JP6879348B2 - 感光性エレメント、積層体、永久マスクレジスト及びその製造方法並びに半導体パッケージの製造方法 - Google Patents
感光性エレメント、積層体、永久マスクレジスト及びその製造方法並びに半導体パッケージの製造方法 Download PDFInfo
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- JP6879348B2 JP6879348B2 JP2019173465A JP2019173465A JP6879348B2 JP 6879348 B2 JP6879348 B2 JP 6879348B2 JP 2019173465 A JP2019173465 A JP 2019173465A JP 2019173465 A JP2019173465 A JP 2019173465A JP 6879348 B2 JP6879348 B2 JP 6879348B2
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Description
なお、式中、Aは酸価(mgKOH/g)を示し、Vfはフェノールフタレインの滴定量(mL)を示し、Wpは測定樹脂溶液重量(g)を示し、Iは測定樹脂溶液の不揮発分の割合(質量%)を示す。
本実施形態の感光性エレメントは、半導体パッケージ用プリント配線板の永久マスクレジスト(永久レジスト層)の形成に好適に用いることができる。図1は、半導体パッケージの一実施形態を示す模式断面図である。半導体パッケージ10は、半導体チップ搭載用基板50と、半導体チップ搭載用基板50に搭載された半導体チップ120とを備える。半導体チップ搭載用基板50と半導体チップ120とは、ダイボンドフィルム又はダイボンドペーストからなる接着剤117で接着されている。半導体チップ搭載用基板50は、絶縁基板100を備え、絶縁基板100の一方面上には、ワイヤボンディング用配線端子110と、配線端子110の一部が露出する開口部が形成された永久レジスト層90が設けられ、反対側の面上には、永久レジスト層90とはんだ接続用接続端子111とが設けられている。永久レジスト層90は、上記本実施形態の感光性フィルムを用いて形成される硬化物からなる層である。はんだ接続用接続端子111は、プリント配線板との電気的な接続を行うために、はんだボール114を搭載している。半導体チップ120とワイヤボンディング用配線端子110とは、金ワイヤ115を用いて電気的に接続されている。半導体チップ120は、半導体用封止樹脂116によって封止されている。本実施形態の感光性フィルム、永久マスクレジスト若しくはその製造方法又は半導体パッケージの製造方法を用いて形成することで、異種材料(すなわち、半導体用封止樹脂116)との密着性が向上する。また、上記基板と反対側の面における該硬化物の、「基板と反対側の面」とは、異種材料と接する面を意味する。なお、本実施形態の感光性エレメントは、フリップチップタイプの半導体パッケージにも適用することができる。
分子内に少なくとも1個のエチレン性不飽和基とカルボキシル基を有する感光性プレポリマーとして、酸変性クレゾールノボラック型エポキシアクリレート「EXP−2810」(DIC株式会社製、商品名)を使用した。重量平均分子量は10000で酸価は70mgKOH/gであった。
また、フィルム化後の無機充填材の粒径はフィルムを硬化後に断面を電子顕微鏡(SEM)で観察して確認した。フィルム中に分散されている無機充填材の最大粒径が5μm以下であることを確認した。
光重合開始剤として、「DAROCURE−TPO」(BASF社製、商品名)に代えて「イルガキュア907」(2−メチル−1−(4−(メチルチオ)フェニル)−2−モルフォリノプロパン−1−オン)(BASF社製、商品名)を使用した以外は、感光性樹脂Aと同様に配合することにより感光性樹脂Bを得た。
無機充填材として、「サンプル2−N」(株式会社アドマテックス製、サンプル名、シラン化合物で表面処理したナノシリカをメチルエチルケトン中に分散させたスラリー)を用いた。サンプル2−N中の表面処理されたシリカの分散状態は、動的光散乱式ナノトラック粒度分布計「UPA−EX150」(日機装株式会社製)を用いて測定し、平均粒径が0.05μm、最大粒径は1μm以下となっていることを確認した。その他は、感光性樹脂Aと同様に配合することにより感光性樹脂Cを得た。
無機充填材を配合しなかったこと以外は、感光性樹脂Aと同様に配合することにより感光性樹脂Dを得た。
(感光性樹脂E)
光反応性化合物として、「KAYARAD DPHA」(日本化薬株式会社製、商品名)に代えて「FA−321M」(日立化成株式会社製、商品名)を使用したこと以外は、感光性樹脂Aと同様に配合することにより感光性樹脂Eを得た。
(感光性樹脂F)
分子内に少なくとも1個のエチレン性不飽和基とカルボキシル基を有する感光性プレポリマーとして、「EXP−2810」(DIC株式会社製、商品名)に代えてUXE−3024(日本化薬株式会社製、商品名)を使用したこと以外は、感光性樹脂Aと同様に配合することにより感光性樹脂Fを得た。
上記の感光性樹脂A〜Fの溶液を感光層と接する面の表面粗さが異なる以下の支持フィルム上に均一に塗布し感光層を形成した。
支持フィルムA:PET X42−26(練り込みマットタイプ)東レ株式会社製
膜厚:26μm、表面粗さRa:370nm、ヘーズ:80%
支持フィルムB:PET X44−26(練り込みマットタイプ)東レ株式会社製
膜厚:26μm、表面粗さRa:265nm、ヘーズ:77%
支持フィルムC:PET タイプA加工(サンドブラスト加工) 開成工業株式会社製
膜厚:50μm、表面粗さRa:572nm、ヘーズ:72%
支持フィルムD:PE T−5N(エンボス加工タイプ)大倉工業株式会社製
膜厚:34μm、表面粗さRa:3500nm、ヘーズ:88%
支持フィルムE:OPP MA−420 王子特殊紙株式会社製、
膜厚:35μm、表面粗さRa:100nm、ヘーズ:7.5%
支持フィルムF:PET HPE(高透明タイプ)帝人デュポンフィルム株式会社製、
膜厚:25μm、表面粗さRa:<50nm、ヘーズ:0.9%
支持フィルムG:PET タイプB加工(サンドブラスト加工) 開成工業株式会社製
膜厚:50μm、表面粗さRa:1022nm、ヘーズ:76%
支持フィルムH:PET タイプC加工(サンドブラスト加工) 開成工業株式会社製
膜厚:50μm、表面粗さRa:2339nm、ヘーズ84%
支持フィルムI:PE 試作品(エンボス加工) 大倉工業株式会社製
膜厚:34μm、表面粗さRa:4875nm、ヘーズ92%
12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(MCL−E−679、日立化成株式会社製、商品名)の銅表面を粗化前処理液CZ−8100(メック株式会社製)で処理し、水洗後、乾燥した。このプリント配線板用基板上にプレス式真空ラミネータ(MVLP−500、株式会社名機製作所製、商品名)を用いて、プレス熱板温度70℃、真空引き時間20秒、ラミネートプレス時間30秒、気圧4kPa以下、及び圧着圧力0.4MPaの条件の下、感光性フィルムの保護フィルムを剥離して積層し、評価用積層体を得た。
感度・解像性評価の項目記載の条件で、感光性フィルムを基板にラミネートした後、室温で1時間以上放置した。その後、露光を行わずに、支持フィルムを剥離、除去した際、感光層が支持フィルム側に貼り付き、基板上から剥がれてしまったものを「C」、基板上から一部剥がれてしまったものを「B」、基板上からの剥がれがないものを「A」として評価した。結果を表2及び3に示す。
上記評価用積層体の全面を露光して、現像、紫外線照射、加熱処理まで行うことで、16μm厚のポリエチレンテレフタレートフィルム(G2−16、帝人株式会社製、商品名)(支持フィルム)上に、感光性樹脂組成物の硬化物を形成し、次いで、カッターナイフで、幅3mm、長さ30mmに切り出した後、硬化物上のポリエチレンテレフタレートを剥離し、熱膨張係数評価用永久マスクレジストを得た。
感度・解像性評価の項目記載の評価用積層体にオーク製作所社製紫外線照射装置を使用して1J/cm2のエネルギー量で紫外線照射を行い、更に160℃で60分間加熱処理を行うことにより感光性絶縁膜が表面に形成された評価用基板を得た。
コア材に12μm厚の銅箔をガラスエポキシ基材に積層したプリント配線板用基板(MCL−E−679FG、日立化成株式会社、商品名)、セミアディティブ配線形成用ビルドアップ材(AS−ZII、日立化成株式会社製、商品名)を用いて、ライン/スペースが8μm/8μmのくし型電極を作製し、これを評価基板とした。
上記「評価基板の作製」と同様に感光性絶縁膜を形成した評価用積層体を、−65℃の大気中に15分間晒した後、180℃/分の昇温速度で昇温し、次いで、150℃の大気中に15分間晒した後、180℃/分の降温速度で降温する熱サイクルを1000回繰り返した。このような環境下に晒した後、評価用積層体の永久マスクレジストのクラック及び剥離程度を100倍の金属顕微鏡により観察し、次の基準で評価した。すなわち、2mm角の開口部の10箇所を確認して永久マスクレジストのクラック及び剥離を全く観察できなかったものは「A」とし、10箇所中2箇所以下でクラック及び剥離が観察されたものを「B」、10箇所中3箇所以上でクラック及び剥離が観察されたものを「C」とした。結果を表2及び3に示した。
上述した方法で得られた硬化物の表面粗さRaを、顕微鏡(株式会社キーエンス製、商品名「レーザースキャンマイクロスコープ VK−8500」)を用いて、測定範囲100μm×100μmの条件で測定した。
支持フィルムの粗さが感光層に転写されると、感光層の表面粗さが増大する。つまり良好なアンカー効果を得る事が可能となり、アンダーフィルや封止材といった半導体材料との密着性が向上したと考えられる。
Claims (15)
- 永久マスクレジスト又は層間絶縁膜形成用の感光性エレメントであって、
支持フィルムと、該支持フィルム上に設けられ、感光性樹脂組成物から形成される感光層と、を備え、
前記支持フィルムは、感光層と接する面の表面粗さがRaで500nmより大きく、4000nm以下であり、
前記感光性樹脂組成物は、平均粒径1μm以下の無機充填材を10〜90質量%含有し、
永久マスクレジスト又は層間絶縁膜形成を形成すべき基板上に、前記感光層の支持フィルムと反対側の面を貼付するための、感光性エレメント。 - 支持フィルムと、該支持フィルム上に設けられ、感光性樹脂組成物から形成される感光層と、を備える感光性エレメントであって、
前記支持フィルムは、感光層と接する面の表面粗さがRaで200〜4000nmであり、
前記感光性樹脂組成物は、平均粒径1μm以下の無機充填材を10〜90質量%含有し、
前記無機充填材は、硫酸バリウム及びシリカフィラーからなる群から選択される少なくとも一種を含む、感光性エレメント。 - 前記支持フィルムは、ヘーズが60%以上である、請求項1又は2に記載の感光性エレメント。
- 前記感光性樹脂組成物は、多官能エポキシ樹脂を含有する、請求項1〜3のいずれか一項に記載の感光性エレメント。
- 前記多官能エポキシ樹脂は、ビフェニルアラルキル型エポキシ樹脂及びエポキシ変性のポリブタジエンゴム誘導体の少なくとも一方を含有する、請求項4に記載の感光性エレメント。
- 前記感光性樹脂組成物は、(メタ)アクリロイル基を有する光反応性化合物を含有する、請求項1〜5のいずれか一項に記載の感光性エレメント。
- 前記感光性樹脂組成物は、アシルホスフィン系化合物及びチオキサントン系化合物のうち少なくとも一種を含有する、請求項1〜6のいずれか一項に記載の感光性エレメント。
- 前記感光性樹脂組成物は、2,4,6−トリメチルベンゾイル−ジフェニル−ホスフィンオキサイドを含有する、請求項1〜7のいずれか一項に記載の感光性エレメント。
- 前記感光性樹脂組成物は、2,4−ジエチルチオキサントン及び2−メチル−1−〔4−(メチルチオ)フェニル〕−2−モルホリノ−1−プロパノンの少なくとも一方を含有する、請求項1〜8のいずれか一項に記載の感光性エレメント。
- 請求項1〜9のいずれか一項に記載の感光性エレメントを用いて、基板上に感光層を形成する工程と、
感光層の所定部分に活性光線を照射し、光硬化部を形成する工程と、
前記光硬化部以外の領域を除去する工程と、を備える永久マスクレジストの形成方法。 - 前記光硬化部を形成する工程において、直接描画方式、投影露光方式又は感光層に直接接触しないようにネガマスクを配置する露光方式を用いて活性光線を照射する、請求項10に記載の永久マスクレジストの形成方法。
- 光硬化部以外の領域を除去する工程の後に、加熱する工程を更に備える、請求項9又は10に記載の永久マスクレジストの形成方法。
- 基板と、該基板上に形成されたレジストパターンと、を備え、
前記レジストパターンが、請求項1〜9のいずれか一項に記載の感光性エレメントの感光層から形成されたものである、永久マスクレジスト。 - 請求項10〜12のいずれか一項に記載の永久マスクレジストの形成方法により、永久マスクレジストが形成された基板上に、他の部材を形成する工程を備える、半導体パッケージの製造方法。
- 基板と、該基板上に感光性樹脂組成物を硬化させた硬化物を備える積層体であって、
前記硬化物が、請求項1〜9のいずれか一項に記載の感光性エレメントの感光層の前記支持フィルムと接する面と反対側の面を前記基板と接触させた状態で硬化して形成された硬化物である、積層体。
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JP5882510B2 (ja) | 2014-06-30 | 2016-03-09 | 太陽インキ製造株式会社 | 感光性ドライフィルムおよびそれを用いたプリント配線板の製造方法 |
JP6227617B2 (ja) * | 2014-06-30 | 2017-11-08 | 太陽インキ製造株式会社 | 感光性ドライフィルムおよびそれを用いたプリント配線板の製造方法 |
JP6927664B2 (ja) * | 2015-11-02 | 2021-09-01 | 互応化学工業株式会社 | 感光性樹脂組成物、ドライフィルム、プリント配線板及び感光性樹脂組成物の製造方法 |
JP6748478B2 (ja) * | 2016-04-25 | 2020-09-02 | 太陽インキ製造株式会社 | ドライフィルム、硬化物およびプリント配線板 |
DE102016109352B4 (de) * | 2016-05-20 | 2022-03-24 | Infineon Technologies Ag | Chipgehäuse und verfahren zum bilden eines chipgehäuses |
CN106226996A (zh) * | 2016-09-20 | 2016-12-14 | 深圳市容大感光科技股份有限公司 | 光致抗蚀抗电镀剂组合物、其应用及包括其膜层的基材 |
JP6175205B1 (ja) * | 2017-02-01 | 2017-08-02 | 太陽インキ製造株式会社 | 感光性フィルム、感光性フィルム積層体およびそれらを用いて形成された硬化物 |
CN108459465B (zh) * | 2017-01-17 | 2021-12-14 | 太阳油墨制造株式会社 | 感光性膜、感光性膜层积体和使用它们形成的固化物 |
JP6199524B1 (ja) * | 2017-07-03 | 2017-09-20 | 太陽インキ製造株式会社 | 感光性フィルム、感光性フィルム積層体およびそれらを用いて形成された硬化物 |
JP6199525B1 (ja) * | 2017-07-03 | 2017-09-20 | 太陽インキ製造株式会社 | 感光性フィルム、感光性フィルム積層体およびそれらを用いて形成された硬化物 |
KR102216172B1 (ko) * | 2017-07-14 | 2021-02-15 | 주식회사 엘지화학 | 절연층 제조방법 및 반도체 패키지 제조방법 |
JP7104776B2 (ja) * | 2017-08-14 | 2022-07-21 | ▲寧▼波舜宇光▲電▼信息有限公司 | イメージングアセンブリとその製造方法、及びモールド金型、撮像モジュールとスマート端末 |
WO2019124307A1 (ja) * | 2017-12-20 | 2019-06-27 | 住友電気工業株式会社 | プリント配線板の製造方法及び積層体 |
JP6825580B2 (ja) * | 2018-01-12 | 2021-02-03 | 味の素株式会社 | プリント配線板の製造方法 |
JP7113644B2 (ja) * | 2018-03-30 | 2022-08-05 | 太陽インキ製造株式会社 | ドライフィルム、硬化物およびプリント配線板 |
JP2019178305A (ja) * | 2018-03-30 | 2019-10-17 | 太陽インキ製造株式会社 | 硬化性樹脂組成物、該組成物からなるドライフィルム、硬化物および該硬化物を有するプリント配線板 |
CN112352198B (zh) * | 2018-05-16 | 2024-08-16 | 株式会社力森诺科 | 感光性膜及永久遮罩阻剂的形成方法 |
TW202102938A (zh) * | 2019-03-29 | 2021-01-16 | 日商太陽油墨製造股份有限公司 | 光阻組成物及其硬化物 |
KR20220016025A (ko) * | 2019-05-31 | 2022-02-08 | 쇼와덴코머티리얼즈가부시끼가이샤 | 감광성 수지 조성물, 감광성 수지 필름, 다층 프린트 배선판 및 반도체 패키지, 및 다층 프린트 배선판의 제조 방법 |
JPWO2022138246A1 (ja) * | 2020-12-25 | 2022-06-30 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3406544B2 (ja) * | 1999-03-18 | 2003-05-12 | 日立化成工業株式会社 | 感光性エレメント、これを用いたレジストパターンの製造法、プリント配線板の製造法及びリードフレームの製造法 |
KR100599219B1 (ko) * | 1999-06-24 | 2006-07-12 | 히다치 가세고교 가부시끼가이샤 | 감광성 엘리먼트, 감광성 엘리먼트롤, 이것을 사용한레지스트패턴의 제조법, 레지스트패턴, 레지스트패턴적층기판, 배선패턴의 제조법 및 배선패턴 |
JP4666754B2 (ja) | 2000-12-12 | 2011-04-06 | 太陽ホールディングス株式会社 | 多層プリント配線板用ドライフィルム及びそれを用いた多層プリント配線板の製造方法 |
JP2005221842A (ja) * | 2004-02-06 | 2005-08-18 | Lintec Corp | マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法 |
JP4485239B2 (ja) * | 2004-04-01 | 2010-06-16 | 富士フイルム株式会社 | パターン形成方法 |
US7449280B2 (en) * | 2004-05-26 | 2008-11-11 | Microchem Corp. | Photoimageable coating composition and composite article thereof |
KR20070031403A (ko) * | 2004-06-21 | 2007-03-19 | 제이에스알 가부시끼가이샤 | 무기 분체 함유 수지 조성물, 전사 필름 및 플라즈마디스플레이 패널용 부재의 제조 방법 |
JP2007041493A (ja) * | 2004-10-20 | 2007-02-15 | Mitsubishi Chemicals Corp | 感光性組成物、及び青紫色レーザー用感光性組成物並びにそれを用いた画像形成材料、画像形成材、及び画像形成方法 |
JP2006154622A (ja) * | 2004-12-01 | 2006-06-15 | Fuji Photo Film Co Ltd | パターン形成材料及びパターン形成方法 |
JP2006201546A (ja) | 2005-01-21 | 2006-08-03 | Showa Denko Kk | フォトレジストフィルム |
JP2006220886A (ja) * | 2005-02-10 | 2006-08-24 | Showa Denko Kk | プリント配線板保護膜用感光性ドライフィルム、その製造方法およびプリント配線板 |
JP2007178500A (ja) * | 2005-12-27 | 2007-07-12 | Fujifilm Corp | 感光性フイルム、並びに、永久パターン及びその形成方法 |
JP2009014745A (ja) * | 2006-03-16 | 2009-01-22 | Fujifilm Holdings Corp | 感光性組成物、感光性フィルム、感光性積層体、永久パターン形成方法、及びプリント基板 |
TW200745631A (en) * | 2006-05-09 | 2007-12-16 | Fujifilm Corp | Photosensitive thermal transferable material, image forming method, display device, color filter, and display apparatus |
JP2007322485A (ja) * | 2006-05-30 | 2007-12-13 | Nippon Sheet Glass Co Ltd | 遮光隔壁形成用のアルカリ現像型黒色感光性樹脂組成物 |
JP5257648B2 (ja) * | 2007-11-27 | 2013-08-07 | 日立化成株式会社 | 感光性エレメント及びその製造方法 |
CN102138104B (zh) * | 2008-09-04 | 2013-01-23 | 日立化成工业株式会社 | 半导体封装用印刷电路板的保护膜用感光性树脂组合物 |
JP2010085513A (ja) * | 2008-09-30 | 2010-04-15 | Toyo Ink Mfg Co Ltd | 感光性ドライフィルム |
US20110318539A1 (en) * | 2009-03-03 | 2011-12-29 | Satoru Ozawa | Process for producing film |
JP5658435B2 (ja) * | 2009-03-31 | 2015-01-28 | リンテック株式会社 | マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法 |
JP5472692B2 (ja) | 2009-07-06 | 2014-04-16 | 日立化成株式会社 | アルカリ現像可能な感光性樹脂組成物及びそれを用いた感光性フィルム |
JP2012027368A (ja) * | 2010-07-27 | 2012-02-09 | Hitachi Chem Co Ltd | 感光性フィルム |
CN107422606A (zh) * | 2010-12-16 | 2017-12-01 | 日立化成株式会社 | 感光性元件、抗蚀图案的形成方法以及印刷布线板的制造方法 |
KR102003575B1 (ko) * | 2011-08-10 | 2019-07-24 | 히타치가세이가부시끼가이샤 | 감광성 수지 조성물, 감광성 필름, 영구 레지스터 및 영구 레지스터의 제조 방법 |
JP6229256B2 (ja) * | 2011-10-31 | 2017-11-15 | 日立化成株式会社 | 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
KR20130047656A (ko) * | 2011-10-31 | 2013-05-08 | 히타치가세이가부시끼가이샤 | 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성 방법 및 인쇄 배선판의 제조 방법 |
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