JP5820176B2 - 電子回路 - Google Patents
電子回路 Download PDFInfo
- Publication number
- JP5820176B2 JP5820176B2 JP2011159533A JP2011159533A JP5820176B2 JP 5820176 B2 JP5820176 B2 JP 5820176B2 JP 2011159533 A JP2011159533 A JP 2011159533A JP 2011159533 A JP2011159533 A JP 2011159533A JP 5820176 B2 JP5820176 B2 JP 5820176B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- voltage
- terminal
- distributed constant
- constant line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 16
- 238000004088 simulation Methods 0.000 description 13
- 101100365516 Mus musculus Psat1 gene Proteins 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 241001125929 Trisopterus luscus Species 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Description
L1〜L4 分布定数線路
R1、R2 抵抗
T1 第1トランジスタ
T2 第2トランジスタ
VDD 直流電源
Claims (4)
- 第1端子、第2端子および制御端子を有し、前記第1端子が接地された第1トランジスタと、
第1端子、第2端子および制御端子を有し、前記制御端子に前記第1トランジスタの第2端子が接続され、前記第1端子が前記第1トランジスタの前記第2端子と高周波的に接続され、かつ前記第1端子が高周波的に接地されておらず、前記第2端子に直流電源が接続される第2トランジスタと、
前記第1トランジスタの第2端子と前記第2トランジスタの制御端子との間のノードに一端が接続され、他端が前記第2トランジスタの第1端子に接続された第1抵抗と、
前記ノードに一端が接続され、他端が前記第2トランジスタの第1端子に接続され、前記第1抵抗と直列に接続された第1分布定数線路と、
を具備したことを特徴とする電子回路。 - 前記第1トランジスタの第2端子に一端が接続され、前記ノードに他端が接続された第2分布定数線路と、
前記ノードに一端が接続され、前記第2トランジスタの制御端子に他端が接続された第3分布定数線路と、
前記ノードに一端が接続され、前記第2トランジスタの第1端子に他端が接続され、前記第1分布定数線路および前記第1抵抗と直列に接続された第4分布定数線路と、
を具備することを特徴とする請求項1記載の電子回路。 - 前記第1分布定数線路の電気長は、前記第1トランジスタおよび前記第2トランジスタが増幅する高周波信号の1/4波長より長く、かつ3/4波長より短いことを特徴とする請求項1または2記載の電子回路。
- 前記第2トランジスタの第2端子の電圧と前記第2トランジスタの第1端子の電圧の位相差が、90度以上かつ270℃度以下であることを特徴とする請求項1記載の電子回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011159533A JP5820176B2 (ja) | 2011-07-21 | 2011-07-21 | 電子回路 |
US13/554,189 US8797101B2 (en) | 2011-07-21 | 2012-07-20 | High frequency amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011159533A JP5820176B2 (ja) | 2011-07-21 | 2011-07-21 | 電子回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013026811A JP2013026811A (ja) | 2013-02-04 |
JP5820176B2 true JP5820176B2 (ja) | 2015-11-24 |
Family
ID=47555372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011159533A Active JP5820176B2 (ja) | 2011-07-21 | 2011-07-21 | 電子回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8797101B2 (ja) |
JP (1) | JP5820176B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9602056B2 (en) | 2014-09-19 | 2017-03-21 | Skyworks Solutions, Inc. | Amplifier with base current reuse |
JP6387902B2 (ja) * | 2015-05-28 | 2018-09-12 | 三菱電機株式会社 | 多段増幅器 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS622815Y2 (ja) * | 1980-12-09 | 1987-01-22 | ||
US4423388A (en) * | 1981-10-29 | 1983-12-27 | Watkins-Johnson Company | RF Amplifier circuit employing FET devices |
EP0549045B1 (fr) * | 1991-12-23 | 1996-11-27 | Laboratoires D'electronique Philips S.A.S. | Dispositif semiconducteur comprenant un amplificateur différentiel à deux étages |
KR960003560B1 (ko) * | 1992-11-26 | 1996-03-15 | 삼성전기주식회사 | 전압제어 발진회로 |
US5648743A (en) * | 1993-08-10 | 1997-07-15 | Fujitsu Limited | Amplifying circuit for an integrated circuit with low-noise characteristic |
JP3778596B2 (ja) * | 1995-09-19 | 2006-05-24 | 富士通株式会社 | 同調増幅回路 |
US6320468B2 (en) * | 1998-10-23 | 2001-11-20 | Raytheon Company | Method and system for suppressing oscillations in a multi-stage amplifier |
US7123099B2 (en) * | 2003-09-18 | 2006-10-17 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Two-stage amplifier with series L-R coupling network |
JP4425886B2 (ja) * | 2006-07-27 | 2010-03-03 | 住友電工デバイス・イノベーション株式会社 | 電子回路装置 |
JP5543790B2 (ja) * | 2010-01-25 | 2014-07-09 | 住友電気工業株式会社 | 電子回路 |
JP5479284B2 (ja) * | 2010-09-24 | 2014-04-23 | 住友電気工業株式会社 | 電子回路 |
-
2011
- 2011-07-21 JP JP2011159533A patent/JP5820176B2/ja active Active
-
2012
- 2012-07-20 US US13/554,189 patent/US8797101B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013026811A (ja) | 2013-02-04 |
US20130021102A1 (en) | 2013-01-24 |
US8797101B2 (en) | 2014-08-05 |
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