JP6887307B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6887307B2 JP6887307B2 JP2017100274A JP2017100274A JP6887307B2 JP 6887307 B2 JP6887307 B2 JP 6887307B2 JP 2017100274 A JP2017100274 A JP 2017100274A JP 2017100274 A JP2017100274 A JP 2017100274A JP 6887307 B2 JP6887307 B2 JP 6887307B2
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- hafnium oxide
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- 239000004065 semiconductor Substances 0.000 title claims description 126
- 238000004519 manufacturing process Methods 0.000 title claims description 78
- 239000013078 crystal Substances 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 91
- 239000004020 conductor Substances 0.000 claims description 90
- 238000000034 method Methods 0.000 claims description 87
- 238000010438 heat treatment Methods 0.000 claims description 70
- 229910044991 metal oxide Inorganic materials 0.000 claims description 35
- 150000004706 metal oxides Chemical class 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 17
- 229910052735 hafnium Inorganic materials 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 229910052726 zirconium Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 172
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 171
- 230000005621 ferroelectricity Effects 0.000 description 29
- 239000012535 impurity Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 230000005476 size effect Effects 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Description
酸化ハフニウム(HfOx)膜は、薄くしても強誘電性を示す逆サイズ効果を有するので、この酸化膜を強誘電体メモリ等の強誘電体膜として使用することで強誘電体メモリ等の微細化を実現できる。このため、酸化ハフニウム膜の強誘電性を発現させることが望まれている。
本実施の形態1では、例えば、1トランジスタ(1T)型の強誘電体メモリセルの製造方法について図12〜図15を参照して説明する。なお、図12〜図15は本実施の形態の半導体装置の製造工程中の基板1Sの要部断面図である。
本実施の形態2では、例えば、1トランジスタ1キャパシタ(1T1C)型の強誘電体メモリセルの製造方法について図17〜図20を参照して説明する。なお、図17〜図20は本実施の形態2の半導体装置の製造工程中の基板1Sの要部断面図である。
本実施の形態3では、例えば、フィン型のトランジスタで1T型の強誘電体メモリセルを構成する場合の半導体装置の製造方法を図21〜図30を参照して説明する。なお、図21〜図30は本実施の形態3の半導体装置の製造工程中の基板1Sの要部断面図である。また、図21〜図30の右の断面図は、左の断面図の中央位置において左の断面図に交差(直交)する断面図である。
2 絶縁膜
3 酸化ハフニウム膜
4 キャップ導体膜
5a 半導体領域
5b 半導体領域
10 導体膜
11 導体膜
20 絶縁膜
F 強誘電体膜
LP 多結晶シリコン膜
Qf FeFET
Qs 選択MOSFET
Gm ゲート電極
Gs ゲート電極
Gi ゲート絶縁膜
SR ソース領域
DR ドレイン領域
CD キャパシタ
CE1 下部電極
CE2 上部電極
FA フィン
ML 配線
MWA マイクロ波加熱装置
MG マグネトロン
MW マイクロ波
Claims (23)
- (a)半導体基板上に、ハフニウムおよびジルコニウムの少なくとも一方と酸素とを主成分とする金属酸化膜を堆積する工程、
(b)前記金属酸化膜上に導体膜を堆積する工程、
(c)前記金属酸化膜にマイクロ波加熱処理を施す工程、
(d)前記導体膜上に半導体膜を堆積する工程、
(e)前記半導体膜、前記導体膜および前記金属酸化膜をパターニングして、ゲート電極および強誘電体膜を形成する工程、
を有し、
前記ゲート電極および前記強誘電体膜は、強誘電体メモリセルを構成している、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(c)工程を、前記(a)工程後、前記(b)工程前に実施する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(c)工程を、前記(b)工程後に実施する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(a)工程は、
(a1)前記半導体基板上に第1絶縁膜を形成する工程、
(a2)前記第1絶縁膜を覆うように前記金属酸化膜を堆積する工程、
を有する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(a)工程は、
(a1)前記半導体基板の一部で構成され、前記半導体基板の主面から突出する突出部を形成する工程、
(a2)前記突出部を覆うように前記半導体基板の主面上に前記金属酸化膜を堆積する工程、
を有する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記(a1)工程後、前記(a2)工程前に、前記突出部の表面に第2絶縁膜を形成する工程を有する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(b)工程の前記導体膜は窒化チタンを主成分とする、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記導体膜を高周波スパッタリング法で堆積する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記金属酸化膜に、シリコン、窒素、炭素またはフッ素のいずれかの元素を1つ以上添加する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(c)工程のマイクロ波の周波数が1GHz〜10GHzである、半導体装置の製造方法。 - 請求項1〜10のいずれか一項に記載の半導体装置の製造方法において、
前記ゲート電極は、前記半導体膜および前記導体膜で形成されており、
前記強誘電体膜は、前記金属酸化膜で形成されている、半導体装置の製造方法。 - 請求項1〜11のいずれか一項に記載の半導体装置の製造方法において、
(f)前記半導体基板のうち、前記強誘電体膜から露出した領域内にソース領域およびドレイン領域を形成する工程を有し、
前記ゲート電極、前記強誘電体膜、前記ソース領域および前記ドレイン領域は、前記強誘電体メモリセルを構成している、半導体装置の製造方法。 - 請求項1〜12のいずれか一項に記載の半導体装置の製造方法において、
前記(c)工程では、前記強誘電体膜の結晶中に斜方晶が形成される、半導体装置の製造方法。 - (a)半導体基板上に第1導体膜を堆積する工程、
(b)前記第1導体膜上に、ハフニウムおよびジルコニウムの少なくとも一方と酸素とを主成分とする金属酸化膜を堆積する工程、
(c)前記金属酸化膜上に第2導体膜を堆積する工程、
(d)前記金属酸化膜にマイクロ波加熱処理を施す工程、
(e)前記第2導体膜、前記金属酸化膜および前記第1導体膜をパターニングして、下部電極、強誘電体膜および上部電極の積層体で構成されたキャパシタを形成する工程、
を有し、
前記キャパシタは、強誘電体メモリセルを構成している、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記(d)工程を、前記(b)工程後、前記(c)工程前に実施する、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記(d)工程を、前記(c)工程後に実施する、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記(c)工程の前記第2導体膜は窒化チタンを主成分とする、半導体装置の製造方法。 - 請求項17記載の半導体装置の製造方法において、
前記第2導体膜を高周波スパッタリング法で堆積する、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記金属酸化膜に、シリコン、窒素、炭素またはフッ素のいずれかの元素を1つ以上添加する、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記(d)工程のマイクロ波の周波数が1GHz〜10GHzである、半導体装置の製造方法。 - 請求項14〜20のいずれか一項に記載の半導体装置の製造方法において、
前記強誘電体膜は、前記金属酸化膜で形成されている、半導体装置の製造方法。 - 請求項14〜21のいずれか一項に記載の半導体装置の製造方法において、
(f)前記半導体基板に電界効果トランジスタを形成する工程、
前記電界効果トランジスタおよび前記キャパシタは、前記強誘電体メモリセルを構成している、半導体装置の製造方法。 - 請求項14〜22のいずれか一項に記載の半導体装置の製造方法において、
前記(d)工程では、前記強誘電体膜の結晶中に斜方晶が形成される、半導体装置の製造方法。
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CN106409919A (zh) * | 2015-07-30 | 2017-02-15 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
KR20170031620A (ko) * | 2015-09-11 | 2017-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
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JP2018110140A (ja) * | 2016-12-28 | 2018-07-12 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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JP7123622B2 (ja) * | 2018-05-18 | 2022-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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CN108962898B (zh) | 2023-09-01 |
US10680071B2 (en) | 2020-06-09 |
TW201901759A (zh) | 2019-01-01 |
EP3413332A2 (en) | 2018-12-12 |
US20200258990A1 (en) | 2020-08-13 |
EP3413332A3 (en) | 2019-02-20 |
TWI766017B (zh) | 2022-06-01 |
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US20180337055A1 (en) | 2018-11-22 |
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