JP5846854B2 - Integrated power converter and DCDC converter used therefor - Google Patents

Description

  The present invention relates to an integrated power conversion device in which a plurality of power conversion devices are integrated, and a DCDC converter device used therefor.

  Electric vehicles and plug-in hybrid vehicles are equipped with high-voltage storage batteries and low-voltage storage batteries. The high voltage storage battery supplies power to an inverter device for driving a motor for driving a vehicle. The low voltage battery operates auxiliary equipment such as vehicle lights and radios. Such a vehicle is equipped with a DCDC converter device that performs power conversion from a high voltage storage battery to a low voltage storage battery or power conversion from a low voltage storage battery to a high voltage storage battery.

  In such a vehicle, it is desired to increase the ratio of the room to the volume of the entire vehicle as much as possible to improve the comfortability. For this reason, it is desired that the inverter device and the DCDC converter device be mounted in the smallest possible space outside the passenger compartment, particularly in the engine room. For example, in the following Patent Document 1, the structure in which the inverter device and the DC / DC converter device are integrated so that no electric corrosion occurs in the hose connecting the cooling water channel between the inverter device and the DC / DC converter device. Proposed.

  Since the temperature environment in the engine room is in a high temperature range, it is conceivable that the control function of the inverter device and the DCDC converter device is lowered and the deterioration of the structural parts is accelerated. For this reason, as a cooling mechanism of an inverter device or a DCDC converter device, these devices are generally cooled by a refrigerant composed of a mixture of water, and as a cooling mechanism including this cooling method, cooling efficiency is high and space saving is improved. It has become important.

  However, in Patent Document 1, a cooling mechanism including a cooling pipe is required for each of the inverter device and the DCDC converter device, so that there is a problem that the cooling path becomes complicated and the in-vehicle space increases. In addition, there is a problem that the material of the hose is restricted and the resistance value of the hose needs to be managed.

JP 2010-119275 A

  The problem to be solved by the present invention is to reduce the size of an integrated power conversion device in which a plurality of power conversion devices are integrated and a DCDC converter device used therefor.

In order to solve the above problems, an integrated power conversion device according to the present invention is an integrated power conversion device in which a first power conversion device and a second power conversion device are connected, and the first power conversion device includes: A first power semiconductor module that converts electric power; a flow path forming body that forms a flow path through which a cooling refrigerant flows; a first case that houses the first power semiconductor module and the flow path forming body; An inlet pipe connected to the flow path, and an outlet pipe connected to the flow path, wherein the second power conversion device includes a second power semiconductor module that converts power, and a second case that houses the second power semiconductor module; The flow path forming body has an opening connected to the flow path, and the second case has the flow path forming body or the first case so that a part of the second case closes the opening. Fixed to the first A force conversion device that outputs an alternating current that drives a motor for driving the vehicle; and the second power conversion device is housed in the second power semiconductor module and connected to a high voltage power source; A low-voltage side semiconductor element connected to a low-voltage power supply, a transformer circuit, a drive circuit unit for driving the high-voltage side switching element and the low-voltage side semiconductor element, and power for transmitting drive power of the drive circuit unit A DCDC converter having a conducting wire and a communication conducting wire for transmitting a signal for driving the driving circuit unit, wherein the first case has a first opening, and the second case has the first There is a second opening on the surface facing the case, the second opening is provided to face the first opening, and the power conductor and the communication conductor are the first opening and the First Through the opening, obtains driving power and driving signals of the driving circuit portion from the first power converter side, the second case has a protrusion that is fitted into the first opening.

Moreover, in order to solve the said subject, as for the integrated power converter device which concerns on this invention, a part of said 2nd case which blocks the said opening part forms a recessed part in the part facing the said flow path. In order to solve the above problems, in the integrated power converter according to the present invention, a part of the second case that closes the opening is formed with a recess in a part different from a part facing the flow path. And the said recessed part is connected with the said flow path. Moreover, in order to solve the said subject, as for the integrated power converter device which concerns on this invention, a part of said 2nd case which plugs up the said opening part has a convex part which protrudes in the said flow path, The convex portion bypasses the cooling refrigerant flowing in the flow path to the concave portion of the second case. Moreover, in order to solve the said subject, the integrated power converter device which concerns on this invention WHEREIN: A said 2nd power semiconductor module is arrange | positioned at the bottom face of the said 2nd case so that the said flow path may be opposed. In order to solve the above problem, the integrated power converter according to the present invention is such that the first power converter outputs an alternating current that drives a motor for driving the vehicle, and the second power converter A DCDC converter having a high voltage side switching element housed in the second power semiconductor module and connected to a high voltage power source, a low voltage side semiconductor element connected to a low voltage power source, and a transformer circuit; The transformer circuit is disposed on the bottom surface of the second case so as to face the flow path. Moreover, in order to solve the said subject, the integrated power converter device which concerns on this invention WHEREIN: The said flow-path formation body has the 1st flow path, and the 2nd flow path formed in parallel with the said 1st flow path. The transformer circuit is disposed on the bottom surface of the second case so as to face the first flow path, and the second power semiconductor module is arranged to face the second flow path. It is arranged on the bottom of the two cases. Moreover, in order to solve the said subject, the integrated power converter device which concerns on this invention has the 3rd flow path in which the said flow path formation body connects the said 1st flow path and the said 2nd flow path, The low-voltage side semiconductor element is disposed on the bottom surface of the second case so as to face the third flow path. Moreover, in order to solve the said subject, the integrated power converter device which concerns on this invention has a capacitor | condenser in which the said 1st power converter device smoothes the direct current supplied to a said 1st power semiconductor module, The capacitor is sandwiched between the first flow path and the second flow path.

  According to the present invention, an integrated power conversion device in which a plurality of power conversion devices are integrated and a DCDC converter device used therefor can be reduced in size.

It is a perspective view which is a figure which shows the external appearance of an integrated power converter device. It is a perspective view which is a figure which shows the external appearance of an integrated power converter device. 3 is a circuit block diagram illustrating a configuration of an inverter device 200. FIG. 3 is an exploded perspective view of an inverter device 200. FIG. (A) is a perspective view of the power semiconductor module 300a of this embodiment. (B) is sectional drawing when the power semiconductor module 300a of this embodiment is cut | disconnected in the cross section D, and it sees from the direction E. FIG. FIG. 6 is a diagram showing a power semiconductor module 300a in which a screw 309 and a second sealing resin 351 are removed from the state shown in FIG. 5 in order to help understanding. FIG. 5A is a perspective view, and FIG. 5B is a cross-sectional view taken along a section D and viewed from the direction E as in FIG. Further, (c) shows a cross-sectional view before the fin 305 is pressed and the bending portion 304A is deformed. It is a figure which shows the power semiconductor module 300a which removed the module case 304 from the state shown in FIG. 5A is a perspective view, and FIG. 5B is a cross-sectional view when viewed from a direction E cut along a cross-section D as in FIGS. 5B and 6B. FIG. 8 is a perspective view of a power semiconductor module 300a in which the first sealing resin 348 and the wiring insulating portion 608 are further removed from the state shown in FIG. It is a figure for demonstrating the assembly process of the module primary sealing body 302. FIG. FIG. 3 is an exploded perspective view of the inverter device 200 as viewed from the bottom side of the case 10. 1 is a diagram illustrating a circuit configuration of a DCDC converter device 100. FIG. 1 is an exploded perspective view of a DCDC converter device 100. FIG. It is sectional drawing of the power converter device which integrated the DCDC converter apparatus 100 and the inverter apparatus 200. FIG. 2 is a diagram schematically showing the arrangement of components in a case of a DCDC converter device 100. FIG. It is a perspective view of case 111 of the DCDC converter apparatus 100 which concerns on another Example. It is a perspective view of case 111 of the DCDC converter apparatus 100 which concerns on another Example. It is sectional drawing seen from the arrow direction of the cross section B of FIG. It is sectional drawing seen from the arrow direction of the cross section C of FIG. It is sectional drawing seen from the arrow direction of the cross section D of FIG.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  1 and 2 are perspective views showing the external appearance of the integrated power converter. The integrated power converter according to the present embodiment is obtained by integrating the DCDC converter device 100 and the inverter device 200. FIGS. 1 and 2 show the DCDC converter device 100 and the inverter device 200 in a separated state. It was. The DCDC converter device 100 is fixed to the case bottom surface side of the inverter device 200 by a plurality of bolts 113a and 113b. The bolt 113a is a bolt that is fixed to the DCDC converter device 100 from the inverter device 200 side, and the bolt 113b is a bolt that is fixed from the DCDC converter device 100 to the inverter device 200 side.

  The integrated power conversion device according to this embodiment is mainly applied to an electric vehicle or the like, and the inverter device 200 drives a traveling motor with electric power from an on-vehicle high voltage storage battery. The vehicle is equipped with a low voltage storage battery for operating auxiliary equipment such as a light and a radio, and the DCDC converter device 100 converts power from a high voltage storage battery to a low voltage storage battery or from a low voltage storage battery to a high voltage storage battery. Power conversion. If the power conversion device other than the electric vehicle has the same needs as the power conversion device for the electric vehicle, the integrated power conversion device according to the present embodiment can also be applied.

  As shown in FIG. 2, a flow path forming body 19 s that forms the refrigerant flow path 19 is housed in the case 10 of the inverter device 200. The refrigerant flows into the flow path from the inlet pipe 13 and flows out from the outlet pipe 14. The flow path forming body 19 s has an opening 404 connected to the refrigerant flow path 19. The case 111 of the DCDC converter device 100 is fixed to the case 10 of the inverter device 200 so that a part of the case 111 closes the opening 404. The case 111 may be fixed to the flow path forming body 19 s side in order to promote heat transfer from the case 111 to the refrigerant flow path 19. The case 111 of the DCDC converter device 100 forms a bottom surface portion 111b and a concave portion 111d described later.

  In the integrated power converter according to the present embodiment, the refrigerant flow path 19 has the inlet pipe 13 and the outlet pipe 14, and importance is placed on cooling the inverter device 200 that generates a larger amount of heat than the DCDC converter device 100. It has a configuration. With the configuration of the present embodiment, the cooling performance of the DCDC converter device 100 can be improved without significantly reducing the cooling performance on the inverter device 200 side.

  FIG. 3 is a circuit block diagram illustrating the configuration of the inverter device 200. In FIG. 3, an insulated gate bipolar transistor is used as a semiconductor element, and will be abbreviated as IGBT hereinafter. The IGBT 328 and the diode 156 that operate as the upper arm, and the IGBT 330 and the diode 166 that operate as the lower arm constitute the series circuit 150 of the upper and lower arms. The inverter circuit 140 includes the series circuit 150 corresponding to three phases of the U phase, the V phase, and the W phase of the AC power to be output.

  In this embodiment, these three phases correspond to the three-phase windings of the armature winding of motor generator MG1 corresponding to the traveling motor. The series circuit 150 of the upper and lower arms of each of the three phases outputs an alternating current from the intermediate electrode 169 that is the midpoint portion of the series circuit. Intermediate electrode 169 is connected to AC bus bar 802 which is an AC power line to motor generator MG1 through AC terminal 159 and AC terminal 188.

  The collector electrode 153 of the IGBT 328 of the upper arm is electrically connected to the capacitor terminal 506 on the positive electrode side of the capacitor module 500 via the positive electrode terminal 157. The emitter electrode of the IGBT 330 of the lower arm is electrically connected to the capacitor terminal 504 on the negative electrode side of the capacitor module 500 via the negative electrode terminal 158.

  As described above, the control circuit 172 receives a control command from the host control device via the connector 21, and based on this, the IGBT 328 that configures the upper arm or the lower arm of each phase series circuit 150 that constitutes the inverter circuit 140. And a control pulse that is a control signal for controlling the IGBT 330 is generated and supplied to the driver circuit 174.

  Based on the control pulse, the driver circuit 174 supplies a drive pulse for controlling the IGBT 328 and IGBT 330 constituting the upper arm or the lower arm of each phase series circuit 150 to the IGBT 328 and IGBT 330 of each phase. IGBT 328 and IGBT 330 perform conduction or cutoff operation based on the drive pulse from driver circuit 174, convert DC power supplied from battery 136 into three-phase AC power, and supply the converted power to motor generator MG1. Is done.

  The IGBT 328 includes a collector electrode 153, a signal emitter electrode 155, and a gate electrode 154. The IGBT 330 includes a collector electrode 163, a signal emitter electrode 165, and a gate electrode 164. A diode 156 is electrically connected between the collector electrode 153 and the emitter electrode 155. A diode 166 is electrically connected between the collector electrode 163 and the emitter electrode 165.

  As the switching power semiconductor element, a metal oxide semiconductor field effect transistor (hereinafter abbreviated as MOSFET) may be used. In this case, the diode 156 and the diode 166 are unnecessary. As a power semiconductor element for switching, IGBT is suitable when the DC voltage is relatively high, and MOSFET is suitable when the DC voltage is relatively low.

  The capacitor module 500 includes a capacitor terminal 506 on the positive electrode side, a capacitor terminal 504 on the negative electrode side, a power supply terminal 509 on the positive electrode side, and a power supply terminal 508 on the negative electrode side. The high-voltage DC power from the battery 136 is supplied to the positive-side power terminal 509 and the negative-side power terminal 508 via the DC connector 138, and the positive-side capacitor terminal 506 and the negative-side capacitor of the capacitor module 500. The voltage is supplied from the terminal 504 to the inverter circuit 140.

  On the other hand, the DC power converted from the AC power by the inverter circuit 140 is supplied to the capacitor module 500 from the positive capacitor terminal 506 and the negative capacitor terminal 504, and is connected to the positive power terminal 509 and the negative power terminal 508. Is supplied to the battery 136 via the DC connector 138 and accumulated in the battery 136.

  The control circuit 172 includes a microcomputer (hereinafter referred to as “microcomputer”) for calculating the switching timing of the IGBT 328 and the IGBT 330. The input information to the microcomputer includes a target torque value required for the motor generator MG1, a current value supplied from the series circuit 150 to the motor generator MG1, and a magnetic pole position of the rotor of the motor generator MG1.

  The target torque value is based on a command signal output from a host controller (not shown). The current value is detected based on a detection signal from the current sensor 180. The magnetic pole position is detected based on a detection signal output from a rotating magnetic pole sensor (not shown) such as a resolver provided in the motor generator MG1. In this embodiment, the current sensor 180 detects the current value of three phases, but the current value for two phases may be detected and the current for three phases may be obtained by calculation. .

  The microcomputer in the control circuit 172 calculates the d-axis and q-axis current command values of the motor generator MG1 based on the target torque value, the calculated d-axis and q-axis current command values, and the detected d The voltage command values for the d-axis and q-axis are calculated based on the difference between the current values for the axes and q-axis, and the calculated voltage command values for the d-axis and q-axis are calculated based on the detected magnetic pole position. It is converted into voltage command values for phase, V phase, and W phase. Then, the microcomputer generates a pulse-like modulated wave based on a comparison between the fundamental wave (sine wave) and the carrier wave (triangular wave) based on the voltage command values of the U phase, V phase, and W phase, and the generated modulation wave The wave is output to the driver circuit 174 as a PWM (pulse width modulation) signal.

  When driving the lower arm, the driver circuit 174 outputs a drive signal obtained by amplifying the PWM signal to the gate electrode of the corresponding IGBT 330 of the lower arm. Further, when driving the upper arm, the driver circuit 174 amplifies the PWM signal after shifting the level of the reference potential of the PWM signal to the level of the reference potential of the upper arm, and uses this as a drive signal as a corresponding upper arm. Are output to the gate electrodes of the IGBTs 328 respectively.

  In addition, the microcomputer in the control circuit 172 detects abnormality (overcurrent, overvoltage, overtemperature, etc.) and protects the series circuit 150. For this reason, sensing information is input to the control circuit 172. For example, information on the current flowing through the emitter electrodes of the IGBTs 328 and IGBTs 330 is input to the corresponding drive units (ICs) from the signal emitter electrode 155 and the signal emitter electrode 165 of each arm. Thereby, each drive part (IC) detects an overcurrent, and when an overcurrent is detected, the switching operation of the corresponding IGBT 328 and IGBT 330 is stopped, and the corresponding IGBT 328 and IGBT 330 are protected from the overcurrent.

  Information on the temperature of the series circuit 150 is input to the microcomputer from a temperature sensor (not shown) provided in the series circuit 150. In addition, voltage information on the DC positive side of the series circuit 150 is input to the microcomputer. The microcomputer performs over-temperature detection and over-voltage detection based on the information, and stops switching operations of all the IGBTs 328 and IGBTs 330 when an over-temperature or over-voltage is detected.

  The control signal received from the host control device via the connector 21 and the DC voltage received via the DC connector 138 pass through the interface cable 102, through the opening 201 of the inverter device 200 and through the opening 101 to the DCDC converter. Distributed to the device 100.

  FIG. 4 is an exploded perspective view of the inverter device 200. The flow path forming body 19s includes the flow path forming portions 12a, 12b, and 12c. The flow path forming portions 12 a, 12 b, and 12 c are arranged in a U shape on the bottom side in the case 10. The flow path forming portion 12c is disposed to face the flow path forming portion 12a in parallel.

  A plurality of openings 400 for mounting the power semiconductor modules 300a to 300c in the coolant channel are formed in the channel forming portions 12a and 12c that are parallel to each other. In the example shown in FIG. 4, two openings 400 into which the power semiconductor modules 300a and 300b are mounted are formed in the flow path forming portion 12a provided on the left side of the drawing. On the other hand, although not visible in the drawing, one opening 400 for mounting the power semiconductor module 300c is formed in the flow path forming portion 12c provided in parallel on the opposite side. These openings 400 are closed by fixing the power semiconductor modules 300a to 300c to the flow path forming portions 12a to 12c.

  A storage space 405 for storing the capacitor module 500 is formed between the first flow path portion 19a formed by the flow path forming body 12 and the other third flow path portion 19c. It is stored in the storage space 405. Thereby, the capacitor module 500 is cooled by the refrigerant flowing in the refrigerant flow path 19. Since the capacitor module 500 is disposed so as to be surrounded by the flow path forming portions 12a to 12c, it can be efficiently cooled.

  Further, since the flow path is formed along the outer surface of the capacitor module 500, the arrangement of the flow path, the capacitor module 500, and the power semiconductor module 300 is neatly arranged, and the whole becomes smaller.

  Above the capacitor module 500, a bus bar assembly 800 described later is disposed.

  By forming the flow path forming body 19s and the case 10 integrally by casting an aluminum material, the refrigerant flow path 19 has an effect of increasing the mechanical strength in addition to the cooling effect. Moreover, the flow path forming body 19s and the case 10 have an integral structure by being made by aluminum casting, the heat conduction of the entire inverter device 200 is improved, and the cooling efficiency is improved.

  The driver circuit board 22 is disposed above the bus bar assembly 800. A metal base plate 11 is disposed between the driver circuit board 22 and the control circuit board 20.

  The metal base plate 11 is fixed to the case 10. The metal base plate 11 functions as an electromagnetic shield for a group of circuits mounted on the driver circuit board 22 and the control circuit board 20 and also releases and cools the heat generated by the driver circuit board 22 and the control circuit board 20. have. The point that the metal base plate 11 has a high noise suppression function will be described later.

  The lid 8 is fixed to the metal base plate 11 to protect the control circuit board 20 from external electromagnetic noise.

  In the case 10 according to the present embodiment, the portion in which the flow path forming body 12 is housed has a substantially rectangular parallelepiped shape, but a protruding housing portion 10g is formed from one side of the case 10. A terminal extended from the DCDC converter device 100 and a resistor 450 are stored in the protruding storage portion 10g. Here, the resistor 450 is a resistor element for discharging the electric charge stored in the capacitor element of the capacitor module 500. As described above, since the electric circuit components between the battery 136 and the capacitor module 500 are concentrated in the protruding housing portion 10g, it is possible to suppress the complexity of wiring and contribute to downsizing of the entire apparatus. .

  A detailed configuration of the power semiconductor modules 300a to 300c used in the inverter circuit 140 will be described with reference to FIGS. The power semiconductor modules 300a to 300c have the same structure, and the structure of the power semiconductor module 300a will be described as a representative. 5 to 9, the signal terminal 325U corresponds to the gate electrode 154 and the signal emitter electrode 155 disclosed in FIG. 3, and the signal terminal 325L corresponds to the gate electrode 164 and the emitter electrode 165 disclosed in FIG. To do. The DC positive terminal 315B is the same as the positive terminal 157 disclosed in FIG. 3, and the DC negative terminal 319B is the same as the negative terminal 158 disclosed in FIG. The AC terminal 320B is the same as the AC terminal 159 disclosed in FIG.

  FIG. 5A is a perspective view of the power semiconductor module 300a of the present embodiment. FIG. 5B is a cross-sectional view of the power semiconductor module 300a according to the present embodiment cut along a cross section D and viewed from the direction E.

  FIG. 6 is a view showing the power semiconductor module 300a in which the screw 309 and the second sealing resin 351 are removed from the state shown in FIG. FIG. 6A is a perspective view, and FIG. 6B is a cross-sectional view taken along the section D and viewed from the direction E as in FIG. 5B. FIG. 6C shows a cross-sectional view before the fin 305 is pressed and the bending portion 304A is deformed.

  FIG. 7 is a diagram showing a power semiconductor module 300a in which the module case 304 is further removed from the state shown in FIG. FIG. 7A is a perspective view, and FIG. 7B is a cross-sectional view as seen from the direction E cut along the cross-section D in the same manner as FIGS. 5B and 6B.

  FIG. 8 is a perspective view of the power semiconductor module 300a in which the first sealing resin 348 and the wiring insulating portion 608 are further removed from the state shown in FIG.

FIG. 9 is a view for explaining an assembly process of the module primary sealing body 302.
As shown in FIGS. 7 and 8, the power semiconductor elements (IGBT 328, IGBT 330, diode 156, and diode 166) constituting the upper and lower arm series circuit 150 are connected by the conductor plate 315 or conductor plate 318, or by the conductor plate 320 or conductor plate. By 319, it is fixed by being sandwiched from both sides. The conductor plate 315 and the like are sealed with the first sealing resin 348 with the heat dissipation surface exposed, and the insulating sheet 333 is thermocompression bonded to the heat dissipation surface. As shown in FIG. 7, the first sealing resin 348 has a polyhedral shape (here, a substantially rectangular parallelepiped shape).

  The module primary sealing body 302 sealed with the first sealing resin 348 is inserted into the module case 304 and sandwiched with the insulating sheet 333, and is thermocompression bonded to the inner surface of the module case 304 that is a CAN type cooler. The Here, the CAN-type cooler is a cylindrical cooler having an insertion port 306 on one surface and a bottom on the other surface. The gap remaining inside the module case 304 is filled with the second sealing resin 351.

  The module case 304 is made of a member having electrical conductivity, for example, an aluminum alloy material (Al, AlSi, AlSiC, Al—C, etc.), and is integrally formed without a joint. The module case 304 has a structure in which no opening other than the insertion port 306 is provided, and the outer periphery of the insertion port 306 is surrounded by a flange 304B. Further, as shown in FIG. 5 (a), the first heat radiating surface 307A and the second heat radiating surface 307B, which are wider than the other surfaces, are arranged facing each other so as to face these heat radiating surfaces. Each power semiconductor element (IGBT 328, IGBT 330, diode 156, diode 166) is arranged. The three surfaces that connect the first heat radiation surface 307A and the second heat radiation surface 307B that face each other constitute a surface that is sealed with a narrower width than the first heat radiation surface 307A and the second heat radiation surface 307B, and the other one side surface An insertion port 306 is formed at the bottom. The shape of the module case 304 does not need to be an accurate rectangular parallelepiped, and the corners may form a curved surface as shown in FIG.

  By using the metal case having such a shape, even when the module case 304 is inserted into the refrigerant flow path 19 through which a refrigerant such as water or oil flows, a seal against the refrigerant can be secured by the flange 304B. It is possible to prevent the medium from entering the inside of the module case 304 with a simple configuration. Further, the fins 305 are uniformly formed on the first heat radiation surface 307A and the second heat radiation surface 307B facing each other. Further, a curved portion 304A having an extremely thin thickness is formed on the outer periphery of the first heat radiating surface 307A and the second heat radiating surface 307B. Since the curved portion 304A is extremely thin to such an extent that it can be easily deformed by pressurizing the fin 305, the productivity after the module primary sealing body 302 is inserted is improved.

  As described above, the gap between the conductor plate 315 and the inner wall of the module case 304 can be reduced by thermocompression bonding the conductor plate 315 and the like to the inner wall of the module case 304 via the insulating sheet 333, and the power semiconductor The generated heat of the element can be efficiently transmitted to the fin 305. Further, by providing the insulating sheet 333 with a certain degree of thickness and flexibility, the generation of thermal stress can be absorbed by the insulating sheet 333, which is favorable for use in a power conversion device for a vehicle having a large temperature change. .

  Outside the module case 304, a metallic DC positive wiring 315A and a DC negative wiring 319A for electrical connection with the capacitor module 500 are provided, and a DC positive terminal 315B (157) and a DC are connected to the tip thereof. Negative terminals 319B (158) are formed respectively. Also, a metallic AC wiring 320A for supplying AC power to motor generator MG1 or MG2 is provided, and an AC terminal 320B (159) is formed at the tip thereof. In the present embodiment, as shown in FIG. 8, the DC positive wiring 315A is connected to the conductor plate 315, the DC negative wiring 319A is connected to the conductor plate 319, and the AC wiring 320A is connected to the conductor plate 320.

  In addition to the module case 304, metal signal wirings 324U and 324L for electrical connection with the driver circuit 174 are provided, and the signal terminals 325U (154, 155) and the signal terminals 325L are provided at the front ends thereof. (164, 165) are formed. In the present embodiment, as shown in FIG. 8, the signal wiring 324U is connected to the IGBT 328, and the signal wiring 324L is connected to the IGBT 328.

  The DC positive wiring 315A, the DC negative wiring 319A, the AC wiring 320A, the signal wiring 324U, and the signal wiring 324L are integrally molded as the auxiliary mold body 600 in a state where they are insulated from each other by the wiring insulating portion 608 formed of a resin material. Is done. The wiring insulating portion 608 also acts as a support member for supporting each wiring, and a thermosetting resin or a thermoplastic resin having an insulating property is suitable for the resin material used therefor. As a result, it is possible to secure insulation between the DC positive electrode wiring 315A, the DC negative electrode wiring 319A, the AC wiring 320A, the signal wiring 324U, and the signal wiring 324L, thereby enabling high-density wiring.

  The auxiliary mold body 600 is fixed to the module case 304 with a screw 309 that passes through a screw hole provided in the wiring insulating portion 608 after being metal-bonded to the module primary sealing body 302 at the connection portion 370. For example, TIG welding or the like can be used for metal bonding between the module primary sealing body 302 and the auxiliary mold body 600 in the connection portion 370.

  The direct current positive electrode wiring 315A and the direct current negative electrode wiring 319A are stacked on each other in a state of facing each other with the wiring insulating portion 608 interposed therebetween, and have a shape extending substantially in parallel. With such an arrangement and shape, the current that instantaneously flows during the switching operation of the power semiconductor element flows oppositely and in the opposite direction. As a result, the magnetic fields produced by the currents cancel each other out, and this action can reduce the inductance. The AC wiring 320A and the signal terminals 325U and 325L also extend in the same direction as the DC positive wiring 315A and the DC negative wiring 319A.

  The connection part 370 where the module primary sealing body 302 and the auxiliary mold body 600 are connected by metal bonding is sealed in the module case 304 by the second sealing resin 351. Thereby, since a necessary insulation distance can be stably ensured between the connection part 370 and the module case 304, the power semiconductor module 300a can be reduced in size as compared with the case where sealing is not performed.

  As shown in FIG. 8, on the auxiliary module 600 side of the connecting portion 370, the auxiliary module side DC positive connection terminal 315C, the auxiliary module side DC negative connection terminal 319C, the auxiliary module side AC connection terminal 320C, and the auxiliary module side signal connection are provided. Terminals 326U and auxiliary module side signal connection terminals 326L are arranged in a line. On the other hand, on the module primary sealing body 302 side of the connecting portion 370, along one surface of the first sealing resin 348 having a polyhedral shape, the element side DC positive connection terminal 315D, the element side DC negative connection terminal 319D, The element side AC connection terminal 320D, the element side signal connection terminal 327U, and the element side signal connection terminal 327L are arranged in a line. Thus, the structure in which the terminals are arranged in a row in the connection portion 370 facilitates the manufacture of the module primary sealing body 302 by transfer molding.

  Here, the positional relationship of each terminal when the portion extending outward from the first sealing resin 348 of the module primary sealing body 302 is viewed as one terminal for each type will be described. In the following description, a terminal constituted by the DC positive electrode wiring 315A (including the DC positive electrode terminal 315B and the auxiliary module side DC positive electrode connection terminal 315C) and the element side DC positive electrode connection terminal 315D is referred to as a positive electrode side terminal. A terminal composed of the DC negative electrode terminal 319B (including the auxiliary module side DC negative electrode connection terminal 319C) and the element side DC negative electrode connection terminal 315D is referred to as a negative electrode side terminal, and AC wiring 320A (AC terminal 320B and auxiliary module side AC connection) The terminal composed of the terminal 320C and the element side AC connection terminal 320D is referred to as an output terminal, and is composed of the signal wiring 324U (including the signal terminal 325U and the auxiliary module side signal connection terminal 326U) and the element side signal connection terminal 327U. Is called the upper arm signal terminal. It refers to a line 324L (including signal terminals 325L and the auxiliary module-side signal connecting terminals 326L) and the terminal constituted by the element-side signal connecting terminals 327L and the signal terminal for the lower arm.

  Each of the above terminals protrudes from the first sealing resin 348 and the second sealing resin 351 through the connecting portion 370, and each protruding portion from the first sealing resin 348 (element side DC positive electrode connecting terminal 315D). , Element side DC negative electrode connection terminal 319D, element side AC connection terminal 320D, element side signal connection terminal 327U and element side signal connection terminal 327L) are one surface of the first sealing resin 348 having a polyhedral shape as described above. Are lined up in a row. Further, the positive electrode side terminal and the negative electrode side terminal protrude in a stacked state from the second sealing resin 351 and extend outside the module case 304. With such a configuration, the power semiconductor element and the terminal are connected during mold clamping when the module primary sealing body 302 is manufactured by sealing the power semiconductor element with the first sealing resin 348. It is possible to prevent an excessive stress on the portion and a gap in the mold from occurring. Further, since the magnetic fluxes in the directions canceling each other are generated by the currents in the opposite directions flowing through each of the stacked positive electrode side terminals and negative electrode side terminals, the inductance can be reduced.

  On the auxiliary module 600 side, the auxiliary module side DC positive electrode connection terminal 315C and the auxiliary module side DC negative electrode connection terminal 319C are the DC positive electrode terminal 315B and the tips of the DC positive electrode wiring 315A and the DC negative electrode wiring 319A opposite to the DC negative electrode terminal 319B. It is formed in each part. Further, the auxiliary module side AC connection terminal 320C is formed at the tip of the AC wiring 320A opposite to the AC terminal 320B. The auxiliary module side signal connection terminals 326U and 326L are formed at the distal ends of the signal wirings 324U and 324L opposite to the signal terminals 325U and 325L, respectively.

  On the other hand, on the module primary sealing body 302 side, the element side DC positive connection terminal 315D, the element side DC negative connection terminal 319D, and the element side AC connection terminal 320D are formed on the conductor plates 315, 319, and 320, respectively. The element side signal connection terminals 327U and 327L are connected to the IGBT 328 and the IGBT 330, respectively, by bonding wires 371.

  As shown in FIG. 9, the DC positive electrode side conductor plate 315 and the AC output side conductor plate 320 and the element side signal connection terminals 327 </ b> U and 327 </ b> L are connected to a common tie bar 372 and are substantially the same. It is integrally processed so as to have a planar arrangement. To the conductor plate 315, the collector electrode of the IGBT 328 on the upper arm side and the cathode electrode of the diode 156 on the upper arm side are fixed. The conductor plate 320 is fixedly attached with a collector electrode of the IGBT 330 on the lower arm side and a cathode electrode of the diode 166 on the lower arm side. On the IGBTs 328 and 330 and the diodes 155 and 166, the conductor plate 318 and the conductor plate 319 are arranged in substantially the same plane. To the conductor plate 318, the emitter electrode of the IGBT 328 on the upper arm side and the anode electrode of the diode 156 on the upper arm side are fixed. On the conductor plate 319, an emitter electrode of the IGBT 330 on the lower arm side and an anode electrode of the diode 166 on the lower arm side are fixed. Each power semiconductor element is fixed to an element fixing portion 322 provided on each conductor plate via a metal bonding material 160. The metal bonding material 160 is, for example, a low-temperature sintered bonding material including a solder material, a silver sheet, and fine metal particles.

  Each power semiconductor element has a flat plate-like structure, and each electrode of the power semiconductor element is formed on the front and back surfaces. As shown in FIG. 9, each electrode of the power semiconductor element is sandwiched between the conductor plate 315 and the conductor plate 318, or the conductor plate 320 and the conductor plate 319. In other words, the conductor plate 315 and the conductor plate 318 are stacked so as to face each other substantially in parallel via the IGBT 328 and the diode 156. Similarly, the conductor plate 320 and the conductor plate 319 have a stacked arrangement facing each other substantially in parallel via the IGBT 330 and the diode 166. In addition, the conductor plate 320 and the conductor plate 318 are connected via an intermediate electrode 329. By this connection, the upper arm circuit and the lower arm circuit are electrically connected to form an upper and lower arm series circuit. As described above, the IGBT 328 and the diode 156 are sandwiched between the conductor plate 315 and the conductor plate 318, and the IGBT 330 and the diode 166 are sandwiched between the conductor plate 320 and the conductor plate 319, so that the conductor plate 320 and the conductor plate 318 are connected to the intermediate electrode. Connect via H.329. Thereafter, the control electrode 328A of the IGBT 328 and the element side signal connection terminal 327U are connected by the bonding wire 371, and the control electrode 330A of the IGBT 330 and the element side signal connection terminal 327L are connected by the bonding wire 371.

  FIG. 10 is an exploded perspective view of the inverter device 200 as viewed from the bottom side of the case 10. The case 10 has a rectangular parallelepiped shape including four side walls 10a, 10b, 10c, and 10d. The U-shaped refrigerant channel 19 includes three linear channel portions (a first channel portion 19a, a second channel portion 19b, and a third channel portion 19c). The opening 404 is also U-shaped, and the opening 404 is closed by the case 111 of the DCDC converter device 100. A seal member 409 is provided between the case 111 and the case 10 to maintain the airtightness of the refrigerant flow path.

  The portion indicated by reference numeral 10 e forms the bottom of a storage space 405 (see FIG. 4) that stores the capacitor module 500.

  The refrigerant flows into the inlet pipe 13 as indicated by the arrow 417 and flows in the direction of the arrow 418 through the first flow path portion 19 a formed along the longitudinal side of the case 10. Further, the refrigerant flows in the direction of the arrow 421 in the second flow path portion 19 b formed along the short side of the case 10. The second flow path portion 19b forms a folded flow path. Further, the refrigerant flows through the third flow path portion 19 c of the flow path forming portion 12 formed along the longitudinal side of the case 10. The third flow path portion 19c is provided in parallel with the first flow path portion 19a with the capacitor module 500 interposed therebetween. The refrigerant flows out from the outlet pipe 14 as indicated by an arrow 423.

  The first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c are all formed larger in the depth direction than in the width direction.

  Next, the DCDC converter device 100 will be described. FIG. 11 is a diagram illustrating a circuit configuration of the DCDC converter device 100. As shown in FIG. 11, the DCDC converter device 100 of the present embodiment is compatible with bidirectional DCDC that performs step-down and step-up. Therefore, the step-down circuit (HV circuit) and the step-up circuit (LV circuit) have a synchronous rectification configuration rather than a diode rectification. Further, in order to obtain a high output by HV / LV conversion, a large current component is employed for the switching element and the smoothing coil is increased in size.

  Specifically, an H-bridge type synchronous rectification switching circuit configuration (H1 to H4) using a MOSFET having a recovery diode on both the HV / LV sides was adopted. In switching control, an LC series resonance circuit (Cr, Lr) is used to perform zero-cross switching at a high switching frequency (100 kHz) to improve conversion efficiency and reduce heat loss. In addition, an active clamp circuit is provided to reduce loss due to circulating current during step-down operation, and to reduce the breakdown voltage of switching elements by suppressing the generation of surge voltage during switching, thereby reducing the breakdown voltage of circuit components. By downsizing, the device is downsized.

  Furthermore, in order to ensure high output on the LV side, a full-wave rectification type double current (current doubler) method is adopted. In addition, in order to increase output, high output is ensured by operating a plurality of switching elements simultaneously in parallel. In the example of FIG. 11, four elements are arranged in parallel like SWA1 to SWA4 and SWB1 to SWB4. Further, the switching circuit and the small reactors (L1, L2) of the smoothing reactor are arranged in two circuits in parallel so as to have symmetry, thereby increasing the output. As described above, by arranging the small reactors in two circuits, it is possible to reduce the size of the entire DCDC converter device as compared with the case where one large reactor is arranged.

  In the lower part of the circuit configuration diagram of FIG. 11, a drive circuit and an operation detection circuit for a step-down circuit and a step-up circuit, and a control circuit unit that performs a communication function with a host control unit via an inverter device are shown. By using the inverter device for communication with the higher-level control device, the communication interface with the higher-level control device can be shared even in cases where the inverter device and the DCDC converter device are integrated, or in the case of a single inverter device configuration. It becomes possible.

  12, 13 and 14 are diagrams for explaining the component arrangement in the DCDC converter apparatus 100. FIG. FIG. 12 is an exploded perspective view of the DCDC converter device 100. FIG. 13 is a cross-sectional view of a power conversion device in which the DCDC converter device 100 and the inverter device 200 are integrated. FIG. 14 is a diagram schematically showing the arrangement of components in the case of the DCDC converter device 100.

  As shown in FIG. 12, the circuit components of the DCDC converter device 100 are housed in a case 111 made of metal (for example, made of aluminum die casting). A case cover 112 is bolted to the opening of the case 111. A main transformer 33, an inductor element 34, a power semiconductor module 35 on which switching elements H1 to H4 are mounted, a booster circuit board 32 on which a switching element 36 is mounted, a capacitor 38, and the like are placed on the bottom surface portion in the case 111. Has been. The main heat generating components are a main transformer 33, an inductor element 34, a power semiconductor module 35, and a switching element 36.

  When the correspondence with the circuit diagram of FIG. 11 is described, the main transformer 33 is the transformer Tr, the inductor element 34 is the reactors L1 and L2 of the current doubler, and the switching element 36 is the switching elements SWA1 to SWA4 and SWB1 to SWB4, respectively. It corresponds. On the booster circuit board 32, the switching elements S1, S2 and the like of FIG. 11 are also mounted.

  Terminals 39 of the switching elements H <b> 1 to H <b> 4 extend to the opening side of the case 111 and are connected to the step-down circuit board 31 disposed above the power semiconductor module 35. The step-down circuit board 31 is fixed on a plurality of support members protruding upward from the bottom surface of the case 111. In the power semiconductor module 35, the switching elements H1 to H4 are mounted on a metal substrate on which a pattern is formed, and the back surface side of the metal substrate is fixed so as to be in close contact with the bottom surface of the case. The booster circuit board 32 on which the switching element 36 is mounted is also composed of a similar metal substrate. In FIG. 12, since the booster circuit board 32 is hidden behind the capacitor 38 and cannot be seen, it is indicated by a broken line.

  On the control circuit board 30, the control circuit board 30 on which a control circuit for controlling switching elements provided in the booster circuit and the step-down circuit is mounted is fixed on a metal base plate 37. The base plate 37 is fixed to a plurality of support portions 111 a protruding upward from the bottom surface portion of the case 111. As a result, the control circuit board 30 is disposed via the base plate 37 above the heat generating components (the main transformer 33, the inductor element 34, the power semiconductor module 35, and the like) disposed on the bottom surface of the case.

  With reference to FIGS. 13 and 14, the arrangement of components provided in DCDC converter apparatus 100 will be described. FIG. 13 is a cross-sectional view of the cross-section A in FIG. As described above, the flow path forming portions 12a to 12c are provided in the case 10 of the inverter device 200 along the side walls 10a, 10b, and 10c. In the cross-sectional view shown in FIG. 13, only the flow path forming portions 12a and 12c are shown.

  A first flow path portion 19a is formed in the flow path forming portion 12a along the side wall 10a, and a second flow path portion 19b is formed in the flow path forming portion 12b along the side wall 10b. A third flow path portion 19c is formed in the path forming portion 12c. The power semiconductor module 300a is inserted into the first flow path portion 19a, and the power semiconductor module 300c is inserted into the third flow path portion 19c.

  In the case 111 of the DCDC converter device 100, a recess 111 d is formed on the outer peripheral surface of the bottom surface of the case 111. As shown in FIG. 1, the recess 111 d of the case 111 faces the first flow path portion 19 a, the second flow path portion 19 b, and the third flow path portion 19 c provided on the outer peripheral surface of the bottom portion of the case 10.

  The main transformer 33 is fixed to the inner peripheral surface of the case 111 facing the first flow path portion 19a. On the other hand, the booster circuit board 32 and the capacitor 38 mounted on the switching element 36 are fixed to the inner peripheral surface of the case 111 facing the third flow path portion 19c.

  The base plate 37 is bolted onto a support portion 111 a formed on the case 111. The control circuit board 30 is fixed on a convex portion 37 a formed on the upper surface of the base plate 37 by a bolt or the like. A case cover 112 is attached to the opening of the case 111, and the case 111 is sealed.

  The recess 111 d of the case 111 forms a part of the wall of the refrigerant flow path 19 of the case 10 of the inverter device 200. For this reason, the case 111 is directly cooled by the refrigerant flowing through the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c.

  Moreover, cooling is effectively performed by fixing a component having a large calorific value among the components of the DCDC converter device 100 to the bottom surface portion of the case 111. Further, since the base plate 37 is made of metal, heat generated in the control circuit board 30 is transmitted to the case 10 via the support portion 111 a and the case 111. In addition, the base plate 37 functions as a shielding member for radiant heat from the heat generating components provided on the bottom surface portion of the case 111, and also functions as a shield for shielding switching radiation noise from the switching element by using a copper material or the like. To do.

  The case 10 of the inverter device 200 has an opening 201, and the case 111 of the DCDC converter device 100 has an opening 101 on the surface facing the case 10. The joining member 103 is fitted into the opening 101 and the opening 201. A seal member 104 is provided between the bonding member 103 and the case 10 and between the bonding member 103 and the case 111, and maintains airtightness with the outside.

  The power conducting wire 701 transmits driving power to a driving circuit unit that generates a driving voltage for a switching element such as the step-down circuit unit 31. The communication conductor 702 transmits a signal for driving the drive circuit unit. In the present embodiment, a cable that functions as an interface between the inverter device 200 and the DCDC converter device 100 such as the power conducting wire 701 and the communication conducting wire 702 is defined as an interface cable.

  This interface cable connects the inverter device 200 and the DCDC converter device 100 through a through hole formed in the joining member 103. In other words, the interface cable connects the inverter device 200 and the DCDC converter device 100 through the opening 201 and the opening 101. In the present embodiment, the surface on which the opening 201 and the opening 101 are formed is formed so that the case 10 and the case 111 face each other and the interface cable is covered with the metal case 10 and the case 111. . Thereby, the case 10 and the case 111 have an enhanced electromagnetic shield, and electromagnetic noise radiated from the opening 201 and the opening 101 can be reduced.

  The case 111 has recesses 111d formed in portions facing the first channel portion 19a, the second channel portion 19b, and the third channel portion 19c. Thereby, the part in which the recessed part 111d was formed becomes thin, and the cooling by the side of the DCDC converter apparatus 100 can be accelerated | stimulated.

  The plan view of FIG. 14 shows the arrangement of the heat generating components provided on the bottom surface portion 111b of the case 111, and shows a state where the case cover 112 is removed. The broken lines indicate the arrangement of the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c provided in the case 10 of the inverter device 200.

  The main transformer 33 and the two inductor elements 34 are disposed on the case bottom face facing the first flow path portion 19a. Further, the power semiconductor module 35 and the step-down circuit board 31 constituting the step-down circuit are mainly disposed on the bottom surface portion 111b facing the second flow path portion 19b. The switching element 36 and the booster circuit board 32 constituting the booster circuit are disposed on the bottom surface portion 111b facing the third flow path portion 19c. In this way, components with a relatively large calorific value are arranged at positions facing the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c so as to increase the cooling efficiency.

  In particular, when the power semiconductor module 35 is disposed on the bottom surface of the case 111 so as to face the second flow path portion 19b, the temperature rise of the MOSFET in the power semiconductor module 35 can be suppressed, and the performance of the DCDC converter device 100 can be reduced. It becomes easy to demonstrate.

  Further, when the main transformer 33 is disposed on the bottom surface of the case 111 so as to face the first flow path portion 19a, the temperature rise of the winding of the main transformer 33 can be suppressed, and the performance of the DCDC converter device 100 is exhibited. It becomes easy.

  In order to exhibit the same operation and effect as the present embodiment, a cover for closing the opening 404 of the case 10 of the inverter device 200 is provided, and the case of the DCDC converter device 100 is provided so that the heat conduction of the cover is good. 111 may be integrated.

  15 to 19 are diagrams showing another embodiment of the case 111 of the DCDC converter device 100. FIG.

  FIG. 15 is a perspective view of the case 111 of the DCDC converter apparatus 100 according to another embodiment. In the present embodiment, the case 111 of the DCDC converter device 100 has a recess 111e. FIG. 17 is a cross-sectional view of the cross-section B of FIG. 18 is a cross-sectional view seen from the direction of the arrow of the cross section C of FIG.

  The concave portion 111d according to the present embodiment is disposed at a position facing the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c, as in the above-described example. The recess 111e is formed in a portion different from the recess 111d, and is disposed at a position sandwiched between the recesses 111d. The recess 111e faces the bottom 10e of the case 10 of the inverter device 200. A space formed by the concave portion 111e and the bottom portion 10e is connected to the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c. As a result, the refrigerant flowing through the first flow path portion 19a, the second flow path portion 19b, and the third flow path portion 19c flows into the space formed by the recess 111e and the bottom portion 10e. Therefore, the cooling performance of the center part of the bottom part 10e arrange | positioned in the position far from a flow-path part can be improved. In the present embodiment, it is possible to improve the cooling conditions for the capacitor module 500 and the booster circuit board 32 located at the center of the bottom surface 10e. In addition, the temperature of the switching element 36 on the booster circuit board 32 can be reduced. In addition, the weight of the case 111 can be reduced.

  As shown in FIG. 17, a protrusion 105 that protrudes toward the inverter device 200 is provided at the opening 101 of the DCDC converter device 100 so that the joining member 103 described in the above embodiment is not necessary. In addition, the seal member 104 maintains airtightness with the outside of the inverter device 200.

  FIG. 16 is a perspective view of the case 111 of the DCDC converter apparatus 100 according to another embodiment. The case 111 of the DCDC converter device 100 has a recess 111e and a protrusion 111f. FIG. 19 is a cross-sectional view of the cross section D of FIG.

  The recess 111e has the same configuration and function as in the previous embodiment. The convex part 111f protrudes toward the second flow path part 19b explained in the above-described embodiment. Thereby, it is promoted that the cooling refrigerant flowing through the second flow path portion 19b flows around the recess 111e. In addition, the detour flow rate which flows into the recessed part 111e side increases, so that the height of this convex part 111f is high. Therefore, the height of the convex 111f can be set according to the electronic component cooled by the concave 111e.

  The above description is merely an example, and when interpreting the invention, there is no limitation or restriction on the correspondence between the items described in the above embodiment and the items described in the claims. For example, in the above-described embodiment, the power conversion device mounted on a vehicle such as PHEV or EV has been described as an example. However, the present invention is not limited thereto, and is also applied to a power conversion device used for a vehicle such as a construction machine. can do.

10, 111 Cases 10a to 10d Side wall 10f Side face 19 Refrigerant flow path 19a First flow path part 19b Second flow path part 19c Third flow path part 20, 30 Control circuit board 33 Main transformer 34 Inductor element 35 Power semiconductor module 36 Switching Element 37 Base plate 100 DCDC converter device 101, 201 Opening portion 103 Joint member 104, 409 Seal member 111a Support portion 111b Bottom portion 111d, 111e Concave portion 111f Convex portion 200 Inverter device

Claims (9)

An integrated power converter that connects a first power converter and a second power converter,
The first power converter, houses a first power semiconductor module for converting power, a channel shape adult of forming a flow path cooling refrigerant flows, the flow path forming member and the first power semiconductor module 1 case, an inlet pipe connected to the flow path, and an outlet pipe connected to the flow path,
The second power conversion device includes: a second power semiconductor module that converts power; a second case that houses the second power semiconductor module;
The flow path forming body has an opening connected to the flow path,
The second case is fixed to the flow path forming body or the first case so that a part of the second case closes the opening,
The first power conversion device outputs an alternating current that drives a vehicle driving motor,
The second power converter includes a high voltage side switching element housed in the second power semiconductor module and connected to a high voltage power supply, a low voltage side semiconductor element connected to a low voltage power supply, a transformer circuit, A drive circuit unit for driving the high-voltage side switching element and the low-voltage side semiconductor element, a power conductor for transmitting drive power of the drive circuit unit, and a communication conductor for transmitting a signal for driving the drive circuit unit A DC-DC converter having
The first case has a first opening,
The second case has a second opening on a surface facing the first case,
The second opening is provided to face the first opening,
The power conducting wire and the communication conducting wire pass through the first opening and the second opening, and obtain the driving power and driving signal of the driving circuit unit from the first power converter side,
The said 2nd case is an integrated power converter device which has a convex part fitted by the said 1st opening part. An integrated power converter according to claim 1,
An integrated power conversion device in which a part of the second case that closes the opening forms a recess in a portion facing the flow path. An integrated power converter according to claim 1,
A portion of the second case that closes the opening forms a recess in a portion different from the portion facing the flow path,
The recessed portion is an integrated power converter connected to the flow path. An integrated power conversion device according to claim 3,
A portion of the second case that closes the opening has a protrusion that protrudes into the flow path,
The convex portion is an integrated power conversion device that bypasses the cooling refrigerant flowing in the flow path to the concave portion of the second case. The integrated power converter according to any one of claims 1 to 4,
The said 2nd power semiconductor module is an integrated power converter device arrange | positioned at the bottom face of the said 2nd case so that the said flow path may be opposed. An integrated power converter according to any one of claims 1 to 5,
The first power conversion device outputs an alternating current that drives a vehicle driving motor,
The second power converter includes a high voltage side switching element housed in the second power semiconductor module and connected to a high voltage power supply, a low voltage side semiconductor element connected to a low voltage power supply, a transformer circuit, A DC-DC converter having
The transformer circuit is an integrated power converter disposed on the bottom surface of the second case so as to face the flow path. An integrated power converter according to claim 6,
The flow path forming body has a first flow path and a second flow path formed in parallel with the first flow path,
The transformer circuit is disposed on the bottom surface of the second case so as to face the first flow path,
The said 2nd power semiconductor module is an integrated power converter device arrange | positioned at the bottom face of the said 2nd case so that the said 2nd flow path may be opposed. An integrated power converter according to claim 7,
The flow path forming body has a third flow path connecting the first flow path and the second flow path,
The low-voltage side semiconductor element is an integrated power conversion device disposed on the bottom surface of the second case so as to face the third flow path. A integrated power converter according to claim 7,
The first power conversion device includes a capacitor that smoothes a direct current supplied to the first power semiconductor module;
The capacitor is an integrated power conversion device sandwiched between the first flow path and the second flow path.