JP6670672B2 - エッチング方法 - Google Patents
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- JP6670672B2 JP6670672B2 JP2016094659A JP2016094659A JP6670672B2 JP 6670672 B2 JP6670672 B2 JP 6670672B2 JP 2016094659 A JP2016094659 A JP 2016094659A JP 2016094659 A JP2016094659 A JP 2016094659A JP 6670672 B2 JP6670672 B2 JP 6670672B2
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- 238000005530 etching Methods 0.000 title claims description 84
- 238000000034 method Methods 0.000 title claims description 39
- 238000012545 processing Methods 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 94
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 239000002826 coolant Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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Description
Claims (7)
- 窒化シリコン領域と、
前記窒化シリコン領域と異なる組成を有するシリコン含有領域と、
を備える被処理体を、処理容器内に収容し、前記窒化シリコン領域を選択的にエッチングする方法であって、
前記処理容器内においてハイドロフルオロカーボンガスを含む処理ガスのプラズマを生成して、前記窒化シリコン領域及び前記シリコン含有領域上にハイドロフルオロカーボンを含む堆積物を形成する第1工程と、
前記堆積物をスパッタし、前記堆積物に含まれるハイドロフルオロカーボンのラジカルによって、前記窒化シリコン領域をエッチングする第2工程と、
を備え、
前記第1工程において、前記窒化シリコン領域上に形成される前記堆積物の堆積量は前記シリコン含有領域上に形成される前記堆積物の堆積量よりも少なく、
前記第1工程及び前記第2工程を交互に繰り返す、
エッチング方法。 - 前記シリコン含有領域は、SiC、SiOC、SiON、SiCN、SiOCN及びSiO2からなる群から選択される少なくとも1種のシリコン化合物を含む、請求項1に記載のエッチング方法。
- 前記ハイドロフルオロカーボンガスは、CH3F、CH2F2、CHF3からなる群から選択される少なくとも1種のガスを含む、請求項1又は2に記載のエッチング方法。
- 前記窒化シリコン領域のエッチング量が、前記シリコン含有領域のエッチング量の5倍以上となるように、前記第1工程の期間と、前記第2工程の期間との比率を設定する、
請求項1乃至3のいずれか一項に記載のエッチング方法。 - 前記第2工程は、希ガスのプラズマに前記堆積物を晒すことで、前記堆積物に含まれるハイドロフルオロカーボンのラジカルを発生させる、
請求項1乃至4のいずれか一項に記載のエッチング方法。 - 前記処理ガスは、実質的に酸素含まない、
請求項1乃至5のいずれか一項に記載のエッチング方法。 - 前記処理ガス内の酸素ガス濃度は2.0×10 −10 mol/cm 3 以下である、
請求項6に記載のエッチング方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016094659A JP6670672B2 (ja) | 2016-05-10 | 2016-05-10 | エッチング方法 |
TW106114030A TWI707396B (zh) | 2016-05-10 | 2017-04-27 | 蝕刻方法 |
PCT/JP2017/017273 WO2017195709A1 (ja) | 2016-05-10 | 2017-05-02 | エッチング方法 |
CN201780028484.2A CN109075068B (zh) | 2016-05-10 | 2017-05-02 | 蚀刻方法 |
US16/069,723 US11107692B2 (en) | 2016-05-10 | 2017-05-02 | Etching method |
KR1020187019989A KR102364188B1 (ko) | 2016-05-10 | 2017-05-02 | 에칭 방법 |
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JP2016094659A JP6670672B2 (ja) | 2016-05-10 | 2016-05-10 | エッチング方法 |
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JP2017204531A JP2017204531A (ja) | 2017-11-16 |
JP6670672B2 true JP6670672B2 (ja) | 2020-03-25 |
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JP2016094659A Active JP6670672B2 (ja) | 2016-05-10 | 2016-05-10 | エッチング方法 |
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US (1) | US11107692B2 (ja) |
JP (1) | JP6670672B2 (ja) |
KR (1) | KR102364188B1 (ja) |
CN (1) | CN109075068B (ja) |
TW (1) | TWI707396B (ja) |
WO (1) | WO2017195709A1 (ja) |
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JP6811202B2 (ja) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
KR20200088769A (ko) | 2019-01-15 | 2020-07-23 | 타이코에이엠피 주식회사 | 커넥터 어셈블리 및 이를 구비하는 전자기기 |
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JP3681533B2 (ja) | 1997-02-25 | 2005-08-10 | 富士通株式会社 | 窒化シリコン層のエッチング方法及び半導体装置の製造方法 |
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JP6315809B2 (ja) * | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
CN104332392B (zh) * | 2014-09-04 | 2017-04-05 | 北方广微科技有限公司 | 一种各向异性干法刻蚀vo2的方法 |
JP2016058590A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US9911620B2 (en) * | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
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