[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JP7515327B2 - 基板離脱方法及びプラズマ処理装置 - Google Patents

基板離脱方法及びプラズマ処理装置 Download PDF

Info

Publication number
JP7515327B2
JP7515327B2 JP2020120189A JP2020120189A JP7515327B2 JP 7515327 B2 JP7515327 B2 JP 7515327B2 JP 2020120189 A JP2020120189 A JP 2020120189A JP 2020120189 A JP2020120189 A JP 2020120189A JP 7515327 B2 JP7515327 B2 JP 7515327B2
Authority
JP
Japan
Prior art keywords
substrate
electrostatic chuck
plasma
gas
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020120189A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022024265A (ja
Inventor
康史 宇津木
務 里吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2020120189A priority Critical patent/JP7515327B2/ja
Priority to KR1020210086345A priority patent/KR102616554B1/ko
Priority to TW110124478A priority patent/TW202209487A/zh
Priority to CN202110762462.7A priority patent/CN113936986B/zh
Publication of JP2022024265A publication Critical patent/JP2022024265A/ja
Application granted granted Critical
Publication of JP7515327B2 publication Critical patent/JP7515327B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15Devices for holding work using magnetic or electric force acting directly on the work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020120189A 2020-07-13 2020-07-13 基板離脱方法及びプラズマ処理装置 Active JP7515327B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020120189A JP7515327B2 (ja) 2020-07-13 2020-07-13 基板離脱方法及びプラズマ処理装置
KR1020210086345A KR102616554B1 (ko) 2020-07-13 2021-07-01 기판 이탈 방법 및 플라즈마 처리 장치
TW110124478A TW202209487A (zh) 2020-07-13 2021-07-02 基板脫離方法及電漿處理裝置
CN202110762462.7A CN113936986B (zh) 2020-07-13 2021-07-06 基板脱离方法和等离子体处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020120189A JP7515327B2 (ja) 2020-07-13 2020-07-13 基板離脱方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2022024265A JP2022024265A (ja) 2022-02-09
JP7515327B2 true JP7515327B2 (ja) 2024-07-12

Family

ID=79274312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020120189A Active JP7515327B2 (ja) 2020-07-13 2020-07-13 基板離脱方法及びプラズマ処理装置

Country Status (4)

Country Link
JP (1) JP7515327B2 (zh)
KR (1) KR102616554B1 (zh)
CN (1) CN113936986B (zh)
TW (1) TW202209487A (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117836912A (zh) * 2022-08-03 2024-04-05 株式会社日立高新技术 晶片处理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056928A (ja) 2012-09-12 2014-03-27 Tokyo Electron Ltd 離脱制御方法及びプラズマ処理装置
JP2015225890A (ja) 2014-05-26 2015-12-14 パナソニックIpマネジメント株式会社 プラズマ処理装置及び方法
JP2018006392A (ja) 2016-06-28 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2018186179A (ja) 2017-04-25 2018-11-22 東京エレクトロン株式会社 基板処理装置及び基板取り外し方法
WO2020026549A1 (ja) 2018-07-30 2020-02-06 アルバックテクノ株式会社 基板リフト装置及び基板搬送方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100319468B1 (ko) * 1995-06-30 2002-04-22 히가시 데쓰로 플라즈마 처리 방법
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JP2002134489A (ja) 2000-10-25 2002-05-10 Tokyo Electron Ltd 基板除電方法、気相堆積装置、半導体装置の製造方法
JP2002270682A (ja) * 2001-03-13 2002-09-20 Toshiba Corp 静電チャック装置および半導体処理装置ならびに半導体製造装置および半導体処理方法
JP4790458B2 (ja) * 2006-03-22 2011-10-12 東京エレクトロン株式会社 プラズマ処理装置
JP4922705B2 (ja) * 2006-09-15 2012-04-25 株式会社日立ハイテクノロジーズ プラズマ処理方法および装置
JP2010040822A (ja) * 2008-08-06 2010-02-18 Tokyo Electron Ltd 静電吸着装置の除電処理方法、基板処理装置、及び記憶媒体
JP5973840B2 (ja) * 2011-12-20 2016-08-23 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
CN104576280B (zh) * 2013-10-23 2017-10-20 中微半导体设备(上海)有限公司 等离子体处理腔室及其去夹持装置和方法
JP6401901B2 (ja) 2013-11-13 2018-10-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6496579B2 (ja) * 2015-03-17 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2017216346A (ja) * 2016-05-31 2017-12-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP6967944B2 (ja) * 2017-11-17 2021-11-17 東京エレクトロン株式会社 プラズマ処理装置
KR102014610B1 (ko) * 2017-12-27 2019-08-26 캐논 톡키 가부시키가이샤 정전척, 성막 장치, 기판 흡착/박리 방법, 성막 방법, 및 전자 디바이스의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056928A (ja) 2012-09-12 2014-03-27 Tokyo Electron Ltd 離脱制御方法及びプラズマ処理装置
JP2015225890A (ja) 2014-05-26 2015-12-14 パナソニックIpマネジメント株式会社 プラズマ処理装置及び方法
JP2018006392A (ja) 2016-06-28 2018-01-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2018186179A (ja) 2017-04-25 2018-11-22 東京エレクトロン株式会社 基板処理装置及び基板取り外し方法
WO2020026549A1 (ja) 2018-07-30 2020-02-06 アルバックテクノ株式会社 基板リフト装置及び基板搬送方法

Also Published As

Publication number Publication date
CN113936986A (zh) 2022-01-14
JP2022024265A (ja) 2022-02-09
KR102616554B1 (ko) 2023-12-20
CN113936986B (zh) 2024-08-23
KR20220008223A (ko) 2022-01-20
TW202209487A (zh) 2022-03-01

Similar Documents

Publication Publication Date Title
JP4421874B2 (ja) プラズマ処理装置及びプラズマ処理方法
US8236109B2 (en) Component cleaning method and storage medium
JP5371238B2 (ja) プラズマ処理装置およびプラズマ処理方法
US10410902B2 (en) Plasma processing apparatus
US9087676B2 (en) Plasma processing method and plasma processing apparatus
US9530657B2 (en) Method of processing substrate and substrate processing apparatus
JP7138418B2 (ja) 脱離制御方法及びプラズマ処理装置
US20170221684A1 (en) Plasma processing method
KR102538188B1 (ko) 플라즈마 처리 장치의 세정 방법
US9147556B2 (en) Plasma processing method and plasma processing apparatus
US20080230181A1 (en) Plasma processing apparatus and structure therein
JP2018011007A (ja) プラズマエッチング方法、プラズマエッチング装置、および基板載置台
JP5503503B2 (ja) プラズマ処理装置
US9253862B2 (en) Plasma processing method and plasma processing apparatus
TW201526098A (zh) 清洗方法及基板處理裝置
JP2007123796A (ja) プラズマ処理室用構造物、プラズマ処理室、及びプラズマ処理装置
TW201933471A (zh) 電漿處理裝置
JP4642809B2 (ja) プラズマ処理方法及びプラズマ処理装置
US7541283B2 (en) Plasma processing method and plasma processing apparatus
JP2009224385A (ja) プラズマ処理用環状部品、プラズマ処理装置、及び外側環状部材
JP4709047B2 (ja) 基板処理装置及び側壁部品
JP7515327B2 (ja) 基板離脱方法及びプラズマ処理装置
JP2021090025A (ja) 基板処理方法及び基板処理装置
JP2022019549A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230320

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20231221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240702

R150 Certificate of patent or registration of utility model

Ref document number: 7515327

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150