * | 1983-09-08 | 1985-04-10 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Resistive gate type field effect transistor logic circuit |
JPH056351B2 (en) * | 1983-09-08 | 1993-01-26 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPH02201964A (en) * | 1989-01-30 | 1990-08-10 | Sumitomo Metal Ind Ltd | Mos type transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5435689A (en) | Semiconductor integrated circuit device | |
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS51140642A (en) | Driving circuit | |
JPS5387187A (en) | Semiconductor driving circuit | |
JPS51126772A (en) | Electrolytic effect type semiconductor unit | |
JPS525273A (en) | Transistor | |
JPS5213500A (en) | Continuous production of beta silicon nitride | |
JPS5412573A (en) | Junction type field effect transistor and production of the same | |
JPS5336656A (en) | Current mirror circuit | |
JPS5273681A (en) | Field effect transistor | |
JPS538072A (en) | Semiconductor device | |
JPS5239382A (en) | Gate control semiconductor element | |
JPS5227279A (en) | Semiconductor unit | |
JPS5221776A (en) | Semiconductor unit | |
JPS5280788A (en) | Semiconductor memory cell | |
JPS5270774A (en) | Semiconductor integrated circuit unit | |
JPS5410684A (en) | Using method of schottky gate type field effect transistors | |
JPS51123064A (en) | Forming process of bonding-pad area | |
JPS51114075A (en) | Construction of field effect transistor | |
JPS5212582A (en) | Insulated gate type semi-conductor device | |
JPS5424574A (en) | Manufacture for semiconductor device | |
JPS5378781A (en) | Mos type integrated circuit | |
JPS51129183A (en) | Manufacturing method of semiconductor | |
JPS51117581A (en) | Manufacturing method of mos type semiconductor equipment | |
JPS5280746A (en) | Memory switch unit |