JPH11511194A - 熱硬化性反射防止性コーティングおよびその製造方法 - Google Patents
熱硬化性反射防止性コーティングおよびその製造方法Info
- Publication number
- JPH11511194A JPH11511194A JP9509244A JP50924497A JPH11511194A JP H11511194 A JPH11511194 A JP H11511194A JP 9509244 A JP9509244 A JP 9509244A JP 50924497 A JP50924497 A JP 50924497A JP H11511194 A JPH11511194 A JP H11511194A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- arc
- dye
- acid
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- ZQAZWHSZYVXGMP-UHFFFAOYSA-N acridine-9-carboxylic acid;hydrate Chemical compound O.C1=CC=C2C(C(=O)O)=C(C=CC=C3)C3=NC2=C1 ZQAZWHSZYVXGMP-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
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- HUMNYLRZRPPJDN-KWCOIAHCSA-N benzaldehyde Chemical group O=[11CH]C1=CC=CC=C1 HUMNYLRZRPPJDN-KWCOIAHCSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000011097 chromatography purification Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-O diazynium Chemical compound [NH+]#N IJGRMHOSHXDMSA-UHFFFAOYSA-O 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002118 epoxides Chemical group 0.000 description 1
- ZIUSEGSNTOUIPT-UHFFFAOYSA-N ethyl 2-cyanoacetate Chemical compound CCOC(=O)CC#N ZIUSEGSNTOUIPT-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- FVKGRHSPCZORQC-UHFFFAOYSA-N formaldehyde;toluene Chemical compound O=C.CC1=CC=CC=C1 FVKGRHSPCZORQC-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002689 maleic acids Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000007040 multi-step synthesis reaction Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 150000002913 oxalic acids Chemical class 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical class C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- DKZBBWMURDFHNE-UHFFFAOYSA-N trans-coniferylaldehyde Natural products COC1=CC(C=CC=O)=CC=C1O DKZBBWMURDFHNE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- FGQOOHJZONJGDT-UHFFFAOYSA-N vanillin Natural products COC1=CC(O)=CC(C=O)=C1 FGQOOHJZONJGDT-UHFFFAOYSA-N 0.000 description 1
- 235000012141 vanillin Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/14—Polycondensates modified by chemical after-treatment
- C08G59/1433—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds
- C08G59/1438—Polycondensates modified by chemical after-treatment with organic low-molecular-weight compounds containing oxygen
- C08G59/1455—Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/136—Coating process making radiation sensitive element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
- Y10S522/904—Monomer or polymer contains initiating group
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Epoxy Resins (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. a. 予め選択されたフェノール−もしくはカルボン酸−官能性染料と 、2.0より大きく10未満であるエポキシ官能価を有するポリ(エポキシド) 樹脂との染料−グラフト化ヒドロキシル−官能性オリゴマー反応生成物;該生成 物は基底層のARC塗布に有効な光−吸収特性を有する; b. メラミン、尿素、ベンゾグアナミンまたはグリコルリルから誘導された アルキル化アミノプラスト架橋剤; c. プロトン酸硬化触媒;および d. 低ないし中沸点アルコールを含む溶媒系;該溶媒系中、アルコールは総 溶媒含量の少なくとも二十(20)重量%を占めおよびアルコールのモル比はア ミノプラストの当量メチロール単位につき少なくとも4対1(4:1)である; からなり、そして e. ポリ(エポキシド)分子から誘導されたエーテルもしくはエステル結合 を有する、改良されたARC組成物であって; 該改良されたARCは、ARCsの熱硬化作用によってレジスト/ARC成分 の相互混合をなくし、標的露光およびARC層厚において改善された光学濃度を 提供し、ならびに高溶解度差を示す高分子量熱可塑性ARCバインダーの必要性 をなくす、前記改良されたARC組成物。 2. プロトン酸触媒が80g/モルより大きい式量を有しアルコール含有溶 媒系が沸点70℃ないし180℃を有する請求項1記載の組成物。 3. ポリ(エポキシド)樹脂がビスフェノールA−エピクロロヒドリン樹脂 生成物、エポキシノボラック、o−クレゾールエポキシノボラック、ポリグリシ ジルエーテル、ポリグリシジルアミン、脂環式エポキシドおよびポリグリシジル エステルからなる群から選択される請求項1記載の記載の組成物。 4. ポリ(エポキシド)樹脂が3.5より大きいエポキシ官能価を有するエ ポキシノボラックまたはo−クレゾールエポキシノボラックである請求項1記載 の組成物。 5. 染料成分が標的露光において、式量100gにつき少なくとも10,0 00(リットル /モル−cm)のモル吸光係数を有する請求項1記載の組成物 。 6. 染料成分がg線吸収染料でありおよびARCがg線露光において少なく とも3.5/ミクロン厚の光学濃度を有する請求項5記載の組成物。 7. g線吸収染料がアゾベンゼンのフェノール官能性誘導体およびカルボン 酸官能性誘導体よりなる群から選択される請求項6記載の組成物。 8. 染料成分がi線吸収染料でありおよびARCがi線露光において少なく とも5.0/ミクロン厚の光学濃度を有する請求項5記載の組成物。 9. i線吸収染料がアゾ、メチンおよびカルコンよりなる群から選択される フェノール官能性染料である請求項8記載の組成物。 10. i線染料成分が4−ヒドロキシ−β,β−ジシアノスチレンである請求 項8記載の組成物。 11. 染料成分がdeep紫外線吸収染料でありおよびARCがdeep紫外 線露光において少なくとも7.0/ミクロン厚の光学濃度を有する請求項5記載 の組成物。 12. deep紫外線吸収染料がヒドロキシル官能性アセトフェノン、ベンゾ フェノン、ビフェニル、ナフタレンおよびキノリンよりなる群から選択される請 求項11記載の組成物。 13. deep紫外線吸収染料が2−ヒドロキシキナルジンである請求項12 記載の組成物。 14. deep紫外線吸収染料が芳香族多環式カルボン酸よりなる群から選択 される請求項11記載の組成物。 15. deep紫外線吸収染料が9−アントラセンカルボン酸である請求項1 4記載の組成物。 16. プロトン硬化性酸が鉱酸、スルホン酸、シュウ酸、マレイン酸、ヘキサ ミン酸、フタル酸およびそれらの混合物よりなる群から選択される請求項1記載 の組成物。 17. 硬化性酸触媒が低揮発性p−トルエンスルホン酸である請求項16記載 の組成物。 18. アミノプラスト架橋剤が2.0未満の重合度を有する高アルキル化メラ ミン−ホルムアルデヒド樹脂である請求項1記載の組成物。 19. アルコール含有溶媒系が、アルコールに加えて、エステル、グリム、エ ーテル、環状ケトンおよびそれらの混合物よりなる群から選択される溶媒を含む 請求項1記載の組成物。 20. 溶媒系が70重量%以上の1−メトキシ−2−プロパノールを含有する 請求項19記載の組成物。 21. 溶媒系が少なくとも10:1のアミノプラストの当量メチロール単位に 対するアルコールのモル比をもつ請求項19記載の組成物。 22. 固形分の重量につき約50%ないし90%の染料グラフト化ヒドロキシ ル官能性オリゴマー、約10%ないし50%のアミノプラスト架橋剤、ならびに 約0.1%ないし10%のプロトン酸触媒を含む請求項1記載の組成物。 23. 固形分の重量につき約60%ないし85%の染料グラフト化ヒドロキシ ル官能性オリゴマー、約15%ないし35%のアミノプラスト架橋剤、ならびに 約2%ないし5%のプロトン酸触媒を含む請求項22記載の組成物。 24. a. オリゴマー染料グラフト化バインダーを生成するために、(i) 予め選択されたフェノール−もしくはカルボン酸−官能性染料成分と(ii)2. 0より大きく10未満のエポキシ官能価を有するポリ(エポキシド)樹脂とを、 化学量論量で、ならびにグラフト化触媒および低ないし中沸点溶媒であって少な くとも20%のアルコールを含む溶媒の存在下で熱反応させること;該反応はポ リ(エポキシド)樹脂をポリエーテルまたはポリエステル誘導体に転化させるこ とを特徴とする; b. 活性プロトン酸硬化触媒の存在下でそれとアルキル化アミノプラスト架 橋剤とを混合すること;前記溶媒と前記アミノプラストとは少なくとも4:1で あるアミノプラストの当量メチロール単位に対するアルコールモル比を有し;な らびに上記全配合物は総固形分約3ないし約10重量%を有する; からなる、活性硬化触媒を含むが貯蔵中の重合に対して本質的に安定であるアミ ノプラスト−架橋性ARC組成物の製造方法であって、 これによって、熱的に活性化される触媒もしくは光酸触媒の使用による貯蔵中 の触媒作用を抑制する必要をなくしおよびフォトレジスト混合の危険を冒す必要 なく標的波長における改善された光学濃度が達成される、前記製造方法。 25. 固形分組成が約50%ないし90%のオリゴマー染料グラフト化バイン ダー、約10%ないし50%のアミノプラスト架橋剤、ならびに約0.1%ない し10%のプロトン酸硬化触媒よりなる請求項24記載の方法。 26. 固形分組成が約60%ないし85%のオリゴマー染料グラフト化バイン ダー、約15%ないし35%のアミノプラスト、ならびに約2%ないし5%のプ ロトン酸硬化触媒よりなる請求項25記載の方法。 27. マイクロリソグラフィー法のための多層レジスト構造を製造する方法に あって、改良点が、半導体支持体上に有効なARC層を塗布すること;該ARC はアルコール含有溶媒系に溶解された、ポリ(エポキシド)樹脂から誘導された 染料−グラフト化ヒドロキシル官能性オリゴマー、アミノプラスト架橋剤および 活性硬化触媒とからなる;約120℃ないし220℃で30ないし120秒焼付 けすることならびにフォトレジスト層をオーバーコートすることよりなり; これによって、バインダー中のポリ(エポキシド)分子構造を保持する必要なし に、高溶解度差をもつ高分子量熱可塑性バインダーを含む反射防止性基底層の必 要をなくす前記方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/517,089 | 1995-08-21 | ||
US08/517,089 US5693691A (en) | 1995-08-21 | 1995-08-21 | Thermosetting anti-reflective coatings compositions |
PCT/US1995/016728 WO1997007145A1 (en) | 1995-08-21 | 1995-12-14 | Thermosetting anti-reflective coatings and method for making same |
Publications (2)
Publication Number | Publication Date |
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JPH11511194A true JPH11511194A (ja) | 1999-09-28 |
JP4304250B2 JP4304250B2 (ja) | 2009-07-29 |
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JP50924497A Expired - Lifetime JP4304250B2 (ja) | 1995-08-21 | 1995-12-14 | 熱硬化性反射防止性コーティングおよびその製造方法 |
Country Status (9)
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US (2) | US5693691A (ja) |
EP (1) | EP0858615B1 (ja) |
JP (1) | JP4304250B2 (ja) |
KR (1) | KR100391707B1 (ja) |
AT (1) | ATE195025T1 (ja) |
DE (1) | DE69518171T2 (ja) |
ES (1) | ES2150600T3 (ja) |
TW (1) | TW334465B (ja) |
WO (1) | WO1997007145A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6528235B2 (en) | 1991-11-15 | 2003-03-04 | Shipley Company, L.L.C. | Antihalation compositions |
US6472128B2 (en) | 1996-04-30 | 2002-10-29 | Shipley Company, L.L.C. | Antihalation compositions |
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US6544717B2 (en) | 1999-01-28 | 2003-04-08 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating composition for photolithographic resist |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
US6323287B1 (en) * | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
US6268457B1 (en) | 1999-06-10 | 2001-07-31 | Allied Signal, Inc. | Spin-on glass anti-reflective coatings for photolithography |
EP1190277B1 (en) * | 1999-06-10 | 2009-10-07 | AlliedSignal Inc. | Semiconductor having spin-on-glass anti-reflective coatings for photolithography |
US6187506B1 (en) * | 1999-08-05 | 2001-02-13 | Clariant Finance (Bvi) Limited | Antireflective coating for photoresist compositions |
US20040034134A1 (en) * | 1999-08-26 | 2004-02-19 | Lamb James E. | Crosslinkable fill compositions for uniformly protecting via and contact holes |
KR100912975B1 (ko) * | 2000-03-09 | 2009-08-20 | 브레우어 사이언스 인코포레이션 | 중합 아미노플라스트를 함유하는 개선된 반사 방지액 조성물 |
US6323310B1 (en) | 2000-04-19 | 2001-11-27 | Brewer Science, Inc. | Anti-reflective coating compositions comprising polymerized aminoplasts |
US6653411B2 (en) | 2000-04-19 | 2003-11-25 | Brewer Science, Inc. | Anti-reflective coating compositions comprising polymerized aminoplasts |
KR100687850B1 (ko) * | 2000-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
US6368400B1 (en) | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
US6444320B1 (en) | 2001-01-08 | 2002-09-03 | Brewer Science | Thermosetting anti-reflective coatings for full-fill dual damascene process |
US20020162031A1 (en) * | 2001-03-08 | 2002-10-31 | Shmuel Levin | Method and apparatus for automatic control of access |
TWI225187B (en) * | 2001-04-10 | 2004-12-11 | Nissan Chemical Ind Ltd | Composite for forming anti-reflective film in lithography |
KR101019331B1 (ko) * | 2001-04-17 | 2011-03-07 | 브레우어 사이언스 인코포레이션 | 개선된 스핀 보울 상화성을 갖는 반사 방지 코팅 조성물 |
US6893684B2 (en) * | 2001-06-05 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coating compositions for use with low k dielectric materials |
US6670425B2 (en) * | 2001-06-05 | 2003-12-30 | Brewer Science, Inc. | Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings |
CN100362430C (zh) * | 2001-08-20 | 2008-01-16 | 日产化学工业株式会社 | 形成光刻用防反射膜的组合物 |
TW591341B (en) | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
WO2003034152A1 (fr) * | 2001-10-10 | 2003-04-24 | Nissan Chemical Industries, Ltd. | Composition de formation d'un film antireflet pour lithographie |
US6561640B1 (en) | 2001-10-31 | 2003-05-13 | Xerox Corporation | Systems and methods of printing with ultraviolet photosensitive resin-containing materials using light emitting devices |
US6536889B1 (en) | 2001-10-31 | 2003-03-25 | Xerox Corporation | Systems and methods for ejecting or depositing substances containing multiple photointiators |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
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US8012670B2 (en) * | 2002-04-11 | 2011-09-06 | Rohm And Haas Electronic Materials Llc | Photoresist systems |
JP2003318126A (ja) * | 2002-04-25 | 2003-11-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
DE10227807A1 (de) * | 2002-06-21 | 2004-01-22 | Honeywell Specialty Chemicals Seelze Gmbh | Silylalkylester von Anthracen- und Phenanthrencarbonsäuren |
JP3852593B2 (ja) * | 2002-07-17 | 2006-11-29 | 日産化学工業株式会社 | 反射防止膜形成組成物 |
US7038328B2 (en) * | 2002-10-15 | 2006-05-02 | Brewer Science Inc. | Anti-reflective compositions comprising triazine compounds |
WO2004051740A1 (ja) * | 2002-11-27 | 2004-06-17 | Tokyo Ohka Kogyo Co., Ltd. | 半導体多層配線形成方法 |
AU2003292809A1 (en) * | 2002-12-26 | 2004-07-29 | Nissan Chemical Industries, Ltd. | Alkali-soluble gap filling material forming composition for lithography |
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CN101560323B (zh) * | 2003-04-02 | 2012-07-04 | 日产化学工业株式会社 | 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物 |
US7365023B2 (en) * | 2003-04-17 | 2008-04-29 | Nissan Chemical Industries, Ltd. | Porous underlayer coating and underlayer coating forming composition for forming porous underlayer coating |
JP2004356708A (ja) * | 2003-05-27 | 2004-12-16 | Hosiden Corp | 音響検出機構及びその製造方法 |
JP4105036B2 (ja) * | 2003-05-28 | 2008-06-18 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
US7008476B2 (en) * | 2003-06-11 | 2006-03-07 | Az Electronic Materials Usa Corp. | Modified alginic acid of alginic acid derivatives and thermosetting anti-reflective compositions thereof |
TWI363251B (en) | 2003-07-30 | 2012-05-01 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition for lithography containing compound having protected carboxy group |
TWI360726B (en) * | 2003-10-30 | 2012-03-21 | Nissan Chemical Ind Ltd | Sublayer coating-forming composition containing de |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
EP1703328B1 (en) * | 2003-12-26 | 2010-04-14 | Nissan Chemical Industries, Ltd. | Composition for forming nitride coating film for hard mask |
US7501229B2 (en) * | 2004-03-16 | 2009-03-10 | Nissan Chemical Industries, Ltd. | Anti-reflective coating containing sulfur atom |
WO2005098542A1 (ja) * | 2004-04-09 | 2005-10-20 | Nissan Chemical Industries, Ltd. | 縮合系ポリマーを有する半導体用反射防止膜 |
CN100585496C (zh) * | 2004-10-12 | 2010-01-27 | 日产化学工业株式会社 | 含有硫原子的形成光刻用防反射膜的组合物 |
US7687223B2 (en) * | 2004-11-01 | 2010-03-30 | Nissan Chemical Industries, Ltd. | Underlayer coating forming composition for lithography containing cyclodextrin compound |
KR100643918B1 (ko) * | 2004-12-21 | 2006-11-10 | 매그나칩 반도체 유한회사 | 유기 반사 방지막용 고분자 수지 및 유기 반사 방지막조성물, 및 이를 이용한 패턴 형성 방법 |
KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
WO2006115074A1 (ja) * | 2005-04-19 | 2006-11-02 | Nissan Chemical Industries, Ltd. | エチレンジカルボニル構造を有するポリマーを含むリソグラフィー用反射防止膜形成組成物 |
CN101248391B (zh) * | 2005-08-25 | 2013-03-27 | 日产化学工业株式会社 | 含有乙烯基萘树脂衍生物的形成光刻用涂布型下层膜的组合物 |
US7550249B2 (en) * | 2006-03-10 | 2009-06-23 | Az Electronic Materials Usa Corp. | Base soluble polymers for photoresist compositions |
KR101423057B1 (ko) * | 2006-08-28 | 2014-07-25 | 닛산 가가쿠 고교 가부시키 가이샤 | 액상첨가제를 포함하는 레지스트 하층막 형성 조성물 |
US7759046B2 (en) * | 2006-12-20 | 2010-07-20 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
CN101622297A (zh) * | 2007-02-26 | 2010-01-06 | Az电子材料美国公司 | 制备硅氧烷聚合物的方法 |
US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
KR101523393B1 (ko) | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | 규소를 주성분으로 하는 반사 방지 코팅 조성물 |
US8603731B2 (en) * | 2007-02-27 | 2013-12-10 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition for electron beam lithography |
US20090042133A1 (en) * | 2007-08-10 | 2009-02-12 | Zhong Xiang | Antireflective Coating Composition |
US20090202910A1 (en) | 2008-02-08 | 2009-08-13 | Anglin David L | Alkaline Batteries |
US7951354B2 (en) * | 2008-04-02 | 2011-05-31 | The Gillette Company | Ozonating manganese dioxide |
US20090258297A1 (en) * | 2008-04-15 | 2009-10-15 | Davis Stuart M | Battery |
US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8329387B2 (en) | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US8084193B2 (en) * | 2008-07-12 | 2011-12-27 | International Business Machines Corporation | Self-segregating multilayer imaging stack with built-in antireflective properties |
US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
US20100248012A1 (en) | 2009-03-27 | 2010-09-30 | Alexander Boris Shelekhin | Alkaline Batteries |
US20120040291A1 (en) | 2009-04-21 | 2012-02-16 | Nissan Chemical Industries, Ltd. | Composition for forming resist underlayer film for euv lithography |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
US20110039148A1 (en) | 2009-08-14 | 2011-02-17 | Yichun Wang | Alkaline primary cells |
US20110039149A1 (en) | 2009-08-14 | 2011-02-17 | Yichun Wang | Alkaline primary cells |
US20110039150A1 (en) | 2009-08-14 | 2011-02-17 | Yichun Wang | Alkaline primary cells |
US8507192B2 (en) * | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
JP5741340B2 (ja) | 2010-09-29 | 2015-07-01 | Jsr株式会社 | レジスト下層膜形成用組成物、重合体、レジスト下層膜、パターン形成方法及び半導体装置の製造方法 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
US8920969B2 (en) | 2012-12-05 | 2014-12-30 | The Gillette Company | Alkaline electrochemical cells with separator and electrolyte combination |
US20140295229A1 (en) | 2013-03-29 | 2014-10-02 | The Gillette Company | End cap assembly for an electrochemical cell |
US9590233B2 (en) | 2013-04-05 | 2017-03-07 | Duracell U.S. Operations, Inc. | Method of making a cathode |
US9543623B2 (en) | 2013-12-11 | 2017-01-10 | Duracell U.S. Operations, Inc. | Battery condition indicator |
WO2016160659A1 (en) | 2015-03-30 | 2016-10-06 | Duracell U.S. Operations, Inc. | Battery including beta-delithiated layered nickel oxide electrochemically active cathode material |
US9793542B2 (en) | 2014-03-28 | 2017-10-17 | Duracell U.S. Operations, Inc. | Beta-delithiated layered nickel oxide electrochemically active cathode material and a battery including said material |
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Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4521951B1 (ja) * | 1965-02-19 | 1970-07-24 | ||
JPS59197419A (ja) * | 1983-04-13 | 1984-11-09 | デソト,インコ−ポレ−テツド | エポキシエステル類の製造方法 |
JPS61180241A (ja) * | 1985-02-06 | 1986-08-12 | Hitachi Ltd | パタ−ン形成方法 |
JPS63170472A (ja) * | 1987-01-08 | 1988-07-14 | Nippon Steel Corp | 下塗り用塗料組成物 |
JPH0483257A (ja) * | 1990-07-26 | 1992-03-17 | Fuji Xerox Co Ltd | 電子写真感光体 |
JPH04153290A (ja) * | 1990-10-18 | 1992-05-26 | Nippon Kagaku Kogyosho:Kk | 光線遮蔽剤 |
JPH04296594A (ja) * | 1991-03-26 | 1992-10-20 | Fuji Photo Film Co Ltd | 感熱記録材料を用いた画像形成方法 |
JPH05202228A (ja) * | 1991-07-16 | 1993-08-10 | Tosoh Corp | 平坦化材料及び平坦化方法 |
JPH05247323A (ja) * | 1991-08-28 | 1993-09-24 | Hoechst Ag | エポキシ樹脂水性分散物の製造方法 |
JPH0627649A (ja) * | 1992-07-06 | 1994-02-04 | Oji Kako Kk | 感光性樹脂組成物 |
JPH0627673A (ja) * | 1992-03-24 | 1994-02-04 | Toshiba Corp | パターン形成方法 |
JPH0675378A (ja) * | 1992-07-24 | 1994-03-18 | Internatl Business Mach Corp <Ibm> | 反射防止コーティング組成物及びその製造方法 |
JPH06102673A (ja) * | 1992-09-22 | 1994-04-15 | Fujitsu Ltd | 反射防止膜用材料及び反射防止膜形成方法 |
JPH06110199A (ja) * | 1992-08-14 | 1994-04-22 | Japan Synthetic Rubber Co Ltd | 反射防止膜およびレジストパターンの形成方法 |
JPH06118656A (ja) * | 1992-10-05 | 1994-04-28 | Japan Synthetic Rubber Co Ltd | 反射防止膜およびレジストパターンの形成方法 |
JPH06266101A (ja) * | 1993-03-12 | 1994-09-22 | Japan Synthetic Rubber Co Ltd | ドライ現像用ポジ型レジスト組成物 |
US5366846A (en) * | 1992-04-02 | 1994-11-22 | Shipley Company Inc. | Photoimageable compositions comprising polybutadiene having internal epoxide groups |
JPH0782221A (ja) * | 1993-07-20 | 1995-03-28 | Wako Pure Chem Ind Ltd | 新規なアントラセン誘導体 |
JPH0943839A (ja) * | 1995-05-25 | 1997-02-14 | Japan Synthetic Rubber Co Ltd | 反射防止膜形成用組成物 |
JPH1048833A (ja) * | 1996-08-07 | 1998-02-20 | Fuji Photo Film Co Ltd | 反射防止膜材料用組成物 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624013A (en) * | 1967-02-10 | 1971-11-30 | Desoto Inc | Heat-hardenable water-dispersible resins derived from polyhydric polyethers and mixtures thereof with benzoguanamine-formaldehyde condensates particularly adapted for electrodeposition |
CH576739A5 (ja) * | 1972-08-25 | 1976-06-15 | Ciba Geigy Ag | |
US4316940A (en) * | 1980-03-21 | 1982-02-23 | E. I. Du Pont De Nemours And Company | High-solids polyester and aminoplast coating composition |
US4544691A (en) * | 1981-11-05 | 1985-10-01 | Ciba-Geigy Corporation | Compositions containing ultraviolet-absorbing stabilizing substituted by an aliphatic hydroxyl group |
DE3371573D1 (en) * | 1982-11-25 | 1987-06-19 | Ciba Geigy Ag | Light-sensitive and possibly cross-linkable mixture of compounds apt to condensation and addition reactions, reaction products obtained thereby and use thereof |
US4508724A (en) * | 1984-02-03 | 1985-04-02 | A. H. Robins Company, Inc. | Aryloxymethylpyrrolidinols and piperidinols having antidepressant, antiarrhythmic or hypotensive activity |
JP2694097B2 (ja) * | 1992-03-03 | 1997-12-24 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 反射防止コーティング組成物 |
US5576359A (en) * | 1993-07-20 | 1996-11-19 | Wako Pure Chemical Industries, Ltd. | Deep ultraviolet absorbent composition |
-
1995
- 1995-08-21 US US08/517,089 patent/US5693691A/en not_active Expired - Lifetime
- 1995-12-14 AT AT95944193T patent/ATE195025T1/de not_active IP Right Cessation
- 1995-12-14 ES ES95944193T patent/ES2150600T3/es not_active Expired - Lifetime
- 1995-12-14 WO PCT/US1995/016728 patent/WO1997007145A1/en active IP Right Grant
- 1995-12-14 EP EP95944193A patent/EP0858615B1/en not_active Expired - Lifetime
- 1995-12-14 DE DE69518171T patent/DE69518171T2/de not_active Expired - Lifetime
- 1995-12-14 JP JP50924497A patent/JP4304250B2/ja not_active Expired - Lifetime
- 1995-12-14 KR KR10-1998-0701277A patent/KR100391707B1/ko not_active IP Right Cessation
-
1996
- 1996-01-04 TW TW085100029A patent/TW334465B/zh not_active IP Right Cessation
- 1996-08-06 US US08/692,714 patent/US5919598A/en not_active Expired - Lifetime
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4521951B1 (ja) * | 1965-02-19 | 1970-07-24 | ||
JPS59197419A (ja) * | 1983-04-13 | 1984-11-09 | デソト,インコ−ポレ−テツド | エポキシエステル類の製造方法 |
JPS61180241A (ja) * | 1985-02-06 | 1986-08-12 | Hitachi Ltd | パタ−ン形成方法 |
JPS63170472A (ja) * | 1987-01-08 | 1988-07-14 | Nippon Steel Corp | 下塗り用塗料組成物 |
JPH0483257A (ja) * | 1990-07-26 | 1992-03-17 | Fuji Xerox Co Ltd | 電子写真感光体 |
JPH04153290A (ja) * | 1990-10-18 | 1992-05-26 | Nippon Kagaku Kogyosho:Kk | 光線遮蔽剤 |
JPH04296594A (ja) * | 1991-03-26 | 1992-10-20 | Fuji Photo Film Co Ltd | 感熱記録材料を用いた画像形成方法 |
JPH05202228A (ja) * | 1991-07-16 | 1993-08-10 | Tosoh Corp | 平坦化材料及び平坦化方法 |
JPH05247323A (ja) * | 1991-08-28 | 1993-09-24 | Hoechst Ag | エポキシ樹脂水性分散物の製造方法 |
JPH0627673A (ja) * | 1992-03-24 | 1994-02-04 | Toshiba Corp | パターン形成方法 |
US5366846A (en) * | 1992-04-02 | 1994-11-22 | Shipley Company Inc. | Photoimageable compositions comprising polybutadiene having internal epoxide groups |
JPH0627649A (ja) * | 1992-07-06 | 1994-02-04 | Oji Kako Kk | 感光性樹脂組成物 |
JPH0675378A (ja) * | 1992-07-24 | 1994-03-18 | Internatl Business Mach Corp <Ibm> | 反射防止コーティング組成物及びその製造方法 |
JPH06110199A (ja) * | 1992-08-14 | 1994-04-22 | Japan Synthetic Rubber Co Ltd | 反射防止膜およびレジストパターンの形成方法 |
JPH06102673A (ja) * | 1992-09-22 | 1994-04-15 | Fujitsu Ltd | 反射防止膜用材料及び反射防止膜形成方法 |
JPH06118656A (ja) * | 1992-10-05 | 1994-04-28 | Japan Synthetic Rubber Co Ltd | 反射防止膜およびレジストパターンの形成方法 |
JPH06266101A (ja) * | 1993-03-12 | 1994-09-22 | Japan Synthetic Rubber Co Ltd | ドライ現像用ポジ型レジスト組成物 |
JPH0782221A (ja) * | 1993-07-20 | 1995-03-28 | Wako Pure Chem Ind Ltd | 新規なアントラセン誘導体 |
JPH0943839A (ja) * | 1995-05-25 | 1997-02-14 | Japan Synthetic Rubber Co Ltd | 反射防止膜形成用組成物 |
JPH1048833A (ja) * | 1996-08-07 | 1998-02-20 | Fuji Photo Film Co Ltd | 反射防止膜材料用組成物 |
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JP2003515793A (ja) * | 1999-11-30 | 2003-05-07 | ブルーワー サイエンス アイ エヌ シー. | 反射防止ポリマーコーティングに使用する非芳香族発色団 |
JP2005517972A (ja) * | 2002-01-09 | 2005-06-16 | クラリアント・インターナシヨナル・リミテッド | ポジ型光像形成性底面反射防止膜 |
US7309560B2 (en) | 2002-02-19 | 2007-12-18 | Nissan Chemical Industries, Ltd. | Composition for forming anti-reflective coating |
JP2006502448A (ja) * | 2002-10-08 | 2006-01-19 | ブルーワー サイエンス アイ エヌ シー. | 多数のエポキシ残基を有しており中心部が小さい分子から得られるフォトレジスト底面の反射防止膜 |
KR101027606B1 (ko) * | 2002-10-08 | 2011-04-06 | 브레우어 사이언스 인코포레이션 | 다수의 에폭시 부분을 가진 소 코어 분자로부터 유도된바닥 반사 방지 코팅제 |
US7425399B2 (en) | 2002-10-09 | 2008-09-16 | Nissan Chemical Industries, Ltd. | Composition for forming anti-reflective coating for use in lithography |
WO2006132088A1 (ja) * | 2005-06-10 | 2006-12-14 | Nissan Chemical Industries, Ltd. | ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物 |
US7816067B2 (en) | 2005-06-10 | 2010-10-19 | Nissan Chemical Industries, Ltd. | Coating-type underlayer coating forming composition for lithography containing naphthalene resin derivative |
WO2015030004A1 (ja) * | 2013-08-29 | 2015-03-05 | 日産化学工業株式会社 | 硬化膜形成組成物、配向材および位相差材 |
JPWO2015030004A1 (ja) * | 2013-08-29 | 2017-03-02 | 日産化学工業株式会社 | 硬化膜形成組成物、配向材および位相差材 |
WO2016039337A1 (ja) * | 2014-09-08 | 2016-03-17 | 日産化学工業株式会社 | 硬化膜形成組成物、配向材および位相差材 |
KR20170049533A (ko) * | 2014-09-08 | 2017-05-10 | 닛산 가가쿠 고교 가부시키 가이샤 | 경화막 형성 조성물, 배향재 및 위상차재 |
CN106796373A (zh) * | 2014-09-08 | 2017-05-31 | 日产化学工业株式会社 | 固化膜形成用组合物、取向材及相位差材 |
JPWO2016039337A1 (ja) * | 2014-09-08 | 2017-06-22 | 日産化学工業株式会社 | 硬化膜形成組成物、配向材および位相差材 |
CN110325886A (zh) * | 2017-02-22 | 2019-10-11 | 日产化学株式会社 | 固化膜形成用组合物、取向材及相位差材 |
KR20220024080A (ko) | 2019-06-17 | 2022-03-03 | 닛산 가가쿠 가부시키가이샤 | 디시아노스티릴기를 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물 |
KR20220024079A (ko) | 2019-06-17 | 2022-03-03 | 닛산 가가쿠 가부시키가이샤 | 디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물 |
US11977331B2 (en) | 2019-06-17 | 2024-05-07 | Nissan Chemical Corporation | Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched |
Also Published As
Publication number | Publication date |
---|---|
US5919598A (en) | 1999-07-06 |
KR19990044045A (ko) | 1999-06-25 |
EP0858615A4 (en) | 1998-10-14 |
DE69518171T2 (de) | 2001-03-15 |
EP0858615A1 (en) | 1998-08-19 |
EP0858615B1 (en) | 2000-07-26 |
WO1997007145A1 (en) | 1997-02-27 |
TW334465B (en) | 1998-06-21 |
ES2150600T3 (es) | 2000-12-01 |
JP4304250B2 (ja) | 2009-07-29 |
KR100391707B1 (ko) | 2004-06-12 |
DE69518171D1 (de) | 2000-08-31 |
US5693691A (en) | 1997-12-02 |
ATE195025T1 (de) | 2000-08-15 |
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