JP5969493B2 - スパッタリングターゲットおよびその製造方法 - Google Patents
スパッタリングターゲットおよびその製造方法 Download PDFInfo
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- JP5969493B2 JP5969493B2 JP2013541646A JP2013541646A JP5969493B2 JP 5969493 B2 JP5969493 B2 JP 5969493B2 JP 2013541646 A JP2013541646 A JP 2013541646A JP 2013541646 A JP2013541646 A JP 2013541646A JP 5969493 B2 JP5969493 B2 JP 5969493B2
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- 238000005477 sputtering target Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 42
- 238000005245 sintering Methods 0.000 claims description 23
- 239000000843 powder Substances 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 description 73
- 238000004544 sputter deposition Methods 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 9
- 238000009413 insulation Methods 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000005469 granulation Methods 0.000 description 4
- 230000003179 granulation Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
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- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Description
(5)相対密度が99%以上である上記(1)〜(4)のいずれかのスパッタリングターゲット。
本発明に係るスパッタリングターゲットにおいては、質量%で、純度が99.99%以上(4N)のアルミナ焼結体を用いる必要がある。純度が99.9%以上(3N)のアルミナ焼結体では、後段で説明するようなホットプレス焼結およびアニール処理を実施するなど、様々な対策を講じたところで、これをターゲットにして得たスパッタ膜に優れた絶縁耐圧と良好な表面粗さを与えることができない。これに対して、純度が99.99%以上(4N)のアルミナ焼結体を用いれば、このような特殊な熱処理を実施しなくても、良好な相対密度と平均結晶粒径を有する焼結体となる。この焼結体をターゲットとするスパッタリングで得たスパッタ膜に優れた絶縁耐圧と良好な表面粗さを付与できる。特に、アルカリ金属およびハロゲンを含まないことが好ましい。
アルミナ焼結体中の気孔が多い場合、最大の介在物は、空気組成気体および水となり、たとえ高純度のアルミナ焼結体であっても、その相対密度が低い場合にはスパッタリングによって得られるスパッタ膜の低密度化および異常成長を引き起こし、耐絶縁耐圧を低下させる。スパッタリングターゲットの相対密度(実測密度を理論密度で除した値を百分率で示した値)が低いと、そのターゲットを用いたスパッタリングによって得られるスパッタ膜の表面粗さが大きくなり、薄膜の均質化に悪影響を及ぼすことになる。また、基材中の気孔も多くなり、基材内に微量の水分を吸着するためスパッタプロセス中に水を放出し、スパッタ膜の特性にも悪影響及ぼす。このため、相対密度は、98%以上とする必要がある。焼結過程の結晶粒成長を後述する平均結晶粒径の範囲に抑制出来ることが前提条件となるが、より好ましいのは99%以上であり、さらに好ましいのは、99.5%以上である。
スパッタリングターゲットの平均結晶粒径が大きいと、そのターゲットを用いたスパッタリングによって得られるスパッタ膜の表面粗さが大きくなり、薄膜の均質化に悪影響を及ぼすことになる。このため、平均結晶粒径はできるだけ小さくすることが好ましい。特に、10μm以下とするのがよい。平均結晶粒径は、5μm未満とするのがより好ましく、特に、2μm以下とするのが好ましい。ただし、純度が4Nのアルミナ焼結体は、平均結晶粒径を5μm未満とすることが必要である。
本発明に係るスパッタリングターゲットの製造方法については、特に制約がなく、大気炉での焼結によっても製造してもよい。大気炉における焼結は、目的の純度と同等程度の純度を有する原料粉体を成形した後、例えば、1250〜1700℃の大気炉に30〜600分保持することにより行うことができる。成形に関してはCIPや金型プレス成形等の手法を取ることができ、成形前に粒度調製やバインダー等を添加した造粒を適宜実施しても良い。大気炉の温度が1250℃未満では、緻密な焼結体を得ることができず、スパッタ膜の均質性および絶縁耐圧が悪化する。また、このような低温で焼結した焼結体は、多孔質で強度が劣るので、スパッタプロセス時の異常放電等でターゲットが破損するおそれがあり、ターゲット基材そのものがパーティクルとして飛散してスパッタ膜の欠陥要因ともなり得る。
JIS R 1634に準拠し、アルキメデス法で見掛け密度を測定し、アルミナの理論密度を3.987g/cm3として、これに対する相対密度(%)を求めた。
焼結体の内層部からRa:0.05μm未満まで鏡面研磨した試験片を切り出し、熱濃リン酸で結晶グレインが露出するまで化学エッチング処理を実施した。その後、走査電子顕微鏡(SEM)で結晶粒の写真撮影を実施し、JIS R 1670に準拠し、N=100が確保される任意視野内で円相当径を作図して結晶粒径を集計の上、平均結晶粒径を(μm)を算出した。
焼結体に、アルカリ溶融等の前処理を実施して溶液化した上で、誘導結合プラズマ発光分光分析(ICP−AES)および炎光分光光度計(Li,Na,Kが対象)にて、Mg、Si、Fe、Cu、Ca、Cr、Ti、Ni、Mo、W、Co、Y、Zn、Mn、Li、NaおよびKの17元素の定量分析を実施し、検出された元素については定量値を酸化物に換算し、100%から除してアルミナ焼結体の純度を求めた。
#400番砥石を用いた研削加工にてエロージョン面の仕上げ加工を実施した、各ターゲット材の研削面の中心線平均粗さ(Ra)=0.2〜0.8μmの範囲となった。
スパッタ膜の表面粗さRa(nm)は、走査プローブ顕微鏡(AFM)にて加振電圧1.36V、走査範囲1000nm、レバー長125μm、針高さ10μmの条件で測定した。
Electrochemical Analyzerを用い、測定電位0〜5V、スキャン速度0.01V/sの条件で、Cu上部電極を設けた部分9箇所の絶縁耐圧値を測定し、9点の平均値を求め、スパッタ膜の絶縁耐圧とした。
Claims (6)
- 質量%で、純度が99.99%以上であり、相対密度が98%以上で、かつ平均結晶粒径が2μm未満であるアルミナ焼結体を用いたことを特徴とするスパッタリングターゲット。
- 質量%で、純度が99.999%以上であり、相対密度が98%以上で、かつ平均結晶粒径が10μm以下であるアルミナ焼結体を用いたことを特徴とするスパッタリングターゲット。
- 平均結晶粒径が5μm未満であることを特徴とする請求項2に記載のスパッタリングターゲット。
- 平均結晶粒径が2μm未満であることを特徴とする請求項2または3に記載のスパッタリングターゲット。
- 相対密度が99%以上であることを特徴とする請求項1から4までのいずれかに記載のスパッタリングターゲット。
- 質量%で、純度が99.99%以上であり、相対密度が98%以上で、かつ平均結晶粒径が5μm未満であるアルミナ焼結体をスパッタリングターゲットとして用いた該スパッタリングターゲットの製造方法であって、
粉末原料に、1250〜1350℃でのホットプレス焼結を実施した後、大気中で1300〜1700℃のアニール処理を実施することによって前記アルミナ焼結体を得ることで前記スパッタリングターゲットを製造することを特徴とする、スパッタリングターゲットの製造方法。
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CN106222618B (zh) * | 2016-08-29 | 2018-12-18 | 基迈克材料科技(苏州)有限公司 | SnO2掺杂ZnO溅射靶材的制备方法 |
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Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4004452A (en) * | 1974-04-23 | 1977-01-25 | Ford Motor Company | Air/fuel ratio sensor for air/fuel ratios in excess of stoichiometry |
JPS60181270A (ja) * | 1984-02-27 | 1985-09-14 | Matsushita Electric Ind Co Ltd | スパツタ−用タ−ゲツトの製造方法 |
JPH06299347A (ja) * | 1993-04-08 | 1994-10-25 | Nippon Steel Corp | 電気絶縁性板状材料の製造方法 |
JPH0995773A (ja) * | 1995-10-03 | 1997-04-08 | Kobe Steel Ltd | 真空装置用窓材の製造方法 |
JPH11241160A (ja) * | 1998-02-26 | 1999-09-07 | Sony Corp | 絶縁膜の成膜方法及び薄膜磁気ヘッドの製造方法 |
JPH11240720A (ja) * | 1998-02-27 | 1999-09-07 | Mitsubishi Research Institute Inc | 強誘電性酸化物の緻密質焼結体およびその製造法 |
JP2000064034A (ja) | 1998-08-19 | 2000-02-29 | Toshiba Ceramics Co Ltd | アルミナ・スパッタリング・ターゲット及びその製造方法並びに高周波スパッタリング装置 |
JP2001064426A (ja) * | 1999-06-25 | 2001-03-13 | Japan Polyolefins Co Ltd | 多孔質フィルムおよびその製法 |
JP2001348265A (ja) | 2000-05-31 | 2001-12-18 | Ngk Spark Plug Co Ltd | アルミナ質焼結体及びその製造方法並びにこのアルミナ質焼結体を用いたセラミックヒータ、ガスセンサ素子及びこれを備えるガスセンサ |
JP2001064424A (ja) * | 2000-07-05 | 2001-03-13 | Toyobo Co Ltd | 透明ガスバリアフィルム |
CN1556900A (zh) * | 2001-09-28 | 2004-12-22 | 日本精工株式会社 | 滚动装置 |
US20030098102A1 (en) * | 2001-11-13 | 2003-05-29 | Perry Andrew C. | High-purity aluminum sputter targets and method of manufacture |
JP4961672B2 (ja) * | 2004-03-05 | 2012-06-27 | 東ソー株式会社 | 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法 |
TWI390062B (zh) * | 2004-03-05 | 2013-03-21 | Tosoh Corp | 圓柱形濺射標靶,陶瓷燒結體,以及製造燒結體的方法 |
JP2006205558A (ja) * | 2005-01-28 | 2006-08-10 | Gunma Prefecture | アルミナコーティング構造体およびその製造方法 |
JP5197975B2 (ja) * | 2006-03-24 | 2013-05-15 | 日本碍子株式会社 | 焼結体、発光管及びその製造方法 |
WO2007111380A1 (en) * | 2006-03-24 | 2007-10-04 | Ngk Insulators, Ltd. | Method for producing sintered body, and sintered body |
WO2010018707A1 (ja) | 2008-08-11 | 2010-02-18 | 出光興産株式会社 | 酸化ガリウム-酸化スズ系酸化物焼結体及び酸化物膜 |
JP5727130B2 (ja) | 2008-08-18 | 2015-06-03 | 東ソー株式会社 | 複合酸化物焼結体及びその用途 |
JP2010087293A (ja) | 2008-09-30 | 2010-04-15 | Toshiba Corp | 磁気抵抗効果素子の製造方法 |
CN101985735A (zh) | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | 一种氧化铝靶材和该靶材制备的透明导电薄膜 |
JP5488970B2 (ja) * | 2009-12-16 | 2014-05-14 | 三菱マテリアル株式会社 | 透明導電膜、この透明導電膜を用いた太陽電池および透明導電膜を形成するためのスパッタリングターゲット |
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