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JPH04108531A - 真空処理装置及びその運転方法 - Google Patents

真空処理装置及びその運転方法

Info

Publication number
JPH04108531A
JPH04108531A JP2225321A JP22532190A JPH04108531A JP H04108531 A JPH04108531 A JP H04108531A JP 2225321 A JP2225321 A JP 2225321A JP 22532190 A JP22532190 A JP 22532190A JP H04108531 A JPH04108531 A JP H04108531A
Authority
JP
Japan
Prior art keywords
substrate
cassette
dummy
vacuum
vacuum processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2225321A
Other languages
English (en)
Other versions
JP2644912B2 (ja
Inventor
Shigekazu Kato
加藤　重和
Koji Nishihata
西畑　廣治
Tsunehiko Tsubone
恒彦 坪根
Atsushi Ito
温司 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16827524&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH04108531(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2225321A priority Critical patent/JP2644912B2/ja
Priority to EP00121402A priority patent/EP1076354B1/en
Priority to EP98106162A priority patent/EP0856875B1/en
Priority to EP00121401A priority patent/EP1079418B1/en
Priority to DE69133567T priority patent/DE69133567T2/de
Priority to DE69128861T priority patent/DE69128861T3/de
Priority to DE69133535T priority patent/DE69133535T2/de
Priority to DE69133564T priority patent/DE69133564T2/de
Priority to EP91307625A priority patent/EP0475604B2/en
Priority to EP97111628A priority patent/EP0805481B1/en
Priority to DE69133254T priority patent/DE69133254T2/de
Priority to KR1019910014984A priority patent/KR0184682B1/ko
Priority to US07/751,951 priority patent/US5314509A/en
Publication of JPH04108531A publication Critical patent/JPH04108531A/ja
Priority to US08/096,256 priority patent/US5349762A/en
Priority to US08/302,443 priority patent/US5457896A/en
Priority to US08/443,039 priority patent/US5553396A/en
Priority to US08/593,870 priority patent/US5661913A/en
Priority to US08/882,731 priority patent/US5784799A/en
Application granted granted Critical
Publication of JP2644912B2 publication Critical patent/JP2644912B2/ja
Priority to US09/061,062 priority patent/US5950330A/en
Priority to US09/177,495 priority patent/US6012235A/en
Priority to KR1019980046756A priority patent/KR100212874B1/ko
Priority to KR1019980046757A priority patent/KR100212819B1/ko
Priority to US09/231,451 priority patent/US6055740A/en
Priority to US09/389,461 priority patent/US6112431A/en
Priority to US09/390,684 priority patent/US6044576A/en
Priority to US09/390,681 priority patent/US6070341A/en
Priority to US09/461,432 priority patent/US6330755B1/en
Priority to US09/461,433 priority patent/US6108929A/en
Priority to US09/552,572 priority patent/US6301801B1/en
Priority to US09/614,764 priority patent/US6330756B1/en
Priority to US09/614,770 priority patent/US6263588B1/en
Priority to US09/725,257 priority patent/US6314658B2/en
Priority to US09/765,379 priority patent/US6301802B1/en
Priority to US09/766,596 priority patent/US7089680B1/en
Priority to US09/766,976 priority patent/US6467186B2/en
Priority to US09/766,975 priority patent/US6655044B2/en
Priority to US09/766,597 priority patent/US6625899B2/en
Priority to US09/766,587 priority patent/US6487793B2/en
Priority to US09/767,837 priority patent/US6470596B2/en
Priority to US09/767,834 priority patent/US6332280B2/en
Priority to US09/780,427 priority patent/US6463676B1/en
Priority to US09/780,444 priority patent/US6588121B2/en
Priority to US09/780,394 priority patent/US6460270B2/en
Priority to US09/781,295 priority patent/US6662465B2/en
Priority to US09/781,297 priority patent/US6473989B2/en
Priority to US09/781,452 priority patent/US6634116B2/en
Priority to US09/781,293 priority patent/US6499229B2/en
Priority to US09/781,270 priority patent/US6446353B2/en
Priority to US09/781,298 priority patent/US6484414B2/en
Priority to US09/781,296 priority patent/US6505415B2/en
Priority to US09/781,317 priority patent/US6457253B2/en
Priority to US09/782,196 priority patent/US6487791B2/en
Priority to US09/782,195 priority patent/US6487794B2/en
Priority to US09/782,194 priority patent/US6463678B2/en
Priority to US09/782,197 priority patent/US6490810B2/en
Priority to US09/782,192 priority patent/US6467187B2/en
Priority to US09/782,193 priority patent/US6484415B2/en
Priority to US10/062,087 priority patent/USRE39756E1/en
Priority to US10/060,304 priority patent/USRE39823E1/en
Priority to US10/062,088 priority patent/USRE39824E1/en
Priority to US10/062,618 priority patent/USRE39776E1/en
Priority to US10/066,747 priority patent/USRE39775E1/en
Priority to US10/683,067 priority patent/US6886272B2/en
Priority to US10/682,901 priority patent/US6880264B2/en
Priority to US10/796,207 priority patent/US6904699B2/en
Priority to US10/796,195 priority patent/US6968630B2/en
Priority to US11/204,171 priority patent/US7367135B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/35—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads providing current or voltage to the thermal head
    • B41J2/355—Control circuits for heating-element selection
    • B41J2/36—Print density control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/35—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads providing current or voltage to the thermal head
    • B41J2/355—Control circuits for heating-element selection
    • B41J2/36—Print density control
    • B41J2/365—Print density control by compensation for variation in temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野１ 本発明は、真空処理装置に係り、特に内部のクリーニン
グ処理が必要な真空処理室を有する真空処理装置に関す
るものである。
［従来の技術］ ドライエツチング装置、ＣＶＤ装置あるいはスパッタリ
ング装置などの真空処理装置においては、定められた複
数枚の被処理基板を一つの単位（一般にロットとよばれ
る）として基板カセットに収納して装置に投入し、処理
済みの基板も同一の単位毎に基板カセットに収容して回
収することにより、生産の効率化を図るのが一般的な運
転方法である。
しかしながら、上記のような真空処理装置、特にドライ
エツチング装置、ＣＶＤ装置など活性ガスによる反応を
利用する装置においては、処理を行うに従って反応生成
物が処理容器内に付着、堆積するために、真空性能の劣
化、ゴミの増加、光学モニタ信号のレベル低下などの問
題が生じることかしばしはあり、これを避けるために定
期的に処理容器内をクリーニングする作業が行われてい
る。クリーニング作業には、有機溶剤等によって付着物
を拭き取る、所謂ウェットクリーニングと、付着物を分
解する活性ガスやプラズマを利用するドライクリーニン
グとがあるが、作業性や効率面からはドライクリーニン
グが優れており、こうした機能は生産ラインの自動化が
進むにつれて不可欠なものとなりつつある。
このような機能を備えた真空処理装置の一例として、実
開昭６３−１２７１２５号公報に開示された装置などが
あげられる。
［発明が解決しようとする課題］ 例えば、実開昭６３−１２７１２５号公報に開示された
装置においては、処理室をプラズマクリニングするにあ
たってあらかじめ真空予備室に収容されたダミーウェー
ハを処理室内に搬入し、プラズマクリーニングが終了し
たら搬送手段によってダミーウェーハを真空予備室に戻
すようになされている。このため、ダミーウェーハを収
容する真空予備室は、大きな容積を必要とするとともに
ダミーウェーハ専用の搬送機構を必要とし、装置が複雑
化するという問題があった。
また、−旦、プラズマクリーニングに使用されたダミー
ウェーハが、再び真空予備室に戻された後に正規の処理
を続行するため、真空予備室内では使用済みのダミーウ
ェーハとこれから正規の処理を受けようとする未処理の
ウェーハとが混在することとなり、製品汚染の観点から
好ましくない。
本発明の目的は、上記の問題点を解決し、ドライクリー
ニングが効率的に行え、かつゴミの発生や残留ガスなど
による製品の汚染をなくし、高い生産効率と高い製品歩
留まりを実現する真空処理装置を提供することにある。
〔課題を解決するための手段１ 本発明は、上記目的を達成するために、真空下で被処理
基板が処理されると共に内部がドライクリーニング処理
される真空処理室を有する真空処理装置を、大気設置さ
れ真空処理室のドライクリーング処理で使用されるダミ
ー基板を収納する手段と、該ダミー基板の収納手段と真
空処理室との間でダミー基板を搬送する手段とを備えた
ものとしたものである。
［作　　　用］ 真空処理室内では、被処理基板が真空下で処理される。
該処理を行うに従って反応生成物が真空処理室内に付着
、堆積し、これにより、真空性能の劣化、ゴミの増加、
光学モニタ信号のレベル低下などの問題が生じる、そこ
で、真空容器の内部はドライクリーニング処理される。
つまり、大気設置されダミー基板を収納する手段からダ
ミー基板がダミー基板を搬送する手段により搬出され、
該搬出されたダミー基板は、上記搬送手段により真空処
理室に搬送される。真空処理室のドライクリーニング処
理後、ダミー基板は、上記と逆操作によって真空処理室
からダミー基板の収納手段へ戻される。
即ち、従来のようなダミー基板を収容するための真空予
備室及び専用の搬送機構が不用となり、また、これと共
に、ドライクリーニング処理に使用されたダミー基板と
被処理基板とが混在することもなくなる。
［実　施　例］ 以下、本発明の一実施例を第１図により説明する。
第１図は、本発明による真空処理装置の、半導体ウェー
ハに対するドライエツチング処理を行う装置への応用を
示す図である。
装置は、未処理のウェーハを収納した状態で、装置に処
理対象を供給し、かつ処理済みのウェーハを再度元の位
置に収納して回収するための、複数（通常２５枚）のウ
ェーハを収納できる複数のカセット１ａ、１ｂｊ５よび
ＩＣ１該カセットｌａ、ｌｂ、１ｃを載置し、装置への
導入／払出しの位置を決定するための、位置及び姿勢を
変えることがなく、水平又は水平に近い平面の上に常に
一定位置に固定されたカセット台２ａ、２ｂ、２ｃ１図
示しない真空排気装置及びガス導入装置を装備し、ウェ
ーハを真空雰囲気に導入するためのロードロック室５、
同じくウェーハを大気中に取りだすためのアンロードロ
ック室６、ウエーハニエッチング処理を施すためのエツ
チング１１、それらをそれぞれ気密に分離可能な隔離弁
１２、及びロードロック室５／アンロードロツク室６と
カセットｌａ、ｌｂ、ｌｃとの間に配置され、Ｘ、Ｙ、
Ｚ及びθ軸を有するロボットを備えた、ロードロック室
５／アンロードロツク室６とカセットｌａ、１ｂ、１ｃ
との間でウェーハを授受するための搬送装置１３から構
成されている。
装置の動作としては、まず、未処理のウェーハを収納し
たカセットｌａ、１ｂがストッカ（図示省略）から装置
へとロボット又はオペレータにより供給され、カセット
台２ａ、２ｂ４．：載置される。この時カセット台２ａ
、２ｂは水平な同一平面上にあるため、カセットの供給
動作を単純化することが可能であり、生産ラインの自動
化への対応が容易である。一方、カセット台２ｃには、
ダミーウェーハを収納したカセットｌｃが載置される。
装置は、カセットに付与された生産情報を自ら認識する
か、上位の制御装置から送られる情報に基づくか、ある
いはオペレータの入力する命令によるか、いずれかの方
法によりウェーハに処理を行うことができる。
カセットｌａに収納された未処理のウェーハ２０を搬送
装置１３により抜き取り、搬送装置１３に対してカセッ
トｌａとは反対側に配置されたロードロック室５へ隔離
弁１２ａを通して搬入する。このときウェーハ２０は、
カセットｌａ内のいずれの場所に収納されたものでも良
い、ウェーハ２０は、隔離弁１２ａからロードロック室
５に入った後、隔離弁１２ｂからアンロートロツタ室６
を出るまで、装置外部の雰囲気とは完全に遮断された状
態にあるので、隔離弁１２ａ、１２ｂを境にして仕切り
を設け、カセット台２ａ、２ｂとそこに載置されたカセ
ット１ａ、ｌｂ及び搬送装置１３のみを清浄度の高いク
リーンルーム側に置き、残りの部分は清浄度の低いメイ
ンテナンスルーム側に置くことができる。ロードロック
室５は、隔離弁１２ａを閉した後、排気装置によって所
定の圧力まで真空排気され、次いで隔離弁１２ｂが開放
されてウェーハ２０はエツチング室１１へ搬送され、試
料台８上に載置される。
エツチング室１１に搬入されたウェーハ２０は、所定の
条件によりエツチング処理を施される。この間に５０−
ドロツタ室５は隔離弁１２ａ、１２ｂを閉じた状態で、
ガス導入装置４により大気狂に復帰され、開放された隔
離弁１２ａから１枚目のウェーハと同様に２枚目のウェ
ーハが搬送装置１３によって搬入され、再び排気装置に
よって所定の圧力まで真空排気される。１枚目のウェー
ハ２０のエツチング処理が終了すると、隔離弁１２ｃが
開かれて処理済みのウェーハ２０がアンロードロック室
６に搬出され、続いて隔離弁１２ｃが閉じられ、隔離弁
１２ｂが開かれて２枚目のウェーハがロードロック室５
から搬入され、隔離弁１２ｂを閉じた後エツチング処理
が開始される。
アンロードロック室６に搬出された処理済みつニーム２
０は、アンロードロック室６を大気圧に復帰した後、隔
離弁１２ｄを通して搬送装置１３によって大気中に取り
だされ、当初収納されていたカセットｌａ内の元の位置
へ戻される。
以上の動作を繰り返して、カセットｌａに収納されてい
た未処理ウェーハの処理が完了し、元の位置に再収納し
終わるとカセットｌａは回収可能となり、別の未処理の
ウェーハを収納したカセットと交換されるが、装置はそ
の間カセットｌｂ内の未処理ウェーハの処理を続けてお
り、カセット１ｂの全てのウェーハの処理が完了する前
に別の未処理のウェーハを収納したカセットが供給され
れば、装置は常に連続的に稼働可能である。この時カセ
ット１ａ、カセットｌｂは水平な同一平面上にあるため
、カセット１ａの回収作業及び別の未処理のウェーハを
収納したカセットの供給作業を、搬送装置１３によるカ
セット１ｂへのアクセスに影響を与えることなく行うこ
とができる。
エツチング室１１は、処理を重ねるにつれて反応生成物
が内壁面に付着、堆積してくるためにプラズマクリーニ
ングによって付着物を除去し、元の状態に復旧してやる
必要があるが、プラズマクリーニングの実施に当っては
、カセット１ｃに収納されたダミーウェーハ３０を搬送
装置１３によって抜取り、以降は前記被処理ウェーハ２
０の場合と全く同様にして処理を行った後、ダミーウェ
ーハ３０をカセットｌｃ内の元の位置に戻すことができ
、ダミーウェーハ３０は常にカセットｌｃ内にストック
されていることになる。尚、カセット１ｃのダミーウェ
ーハ３０が全てプラズマクリニングで使用された場合や
、数回の使用により使用不良となった場合、ダミーウェ
ーハ３０はカセットｌｃごと全て交換される。
従って、プラズマクリーニングを特別な処理シーケンス
として扱う必要は無く、通常のエツチング処理の中に組
み込んで一連の作業として行うことができ、クリーニン
グを実施する周期も任意に設定することが可能である。
装置のハードウェア上からもプラズマクリーニングの為
の専用の機構は必要が無く、複数のカセ・ント台の一つ
（本例の場合２ｃ）にタミーウェーハ３０を収納したカ
セット（本例の場合１ｃ）を設置するだけで良く、プラ
ズマクリーニングの必要が無い用途の場合には、ダミー
ウェーハ３０を収納したカセットの代わりに、被処理ウ
ェーハ２０を収納したカセットを設置することにより、
より効率良く生産を行うことができることは説明するま
でもない。
また、−旦プラズマクリーニングに使用されたダミーウ
ェーハは、再び大気中の元のカセットに戻るようになさ
れているので、真空室内では使用済みのダミーウェーハ
とこれから正規の処理を受けようとする未処理のウェー
ハとが混在することがなく、製品の汚染の心配も無い、
更に、使用済みのダミーウェーハは、カセットの元の位
置に戻されるので、使用済みのダミーウェーハと未使用
のダミーウェーハまたは使用頻度の少ないダミーウェー
ハと高いダミーウェーハとの混同を防止でき、プラズマ
クリーニングにダミーウェーハを有効に、かつ、不都合
なく使用し得る。
〔発明の効果〕
以上説明したように、本発明によれば、ドライクリーニ
ング処理が効率的に行え、かつゴミの発生や残留ガスな
どによる製品の汚染をなくし、高い生産効率と高い製品
歩留まりを実現する真空処理装置を提供することができ
るという効果が有る。
【図面の簡単な説明】
第１図は、本発明の一実施例のドライエツチング装置の
平面図である。

Claims (1)

  1. 【特許請求の範囲】 １、真空下で被処理基板が処理されると共に内部がドラ
    イクリーニング処理される真空処理室を有する真空処理
    装置において、大気設置され前記真空処理室のドライク
    リーニング処理で使用されるダミー基板を収納する手段
    と、該ダミー基板の収納手段と前記真空処理室との間で
    前記ダミー基板を搬送する手段とを備えたことを特徴と
    する真空処理装置。 ２、基板カセットを複数個大気設置し、該基板カセット
    に前記被処理基板を収納し、前記基板カセットの少なく
    とも一つに前記ダミー基板を収納するようにした第１請
    求項に記載の真空処理装置。 ３、前記ダミー基板を収納する基板カセットと前記被処
    理基板を収納する基板カセットとを別設置した第２請求
    項に記載の真空処理装置。 ４、前記ダミー基板を搬送する手段として、前記被処理
    基板を搬送する手段を用いた第１ないし第３請求項に記
    載の真空処理装置。 ５、大気設置され被処理基板を収納した基板カセットと
    、前記被処理基板に真空下で処理を行うための少なくと
    も一つの真空処理室と、前記基板カセットと前記真空処
    理室との間で前記被処理基板を真空雰囲気に搬出入する
    少なくとも一つのロードロック室と、該ロードロック室
    と前記基板カセットとの間で前記被処理基板を搬送する
    基板搬送手段とを有する真空処理装置において、前記基
    板カセットは略水平面上に複数個設置され、前記基板カ
    セットの少なくとも一つにダミー基板が収納され、前記
    基板搬送手段により前記ダミー基板を収納した基板カセ
    ットから該基板カセットの位置及び姿勢を変えることな
    く前記ダミー基板を搬出し、かつ、使用済みのダミー基
    板を使用前に収納されていた元の位置に搬入するように
    したことを特徴とする真空処理装置。
JP2225321A 1990-08-09 1990-08-29 真空処理装置及びその運転方法 Expired - Lifetime JP2644912B2 (ja)

Priority Applications (67)

Application Number Priority Date Filing Date Title
JP2225321A JP2644912B2 (ja) 1990-08-29 1990-08-29 真空処理装置及びその運転方法
EP00121402A EP1076354B1 (en) 1990-08-29 1991-08-19 Vacuum processing apparatus and operating method therefor
EP98106162A EP0856875B1 (en) 1990-08-29 1991-08-19 Operating method for vacuum processing apparatus
EP00121401A EP1079418B1 (en) 1990-08-29 1991-08-19 Vacuum processing apparatus and operating method therefor
DE69133567T DE69133567T2 (de) 1990-08-29 1991-08-19 Vakuumbehandlungsvorrichtung und Arbeitsverfahren dafür
DE69128861T DE69128861T3 (de) 1990-08-29 1991-08-19 Vakuumsbehandlungsvorrichtung und Reinigungsverfahren dafür
DE69133535T DE69133535T2 (de) 1990-08-29 1991-08-19 Arbeitsverfahren für Vakuumbehandlungsvorrichtung
DE69133564T DE69133564T2 (de) 1990-08-29 1991-08-19 Vakuumbehandlungsvorrichtung und Arbeitsverfahren dafür
EP91307625A EP0475604B2 (en) 1990-08-29 1991-08-19 Vacuum processing apparatus and cleaning method therefor
EP97111628A EP0805481B1 (en) 1990-08-29 1991-08-19 Operating method for vacuum processing apparatus
DE69133254T DE69133254T2 (de) 1990-08-29 1991-08-19 Arbeitsverfahren für Vakuumbehandlungsvorrichtung
KR1019910014984A KR0184682B1 (ko) 1990-08-29 1991-08-29 진공처리장치 및 그 운전방법
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