TWI666290B - Die-bond film, die-bonded film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Abstract

The present invention provides a die-bond film that can easily confirm the cracking of a semiconductor wafer. A viscous crystal film characterized in that the light transmittance at a wavelength of 400 nm before heat curing is set to T1 (%), and the light transmittance at a wavelength of 400 nm after heating at 120 ° C for 1 hour is set to T2 ( %), T1 is 80% or more, and the difference (T1-T2) between T1 and T2 is 20% or less.

Description

Die bond film, die bond film with dicing sheet, semiconductor device, and method for manufacturing semiconductor device

The present invention relates to a sticky crystal film, a sticky crystal film with a dicing sheet, a semiconductor device, and a method for manufacturing a semiconductor device.

Conventionally, in the manufacturing process of a semiconductor device, a silver paste is used when a semiconductor wafer is fixed to an adherend such as a lead frame. This fixing process is performed by applying a paste-like adhesive to a lead pad or the like, mounting a semiconductor wafer thereon, and curing the paste-like adhesive layer.

However, the paste-like adhesive agent has a large deviation from the application amount and the application shape according to its viscosity behavior or deterioration. As a result, the thickness of the formed adhesive is not uniform, so the reliability of the adhesion strength of the semiconductor wafer is insufficient. For example, when the application amount of the paste-like adhesive is insufficient, the adhesion strength between the semiconductor wafer and the adherend is reduced, and the semiconductor wafer is peeled in a subsequent wire bonding step. On the other hand, when the application amount of the paste-like adhesive is too large, the paste-like adhesive is cast onto the semiconductor wafer, resulting in poor characteristics, and yield or reliability is reduced. The problems in this fixation process The increase in size of the conductor wafer is particularly significant.

In the step of applying the paste-like adhesive, there is a method of separately applying the paste-like adhesive to a lead frame or forming a wafer. However, this method is difficult to achieve uniformity of the paste-like adhesive layer, and the application of the paste-like adhesive requires a special device or a long time. Therefore, conventionally, a die-bonding film having an adhesive layer for fixing a semiconductor wafer has been proposed (for example, refer to Patent Document 1).

After the die-bond film is attached to the semiconductor wafer and cut together with the semiconductor wafer, it is peeled from the dicing tape together with the formed semiconductor wafer. After that, the semiconductor wafer is fixed to the adherend via the die-bonding film.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 05-179211

The present inventors have studied a semiconductor device manufactured using the above-mentioned sticky crystal thin film. As a result, it was found that the back surface of the semiconductor wafer was covered with a sticky crystal film, and therefore, it was difficult to detect even if chipping occurred.

The present invention has been made in view of the foregoing problems, and an object thereof is to provide a die-bond film capable of easily confirming cracking of a semiconductor wafer and a die-bond film with a dicing sheet. The present invention also provides a semiconductor device manufactured using the die-bonding film or the die-bonding film with a dicing sheet. In addition, The purpose is to provide a method for manufacturing a semiconductor device using the die-bonding thin film with a dicing sheet.

The present inventors have conducted intensive studies in order to solve the problems. As a result, it was found that cracking of a semiconductor wafer can be easily confirmed by using a sticky crystal film having the following structure, and the present invention has been completed.

That is, the viscous crystal film of the present invention is characterized in that the light transmittance at a wavelength of 400 nm before thermal curing is set to T1 (%), and the light transmittance at a wavelength of 400 nm after heating at 120 ° C. for 1 hour is characterized in that When T2 (%) is set, the T1 is 80% or more, and the difference (T1-T2) between the T1 and the T2 is 20% or less.

According to the foregoing configuration, the T1 (%) is 80% or more. Therefore, the semiconductor can be easily found in a state in which the die-bond film is adhered to the back surface of the semiconductor wafer, and in a state before thermal curing (for example, a state after dicing). Whether the back or side of the wafer is cracked.

In addition, since the difference (T1-T2) between the T1 and the T2 is 20% or less, it also has a certain degree of light transmittance after heat curing (for example, after heating at 120 ° C for 1 hour). Therefore, even in the state after the thermosetting, it can be easily found whether or not there is cracking on the back or side of the semiconductor wafer.

As described above, according to the present invention, it is possible to easily find whether or not a crack exists on the back surface or the side surface of the semiconductor wafer in both the states before and after the thermosetting.

In addition, after the process accompanying the thermal history, such as die bonding or wire bonding, the void of the die bonding film can be visually confirmed.

In the foregoing configuration, it is preferable that a ratio T2 / T1 of the T1 to the T2 is in a range of 0.75 to 1.0.

When the aforementioned ratio T2 / T1 is in the range of 0.75 to 1.0, after heat curing (after heating at 120 ° C for 1 hour), it also has a certain degree of light transmittance as compared with before heat curing. Therefore, in the state after the thermosetting, it can be more easily found whether there is a crack on the back surface or the side surface of the semiconductor wafer.

In addition, after a process accompanied by a thermal history, such as die bonding or wire bonding, it is easier to visually confirm the voids of the die bonding film.

In addition, according to the present invention, the die-bonded thin film with a dicing sheet is a die-bonded thin film with a dicing sheet provided with the aforementioned dicing film on the dicing sheet, wherein the transmittance of the dicing sheet at a wavelength of 400 nm is greater than 80%.

According to the foregoing configuration, the light transmittance of the dicing sheet at a wavelength of 400 nm is greater than 80%. Therefore, it can be easily found whether the back or side of the semiconductor wafer is in a state in which the aforementioned die-bonded thin film with the dicing sheet is attached to the back of the semiconductor wafer. There is cracking.

In the aforementioned configuration, the light transmittance of the aforementioned die-bonded thin film with a dicing sheet before thermal curing at a wavelength of 400 nm is preferably greater than 50%.

If the light transmittance of the die-bonded film with a dicing sheet before heat curing is greater than 50% at a wavelength of 400 nm, it may be easier in a state where the die-bonded film with a dicing sheet is adhered to the back of a semiconductor wafer. It was found whether there was a crack on the back or side of the semiconductor wafer.

In the said structure, it is preferable that the said sticky-crystal film contains an acrylic copolymer of 50 weight% or more with respect to all the organic resin components.

If the aforementioned viscous thin film contains 50% by weight or more of an acrylic copolymer with respect to all organic resin components, the light transmittance of the viscous thin film at a wavelength of 400 nm can be increased before and after heat curing.

In the above configuration, it is preferable that the viscous crystal film contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more.

If the viscous crystal film contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more, it can be further improved. Light transmittance of a sticky crystal film at a wavelength of 400 nm.

In the above configuration, it is preferable that the dicing sheet is composed of a base material and an adhesive layer, the adhesive layer contains an acrylic copolymer, and the acrylic copolymer contains an alkyl acrylate or 50% by weight or more. It is obtained by polymerizing a monomer raw material of an alkyl methacrylate.

If the adhesive layer contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more, the aforementioned can be improved. Light transmittance of the adhesive layer at a wavelength of 400 nm.

In the said structure, it is preferable that the said sticky crystal film contains at least 1 sort (s) selected from alicyclic epoxy resin and alicyclic acid anhydride as a thermosetting resin.

When the viscous crystal film contains at least one selected from the group consisting of an alicyclic epoxy resin and an alicyclic acid anhydride as a thermosetting resin, yellowing and the like can be suppressed after thermal curing, and the viscous crystals after thermal curing can be suppressed. The light transmittance of the film was kept high at a wavelength of 400 nm.

In the aforementioned configuration, the loss elastic modulus of the viscous crystal film at 120 ° C. is preferably 0.05 to 0.5 MPa.

If the loss elastic modulus of the above-mentioned viscous crystal film at 120 ° C. is 0.05 MPa or more, wire bonding can be easily performed. On the other hand, if the loss elastic modulus of the viscous crystal film at 120 ° C. is 0.5 MPa or less, the adhesion to the adherend can be improved.

In addition, the semiconductor device of the present invention is characterized in that it is manufactured using the die-bond film described in the above or the die-bond film with a dicing sheet described in the above.

In addition, the method for manufacturing a semiconductor device according to the present invention is characterized by including a preparation step, preparing the die-bonding film with a dicing sheet described in the foregoing, and bonding steps, and bonding the die-bonding film with the dicing sheet. A step of bonding and dicing the thin film with the back surface of the semiconductor wafer, cutting the semiconductor wafer and the die-bond film together to form a wafer-shaped semiconductor wafer, and a step of picking up the semiconductor wafer from the die-bond film together Picking up the sticky crystal film with a cutting sheet, and sticking the crystals to the sticky substrate through the aforementioned sticky film. Semiconductor wafer.

According to the foregoing configuration, the light-transmitting film T1 has a light transmittance T1 of 80% or more at a wavelength of 400 nm before being thermally cured. In the subsequent state), it can be easily found whether the back or side of the semiconductor wafer is cracked.

In addition, since the difference (T1-T2) between the T1 and the T2 is 20% or less, it also has a certain degree of light transmittance after heat curing (after heating at 120 ° C for 1 hour). Therefore, even in the state after the thermosetting, it can be easily found whether or not there is cracking on the back or side of the semiconductor wafer.

10‧‧‧ Adhesive film with cutting sheet

11‧‧‧cut piece

12‧‧‧ substrate

14‧‧‧ Adhesive layer

16‧‧‧ Sticky Crystal Film

4‧‧‧ semiconductor wafer

5‧‧‧ semiconductor wafer

6‧‧‧ Adhesive

7‧‧‧ welding wire

8‧‧‧sealing resin

[Fig. 1] A schematic cross-sectional view showing a die-bonding film with a dicing sheet according to an embodiment of the present invention.

[Fig. 2] A schematic cross-sectional view for explaining a method for manufacturing a semiconductor device according to this embodiment.

(Crystalline film with cutting sheet)

Hereinafter, a die-bonding film and a die-bonding film with a dicing sheet according to an embodiment of the present invention will be described. Regarding the die-bonding film of the present embodiment, a state in which a dicing sheet is not bonded to the die-bonding film with a dicing sheet described below is mentioned. Therefore, in the following, The sticky crystal film will be described, and the sticky crystal film will be described therein. FIG. 1 is a schematic cross-sectional view showing a die-bonding film with a dicing sheet according to an embodiment of the present invention.

As shown in FIG. 1, the die-bonding thin film 10 with a dicing sheet has a structure in which a die-bonding thin film 16 is laminated on the dicing sheet 11. The dicing sheet 11 is configured by laminating an adhesive layer 14 on a base material 12, and a die-bonding film 16 is provided on the adhesive layer 14.

In this embodiment, a case where the cutting sheet 11 has a portion 14b not covered by the die-bonding film 16 will be described. However, the die-bonding film with a dicing sheet of the present invention is not limited to this example. A die-bonding film is laminated on the dicing sheet to cover the entire dicing sheet.

Regarding the viscous thin film 16, when the light transmittance at a wavelength of 400 nm before thermal curing is set to T1 (%) and the light transmittance at a wavelength of 400 nm is set to T2 (%) after heating at 120 ° C for 1 hour, The aforementioned T1 is 80% or more, 82% or more is preferable, and 85% or more is more preferable. The aforementioned T1 (%) is 80% or more. Therefore, in a state where the die-bond film 16 is adhered to the back surface of the semiconductor wafer and in a state before thermal curing (for example, a state after dicing), the back surface of the semiconductor wafer or the Whether there are cracks on the sides.

The higher T1 is, the better, for example, it can be set to 100% or less.

The reason why the light transmittance at a wavelength of 400 nm is used is to achieve a standard for visual confirmation.

The aforementioned light transmittances T1 and T2 can be controlled via a material constituting the viscous thin film 16. For example, the type or content of the thermoplastic resin, the type or content of the thermosetting agent, and the level of the filler may be appropriately selected through appropriate selection. The average particle size or content is controlled.

The light transmittance (%) of the viscous crystal film at a wavelength of 400 nm was determined under the following conditions.

<Transmittance measurement conditions>

Measuring device: UV-Vis near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)

Wavelength scanning speed: 2000nm / minute

Measurement range: 300 ~ 1200nm

Integrating sphere unit: ISN-723

Point diameter: 1cm square

In addition, for the die-bond thin film 16, the difference (T1-T2) between the T1 and the T2 is 20% or less, preferably 18% or less, and more preferably 15% or less. The difference (T1-T2) between the T1 and the T2 is 20% or less. Therefore, it also has a certain degree of light transmission after heat curing (after heating at 120 ° C for 1 hour). Therefore, in the state after the thermosetting, it can be easily found whether or not there is cracking on the back or side of the semiconductor wafer.

In addition, in the process accompanying the thermal history, for example, after the die bond and wire bonding, the voids of the die bond film can be visually confirmed.

The smaller the difference (T1-T2), the better, and it can be set to, for example, 0% or more.

In addition, for the viscous thin film 16, the ratio T2 / T1 of the aforementioned T1 to the aforementioned T2 is preferably in a range of 0.75 to 1.0, more preferably in a range of 0.80 to 0.98, and more preferably in a range of 0.85 to 0.95. . If the aforementioned ratio T2 / T1 is in the range of 0.75 to 1.0, after heat curing (add at 120 ° C) After 1 hour of heat), it also has a certain degree of light transmission compared to before heat curing. Therefore, in the state after the thermosetting, it can be easily found whether the back surface and the side surface of the semiconductor wafer are cracked. In addition, in the process accompanying the thermal history, for example, after the die bond and wire bonding, the voids of the die bond film can be visually confirmed.

In addition, for the viscous thin film 16, the loss elastic modulus at 120 ° C. is preferably 0.05 to 0.5 MPa, 0.07 to 0.4 MPa is more preferable, and 0.09 to 0.3 MPa is more preferable. When the loss elastic modulus of the die-bond film 16 at 120 ° C. is 0.05 MPa or more, the wire bondability can be improved. On the other hand, if the loss elastic modulus at 120 ° C. of the viscous crystal film 16 is 0.5 MPa or less, the adhesion to the adherend can be improved.

The aforementioned loss elastic modulus can be controlled by the material constituting the viscous crystal film 16. For example, it can be controlled by appropriately selecting the type or content of the thermoplastic resin constituting the viscous thin film 16, the type or content of the thermosetting agent, and the average particle diameter or content of the filler.

Examples of the material constituting the die-bond film 16 include a thermosetting resin. In addition, a thermoplastic resin and a thermosetting resin may be used in combination.

Examples of the thermosetting resin include a novolac resin, an amine-based resin, an unsaturated polyester resin, an epoxy resin, a urethane resin, a polysiloxane resin, a thermosetting polyimide resin, and an alicyclic ring. Formula anhydride and so on. These resins can be used alone or in combination of two or more. In particular, an epoxy resin having a low content of ionic impurities and the like that erode a semiconductor element is preferred. In addition, as the hardener of the epoxy resin, a novolac resin is preferable.

The epoxy resin is not particularly limited as long as it is an epoxy resin generally used as an adhesive for sticky crystal applications. For example, bisphenol A type, bisphenol F type, bisphenol S type, and brominated bisphenol A can be used. Type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trishydroxyphenylmethane type, tetrakis (hydroxyphenyl) ethane Epoxy resins, such as bifunctional epoxy resins and polyfunctional epoxy resins such as hydantoin, triglycidyl isocyanurate, and glycidylamine. In addition, an alicyclic epoxy resin can be used. They can be used alone or in combination of two or more. Among these epoxy resins, an alicyclic epoxy resin is preferable. The alicyclic epoxy resin is not easily oxidized, and can suppress yellowing and the like after thermal curing. Examples of the alicyclic epoxy resin include a hydrogenated bisphenol epoxy resin.

The novolak resin functions as a hardener for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol aralkyl resin, a cresol novolac resin, a third butyl novolac resin, and a nonylphenol novolac. Novolac-type novolac resins such as varnish resins, resol-type novolac-type novolac resins, polyhydroxystyrenes such as polyparahydroxystyrene, and the like. They can be used alone or in combination of two or more.

The blending ratio of the epoxy resin and the novolac resin is preferably blended such that the hydroxyl group in the novolac resin is 0.5 to 2.0 equivalents with respect to 1 equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, if the blending ratio of the two is outside the aforementioned range, the curing reaction does not proceed sufficiently, and the characteristics of the cured epoxy resin are liable to deteriorate.

The alicyclic acid anhydride functions as a curing agent for the epoxy resin, and examples thereof include hexahydrophthalic anhydride. The alicyclic acid anhydride is not easily oxidized, and can suppress yellowing and the like from occurring after thermal curing.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, neoprene, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, and polybutylene Diene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT , Polyimide, imine resin or fluororesin. These thermoplastic resins can be used alone or in combination of two or more. Among these thermoplastic resins, acrylic resins which have few ionic impurities, high heat resistance, and can ensure the reliability of semiconductor elements are particularly preferable.

The acrylic resin is not particularly limited, and examples thereof include esters of acrylic acid or methacrylic acid having one or two or more kinds of linear or branched alkyl groups having a carbon number of 30 or less, particularly 4 to 18 carbon atoms. A polymer (acrylic copolymer) or the like (alkyl acrylate or alkyl methacrylate) as a component. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, third butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, and cyclohexyl , 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, Octadecyl, or dodecyl.

Among them, the viscous thin film 16 contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more. The aforementioned ratio is preferably 55% by weight or more, and more preferably 60% by weight or more. If the viscous crystal film 16 contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more, the viscosity can be increased. The light transmittance of the crystalline thin film 16 at a wavelength of 400 nm.

The larger the ratio, the better, but it can be set to 100% by weight or less, for example.

The other monomers forming the polymer are not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl-containing monomers such as acids; acid anhydride monomers such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Ester, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or acrylic acid (4- Hydroxyl-containing monomers such as hydroxymethylcyclohexyl) methyl ester; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, (meth) acrylamido Sulfonic acid group-containing monomers such as propanesulfonic acid, sulfopropyl (meth) acrylate, or (meth) acrylic acid naphthalenesulfonic acid; or phosphoric acid group-containing monomers such as acrylic acid 2-hydroxyethyl phosphate.

As the blending ratio of the thermosetting resin, if it is The degree to which the viscous thin film 16 exhibits a function as a thermosetting type when heated under prescribed conditions is not particularly limited, but it is preferably in the range of 1 to 60% by weight with respect to the entire viscous thin film 16, and more preferably Within the range of 5 to 50% by weight.

The blending ratio of the thermoplastic resin is not particularly limited, but from the viewpoint of flexibility and transparency, it is preferably 10% by weight or more, and more preferably 15% by weight or more, with respect to the whole of the viscous thin film 16. In addition, from the viewpoint of heat resistance, it is preferably 100% by weight or less, and more preferably 90% by weight or less, based on the entire die-bond film 16.

Among them, it is preferable that the viscous crystal film 16 contains 50% by weight or more of the acrylic copolymer with respect to all the organic resin components, more preferably 55% by weight or more, and more preferably 60% by weight or more. If the viscous thin film 16 contains 50% by weight or more of an acrylic copolymer relative to all organic resin components, the light transmittance of the viscous thin film 16 at a wavelength of 400 nm can be increased before and after heat curing.

When the viscous thin film 16 is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer or the like may be added in advance as a crosslinking agent during production. This can improve the adhesion characteristics at high temperatures and improve the heat resistance.

As said crosslinking agent, the conventionally well-known thing can be used. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and addition products of polyols and diisocyanates are preferred. The addition amount as a crosslinking agent is generally set to 0.05 to 7 based on 100 parts by weight of the polymer. Part by weight is preferred. When the amount of the cross-linking agent exceeds 7 parts by weight, the adhesive force decreases, which is not preferable. On the other hand, when the content is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, if necessary, other polyfunctional compounds, such as an epoxy resin, may be contained with such a polyisocyanate compound.

In addition, a filler may be appropriately blended in the die-casting film 16 according to its use. The blending of the aforementioned fillers can impart electrical conductivity, improve thermal conductivity, adjust elastic modulus, and the like. Examples of the filler include inorganic fillers and organic fillers, but inorganic fillers are preferred from the viewpoints of improving workability, improving thermal conductivity, adjusting melt viscosity, and imparting thixotropy. The shape of the filler is not particularly limited, but a spherical shape is preferred. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whisker, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide, etc. They can be used alone or in combination of two or more. From the viewpoint of improving thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide are preferred. In addition, from the viewpoint of high balance of the above characteristics, crystalline silicon dioxide or amorphous silicon dioxide. In addition, for the purpose of providing conductivity, improving thermal conductivity, and the like, a conductive substance (conductive filler) may be used as the inorganic filler. Examples of the conductive filler include metal powders made of silver, aluminum, gold, copper, nickel, and conductive alloys in the form of balls, needles, and flakes, metal oxides such as alumina, amorphous carbon black, Graphite, etc.

The average particle diameter of the filler is preferably in a range of 0.001 μm to 0.8 μm, more preferably in a range of 0.005 μm to 0.7 μm, and more preferably Within the range of 0.01 μm to 0.5 μm. If an inorganic filler having an average particle diameter in the range of 0.001 μm to 0.8 μm is contained, the light transmittance of the viscous thin film 16 at a wavelength of 400 nm can be maintained high. In addition, in this specification, the average particle diameter of a filler is the value calculated | required by the photometer type distribution meter (made by HORIBA, apparatus name; LA-910).

The amount of the filler to be added is preferably 0 to 50% by weight, and more preferably 1 to 30% by weight, relative to the whole of the viscous crystal film 16.

Further, in addition to the filler described above, other additives may be appropriately added to the die-casting film 16 as needed. Examples of the other additives include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These may be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxy Propylmethyldiethoxysilane and the like. These compounds may be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These substances may be used alone or in combination of two or more.

The thickness (total thickness in the case of a laminated body) of the viscous thin film 16 is not particularly limited, but from the viewpoint of light transmittance, 5 to 100 μm is preferable, 5 to 60 μm is preferable, and 5 to 30 μm is more preferable.

As described above, the dicing sheet 11 has a configuration in which the adhesive layer 14 is laminated on the base material 12.

The light transmittance of the dicing sheet 11 at a wavelength of 400 nm is greater than 80% More preferably, it is more than 82%, more preferably, it is more than 85%. If the light transmittance of the dicing sheet 11 at a wavelength of 400 nm is greater than 80%, it can be easily found whether there is cracking on the back and side surfaces of the semiconductor wafer in a state where the die-bonding thin film 10 with the dicing sheet is adhered to the back of the semiconductor wafer. .

The light transmittance of the dicing sheet at a wavelength of 400 nm is obtained by the same method as the light transmittance of the viscous crystal film at a wavelength of 400 nm.

The aforementioned light transmittance can be controlled via a material constituting the dicing sheet 11. For example, it can be controlled by appropriately selecting the material and content of the base material 12 and the type and content of the material of the adhesive layer 14.

The base material 12 becomes a strength matrix of the die-bonding thin film 10 with a dicing sheet. Examples include: low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, polypropylene random copolymer, polypropylene block copolymer, and polypropylene homopolymer Materials, polyolefins such as polybutene, polymethylpentene, ethylene-vinyl acetate copolymers, ionic polymer resins, ethylene- (meth) acrylic copolymers, ethylene- (meth) acrylates (random , Alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyethylene terephthalate, polyethylene naphthalate, etc. polyester, polycarbonate, poly Polyimide, polyetheretherketone, polyetherimide, polyimide, fully aromatic polyimide, polyphenylene sulfide, aromatic polyimide (paper), glass, glass cloth, fluororesin, polyimide Vinyl chloride, polyvinylidene chloride, cellulose resin, polysiloxane resin, metal (foil), etc. In the case where the adhesive layer 14 described later is formed of a radiation-curable adhesive, the base material 12 is preferably formed of a material that transmits the radiation.

In order to improve the adhesion and retention with the adjacent layer, the surface of the substrate 12 may be subjected to conventional surface treatments, such as chemical or physical treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, ionizing radiation treatment, A primer (for example, an adhesive substance described later) is applied. The base material 12 may be selected and used as appropriate, and a plurality of materials may be mixed and used as required.

The transmittance of the substrate 12 at a wavelength of 400 nm is preferably 80% or more, and more preferably 82% or more. The base material 12 having a light transmittance of 80% or more at a wavelength of 400 nm can be obtained by appropriately selecting a material constituting the base material 12.

In addition, the higher the light transmittance of the base material 12 at a wavelength of 400 nm, the better, but it may be set to 100% or less, for example.

The light transmittance of the substrate at a wavelength of 400 nm is obtained by the same method as the light transmittance of the viscous crystal film at a wavelength of 400 nm.

The thickness of the substrate 12 can be appropriately determined without any particular limitation, but is generally about 5 to 200 μm. Among them, 50 to 150 μm is preferred from the viewpoint of light transmittance.

The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 14 is not particularly limited. For example, a general pressure-sensitive pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, from the viewpoints of cleanliness and washability of ultra-pure water and organic solvents such as alcohol, such as semiconductor wafers and glass to avoid contamination of electronic parts, acrylic polymers based on acrylic polymers Adhesives are preferred.

Examples of the acrylic polymer include, for example, use Alkyl (meth) acrylates (e.g. methyl, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third butyl, pentyl, isoamyl, hexyl , Heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl (Ester, hexadecyl ester, octadecyl ester, eicosyl ester, and other alkyl groups having 1 to 30 carbon atoms, especially linear or branched alkyl esters having 4 to 18 carbon atoms, etc.) And acrylic polymers such as one or two or more of cycloalkyl (meth) acrylates (for example, cyclopentyl ester, cyclohexyl ester, etc.) as monomer components. In addition, (meth) acrylate means an acrylate and / or a methacrylate, and all (meth) of this invention has the same meaning.

The adhesive layer 14 contains an acrylic copolymer, and the acrylic copolymer contains an alkyl acrylate or an alkyl methacrylate (an ester of acrylic acid or an ester of methacrylic acid) in an amount of 50% by weight or more. It is preferable to obtain the monomer raw material by polymerization. The aforementioned ratio is preferably 55% by weight or more, and more preferably 60% by weight or more. When the adhesive layer 14 contains an acrylic copolymer, and the acrylic copolymer is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more, adhesion can be improved. The light transmittance of the agent layer 14 at a wavelength of 400 nm.

The larger the ratio, the better, but it can be set to 100% by weight or less, for example.

In order to improve cohesion, heat resistance, and the like, the acrylic polymer may contain a unit corresponding to another monomer component that can be copolymerized with the alkyl (meth) acrylate or cycloalkyl ester as necessary. As this Examples of such monomer components include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl monomers; anhydride monomers such as maleic anhydride, itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate Ester, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (Meth) acrylic acid- (4-hydroxymethylcyclohexyl) methyl ester and other hydroxyl-containing monomers; styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid Sulfonic group-containing monomers such as acids, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acrylamidooxynaphthalenesulfonic acid; 2-hydroxyethylpropenyl Phosphate-containing monomers such as phosphate esters; acrylamide; acrylonitrile and the like. These copolymerizable monomer components may be used alone or in combination of two or more. The use amount of these copolymerizable monomers is preferably 40% by weight or less of the total monomer components.

In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary for cross-linking. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate Wait. These polyfunctional monomers may be used alone or in combination of two or more. From the viewpoint of adhesive properties and the like, it is preferable that the amount of the polyfunctional monomer used is 30% by weight or less of the total monomer components.

The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the perspective of preventing contamination of clean adherends, the content of low molecular weight substances is preferably small. From this viewpoint, the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably about 200,000 to 3 million, and particularly preferably about 300,000 to 1.5 million.

In order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer, an external crosslinking agent may be appropriately used in the adhesive. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, and a melamine-based crosslinking agent to perform a reaction. When an external cross-linking agent is used, its use amount can be appropriately determined depending on the balance with the base polymer to be cross-linked and the use application as an adhesive. Generally speaking, it is blended with about 5 parts by weight or less, and more preferably blended with 0.1 to 5 parts by weight, relative to 100 parts by weight of the base polymer. In addition, if necessary, in addition to the aforementioned components, conventionally known additives such as various thickeners and anti-aging agents can be used for the adhesive.

The adhesive layer 14 can be formed using a radiation-hardening adhesive. The radiation-curable adhesive can increase the degree of cross-linking by irradiating radiation such as ultraviolet rays, thereby easily reducing its adhesion.

For example, by curing the radiation-curable adhesive layer 14 through the wafer sticking portion 16 a of the die-bonding film 16 shown in FIG. 1, it is possible to easily form the aforementioned portion 14 a in which the adhesive force significantly decreases. The die-bonding film 16 is adhered to the aforementioned portion 14a whose adhesive force is reduced due to hardening. Therefore, the interface between the aforementioned portion 14a of the adhesive layer 14 and the die-bonding film 16 has a property of being easily peeled off when picked up. On the other hand, the portion not irradiated with radiation has sufficient adhesive force to form the aforementioned portion 14b. The aforementioned portion 14b can firmly fix the wafer ring.

When the die-bonding film is laminated on the dicing sheet so as to cover the entire dicing sheet, the wafer ring can be fixed to the outer peripheral portion of the die-bonding film.

As the radiation-curable adhesive, an adhesive having a radiation-curable functional group such as a carbon-carbon double bond and the like can be used without particular limitation. Examples of the radiation-curable adhesive include the addition of a radiation-curable monomer component and an oligomer component to a general pressure-sensitive adhesive such as the aforementioned acrylic adhesive and rubber-based adhesive. Radiation hardening type adhesive.

Examples of the radiation-curable monomer component to be incorporated include urethane oligomers, urethane (meth) acrylates, and trimethylolpropane tri (meth) acrylic acid. Ester, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (methyl) Group) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation-curable oligomer component include urethane-based, polyether-based, polyester-based, and polycarbonate Various oligomers, such as polybutadiene based, and polybutadiene based, have molecular weights ranging from about 100 to 30,000. The blending amount of the radiation-curable monomer component and the oligomer component can be appropriately determined according to the kind of the adhesive layer, so as to reduce the adhesive force of the adhesive layer. Generally, it is preferably about 5 to 500 parts by weight and about 40 to 150 parts by weight based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.

In addition, as the radiation-curable adhesive, in addition to the additive-type radiation-curable adhesive described above, there may be used a polymer having a carbon-carbon double bond in a side chain or a main chain or a main chain end. Bonded polymers serve as the intrinsic type of radiation-hardening adhesive for the base polymer. The internal radiation-curing adhesive does not need to contain or contain a large amount of an oligomer component or the like as a low-molecular component, so the oligomer component or the like does not move in the adhesive over time. An adhesive layer having a stable layer structure is preferred.

As the aforementioned base polymer having a carbon-carbon double bond, a base polymer having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymer exemplified above.

The method for introducing a carbon-carbon double bond into the aforementioned acrylic polymer is not particularly limited, and various methods can be adopted, but introducing a carbon-carbon double bond into a polymer side chain is relatively easy in terms of molecular design. For example, there can be mentioned a method in which a monomer having a functional group is copolymerized with an acrylic polymer in advance, and then a functional group having a functional group capable of reacting with the functional group and a carbon-carbon double bond are copolymerized. The compound undergoes a condensation or addition reaction while maintaining the radiation-hardening property of the carbon-carbon double bond.

Examples of combinations of these functional groups include a carboxyl group and an epoxy group, a carboxyl group and an aziridinyl group, a hydroxyl group and an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferred from the viewpoint of easy tracking of the reaction. In addition, as long as the acrylic polymer having the carbon-carbon double bond is generated through the combination of these functional groups, the functional group may be on either side of the acrylic polymer and the compound, and the aforementioned preferable combination is a combination. It is preferable that an acrylic polymer has a hydroxyl group, and the said compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacrylic acid isocyanate, 2-methacrylic acid oxyethyl isocyanate, and m-isopropenyl-α, α-dimethylbenzyl isocyanate. Wait. In addition, as the acrylic polymer, an ether-based compound such as the hydroxyl-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like exemplified above can be used. An acrylic polymer obtained by copolymerization.

The intrinsic radiation-curing adhesive may use the above-mentioned base polymer (especially an acrylic polymer) having a carbon-carbon double bond alone, or may be blended with the radiation-curing property without impairing characteristics. Monomer and oligomer components. The radiation-hardenable oligomer component and the like are generally in a range of 30 parts by weight with respect to 100 parts by weight of the base polymer, and preferably in a range of 0 to 10 parts by weight.

The radiation-curable adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. As photopolymerization initiation Examples of the agent include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) one, α-hydroxy-α, α'-dimethylacetophenone, and 2-methyl Α-keto alcohol compounds such as 2-hydroxyphenylacetone, 1-hydroxycyclohexylphenyl ketone; methoxyacetophenone, 2,2'-dimethoxy-2-phenylacetophenone, 2 , 2'-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropane-1-one and other acetophenone-based compounds; benzoin Benzoin ether compounds such as trimethyl ether, benzoin isopropyl ether, anisole methyl ether; ketal compounds such as benzoin dimethyl ketal; aromatic sulfonyl chloride systems such as 2-naphthalenesulfonyl chloride Compounds; 1-benzophenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime and other photoactive oxime compounds; benzophenone, benzamylbenzoic acid, 3,3'-di Benzophenone compounds such as methyl-4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, Thiothanone compounds such as isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone; camphorquinone; halogen Ketone; fluorenyl phosphine oxide; fluorenyl phosphonate, etc.The blending amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight based on 100 parts by weight of the base polymer such as the acrylic polymer constituting the adhesive.

In addition, examples of the radiation-curable adhesive include rubber-based adhesives and acrylic adhesives disclosed in Japanese Patent Laid-Open No. 60-196956. The rubber-based adhesives and acrylic adhesives include: Addition of photopolymerizable compounds having two or more unsaturated bonds, photopolymerizable compounds such as alkoxysilanes having epoxy groups, and photopolymerization initiation with carbonyl compounds, organic sulfur compounds, peroxides, amines, and onium salt compounds Agent.

The radiation-curable adhesive layer 14 may contain a compound that is colored by irradiation with radiation, if necessary. Since the adhesive layer 14 contains a compound that is colored by irradiation with radiation, only the portion irradiated with the radiation can be colored. That is, the portion 14 a corresponding to the wafer sticking portion 16 a shown in FIG. 1 may be colored. Accordingly, it is possible to directly determine whether the adhesive layer 14 is irradiated with radiation by visual inspection, it is possible to easily identify the wafer sticking portion 16a, and it is also easy to stick the workpiece. In addition, when a semiconductor wafer is detected by a photo sensor or the like, the detection accuracy is high, so that an erroneous operation does not occur when the semiconductor wafer is picked up.

A compound colored by irradiation of radiation is a compound that is colorless or light-colored before irradiation of radiation, but is colored by irradiation of radiation. As a preferable specific example of the compound, a leuco dye can be mentioned, for example. As the leuco dye, a commonly used triphenylmethane-based, fluorane-based, phenothiazine-based, auramine-based, or spiropyran-based leuco dye can be used. Specific examples include 3- [N- (p-tolylamino)]-7-anilinofluoran, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorine Alkanes, 3- [N- (p-tolyl) -N-ethylamino] -7-anilinofluoran, 3-diethylamino-6-methyl-7-anilinofluoran, crystal violet Esters, 4,4 ', 4 "-tris (dimethylamino) triphenylmethanol, 4,4', 4" -tris (dimethylamino) triphenylmethane, and the like.

Examples of preferred color developers used with these leuco dyes include prepolymers of conventional novolac resins, aromatic carboxylic acid derivatives, and activated electron acceptors such as activated clay. When changing, various coloring agents can be used in combination.

The compound that is colored by irradiating such radiation may be dissolved in an organic solvent or the like and then included in the radiation-curable adhesive, or may be included in the adhesive in the form of a fine powder. The use ratio of the compound in the adhesive layer 14 is desirably 10% by weight or less, preferably 0.01 to 10% by weight, and more preferably 0.5 to 5% by weight. When the proportion of the compound exceeds 10% by weight, the radiation irradiated to the adhesive layer 14 is excessively absorbed by the compound, so that the aforementioned portion 14a of the adhesive layer 14 is not sufficiently hardened and the adhesive force may not be sufficiently reduced. On the other hand, in order to fully color, it is preferable that the ratio of the compound is 0.01% by weight or more.

In the case where the adhesive layer 14 is formed of a radiation-hardening adhesive, a part of the adhesive layer 14 may be radiated in such a manner that the adhesive force of the portion 14a in the adhesive layer 14 is less than the adhesive force of the other portion 14b. Irradiation.

Examples of a method for forming the portion 14 a on the adhesive layer 14 include a method of forming a radiation-curable adhesive layer 14 on the base material 12 and then partially irradiating the portion 14 a with radiation to harden the portion 14 a. The local radiation irradiation may be performed through a photomask formed with a pattern corresponding to a portion other than the wafer bonding portion 16 a of the die attach film 16. In addition, a method of curing by irradiating ultraviolet rays in a spot shape can be mentioned. The radiation-curable adhesive layer 14 can be formed by transferring the radiation-curable adhesive layer provided on the separator to the base material 12. The local radiation curing may be performed on the radiation-curable adhesive layer 14 provided on the separator.

In addition, an adhesive is formed via a radiation-hardening adhesive In the case of the layer 14, a base material that shields all or a part of at least one side of the base material 12 except for a portion corresponding to the wafer bonding portion 16a can be used, and radiation hardening can be formed on the base material. The type adhesive layer 14 is irradiated with radiation to harden a portion corresponding to the wafer sticking portion 16a, thereby forming the aforementioned portion 14a with reduced adhesive force. As a light-shielding material, a material which can be used as a photomask can be produced on a support film by printing, vapor deposition, or the like. Through the manufacturing method, the die-bond film 10 with a dicing sheet can be efficiently manufactured.

In addition, in the case where a hardening obstacle occurs due to oxygen during radiation irradiation, it is preferable to isolate oxygen (air) from the surface of the radiation-curable adhesive layer 14 by some method. Examples include a method of covering the surface of the adhesive layer 14 with a separator, and a method of irradiating radiation such as ultraviolet rays in a nitrogen atmosphere.

The thickness of the adhesive layer 14 is not particularly limited, but it is preferably about 1 μm to 50 μm in terms of both preventing defects on the diced surface of the wafer and fixing and holding the sticky crystal film 16. It is preferably 2 μm to 30 μm, and more preferably 5 μm to 25 μm.

The light transmittance of the adhesive layer 14 at a wavelength of 400 nm is preferably 80% or more, and more preferably 82% or more. The adhesive layer 14 having a light transmittance at a wavelength of 400 nm of 80% or more can be obtained by appropriately selecting a material constituting the adhesive layer 14.

In addition, the higher the light transmittance of the adhesive layer 14 at a wavelength of 400 nm, the better, but it may be set to 100% or less, for example.

The light transmittance of the adhesive layer at a wavelength of 400 nm is based on the The light transmittance at a wavelength of 400 nm was obtained in the same manner.

The light transmittance of the viscous thin film 10 with a dicing sheet before heat curing at a wavelength of 400 nm is preferably 50% or more, more preferably 55% or more, and more preferably 60% or more. If the light transmittance of the die-bonded thin film 10 with a dicing sheet before thermal curing is greater than 50% at a wavelength of 400 nm, it may be easier in a state where the die-bonded thin film 10 with a dicing sheet is adhered to the back of a semiconductor wafer. It was found whether the back and side of the semiconductor wafer were cracked.

As a method for making the light transmittance of the viscous crystal film 10 with a dicing sheet at 50% or more at a wavelength of 400 nm, as the substrate 12, a substrate having a light transmittance at a wavelength of 400 nm or more is selected. As the adhesive 14, a method in which a light transmittance at a wavelength of 400 nm or more is selected, and as a sticky crystal film 16, a method in which a light transmittance at a wavelength of 400 nm or more is selected.

In addition, the higher the light transmittance of the die-bonded thin film 10 with a dicing sheet at a wavelength of 400 nm, the better, but it can be set to 100% or less, for example.

The light transmittance of the viscous crystal film with a dicing sheet at a wavelength of 400 nm was obtained by the same method as the light transmittance of the viscous film at a wavelength of 400 nm.

It is preferable that the die-bonding film 16 with the die-bonding thin film 10 attached thereto is protected by a spacer (not shown). The separator has a function as a protective material for protecting the die-bond film 16 before being supplied to an actual application. The separator can also be used as a support substrate when transferring the die-bond film 16 to the adhesive layer 14. The separator is peeled off when a work piece (semiconductor wafer) is adhered to the die-bond film 16 to which the die-bond film 10 with a dicing sheet is attached. As a separator, poly Polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film or paper that has been surface-coated with a release agent such as a fluorine-containing release agent or a long-chain alkyl acrylate-based release agent may be used. .

The die-bonding thin film 10 with a dicing sheet of this embodiment is produced as follows, for example.

First, the base material 12 can be formed by a conventionally known film formation method. Examples of the film formation method include a calender film formation method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination (DRY LAMINATE) method.

Next, after the adhesive composition solution is applied on the base material 12 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinking if necessary) to form an adhesive layer 14. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions can be performed, for example, in a range of a drying temperature of 80 ° C. to 150 ° C. and a drying time of 0.5 minutes to 5 minutes. Alternatively, after the adhesive composition is applied to the separator to form a coating film, the coating film may be dried under the aforementioned drying conditions to form the adhesive layer 14. After that, the adhesive layer 14 is adhered to the substrate 12 together with the separator. Thereby, the dicing sheet 11 is produced.

The die-bonding thin film 16 is produced, for example, as described below.

First, an adhesive composition solution is prepared as a material for forming the sticky thin film 16. As described above, the adhesive composition solution is blended with the resin and other additives as needed.

Next, the adhesive composition solution is applied to the substrate separator. The coating film is formed to have a predetermined thickness, and then the coating film is dried under predetermined conditions to form a viscous thin film 16. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying conditions can be performed, for example, in a range of a drying temperature of 70 ° C to 160 ° C and a drying time of 1 minute to 5 minutes. In addition, after the adhesive composition solution is applied on the separator to form a coating film, the coating film may be dried under the aforementioned drying conditions to form a viscous crystal thin film 16. After that, the adhesive layer and the separator are adhered to the substrate separator.

Next, the separator is peeled from the dicing sheet 11 and the die-bonding film 16 respectively, and the two are bonded so that the adhesive layer 14 and the die-bonding film 16 become bonding surfaces. The bonding can be performed, for example, by pressure bonding. At this time, the lamination temperature is not particularly limited, but is preferably 30 ° C to 50 ° C, more preferably 35 ° C to 45 ° C. In addition, the linear pressure is not particularly limited, but it is preferably 0.1 kgf / cm to 20 kgf / cm, and more preferably 1 kgf / cm to 10 kgf / cm. Thereby, the die-bonding thin film 10 with a dicing sheet can be obtained.

(Manufacturing method of semiconductor device)

Next, a method for manufacturing a semiconductor device will be described.

Hereinafter, a method for manufacturing a semiconductor device using the die-bond thin film 10 with a dicing sheet will be described. However, in the present invention, a semiconductor device may be manufactured without using the die-bond film 10 with a dicing sheet and using the die-bond film 16. In this case, the step of bonding the dicing sheet 11 to the dicing sheet 16 to obtain the dicing sheet 10 with the dicing sheet is not required, and then it can be manufactured with a semiconductor device using the dicing sheet 10 with the dicing sheet. square The method is the same. Therefore, a method for manufacturing a semiconductor device using the die-bond thin film 10 with a dicing sheet is described below.

A method for manufacturing a semiconductor device according to this embodiment includes a preparation step, preparing the aforementioned die-bond film with a dicing sheet, and a laminating step, bonding the aforementioned die-bonding film with a dicing sheet, and a back surface of a semiconductor wafer. Bonding and dicing steps, cutting the semiconductor wafer and the die-bonding film together to form a wafer-like semiconductor wafer, and picking up the semiconductor wafer and the die-bonding film together from the die-bonding film with a dicing sheet together The steps of picking up and sticking the crystals stick the semiconductor wafer on the adherend through the crystal sticking film.

In the method for manufacturing a semiconductor device according to this embodiment, first, a die-bond thin film 10 with a dicing sheet is prepared (preparation step). Regarding the die-bond film 10 with a dicing sheet, a separator arbitrarily provided on the die-bond film 16 is appropriately peeled off and then used as described below. Hereinafter, a case where a die-bonding thin film 10 with a dicing sheet is used will be described as an example with reference to FIGS. 1 and 2.

First, the semiconductor wafer 4 is pressure-bonded to the semiconductor wafer sticking portion 16 a of the die-bonding film 16 in the die-bonding thin film 10 with a dicing sheet, and then held and fixed (sticking step). This step is performed while pressing with a pressing means such as a crimping roller. There is no particular limitation on the sticking temperature during installation, but it is preferably in the range of 40 to 90 ° C.

Next, the semiconductor wafer 4 is diced (dicing step). Thereby, the semiconductor wafer 4 is cut into a predetermined size and singulated, and the semiconductor wafer 5 is manufactured. The dicing method is not particularly limited. For example, the dicing is performed by a conventional method from the circuit surface side of the semiconductor wafer 4. In addition, in this step, for example, a cutting method such as full-cut cutting, which is cut into the die-bonding film 10 with a dicing sheet, may be adopted. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. In addition, since the semiconductor wafer 4 is subsequently fixed via the die-bonding thin film 10 with a dicing sheet, wafer defects or wafer scattering can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

In this embodiment, a viscous thin film 16 having a light transmittance T1 (%) at a wavelength of 400 nm of more than 80% and a dicing sheet 11 having a light transmittance at a wavelength of 400 nm of more than 80% are laminated. The die-bonding thin film 10 with a dicing sheet. Therefore, after dicing, it can be easily found from the dicing sheet 11 side whether or not there is a crack on the back or side of the semiconductor wafer. The presence or absence of cracking can be confirmed, for example, by using an optical microscope.

Next, the semiconductor wafer 5 is picked up (pickup step) in order to peel off the semiconductor wafer 5 which is subsequently fixed to the die-bond thin film 10 with a dicing sheet. The pickup method is not particularly limited, and various conventionally known methods can be used. For example, a method of pushing up each semiconductor wafer 5 with a needle from the side of the die-bonding thin film 10 with a dicing sheet, and picking up the pushed-up semiconductor wafer 5 through a pick-up device, and the like can be cited.

As a pick-up condition, from the viewpoint of preventing chipping, the needle push-up speed is preferably 5 to 100 mm / second, and more preferably 5 to 10 mm / second.

Here, when the adhesive layer 2 is of a radiation hardening type, picking up is performed after the adhesive layer 2 is irradiated with radiation. Accordingly, the adhesive force of the adhesive layer 2 to the die-bonding thin film 16 is reduced, and the semiconductor wafer 5 is easily peeled. As a result, pickup can be performed without damaging the semiconductor wafer 5. Conditions such as irradiation intensity and irradiation time during radiation irradiation are not particularly limited, and can be appropriately set as necessary. In addition, as a light source for radiation irradiation, a known light source can be used. It should be noted that when the adhesive layer is irradiated with radiation in advance to harden it, and when the cured adhesive layer is bonded to the sticky crystal film, the radiation here is not required.

Then, the picked-up semiconductor wafer 5 is then fixed to the adherend 6 via the die-bonding film 16 (die-bonding step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately prepared semiconductor wafer. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or a non-deformable adherend (such as a semiconductor wafer) that is not easily deformed.

As the substrate, a conventionally known substrate can be used. In addition, as the lead frame, a metal lead frame such as a Cu lead frame, a 42 alloy lead frame, and an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. . However, the present invention is not limited to this, and includes a circuit board that can be used after a semiconductor element is mounted and electrically connected to the semiconductor element.

Next, since the die-bond thin film 16 is of a thermosetting type, the semiconductor wafer 5 is then fixed to the adherend 6 by heat curing to improve the heat resistance strength (thermal curing step). It can be performed at a temperature of 80 to 200 ° C and 100 to 175 ° C, and more preferably at a heating temperature of 100 to 140 ° C. In addition, it may be performed under a heating time of 0.1 to 24 hours, preferably 0.1 to 3 hours, and more preferably 0.2 to 1 hour. In addition, heat hardening can be performed under pressure. The pressing conditions are preferably within a range of 1 to 20 kg / cm ² , and more preferably within a range of 3 to 15 kg / cm ² . Heat hardening under pressure can be performed, for example, in a chamber filled with an inert gas. In addition, an object obtained by further fixing the semiconductor wafer 5 to a substrate or the like via the die-bond film 16 can be subjected to a reflow process.

For the viscous thin film 16 of this embodiment, the difference between the aforementioned T1 (light transmittance at a wavelength of 400 nm before thermal curing) and the aforementioned T2 (transmittance at a wavelength of 400 nm after heating at 120 ° C for 1 hour) (T1-T2) is 20% or less. Therefore, it has a certain degree of light transmission after heat curing. Therefore, in the state after the thermosetting, it can be easily found whether or not there is cracking on the back or side of the semiconductor wafer.

Regarding the shear adhesion of the viscous crystal film 16 after heat curing, it is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa, with respect to the adherend 6. If the bonding force of the die-bonding thin film 16 is at least 0.2 MPa or more, during the wire bonding step, the die-bonding thin film 16 and the semiconductor wafer 5 or the adherend 6 will not be caused by the ultrasonic vibration and heating in this step. Then, shear deformation occurs on the surface. That is, the semiconductor wafer does not move due to the ultrasonic vibration during wire bonding, thereby preventing a decrease in the combined power of the wire bonding.

Next, as shown in FIG. 2, if necessary, the tip of the terminal portion (internal lead) of the adherend 6 is electrically connected to an electrode pad (not shown) on the semiconductor wafer 5 by a bonding wire 7 (wire bonding step). As the aforementioned bonding wire 7, for example, a gold wire, an aluminum wire, or a copper wire can be used. Make a lead The combined temperature is 80 ° C to 250 ° C, and a range of 80 ° C to 220 ° C is preferred. In addition, the heating time is several seconds to several minutes. In a state where the wiring is heated to the temperature range described above, the vibration energy of the ultrasonic wave and the compression energy of the pressure are used in combination. This step can be performed without thermally curing the die-bond film 16.

Next, as shown in FIG. 2, if necessary, the semiconductor wafer 5 is sealed with a sealing resin 8 (sealing step). This step is performed to protect the semiconductor wafer 5 and the bonding wires 7 and the like mounted on the adherend 6. This step is performed by molding the sealing resin with a mold. As the sealing resin 8, for example, epoxy resin is used. The heating temperature at the time of resin sealing is generally performed at 175 ° C for 60 seconds to 90 seconds. However, the present invention is not limited to this. For example, it may be cured at 165 ° C to 185 ° C for several minutes. Thereby, the sealing resin 8 is hardened, and the semiconductor wafer 5 and the adherend 6 are fixed to each other via the die-bonding film 16. That is, in the present invention, even if the post-hardening step described later is not performed, the fixing can be performed through the die-bond film 16 in this step, which can contribute to reducing the number of manufacturing steps and the manufacturing time of the semiconductor device. . In this sealing step, a method of embedding the semiconductor wafer 5 in a sheet-like sealing sheet may be adopted (for example, refer to Japanese Patent Application Laid-Open No. 2013-7028).

Then, if necessary, heating is performed to completely harden the sealing resin 8 that was not sufficiently hardened in the aforementioned sealing step (post-curing step). Even if the die-bonding film 16 is not completely thermally cured in the sealing step, the die-bonding film 16 can be completely thermally hardened together with the sealing resin 8 in this step. The heating temperature in this step is based on the The type varies, for example, in the range of 165 ° C to 185 ° C, the heating time is about 0.5 hours to 8 hours.

Further, in the method for manufacturing a semiconductor device according to this embodiment, after the temporary fixation by the die-bonding step, wire bonding may be performed without going through the thermal curing step by the heat-treatment of the die-bond film 16, and then a sealing resin may be used. 8. The semiconductor wafer 5 is sealed, and the sealing resin 8 is hardened (post-cured). At this time, the shear adhesion force at the time of temporary fixing of the viscous crystal film 16 is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa, with respect to the adherend 6. If the shear bonding force at the time of temporary fixing of the viscous crystal film 16 is at least 0.2 MPa or more, even if the wire bonding step is performed without going through the heating step, it will not be caused by the ultrasonic vibration and heating in this step. The bonding surface of the die-bond film 16 and the semiconductor wafer 5 or the adherend 6 undergoes shear deformation. That is, the semiconductor wafer does not move due to the ultrasonic vibration during wire bonding, thereby preventing a decrease in the combined power of the wire bonding. The term “temporary fixation” refers to fixing the semiconductor film to a semi-hardened state so that the curing reaction of the die-bond film is not completely advanced so as not to cause an obstacle in a subsequent step, thereby fixing the semiconductor. The state of the wafer 5. In addition, when performing wire bonding without going through the thermal hardening step based on the heat treatment of the die-bond film, the post-hardening step corresponds to the thermal hardening step in this specification.

Moreover, the die-bonding film with a dicing sheet of the present invention is also suitable for a case where a plurality of semiconductor wafers are laminated for three-dimensional mounting. At this time, the die-bonding thin film and the spacer may be laminated between the semiconductor wafers, or only the die-bonding thin film may be laminated without stacking the spacer between the semiconductor wafers. It can be appropriately changed according to manufacturing conditions and applications.

[Example]

Hereinafter, preferred embodiments of the present invention will be described in detail. However, as long as the materials, blending amounts, and the like described in this example are not particularly limited, the gist of the present invention is not limited to this range. In the following, parts refer to parts by weight.

<Fabrication of Sticky Crystal Film> (Example 1)

The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer containing ethyl acrylate, butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG-P3, content of each main monomer: ethyl acrylate 30% by weight of ester, 39% by weight of butyl acrylate, 28% by weight of acrylonitrile) 100 parts

(b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin)) 26 parts

(c) Anhydride ((Limited Share) made by New Japan Science Corporation, product name: MH-700 (alicyclic acid anhydride)) 24 copies

This adhesive composition solution was applied onto a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then at 130 ° C. Dry for 2 minutes. Thus, a 20 μm-thick sticky-crystal film A was produced.

(Example 2)

The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer containing ethyl acrylate, butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG-P3, content of each main monomer: ethyl acrylate 30% by weight of ester, 39% by weight of butyl acrylate, 28% by weight of acrylonitrile) 100 parts

(b) Acid anhydride ((Limited share) made by New Japan Science Corporation, product name: MH-700 (alicyclic acid anhydride)) 10 parts

This adhesive composition solution was applied onto a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then at 130 ° C. Dry for 2 minutes. As a result, a 20 μm thick sticky-crystal thin film B was produced.

(Example 3)

The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer based on butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG-700AS, content of each main monomer: 38% by weight of ethyl acrylate , 40% by weight of butyl acrylate, 17% by weight of acrylonitrile) 100 parts

(b) Epoxy resin (manufactured by Mitsubishi Chemical Corporation, product name: YX-8034 (alicyclic epoxy resin)) 14 parts

(c) 15 parts of silicon dioxide filler (manufactured by Admatechs, product name: SO-E2)

This adhesive composition solution was applied to a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then at 130 ° C. Dry for 2 minutes. Thus, a 20 μm thick sticky-crystal film C was produced.

(Comparative example 1)

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer based on butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG-700AS, content of each main monomer: 38% by weight of ethyl acrylate , 40% by weight of butyl acrylate, 17% by weight of acrylonitrile) 100 parts

(b) 23 parts of epoxy resin (manufactured by DIC, product name: HP-7200L)

(c) 25 parts of novolac resin (manufactured by Meiwa Chemical Co., Ltd., product name: MEH-7500)

(d) Filler (manufactured by Admatechs, product name: SO-E5, average particle diameter: 1.5 μm) 30 parts

This adhesive composition solution was applied onto a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then at 130 ° C. Dry for 2 minutes. Thereby, a 20 μm thick sticky-crystal thin film D was produced.

(Comparative example 2)

The following (a) to (c) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer containing butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG-700AS, content of each main monomer: 38% by weight of ethyl acrylate , 40% by weight of butyl acrylate, 17% by weight of acrylonitrile) 100 parts

(b) 23 parts of epoxy resin (manufactured by DIC, product name: HP-7200L)

(c) 25 parts of novolac resin (manufactured by Meiwa Chemical Co., Ltd., product name: MEH-7500)

This adhesive composition solution was applied to a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then dried at 130 ° C. 2 minutes. As a result, a 20 μm thick sticky-crystal film E was produced.

(Comparative example 3)

The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

The following (a) to (b) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23% by weight.

(a) Acrylic acid copolymer based on butyl acrylate and acrylonitrile as main monomers (manufactured by Nagase Kasei Co., Ltd., trade name: SG- 700AS, content of each main monomer: 38% by weight of ethyl acrylate, 40% by weight of butyl acrylate, 17% by weight of acrylonitrile) 100 parts

(b) 35 parts of epoxy resin (manufactured by DIC, product name: HP-7200L)

This adhesive composition solution was applied onto a release film (release liner) formed of a polyethylene terephthalate film having a thickness of 38 μm after the release treatment of polysiloxane, and then at 130 ° C. Dry for 2 minutes. Thus, a 20 μm-thick viscous thin film F was produced.

(Determination of the light transmittance T1 of a viscous thin film at a wavelength of 400 nm before thermal curing)

The light transmittance of the viscous crystal films of Examples and Comparative Examples at a wavelength of 400 nm was measured. Specifically, the viscous thin films (thickness: 20 μm) of the examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 400 nm was determined. The results are shown in Table 1.

<Transmittance measurement conditions>

Measuring device: UV-Vis near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)

Wavelength scanning speed: 2000nm / minute

Measurement range: 300 ~ 1200nm

Integrating sphere unit: ISN-723

Point diameter: 1cm square

(Transparent film after heating at 120 ° C for 1 hour at 400nm (Measurement of photometric T2)

The die-bonding films of Examples and Comparative Examples were heated at 120 ° C. for 1 hour. Thereafter, the light transmittance at a wavelength of 400 nm was measured. The measurement conditions are the same as those of the light transmittance T1. The results are shown in Table 1.

In addition, Table 1 also shows the difference (T1-T2) between T1 and T2, and the ratio T2 / T1 between T1 and T2.

(Determination of the loss elastic modulus of the viscous crystal film at 120 ° C)

The loss elastic modulus of the viscous crystal films of Examples and Comparative Examples at 120 ° C was measured. Specifically, the sticky crystal films of Examples and Comparative Examples were laminated to a thickness of 200 μm, respectively, to obtain a measurement sample having a width of 10 mm and a length of 40 mm. Then, using a dynamic viscoelasticity measuring device (RSA (III), manufactured by Rheometrics Technology Co., Ltd.), the loss elastic modulus at -50 to 300 ° C was measured under conditions of a chuck pitch of 22.5 mm, a frequency of 1 Hz, and a heating rate of 10 ° C / min. As the amount, the loss elastic modulus at 120 ° C. at this time was used.

<Cut sheet>

The dicing sheets A of Examples 1 to 3 and Comparative Examples 1 to 3 (common in Examples 1 to 3 and Comparative Examples 1 to 3) were prepared as described below.

In a reaction vessel equipped with a condenser tube, a nitrogen introduction tube, a thermometer, and a stirring device, 70 parts of 2-ethylhexyl acrylate (2EHA), 25 parts of 2-hydroxyethyl acrylate (HEA), and peracid benzamidine 0.2 were added. Parts and 60 parts of toluene were polymerized in a nitrogen stream at 61 ° C for 6 hours to obtain an acrylic polymer A.

To this acrylic polymer A, 10 parts of 2-methacryloxyethyl isocyanate (MOI) was added, and an addition reaction treatment was performed in an air stream at 50 ° C for 48 hours to obtain an acrylic polymer A '.

Next, 4 parts of a photopolymerization initiator (trade name "Irgacure 651", manufactured by Ciba Fine Chemicals) was added to 100 parts of the acrylic polymer A 'to prepare an adhesive solution.

The adhesive solution prepared in the foregoing was applied to the polysiloxane-treated surface of the PET release liner, and was heat-crosslinked at 120 ° C. for 2 minutes to form an adhesive layer precursor having a thickness of 20 μm. Next, a base film having a thickness of 80 μm having a two-layer structure of a polypropylene layer (thickness of 40 μm) and a polyethylene layer (thickness of 40 μm) was prepared, and a base was bonded on the surface of the adhesive precursor with the polypropylene layer as the bonding surface. Wood film. Only 500 mJ of ultraviolet light was irradiated to a portion (220 mm in diameter) of the adhesive layer precursor equivalent to a semiconductor wafer pasting portion (200 mm in diameter) to form an adhesive layer. Thus, a dicing sheet A according to Example 1 was obtained.

(Measurement of light transmittance of dicing sheet at a wavelength of 400 nm)

The light transmittance of the dicing sheets of Examples and Comparative Examples at a wavelength of 400 nm was measured. Specifically, the dicing sheets (thickness: 100 μm) of the examples and comparative examples were measured under the following conditions, and the light transmittance (%) at 400 nm was determined. The results are shown in Table 1.

<Transmittance measurement conditions>

Measuring device: UV-Vis near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)

Speed: 2000nm / min

Measurement range: 300 ~ 1200nm

Integrating sphere: ISN-723

Point diameter: 1cm square

<Fabrication of a Sticky Crystal Film with a Cutting Sheet> (Example 1)

The die-bonding film A was bonded to the dicing sheet A to obtain a die-bonding film A with a dicing sheet according to Example 1. The bonding conditions were 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

(Example 2)

The die-bond film B was bonded to the dicing sheet A to obtain a die-bond film B with a dicing sheet according to Example 2. The bonding conditions were 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

(Example 3)

The die-bonding film C was bonded to the dicing sheet A to obtain a die-bonding film B with a dicing sheet according to Example 2. The bonding conditions were 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

(Comparative example 1)

The die-bonding film D was bonded to the dicing sheet A to obtain a die-bonding film C with a dicing sheet in Comparative Example 1. Bonding conditions: 40 ° C, 10mm / Second, linear pressure 30kgf / cm.

(Comparative example 2)

The die-bonding film E was bonded to the dicing sheet A to obtain a die-bonding film D with a dicing sheet in Comparative Example 2. The bonding conditions were a bonding condition of 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

(Comparative example 3)

The die-bonding film F was bonded to the dicing sheet A to obtain a die-bonding film E with a dicing sheet in Comparative Example 3. The bonding conditions were a bonding condition of 40 ° C., 10 mm / sec, and a linear pressure of 30 kgf / cm.

(Determination of light transmittance of a viscous crystal film with a dicing sheet at a wavelength of 400 nm)

The light transmittance of the die-bonded thin film with a dicing sheet in Examples and Comparative Examples was measured at a wavelength of 400 nm. Specifically, the die-bonded thin film (thickness: 120 μm) with a dicing sheet in the examples and comparative examples was measured under the following conditions to determine the light transmittance (%) at 400 nm. The results are shown in Table 1.

<Transmittance measurement conditions>

Measuring device: UV-Vis near-infrared spectrophotometer V-670DS (manufactured by JASCO Corporation)

Speed: 2000nm / min

Measurement range: 300 ~ 1200nm

Integrating sphere: ISN-723

Point diameter: 1cm square

(Can you confirm the evaluation of back cracking)

Regarding the examples and comparative examples, the die-bonded thin film with a dicing sheet was bonded to a semiconductor wafer (diameter: 12 inches, thickness: 50 μm) via roll bonding, and then diced. The conditions for the roll-bonding are as described in the following <bonding conditions>. In addition, a full cut of a wafer size of 10 mm square was cut. The cutting conditions are as described in the following <Cutting Conditions>.

<Mating conditions>

Adhesive device: Nitto Seiki mechanism, MA-3000II

Pasting speed: 10mm / min

Adhesive pressure: 0.15MPa

Platform temperature when pasting: 40 ℃

<Cutting conditions>

Cutting device: DFD-6361, manufactured by DISCO Corporation

Cutting ring: 2-8-1 (manufactured by DISCO)

Cutting speed: 80mm / sec

Cutting blade:

Z1; 2050 HEDD by DISCO

Z2; 2050HEBB by DISCO

Cutting blade speed:

Z1; 40,000rpm

Z2; 40,000rpm

Blade height:

Z1; 0.170mm

Z2; 0.090mm

Cutting method: A mode / step cutting

Wafer chip size: 10.0mm square

Then, it was evaluated whether the back surface of the wafer could be cracked from the dicing sheet side. Specifically, whether or not the state of the back surface of the wafer can be confirmed is visually evaluated. A case where the state of the back of the wafer can be confirmed is evaluated as ○, and a case where it cannot be confirmed is evaluated as ×. In addition, the evaluation of ○ does not mean that the back surface of the wafer is cracked, but means that the back surface can be confirmed. Similarly, the evaluation of × does not mean that there is no chipping on the back surface of the wafer, but that the back surface cannot be confirmed. The results are shown in Table 1.

(Evaluation of whether side cracking can be confirmed after heat treatment)

After confirming the evaluation of backside cracking, a wafer with a sticky crystal film was picked up and stuck to a mirror wafer. Picking conditions and sticky crystal conditions are as follows.

<Pickup conditions>

Installation: Made by Shinkawa Co., Ltd., Crystal Stick Machine, SPA-300

Number of pins: 5

Picking height: 400μm

<Sticky conditions>

Installation: Made by Shinkawa Co., Ltd., Crystal Stick Machine, SPA-300

Temperature: 120 ℃

Load: 10N

Time: 1 second

After sticking the crystals, the sample was heated with a dryer at 120 ° C. for 1 hour, and thereafter, it was evaluated whether the side cracks of the wafer could be confirmed. Specifically, whether or not the state of the side surface of the wafer can be confirmed is visually evaluated. A case where the state of the side of the wafer can be confirmed is evaluated as ○, and a case where it cannot be confirmed is evaluated as ×. The results are shown in Table 1.

Claims (10)

A viscous crystal film characterized in that the light transmittance at a wavelength of 400 nm before heat curing is set to T1 (%), and the light transmittance at a wavelength of 400 nm after being heated at 120 ° C for 1 hour is set to T2 ( %), The T1 is 80% or more, and the difference (T1-T2) between the T1 and the T2 is 20% or less. A die-bonded thin film with a dicing sheet is a die-bonded thin film with a dicing sheet provided with the dichroic thin film of claim 1 on the dicing sheet. 80%. For example, the dicing film with a dicing sheet of claim 2, wherein the transmittance of the dicing film with a dicing sheet before heat curing is greater than 50% at a wavelength of 400 nm. For example, the die-bonding film with a dicing sheet of claim 2, wherein the aforementioned die-bonding film contains 50% by weight or more of an acrylic copolymer with respect to all organic resin components. For example, the sticky crystal film with a cutting sheet of claim 2, wherein the aforementioned sticky crystal film contains an acrylic copolymer, and the acrylic copolymer contains an alkyl acrylate or an alkyl methacrylate in a proportion of 50% by weight or more. It is obtained by polymerizing a monomer raw material of a base ester. For example, the die-bonding film with a cutting sheet of claim 2, wherein the cutting sheet is composed of a substrate and an adhesive layer, the adhesive layer contains an acrylic copolymer, and the acrylic copolymer is 50% by weight or more. It is obtained by polymerizing a monomer raw material containing an alkyl acrylate or an alkyl methacrylate in a proportion of. For example, the sticky crystal film with a cutting sheet according to claim 2, wherein the sticky crystal film contains at least one selected from the group consisting of an alicyclic epoxy resin and an alicyclic acid anhydride as a thermosetting resin. For example, the die-bonded thin film with a dicing sheet of claim 2, wherein the loss elastic modulus of the aforementioned die-bonded thin film at 120 ° C. is 0.05 to 0.5 MPa. A semiconductor device characterized in that it is manufactured by using a die-bonding film as claimed in claim 1 or a die-bond film with a dicing sheet as in any of claims 2-8. A method for manufacturing a semiconductor device, comprising: a preparation step, preparing a die-bonding film with a dicing sheet as described in any one of claims 2 to 8; The step of bonding and cutting the thin film of the thin film with the back surface of the semiconductor wafer, cutting the semiconductor wafer and the thin film of the sticky wafer together to form a wafer-shaped semiconductor wafer, and a step of picking up the semiconductor wafer and the thin film of sticking Picking up the aforementioned die-bonding film with a dicing sheet together and the die-bonding step, sticking the semiconductor wafer on the adherend through the die-bonding film.