JP5925704B2 - シリコン膜の形成方法およびその形成装置 - Google Patents
シリコン膜の形成方法およびその形成装置 Download PDFInfo
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- JP5925704B2 JP5925704B2 JP2013006042A JP2013006042A JP5925704B2 JP 5925704 B2 JP5925704 B2 JP 5925704B2 JP 2013006042 A JP2013006042 A JP 2013006042A JP 2013006042 A JP2013006042 A JP 2013006042A JP 5925704 B2 JP5925704 B2 JP 5925704B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 69
- 229910052710 silicon Inorganic materials 0.000 title claims description 69
- 239000010703 silicon Substances 0.000 title claims description 69
- 238000000034 method Methods 0.000 title claims description 56
- 238000005530 etching Methods 0.000 claims description 72
- 239000012535 impurity Substances 0.000 claims description 48
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 239000000460 chlorine Substances 0.000 claims description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 88
- 230000008569 process Effects 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 238000010926 purge Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 16
- 230000003746 surface roughness Effects 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
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- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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Description
表面に溝が形成された被処理体の前記溝にシリコン膜を形成するシリコン膜の形成方法であって、
前記被処理体の前記溝を埋め込むように不純物を含むシリコン膜を成膜する第1成膜工程と、
前記第1成膜工程で成膜されたシリコン膜の表面近傍に前記不純物をドープするドーピング工程と、
前記第1成膜工程で成膜されたシリコン膜をエッチングして前記溝の開口部を広げるエッチング工程と、
前記エッチング工程で開口部が広げられた溝にシリコン膜を埋め込むように成膜する第2成膜工程と、
を備え、
前記ドーピング工程では、前記不純物を含むガスを用いたガスフェースドープにより前記シリコン膜の表面近傍に不純物をドープし、
前記第1成膜工程、前記ドーピング工程、前記エッチング工程、及び、前記第2成膜工程を、単一の反応室内で、この順で連続して実施する、ことを特徴とする。
前記エッチング工程では、エッチングガスとして、例えば、塩素を用いる。
表面に溝が形成された被処理体の前記溝にシリコン膜を形成するシリコン膜の形成装置であって、
前記被処理体の前記溝を埋め込むように不純物を含むシリコン膜を成膜する第1成膜手段と、
前記第1成膜手段により成膜されたシリコン膜の表面近傍に前記不純物をドープするドーピング手段と、
前記第1成膜手段により成膜されたシリコン膜をエッチングして前記溝の開口部を広げるエッチング手段と、
前記エッチング手段により開口部が広げられた溝にシリコン膜を埋め込むように成膜する第2成膜手段と、
装置各部を制御する制御手段と、
を備え、
前記ドーピング手段は、前記不純物を含むガスを用いたガスフェースドープにより前記シリコン膜の表面近傍に不純物をドープし、
前記制御手段は、前記第1成膜手段、前記ドーピング手段、前記エッチング手段、及び、前記第2成膜手段を制御して、単一の反応室内で、この順で連続して実施し、表面に溝が形成された被処理体の前記溝にシリコン膜を形成する、ことを特徴とする。
前記エッチング手段は、エッチングガスとして、例えば、塩素を用いる。
圧力計(群)123は、反応管2内、処理ガス導入管13内、排気管16内等の各部の圧力を測定し、その測定値を制御部100に通知する。
RAM113は、CPU115のワークエリアなどとして機能する。
バス116は、各部の間で情報を伝達する。
2 反応管
3 内管
4 外管
5 マニホールド
6 支持リング
7 蓋体
8 ボートエレベータ
9 ウエハボート
10 半導体ウエハ
11 断熱体
12 昇温用ヒータ
13 処理ガス導入管
14 排気口
15 パージガス供給管
16 排気管
17 バルブ
18 真空ポンプ
51 基板
52 絶縁膜
53 溝
54 Si膜
100 制御部
111 レシピ記憶部
112 ROM
113 RAM
114 I/Oポート
115 CPU
116 バス
121 操作パネル
122 温度センサ
123 圧力計
124 ヒータコントローラ
125 MFC制御部
126 バルブ制御部
Claims (6)
- 表面に溝が形成された被処理体の前記溝にシリコン膜を形成するシリコン膜の形成方法であって、
前記被処理体の前記溝を埋め込むように不純物を含むシリコン膜を成膜する第1成膜工程と、
前記第1成膜工程で成膜されたシリコン膜の表面近傍に前記不純物をドープするドーピング工程と、
前記第1成膜工程で成膜されたシリコン膜をエッチングして前記溝の開口部を広げるエッチング工程と、
前記エッチング工程で開口部が広げられた溝にシリコン膜を埋め込むように成膜する第2成膜工程と、
を備え、
前記ドーピング工程では、前記不純物を含むガスを用いたガスフェースドープにより前記シリコン膜の表面近傍に不純物をドープし、
前記第1成膜工程、前記ドーピング工程、前記エッチング工程、及び、前記第2成膜工程を、単一の反応室内で、この順で連続して実施する、ことを特徴とするシリコン膜の形成方法。 - 前記不純物はリンであることを特徴とする請求項1に記載のシリコン膜の形成方法。
- 前記エッチング工程では、エッチングガスとして塩素を用いることを特徴とする請求項1又は2に記載のシリコン膜の形成方法。
- 表面に溝が形成された被処理体の前記溝にシリコン膜を形成するシリコン膜の形成装置であって、
前記被処理体の前記溝を埋め込むように不純物を含むシリコン膜を成膜する第1成膜手段と、
前記第1成膜手段により成膜されたシリコン膜の表面近傍に前記不純物をドープするドーピング手段と、
前記第1成膜手段により成膜されたシリコン膜をエッチングして前記溝の開口部を広げるエッチング手段と、
前記エッチング手段により開口部が広げられた溝にシリコン膜を埋め込むように成膜する第2成膜手段と、
装置各部を制御する制御手段と、
を備え、
前記ドーピング手段は、前記不純物を含むガスを用いたガスフェースドープにより前記シリコン膜の表面近傍に不純物をドープし、
前記制御手段は、前記第1成膜手段、前記ドーピング手段、前記エッチング手段、及び、前記第2成膜手段を制御して、単一の反応室内で、この順で連続して実施し、表面に溝が形成された被処理体の前記溝にシリコン膜を形成する、ことを特徴とするシリコン膜の形成装置。 - 前記不純物はリンであることを特徴とする請求項4に記載のシリコン膜の形成装置。
- 前記エッチング手段は、エッチングガスとして塩素を用いることを特徴とする請求項4又は5に記載のシリコン膜の形成装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2013006042A JP5925704B2 (ja) | 2013-01-17 | 2013-01-17 | シリコン膜の形成方法およびその形成装置 |
KR1020140004086A KR101689925B1 (ko) | 2013-01-17 | 2014-01-13 | 실리콘막의 형성 방법 및 그 형성 장치 |
TW103101512A TWI549181B (zh) | 2013-01-17 | 2014-01-15 | 矽膜之形成方法及其形成裝置 |
US14/156,097 US9558940B2 (en) | 2013-01-17 | 2014-01-15 | Method and apparatus for forming silicon film |
CN201410022488.8A CN103943474B (zh) | 2013-01-17 | 2014-01-17 | 硅膜的形成方法及其形成装置 |
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JP2013006042A JP5925704B2 (ja) | 2013-01-17 | 2013-01-17 | シリコン膜の形成方法およびその形成装置 |
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JP2014138084A JP2014138084A (ja) | 2014-07-28 |
JP5925704B2 true JP5925704B2 (ja) | 2016-05-25 |
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US (1) | US9558940B2 (ja) |
JP (1) | JP5925704B2 (ja) |
KR (1) | KR101689925B1 (ja) |
CN (1) | CN103943474B (ja) |
TW (1) | TWI549181B (ja) |
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JP6693292B2 (ja) * | 2016-06-20 | 2020-05-13 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び半導体製造装置 |
JP6606476B2 (ja) | 2016-08-02 | 2019-11-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US10115639B2 (en) * | 2016-11-29 | 2018-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET device and method of forming the same |
JP6778139B2 (ja) | 2017-03-22 | 2020-10-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
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