JP6649689B2 - 減圧処理装置及びウエーハの保持方法 - Google Patents
減圧処理装置及びウエーハの保持方法 Download PDFInfo
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- JP6649689B2 JP6649689B2 JP2015051885A JP2015051885A JP6649689B2 JP 6649689 B2 JP6649689 B2 JP 6649689B2 JP 2015051885 A JP2015051885 A JP 2015051885A JP 2015051885 A JP2015051885 A JP 2015051885A JP 6649689 B2 JP6649689 B2 JP 6649689B2
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- wafer
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- 238000000034 method Methods 0.000 title claims description 7
- 230000006837 decompression Effects 0.000 title description 11
- 239000012495 reaction gas Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 17
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 description 8
- 230000003028 elevating effect Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Description
つまり、直流電源72から下部電極33に直流電圧が供給されている限り、ウエーハにはそれにバランスした電荷が保持されるため、プラズマの有無の影響を受けることなく静電チャック3に保持される。
2:チャンバ
20:ハウジング 21:上壁 211:絶縁体
22:下壁 221:絶縁体 222:開閉口
23:側壁 24:開閉口
25:シャッター
26:シャッター開閉手段 261:シリンダ 262:ピストン
3:静電チャック 30:軸部 31:テーブル部 32:吸着面 320:吸引孔
33:下部電極 34:吸引路 35:冷却水流通路 36:導電部
4:上部電極
40:軸部 41:板状部 42:吸着面 420:ガス噴出孔 43:ガス流通路
44:昇降手段 441:シリンダ 442:ピストンロッド 443:ブラケット
50:吸引源 51:冷却水供給手段 52:バルブ 53:減圧手段
54:不活性ガス供給源 55:反応ガス供給源
71:高周波電源 72:直流電源 720:スイッチ
8:搬入手段
81:接触部 82:保持部 83:枠体 84:アーム部 85:導通手段
86:吸引源 87:駆動手段 88:昇降移動手段 89:入出移動手段
W:ウエーハ W1:上面 W2:下面
Claims (1)
- 絶縁材料で形成され上面を吸着面とし内部に下部電極を有し該吸着面でウエーハを静電吸着する静電チャックと、該静電チャックの該吸着面に対面し該静電チャックの上方に配設される上部電極と、該静電チャックと該上部電極とを収容するチャンバと、該チャンバ内にウエーハを搬入し該吸着面にウエーハを載置する搬入手段と、該チャンバの内圧を減圧する減圧手段と、該チャンバ内に反応ガスを供給するガス供給手段と、該静電チャックに高周波電圧を印加し該チャンバ内に供給された該反応ガスをプラズマ化させ該静電チャックが吸着保持するウエーハを加工処理する減圧処理装置であって、
該搬入手段は、ウエーハの上面に接する導電性の接触部を有しウエーハを保持する保持部と、該保持部をアースに導通させる導通手段と、該保持部によって保持されたウエーハを静電チャックに載置する駆動手段と、を備え、
該導通手段は、該保持部とアースとが接続される状態と接続されない状態とを切り換えるスイッチを備え、
該静電チャックには、該吸着面において開口する吸引孔が配設され、
該吸引孔は、ウエーハを吸引する機能を有する
減圧処理装置におけるウエーハの保持方法であって、
該搬入手段が該チャンバ内にウエーハを搬入し該保持部が保持するウエーハが該静電チャックの該吸着面に接触した状態で、該スイッチが該保持部をアースに接続するとともに該下部電極に直流電圧を印加し、該保持部がウエーハの吸着を開放するとともに該保持部をウエーハから離反させることにより、該静電チャックとウエーハとに互いに極性が異なる電荷を帯電させ該吸着面でウエーハを吸着保持し、補助的に該吸引孔に吸引力を作用させるウエーハの保持方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015051885A JP6649689B2 (ja) | 2015-03-16 | 2015-03-16 | 減圧処理装置及びウエーハの保持方法 |
TW105103537A TWI709172B (zh) | 2015-03-16 | 2016-02-03 | 減壓處理裝置 |
CN201610143581.3A CN105990087B (zh) | 2015-03-16 | 2016-03-14 | 减压处理装置 |
US15/070,763 US20160276199A1 (en) | 2015-03-16 | 2016-03-15 | Decompression processing apparatus |
KR1020160031020A KR102304151B1 (ko) | 2015-03-16 | 2016-03-15 | 감압 처리 장치 |
Applications Claiming Priority (1)
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JP2015051885A JP6649689B2 (ja) | 2015-03-16 | 2015-03-16 | 減圧処理装置及びウエーハの保持方法 |
Publications (2)
Publication Number | Publication Date |
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JP2016171292A JP2016171292A (ja) | 2016-09-23 |
JP6649689B2 true JP6649689B2 (ja) | 2020-02-19 |
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JP2015051885A Active JP6649689B2 (ja) | 2015-03-16 | 2015-03-16 | 減圧処理装置及びウエーハの保持方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160276199A1 (ja) |
JP (1) | JP6649689B2 (ja) |
KR (1) | KR102304151B1 (ja) |
CN (1) | CN105990087B (ja) |
TW (1) | TWI709172B (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570272B2 (en) * | 2015-03-31 | 2017-02-14 | Panasonic Intellectual Property Management Co., Ltd. | Plasma processing apparatus and plasma processing method |
JP6697346B2 (ja) * | 2016-07-20 | 2020-05-20 | 株式会社ディスコ | 吸着確認方法、離脱確認方法、及び減圧処理装置 |
JP2018085408A (ja) * | 2016-11-22 | 2018-05-31 | 株式会社ディスコ | 減圧処理装置 |
JP6765761B2 (ja) * | 2016-12-27 | 2020-10-07 | 株式会社ディスコ | 静電チャック装置及び静電吸着方法 |
JP6905382B2 (ja) * | 2017-04-14 | 2021-07-21 | 株式会社ディスコ | ウェーハの搬入出方法 |
JP6990038B2 (ja) * | 2017-04-26 | 2022-01-12 | 日東電工株式会社 | 基板の離脱方法および基板の離脱装置 |
JP2019075477A (ja) * | 2017-10-17 | 2019-05-16 | 株式会社ディスコ | チャックテーブル機構 |
JP2020038907A (ja) * | 2018-09-04 | 2020-03-12 | 株式会社ディスコ | プラズマ処理装置 |
JP7189722B2 (ja) * | 2018-10-15 | 2022-12-14 | 株式会社ディスコ | ウェーハの搬送装置及び搬送方法 |
CN111952231A (zh) * | 2019-05-14 | 2020-11-17 | 北京北方华创微电子装备有限公司 | 电荷传输装置及相关等离子体系统 |
CN114446748B (zh) * | 2020-10-30 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其工作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4938352B1 (ja) | 1969-03-17 | 1974-10-17 | ||
JP2867526B2 (ja) * | 1990-01-16 | 1999-03-08 | 富士通株式会社 | 半導体製造装置 |
JPH07153825A (ja) * | 1993-11-29 | 1995-06-16 | Toto Ltd | 静電チャック及びこの静電チャックを用いた被吸着体の処理方法 |
US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
JP3742000B2 (ja) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | プレス装置 |
JP3901128B2 (ja) * | 2001-08-27 | 2007-04-04 | 松下電器産業株式会社 | プラズマ処理装置及びプラズマ処理方法 |
KR100890790B1 (ko) * | 2001-08-27 | 2009-03-31 | 파나소닉 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
JP4323232B2 (ja) * | 2002-12-04 | 2009-09-02 | 芝浦メカトロニクス株式会社 | 静電吸着方法、静電吸着装置及び貼り合せ装置 |
WO2005109489A1 (ja) * | 2004-05-07 | 2005-11-17 | Shin-Etsu Engineering Co., Ltd. | ワーク除電方法及びその装置 |
JP2005347545A (ja) | 2004-06-03 | 2005-12-15 | Nec Kansai Ltd | 静電チャック装置 |
WO2006049085A1 (ja) * | 2004-11-04 | 2006-05-11 | Ulvac, Inc. | 静電チャック装置 |
WO2010081009A2 (en) * | 2009-01-11 | 2010-07-15 | Applied Materials, Inc. | Systems, apparatus and methods for making an electrical connection to a robot and electrical end effector thereof |
US20130026136A1 (en) * | 2011-07-29 | 2013-01-31 | Qualcomm Mems Technologies, Inc. | Sputter-etch tool and liners |
JP6013740B2 (ja) * | 2012-02-03 | 2016-10-25 | 東京エレクトロン株式会社 | 離脱制御方法及びプラズマ処理装置の制御装置 |
KR102168064B1 (ko) * | 2013-02-20 | 2020-10-20 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
-
2015
- 2015-03-16 JP JP2015051885A patent/JP6649689B2/ja active Active
-
2016
- 2016-02-03 TW TW105103537A patent/TWI709172B/zh active
- 2016-03-14 CN CN201610143581.3A patent/CN105990087B/zh active Active
- 2016-03-15 US US15/070,763 patent/US20160276199A1/en not_active Abandoned
- 2016-03-15 KR KR1020160031020A patent/KR102304151B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20160276199A1 (en) | 2016-09-22 |
TWI709172B (zh) | 2020-11-01 |
TW201705264A (zh) | 2017-02-01 |
KR20160111338A (ko) | 2016-09-26 |
KR102304151B1 (ko) | 2021-09-17 |
JP2016171292A (ja) | 2016-09-23 |
CN105990087A (zh) | 2016-10-05 |
CN105990087B (zh) | 2019-09-06 |
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