JP7302338B2 - Plasma processing equipment - Google Patents

Description

The present invention relates to a plasma processing apparatus for processing an object using plasma.

2. Description of the Related Art A conventional plasma processing apparatus applies a high-frequency current to an antenna, generates an inductively coupled plasma (abbreviated as ICP) by an induced electric field, and uses this inductively coupled plasma to process an object to be processed such as a substrate. proposed by. As such a plasma processing apparatus, in Patent Document 1, an antenna is arranged outside a vacuum vessel, and a high-frequency magnetic field generated from the antenna is transmitted into the vacuum vessel through a dielectric window provided on the side wall of the vacuum vessel. , disclose generating a plasma in a process chamber.

JP 2018-139256 A

By the way, in the plasma processing apparatus in which the above-described antenna is arranged outside the vacuum chamber, if the plasma density distribution along the surface direction of the substrate in the processing chamber is largely unbalanced, for example, when sputtering or the like is performed, a uniform thickness is not obtained. It becomes difficult to fabricate a film having on a substrate. Therefore, in such a plasma processing apparatus, it is required to reduce the unevenness of the intensity distribution of the high-frequency magnetic field supplied to the processing chamber and to reduce the plasma density distribution generated in the processing chamber.

SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and it is an object of the present invention to provide a plasma processing apparatus in which an antenna is arranged outside the processing chamber, and which can reduce the uneven distribution of the plasma density generated in the processing chamber. This is the main issue.

That is, a plasma processing apparatus according to the present invention performs vacuum processing on an object to be processed placed in a processing chamber using plasma, and includes a container body forming the processing chamber and a main body provided outside the processing chamber. an antenna connected to a high-frequency power supply to generate a high-frequency magnetic field; a magnetic field transmission window provided in the container body so as to face the antenna and transmitting the high-frequency magnetic field generated from the antenna into the processing chamber; and an inclination adjustment mechanism for adjusting the inclination of the antenna with respect to the transmission window.

In the case of generating a high-frequency magnetic field by applying high-frequency power to an antenna, the potential changes along the longitudinal direction of the antenna. tend to be biased.
By providing the above configuration, the present invention can adjust the inclination of the antenna with respect to the magnetic field permeable window. By bringing one end of an antenna that generates a high-frequency magnetic field close to the magnetic field transmission window, it is possible to reduce unevenness in the strength of the high-frequency magnetic field supplied into the processing chamber and reduce unevenness in the plasma density distribution generated in the processing chamber. can.

Preferably, in the plasma processing apparatus, the tilt adjustment mechanism can adjust the distance between the antenna and the magnetic field transmission window.
With such a configuration, since the distance between the antenna and the magnetic field transmission window can be adjusted, the strength of the high-frequency magnetic field supplied into the processing chamber can be set within an appropriate range according to the type and specifications of the vacuum processing. can.

As a specific aspect of the plasma processing apparatus, a portion of the antenna facing the magnetic field transmitting window may be linear. As a more specific aspect, the antenna includes a plurality of conductor elements electrically connected in series.

When the antenna includes a plurality of conductor elements connected in series, the plasma processing apparatus is preferably configured such that the tilt adjustment mechanism individually adjusts tilts of the plurality of conductor elements.
With such a configuration, the inclinations of the plurality of conductor elements forming the antenna can be individually adjusted, so that the distance between the antenna and the magnetic field permeable window can be finely adjusted along the longitudinal direction of the antenna. As a result, the unevenness of the strength of the high-frequency magnetic field supplied into the processing chamber along the longitudinal direction of the antenna can be further reduced, and the unevenness of the plasma density distribution generated within the processing chamber can be further reduced.

Further, when the antenna includes a plurality of conductor elements, the plasma processing apparatus is preferably configured so that the tilt adjustment mechanism simultaneously adjusts the tilts of two adjacent conductor elements.
With such a configuration, the inclinations of the two conductor elements can be adjusted simultaneously (that is, all at once) in one operation, so that the labor required for adjusting the inclinations can be reduced.

In the plasma processing apparatus, the magnetic field transmission window is formed by a window member provided to close an opening formed in a wall of the container body, and the window member is provided to close the opening. , a metal plate formed with a slit penetrating in a thickness direction, and a dielectric plate supported in contact with the metal plate and closing the slit from the outside of the processing chamber. .

With such a configuration, the slit formed in the metal plate and the dielectric plate placed thereon form a magnetic field transmission window for transmitting the high frequency magnetic field generated from the antenna to the processing chamber side. can. As a result, since a part of the member forming the magnetic field permeable window is made of a metal material such as ceramics, which has greater toughness than the dielectric material, the magnetic field can be reduced compared to the case where the magnetic field permeable window is formed only of the dielectric material. The thickness of the transmission window can be reduced. In addition, since the dielectric plate is supported in contact with the metal plate, deformation of the dielectric plate during vacuum processing can be reduced, and bending stress generated in the dielectric plate can be reduced. Therefore, the thickness of the dielectric plate itself can be reduced. As a result, the distance from the antenna to the processing chamber can be shortened, and the high-frequency magnetic field generated from the antenna can be efficiently supplied into the processing chamber.

According to the present invention, it is possible to provide a plasma processing apparatus in which the antenna is arranged outside the processing chamber, and which can reduce the bias of the plasma density distribution generated in the processing chamber.

FIG. 2 is a cross-sectional view orthogonal to the longitudinal direction of the antenna schematically showing the overall configuration of the plasma processing apparatus of this embodiment. FIG. 3 is a cross-sectional view along the longitudinal direction of the antenna, schematically showing the configuration of the tilt adjustment mechanism of the plasma processing apparatus of the same embodiment. FIG. 4 is a plan view viewed from the antenna side schematically showing the configuration of the tilt adjustment mechanism of the plasma processing apparatus of the same embodiment. Sectional drawing which shows typically the structure of the raising/lowering mechanism of the plasma processing apparatus of the same embodiment. FIG. 4 is a cross-sectional view schematically showing the inclination adjustment operation of the antenna of the plasma processing apparatus of the same embodiment; FIG. 5 is a cross-sectional view along the longitudinal direction of an antenna schematically showing the configuration of an inclination adjusting mechanism of a plasma processing apparatus according to another embodiment; FIG. 5 is a plan view viewed from the antenna side schematically showing the configuration of an inclination adjusting mechanism of a plasma processing apparatus according to another embodiment; FIG. 5 is a plan view viewed from the antenna side schematically showing the configuration of an inclination adjusting mechanism of a plasma processing apparatus according to another embodiment;

A plasma processing apparatus according to one embodiment of the present invention will be described below with reference to the drawings. The plasma processing apparatus described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following unless there is a specific description. Moreover, the content described in one embodiment can also be applied to other embodiments. Also, the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation.

<Device configuration>
The plasma processing apparatus 100 according to the present embodiment uses inductively coupled plasma P to perform vacuum processing on an object W to be processed such as a substrate. Here, the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like. The processing applied to the substrate includes, for example, film formation by plasma CVD, etching, ashing, sputtering, and the like. The plasma processing apparatus 100 of the present embodiment is a plasma CVD apparatus for film formation by plasma CVD, a plasma etching apparatus for etching, a plasma ashing apparatus for ashing, and a plasma for sputtering. Also called a sputtering device.

More specifically, the plasma processing apparatus 100 includes, as shown in FIG. 3 and a high frequency power source 4 for applying high frequency to the antenna 3 . A magnetic field transmission window 5 is formed in the vacuum vessel 2 for transmitting a high frequency magnetic field generated from the antenna 3 into the processing chamber 1 . When high-frequency power is applied to the antenna 3 from the high-frequency power source 4, the high-frequency magnetic field generated by the antenna 3 passes through the magnetic field transmission window 5 and is supplied into the processing chamber 1, thereby generating an induced electric field in the space within the processing chamber 1. Then, an inductively coupled plasma P is generated. Each part will be described below.

The vacuum vessel 2 includes a vessel body 21 and a window member 22 forming the magnetic field transmission window 5 .

The container main body 21 is, for example, a metal container, and the processing chamber 1 is formed inside by the wall (inner wall) thereof. An opening 211 is formed through the wall of the container body 21 (here, the upper wall 21a) in the thickness direction. The window member 22 is detachably attached to the container body 21 so as to close the opening 211 . The container body 21 is electrically grounded, and the space between the container body 21 and the window member 22 is vacuum-sealed by a gasket such as an O-ring or an adhesive.

As shown in FIGS. 2 and 3, the window member 22 includes a metal plate 221 and a dielectric plate 222 which are provided in order from the processing chamber 1 side toward the antenna 3 side. A plurality of slits 221 s are formed through the metal plate 221 in its thickness direction, and are provided so as to close the opening 211 of the container body 21 . The dielectric plate 222 is supported in contact with the metal plate 221, and is provided on the surface of the metal plate 221 on the antenna 3 side so as to close the slit 221s from the outside of the processing chamber 1 (that is, from the antenna 3 side). . In this embodiment, the magnetic field transmission window 5 is formed by the slit 221s of the metal plate 221 and the dielectric plate 222 closing the slit 221s. That is, the high-frequency magnetic field generated by the antenna 3 is supplied to the processing chamber 1 through the dielectric plate 222 and the slit 221s. The vacuum in the processing chamber 1 is maintained by the metal plate 221 closing the opening 211 and the dielectric plate 222 closing the slit 221s of the metal plate 221 .

Here, each slit 221 s has a strip-like shape whose longitudinal direction is perpendicular to the antenna 3 when viewed from above. formed in parallel. The number and direction of each slit 221s may be changed as appropriate.

The material forming the metal plate 221 is, for example, one kind of metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co, or one of them. may be an alloy (for example, a stainless alloy, an aluminum alloy, etc.).

Materials constituting the dielectric plate 222 are known materials such as ceramics such as alumina, silicon carbide, and silicon nitride, inorganic materials such as quartz glass and alkali-free glass, and resin materials such as fluorine resin (eg, Teflon). good.

The vacuum vessel 2 is configured such that the processing chamber 1 is evacuated by the evacuation device 6 . The vacuum container 2 is configured such that the gas G is introduced into the processing chamber 1 via, for example, a flow rate regulator (not shown) and a plurality of gas introduction ports 212 provided in the container body 21 . The gas G may be selected according to the content of the processing to be performed on the substrate W. FIG. For example, when forming a film on a substrate by plasma CVD, the gas G is a raw material gas or a gas obtained by diluting it with a diluent gas (eg, H ₂ ). More specifically, when the source gas is SiH ₄ , the Si film is formed, when the source gas is SiH ₄ +NH ₃ , the SiN film is formed, when SiH ₄ +O ₂ is the SiO ₂ film, and when SiF ₄ +N ₂ is the SiN film. : F film (fluorinated silicon nitride film) can be formed on each substrate.

A substrate holder 7 for holding the substrate W is provided inside the vacuum vessel 2 . A bias voltage may be applied to the substrate holder 7 from the bias power source 8 as in this example. The bias voltage is, for example, a negative DC voltage or the like, but is not limited to this. With such a bias voltage, for example, the energy of positive ions in the plasma P when they impinge on the substrate W can be controlled, and the crystallinity of the film formed on the surface of the substrate W can be controlled. . A heater 71 for heating the substrate W may be provided in the substrate holder 7 .

As shown in FIG. 3, the plasma processing apparatus 100 includes a plurality of (here, two) antennas 3 electrically connected in parallel. It is arranged outside the processing chamber 1 . Each antenna 3 is arranged such that its longitudinal direction is parallel to each other and substantially parallel to the surface of the substrate W provided in the processing chamber 1 .

Each antenna 3 has the same structure, and the portion facing the magnetic field transmission window 5 forms a straight line. A feeding end 3a, which is one end of the antenna 3, is connected to the high-frequency power source 4 via a matching circuit 41, and the terminal 3b, which is the other end, is directly grounded. Note that the terminal portion 3b may be grounded through a capacitor, a coil, or the like.

Here, each antenna 3 has a hollow structure in which a flow path through which cooling liquid (not shown) can flow is formed. Specifically, as shown in FIGS. 2 and 3, each antenna 3 includes at least two conductor elements 31 electrically connected in series and capacitive elements electrically connected in series with adjacent conductor elements 31. and a capacitor 32 which is Each antenna 3 here comprises two conductor elements 31 and a capacitor 32 arranged therebetween. Each conductor element 31 is U-shaped in appearance, and has the same shape in which the portion facing the magnetic field permeable window 5 forms a straight line. Each conductor element 31 is formed with a channel through which a cooling liquid flows. The material of each conductor element 31 is, for example, copper, aluminum, an alloy thereof, or a metal such as stainless steel, but the material is not limited to this and may be changed as appropriate.

By configuring each antenna 3 in this way, the combined reactance of the antenna 3 is simply the inductive reactance minus the capacitive reactance, so the impedance of the antenna 3 can be reduced. As a result, even when the antenna 3 is lengthened, an increase in its impedance can be suppressed, a high frequency current can easily flow through the antenna 3, and an inductively coupled plasma P can be efficiently generated in the processing chamber 1.

A high-frequency power supply 4 applies high-frequency power to each antenna 3 via a matching circuit 41 . As a result, a high-frequency current flows through each antenna 3, an induced electric field is generated in the processing chamber 1, and an inductively coupled plasma P is generated. The frequency of the high frequency is preferably, for example, 13.56 MHz to 100 MHz, but is not limited to this.

2 and 3, the plasma processing apparatus 100 of the present embodiment is arranged such that the antenna 3 is positioned relative to the magnetic field transmission window 5 so that the density distribution of the plasma P generated in the processing chamber 1 can be finely adjusted. A tilt adjustment mechanism 9 is provided to adjust the tilt. Here, the "tilt of the antenna 3 with respect to the magnetic field permeable window 5" means the ratio of the amount of change in the distance between the magnetic field permeable window 5 and the antenna 3 to the amount of change in the distance along the longitudinal direction of the antenna 3, for example.

The tilt adjustment mechanism 9 has a plurality of lifting mechanisms 91 provided to hold at least both ends of each antenna 3 . The elevating mechanism 91 is attached to the upper surface 21b of the container body 21, holds the end of the antenna 3, and elevates it in the vertical direction (perpendicular to the surface of the substrate W to be processed). The tilt adjustment mechanism 9 raises and lowers both ends of the antennas 3 by means of lifting mechanisms 91 provided at both ends of each antenna 3 , thereby adjusting the tilt of each antenna 3 with respect to the magnetic field transmission window 5 and further adjusting the magnetic field of each antenna 3 . The distance from the transmissive window 5 can be adjusted. Here, the “end portion of the antenna 3” means a portion outside the portion of the antenna 3 facing the magnetic field transmission window 5 .

Here, the configuration of one elevating mechanism 91 will be described. Specifically, as shown in FIG. 4, the lifting mechanism 91 has a gripping portion 911 that grips the antenna 3, and a lifting portion 912 that vertically moves the gripping portion 911 up and down.

The gripping portion 911 holds the side peripheral surface of the antenna 3 by sandwiching it, and is specifically configured by a clamping member 913 . At least a portion of the clamp member 913 that contacts the antenna 3 is made of a highly insulating material.

The lifting section 912 has a guide section 912a that guides the gripping section 911 so that it can be vertically moved vertically, and a driving section 912b that applies a driving force to the gripping section 911 in the vertical direction.

Specifically, the guide portion 912a is provided to extend straight upward in the vertical direction from a substantially plate-shaped base member 914 attached to the upper surface 21b of the container main body 21 and the upper surface 914a of the base member 914. It includes one or a plurality of guide shafts 915 and a through hole 913? formed from the upper surface 913a of the clamp member 913 to the lower surface 913b. The clamp member 913 is arranged such that the guide shaft 915 is inserted through the through hole 913 о of the clamp member 913 , so that the gripping portion 911 can be vertically moved straight up and down along the guide shaft 915 .

The driving portion 912b specifically includes a bolt member 917 having a thread groove formed in a body portion 917a.

The bolt member 917 is erected on the upper surface 914a of the base member 914 so that its axial direction is parallel to the vertical direction. A tip portion of the bolt member 917 is rotatably attached to an upper surface 914 a of the base member 914 . The clamp member 913 is formed with a through hole extending from the upper surface 913a to the lower surface 913b and having a screw groove on the peripheral surface thereof. is provided. When the bolt member 917 is rotated around its axis, it is changed into thrust force on the clamp member 913 in the axial direction, so that the clamp member 913 can be advanced and retracted along the axial direction.

When the bolt member 917 is rotated in one direction around the axis, a thrust is generated to move the clamp member 913 downward, thereby moving the gripping portion 911 downward. On the other hand, when the bolt member 917 is rotated in the opposite direction around the axis, a thrust is generated to move the clamp member 913 upward, thereby moving the gripping portion 911 upward. By simply rotating the bolt member 917 about its axis in this manner, the antenna 3 held by the holding portion 911 can be raised and lowered.

The lifting mechanism 91 includes an elastic member 916 that applies an upward force to the lower surface 913b of the clamp member 913 by elastic force. The elastic member 916 is specifically a compression coil spring, and is provided between the base member 914 and the clamp member 913 so that its direction of expansion and contraction is parallel to the axial direction of the bolt member 917 . The elastic member 916 has one end in contact with the upper surface 914 a of the base member 914 and the other end in contact with the lower surface 913 b of the clamp member 913 , and always exerts an upward force on the lower surface 913 b of the clamp member 913 . This prevents the clamp member 913 from rattling.

As shown in FIGS. 2 and 3 , the tilt adjusting mechanism 9 includes lifting mechanisms 91 having such a configuration at both ends of each conductor element 31 of the antenna 3 . Thereby, the inclination adjusting mechanism 9 can individually adjust the inclination of each conductor element 31 with respect to the magnetic field permeable window 5 by grasping both ends of each conductor element 31 and raising and lowering each conductor element 31 . In addition, this makes it possible to individually adjust the distance of each conductor element 31 from the magnetic field permeable window 5 .

Here, in the tilt adjusting mechanism 9 of the present embodiment, as shown in FIGS. 2 and 3, two elevating mechanisms 91 (that is, adjacent Two elevating mechanisms 91) for elevating the adjacent ends of the two conductor elements 31 are shared. Specifically, the two elevating mechanisms 91 share the bolt member 917 and the elastic member 916 that constitute the elevating section 912, and the one elevating section 912 can integrally elevate the respective gripping sections 911. is configured as 5, by rotating one bolt member 917, the tilt adjusting mechanism 9 simultaneously (or all at once) raises and lowers the adjacent ends of the two conductor elements 31 adjacent to each other. so that the inclination of these conductor elements 31 can be adjusted simultaneously.

<Effects of this embodiment>
According to the plasma processing apparatus 100 of this embodiment configured as described above, the tilt of the antenna 3 with respect to the magnetic field transmission window 5 can be adjusted. away from the magnetic field transmission window 5, or by bringing one end of the antenna 3, which generates a low-strength high-frequency magnetic field, closer to the magnetic field transmission window 5, to reduce the unevenness of the strength of the high-frequency magnetic field supplied into the processing chamber 1, The non-uniformity of the plasma density distribution generated in the processing chamber 1 can be reduced.
Especially in the plasma processing apparatus 100 of the present embodiment, since the inclination of the plurality of conductor elements 31 constituting the antenna 3 can be individually adjusted, the distance between the antenna 3 and the magnetic field transmission window 5 can be adjusted along the longitudinal direction of the antenna 3. It can be finely adjusted. As a result, the unevenness of the strength of the high-frequency magnetic field supplied into the processing chamber 1 along the longitudinal direction of the antenna 3 can be further reduced, and the unevenness of the plasma density distribution generated within the processing chamber 1 can be further reduced. can.

<Other Modified Embodiments>
It should be noted that the present invention is not limited to the above embodiments.

In the tilt adjusting mechanism 9 of the above-described embodiment, two elevating mechanisms 91 provided between two adjacent conductor elements 31 connected in series are shared. Although it is configured such that the end portions to be connected can be moved up and down at the same time, the present invention is not limited to this. As shown in FIGS. 6 and 7, the tilt adjusting mechanism 9 of another embodiment has two lifting mechanisms 91 provided between two adjacent conductor elements 31 connected in series independently of each other. , and the adjacent ends of these two conductor elements 31 can be individually raised and lowered so that the inclination of these two conductor elements 31 can be individually adjusted.

Moreover, although the inclination adjusting mechanism 9 of the above embodiment individually adjusts the inclination of each antenna 3 electrically connected in parallel, the present invention is not limited to this. The tilt adjusting mechanism 9 of another embodiment may simultaneously adjust the tilt of each antenna 3 electrically connected in parallel. In this case, as shown in FIG. 8, the tilt adjusting mechanism 9 has a common lifting mechanism 91 provided at the adjacent ends of two adjacent conductor elements 31 connected in parallel. Adjacent ends of two conductor elements 31 may be configured to be raised and lowered simultaneously.

Further, in the above-described embodiment, the lifting mechanism 91 is provided at both ends of the antenna 3, but the present invention is not limited to this. In another embodiment, the lifting mechanism 91 may be provided only at one end of the antenna 3, and the other end of the antenna 3 may be rotatably connected to the container body 21 by, for example, a hinge. Even in such a configuration, the inclination of the antenna 3 with respect to the magnetic field permeable window 5 can be adjusted by elevating one end of the antenna 3 by the elevating mechanism 91 .

In the lifting mechanism 91 of the above-described embodiment, the lifting portion 912 for lifting and lowering the grip portion 911 includes the bolt member 917, but the present invention is not limited to this. The lifting mechanism 91 may have any configuration as long as the gripping portion 911 that grips the antenna 3 can be lifted and lowered along the vertical direction. For example, the lifting section 912 does not have the bolt member 917, and is provided between the upper surface 21b of the container body 21 and the clamp member 913 to adjust the distance between the clamp member 913 and the upper surface 21b of the container body 21. It may be a variable spacer member or the like.

In the plasma processing apparatus 100 of the above-described embodiment, the magnetic field transmission window 5 is formed by the window member 22 including the metal plate 221 with the slit 221s and the dielectric plate 222, but it is not limited to this. In another embodiment, the magnetic field permeable window 5 may be composed of a dielectric member provided so as to close the opening 211 formed in the container body 21 .

Although each conductor element 31 of the antenna 3 is U-shaped in the above-described embodiment, it is not limited to this and may be straight tube-shaped.

Although the plasma processing apparatus 100 of the above embodiment has a plurality of antennas 3, the present invention is not limited to this and only one antenna 3 may be provided.

In the plasma processing apparatus 100 of the above embodiment, the antenna 3 has a plurality of conductor elements 31 and a capacitor 32 which is a capacitive element electrically connected in series with the conductor elements 31 adjacent to each other. is not limited to In other embodiments, the antenna 3 may comprise only one conductor element 31 and no capacitor 32 .

In addition, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications are possible without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 100...Plasma processing apparatus 1...Processing chamber 3...Antenna 4...High frequency power supply 5...Magnetic field transmission window 9...Inclination adjustment mechanism

Claims (7)

A plasma processing apparatus that vacuum-processes an object to be processed placed in a processing chamber using plasma,
a container body forming the processing chamber;
an antenna provided outside the processing chamber and connected to a high frequency power supply to generate a high frequency magnetic field;
a magnetic field transmission window provided in the container body so as to face the antenna and allowing a high frequency magnetic field generated from the antenna to pass through the processing chamber;
a tilt adjustment mechanism that adjusts the tilt of the antenna with respect to the magnetic field transmission window;
The antenna has a linear portion facing the magnetic field transmission window,
The plasma processing apparatus, wherein the inclination adjustment mechanism adjusts the inclination of the antenna by gripping both ends of the antenna outside a portion facing the magnetic field transmission window and lifting and lowering them in the vertical direction. 2. The plasma processing apparatus according to claim 1, wherein said tilt adjustment mechanism can adjust the distance between said antenna and said magnetic field transmission window. 3. The plasma processing apparatus according to claim 1 , wherein said antenna includes a plurality of conductor elements electrically connected in series. 4. The plasma processing apparatus according to claim 3 , wherein said tilt adjusting mechanism individually adjusts tilts of said plurality of conductor elements. 4. The plasma processing apparatus according to claim 3 , wherein said tilt adjusting mechanism simultaneously adjusts tilts of said two adjacent conductor elements. The magnetic field transmission window is formed by a window member provided to close an opening formed in the wall of the container body,
The window member
a metal plate provided to block the opening and having a slit penetrating in the thickness direction;
a dielectric plate supported in contact with the metal plate and blocking the slit from the outside of the processing chamber;
The plasma processing apparatus according to any one of claims 1 to 5 , comprising: A plasma processing apparatus that vacuum-processes an object to be processed placed in a processing chamber using plasma,
a container body forming the processing chamber;
an antenna provided outside the processing chamber and connected to a high frequency power supply to generate a high frequency magnetic field;
a magnetic field transmission window provided in the container body so as to face the antenna and allowing a high frequency magnetic field generated from the antenna to pass through the processing chamber;
a tilt adjustment mechanism that adjusts the tilt of the antenna with respect to the magnetic field transmission window;
with
wherein the antenna comprises a plurality of conductor elements electrically connected in series;
The plasma processing apparatus, wherein the tilt adjustment mechanism individually adjusts tilts of the plurality of conductor elements.

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