JP7540452B2 - 回路基板の製造方法 - Google Patents
回路基板の製造方法 Download PDFInfo
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- JP7540452B2 JP7540452B2 JP2022035588A JP2022035588A JP7540452B2 JP 7540452 B2 JP7540452 B2 JP 7540452B2 JP 2022035588 A JP2022035588 A JP 2022035588A JP 2022035588 A JP2022035588 A JP 2022035588A JP 7540452 B2 JP7540452 B2 JP 7540452B2
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
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- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- LSEFCHWGJNHZNT-UHFFFAOYSA-M methyl(triphenyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 LSEFCHWGJNHZNT-UHFFFAOYSA-M 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
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- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- BMLIZLVNXIYGCK-UHFFFAOYSA-N monuron Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C=C1 BMLIZLVNXIYGCK-UHFFFAOYSA-N 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical class CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
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- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- JFOJYGMDZRCSPA-UHFFFAOYSA-J octadecanoate;tin(4+) Chemical compound [Sn+4].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O JFOJYGMDZRCSPA-UHFFFAOYSA-J 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
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- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
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- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
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- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
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- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 102200061170 rs104894694 Human genes 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
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- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- LTURHSAEWJPFAA-UHFFFAOYSA-N sulfuric acid;1,3,5-triazine-2,4,6-triamine Chemical compound OS(O)(=O)=O.NC1=NC(N)=NC(N)=N1 LTURHSAEWJPFAA-UHFFFAOYSA-N 0.000 description 1
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- 125000002298 terpene group Chemical group 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GFZMLBWMGBLIDI-UHFFFAOYSA-M tetrabutylphosphanium;acetate Chemical compound CC([O-])=O.CCCC[P+](CCCC)(CCCC)CCCC GFZMLBWMGBLIDI-UHFFFAOYSA-M 0.000 description 1
- RKHXQBLJXBGEKF-UHFFFAOYSA-M tetrabutylphosphanium;bromide Chemical compound [Br-].CCCC[P+](CCCC)(CCCC)CCCC RKHXQBLJXBGEKF-UHFFFAOYSA-M 0.000 description 1
- IBWGNZVCJVLSHB-UHFFFAOYSA-M tetrabutylphosphanium;chloride Chemical compound [Cl-].CCCC[P+](CCCC)(CCCC)CCCC IBWGNZVCJVLSHB-UHFFFAOYSA-M 0.000 description 1
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- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- XMQSELBBYSAURN-UHFFFAOYSA-M triphenyl(propyl)phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(CCC)C1=CC=CC=C1 XMQSELBBYSAURN-UHFFFAOYSA-M 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
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- KAAYGTMPJQOOGY-UHFFFAOYSA-N tris(2,5-dimethylphenyl)phosphane Chemical compound CC1=CC=C(C)C(P(C=2C(=CC=C(C)C=2)C)C=2C(=CC=C(C)C=2)C)=C1 KAAYGTMPJQOOGY-UHFFFAOYSA-N 0.000 description 1
- RERMPCBBVZEPBS-UHFFFAOYSA-N tris(2,6-dimethylphenyl)phosphane Chemical compound CC1=CC=CC(C)=C1P(C=1C(=CC=CC=1C)C)C1=C(C)C=CC=C1C RERMPCBBVZEPBS-UHFFFAOYSA-N 0.000 description 1
- IIOSDXGZLBPOHD-UHFFFAOYSA-N tris(2-methoxyphenyl)phosphane Chemical compound COC1=CC=CC=C1P(C=1C(=CC=CC=1)OC)C1=CC=CC=C1OC IIOSDXGZLBPOHD-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
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- LFNXCUNDYSYVJY-UHFFFAOYSA-N tris(3-methylphenyl)phosphane Chemical compound CC1=CC=CC(P(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 LFNXCUNDYSYVJY-UHFFFAOYSA-N 0.000 description 1
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- LQEKTSMTEYLBLJ-UHFFFAOYSA-N tris(4-ethoxyphenyl)phosphane Chemical compound C1=CC(OCC)=CC=C1P(C=1C=CC(OCC)=CC=1)C1=CC=C(OCC)C=C1 LQEKTSMTEYLBLJ-UHFFFAOYSA-N 0.000 description 1
- PCCAGZSOGFNURV-UHFFFAOYSA-N tris(4-ethylphenyl)phosphane Chemical compound C1=CC(CC)=CC=C1P(C=1C=CC(CC)=CC=1)C1=CC=C(CC)C=C1 PCCAGZSOGFNURV-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- NTUMNRFLAZXNBW-UHFFFAOYSA-N tris(4-propan-2-ylphenyl)phosphane Chemical compound C1=CC(C(C)C)=CC=C1P(C=1C=CC(=CC=1)C(C)C)C1=CC=C(C(C)C)C=C1 NTUMNRFLAZXNBW-UHFFFAOYSA-N 0.000 description 1
- JTOQWGJGVSYTTN-UHFFFAOYSA-N tris(4-propylphenyl)phosphane Chemical compound C1=CC(CCC)=CC=C1P(C=1C=CC(CCC)=CC=1)C1=CC=C(CCC)C=C1 JTOQWGJGVSYTTN-UHFFFAOYSA-N 0.000 description 1
- UQHFPPSBVOIUFM-UHFFFAOYSA-N tris(4-tert-butylphenyl)phosphane Chemical compound C1=CC(C(C)(C)C)=CC=C1P(C=1C=CC(=CC=1)C(C)(C)C)C1=CC=C(C(C)(C)C)C=C1 UQHFPPSBVOIUFM-UHFFFAOYSA-N 0.000 description 1
- UGNAOCDIZFIEQK-UHFFFAOYSA-N tris[4-[(2-methylpropan-2-yl)oxy]phenyl]phosphane Chemical compound C1=CC(OC(C)(C)C)=CC=C1P(C=1C=CC(OC(C)(C)C)=CC=1)C1=CC=C(OC(C)(C)C)C=C1 UGNAOCDIZFIEQK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920001866 very low density polyethylene Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
- H05K3/4655—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1121—Cooling, e.g. specific areas of a PCB being cooled during reflow soldering
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Description
[1] (A)支持体と、該支持体上に設けられた、樹脂組成物で形成された樹脂組成物層とを含む絶縁樹脂フィルムを準備する工程、
(B)内層基板上に、樹脂組成物層が内層基板と接合するように絶縁樹脂フィルムを積層する工程、
(C)樹脂組成物層を熱硬化させ、絶縁層を形成する工程、
(E)絶縁層にビアを形成し、さらに絶縁層上に導体層を形成する工程、
(F)絶縁層を175℃以上205℃以下の温度で加熱する工程、及び
(G)絶縁層を110℃以上175℃未満の温度で加熱する工程、をこの順で含み、
樹脂組成物が、エポキシ樹脂、硬化剤、及び無機充填材を含み、
無機充填材の含有量が、樹脂組成物の不揮発成分を100質量%としたとき、40質量%以上80質量%以下であり、
工程(F)での加熱温度をT3(℃)とし、工程(G)での加熱温度をT4(℃)としたとき、20℃≦T3-T4≦70℃を満たす、回路基板の製造方法。
[2] 工程(C)の後、工程(E)の前に、
(D)絶縁層を加熱する工程、を含む、[1]に記載の回路基板の製造方法。
[3] 工程(D)の加熱温度T2が、100℃以上150℃以下である、[2]に記載の回路基板の製造方法。
[4] 工程(F)の後、工程(G)の前に、
(F-1)絶縁層を冷却する工程、をさらに含む、[1]~[3]のいずれかに記載の回路基板の製造方法。
[5] 工程(F)の加熱時間が、10分間以上である、[1]~[4]のいずれかに記載の回路基板の製造方法。
[6] 工程(G)の加熱時間が、10分間以上である、[1]~[5]のいずれかに記載の回路基板の製造方法。
[7] 工程(C)の加熱温度T1が、100℃以上190℃以下である、[1]~[6]のいずれかに記載の回路基板の製造方法。
本発明の回路基板の製造方法で使用する絶縁樹脂フィルムは、支持体と、該支持体上に設けられた、樹脂組成物で形成された樹脂組成物層とを含む。以下、絶縁樹脂フィルムを構成する各層について詳細に説明する。
絶縁樹脂フィルムは支持体を含む。支持体としては、例えば、プラスチック材料からなるフィルム、金属箔、離型紙が挙げられ、プラスチック材料からなるフィルム、金属箔が好ましい。
絶縁樹脂フィルムは、樹脂組成物からなる樹脂組成物層を含む。樹脂組成物層は、支持体と接合し絶縁樹脂フィルムを形成しており、回路基板の製造に際しては、内層基板上に樹脂組成物層が積層され、熱硬化により絶縁層を形成する。樹脂組成物層を形成する樹脂組成物は、エポキシ樹脂、硬化剤、及び無機充填材を含み、無機充填材の含有量が、樹脂組成物の不揮発成分を100質量%としたとき、40質量%以上80質量%以下である組成物が挙げられる。樹脂組成物は、必要に応じて、さらに熱可塑性樹脂、硬化促進剤、及びその他の添加剤を含んでいてもよい。
樹脂組成物は、エポキシ樹脂を含有する。エポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ビスフェノールAF型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、トリスフェノール型エポキシ樹脂、ナフトールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、tert-ブチル-カテコール型エポキシ樹脂、ナフタレン型エポキシ樹脂、ナフトール型エポキシ樹脂、アントラセン型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、グリシジルエステル型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、線状脂肪族エポキシ樹脂、ブタジエン構造を有するエポキシ樹脂、脂環式エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、シクロヘキサンジメタノール型エポキシ樹脂、ナフチレンエーテル型エポキシ樹脂及びトリメチロール型エポキシ樹脂等が挙げられる。エポキシ樹脂は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
樹脂組成物は、硬化剤を含有する。硬化剤としては、エポキシ樹脂を硬化する機能を有する限り特に限定されず、例えば、フェノール系硬化剤、ナフトール系硬化剤、活性エステル系硬化剤、ベンゾオキサジン系硬化剤、及びシアネートエステル系硬化剤が挙げられる。中でも、硬化剤としては、本発明の効果を顕著に得る観点から、フェノール系硬化剤、及び活性エステル系硬化剤から選択される1種以上を含むことが好ましく、フェノール系硬化剤を含むことがより好ましい。硬化剤は1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
樹脂組成物は、無機充填材を含有する。無機充填材を樹脂組成物に含有させることにより、樹脂組成物の硬化物の反りの発生を抑制することが可能になる。
樹脂組成物は、上述したエポキシ樹脂、硬化剤、及び無機充填材に組み合わせて、任意の成分として、更に熱可塑性樹脂を含んでいてもよい。この熱可塑性樹脂には、上述した成分に該当するものは含めない。
樹脂組成物は、上述したエポキシ樹脂、硬化剤、及び無機充填材に組み合わせて、任意の成分として、さらに硬化促進剤を含んでいてもよい。この硬化促進剤には、上述した成分に該当するものは含めない。硬化促進剤は、エポキシ樹脂の硬化を促進させる硬化触媒としての機能を有する。
樹脂組成物は、上述した成分に組み合わせて、さらに任意の不揮発成分として、任意の添加剤を含んでいてもよい。任意の添加剤としては、例えば、難燃剤;重合開始剤;有機銅化合物、有機亜鉛化合物、有機コバルト化合物等の有機金属化合物;フタロシアニンブルー、フタロシアニングリーン、アイオディングリーン、ジアゾイエロー、クリスタルバイオレット、酸化チタン、カーボンブラック等の着色剤;ハイドロキノン、カテコール、ピロガロール、フェノチアジン等の重合禁止剤;シリコーン系レベリング剤、アクリルポリマー系レベリング剤等のレベリング剤;ベントン、モンモリロナイト等の増粘剤;シリコーン系消泡剤、アクリル系消泡剤、フッ素系消泡剤、ビニル樹脂系消泡剤等の消泡剤;ベンゾトリアゾール系紫外線吸収剤等の紫外線吸収剤;尿素シラン等の接着性向上剤;トリアゾール系密着性付与剤、テトラゾール系密着性付与剤、トリアジン系密着性付与剤等の密着性付与剤;ヒンダードフェノール系酸化防止剤等の酸化防止剤;スチルベン誘導体等の蛍光増白剤;フッ素系界面活性剤、シリコーン系界面活性剤等の界面活性剤;リン系難燃剤(例えばリン酸エステル化合物、ホスファゼン化合物、ホスフィン酸化合物、赤リン)、窒素系難燃剤(例えば硫酸メラミン)、ハロゲン系難燃剤、無機系難燃剤(例えば三酸化アンチモン)等の難燃剤;リン酸エステル系分散剤、ポリオキシアルキレン系分散剤、アセチレン系分散剤、シリコーン系分散剤、アニオン性分散剤、カチオン性分散剤等の分散剤;ボレート系安定剤、チタネート系安定剤、アルミネート系安定剤、ジルコネート系安定剤、イソシアネート系安定剤、カルボン酸系安定剤、カルボン酸無水物系安定剤等の安定剤;第三級アミン類等の光重合開始助剤;ピラリゾン類、アントラセン類、クマリン類、キサントン類、チオキサントン類等の光増感剤;が挙げられる。任意の添加剤は、1種類を単独で用いてもよく、2種以上を組み合わせて用いてもよい。
本発明の回路基板の製造方法は、
(A)支持体と、該支持体上に設けられた、樹脂組成物で形成された樹脂組成物層とを含む絶縁樹脂フィルムを準備する工程、
(B)内層基板上に、樹脂組成物層が内層基板と接合するように絶縁樹脂フィルムを積層する工程、
(C)樹脂組成物層を熱硬化させ、絶縁層を形成する工程、
(E)絶縁層にビアを形成し、さらに絶縁層上に導体層を形成する工程、
(F)絶縁層を175℃以上205℃以下の温度で加熱する工程、及び
(G)絶縁層を110℃以上175℃未満の温度で加熱する工程、をこの順で含み、
工程(F)での加熱温度をT3(℃)とし、工程(G)での加熱温度をT4(℃)としたとき、20℃≦T3-T4≦70℃を満たす。
(D)絶縁層を加熱する工程、
工程(D)は、工程(C)の後、工程(E)の前に行うことが好ましい。よって、本発明の回路基板の製造方法は、工程(A)から工程(G)の順で実施することが好ましい。
工程(A)では、絶縁樹脂フィルムを準備する。絶縁樹脂フィルムについては上記したとおりである。
工程(B)では、内層基板上に、樹脂組成物層が内層基板と接合するように絶縁樹脂フィルムを積層し、積層体を得る。
工程(C)では、樹脂組成物層を熱硬化させ、絶縁層を形成する。通常、工程(C)における熱硬化によっては樹脂組成物の硬化反応は完全には進行しない。よって、工程(C)における熱硬化は「ハーフキュア」と呼ばれることがある。
工程(D)では、絶縁層を加熱し、樹脂組成物層の硬化による応力を緩和させる。
工程(E)では、絶縁層にビアを形成し、さらに絶縁層上に導体層を形成する。工程(E)は、下記工程(E-1)、工程(E-2)、及び工程(E-3)をこの順で含むことが好ましい。
(E-1) 絶縁層にビアを形成する工程、
(E-2) 絶縁層を粗化処理する工程、及び
(E-3) 絶縁層上に導体層を形成する工程
工程(F)では、絶縁層を175℃以上205℃以下の温度で加熱し、絶縁層の硬化度を上昇させる。通常、工程(F)における熱硬化によって樹脂組成物の硬化反応が十分に進行する。よって、工程(F)における熱硬化は「フルキュア」と呼ばれることがある。工程(F)を行うことで絶縁層と導体層との間の密着性を向上させることが可能になる。
工程(G)は、絶縁層を110℃以上175℃未満の温度で加熱し、工程(F)での絶縁層の加熱により発生した応力を緩和する。工程(G)を行うことで絶縁層内部に蓄積された応力が緩和され、回路基板の反りの発生を抑制することが可能になる。
本発明の製造方法により得られた回路基板を用いて、回路基板を含む半導体装置を製造することができる。
液状ビスフェノールA型エポキシ樹脂(エポキシ当量180g/eq.、三菱ケミカル社製「jER828EL」)15部と、ビフェニル型エポキシ樹脂(エポキシ当量290g/eq.、日本化薬社製「NC3000H」)30部、ナフタレン型4官能エポキシ樹脂(エポキシ当量:162g/eq.、DIC社製「HP-4700」)5部、フェノキシ樹脂(三菱ケミカル社製「YX7553」不揮発分30質量%のメチルエチルケトン(以下「MEK」と略称する。)とシクロヘキサノンの1:1溶液)2部とをMEK8部、シクロヘキサノン8部に撹拌しながら加熱溶解させた。そこへ、フェノールノボラック系硬化剤(DIC社製「LA-7054」不揮発分60質量%のMEK溶液、フェノール性水酸基当量124g/eq.)32部、硬化促進剤であるテトラブチルフォスホニウムデカン酸塩(北興化学工業社製、「TBP-DA」)0.2部、球形シリカ(平均粒径0.5μm、アミノシラン処理付「SOC2」アドマテックス社製)120部、ポリビニルブチラール樹脂溶液(積水化学社製「KS-1」、不揮発分15質量%のエタノールとトルエンの質量比1:1の混合溶液)2部を高速回転ミキサーで均一に分散して、ワニス状の樹脂組成物1を作製した。
ビフェニルアラルキル型エポキシ樹脂(日本化薬社製「NC3000H」、エポキシ当量約290/eq.)5部、ナフタレン型エポキシ樹脂(DIC社製「HP4032SS」、エポキシ当量約145g/eq.)10部、ビスフェノールA型エポキシ樹脂及びビスフェノールF型エポキシ樹脂混合品(日鉄ケミカル&マテリアル社製「ZX1059」、エポキシ当量165g/eq.)5部、活性エステル系硬化剤(DIC社製「HPC-8150-62T」、活性基当量約229g/eq.、固形分61.5質量%のトルエン溶液)30部、フェノール系硬化剤(DIC社製「LA3018-50P」、活性基当量約151、固形分50%の2-メトキシプロパノール溶液)5部、フェノキシ樹脂(三菱ケミカル社製「YX7553BH30」固形分30質量%のMEKとシクロヘキサノンの1:1溶液)5部、4-ジメチルアミノピリジン(固形分5質量%のMEK溶液)4部、MEK30部、及びアミン系アルコキシシラン化合物(信越化学工業社製「KBM573」)で表面処理された球形シリカ(アドマテックス社製「SO-C2」、平均粒子径0.5μm)80部を、ミキサーを用いて均一に分散して、ワニス状の樹脂組成物2を作製した。
液状ビスフェノールA型エポキシ樹脂(エポキシ当量180g/eq.、三菱ケミカル社製「jER828EL」)35部と、ビフェニル型エポキシ樹脂(エポキシ当量290g/eq.、日本化薬社製「NC3000H」)35部、フェノキシ樹脂(重量平均分子量38000、三菱ケミカル社製「YX6954」不揮発分30質量%のMEKとシクロヘキサノンの1:1溶液)40部とをMEK10部、シクロヘキサノン3部に撹拌しながら加熱溶解させた。そこへ、フェノールノボラック系硬化剤(DIC社製「LA-7054」不揮発分60質量%のMEK溶液、フェノール性水酸基当量124g/eq.)45部、硬化促進剤である(4-メチルフェニル)トリフェニルホスホニウムチオシアネート(北興化学工業社製、「TPTP-SCN」不揮発分10質量%のジメチルホルムアミド(以下「DMF」と略称する。)溶液)2部、球形シリカ(平均粒径0.5μm、アミノシラン処理付「SOC2」アドマテックス社製)75部、高速回転ミキサーで均一に分散して、ワニス状の樹脂組成物3を作製した。
<密着性評価用サンプルの製造>
-工程(A)-
樹脂組成物1を、支持体であるPETフィルム(厚さ38μm)上に、乾燥後の厚さが35μmになるよう、ダイコーターにて均一に塗布し、80~120℃(平均100℃)で5分間乾燥させて、PETフィルムおよび樹脂組成物層から構成される絶縁樹脂フィルムを得た。
銅張積層板(パナソニック社製「R1515A」、計0.8mm厚)の両面に得られた絶縁樹脂フィルムの樹脂組成物層をラミネートし、密着性評価用基板とした。
上記密着性評価用基板を、熱風循環炉を用いて、下記表に示す温度、時間の条件(T1)で樹脂組成物層を熱硬化させ絶縁層を形成した後、室温まで冷却して密着性評価用基板T1を得た。
密着性評価用基板T1を、下記表に示す温度、時間の条件(T2)で加熱処理を行った後、室温まで冷却し、密着性評価用基板T2を得た。
(ビアホールの形成)
密着性評価用基板T2を、PETフィルムを剥離せずにCO2レーザー加工機(HITACHI社製「LC-K212」)を使用して、パワー:1.35W、ショット数:2、狙いトップ径:50μmの条件で、5箇所穴あけ加工を行った。これにより、内層基板の回路導体上に開口するビアホールが複数形成され、各ビアホール側面において内層基板の導体層が露出した。
PETフィルムを剥離し、絶縁層表面を、膨潤液であるアトテックジャパン社製のスウェリング・ディップ・セキュリガンスP(Swelling Dip Securiganth P)に60℃で10分間浸漬し、次に、酸化剤としてアトテックジャパン社製のコンセントレート・コンパクト CPに80℃で15分間浸漬し、最後に中和液として、アトテックジャパン社製のリダクションソリューシン・セキュリガントPに40℃で5分間浸漬した。その後80℃で30分間乾燥した。
粗化処理された、密着性評価用基板T2を、それぞれPdCl2を含む無電解メッキ用溶液に浸漬し、次に無電解銅めっき液に浸漬した。150℃にて30分間加熱してめっきシード層のアニール処理を行い、無電解めっき層を形成した。
無電解めっき層を形成した、密着性評価用基板T2を、下記表に示す温度、時間の条件(T3)で加熱処理を行った後室温まで冷却し、密着性評価用基板T3を得た。
密着性評価用基板T3を、下記表に示す温度、時間の条件(T4)で加熱処理を行った後室温まで冷却し、密着性評価用サンプルを得た。
密着性評価用サンプルの製造において、
1)工程(A)及び工程(B)を下記の反り挙動評価用サンプルの製造における工程(A)及び工程(B)に変え、
2)工程(E)を行わなかった。
以上の事項以外は密着性評価用サンプルの製造と同様にして反り挙動評価用サンプルを製造した。
樹脂組成物1を、支持体であるPETフィルム(厚さ38μm)上に、乾燥後の厚さが35μmになるよう、ダイコーターにて均一に塗布し、80~120℃(平均100℃)で5分間乾燥させて、PETフィルムおよび樹脂組成物層から構成される絶縁樹脂フィルムを得た。
実施例1において、樹脂組成物1を、樹脂組成物2に変え、さらに条件T1~T4を変えた。以上の事項以外は実施例1と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例1において、樹脂組成物1を、樹脂組成物3に変え、さらに条件T1~T4を変えた。以上の事項以外は実施例1と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例1において、工程(D)を行わなかった。以上の事項以外は実施例1と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例2において、工程(D)を行わなかった。以上の事項以外は実施例2と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例3において、工程(D)を行わなかった。以上の事項以外は実施例3と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例2において、工程(D)を行わなわず、さらに条件T3及びT4を変えた。以上の事項以外は実施例2と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例1において、工程(G)を行わなかった。以上の事項以外は実施例1と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例2において、工程(G)を行わなかった。以上の事項以外は実施例2と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例3において、工程(G)を行わなかった。以上の事項以外は実施例3と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例1において、工程(F)及び工程(G)を行わなかった。以上の事項以外は実施例1と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例2において、工程(F)及び工程(G)を行わなかった。以上の事項以外は実施例2と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
実施例3において、工程(F)及び工程(G)を行わなかった。以上の事項以外は実施例3と同様にして密着性評価用サンプル及び反り挙動評価用サンプルを製造した。
各実施例及び各比較例で作製した密着性評価用のサンプルを加速試験(130℃、85%RH、100時間)後、FIB(集束イオンビーム)を用いて、密着性評価用のサンプルをビアホールの直径を含む断面で削り出した。削り出した断面を電子顕微鏡によって観察し層間剥離の発生エリアを以下の基準で評価することで密着性を評価した。
〇:層間剥離の長さが5μm未満
△:層間剥離の長さが5μm以上10μm未満
×:層間剥離の長さが10μm以上
各実施例及び各比較例で作製した反り挙動評価用サンプルを、シャドウモアレ装置(Akrometrix社製TherMoire AXP)を用いて、反り挙動を測定し、以下の基準で評価した。
〇:反り挙動が3.5mm以下
△:反り挙動が3.5mmを超え7mm未満
×:反り挙動が7mm以上
Claims (7)
- (A)支持体と、該支持体上に設けられた、樹脂組成物で形成された樹脂組成物層とを含む絶縁樹脂フィルムを準備する工程、
(B)内層基板上に、樹脂組成物層が内層基板と接合するように絶縁樹脂フィルムを積層する工程、
(C)樹脂組成物層を熱硬化させ、絶縁層を形成する工程、
(E)絶縁層にビアを形成し、さらに絶縁層上に導体層を形成する工程、
(F)絶縁層を175℃以上205℃以下の温度で加熱する工程、及び
(G)絶縁層を110℃以上175℃未満の温度で加熱する工程、をこの順で含み、
樹脂組成物が、エポキシ樹脂、硬化剤、及び無機充填材を含み、
無機充填材の含有量が、樹脂組成物の不揮発成分を100質量%としたとき、40質量%以上80質量%以下であり、
工程(F)での加熱温度をT3(℃)とし、工程(G)での加熱温度をT4(℃)としたとき、20℃≦T3-T4≦70℃を満たす、回路基板の製造方法。 - 工程(C)の後、工程(E)の前に、
(D)絶縁層を加熱する工程、を含む、請求項1に記載の回路基板の製造方法。 - 工程(D)の加熱温度T2が、100℃以上150℃以下である、請求項2に記載の回路基板の製造方法。
- 工程(F)の後、工程(G)の前に、
(F-1)絶縁層を冷却する工程、をさらに含む、請求項1~3のいずれか1項に記載の回路基板の製造方法。 - 工程(F)の加熱時間が、10分間以上である、請求項1~4のいずれか1項に記載の回路基板の製造方法。
- 工程(G)の加熱時間が、10分間以上である、請求項1~5のいずれか1項に記載の回路基板の製造方法。
- 工程(C)の加熱温度T1が、100℃以上190℃以下である、請求項1~6のいずれか1項に記載の回路基板の製造方法。
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