JPH04111800A - Cutting work process of transparent material - Google Patents
Cutting work process of transparent materialInfo
- Publication number
- JPH04111800A JPH04111800A JP2229891A JP22989190A JPH04111800A JP H04111800 A JPH04111800 A JP H04111800A JP 2229891 A JP2229891 A JP 2229891A JP 22989190 A JP22989190 A JP 22989190A JP H04111800 A JPH04111800 A JP H04111800A
- Authority
- JP
- Japan
- Prior art keywords
- transparent material
- energy beam
- energy
- high energy
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012780 transparent material Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- 241000219122 Cucurbita Species 0.000 description 1
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は、石英ガラスなどの種々の透明材料を切断加工
する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cutting various transparent materials such as quartz glass.
[従来の技術]
従来、石英ガラスなどの種々の透明材料を切断加工する
方法として、バンドソーや内周刃などの直線的な切断機
や、コアドリル、円筒研削機などの円形の加工機械が使
用され直線状または、円筒状の加工がおこなわれている
。[Prior Art] Traditionally, linear cutting machines such as band saws and internal blades, and circular processing machines such as core drills and cylindrical grinders have been used to cut various transparent materials such as quartz glass. Linear or cylindrical processing is performed.
また、不定形の切断加工には炭酸ガスレーザを使用した
レーザ加工機等が使用されている。Furthermore, a laser processing machine using a carbon dioxide laser is used for cutting into irregular shapes.
[発明が解決しようとする課題]
従来の切断加工機械のバンドソーや、内周刃などでは直
線的な切断加工のみであり、また、コアドリル、円筒研
削機などの円形の加工機械は、円筒形の切断のみであり
、複雑な加工には使用できなかった。炭酸ガスレーザを
利用したレーザ切断機では、炭酸ガスレーザビームの波
長はガラスを透過しないため、材料表面部に集光し表面
より溶断して行くが、この場合溶断表面より内部へ進行
するに従って、溶断面のピットによりレーザビームがさ
えぎられるので、溶断する厚さに対し限度があり、現状
ではLoan程度が限界である。[Problems to be solved by the invention] Conventional cutting machines such as band saws and internal blades only cut in straight lines, and circular cutting machines such as core drills and cylindrical grinding machines only cut in cylindrical shapes. It could only be used for cutting and could not be used for complex machining. In a laser cutting machine that uses a carbon dioxide laser, the wavelength of the carbon dioxide laser beam does not pass through glass, so it is focused on the surface of the material and melts from the surface. Since the laser beam is blocked by the pits, there is a limit to the thickness that can be cut by fusing, and currently the limit is around Loan.
本発明は、石英ガラスなどの透明材料を複雑な形状に切
断加工することを目的とし、被加工物の厚味に影響を受
けず、厚板であっても自由な切断加工を可能とすること
を目的としている。The purpose of the present invention is to cut transparent materials such as quartz glass into complex shapes, and to enable free cutting even on thick plates without being affected by the thickness of the workpiece. It is an object.
[課題を解決するための手段]
そこで、本発明は、石英ガラスなどの透明材料に吸収さ
れない高エネルギービームを透明材料内部に焦点を結ば
せて照射し、透明材料内部に微小なりラックを発生させ
ることによって透明材料を切断加工しようとするもので
ある。[Means for Solving the Problem] Therefore, the present invention focuses and irradiates the inside of the transparent material with a high-energy beam that is not absorbed by the transparent material such as quartz glass, thereby generating a minute rack inside the transparent material. This method attempts to cut transparent materials.
透明材料としては、例えば、光学ガラス、石英ガラスな
どの無機ガラス、アクリル樹脂などの透明榎脂等が挙げ
られる。Examples of the transparent material include optical glass, inorganic glass such as quartz glass, transparent resin such as acrylic resin, and the like.
高エネルギービームとしては、XeF(351nm)、
XeC1(308nm)、KrF (248nm)、A
rF (193nm)等のエキシマレーザ−や、YAG
レーザ及びその高調波等が挙げられる。As a high energy beam, XeF (351 nm),
XeC1 (308nm), KrF (248nm), A
Excimer laser such as rF (193nm), YAG
Examples include lasers and their harmonics.
透明材料の高エネルギービームに対する吸収特性に応じ
て、適切な高エネルギービームを選択する必要がある。It is necessary to select an appropriate high-energy beam depending on the absorption characteristics of the transparent material for the high-energy beam.
高エネルギービームは、100 Hz以上の高くりかえ
し周波数の方が効率的である。High energy beams are more efficient at high repetition frequencies of 100 Hz or higher.
焦点の移動は、光学的に焦点位置を移動させても、また
、ワークを移動させても良く、操作しやすい方法を適宜
選択できる。The focus may be moved by optically moving the focus position or by moving the workpiece, and any method that is easy to operate can be selected as appropriate.
焦点は、最初ワークの下側にあわせ、それから上方に移
動させるのが効率的である。最初に、ワークの上方に焦
点を合せると、切断部分により高エネルギービームが部
分的に切断されてしまい作業効率が悪くなるからである
。It is efficient to first focus on the underside of the workpiece and then move it upward. First, if the beam is focused above the workpiece, the high-energy beam will be partially cut off by the cutting portion, resulting in poor work efficiency.
高エネルギービームが通過する表面は研磨しておき、ビ
ームが表面で散乱するのを防止し、焦点位置にビームが
集中するようにするのが好ましい。Preferably, the surface through which the high-energy beam passes is polished to prevent the beam from scattering on the surface and to concentrate the beam at a focal point.
[作用]
透明材料に吸収されない高エネルギービームを、レンズ
やミラーから構成される光学系を介して透明材料の内部
に焦点を合せ、高エネルギービームを透明材料内部に照
射する。すると、高エネルギービームの照射された個所
に数十ミクロン以下の微小なりラックが発生する。高エ
ネルギービームの照射位置を移動させて、透明材料に連
続的なりラックを発生させることによって透明材料を切
断加工する。[Operation] A high-energy beam that is not absorbed by the transparent material is focused inside the transparent material through an optical system composed of lenses and mirrors, and the high-energy beam is irradiated inside the transparent material. Then, a microscopic rack of several tens of microns or less is generated at the location irradiated with the high-energy beam. The transparent material is cut by moving the irradiation position of the high-energy beam to generate a continuous rack on the transparent material.
クラックの発生について更に詳しく説明する。The occurrence of cracks will be explained in more detail.
固体中では、荷電子のエネルギー準位は帯状のいわゆる
バンド構造をとっている。絶縁体ではバンドギャップ以
下のフォトンエネルギーのフォトン、すなわち、長波長
の光は吸収しない。In a solid, the energy level of valence electrons has a so-called band structure. Insulators do not absorb photons with photon energy below the band gap, that is, long wavelength light.
しかし、バンドギャップよりも低エネルギーの光でも、
レンズで集光するなどしてフォトン密度を極端に高くす
ると、2個あるいは、それ以上のフォトンを同時に吸収
することにより、電子が充満帯(エネルギーギャップよ
りエネルギーの低いエネルギーバンド)から伝導帯(エ
ネルギーギャップよりエネルギーが高く、通常の状態で
は電子の存在しないエネルギーバンド)に励起される。However, even light with energy lower than the band gap
When the photon density is extremely high, such as by concentrating light with a lens, two or more photons are absorbed simultaneously, causing electrons to move from the charge band (energy band lower in energy than the energy gap) to the conduction band (energy band). It has a higher energy than the gap and is excited to an energy band (an energy band in which no electrons exist under normal conditions).
このように、フォトンを同時に2個吸収することを2光
子吸収、さらに一般に複数個吸収することを多光子吸収
という。The simultaneous absorption of two photons in this way is called two-photon absorption, and the absorption of a plurality of photons is called multiphoton absorption.
この発明においては、多光子吸収を利用して、バンドギ
ャップよりエネルギーが低く、本来、吸収の起こらない
波長の光を透明材料に吸収させることにより、透明材料
の結合ボンドを切断したり、あるいは、発熱を利用して
微小なりラックを透明材料内部に発生させるのである。In this invention, multiphoton absorption is used to cause the transparent material to absorb light at a wavelength that is lower in energy than the band gap and at which no absorption would normally occur, thereby cutting the bond of the transparent material, or Using heat generation, microscopic racks are generated inside the transparent material.
石英ガラスでは、このバンドギャップは約9eV(14
0nm)である。石英ガラス中に不純物や欠陥構造が無
い限り、バンドギャップよりも低エネルギー、すなわち
、長波長の光は、通常吸収しない。In silica glass, this bandgap is approximately 9 eV (14
0 nm). Unless there are impurities or defective structures in quartz glass, light with energy lower than the bandgap, that is, with a longer wavelength, is usually not absorbed.
ここでエキシマレーザの波長とフォトンエネルギーを以
下に示す。Here, the wavelength and photon energy of the excimer laser are shown below.
ArF 193 6.4
2KrF 248 5.
0 2XeC13084,03
XeF 351 3.5
3したがって、エキシマレーザはすへて波長が
140nmより長いので、通常は吸収が起きないはずで
ある。しかし、前記の、多光子吸収によって吸収が起こ
り、このため結合ボンドの開裂あるいは発熱作用を生じ
微細なりラックが内部に発生するのである。ArF 193 6.4
2KrF 248 5.
0 2XeC13084,03 XeF 351 3.5
3. Therefore, since excimer lasers always have wavelengths longer than 140 nm, absorption should not normally occur. However, absorption occurs due to multi-photon absorption as described above, which causes cleavage of the bond or heat generation, and generates minute racks inside.
荷電子を充満帯から伝導帯に励起するのに必要なフォト
ン数は1石英ガラスのバンドギャップ9evを超えるた
めに必要な個数である。The number of photons required to excite valence electrons from the charge band to the conduction band is the number required to exceed the band gap of 1 quartz glass, 9 ev.
[実施例] 次に、本発明を実施例によってさらに詳しく説明する。[Example] Next, the present invention will be explained in more detail by way of examples.
実施例1
透明材料として150X150X150mmの合成石英
ガラス(OH1300ppm含有)を使用し、高エネル
ギービームとしては、不安定共振器を用いたエキシマレ
ーザ(K r F 248 n mエネルギー密度
50 m J / cJ・パルス、くり返し周波数 1
50Hz)を使用し、焦点距離500 m mのレンズ
で集光し、ミラーで反射させ、上面を予め研磨したワー
クである厚板の合成石灰ガラスの内部にエキシマレーザ
ビームの焦点を合せエキシマレーザをワークの上面から
照射し、ワークを3 r、p、mの回転数で回転させ
ながら、焦点の位置を3mm/minの速さでワーク底
面より引き上げることにより、直径30mmの円筒形の
孔を開けた。Example 1 Synthetic quartz glass (containing 1300 ppm OH) of 150 x 150 x 150 mm was used as the transparent material, and an excimer laser (K r F 248 nm energy density) using an unstable resonator was used as the high energy beam.
50 mJ/cJ pulse, repetition frequency 1
50Hz), the excimer laser beam is focused by a lens with a focal length of 500 mm, reflected by a mirror, and focused inside a thick synthetic lime glass workpiece whose top surface has been polished in advance. A cylindrical hole with a diameter of 30 mm is made by irradiating from the top of the workpiece and lifting the focal point from the bottom of the workpiece at a speed of 3 mm/min while rotating the workpiece at a rotation speed of 3 r, p, m. Ta.
このとき、ワーク内部におけるエキシマレーザのビーム
の垂直方向の焦点位置は、レンズの位置を移動させるこ
とによって変化させた。At this time, the vertical focus position of the excimer laser beam inside the workpiece was changed by moving the position of the lens.
また、ワーク内部での焦点位置の水平方向の移動は、ワ
ーク自体を水平方向に移動させることによっておこなっ
た。Further, the horizontal movement of the focus position inside the workpiece was performed by moving the workpiece itself in the horizontal direction.
切断に当っては、焦点位置は、ワークの底面から上方向
に移動させた。During cutting, the focal point was moved upward from the bottom of the workpiece.
[効果]
以上、述べてきたように、透明材料の内部に焦点をあわ
せ、透明材料に対し吸収の無い高エネルギービーム、例
えば、石英ガラスに対しエキシマレーザを照射すると、
微細なりラックが透明材料の内部に発生する。これを連
続させることによって透明材料を複雑な形状に切断加工
できる。[Effect] As mentioned above, when a high-energy beam that does not absorb into the transparent material is focused on the inside of the transparent material, for example, quartz glass is irradiated with an excimer laser,
Fine racks are generated inside the transparent material. By making this continuous, transparent material can be cut into complex shapes.
焦点をワークの内部に結ばせているのでワークの厚味に
影響を受けず、自由な形状に加工できる。Since the focus is placed inside the workpiece, it is not affected by the thickness of the workpiece and can be processed into any shape.
焦点の移動をコンピュタにプログラムしておくことによ
って、円錐形、ひようたん型など、その形状は制約を受
けないといってよいものである。By programming the movement of the focal point into a computer, there are no restrictions on its shape, such as a cone or a gourd shape.
第1図は本発明の概念図である。 オI図 特許出願人 日本石英硝子株式会社 山口日本石英株式会社 FIG. 1 is a conceptual diagram of the present invention. O I diagram Patent applicant: Nippon Quartz Glass Co., Ltd. Yamaguchi Nippon Quartz Co., Ltd.
Claims (4)
明材料内部に焦点を結ばせて照射することを特徴とする
透明材料の切断加工方法。(1) A method for cutting a transparent material, which comprises irradiating the inside of the transparent material with a high-energy beam that is not absorbed by the transparent material.
に高エネルギービームの焦点を合せ、次に、上方に焦点
を移動させる透明材料の切断加工方法。(2) A method for cutting a transparent material according to claim 1, in which a high-energy beam is focused on the lower side of the transparent material, and then the focus is moved upward.
おいて、透明材料は石英ガラスである透明材料の切断加
工方法。(3) A method for cutting a transparent material according to any one of claims 1 to 2, wherein the transparent material is quartz glass.
おいて、高エネルギービームはエキシマレーザである透
明材料の切断加工方法。(4) The method for cutting a transparent material according to any one of claims 1 to 3, wherein the high-energy beam is an excimer laser.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02229891A JP3024990B2 (en) | 1990-08-31 | 1990-08-31 | Cutting method of quartz glass material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02229891A JP3024990B2 (en) | 1990-08-31 | 1990-08-31 | Cutting method of quartz glass material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04111800A true JPH04111800A (en) | 1992-04-13 |
JP3024990B2 JP3024990B2 (en) | 2000-03-27 |
Family
ID=16899342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP02229891A Expired - Fee Related JP3024990B2 (en) | 1990-08-31 | 1990-08-31 | Cutting method of quartz glass material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3024990B2 (en) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1171124A (en) * | 1997-07-07 | 1999-03-16 | Schott Ruhrglas Gmbh | Production of breaking point in glass article |
WO2002022301A1 (en) | 2000-09-13 | 2002-03-21 | Hamamatsu Photonics K.K. | Laser beam machining method and laser beam machining device |
JP2002192370A (en) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | Laser beam machining method |
JP2002205181A (en) * | 2000-09-13 | 2002-07-23 | Hamamatsu Photonics Kk | Device and method for laser beam machining |
JP2003001457A (en) * | 2000-09-13 | 2003-01-08 | Hamamatsu Photonics Kk | Laser beam machining method |
JP2003010985A (en) * | 2001-06-29 | 2003-01-15 | Toppan Forms Co Ltd | True mark integrated member by laser beam machining |
JP2003025080A (en) * | 2000-09-13 | 2003-01-28 | Hamamatsu Photonics Kk | Laser beam machining method |
WO2003076120A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Laser processing method |
WO2003077295A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
WO2003076118A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method |
JP2003338652A (en) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method for semiconductor laser element and semiconductor laser element |
JP2005288501A (en) * | 2004-03-31 | 2005-10-20 | Hokkaido Univ | Laser beam machining method and apparatus |
JP2005313237A (en) * | 2000-09-13 | 2005-11-10 | Hamamatsu Photonics Kk | Laser beam machining method and laser beam machining device |
WO2005107999A1 (en) * | 2004-05-11 | 2005-11-17 | Top Engineering Co., Ltd | Device and method for cutting nonmetalic substrate |
JP2007083309A (en) * | 2002-03-12 | 2007-04-05 | Hamamatsu Photonics Kk | Laser beam machining method |
KR100825884B1 (en) * | 2005-11-16 | 2008-04-28 | 가부시키가이샤 덴소 | Laser processing apparatus and laser processing method |
JP2008201143A (en) * | 2008-06-02 | 2008-09-04 | Denso Corp | Cutting process of work |
JP2009188433A (en) * | 2009-05-28 | 2009-08-20 | Mitsubishi Chemicals Corp | Manufacturing method of nitride semiconductor element |
US7605344B2 (en) | 2003-07-18 | 2009-10-20 | Hamamatsu Photonics K.K. | Laser beam machining method, laser beam machining apparatus, and laser beam machining product |
US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
WO2014121261A1 (en) * | 2013-02-04 | 2014-08-07 | Newport Corporation | Method and apparatus for laser cutting transparent and semitransparent substrates |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
US9511449B2 (en) | 2004-01-09 | 2016-12-06 | Hamamatsu Photonics K.K. | Laser processing method and device |
KR102612497B1 (en) * | 2023-08-10 | 2023-12-11 | 김은수 | Quartz cylinder cutting device and system |
-
1990
- 1990-08-31 JP JP02229891A patent/JP3024990B2/en not_active Expired - Fee Related
Cited By (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1171124A (en) * | 1997-07-07 | 1999-03-16 | Schott Ruhrglas Gmbh | Production of breaking point in glass article |
WO2002022301A1 (en) | 2000-09-13 | 2002-03-21 | Hamamatsu Photonics K.K. | Laser beam machining method and laser beam machining device |
JP2002192370A (en) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | Laser beam machining method |
JP2002205181A (en) * | 2000-09-13 | 2002-07-23 | Hamamatsu Photonics Kk | Device and method for laser beam machining |
JP2003001457A (en) * | 2000-09-13 | 2003-01-08 | Hamamatsu Photonics Kk | Laser beam machining method |
JP2003025080A (en) * | 2000-09-13 | 2003-01-28 | Hamamatsu Photonics Kk | Laser beam machining method |
EP1338371A1 (en) * | 2000-09-13 | 2003-08-27 | Hamamatsu Photonics K. K. | Laser beam machining method and laser beam machining device |
US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
CN111633349A (en) * | 2000-09-13 | 2020-09-08 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
KR101881549B1 (en) * | 2000-09-13 | 2018-07-25 | 하마마츠 포토닉스 가부시키가이샤 | Cutting method, cutting method for workpiece, and cutting method for optically transparent material |
KR20180042462A (en) * | 2000-09-13 | 2018-04-25 | 하마마츠 포토닉스 가부시키가이샤 | Laser processing apparatus and laser processing method |
KR20180031079A (en) * | 2000-09-13 | 2018-03-27 | 하마마츠 포토닉스 가부시키가이샤 | Cutting method, cutting method for workpiece, and cutting method for optically transparent material |
US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
CN106825940A (en) * | 2000-09-13 | 2017-06-13 | 浜松光子学株式会社 | Laser processing and laser processing device |
CN103537796B (en) * | 2000-09-13 | 2016-03-02 | 浜松光子学株式会社 | Laser processing and laser processing device |
KR20160014773A (en) * | 2000-09-13 | 2016-02-11 | 하마마츠 포토닉스 가부시키가이샤 | Cutting method, cutting method for workpiece, and cutting method for optically transparent material |
JP2005313237A (en) * | 2000-09-13 | 2005-11-10 | Hamamatsu Photonics Kk | Laser beam machining method and laser beam machining device |
CN103551737B (en) * | 2000-09-13 | 2016-01-27 | 浜松光子学株式会社 | Laser processing and laser processing device |
US6992026B2 (en) | 2000-09-13 | 2006-01-31 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
CN103537809B (en) * | 2000-09-13 | 2016-01-20 | 浜松光子学株式会社 | Laser processing and laser processing device |
CN105108348A (en) * | 2000-09-13 | 2015-12-02 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
CN103612338B (en) * | 2000-09-13 | 2015-07-15 | 浜松光子学株式会社 | Machining method |
KR20150065917A (en) * | 2000-09-13 | 2015-06-15 | 하마마츠 포토닉스 가부시키가이샤 | Cutting method, cutting method for workpiece, and cutting method for optically transparent material |
US8969761B2 (en) | 2000-09-13 | 2015-03-03 | Hamamatsu Photonics K.K. | Method of cutting a wafer-like object and semiconductor chip |
US7396742B2 (en) | 2000-09-13 | 2008-07-08 | Hamamatsu Photonics K.K. | Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object |
EP1338371A4 (en) * | 2000-09-13 | 2008-08-06 | Hamamatsu Photonics Kk | Laser beam machining method and laser beam machining device |
US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8933369B2 (en) | 2000-09-13 | 2015-01-13 | Hamamatsu Photonics K.K. | Method of cutting a substrate and method of manufacturing a semiconductor device |
JP2009214182A (en) * | 2000-09-13 | 2009-09-24 | Hamamatsu Photonics Kk | Cutting method of workpiece |
US8927900B2 (en) | 2000-09-13 | 2015-01-06 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device |
JP2009241154A (en) * | 2000-09-13 | 2009-10-22 | Hamamatsu Photonics Kk | Cutting method of workpiece |
US7615721B2 (en) | 2000-09-13 | 2009-11-10 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
KR20140142372A (en) * | 2000-09-13 | 2014-12-11 | 하마마츠 포토닉스 가부시키가이샤 | Cutting method, cutting method for workpiece, and cutting method for optically transparent material |
CN101670485A (en) * | 2000-09-13 | 2010-03-17 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
CN101670493A (en) * | 2000-09-13 | 2010-03-17 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
CN103612338A (en) * | 2000-09-13 | 2014-03-05 | 浜松光子学株式会社 | Machining method |
CN103551745A (en) * | 2000-09-13 | 2014-02-05 | 浜松光子学株式会社 | Laser beam machining method |
CN103551747A (en) * | 2000-09-13 | 2014-02-05 | 浜松光子学株式会社 | Laser beam machining method and laser beam machining device |
EP2213403A1 (en) * | 2000-09-13 | 2010-08-04 | Hamamatsu Photonics K.K. | Laser processing apparatus with controller for precisely positioning the focus point in the object to be processed |
CN103551738A (en) * | 2000-09-13 | 2014-02-05 | 浜松光子学株式会社 | Laser beam machining method and laser beam machining device |
EP2228166A1 (en) * | 2000-09-13 | 2010-09-15 | Hamamatsu Photonics K. K. | Method of cutting a substrate with localisation of laser modified region near the surface(s) of the substrate |
EP2228164A1 (en) * | 2000-09-13 | 2010-09-15 | Hamamatsu Photonics K. K. | Method of cutting a substrate with forming along a line of not overlapping modified spot inside the substrate |
EP2228163A1 (en) * | 2000-09-13 | 2010-09-15 | Hamamatsu Photonics K. K. | Method of processing an object with formation of three modified regions as starting point for cutting the object |
EP2228165A1 (en) * | 2000-09-13 | 2010-09-15 | Hamamatsu Photonics K. K. | Method of cutting a substrate with forming along a line of overlapping modified spot inside the substrate |
EP2251135A1 (en) * | 2000-09-13 | 2010-11-17 | Hamamatsu Photonics K. K. | A method of cutting an object along two different directions further using an elastic sheet for dividing the object |
EP2251134A1 (en) * | 2000-09-13 | 2010-11-17 | Hamamatsu Photonics K.K. | A method of cutting an object along two different directions with modified regions located in different positions in the thickness direction of the object |
CN103551737A (en) * | 2000-09-13 | 2014-02-05 | 浜松光子学株式会社 | Laser beam machining method |
JP4663952B2 (en) * | 2000-09-13 | 2011-04-06 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
CN103537796A (en) * | 2000-09-13 | 2014-01-29 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
EP2324948A1 (en) * | 2000-09-13 | 2011-05-25 | Hamamatsu Photonics K. K. | Method of processing an object with formation of three modified regions as starting point for cutting the object |
CN103537809A (en) * | 2000-09-13 | 2014-01-29 | 浜松光子学株式会社 | Laser beam machining method and laser beam machining device |
EP2359976A1 (en) * | 2000-09-13 | 2011-08-24 | Hamamatsu Photonics K. K. | Method of processing an object with formation of three modified regions as starting point for cutting the object |
JP2003010985A (en) * | 2001-06-29 | 2003-01-15 | Toppan Forms Co Ltd | True mark integrated member by laser beam machining |
JP2011216912A (en) * | 2002-03-12 | 2011-10-27 | Hamamatsu Photonics Kk | Controller for formation of starting point region for cutting |
US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP2011216913A (en) * | 2002-03-12 | 2011-10-27 | Hamamatsu Photonics Kk | Formation method of starting point region for cutting |
US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP2011243998A (en) * | 2002-03-12 | 2011-12-01 | Hamamatsu Photonics Kk | Substrate having starting point region for cutting formed therein |
JP2012138598A (en) * | 2002-03-12 | 2012-07-19 | Hamamatsu Photonics Kk | Light-emitting element manufacturing method |
JP2012206172A (en) * | 2002-03-12 | 2012-10-25 | Hamamatsu Photonics Kk | Laser processing apparatus |
JP2013016867A (en) * | 2002-03-12 | 2013-01-24 | Hamamatsu Photonics Kk | Manufacturing method of light-emitting element |
JP2011142329A (en) * | 2002-03-12 | 2011-07-21 | Hamamatsu Photonics Kk | Method of manufacturing light emitting element |
WO2003076120A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Laser processing method |
JP4606741B2 (en) * | 2002-03-12 | 2011-01-05 | 浜松ホトニクス株式会社 | Processing object cutting method |
JP4527098B2 (en) * | 2002-03-12 | 2010-08-18 | 浜松ホトニクス株式会社 | Laser processing method |
JP4515096B2 (en) * | 2002-03-12 | 2010-07-28 | 浜松ホトニクス株式会社 | Laser processing method |
JP4509573B2 (en) * | 2002-03-12 | 2010-07-21 | 浜松ホトニクス株式会社 | Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method |
JP2010068009A (en) * | 2002-03-12 | 2010-03-25 | Hamamatsu Photonics Kk | Method for manufacturing semiconductor chip |
JP2014068031A (en) * | 2002-03-12 | 2014-04-17 | Hamamatsu Photonics Kk | Light-emitting element manufacturing method |
WO2003077295A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
EP3664131A3 (en) * | 2002-03-12 | 2020-08-19 | Hamamatsu Photonics K. K. | Substrate dividing method |
EP3683003A1 (en) * | 2002-03-12 | 2020-07-22 | Hamamatsu Photonics K. K. | Laser processing method |
US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP2009296008A (en) * | 2002-03-12 | 2009-12-17 | Hamamatsu Photonics Kk | Method for manufacturing of light emitting element, light emitting diode, and semiconductor laser element |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
JP2009206534A (en) * | 2002-03-12 | 2009-09-10 | Hamamatsu Photonics Kk | Method of forming cutting start area |
US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
KR100866171B1 (en) * | 2002-03-12 | 2008-10-30 | 하마마츠 포토닉스 가부시키가이샤 | Laser processing method |
WO2003076119A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Method of cutting processed object |
WO2003076118A1 (en) * | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method |
KR100832941B1 (en) * | 2002-03-12 | 2008-05-27 | 하마마츠 포토닉스 가부시키가이샤 | Laser processing method |
JP2003338652A (en) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method for semiconductor laser element and semiconductor laser element |
CN100355031C (en) * | 2002-03-12 | 2007-12-12 | 浜松光子学株式会社 | Method for deviding substrate |
JP2011206851A (en) * | 2002-03-12 | 2011-10-20 | Hamamatsu Photonics Kk | Laser beam machining apparatus |
KR100749972B1 (en) * | 2002-03-12 | 2007-08-16 | 하마마츠 포토닉스 가부시키가이샤 | Method of cutting processed object |
JP2007083309A (en) * | 2002-03-12 | 2007-04-05 | Hamamatsu Photonics Kk | Laser beam machining method |
JPWO2003076118A1 (en) * | 2002-03-12 | 2005-06-30 | 浜松ホトニクス株式会社 | Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method |
US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
JPWO2003076120A1 (en) * | 2002-03-12 | 2005-07-07 | 浜松ホトニクス株式会社 | Laser processing method |
US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
JPWO2003076119A1 (en) * | 2002-03-12 | 2005-07-07 | 浜松ホトニクス株式会社 | Processing object cutting method |
US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
EP2324950A1 (en) * | 2003-07-18 | 2011-05-25 | Hamamatsu Photonics K.K. | Semiconductor substrate to be cut with treated and minute cavity region |
US8852698B2 (en) | 2003-07-18 | 2014-10-07 | Hamamatsu Photonics K.K. | Laser beam machining method, laser beam machining apparatus, and laser beam machining product |
US7605344B2 (en) | 2003-07-18 | 2009-10-20 | Hamamatsu Photonics K.K. | Laser beam machining method, laser beam machining apparatus, and laser beam machining product |
US8058103B2 (en) | 2003-09-10 | 2011-11-15 | Hamamatsu Photonics K.K. | Semiconductor substrate cutting method |
US9511449B2 (en) | 2004-01-09 | 2016-12-06 | Hamamatsu Photonics K.K. | Laser processing method and device |
US11241757B2 (en) | 2004-01-09 | 2022-02-08 | Hamamatsu Photonics K.K. | Laser processing method and device |
US10293433B2 (en) | 2004-01-09 | 2019-05-21 | Hamamatsu Photonics K.K. | Laser processing method and device |
JP2005288501A (en) * | 2004-03-31 | 2005-10-20 | Hokkaido Univ | Laser beam machining method and apparatus |
WO2005107999A1 (en) * | 2004-05-11 | 2005-11-17 | Top Engineering Co., Ltd | Device and method for cutting nonmetalic substrate |
KR100825884B1 (en) * | 2005-11-16 | 2008-04-28 | 가부시키가이샤 덴소 | Laser processing apparatus and laser processing method |
JP2008201143A (en) * | 2008-06-02 | 2008-09-04 | Denso Corp | Cutting process of work |
JP2009188433A (en) * | 2009-05-28 | 2009-08-20 | Mitsubishi Chemicals Corp | Manufacturing method of nitride semiconductor element |
JP2019064916A (en) * | 2013-02-04 | 2019-04-25 | ニューポート コーポレーション | Method and apparatus for cutting transparent and translucent substrate by laser |
WO2014121261A1 (en) * | 2013-02-04 | 2014-08-07 | Newport Corporation | Method and apparatus for laser cutting transparent and semitransparent substrates |
JP2016513016A (en) * | 2013-02-04 | 2016-05-12 | ニューポート コーポレーション | Method and apparatus for laser cutting transparent and translucent substrates |
KR102612497B1 (en) * | 2023-08-10 | 2023-12-11 | 김은수 | Quartz cylinder cutting device and system |
Also Published As
Publication number | Publication date |
---|---|
JP3024990B2 (en) | 2000-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH04111800A (en) | Cutting work process of transparent material | |
JP4175636B2 (en) | Glass cutting method | |
JP6548944B2 (en) | Laser processing equipment | |
KR101839505B1 (en) | Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses | |
JP5202876B2 (en) | Laser processing method and laser processed product | |
JPH03258476A (en) | Laser cutting method and device | |
CN107073653A (en) | For rive or cutting substrate laser processing | |
CN103030266B (en) | Laser cutting method and device | |
JPH0810970A (en) | Method and equipment of laser beam machining | |
JP5642493B2 (en) | Laser cutting apparatus and laser cutting method | |
JPH0532428A (en) | Method for working glass and its apparatus | |
JP2019533631A (en) | Substrate processing station for laser-based processing of sheet glass substrates | |
JP2005095936A (en) | Apparatus and method for laser machining | |
CN111055028A (en) | Laser cutting device and method for expanding controllable cracks based on plasma | |
JP2010138046A (en) | Method and device for working material to be cut | |
JP2009056467A (en) | Apparatus and method for laser beam machining | |
EP0428610B1 (en) | Cutting using high energy radiation | |
JP2005021964A (en) | Laser beam ablation processing method and device therefor | |
CN108161230A (en) | A kind of devices and methods therefor of quasi- 3D processing spherical crown aperture plate | |
JP2001150168A (en) | Groove cutting device by laser | |
CN110818241A (en) | Glass cutting method | |
JP7164136B2 (en) | Laser cutting method | |
JP2003019587A (en) | Method and device for laser beam machining | |
KR20100009335A (en) | Semiconductor wafer dicing system | |
KR102042992B1 (en) | Laser optical system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090121 Year of fee payment: 9 |
|
LAPS | Cancellation because of no payment of annual fees |