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JP7122154B2 - Components for semiconductor manufacturing equipment - Google Patents

Components for semiconductor manufacturing equipment Download PDF

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JP7122154B2
JP7122154B2 JP2018092745A JP2018092745A JP7122154B2 JP 7122154 B2 JP7122154 B2 JP 7122154B2 JP 2018092745 A JP2018092745 A JP 2018092745A JP 2018092745 A JP2018092745 A JP 2018092745A JP 7122154 B2 JP7122154 B2 JP 7122154B2
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terminal member
recess
side portion
heating device
semiconductor manufacturing
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JP2019201013A (en
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紘彰 毛利
貴史 七田
淳 土田
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Description

本明細書に開示される技術は、半導体製造装置用部品に関する。 The technology disclosed in this specification relates to parts for semiconductor manufacturing equipment.

例えば成膜装置(CVD成膜装置やスパッタリング成膜装置等)やエッチング装置(プラズマエッチング装置等)といった半導体製造装置を構成する半導体製造装置用部品として、対象物(例えば、半導体ウェハ)を保持しつつ所定の処理温度に加熱する加熱装置(「サセプタ」とも呼ばれる)が知られている。 For example, it holds an object (for example, a semiconductor wafer) as a part of a semiconductor manufacturing apparatus that constitutes a semiconductor manufacturing apparatus such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.). A heating device (also called a "susceptor") is known for heating to a predetermined processing temperature while heating.

一般に、加熱装置は、セラミックスにより形成された保持部材を備える。保持部材は、例えば、一の表面(以下、「保持面」という)と、保持面とは反対側の表面(以下、「裏面」という)とを有する板状部材である。保持部材には、抵抗発熱体と、抵抗発熱体に電気的に接続された受電電極とが配置されている。受電電極は、保持部材の裏面に形成された凹部の底面に露出しており、少なくとも一部分が凹部内に収容された金属製の端子部材と、ろう付けにより接合されている。電源から端子部材および受電電極を介して抵抗発熱体に電圧が印加されると、抵抗発熱体が発熱し、これにより、保持部材の保持面上に保持された対象物(例えば、半導体ウェハ)が加熱される。 Generally, the heating device has a holding member made of ceramics. The holding member is, for example, a plate member having one surface (hereinafter referred to as "holding surface") and a surface opposite to the holding surface (hereinafter referred to as "back surface"). A resistance heating element and a power receiving electrode electrically connected to the resistance heating element are arranged on the holding member. The power receiving electrode is exposed on the bottom surface of the recess formed in the back surface of the holding member, and is joined by brazing to a metal terminal member at least partially accommodated in the recess. When a voltage is applied to the resistance heating element from the power source via the terminal member and the power receiving electrode, the resistance heating element generates heat, thereby heating the object (for example, semiconductor wafer) held on the holding surface of the holding member. heated.

従来、端子部材と受電電極とを接合するろう付け部における残留応力を低減して、該残留応力に起因する保持部材のクラックの発生を抑制するために、端子部材における受電電極側の部分の径を細くする技術が知られている(例えば、特許文献1参照)。 Conventionally, in order to reduce the residual stress in the brazed portion that joins the terminal member and the power receiving electrode and suppress the occurrence of cracks in the holding member due to the residual stress, the diameter of the portion of the terminal member on the power receiving electrode side is known (see Patent Document 1, for example).

特開平9-235166号公報JP-A-9-235166

しかしながら、上記従来の技術では、ろう付け部における残留応力の低減が十分ではなく、該残留応力に起因する保持部材のクラックの発生を効果的に抑制することができない、という課題がある。 However, the conventional technique described above does not sufficiently reduce the residual stress in the brazed portion, and there is a problem that it is not possible to effectively suppress the occurrence of cracks in the holding member due to the residual stress.

なお、このような課題は、上述した構成の加熱装置に限らず、凹部が形成されたセラミックス部材と、該凹部の底面に露出した電極と、該凹部内に収容された柱状の第1の部分を有する金属製の端子部材と、上記電極と上記端子部材の第1の部分とを接合するろう付け部とを備える半導体製造装置用部品に共通の課題である。 Note that such a problem is not limited to the heating device having the above-described structure, and the ceramic member having the concave portion, the electrode exposed on the bottom surface of the concave portion, and the columnar first portion accommodated in the concave portion. and a brazing portion for joining the electrode and the first portion of the terminal member.

本明細書では、上述した課題を解決することが可能な技術を開示する。 This specification discloses a technology capable of solving the above-described problems.

本明細書に開示される技術は、例えば、以下の形態として実現することが可能である。 The technology disclosed in this specification can be implemented, for example, in the following forms.

(1)本明細書に開示される半導体製造装置用部品は、凹部が形成されたセラミックス部材と、前記凹部の底面に露出した電極と、金属製の端子部材であって、前記凹部内に収容された柱状の第1の部分を有する、端子部材と、前記電極と前記端子部材の前記第1の部分とを接合するろう付け部と、を備える半導体製造装置用部品において、前記端子部材の前記第1の部分の中心軸を含む断面において、前記第1の部分の外周面に、前記中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されている。本半導体製造装置用部品では、端子部材の第1の部分の中心軸を含む断面において、第1の部分の外周面に、中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されているため、端子部材の第1の部分の表面積が比較的大きくなる。すなわち、端子部材の第1の部分の外周面が、比較的多くのろう材を保持する(収容する)ことができる。そのため、端子部材と電極とのろう付け接合の際に、十分な接合強度を確保するために過剰に供給されたろう材が、端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、その結果、ろう付け部のフィレットが適正な形状となって、ろう付け部における残留応力が比較小さくなる。従って、本半導体製造装置用部品によれば、端子部材と電極との間の接合強度が低下することを抑制しつつ、ろう付け部における残留応力を効果的に低減することができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを効果的に抑制することができる。また、本半導体製造装置用部品によれば、端子部材の第1の部分の表面積を比較的大きくすることができるため、過剰なろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して(這い上がって)両者が接合されることを抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを抑制することができる。 (1) A component for a semiconductor manufacturing apparatus disclosed in the present specification includes a ceramic member having a recess, an electrode exposed on the bottom surface of the recess, and a terminal member made of metal, which are accommodated in the recess. A component for a semiconductor manufacturing apparatus, comprising: a terminal member having a columnar first portion with a slanted column; and a brazing portion that joins the electrode and the first portion of the terminal member, wherein the In a cross section including the central axis of the first portion, a plurality of convex portions and a plurality of concave portions are formed alternately along the central axis direction on the outer peripheral surface of the first portion. In this component for a semiconductor manufacturing apparatus, in a cross section including the central axis of the first portion of the terminal member, the outer peripheral surface of the first portion has a plurality of protrusions and a plurality of recesses that are alternately arranged along the direction of the central axis. As such, the surface area of the first portion of the terminal member is relatively large. That is, the outer peripheral surface of the first portion of the terminal member can hold (accommodate) a relatively large amount of brazing material. Therefore, when the terminal member and the electrode are brazed, excessively supplied brazing material to ensure sufficient joint strength is prevented from moving a relatively long distance along the outer peripheral surface of the terminal member. As a result, the fillet of the braze has a proper shape and the residual stress in the braze is relatively small. Therefore, according to the present component for a semiconductor manufacturing apparatus, it is possible to effectively reduce the residual stress in the brazed portion while suppressing a decrease in the bonding strength between the terminal member and the electrode. It is possible to effectively suppress the occurrence of cracks in the ceramic member due to the residual stress in. Further, according to the component for a semiconductor manufacturing apparatus, since the surface area of the first portion of the terminal member can be made relatively large, the excess brazing material will not fill the gap between the side surface of the concave portion of the ceramic member and the terminal member. It is possible to suppress the cracks from entering (climbing up) and joining the two together, thereby suppressing the occurrence of cracks due to the difference in thermal expansion between the ceramic member and the terminal member.

(2)上記半導体製造装置用部品において、前記端子部材の前記第1の部分は、柱状の開口側部分と、前記開口側部分に対して前記凹部の底面側に位置し、前記開口側部分より径の小さい柱状の底面側部分と、を有し、前記端子部材の前記第1の部分の中心軸を含む前記断面において、前記複数の凸部および複数の凹部は、前記第1の部分の前記底面側部分の外周面に形成されている構成としてもよい。本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第1の部分との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部のフィレットを適正な形状とすることができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを効果的に抑制することができる。また、本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第1の部分との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して両者が接合されることを効果的に抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを効果的に抑制することができる。 (2) In the above component for a semiconductor manufacturing apparatus, the first portion of the terminal member includes a columnar opening side portion and a bottom surface side of the recess with respect to the opening side portion. and a columnar bottom side portion with a small diameter, and in the cross section including the central axis of the first portion of the terminal member, the plurality of projections and the plurality of recesses It is good also as a structure formed in the outer peripheral surface of a bottom face side part. According to this component for a semiconductor manufacturing apparatus, a large space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member. The brazing material can be prevented from moving a relatively long distance along the outer peripheral surface of the terminal member, the fillet of the brazing portion can be formed into an appropriate shape, and the residual stress in the brazing portion can be reduced. Therefore, it is possible to effectively suppress the occurrence of cracks in the ceramic member. In addition, according to the semiconductor manufacturing apparatus component, since a large space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, the brazing material is not significantly excessive. Also, it is possible to effectively prevent the brazing filler metal from entering the gap between the side surface of the recess of the ceramic member and the terminal member and to join the two together. It is possible to effectively suppress the occurrence of cracks due to the difference.

(3)上記半導体製造装置用部品において、前記端子部材の前記第1の部分は、前記開口側部分と前記底面側部分との間に位置し、前記底面側部分の最小径より径の小さい柱状の中間部分を有する構成としてもよい。本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第1の部分との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部のフィレットを適正な形状とすることができ、ろう付け部における残留応力に起因してセラミックス部材にクラックが発生することを極めて効果的に抑制することができる。また、本半導体製造装置用部品によれば、セラミックス部材に形成された凹部の側面と端子部材の第1の部分との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材がセラミックス部材の凹部の側面と端子部材との間の隙間に進入して両者が接合されることを極めて効果的に抑制することができ、セラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを極めて効果的に抑制することができる。 (3) In the above component for a semiconductor manufacturing apparatus, the first portion of the terminal member is located between the opening side portion and the bottom side portion, and has a columnar shape with a diameter smaller than the minimum diameter of the bottom side portion. It is good also as a structure which has an intermediate part. According to this semiconductor manufacturing device component, a larger space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member. , the brazing material can be prevented from moving a relatively long distance along the outer peripheral surface of the terminal member, the fillet of the brazing portion can be properly shaped, and the residual stress in the brazing portion can be reduced. As a result, it is possible to extremely effectively suppress the occurrence of cracks in the ceramic member. Further, according to the present component for a semiconductor manufacturing apparatus, since a larger space is secured between the side surface of the recess formed in the ceramic member and the first portion of the terminal member, the brazing material is significantly excessive. Even so, it is possible to extremely effectively suppress the brazing material from entering the gap between the side surface of the recess of the ceramic member and the terminal member and joining them together. It is possible to extremely effectively suppress the occurrence of cracks due to the difference in thermal expansion.

(4)上記半導体製造装置用部品において、前記端子部材の前記第1の部分の中心軸を含む断面において、前記第1の部分の外周面に形成された少なくとも1つの前記凹部内に、前記ろう付け部の一部分が収容されている、ことを特徴とする構成としてもよい。本半導体製造装置用部品によれば、ろう材が不足して端子部材と電極との間の接合強度が低下することを抑制しつつ、ろう付け部における残留応力やセラミックス部材と端子部材との間の熱膨張差に起因してクラックが発生することを抑制することができる。 (4) In the semiconductor manufacturing apparatus component described above, in a cross section including the central axis of the first portion of the terminal member, at least one of the recesses formed in the outer peripheral surface of the first portion contains the solder. A configuration may be employed in which a portion of the attachment portion is accommodated. According to this component for semiconductor manufacturing equipment, it is possible to suppress the reduction in the bonding strength between the terminal member and the electrode due to the shortage of the brazing material, while suppressing the residual stress in the brazed portion and the relationship between the ceramic member and the terminal member. It is possible to suppress the occurrence of cracks due to the difference in thermal expansion between the

なお、本明細書に開示される技術は、種々の形態で実現することが可能であり、例えば、半導体製造装置用部品、加熱装置、保持装置、それらの製造方法等の形態で実現することが可能である。 The technology disclosed in this specification can be implemented in various forms, for example, it can be implemented in the form of parts for semiconductor manufacturing equipment, heating devices, holding devices, manufacturing methods thereof, and the like. It is possible.

第1実施形態における加熱装置100の外観構成を概略的に示す斜視図である。1 is a perspective view schematically showing an external configuration of a heating device 100 according to a first embodiment; FIG. 第1実施形態における加熱装置100のXZ断面構成を概略的に示す説明図である。It is an explanatory view showing roughly the XZ section composition of heating device 100 in a 1st embodiment. 図2のX1部における加熱装置100のXZ断面構成を拡大して示す説明図である。FIG. 3 is an explanatory diagram showing an enlarged XZ cross-sectional configuration of the heating device 100 in the X1 section of FIG. 2 ; 本実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の構成を示す説明図である。FIG. 4 is an explanatory view showing the configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the present embodiment; 比較例の加熱装置100における端子部材70と受電電極53との接合箇所付近の構成を示す説明図である。FIG. 10 is an explanatory view showing the configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the comparative example; 第2実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。FIG. 11 is an explanatory view showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the second embodiment; 第3実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。FIG. 11 is an explanatory view showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the third embodiment; 第4実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。FIG. 11 is an explanatory view showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the fourth embodiment;

A.第1実施形態:
A-1.加熱装置100の構成:
図1は、第1実施形態における加熱装置100の外観構成を概略的に示す斜視図であり、図2は、第1実施形態における加熱装置100のXZ断面構成を概略的に示す説明図であり、図3は、図2のX1部における加熱装置100のXZ断面構成を拡大して示す説明図である。各図には、方向を特定するための互いに直交するXYZ軸が示されている。本明細書では、便宜的に、Z軸正方向を上方向といい、Z軸負方向を下方向というものとするが、加熱装置100は実際にはそのような向きとは異なる向きで設置されてもよい。他の図についても同様である。
A. First embodiment:
A-1. Configuration of heating device 100:
FIG. 1 is a perspective view schematically showing the external configuration of the heating device 100 according to the first embodiment, and FIG. 2 is an explanatory view schematically showing the XZ sectional configuration of the heating device 100 according to the first embodiment. 3 is an explanatory view showing an enlarged XZ cross-sectional configuration of the heating device 100 in the X1 section of FIG. Each drawing shows mutually orthogonal XYZ axes for specifying directions. In this specification, for the sake of convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. may The same applies to other figures.

加熱装置100は、対象物(例えば、半導体ウェハW)を保持しつつ所定の処理温度(例えば、400~800℃程度)に加熱する装置であり、サセプタとも呼ばれる。加熱装置100は、例えば、成膜装置(CVD成膜装置やスパッタリング成膜装置等)やエッチング装置(プラズマエッチング装置等)といった半導体製造装置を構成する半導体製造装用部品として使用される。 The heating device 100 is a device that holds an object (eg, a semiconductor wafer W) and heats it to a predetermined processing temperature (eg, about 400 to 800° C.), and is also called a susceptor. The heating apparatus 100 is used, for example, as a component for semiconductor manufacturing that constitutes a semiconductor manufacturing apparatus such as a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.).

図1および図2に示すように、加熱装置100は、保持部材10と支持部材20とを備える。 As shown in FIGS. 1 and 2, the heating device 100 includes a holding member 10 and a support member 20. As shown in FIGS.

保持部材10は、Z軸方向(上下方向)に略直交する一の表面(以下、「保持面」という)S1と、保持面S1とは反対側の表面(以下、「裏面」という)S2とを有する略円板状の部材である。保持部材10は、例えばAlN(窒化アルミニウム)やAl(アルミナ)を主成分とするセラミックスにより構成されている。なお、本明細書では、主成分とは、含有割合(重量割合)の最も多い成分を意味する。保持部材10の直径は、例えば100mm以上、500mm以下程度であり、保持部材10の厚さ(Z軸方向における寸法)は、例えば3mm以上、30mm以下程度である。保持部材10は、特許請求の範囲におけるセラミックス部材に相当する。 The holding member 10 has one surface (hereinafter referred to as "holding surface") S1 substantially orthogonal to the Z-axis direction (vertical direction) and a surface (hereinafter referred to as "back surface") S2 opposite to the holding surface S1. It is a substantially disc-shaped member having a The holding member 10 is made of ceramics containing, for example, AlN (aluminum nitride) or Al 2 O 3 (alumina) as a main component. In this specification, the main component means the component with the highest content ratio (weight ratio). The diameter of the holding member 10 is, for example, about 100 mm or more and 500 mm or less, and the thickness (dimension in the Z-axis direction) of the holding member 10 is, for example, about 3 mm or more and 30 mm or less. The holding member 10 corresponds to a ceramic member in the claims.

図2および図3に示すように、保持部材10の裏面S2には、後述する一対の端子部材70や一対の受電電極53に対応する一対の凹部12が形成されている。各凹部12のZ軸方向に直交する断面(XY断面)の形状は、略円形である。 As shown in FIGS. 2 and 3, the rear surface S2 of the holding member 10 is formed with a pair of recesses 12 corresponding to a pair of terminal members 70 and a pair of power receiving electrodes 53, which will be described later. The cross section (XY cross section) of each concave portion 12 perpendicular to the Z-axis direction has a substantially circular shape.

支持部材20は、Z略方向に延びる略円管状の部材である。支持部材20は、保持部材10と同様に、例えばAlNやAlを主成分とするセラミックスにより構成されている。支持部材20の外径は、例えば30mm以上、90mm以下程度であり、支持部材20の高さ(Z軸方向における寸法)は、例えば100mm以上、300mm以下程度である。 The support member 20 is a substantially cylindrical member extending substantially in the Z direction. Like the holding member 10, the supporting member 20 is made of ceramics containing, for example , AlN or Al2O3 as a main component. The outer diameter of the support member 20 is, for example, about 30 mm or more and 90 mm or less, and the height (dimension in the Z-axis direction) of the support member 20 is, for example, about 100 mm or more and 300 mm or less.

図2に示すように、支持部材20には、支持部材20の上面S3から下面S4までZ軸方向に延びる貫通孔22が形成されている。貫通孔22のZ軸方向に直交する断面(XY断面)の形状は、略円形である。 As shown in FIG. 2, the support member 20 is formed with a through hole 22 extending in the Z-axis direction from the upper surface S3 to the lower surface S4 of the support member 20. As shown in FIG. A cross section (XY cross section) of the through-hole 22 perpendicular to the Z-axis direction has a substantially circular shape.

図2に示すように、保持部材10と支持部材20とは、保持部材10の裏面S2と支持部材20の上面S3とがZ軸方向に互いに対向するように、かつ、保持部材10と支持部材20とが互いに略同軸となるように配置されており、公知の接合材料により形成された接合部30を介して互いに接合されている。 As shown in FIG. 2, the holding member 10 and the supporting member 20 are arranged such that the back surface S2 of the holding member 10 and the upper surface S3 of the supporting member 20 face each other in the Z-axis direction, and the holding member 10 and the supporting member 20 are arranged so as to be substantially coaxial with each other, and are joined to each other via a joining portion 30 formed of a known joining material.

図2に示すように、保持部材10の内部には、保持部材10を加熱するヒータとしての抵抗発熱体50が配置されている。抵抗発熱体50は、例えば、Z軸方向視で略螺旋状に延びるパターンを構成している。抵抗発熱体50は、例えば、タングステンやモリブデン等の導電性材料により形成されている。 As shown in FIG. 2, inside the holding member 10, a resistance heating element 50 as a heater for heating the holding member 10 is arranged. The resistance heating element 50 forms, for example, a pattern extending substantially spirally when viewed in the Z-axis direction. The resistance heating element 50 is made of a conductive material such as tungsten or molybdenum.

また、図2および図3に示すように、保持部材10には、一対の受電電極53が配置されている。各受電電極53は、例えば、Z軸方向視で略円形の板状部材である。各受電電極53は、例えば、タングステンやモリブデン等の金属により形成されている。受電電極53は、特許請求の範囲における電極に相当する。 Moreover, as shown in FIGS. 2 and 3 , a pair of power receiving electrodes 53 are arranged on the holding member 10 . Each power receiving electrode 53 is, for example, a substantially circular plate member as viewed in the Z-axis direction. Each power receiving electrode 53 is made of, for example, metal such as tungsten or molybdenum. The power receiving electrode 53 corresponds to an electrode in claims.

一対の受電電極53の内の一方は、保持部材10の裏面S2に形成された一対の凹部12の内の一方の底面に露出しており、かつ、略螺旋状パターンを構成する抵抗発熱体50の一端付近の下面に接触することによって抵抗発熱体50と電気的に接続されている。また、一対の受電電極53の内の他方は、保持部材10の裏面S2に形成された一対の凹部12の内の他方の底面に露出しており、かつ、抵抗発熱体50の他端付近の下面に接触することによって抵抗発熱体50と電気的に接続されている。 One of the pair of power receiving electrodes 53 is exposed on the bottom surface of one of the pair of recesses 12 formed in the back surface S2 of the holding member 10, and the resistance heating element 50 forms a substantially spiral pattern. It is electrically connected to the resistance heating element 50 by contacting the lower surface near one end thereof. The other of the pair of power receiving electrodes 53 is exposed on the bottom surface of the other of the pair of recesses 12 formed in the back surface S2 of the holding member 10, and near the other end of the resistance heating element 50. It is electrically connected to the resistance heating element 50 by contacting the lower surface.

また、図2および図3に示すように、支持部材20に形成された貫通孔22内には、一対の端子部材70が収容されている。各端子部材70は、略円柱状の部材である。各端子部材70は、例えば、ニッケルやチタン等の導電性材料により形成されている。 Further, as shown in FIGS. 2 and 3, a pair of terminal members 70 are accommodated in the through holes 22 formed in the support member 20. As shown in FIGS. Each terminal member 70 is a substantially cylindrical member. Each terminal member 70 is made of a conductive material such as nickel or titanium.

一対の端子部材70の内の一方における上端部分は、保持部材10の裏面S2に形成された一対の凹部12の内の一方に収容されており、該凹部12の底面に露出した受電電極53と、ろう付け部56によって接合されている。また、一対の端子部材70の内の他方における上端部分は、保持部材10の裏面S2に形成された一対の凹部12の内の他方に収容されており、該凹部12の底面に露出した受電電極53と、ろう付け部56によって接合されている。各ろう付け部56は、例えば、Ni合金(Ni-Cr系合金等)、Au合金(Au-Ni系合金等)、純Auといった金属ろう材を用いて形成されている。端子部材70と受電電極53との接合箇所付近の構成については、後に詳述する。 The upper end portion of one of the pair of terminal members 70 is accommodated in one of the pair of recesses 12 formed in the back surface S2 of the holding member 10, and the power receiving electrode 53 exposed on the bottom surface of the recess 12 , are joined by a brazing portion 56 . The upper end portion of the other of the pair of terminal members 70 is accommodated in the other of the pair of recesses 12 formed in the back surface S2 of the holding member 10, and the power receiving electrode exposed on the bottom surface of the recess 12 53 and a brazed portion 56 . Each brazing portion 56 is formed using a metal brazing material such as Ni alloy (Ni--Cr alloy, etc.), Au alloy (Au--Ni alloy, etc.), or pure Au. The configuration around the junction between the terminal member 70 and the power receiving electrode 53 will be described in detail later.

このような構成の加熱装置100において、図示しない電源から各端子部材70および各受電電極53を介して抵抗発熱体50に電圧が印加されると、抵抗発熱体50が発熱し、これにより、保持部材10の保持面S1上に保持された対象物(例えば、半導体ウェハW)が所定の温度(例えば、400~650℃程度)に加熱される。 In the heating device 100 having such a configuration, when a voltage is applied to the resistance heating element 50 from a power source (not shown) through each terminal member 70 and each power receiving electrode 53, the resistance heating element 50 generates heat, thereby An object (for example, a semiconductor wafer W) held on the holding surface S1 of the member 10 is heated to a predetermined temperature (for example, about 400 to 650.degree. C.).

A-2.端子部材70と受電電極53との接合箇所付近の詳細構成:
上述したように、各端子部材70の上端部分は、保持部材10の裏面S2に形成された各凹部12内に収容されている。以下、各端子部材70における凹部12内に収容された柱状部分を、凹部内部分71という。上述したように、各端子部材70の凹部内部分71は、ろう付け部56によって受電電極53に接合されている。端子部材70の凹部内部分71は、特許請求の範囲における第1の部分に相当する。
A-2. Detailed configuration near the joint between the terminal member 70 and the power receiving electrode 53:
As described above, the upper end portion of each terminal member 70 is accommodated in each recess 12 formed in the rear surface S2 of the holding member 10. As shown in FIG. Hereinafter, the columnar portion of each terminal member 70 that is accommodated within the recess 12 is referred to as a recessed portion inner portion 71 . As described above, the recess inner portion 71 of each terminal member 70 is joined to the power receiving electrode 53 by the brazing portion 56 . The concave portion inner portion 71 of the terminal member 70 corresponds to the first portion in the claims.

図3に示すように、本実施形態では、各端子部材70の凹部内部分71は、開口側部分74と、底面側部分72と、中間部分73とから構成されている。開口側部分74は、保持部材10の裏面S2に形成された凹部12の開口13に近い柱状部分である。また、底面側部分72は、開口側部分74に対して凹部12の底面側(本実施形態では上側)に位置する柱状部分である。また、中間部分73は、開口側部分74と底面側部分72との間に位置する柱状部分である。底面側部分72の長さ(Z軸方向における寸法)は、例えば、2mm以上であることが好ましい。また、中間部分73の長さ(Z軸方向における寸法)は、例えば、2mm以上であることが好ましい。 As shown in FIG. 3 , in this embodiment, the recessed portion 71 of each terminal member 70 is composed of an opening side portion 74 , a bottom side portion 72 and an intermediate portion 73 . The opening side portion 74 is a columnar portion close to the opening 13 of the concave portion 12 formed on the back surface S2 of the holding member 10 . The bottom surface side portion 72 is a columnar portion located on the bottom surface side (upper side in this embodiment) of the recess 12 with respect to the opening side portion 74 . The intermediate portion 73 is a columnar portion located between the opening side portion 74 and the bottom side portion 72 . The length (dimension in the Z-axis direction) of the bottom surface side portion 72 is preferably 2 mm or more, for example. Also, the length (dimension in the Z-axis direction) of the intermediate portion 73 is preferably 2 mm or more, for example.

本実施形態では、底面側部分72の径D2の最大値は、開口側部分74の径D4より小さく、また、中間部分73の径D3は、底面側部分72の径D2の最小値より小さい。なお、開口側部分74の径D4は、例えば、3.5mm以上、5mm以下である。また、開口側部分74の径D4と底面側部分72の径D2の最大値との差は、例えば、0.2mm以上であることが好ましい。また、底面側部分72の径D2の最大値と中間部分73の径D3との差は、例えば、0.3mm以上であることが好ましい。 In this embodiment, the maximum value of the diameter D2 of the bottom side portion 72 is smaller than the diameter D4 of the opening side portion 74, and the diameter D3 of the intermediate portion 73 is smaller than the minimum value of the diameter D2 of the bottom side portion 72. In addition, the diameter D4 of the opening side portion 74 is, for example, 3.5 mm or more and 5 mm or less. Moreover, the difference between the diameter D4 of the opening side portion 74 and the maximum value of the diameter D2 of the bottom side portion 72 is preferably 0.2 mm or more, for example. Moreover, the difference between the maximum value of the diameter D2 of the bottom surface side portion 72 and the diameter D3 of the intermediate portion 73 is preferably 0.3 mm or more, for example.

また、図3に示すように、本実施形態では、各端子部材70の凹部内部分71を構成する各部分の内、開口側部分74および中間部分73の外周面には凹凸が形成されていない。一方、底面側部分72の外周面には、溝が形成されている。この溝は、互いに独立した複数の溝であってもよいし、螺旋状に延びる1本の溝であってもよい。そのため、端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図3に示す断面)において、底面側部分72の外周面には、上記中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。 Further, as shown in FIG. 3, in the present embodiment, among the portions constituting the recessed portion inner portion 71 of each terminal member 70, the outer peripheral surfaces of the opening side portion 74 and the intermediate portion 73 are not formed with unevenness. . On the other hand, grooves are formed on the outer peripheral surface of the bottom surface side portion 72 . This groove may be a plurality of grooves independent of each other, or may be a single groove extending spirally. Therefore, in a cross section (for example, the cross section shown in FIG. 3) including the central axis CL of the recessed portion inner portion 71 of the terminal member 70, the outer peripheral surface of the bottom surface side portion 72 has a plurality of electrodes arranged alternately along the direction of the central axis CL. A convex portion 78 and a plurality of concave portions 79 are formed.

また、図3に示すように、本実施形態では、各端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図3に示す断面)において、底面側部分72の外周面に形成された少なくとも1つの凹部79内に、ろう付け部56の一部分が収容されている。図3に示す例では、底面側部分72の外周面に形成された複数の凹部79の内、受電電極53側(上側)に位置する2つの凹部79内に、ろう付け部56の一部分が収容されている。 Further, as shown in FIG. 3, in the present embodiment, in a cross section including the central axis CL of the recess inner portion 71 of each terminal member 70 (for example, the cross section shown in FIG. 3), it is formed on the outer peripheral surface of the bottom side portion 72. A portion of the brazing portion 56 is received within at least one recess 79 formed by the recess. In the example shown in FIG. 3 , of the plurality of recesses 79 formed on the outer peripheral surface of the bottom surface side portion 72, two recesses 79 located on the power receiving electrode 53 side (upper side) accommodate a portion of the brazed portion 56. It is

A-3.加熱装置100の製造方法:
本実施形態の加熱装置100の製造方法は、例えば以下の通りである。はじめに、保持部材10と支持部材20とを作製する。
A-3. Manufacturing method of heating device 100:
A method for manufacturing the heating device 100 of the present embodiment is, for example, as follows. First, the holding member 10 and the supporting member 20 are produced.

保持部材10は、例えば、窒化アルミニウム粉末に、必要に応じて適量の酸化イットリウム粉末が添加された混合原料粉末を成形した成形体を、ホットプレス焼成することにより作製することができる。なお、保持部材10の内部に抵抗発熱体50を形成するために、例えば、メッシュ金属や金属箔からなる抵抗発熱体50、または、抵抗発熱体50の材料である金属粉末が、上記混合原料粉末に挟み込まれる。同様に、保持部材10に受電電極53を形成するために、例えば、金属板からなる受電電極53、または、受電電極53の材料である金属粉末が、抵抗発熱体50に接続された状態で上記混合原料粉末に挟み込まれる。この状態で全体をホットプレス焼成することにより、抵抗発熱体50と受電電極53とが配置された保持部材10を作製することができる。 The holding member 10 can be produced, for example, by hot-press firing a molded body obtained by molding a mixed raw material powder in which an appropriate amount of yttrium oxide powder is added to aluminum nitride powder. In order to form the resistance heating element 50 inside the holding member 10, for example, the resistance heating element 50 made of mesh metal or metal foil, or the metal powder that is the material of the resistance heating element 50 is mixed with the mixed raw material powder. sandwiched between Similarly, in order to form the power receiving electrode 53 on the holding member 10 , for example, the power receiving electrode 53 made of a metal plate or the metal powder that is the material of the power receiving electrode 53 is connected to the resistance heating element 50 and then Sandwiched between mixed raw material powders. By hot-press firing the whole in this state, the holding member 10 in which the resistance heating element 50 and the power receiving electrode 53 are arranged can be produced.

また、保持部材10の裏面S2の凹部12は、例えば、上述したホットプレス焼成後に、研削工具を用いた研削加工を行うことにより形成される。この研削加工は、受電電極53が露出するまで行われる。なお、受電電極53の厚さを抵抗発熱体50より厚くして、凹部12の形成のための研削加工の際に研削工具によって多少研削されても、受電電極53に割れなどの破損が生じないようにすることが好ましい。 Further, the recessed portion 12 of the back surface S2 of the holding member 10 is formed, for example, by performing a grinding process using a grinding tool after the hot press firing described above. This grinding process is performed until the power receiving electrode 53 is exposed. Even if the power receiving electrode 53 is made thicker than the resistance heating element 50 and is slightly ground by a grinding tool during the grinding process for forming the concave portion 12, the power receiving electrode 53 will not be damaged such as cracking. It is preferable to

また、支持部材20は、例えば、窒化アルミニウム粉末に、必要に応じて適量の酸化イットリウム粉末、バインダ、分散剤および可塑剤を加えた混合物にメタノール等の有機溶剤を加え、ボールミルにて混合してスラリーを得、このスラリーをスプレードライヤーにて顆粒化することによって原料粉末を作製し、該原料粉末をゴム型に充填して冷間静水圧プレスを行うことにより成形体を得、得られた成形体を脱脂した後で焼成することにより作製することができる。 The support member 20 is made by, for example, adding an organic solvent such as methanol to a mixture of aluminum nitride powder and, if necessary, an appropriate amount of yttrium oxide powder, a binder, a dispersant, and a plasticizer, and mixing the mixture in a ball mill. A raw material powder is produced by granulating the slurry with a spray dryer, and the raw material powder is filled in a rubber mold and subjected to cold isostatic pressing to obtain a molded body. It can be made by sintering the body after degreasing it.

次に、保持部材10と支持部材20とを接合する。保持部材10の裏面S2および支持部材20の上面S3に対して必要によりラッピング加工を行った後、保持部材10の裏面S2と支持部材20の上面S3との少なくとも一方に、例えば希土類や有機溶剤等を混合してペースト状にした公知の接合剤を均一に塗布した後、脱脂処理する。次いで、保持部材10の裏面S2と支持部材20の上面S3とを重ね合わせ、荷重を掛けながら常圧焼成を行うことにより、保持部材10と支持部材20とを接合する接合部30を形成する。 Next, the holding member 10 and the supporting member 20 are joined together. After the rear surface S2 of the holding member 10 and the upper surface S3 of the supporting member 20 are subjected to lapping as necessary, at least one of the rear surface S2 of the holding member 10 and the upper surface S3 of the supporting member 20 is coated with, for example, a rare earth element or an organic solvent. are evenly coated with a paste-like bonding agent, and then degreased. Next, the back surface S2 of the holding member 10 and the upper surface S3 of the supporting member 20 are superimposed and baked under normal pressure while applying a load, thereby forming the joining portion 30 that joins the holding member 10 and the supporting member 20 together.

次に、支持部材20の貫通孔22内に端子部材70を挿入し、端子部材70の上端部分(凹部内部分71の底面側部分72)を受電電極53にろう付けして、ろう付け部56を形成する。以上の製造方法により、上述した構成の加熱装置100が製造される。 Next, the terminal member 70 is inserted into the through hole 22 of the support member 20 , and the upper end portion of the terminal member 70 (bottom side portion 72 of the recessed portion 71 ) is brazed to the power receiving electrode 53 to form the brazed portion 56 . to form The heating device 100 having the configuration described above is manufactured by the manufacturing method described above.

A-4.本実施形態の効果:
以上説明したように、本実施形態の加熱装置100は、凹部12が形成された保持部材10と、凹部12の底面に露出した受電電極53と、凹部12内に収容された柱状の凹部内部分71を有する金属製の端子部材70と、受電電極53と端子部材70の凹部内部分71とを接合するろう付け部56とを備える。また、本実施形態の加熱装置100では、端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図3に示す断面)において、凹部内部分71の外周面(より詳細には、凹部内部分71の底面側部分72の外周面)に、中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。本実施形態の加熱装置100は、このような構成であるため、以下に詳述するように、端子部材70と受電電極53との間の接合強度が低下することを抑制しつつ、ろう付け部56における残留応力を効果的に低減することができ、該残留応力に起因する保持部材10のクラックの発生を効果的に抑制することができる。
A-4. Effect of this embodiment:
As described above, the heating device 100 of the present embodiment includes the holding member 10 in which the recess 12 is formed, the power receiving electrode 53 exposed on the bottom surface of the recess 12, and the columnar recess portion accommodated in the recess 12. 71 , and a brazing portion 56 that joins the power receiving electrode 53 and the recessed portion 71 of the terminal member 70 . In addition, in the heating device 100 of the present embodiment, in a cross section including the central axis CL of the inner recess portion 71 of the terminal member 70 (for example, the cross section shown in FIG. A plurality of protrusions 78 and a plurality of recesses 79 that are alternately arranged along the direction of the central axis CL are formed on the outer peripheral surface of the bottom surface side portion 72 of the recess inner portion 71 . Since the heating device 100 of the present embodiment has such a configuration, as will be described in detail below, the brazed portion can be The residual stress at 56 can be effectively reduced, and the occurrence of cracks in the holding member 10 caused by the residual stress can be effectively suppressed.

図4は、本実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の構成を示す説明図である。図4のA欄には、端子部材70と受電電極53とをろう付けにより接合する際のろう材の量が適正であった場合の構成が示されており、図4のB欄には、上記ろう材の量が適正量より僅かに多かった場合の構成が示されており、図4のC欄には、上記ろう材の量が適正量より大幅に多かった場合の構成が示されている。 FIG. 4 is an explanatory diagram showing the configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of this embodiment. Column A in FIG. 4 shows a configuration in which the amount of brazing material is appropriate when the terminal member 70 and the power receiving electrode 53 are joined by brazing, and column B in FIG. A configuration in which the amount of brazing material is slightly larger than the appropriate amount is shown, and column C of FIG. 4 shows a configuration in which the amount of brazing material is significantly larger than the appropriate amount. there is

また、図5は、比較例の加熱装置100における端子部材70と受電電極53との接合箇所付近の構成を示す説明図である。図4と同様に、図5のA欄には、端子部材70と受電電極53とをろう付けにより接合する際のろう材の量が適正であった場合の構成が示されており、図5のB欄には、上記ろう材の量が適正量より僅かに多かった場合の構成が示されており、図5のC欄には、上記ろう材の量が適正量より大幅に多かった場合の構成が示されている。図5に示す比較例の加熱装置100は、端子部材70における凹部内部分71(凹部12内に収容された部分)が、開口側部分74と底面側部分72とから構成されており、かつ、凹部内部分71の外周面に凸部78や凹部79が形成されていない点が、第1実施形態の加熱装置100とは異なる。 Moreover, FIG. 5 is an explanatory diagram showing the configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the comparative example. As in FIG. 4, column A of FIG. 5 shows a configuration in which the amount of brazing material is appropriate when joining the terminal member 70 and the power receiving electrode 53 by brazing. Column B of FIG. 5 shows the configuration when the amount of the brazing material is slightly larger than the appropriate amount, and Column C of FIG. configuration is shown. In the heating device 100 of the comparative example shown in FIG. 5, the concave portion 71 (the portion accommodated in the concave portion 12) of the terminal member 70 is composed of the opening side portion 74 and the bottom side portion 72, and The heating device 100 of the first embodiment differs from the heating device 100 of the first embodiment in that the convex portion 78 and the concave portion 79 are not formed on the outer peripheral surface of the portion 71 inside the concave portion.

ここで、端子部材70と受電電極53とのろう付け接合の際には、ろう材不足による接合強度の低下を回避するために、ろう材の適正量として、両部材の接合面間の領域を充填できる量より多めの量が設定される。そのため、端子部材70と受電電極53とのろう付け接合の際には、ろう材が、両部材の接合面間の領域より外周側に流れ出て、この流れ出たろう材が表面張力によって両部材の表面に沿って進み、該表面上に溜まった状態で凝固する。その結果、ろう付け部56には、両部材の接合面間の領域を外周側から取り囲むフィレットFが形成される。ろう材は冷却固化する際に収縮するため、フィレットFの形状が適切ではないと、具体的には、受電電極53の表面とフィレットFの傾斜面とのなす角(以下、「特定角θ」という)が大きいと、ろう付け部56における残留応力が大きくなる。ろう付け部56における残留応力は、保持部材10のクラック発生の原因となるため、小さい方が好ましい。 Here, when the terminal member 70 and the power receiving electrode 53 are joined by brazing, in order to avoid a decrease in joint strength due to insufficient brazing material, the appropriate amount of brazing material is set so that the area between the joint surfaces of both members is A larger amount than the amount that can be filled is set. Therefore, when the terminal member 70 and the power receiving electrode 53 are joined by brazing, the brazing material flows out from the region between the joining surfaces of the two members to the outer peripheral side, and the flowing-out brazing material spreads on the surfaces of the two members due to surface tension. and solidify in pools on the surface. As a result, the brazed portion 56 is formed with a fillet F surrounding the area between the joint surfaces of the two members from the outer peripheral side. Since the brazing filler metal shrinks when it is cooled and solidified, if the shape of the fillet F is not appropriate, the angle formed by the surface of the power receiving electrode 53 and the inclined surface of the fillet F (hereinafter referred to as "specific angle θ" ) is large, the residual stress in the brazed portion 56 becomes large. Residual stress in the brazed portion 56 is preferably small because it causes cracks in the holding member 10 .

図5に示す比較例の加熱装置100では、端子部材70の凹部内部分71の外周面に、凸部78や凹部79が形成されていないため、端子部材70の凹部内部分71の表面積が比較的小さい。すなわち、端子部材70の凹部内部分71の外周面は、あまり多くのろう材を保持(収容)することができない。そのため、端子部材70と受電電極53とのろう付け接合の際に、ろう材が端子部材70の凹部内部分71の外周面に沿って比較的長い距離を移動し、その結果、フィレットFの特定角θが比較的大きくなって、ろう付け部56における残留応力が比較大きくなる。従って、比較例の加熱装置100では、ろう付け部56における残留応力に起因して保持部材10にクラックが発生するおそれがある。特に、図5のB欄やC欄に示すように、ろう材の量が適正量より多かった場合に、フィレットFの特定角θが非常に大きくなり、ろう付け部56における残留応力に起因して保持部材10にクラックが発生するおそれが高くなる。 In the heating device 100 of the comparative example shown in FIG. 5, since the convex portion 78 and the concave portion 79 are not formed on the outer peripheral surface of the concave portion 71 of the terminal member 70, the surface area of the concave portion 71 of the terminal member 70 is compared. small. That is, the outer peripheral surface of the recessed portion 71 of the terminal member 70 cannot hold (accommodate) a large amount of brazing material. Therefore, when the terminal member 70 and the power receiving electrode 53 are joined by brazing, the brazing material moves a relatively long distance along the outer peripheral surface of the recessed portion inner portion 71 of the terminal member 70, and as a result, the fillet F is identified. becomes relatively large, and the residual stress in the brazed portion 56 becomes relatively large. Therefore, in the heating device 100 of the comparative example, the holding member 10 may crack due to the residual stress in the brazed portion 56 . In particular, as shown in columns B and C of FIG. The risk of cracks occurring in the holding member 10 increases.

これに対し、本実施形態の加熱装置100では、端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図3に示す断面)において、凹部内部分71の外周面に、中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されているため、端子部材70の凹部内部分71の表面積が比較的大きい。すなわち、端子部材70の凹部内部分71の外周面は、比較的多くのろう材を保持する(収容する)ことができる。そのため、端子部材70と受電電極53とのろう付け接合の際に、ろう材が端子部材70の外周面に沿って比較的長い距離を移動することを回避することができ、その結果、フィレットFの特定角θが比較的小さくなって、ろう付け部56における残留応力が比較小さくなる。なお、図4のB欄やC欄に示すように、ろう材の量が適正量より多い場合であっても、端子部材70の凹部内部分71の外周面が過剰なろう材を保持することによって、ろう材が端子部材70の外周面に沿って比較的長い距離を移動することを回避することができ、フィレットFの形状を適正に保つことができる。従って、本実施形態の加熱装置100によれば、ろう付け部56における残留応力を効果的に低減することができ、ろう付け部56における残留応力に起因して保持部材10にクラックが発生することを効果的に抑制することができる。 On the other hand, in the heating device 100 of the present embodiment, in a cross section including the central axis CL of the inner recess portion 71 of the terminal member 70 (for example, the cross section shown in FIG. 3), the outer peripheral surface of the inner recess portion 71 has a central axis CL Since a plurality of protrusions 78 and a plurality of recesses 79 are formed alternately along the CL direction, the surface area of the recess inner portion 71 of the terminal member 70 is relatively large. That is, the outer peripheral surface of the recess inner portion 71 of the terminal member 70 can hold (accommodate) a relatively large amount of brazing material. Therefore, when the terminal member 70 and the power receiving electrode 53 are joined by brazing, the brazing material can be prevented from moving along the outer peripheral surface of the terminal member 70 over a relatively long distance. becomes relatively small, and the residual stress in the brazed portion 56 becomes relatively small. As shown in columns B and C of FIG. 4, even if the amount of brazing material is larger than the appropriate amount, the outer peripheral surface of the recessed portion 71 of the terminal member 70 can hold the excess brazing material. Accordingly, the brazing material can be prevented from moving along the outer peripheral surface of the terminal member 70 over a relatively long distance, and the shape of the fillet F can be properly maintained. Therefore, according to the heating device 100 of the present embodiment, the residual stress in the brazed portion 56 can be effectively reduced, and the residual stress in the brazed portion 56 will prevent the holding member 10 from cracking. can be effectively suppressed.

また、本実施形態の加熱装置100によれば、端子部材70の凹部内部分71の表面積を比較的大きくすることができるため、過剰なろう材が保持部材10の凹部12の側面と端子部材70の開口側部分74との間の隙間に進入して(這い上がって)両者が接合されることを抑制することができ、保持部材10と端子部材70との間の熱膨張差に起因してクラックが発生することを抑制することができる。 Further, according to the heating device 100 of the present embodiment, the surface area of the recessed portion 71 of the terminal member 70 can be made relatively large, so that the excess brazing material does not reach the side surface of the recessed portion 12 of the holding member 10 and the terminal member 70 It is possible to suppress the joining of the holding member 10 and the terminal member 70 due to the difference in thermal expansion between the holding member 10 and the terminal member 70. It is possible to suppress the occurrence of cracks.

また、本実施形態の加熱装置100では、端子部材70の凹部内部分71は、柱状の開口側部分74と、開口側部分74に対して凹部12の底面側に位置し、開口側部分74より径の小さい柱状の底面側部分72とを有し、端子部材70の凹部内部分71の中心軸CLを含む断面において、複数の凸部78および複数の凹部79は底面側部分72の外周面に形成されている。そのため、本実施形態の加熱装置100によれば、保持部材10に形成された凹部12の側面と端子部材70の凹部内部分71との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材70の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部56のフィレットFを適正な形状とすることができ、ろう付け部56における残留応力に起因して保持部材10にクラックが発生することを効果的に抑制することができる。また、本実施形態の加熱装置100によれば、保持部材10に形成された凹部12の側面と端子部材70の凹部内部分71との間に大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が保持部材10の凹部12の側面と端子部材70の開口側部分74との間の隙間に進入して(這い上がって)両者が接合されることを効果的に抑制することができ、保持部材10と端子部材70との間の熱膨張差に起因してクラックが発生することを効果的に抑制することができる。 In addition, in the heating device 100 of the present embodiment, the recess inner portion 71 of the terminal member 70 is located on the bottom surface side of the recess 12 with respect to the columnar opening side portion 74 and the opening side portion 74, and In a cross section including the central axis CL of the recess inner portion 71 of the terminal member 70 , the plurality of protrusions 78 and the plurality of recesses 79 are formed on the outer peripheral surface of the bottom surface side portion 72 . formed. Therefore, according to the heating device 100 of the present embodiment, since a large space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, the brazing material can be greatly reduced. Even if it is excessive, the brazing material can be prevented from moving a relatively long distance along the outer peripheral surface of the terminal member 70, and the fillet F of the brazing portion 56 can be formed into an appropriate shape, It is possible to effectively suppress the occurrence of cracks in the holding member 10 due to residual stress in the brazed portion 56 . Further, according to the heating device 100 of the present embodiment, since a large space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, the brazing material can be greatly reduced. Even if it is excessive, the brazing material enters (crawls up) into the gap between the side surface of the concave portion 12 of the holding member 10 and the opening side portion 74 of the terminal member 70 to effectively join the two. It is possible to effectively prevent cracks from occurring due to the difference in thermal expansion between the holding member 10 and the terminal member 70 .

また、本実施形態の加熱装置100では、端子部材70の凹部内部分71が、開口側部分74と底面側部分72との間に位置し、底面側部分72の最小径より径の小さい柱状の中間部分73を有する。そのため、本実施形態の加熱装置100によれば、保持部材10に形成された凹部12の側面と端子部材70の凹部内部分71との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が端子部材70の外周面に沿って比較的長い距離を移動することを回避することができ、ろう付け部56のフィレットFを適正な形状とすることができ、ろう付け部56における残留応力に起因して保持部材10にクラックが発生することを極めて効果的に抑制することができる。また、本実施形態の加熱装置100によれば、保持部材10に形成された凹部12の側面と端子部材70の凹部内部分71との間にさらに大きな空間が確保されるため、ろう材が大幅に過剰であっても、ろう材が保持部材10の凹部12の側面と端子部材70の開口側部分74との間の隙間に進入して(這い上がって)両者が接合されることを極めて効果的に抑制することができ、保持部材10と端子部材70との間の熱膨張差に起因してクラックが発生することを極めて効果的に抑制することができる。 Further, in the heating device 100 of the present embodiment, the recessed portion 71 of the terminal member 70 is located between the opening side portion 74 and the bottom side portion 72 and has a columnar shape with a diameter smaller than the minimum diameter of the bottom side portion 72 . It has an intermediate portion 73 . Therefore, according to the heating device 100 of the present embodiment, a larger space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, so that the brazing material can be significantly reduced. Even if it is excessively large, it is possible to prevent the brazing material from moving a relatively long distance along the outer peripheral surface of the terminal member 70, and the fillet F of the brazing portion 56 can be formed into an appropriate shape. , the occurrence of cracks in the holding member 10 due to the residual stress in the brazed portion 56 can be very effectively suppressed. Further, according to the heating device 100 of the present embodiment, since a larger space is secured between the side surface of the recess 12 formed in the holding member 10 and the recess inner portion 71 of the terminal member 70, the brazing material is greatly reduced. Even if the brazing material is excessively large, it is extremely effective to enter (climb up) the gap between the side surface of the recess 12 of the holding member 10 and the opening side portion 74 of the terminal member 70 to join them together. It is possible to effectively suppress the occurrence of cracks due to the difference in thermal expansion between the holding member 10 and the terminal member 70 .

また、本実施形態の加熱装置100では、端子部材70の凹部内部分71の中心軸CLを含む断面において、凹部内部分71の外周面に形成された少なくとも1つの凹部79内に、ろう付け部56の一部分が収容されている。この構成は、端子部材70と受電電極53とのろう付け接合の際のろう材の量が、両部材の接合面間の領域を充填できる量より多めに設定されており、かつ、過剰なろう材が端子部材70の凹部内部分71の外周面に形成された凹部79内に適切に収容されていることを意味する。そのため、本実施形態の加熱装置100によれば、ろう材が不足して端子部材70と受電電極53との間の接合強度が低下することを抑制しつつ、ろう付け部56における残留応力や保持部材10と端子部材70との間の熱膨張差に起因してクラックが発生することを抑制することができる。 In addition, in the heating device 100 of the present embodiment, in a cross section including the central axis CL of the inner recess portion 71 of the terminal member 70, at least one recess 79 formed in the outer peripheral surface of the inner recess portion 71 includes a brazing portion. 56 is housed. In this configuration, the amount of brazing material when brazing the terminal member 70 and the power receiving electrode 53 is set to be larger than the amount that can fill the area between the joint surfaces of the two members, and the amount of brazing material is excessive. It means that the material is properly accommodated in the recess 79 formed in the outer peripheral surface of the recess inner portion 71 of the terminal member 70 . Therefore, according to the heating device 100 of the present embodiment, it is possible to suppress the reduction in the bonding strength between the terminal member 70 and the power receiving electrode 53 due to insufficient brazing material, and reduce the residual stress and retention in the brazed portion 56 . The occurrence of cracks due to the difference in thermal expansion between the member 10 and the terminal member 70 can be suppressed.

B.第2実施形態:
図6は、第2実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。図6には、図3に示された第1実施形態の加熱装置100のXZ断面構成に対応する第2実施形態の加熱装置100のXZ断面構成が示されている。以下では、第2実施形態の加熱装置100の構成の内、上述した第1実施形態の加熱装置100の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。
B. Second embodiment:
FIG. 6 is an explanatory diagram showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the second embodiment. FIG. 6 shows the XZ cross-sectional configuration of the heating device 100 of the second embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. In the following, of the configuration of the heating device 100 of the second embodiment, the same configurations as those of the heating device 100 of the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

図6に示すように、第2実施形態の加熱装置100は、主として、端子部材70の凹部内部分71を構成する底面側部分72aの構成が、第1実施形態の加熱装置100と異なっている。具体的には、第2実施形態の加熱装置100では、底面側部分72aは、端子部材70の外周面にワイヤ75が巻き付けられて固定された構成を有している。このワイヤ75は、互いに独立した複数のワイヤであってもよいし、略螺旋状に延びる1本のワイヤであってもよい。そのため、端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図6に示す断面)において、凹部内部分71の底面側部分72aの外周面には、上記中心軸CL方向に沿って交互に並ぶ複数の凸部78(すなわち、ワイヤ75が存在する部分)および複数の凹部79(すなわち、ワイヤ75が存在しない部分)が形成されている。 As shown in FIG. 6, the heating device 100 of the second embodiment differs from the heating device 100 of the first embodiment mainly in the configuration of the bottom surface side portion 72a that constitutes the recessed portion 71 of the terminal member 70. . Specifically, in the heating device 100 of the second embodiment, the bottom side portion 72a has a structure in which the wire 75 is wound around the outer peripheral surface of the terminal member 70 and fixed. The wire 75 may be a plurality of wires independent of each other, or may be a single wire extending substantially spirally. Therefore, in a cross section including the central axis CL of the inner recess portion 71 of the terminal member 70 (for example, the cross section shown in FIG. 6), the outer peripheral surface of the bottom surface side portion 72a of the inner recess portion 71 has a thickness along the direction of the central axis CL. A plurality of protrusions 78 (that is, portions where wires 75 are present) and a plurality of recesses 79 (that is, portions where wires 75 are not present) are formed alternately.

このように、第2実施形態の加熱装置100では、上述した第1実施形態の加熱装置100と同様に、端子部材70の凹部内部分71の中心軸CLを含む断面において、凹部内部分71の外周面(より詳細には、凹部内部分71の底面側部分72aの外周面)に、中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。そのため、第2実施形態の加熱装置100によれば、上述した第1実施形態の加熱装置100と同様に、端子部材70と受電電極53との間の接合強度が低下することを抑制しつつ、ろう付け部56における残留応力を効果的に低減することができ、該残留応力に起因する保持部材10のクラックの発生を効果的に抑制することができる。 As described above, in the heating device 100 of the second embodiment, similarly to the heating device 100 of the first embodiment described above, in a cross section including the central axis CL of the inner recess portion 71 of the terminal member 70, the A plurality of protrusions 78 and a plurality of recesses 79 that are alternately arranged along the central axis CL direction are formed on the outer peripheral surface (more specifically, the outer peripheral surface of the bottom surface side portion 72a of the recess inner portion 71). Therefore, according to the heating device 100 of the second embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing a decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and cracks in the holding member 10 caused by the residual stress can be effectively suppressed.

C.第3実施形態:
図7は、第3実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。図7には、図3に示された第1実施形態の加熱装置100のXZ断面構成に対応する第2実施形態の加熱装置100のXZ断面構成が示されている。以下では、第3実施形態の加熱装置100の構成の内、上述した第1実施形態の加熱装置100の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。
C. Third embodiment:
FIG. 7 is an explanatory diagram showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the third embodiment. FIG. 7 shows the XZ cross-sectional configuration of the heating device 100 of the second embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. In the following, of the configuration of the heating device 100 of the third embodiment, the same configurations as those of the heating device 100 of the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

図7に示すように、第3実施形態の加熱装置100は、主として、端子部材70の凹部内部分71bの構成が、第1実施形態の加熱装置100と異なっている。具体的には、第3実施形態の加熱装置100では、端子部材70の凹部内部分71bが、開口側部分74と底面側部分72bから構成されている。第3実施形態では、底面側部分72bの径D2は、開口側部分74の径D4と略同一である。なお、第3実施形態では、第1実施形態と同様に、底面側部分72bの外周面に溝が形成されており、その結果、端子部材70の凹部内部分71bの中心軸CLを含む断面(例えば、図7に示す断面)において、底面側部分72bの外周面に、上記中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。 As shown in FIG. 7, the heating device 100 of the third embodiment differs from the heating device 100 of the first embodiment mainly in the structure of the recessed portion 71b of the terminal member 70. As shown in FIG. Specifically, in the heating device 100 of the third embodiment, the recess inner portion 71b of the terminal member 70 is composed of the opening side portion 74 and the bottom side portion 72b. In the third embodiment, the diameter D2 of the bottom side portion 72b is substantially the same as the diameter D4 of the opening side portion 74. As shown in FIG. In the third embodiment, as in the first embodiment, grooves are formed in the outer peripheral surface of the bottom surface side portion 72b. As a result, a cross section ( For example, in the cross section shown in FIG. 7), a plurality of protrusions 78 and a plurality of recesses 79 that are alternately arranged along the direction of the central axis CL are formed on the outer peripheral surface of the bottom side portion 72b.

このように、第3実施形態の加熱装置100では、上述した第1実施形態の加熱装置100と同様に、端子部材70の凹部内部分71bの中心軸CLを含む断面において、凹部内部分71bの外周面(より詳細には、凹部内部分71bの底面側部分72bの外周面)に、中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。そのため、第3実施形態の加熱装置100によれば、上述した第1実施形態の加熱装置100と同様に、端子部材70と受電電極53との間の接合強度が低下することを抑制しつつ、ろう付け部56における残留応力を効果的に低減することができ、該残留応力に起因する保持部材10のクラックの発生を効果的に抑制することができる。 As described above, in the heating device 100 of the third embodiment, similarly to the heating device 100 of the first embodiment, in a cross section including the central axis CL of the inner recess portion 71b of the terminal member 70, the inner recess portion 71b A plurality of protrusions 78 and a plurality of recesses 79 that are alternately arranged along the central axis CL direction are formed on the outer peripheral surface (more specifically, the outer peripheral surface of the bottom surface side portion 72b of the recess inner portion 71b). Therefore, according to the heating device 100 of the third embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing a decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and cracks in the holding member 10 caused by the residual stress can be effectively suppressed.

D.第4実施形態:
図8は、第4実施形態の加熱装置100における端子部材70と受電電極53との接合箇所付近の詳細構成を示す説明図である。図8には、図3に示された第1実施形態の加熱装置100のXZ断面構成に対応する第4実施形態の加熱装置100のXZ断面構成が示されている。以下では、第4実施形態の加熱装置100の構成の内、上述した第1実施形態の加熱装置100の構成と同一の構成については、同一の符号を付すことによってその説明を適宜省略する。
D. Fourth embodiment:
FIG. 8 is an explanatory diagram showing the detailed configuration of the vicinity of the joint between the terminal member 70 and the power receiving electrode 53 in the heating device 100 of the fourth embodiment. FIG. 8 shows the XZ cross-sectional configuration of the heating device 100 of the fourth embodiment corresponding to the XZ cross-sectional configuration of the heating device 100 of the first embodiment shown in FIG. In the following, of the configuration of the heating device 100 of the fourth embodiment, the same configurations as those of the heating device 100 of the first embodiment described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

図8に示すように、第4実施形態の加熱装置100は、主として、端子部材70と受電電極53との間に緩衝部材(第1の緩衝部材81および第2の緩衝部材82)が配置されている点が、第1実施形態の加熱装置100と異なっている。具体的には、第4実施形態の加熱装置100では、受電電極53の下側に第1の緩衝部材81が配置され、第1の緩衝部材81の下側に第2の緩衝部材82が配置され、第2の緩衝部材82の下側に端子部材70(端子部材70の底面側部分72)が配置されている。 As shown in FIG. 8, in the heating device 100 of the fourth embodiment, buffer members (first buffer member 81 and second buffer member 82) are mainly arranged between the terminal member 70 and the power receiving electrode 53. is different from the heating device 100 of the first embodiment. Specifically, in the heating device 100 of the fourth embodiment, the first buffer member 81 is arranged below the power receiving electrode 53, and the second buffer member 82 is arranged below the first buffer member 81. The terminal member 70 (bottom side portion 72 of the terminal member 70 ) is arranged below the second cushioning member 82 .

第1の緩衝部材81および第2の緩衝部材82は、Z軸方向視で略円形の板状部材であり、例えば、タングステンやモリブデン、コバール等の金属により形成されている。ただし、第1の緩衝部材81および第2の緩衝部材82は、端子部材70と受電電極53との熱膨張差を緩和するために配置されるものである。そのため、第1の緩衝部材81の形成材料としては、受電電極53の形成材料と同じ材料、または、受電電極53の熱膨張係数と第2の緩衝部材82の熱膨張係数との間の熱膨張係数を有する材料が用いられ、また、第2の緩衝部材82の材料としては、第1の緩衝部材81の熱膨張係数と端子部材70の熱膨張係数との間の熱膨張係数を有する材料が用いられる。なお、第4実施形態でも、第1の緩衝部材81および第2の緩衝部材82を挟みつつ、端子部材70と受電電極53とがろう付け部56により接合されている。 The first cushioning member 81 and the second cushioning member 82 are substantially circular plate-shaped members when viewed in the Z-axis direction, and are made of metal such as tungsten, molybdenum, or kovar, for example. However, the first buffer member 81 and the second buffer member 82 are arranged to reduce the difference in thermal expansion between the terminal member 70 and the power receiving electrode 53 . Therefore, as the material for forming the first buffer member 81, the same material as the material for forming the power receiving electrode 53, or the thermal expansion coefficient between the thermal expansion coefficient of the power receiving electrode 53 and the thermal expansion coefficient of the second buffer member 82 is used. A material having a coefficient of thermal expansion between that of the first buffer member 81 and that of the terminal member 70 is used as the material of the second buffer member 82 . Used. Also in the fourth embodiment, the terminal member 70 and the power receiving electrode 53 are joined by the brazing portion 56 while sandwiching the first buffer member 81 and the second buffer member 82 .

このように、第4実施形態では、端子部材70と受電電極53との間に第1の緩衝部材81および第2の緩衝部材82が配置されている点が異なるものの、第1実施形態と同様に、端子部材70の凹部内部分71を構成する底面側部分72の外周面に溝が形成されており、その結果、端子部材70の凹部内部分71の中心軸CLを含む断面(例えば、図8に示す断面)において、凹部内部分71の外周面(より詳細には、凹部内部分71の底面側部分72の外周面)に、上記中心軸CL方向に沿って交互に並ぶ複数の凸部78および複数の凹部79が形成されている。そのため、第4実施形態の加熱装置100によれば、上述した第1実施形態の加熱装置100と同様に、端子部材70と受電電極53との間の接合強度が低下することを抑制しつつ、ろう付け部56における残留応力を効果的に低減することができ、該残留応力に起因する保持部材10のクラックの発生を効果的に抑制することができる。また、第4実施形態の加熱装置100によれば、端子部材70と受電電極53との熱膨張差に起因して、保持部材10等にクラックが発生することを抑制することができる。 As described above, the fourth embodiment is similar to the first embodiment except that the first buffer member 81 and the second buffer member 82 are arranged between the terminal member 70 and the power receiving electrode 53 . In addition, a groove is formed in the outer peripheral surface of the bottom surface side portion 72 that constitutes the recessed portion 71 of the terminal member 70. As a result, a cross section including the central axis CL of the recessed portion 71 of the terminal member 70 (for example, FIG. 8), a plurality of protrusions arranged alternately along the direction of the central axis CL on the outer peripheral surface of the recessed portion 71 (more specifically, on the outer peripheral surface of the bottom side portion 72 of the recessed portion 71). 78 and a plurality of recesses 79 are formed. Therefore, according to the heating device 100 of the fourth embodiment, similarly to the heating device 100 of the first embodiment described above, while suppressing a decrease in the bonding strength between the terminal member 70 and the power receiving electrode 53, Residual stress in the brazed portion 56 can be effectively reduced, and cracks in the holding member 10 caused by the residual stress can be effectively suppressed. Further, according to the heating device 100 of the fourth embodiment, it is possible to suppress the occurrence of cracks in the holding member 10 and the like due to the difference in thermal expansion between the terminal member 70 and the power receiving electrode 53 .

E.変形例:
本明細書で開示される技術は、上述の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の形態に変形することができ、例えば次のような変形も可能である。
E. Variant:
The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various forms without departing from the scope of the invention. For example, the following modifications are possible.

上記実施形態における加熱装置100の構成は、あくまで例示であり、種々変形可能である。例えば、上記実施形態では、抵抗発熱体50と受電電極53とが接触することにより電気的に接続されているが、両者が他の導電性部材(例えば、ビア)を介して電気的に接続されているとしてもよい。 The configuration of the heating device 100 in the above embodiment is merely an example, and various modifications are possible. For example, in the above-described embodiment, the resistance heating element 50 and the power receiving electrode 53 are electrically connected by contacting each other. It may be

また、上記各実施形態では、各端子部材70の凹部内部分71の中心軸CLを含む断面において、底面側部分72の外周面に形成された少なくとも1つの凹部79内に、ろう付け部56の一部分が収容されているとしているが、必ずしも凹部79内にろう付け部56の一部分が収容されている必要はない。 In each of the above-described embodiments, in a cross section including the central axis CL of the recess inner portion 71 of each terminal member 70, the brazing portion 56 is located in at least one recess 79 formed in the outer peripheral surface of the bottom surface side portion 72. Although said to be partially contained, it is not necessary that a portion of the brazed portion 56 is contained within the recess 79 .

また、上記第1,2,4実施形態では、端子部材70の凹部内部分71が、開口側部分74と底面側部分72と中間部分73とから構成されているが、凹部内部分71が、開口側部分74と底面側部分72とから構成されており、中間部分73が存在しないとしてもよい。また、上記第1,2,4実施形態では、底面側部分72の径D2が開口側部分74の径D4より小さいとしているが、底面側部分72の径D2が開口側部分74の径D4と略同一であるとしてもよい。 In addition, in the first, second and fourth embodiments, the recessed portion 71 of the terminal member 70 is composed of the opening side portion 74, the bottom side portion 72 and the intermediate portion 73, but the recessed portion 71 is It is composed of an opening side portion 74 and a bottom side portion 72, and the intermediate portion 73 may not exist. Further, in the first, second and fourth embodiments, the diameter D2 of the bottom surface side portion 72 is smaller than the diameter D4 of the opening side portion 74, but the diameter D2 of the bottom surface side portion 72 is less than the diameter D4 of the opening side portion 74. They may be substantially the same.

また、上記実施形態では、各端子部材70が、1つの部材として構成されているが、各端子部材70が、上下方向に並ぶと共に、ネジやかしめ等により互いに接続された複数の部材から構成されているとしてもよい。その場合においても、各端子部材70を構成する複数の部材の内、保持部材10の凹部12の底面に露出した受電電極53と接合される部材が、特許請求の範囲における端子部材に相当する。また、その場合において、各端子部材70を構成する複数の部材の内、受電電極53と接合される部材は、その一部分のみが保持部材10の凹部12内に収容されていてもよいし、その全体が保持部材10の凹部12内に収容されていてもよい。いずれの場合も、保持部材10の凹部12内に収容された部分が、特許請求の範囲における第1の部分に相当する。 In the above-described embodiment, each terminal member 70 is configured as a single member, but each terminal member 70 is configured by a plurality of members arranged vertically and connected to each other by screws, crimps, or the like. It may be In this case, among the plurality of members forming each terminal member 70, the member joined to the power receiving electrode 53 exposed on the bottom surface of the concave portion 12 of the holding member 10 corresponds to the terminal member in the claims. In this case, among the plurality of members constituting each terminal member 70, only a portion of the member that is joined to the power receiving electrode 53 may be accommodated in the recess 12 of the holding member 10, or The entirety may be housed within the recess 12 of the holding member 10 . In either case, the portion housed in the recess 12 of the holding member 10 corresponds to the first portion in the claims.

また、上記実施形態の加熱装置100を構成する各部材の形状や個数、形成材料等は、あくまで一例であり、種々変形可能である。 Further, the shape, number, forming material, etc. of each member constituting the heating device 100 of the above-described embodiment are merely examples, and can be variously modified.

また、上記実施形態における加熱装置100の製造方法はあくまで一例であり、種々変形可能である。例えば、上記実施形態では、保持部材10がホットプレス焼成により作製されるとしているが、保持部材10がセラミックスグリーンシートの積層体を焼成することにより作製されるとしてもよい。 Moreover, the manufacturing method of the heating device 100 in the above-described embodiment is merely an example, and various modifications are possible. For example, in the above embodiment, the holding member 10 is produced by hot press firing, but the holding member 10 may be produced by firing a laminate of ceramic green sheets.

また、上記実施形態では、加熱装置100が備える抵抗発熱体50に電気的に接続された受電電極53と端子部材70との接合箇所の構成について詳細に説明したが、本明細書に開示された技術は、凹部が形成されたセラミックス部材と、該凹部の底面に露出した電極と、該凹部内に収容された柱状の第1の部分を有する金属製の端子部材と、該電極と該端子部材の第1の部分とを接合するろう付け部とを備える半導体製造装置用部品にも同様に適用することができる。例えば、本明細書に開示された技術は、半導体製造装置用部品である静電チャックを構成するセラミックス部材のチャック電極に電気的に接続された電極と端子部材との接合箇所についても同様に適用可能である。 Further, in the above embodiment, the configuration of the joint between the power receiving electrode 53 electrically connected to the resistance heating element 50 provided in the heating device 100 and the terminal member 70 was described in detail. The technique includes a ceramic member having a recess, an electrode exposed at the bottom surface of the recess, a metal terminal member having a columnar first portion accommodated in the recess, the electrode and the terminal member. The same can be applied to a component for a semiconductor manufacturing apparatus provided with a brazing portion that joins the first portion of. For example, the technology disclosed in the present specification can be similarly applied to a joint between an electrode electrically connected to a chuck electrode of a ceramic member constituting an electrostatic chuck, which is a part of a semiconductor manufacturing apparatus, and a terminal member. It is possible.

10:保持部材 12:凹部 13:開口 20:支持部材 22:貫通孔 30:接合部 50:抵抗発熱体 53:受電電極 56:ろう付け部 70:端子部材 71:凹部内部分 72:底面側部分 73:中間部分 74:開口側部分 75:ワイヤ 78:凸部 79:凹部 81:第1の緩衝部材 82:第2の緩衝部材 100:加熱装置 CL:中心軸 F:フィレット S1:保持面 S2:裏面 S3:上面 S4:下面 W:半導体ウェハ 10: Holding member 12: Recess 13: Opening 20: Supporting member 22: Through hole 30: Joint 50: Resistance heating element 53: Power receiving electrode 56: Brazing portion 70: Terminal member 71: Internal portion of recess 72: Bottom side portion 73: Intermediate portion 74: Opening side portion 75: Wire 78: Convex portion 79: Concave portion 81: First cushioning member 82: Second cushioning member 100: Heating device CL: Central axis F: Fillet S1: Holding surface S2: Back surface S3: Top surface S4: Bottom surface W: Semiconductor wafer

Claims (5)

凹部が形成されたセラミックス部材と、
前記凹部の底面に露出した電極と、
金属製の端子部材であって、前記凹部内に収容された柱状の第1の部分を有する、端子部材と、
前記電極と前記端子部材の前記第1の部分とを接合するろう付け部と、
を備える半導体製造装置用部品において、
前記端子部材の前記第1の部分の中心軸を含む断面において、前記第1の部分の外周面に、ワイヤが巻き付けられて固定され、前記中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されている、
ことを特徴とする半導体製造装置用部品。
a ceramic member having a concave portion;
an electrode exposed on the bottom surface of the recess;
a terminal member made of metal, the terminal member having a columnar first portion housed in the recess;
a brazing portion that joins the electrode and the first portion of the terminal member;
In parts for semiconductor manufacturing equipment comprising
In a cross section including the central axis of the first portion of the terminal member, a wire is wound around and fixed to the outer peripheral surface of the first portion, and a plurality of convex portions are arranged alternately along the central axis direction; a plurality of recesses are formed,
A component for semiconductor manufacturing equipment characterized by:
請求項1に記載の半導体製造装置用部品において、
前記端子部材の前記第1の部分は、柱状の開口側部分と、前記開口側部分に対して前記凹部の底面側に位置し、前記開口側部分より径の小さい柱状の底面側部分と、を有し、
前記端子部材の前記第1の部分の中心軸を含む前記断面において、前記複数の凸部および複数の凹部は、前記第1の部分の前記底面側部分の外周面に形成されている、
ことを特徴とする半導体製造装置用部品。
The component for semiconductor manufacturing equipment according to claim 1,
The first portion of the terminal member includes a columnar opening side portion and a columnar bottom side portion located on the bottom side of the recess with respect to the opening side portion and having a diameter smaller than that of the opening side portion. have
In the cross section including the central axis of the first portion of the terminal member, the plurality of protrusions and the plurality of recesses are formed on the outer peripheral surface of the bottom side portion of the first portion,
A component for semiconductor manufacturing equipment characterized by:
請求項2に記載の半導体製造装置用部品において、
前記端子部材の前記第1の部分は、前記開口側部分と前記底面側部分との間に位置し、前記底面側部分の最小径より径の小さい柱状の中間部分を有する、
ことを特徴とする半導体製造装置用部品。
In the component for semiconductor manufacturing equipment according to claim 2,
The first portion of the terminal member has a columnar intermediate portion positioned between the opening side portion and the bottom side portion and having a smaller diameter than the minimum diameter of the bottom side portion.
A component for semiconductor manufacturing equipment characterized by:
凹部が形成されたセラミックス部材と、a ceramic member having a concave portion;
前記凹部の底面に露出した電極と、 an electrode exposed on the bottom surface of the recess;
金属製の端子部材であって、前記凹部内に収容された柱状の第1の部分を有する、端子部材と、 a terminal member made of metal, the terminal member having a columnar first portion housed in the recess;
前記電極と前記端子部材の前記第1の部分とを接合するろう付け部と、 a brazing portion that joins the electrode and the first portion of the terminal member;
を備える半導体製造装置用部品において、In parts for semiconductor manufacturing equipment comprising
前記端子部材の前記第1の部分の中心軸を含む断面において、前記第1の部分の外周面に、前記中心軸方向に沿って交互に並ぶ複数の凸部および複数の凹部が形成されており、 In a cross section including the central axis of the first portion of the terminal member, a plurality of convex portions and a plurality of concave portions are formed alternately along the central axis direction on the outer peripheral surface of the first portion. ,
前記端子部材の前記第1の部分は、柱状の開口側部分と、前記開口側部分に対して前記凹部の底面側に位置し、前記開口側部分より径の小さい柱状の底面側部分と、を有し、 The first portion of the terminal member includes a columnar opening side portion and a columnar bottom side portion located on the bottom side of the recess with respect to the opening side portion and having a diameter smaller than that of the opening side portion. have
前記端子部材の前記第1の部分の中心軸を含む前記断面において、前記複数の凸部および複数の凹部は、前記第1の部分の前記底面側部分の外周面に形成されており、 In the cross section including the central axis of the first portion of the terminal member, the plurality of protrusions and the plurality of recesses are formed on the outer peripheral surface of the bottom side portion of the first portion,
前記端子部材の前記第1の部分は、前記開口側部分と前記底面側部分との間に位置し、前記底面側部分の最小径より径の小さい柱状の中間部分を有する、 The first portion of the terminal member has a columnar intermediate portion located between the opening side portion and the bottom side portion and having a smaller diameter than the minimum diameter of the bottom side portion.
ことを特徴とする半導体製造装置用部品。A component for semiconductor manufacturing equipment characterized by:
請求項1から請求項までのいずれか一項に記載の半導体製造装置用部品において、
前記端子部材の前記第1の部分の中心軸を含む断面において、前記第1の部分の外周面に形成された少なくとも1つの前記凹部内に、前記ろう付け部の一部分が収容されている、
ことを特徴とする半導体製造装置用部品。
In the component for semiconductor manufacturing equipment according to any one of claims 1 to 4 ,
part of the brazing portion is accommodated in at least one recess formed in the outer peripheral surface of the first portion in a cross section including the central axis of the first portion of the terminal member;
A component for semiconductor manufacturing equipment characterized by:
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174411A (en) 1998-12-09 2000-06-23 Alps Electric Co Ltd Terminal mount structure
JP2005085657A (en) 2003-09-10 2005-03-31 Ibiden Co Ltd Ceramic heater
JP2005197393A (en) 2004-01-06 2005-07-21 Ibiden Co Ltd Electrode-burying member for plasma generator
JP2009188394A (en) 2008-01-08 2009-08-20 Ngk Insulators Ltd Bonding structure and semiconductor manufacturing apparatus
JP2010050198A (en) 2008-08-20 2010-03-04 Denso Wave Inc Mounting structure of component with lead

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174411A (en) 1998-12-09 2000-06-23 Alps Electric Co Ltd Terminal mount structure
JP2005085657A (en) 2003-09-10 2005-03-31 Ibiden Co Ltd Ceramic heater
JP2005197393A (en) 2004-01-06 2005-07-21 Ibiden Co Ltd Electrode-burying member for plasma generator
JP2009188394A (en) 2008-01-08 2009-08-20 Ngk Insulators Ltd Bonding structure and semiconductor manufacturing apparatus
JP2010050198A (en) 2008-08-20 2010-03-04 Denso Wave Inc Mounting structure of component with lead

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