JP5590454B2 - Electrical element, integrated element and electronic circuit - Google Patents

Description

  The present invention relates to an electric element, an integrated element, and an electronic circuit having temperature dependency.

  With regard to the production of semiconductor elements such as ICs and LSIs, the introduction of production equipment sold by semiconductor device manufacturers has lowered the barrier to entry into semiconductor element production, and production bases have become global. As a result, the price of semiconductor elements is very low. In addition, a large number of sensors and the like that are incorporated in semiconductors such as CMOS with uniform characteristics are produced by MEMS (Micro Electro Mechanical System) technology using a manufacturing process of a semiconductor integrated circuit. The current mainstream of sensor production equipment is diverting such IC and LSI production equipment. In the manufacturing process of a semiconductor integrated circuit, in order to calibrate the reaction amount obtained by the sensor into a value converted into a physical quantity such as a voltage, the reaction amount at the sensor is compared with a reference measurement standard. Temperature calibration for graduation is required.

  The sensor here is a sensor having temperature dependency, for example, a pressure sensor or a temperature sensor that can output a measurement value in consideration of a temperature change. The temperature calibration of this temperature-dependent pressure sensor is performed by setting the pressure sensor in the tester and comparing the pressure output value of the pressure sensor output by the inspector or user with the temperature change with the data of the existing pressure output value. It is done by doing. The temperature sensor includes a thermocouple, a platinum resistance temperature detector, a thermistor, and the like. Among these, temperature calibration will be described by taking a thermocouple temperature sensor that is widely used as it is inexpensive and has a wide measurement range as an example. This thermocouple measures the weak thermoelectromotive force generated according to the temperature difference between the two ends when a temperature is applied to the joint where one end of two different types of metal wires are joined (paired). It is a temperature sensor which outputs the temperature value corresponding to. That is, such a temperature sensor outputs a thermoelectromotive force corresponding to a temperature change. In order for the temperature sensor to accurately measure the temperature, it is necessary to calibrate the temperature. As a general method for temperature calibration, a temperature sensor is placed in a thermostatic chamber under a constant environment, and the thermoelectromotive force output from the thermocouple of the temperature sensor is changed by changing the temperature in the thermostatic chamber. Measure and compare the measured thermoelectromotive force with the standard value of thermoelectromotive force against temperature change. Then, the temperature calibration of each temperature sensor is performed using this comparison value as a correction value.

  As a method for calibrating the temperature of the thermal analyzer using the thermocouple temperature sensor, the one described in Patent Document 1 is known. In the method for temperature calibration described in Patent Document 1, a temperature reference material having a known phase transition temperature and a thermocouple temperature sensor are installed in a heating furnace. When the temperature in the heating furnace is changed, an endothermic reaction of the temperature standard material occurs near the temperature corresponding to the melting point of the temperature standard material. This endothermic reaction of the temperature standard substance is detected as an inflection point in the linear output change of the thermocouple. The temperature when the output of the inflection point is detected is set as a temperature standard that is a melting point temperature, and the temperature value of the thermocouple is calibrated with a correction value calculated based on the temperature standard.

  A method described in Patent Document 2 is also known as another method for performing temperature calibration. In the apparatus described in Patent Document 2, a standard material is connected in series to a heater that heats the inside of the high-pressure and high-temperature apparatus to an appropriate temperature, and the input power to the heater is adjusted while detecting the temperature in the high-pressure and high-temperature apparatus. . Then, the inside of the high-pressure and high-temperature apparatus is heated by the heater, and the occurrence of the phase transition of the standard material is detected by the change in the electric resistance of the heater or the voltage / current to the heater, and the temperature at that time is detected. Then, temperature calibration is performed based on the input power to the heater at that time.

  However, according to Patent Document 1, the temperature calibration process is performed by transporting the temperature standard material into the heating furnace, and therefore the calibration accuracy depends on the position accuracy of the temperature standard material with respect to the thermocouple. For this reason, in order to increase the calibration accuracy, the position accuracy must be increased, and the cost of the element itself is increased due to equipment investment or the like for increasing the position accuracy. In Patent Document 1, when temperature calibration is performed after the temperature sensor is incorporated into a product, the user performs the temperature calibration by removing the temperature sensor from the product, and this complicated temperature calibration itself is a burden on the user. It was. According to Patent Document 2, since the heater and the phase change material are electrically connected in series, in addition to the change in electrical conductivity due to the phase transition of the phase change material, the change in the electrical conductivity of the heater. Also occurs. For this reason, even if the phase transition temperature of the phase change material can be detected and calibrated at that temperature, there has been a problem that the accuracy of temperature calibration is lowered due to the influence accompanying the change in the electric conductivity of the heater.

  In any patent document, a large-scale facility having a temperature standard that is a constant temperature environment controlled to a constant temperature is required. Furthermore, among sensors that handle heat, such as temperature sensors and humidity sensors, high-precision sensors that require high accuracy require fine temperature calibration, which requires a complicated process compared to general-purpose sensor temperature calibration. It was. For this reason, a highly accurate sensor is transported into a stable constant temperature environment tank where the temperature standard is constant, and it takes a long time to finely change the temperature and perform temperature calibration, resulting in poor production efficiency. Compared to the fact that other elements can be set quickly with a simple electric transmission device or optical device, the high-precision sensor described above is a bottleneck to handle in large quantities in the mass production process. It cannot be reduced. For this reason, the cost required for temperature calibration is added, and the price of the temperature sensor body required for temperature calibration is several times to several tens of times the price of the temperature sensor body not required for temperature calibration. In particular, in order to produce a highly accurate product, it took a considerable amount of time and time to perform temperature calibration with high accuracy.

  Further, although the spread of sensors is remarkable at present, the progress of the temperature calibration technique is slow, so that it has not been handled as easily and in large quantities as a general semiconductor element. For this reason, it is most effective to eliminate the temperature calibration process itself in the manufacturing process. Moreover, if it is going to maintain a high precision, it is calculated | required to implement temperature calibration simply at any time, but it is substantially difficult for a user to implement temperature calibration after shipment. In the same way as a general semiconductor element driven only by an electric signal, it is desired to provide an electric element capable of performing temperature calibration by the element itself anytime and anywhere with an electric signal.

  The present invention has been made in view of the above problems, and an object thereof is to provide an electrical element, an integrated element, and an electronic circuit that do not require a complicated process for temperature calibration and can reduce costs. That is.

In order to achieve the above object, according to a first aspect of the present invention, there is provided a temperature-dependent electrical element having a known phase transition temperature and having a light-transmitting phase change material, and a temperature change. Detecting a change in the optical characteristics of the phase change material, and detecting a phase transition of the phase change material due to the detected change in the optical properties of the phase change material, and detecting by the detection unit A temperature calibration unit that performs temperature calibration using the phase transition temperature as a temperature when the phase transition occurs and a heat generation unit that heats the phase change material are integrally provided on the substrate. It is an electrical element.
According to a second aspect of the present invention, in the electrical element according to the first aspect, the detection unit receives a light emitting unit that irradiates the phase change material with light, and receives light that has passed through the phase change material to generate an electrical signal. And a light receiving unit that converts and outputs the phase change substance to the phase change material based on an electrical signal from the light receiving unit.
Further, according to a third aspect of the present invention, there is provided a temperature-dependent electric element having a known phase transition temperature and having a light-reflective phase change material, and the phase change material according to the temperature change. A detection unit that detects a change in optical characteristics and detects that a phase transition of the phase change material has occurred due to a change in the optical characteristics of the detected phase change material, and a phase transition detected by the detection unit has occurred. An electric element characterized in that a temperature calibration unit that performs temperature calibration using the temperature of the phase change as the known phase transition temperature and a heat generation unit that heats the phase change material are integrated on the substrate. .
According to a fourth aspect of the present invention, in the electrical element according to the third aspect, the detection unit receives a light emitting unit that irradiates light to the phase change material, and light reflected by the phase change material to receive an electrical signal. And a light receiving unit that converts and outputs the phase change substance to the phase change material based on an electrical signal from the light receiving unit.
According to a fifth aspect of the present invention, in the electric device according to the second or fourth aspect, an optical waveguide for guiding the light irradiated from the light emitting portion to the phase change material is provided.
Further, the invention of claim 6 is characterized in that in the electrical element of claim 2, an optical waveguide is provided for guiding the light that has passed through the phase change material to the light receiving portion.
According to a seventh aspect of the present invention, in the electric element according to the fourth aspect, an optical waveguide is provided for guiding the light reflected by the phase change material to the light receiving portion.
Furthermore, the invention of claim 8 is characterized in that, in the electrical element according to any one of claims 1 to 7, a cavity is provided in the substrate in at least the region where the phase change portion is provided. .
According to a ninth aspect of the present invention, in the electrical element according to the eighth aspect, the optical path for guiding the light irradiated from the light emitting section and reflected by the phase change material to the light receiving section is an optical path reflected by the wall surface of the cavity. It is characterized by being.
Furthermore, the invention of claim 10 is the electrical element according to any one of claims 1 to 9, wherein the phase change material is a material defined in International Temperature Scale ITS-90. Is.
An eleventh aspect of the present invention is the electrical element according to any one of the first to tenth aspects, wherein at least the phase change portion is laminated on the substrate.
Furthermore, the invention of claim 12 is the electrical element according to any one of claims 1 to 10, characterized in that at least the phase change portion is arranged in parallel on the substrate.
The invention according to claim 13 is the electric element according to any one of claims 1 to 12, characterized in that the phase change material is dispersedly arranged at locations separated from the heat generating portion. .
Furthermore, the invention according to claim 14 is the electrical element according to claim 13, wherein the heat generating portions are arranged in a meandering manner, and the phase change portions are provided in parallel along the meandering heat generating portions. It is.
The invention according to claim 15 is the electrical element according to claim 13, wherein the heat generating portions are arranged in a meandering manner, and the phase change portions are provided in a stack along the meandering heat generating portions. It is.
Further, the invention of claim 16 is characterized in that, in the electric element of claim 13, the heat generating portion and the phase change portion are arranged so as to be concentric.
The invention according to claim 17 is the electrical element according to any one of claims 1 to 16, wherein an electrical insulating material is provided between the heat generating portion and the phase change portion. .
Furthermore, the invention according to claim 18 is the electrical element according to any one of claims 1 to 17, characterized in that a temperature detection range by the heat generating part is within a temperature range near the phase transition temperature. It is.
According to a nineteenth aspect of the present invention, in the electric device according to any one of the first to eighteenth aspects, a plurality of the phase change materials that are melted and become an alloy are provided, and each phase change material is increased by a temperature rise. It melts to become an alloy of a phase change material, and detects a phase transition of the phase change material of the alloy by detecting a change in optical properties of the phase change material of the alloy.
Furthermore, the invention according to claim 20 is the electrical element according to any one of claims 1 to 4, wherein the phase change part includes a plurality of the phase change substances having different known phase transition temperatures, A change in each optical property of each phase change material is detected to detect a phase transition of each phase change material.
The invention according to claim 21 is the electrical element according to any one of claims 1 to 20, wherein a surface protective film is formed to cover at least the periphery of the phase change portion with an insulating material. It is.
Furthermore, the invention of claim 22 is characterized in that a plurality of electrical elements according to any one of claims 1 to 21 are integrated.
A twenty-third aspect of the invention is an integrated circuit in which the electric element according to any one of the first to twenty-second aspects and a circuit element are integrated.
Furthermore, an invention according to claim 24 is an electronic circuit characterized in that the electric element according to any one of claims 1 to 22 is integrated together with a temperature-dependent semiconductor or electronic component.

In the present invention, the phase change unit, the detection unit, the temperature calibration unit, and the heat generation unit are integrally provided on the substrate. Then, by detecting a change in the optical properties of the phase change material accompanying a change in temperature by the detection unit, and detecting that a phase transition of the phase change material has occurred due to a change in the optical properties of the detected phase change material, Temperature calibration is performed with the temperature when the phase transition detected by the phase transition detection unit occurs as a known phase transition temperature. In this way, temperature calibration is performed by the element itself with the temperature when the phase transition of the phase change material provided integrally on the substrate occurs as a known phase transition temperature. Thereby, it becomes unnecessary to perform the conventional temperature calibration process which performs an electrical element in a thermostat environment tank, and can suppress cost.

  As mentioned above, according to this invention, the complicated process for temperature calibration is not required but cost can be held down.

It is a characteristic view which shows the temperature change and electrical resistance value change in time transition in one phase change substance. It is a characteristic view which shows the temperature change and resistance value change of the heat generating part with respect to the electric current supplied to a heat generating part in one phase change substance. It is a characteristic view which shows the temperature change with respect to time transition in two phase change substances of a different phase transition temperature. It is a characteristic view which shows the drive current value change of the heat generating part with respect to time transition in two phase change substances of different phase transition temperatures. It is a characteristic view which shows the output voltage value change between the detection lead wires with respect to time transition in the two phase change materials having different phase transition temperatures. It is a characteristic view which shows the resistance value change calculated from the applied voltage and the output voltage in two phase change substances of different phase transition temperatures. It is a characteristic view which shows resistance value-temperature characteristic in two phase change substances of a different phase transition temperature. It is a figure which shows the parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows the laminated structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a top view which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another laminated structure of the electric element of embodiment. It is a figure which shows another laminated structure of the electric element of embodiment. It is a figure which shows another parallel structure of the electric element of embodiment. It is a figure which shows another laminated structure of the electric element of embodiment. It is a figure which shows another laminated structure of the electric element of embodiment. It is a schematic plan view which shows the structure of the integrated element containing the electric element of embodiment.

First, the principle of calibration using the phase transition of phase change materials will be outlined. Here, an example in which the factor for detecting the phase transition of the phase change material is a change in electrical resistance value will be described.
FIG. 1 is a characteristic diagram showing temperature changes and electrical resistance value changes over time. In this example, a known melting point of one phase change material is used for calibration. In this example, as shown in FIG. 1, a temperature at which the phase change material undergoes phase transition by supplying a current having a constant current value ( When the melting point (freezing point): Mp), an endothermic reaction occurs. If the phase change material is an individual, it begins to become liquid at the phase transition temperature as the temperature rises, maintains the phase transition temperature during the period when everything is liquid, and rises again after everything becomes liquid . Therefore, a discontinuous tendency appears in the electric resistance value of the heat generating portion. The temperature at the electric resistance value R2 of the heat generating portion can be determined as the phase transition temperature. In other words, this electric resistance value R2 corresponds to the phase transition temperature. The relationship between the phase transition temperature and the electric resistance value is a one-to-one relationship, and calibration can be performed by using this relationship.

  In addition, the time of the phase change can be detected more accurately by reducing the heat capacity of the heat generating portion and forming the phase change material in a thin and uniform temperature region. Specifically, as shown in FIG. 1, when the phase change material undergoes a phase transition from a solid to a liquid, the phase change material exhibits an endothermic reaction, and the temperature does not change from the start to the end of the phase change. The increasing tendency of the electrical resistance value of the part is detected as a phenomenon that changes to a parallel state of the resistance value. The transition of the electrical resistance value from time T0 to time T1 is stored as data and is calculated as a function of the resistance value and time. This function is compared with data obtained after time T1, and if data that does not fit the function is generated at time T2, a phase transition occurs, and at this time, it is determined that the phase transition temperature Mp is known. In particular, in the case of a structure of a phase change material having a small heat capacity and a heat generating portion in which a cavity is formed in the substrate, it can be obtained as a rapid and remarkable characteristic at a time of T2 = 0.1 to 10 [msec]. For example, in the heat generating portion and the meandering arrangement structure of the phase change material shown in FIG. 14 to be described later, the dimensions of the heat generating portion and the location where the phase change material is formed are 2 [μm], 100 [μm] square, and the phase change material. If Sn is a phase transition temperature of 231.928 ° C., a temperature standard can be obtained in 1 [msec], and the speed can be further increased by further reducing the size. In this way, as shown in FIG. 1, the electrical resistance value R2 of the heat generating part is a known temperature Mp, and by using the known resistance temperature coefficient TCR of the heat generating part, Joule heat is not generated in the heat generating part. By supplying a weak current, the electric resistance value of the heat generating part can be used as detection of the environmental temperature of the element. If the structure obtains a plurality of different phase transition temperatures described later, the unknown resistance temperature coefficient TCR can be derived without using the known resistance temperature coefficient TCR of the heat generating portion. In the embodiment, the phase change material may be a material that undergoes a phase transition at a certain temperature. In particular, if a substance showing a temperature determined as an international temperature scale in which the temperature is determined with high precision is used, calibration can be performed with high precision, and examples of such substances include In and Sn.

  FIG. 2 is a characteristic diagram showing the temperature change and resistance value change of the heat generating part with respect to the current supplied to the heat generating part. As shown in FIG. 2, since the phase change material undergoes a phase transition from a solid or liquid to a gas at a known temperature (sublimation point or boiling point: Bp), the phase change material evaporates and the heat capacity of the heat generating part becomes Decrease by minute. The decrease in the heat capacity of the heat generating part increased the current value in the transition of the amount of electric power (electric resistance value) supplied to the heat generating part which increased the temperature (electric resistance value) of the heat generating part at a constant rate, and reached the boiling point Bp. Sometimes the phase change material undergoes a phase transition. The heat capacity changes and the electric resistance value appears as a discontinuous characteristic, and this discontinuity point is a known boiling point Bp. As in FIG. 1, a weak current can be supplied to the heat generating portion so as not to generate Joule heat, and the electric resistance value of the heat generating portion can be used as detection of the environmental temperature of the element.

  Next, the principle of calibration using each known phase transition temperature of a plurality of phase change materials will be outlined. In the following, an example using two phase change substances will be outlined.

  FIG. 3 is a characteristic diagram showing temperature changes with time in two phase change materials having different phase transition temperatures. As shown in the figure, by increasing the current supply to the heat generating part at a certain rate, the temperature at which the phase change material A undergoes phase transition at the time T2 (the melting point that is a known value unique to the phase change material A). (Freezing point): Mpa). Furthermore, when the current is continuously supplied and the temperature is raised, the temperature at which the phase change material B undergoes phase transition at time T4 (the melting point (freezing point): Mpb (> Mpa), which is a known value unique to the phase change material B)). . Note that these elements do not use a heat generating part to cause phase transition of the phase change material, and detect the phase transition of the phase change material shown in FIG. 3 by controlling the ambient temperature of the element as in the past. However, since it can be determined that the temperature is a known temperature, the phase of each element can also be determined by a method using a temperature control device having a spatial temperature distribution and a low temperature control accuracy instead of a temperature standard device having a higher accuracy than a conventional calibration device. It can detect the phase transition of the changing substance and calibrate with high accuracy. Then, by applying a sufficiently small current value so as not to cause Joule heat generation of the heat generating part having a predetermined resistance temperature coefficient, and detecting the resistance value of the heat generating part, the heat generating part of each element is used as a temperature detector. Can be calibrated.

  It is sufficient that at least Mpa ≠ Mpb. In addition, as shown in FIG. 4, which is a characteristic diagram showing a change in driving current value of the heat generating portion with respect to time transition in two phase change materials having different phase transition temperatures, an output voltage value is measured and converted into a resistance value, The current value is increased from time T0 to time T4 during a period in which the inflection point (mostly ΔR = 0) appears twice. With respect to the time differential value ΔR of the resistance value, ΔR from time T0 to time T1 is stored and compared with ΔR after time T2. Until the phase transition from the solid to the liquid is completed, even if the applied power is increased by the endothermic reaction, the temperature does not increase and ΔR = 0. Therefore, at the time T2, the predetermined phase change substance A becomes the known phase transition temperature Mpa. Can be judged. Similarly, it can be determined that the predetermined phase change material B has reached a known phase transition temperature Mpb at time T4. As a result, as shown in FIG. 5, the supply current value and the output voltage value Va at time T2 of the heat generating portion (shared with the heater and the temperature detecting portion), that is, the value when the resistance value Ra shown in FIG. 6 is the temperature Mpa. It is. In addition, it can be seen that the supply current value and the output voltage value Vb (see FIG. 5) at time T4, that is, the resistance value Rb (see FIG. 6) are the values at the temperature Mpb. Is approximated as a function of temperature and resistance. Further, as shown in FIG. 5, at time T5 and time T6, by supplying a small constant current Is so as not to cause self-heating as with the resistance temperature detector, resistance value V5 / Is is obtained as shown in FIG. And the resistance value V6 / Is are detected and calculated as the temperature C5 and the temperature C6 using the function of the previous temperature and resistance value. The ambient temperature shown by the broken line in FIG. 6 can be measured.

As described above, since the two different phase change materials are materials having different phase transition temperatures, calibration can be performed when the temperature of the heat generating portion reaches two different temperatures. Thereby, a highly accurate temperature scale can be provided. In addition, since the temperature dependency (temperature calibration of the resistance value) of the heat generating part is obtained, a resistor material having an unknown resistance temperature coefficient (TCR) can be used, and the material of the heat generating part has a known resistance temperature coefficient in advance. When a resistor material of (TCR) is used, the resistance value-temperature characteristic of FIG. 7 becomes more accurate. For example, if Pt is used for the heat generating part,
The temperature dependence of the resistance value R (Ω) and the temperature S (° C.) of the heat generating part can be expressed by the following formula (1).
R = R0 × (1 + α · S) (Formula 1)

  The temperature coefficient (TCR) α is 3.9083E-03 (0 ° C. to 850 ° C.). Phase change material A is, for example, In, and Mpa = 156.5985 ° C., and phase change material B is, for example, If the temperature coefficient α is corrected by the Rb of Sn with Mpb = 231.928 ° C., the accuracy is higher, and the linearity is obtained from 0 ° C. to 850 ° C. Therefore, the accuracy is ensured even in a temperature region other than the range from Mpa to Mpb. . Incidentally, the drawing shows two types of phase change materials having different phase transition temperatures. However, when the temperature dependence is nonlinear, more different known phase transition temperatures are required, and the phase change on the drawing is necessary. The number of substances should be increased. In addition, although the example in which the factor for detecting that the phase change material has undergone the phase transition is the electrical resistance value change has been described, the volume, stress, mass, heat capacity, There are a natural frequency, a dielectric constant, a viscosity, a light transmittance, a light reflectance, a light absorption rate, and the like.

Next, the structure of the electrical element of the embodiment will be described. An example in which a change in optical characteristics of the phase change material is detected using one phase change material will be described.
Since the metal thin film is heated and oxidized by oxygen in the air to change its color, it can be detected as a change in reflectance. Normally, oxidation proceeds gradually, but the heater reaches a predetermined temperature rapidly, so that the oxidation temperature is accurately determined as a reaction in a narrow temperature range. The vanadium oxide thermochromic light-modulating material, whose optical properties such as transmission, reflection, and absorption properties can be reversibly changed depending on the temperature, can be adjusted to near room temperature if necessary by adjusting the light-modulating temperature by adding elements, etc. Can be set precisely. MBBA (Methoxy benziliden p-butyl aniline), which is a thermotropic liquid crystal and has a phase transition temperature of 40 ° C. to 50 ° C., has different optical characteristics between the liquid crystal phase and the liquid phase. These can be detected by arranging an optical waveguide and an optical detector. By detecting changes in these optical properties, a known temperature can be used for the temperature standard. In the following, the outline of light transmission, which is one of the optical characteristics of a phase change material, will be described as an example. A phase change material exhibits a phase transition between an optically transparent amorphous and an optically opaque crystal. A substance to be performed, which supplies power to the light emitting part to emit light, and guides light to a phase change substance arranged close to the heat generating part through an optical waveguide. Then, in accordance with the transparency of the phase change material, the light amount from the light emitting portion is detected by the light receiving portion through the optical waveguide from the phase change material, and is taken out as an electric signal by the detection lead of the light receiving portion.

FIG. 8 is a diagram illustrating a parallel structure of the electric elements according to the embodiment. (A) of the same figure is a top view, (b) of the same figure is the sectional view on the AA 'line of (a) of the same figure. In the electric element shown in FIG. 8, the heat generating portion 13 is laminated on the substrate 11 as shown in FIG. Further, the phase change material 14 is disposed in parallel between the two optical waveguides 15 so as to be separated from the heat generating portion 13 to which the lead 12 is connected. In addition, one optical waveguide 15 has a light emitting portion 16 that emits light into the one optical waveguide 15, and the other optical waveguide 15 has one optical waveguide 15, a phase change material 14, and the other optical waveguide 15. A light receiving portion 17 for receiving the light passing therethrough is disposed. A lead 18 for supplying a current to the light emitting unit 15 is connected to the light emitting unit 15. The light receiving unit 16 is connected to a detection lead 19 that detects an electrical signal obtained by converting the amount of light received by the light receiving unit 16. Then, the state in which the crystallinity changes at the phase transition temperature of the phase change material 14 due to the heating of the heat generating portion 13, the light radiated from the light emitting portion 16 as light transmittance of the phase change material 14 passes through one optical waveguide 15. The light that has been introduced into the phase change material 14 and passed through the other optical waveguide 15 is detected by the light receiving unit 17. Therefore, it can be detected that the phase change temperature of the phase change material 14 has been reached by outputting the amount of light that has passed through the optical waveguide based on the principle described above. Note that, as described above, in this example, the phase transition is detected by the change in permeability of the phase change material. However, incident light is also incident to the phase transition of the phase change material 14 for other optical characteristics. A configuration in which a change from a transmitted or absorbed state to a reflected state is detected is also possible. The optical waveguide 15 is made of a transparent material such as SiO ₂ , and each lead is made of Al or Au, or the same metal as Pt, NiCr, Si, or a conductive material such as the heat generating portion 13.

  FIG. 9 is a diagram showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 8 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line A-A ′ in FIG. 9 differs from that of FIG. 8 in that a cavity 21 is provided by etching on the substrate 11 using the electrical insulating layer 20 as a mask except for the region where the heat generating portion 13 and the phase change material 14 are disposed. With such a structure, the heat generating part 13 can be improved in heat insulation by the space of the substrate 11 and the low heat capacity, and the heat capacity of the heat generating part 13 can be reduced. Since the laminated phase change material 13 is also close to the heat generating portion 13 and has a minute amount, the temperature is almost the same as that of the heat generating portion 13 and the temperature distribution is uniform. As a result, the phase change material 14 and the heat generating portion 13 can be quickly controlled, so that highly accurate calibration can be completed quickly. In these manufacturing methods, an electrically insulating layer 20 is laminated on the substrate 11 if it is a substrate made of a conductive substance, and then a conductive electric resistance substance is laminated in a thin film by vapor deposition or sputtering, and leads 12 and detection leads. 19 and the heat generating portion 13 are patterned by a semiconductor fine processing photo-etching technique. Then, if the phase change material 14 is a conductive material, the phase change material 14 is laminated via the electrical insulating layer 20, and then the phase change material 14 is patterned into a region corresponding to the heat generating portion 13. In the structure in which the cavity 21 is provided on the substrate 11, a portion to be a substrate facing the periphery of the region of the heat generating portion 13 and the phase change material 14 is removed by etching. The cavity 21 reduces the influence of the substrate having a large heat capacity, and the structures of the heat generating portion 13 and the phase change material 14 having a small heat capacity can be obtained and adjusted to a predetermined temperature at high speed.

  FIG. 10 is a view showing a laminated structure of the electric element of the embodiment. In the figure, the same reference numerals as those in FIG. 9 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line A-A ′ in FIG. Unlike the parallel-structured electrical element shown in FIG. 9, the stacked-structure electrical element shown in FIG. 9 has a phase change material 14 stacked on the optical waveguide 15. According to the electric element having such a laminated structure, the crystallinity changes at the phase transition temperature of the phase change material 14 due to the heating of the heat generating portion 13. On the other hand, when the light irradiated from the light emitting unit 16 passes through the one optical waveguide 15 and the light passing through the other optical waveguide 15 is detected by the light receiving unit 17, the light oozes out from the optical waveguide 15. The leaked light is reflected and refracted by the phase change material 14 in contact with the optical waveguide 15. Then, since the crystallinity of the phase change material 14 that has reached the phase change changes, the reflectance and refractive index at the boundary between the optical waveguide 15 and the phase change material 14 change. As a result, the amount of light received by the light receiving unit 17 changes. Therefore, it can be detected that the phase change temperature of the phase change material 14 has been reached by outputting the amount of light that has passed through the optical waveguide based on the principle described above.

  FIG. 11 is a diagram showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 10 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line A-A ′ in FIG. In the electric element having the laminated structure shown in the figure, the phase change material 14 is arranged in parallel adjacent to the optical waveguide 15, unlike the electric element having the laminated structure shown in FIG. 10. According to the electric element having such a parallel structure, the crystallinity changes at the phase transition temperature of the phase change material 14 due to the heating of the heat generating portion 13. On the other hand, when the light irradiated from the light emitting unit 16 passes through the one optical waveguide 15 and the light passing through the other optical waveguide 15 is detected by the light receiving unit 17, the light oozes out from the optical waveguide 15. The leaked light is reflected and refracted by the phase change material 14 in contact with the optical waveguide 15. Then, since the crystallinity of the phase change material 14 that has reached the phase change changes, the reflectance and refractive index at the boundary between the optical waveguide 15 and the phase change material 14 change. As a result, the amount of light received by the light receiving unit 17 changes. Therefore, it is detected that the phase transition temperature of the phase change material 14 has been reached by outputting the amount of light that has passed through the optical waveguide based on the principle described above.

FIG. 12 is a diagram showing another parallel structure of the electric elements of the embodiment. (A) of the same figure is a top view, (b) of the same figure is the sectional view on the AA 'line of (a) of the same figure. In the figure, the same reference numerals as those in FIG. 11 denote the same components. In the structure in which the phase change material is exposed on the surface, in the case of a phase change material that easily oxidizes, such as a metal material, the phase change temperature is changed to a metal oxide depending on the ambient atmosphere. In addition, when the phase change material is liquefied, the temperature distribution changes due to flow deformation, and therefore, reproducibility cannot be obtained if calibration is repeated. Therefore, in the electrical element of FIG. 12, in order to prevent the phase change material 14 from being chemically changed by the ambient atmosphere, the optical waveguide 15 is passivated with the electrical insulating layer 22 so as not to contact the ambient atmosphere together with the phase change material 14. . For the electrical insulating layer 22, a heat-resistant electrical insulating material such as SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ is suitable. When the light irradiated from the light emitting unit 16 is detected by the light receiving unit 17 through the one optical waveguide 15 through the other optical waveguide 15, the light oozes out from the optical waveguide 15. The leaked light is reflected and refracted by the phase change material 14 in contact with the optical waveguide 15. Even if the phase change material is an opaque metal material, the optical waveguide 15 and the phase change material 14 in the phase change between a solid having a low reflectance and a liquid having a smooth surface having a high reflectance. The reflectivity and refractive index at the boundary portion of this change. And when calibrating with high precision using the definition fixed point of the international temperature scale which is a metal material, it is necessary to detect the freezing point (melting point) of a substance under standard atmospheric pressure (10.32525 Pa). In this case, the inside of the heat-resistant electrical insulation layer is maintained at a constant pressure by the rigid structure covered with the heat-resistant electrical insulation layer, so the accuracy is not affected even if the atmospheric pressure changes. Becomes higher.

  FIG. 13 is a plan view showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 12 denote the same components. The electric element shown in the figure is formed by integrating a plurality of units in which a heat generating portion 13, a phase change material 14, an optical waveguide 15 and the like are arranged in parallel on the same substrate 11. According to such a configuration, when the accuracy guarantee period by calibration in one unit is completed, the other unit is calibrated and the accuracy guarantee period can be realized over a long period of time.

  FIG. 14 is a diagram showing another parallel structure of the electric elements of the embodiment. (A) of the same figure is a top view, (b) of the same figure is a BB 'sectional view taken on the line of (a) of the same figure. In the figure, the same reference numerals as those in FIG. 12 denote the same components. Further, the notation of the electrical insulating layer 20 is omitted in FIG. The electric element shown in FIG. 2 meanders a heat generating portion 13 in which leads 12 are connected to an electrically insulating layer 12 provided with a partially open region through which the cavity 17 and the surrounding atmosphere are vented in the region of the cavity 17 of the substrate 11. Further, the phase change material 14 is laminated on the optical waveguide 15 while being spaced apart from the heat generating portion 13. A light emitting unit 16 is disposed at one end of each phase change material 14 provided on the phase change material 14 and a light receiving unit 17 is disposed at the other end. Each detection lead 18 is electrically insulated. Therefore, at a known phase transition temperature, the heat generating part 13 having a meandering arrangement and the phase change material 14 having a meandering arrangement in parallel with the heat generating part 13 are locally concentrated at a high density to make the temperature distribution uniform. Efficient and highly accurate calibration. The electric element shown in FIG. 14 has a structure in which the phase change material 14 is arranged in parallel with the heat generating portion 13, but may have a structure in which the phase change material 14 is laminated on the heat generating portion 13.

  FIG. 15 is a diagram illustrating another parallel structure of the electric elements of the embodiment. (A) of the figure is a plan view, (b) of the figure is a cross-sectional view taken along the line AA 'of (a) of the figure, and (c) of the figure is BB' of (a) of the figure. It is line sectional drawing. In the figure, the same reference numerals as those in FIG. 14 denote the same components. Also, the notation of the electrical insulating layer 22 is omitted in FIG. In the electric element shown in the figure, a heat generating portion 13 having a circular electric insulating layer 12 concentrically arranged in a region of a cavity 21 of a substrate 11 provided with a partial opening region through which the cavity 21 and the surrounding atmosphere are ventilated is arranged circumferentially. Further, the optical waveguide 15 is separated from the inside of the heat generating portion 13, the phase change material 14 is laminated on the optical waveguide 15, and the uppermost layer is covered with the electrical insulating layer 22. Each lead 18 and detection lead 19 are electrically insulated from each other. The heat generating part 13 having such a concentric arrangement and the phase change material 14 having a concentric arrangement in parallel with the heat generating part 13 are concentrated and arranged locally at a high density, and the temperature distribution is made uniform, efficiently and accurately. Can be calibrated. The electric element shown in FIG. 15 has a structure in which the phase change material 14 is arranged in parallel with being separated from the heat generating portion 13, but the structure in which the phase change material 14 is laminated on the heat generating portion 13 via an electric insulating layer. But you can.

Next, an outline of the structure of the electric element according to the embodiment that uses two phase change materials to detect a change in optical characteristics of the phase change materials will be described.
FIG. 16 is a diagram showing another parallel structure of the electric elements of the embodiment. (A) of the same figure is a top view, (b) of the same figure is the sectional view on the AA 'line of (a) of the same figure. In the figure, the same reference numerals as those in FIG. 8 denote the same components. In the electric element shown in FIG. 16, a phase change material 31 and a phase change material 32 are arranged in parallel in a heat generating portion that also serves as a temperature detection unit. The phase change materials 31 and 32 are heated in a heat generating portion, and the phase change material 31 and the phase change material 32 undergo a phase transition between an optically transparent amorphous and an optically opaque crystal at different known temperatures. It is a substance. This is a mechanism for detecting the phase transition by the light receiving portions 17-1 and 17-2 as optical detection means and detecting the temperature by the heat generating portion 13. The phase change materials 31 and 32 are materials that perform a phase transition between an optically transparent amorphous crystal and an optically opaque crystal at a known temperature by the heat generating portions 13 adjacent in parallel. In detecting the phase transition, the light entering / exiting the phase change materials 31 and 32 through the optical waveguides 15-1 and 15-2, respectively, and the light emitting units 16-1 and 16-2, and the light receiving unit 17- Photodiodes are formed as 1 and 17-2. Va is applied to the light emitting units 16-1 and 16-2, respectively, and light is guided from the light emitting units 16-1 and 16-2 to the phase change materials 31 and 32, respectively. Then, according to the transparency of the phase change material, the phase transition is determined by outputting the light amounts from the light emitting units 16-1 and 16-2 by the light receiving units 17-1 and 17-2. A current of Ih is applied to the heat generating part 13 to cause the heat generating part 13 to generate heat and cause the phase change materials 31 and 32 to undergo a phase transition at a known temperature. The current Ih and voltage Vh of the heat generating part 13 at the time of phase transition are measured, the resistance value is calculated, and the heat generating part resistance value is calibrated to the temperature to use the heat generating part as the temperature detecting part. This is a mechanism for detecting the light transmission state where incident light is introduced from one side and emitted from the other side when the crystallinity changes at the phase transition temperature of the phase change material, but the incident light is transmitted or absorbed along with the phase transition. It is also possible to have a mechanism for detecting a change from a reflected state to a reflected state. Optical waveguides 15-1 and 15-2 is a transparent material such as SiO _2, each lead consists Al, Au, or the heating portion and the same Pt, the metal or conductive material such as NiCr or Si,.

  Specifically, as shown in FIG. 16, the heat generating portion 13 is laminated on the substrate 11. Further, the phase change material 31 is disposed in parallel between the two optical waveguides 15-1 so as to be separated from the heat generating portion 13 to which the lead 12 is connected. One optical waveguide 15-1 has a light emitting portion 16-1 that emits light into the one optical waveguide 15-1, and the other optical waveguide 15-1 has one optical waveguide 15-1, a phase. A light receiving unit 17-1 for receiving light passing through the changing substance 16-1 and the other optical waveguide 15-1 is disposed. A lead 18-1 for supplying current to the light emitting unit 15-1 is connected to the light emitting unit 15-1. The light receiving unit 16-1 is connected to a detection lead 19-1 that detects an electrical signal obtained by converting the amount of light received by the light receiving unit 16-1. Further, the phase change material 32 is disposed in parallel between the two optical waveguides 15-2 so as to be separated from the heat generating portion 13. One optical waveguide 15-2 has a light emitting portion 16-2 that irradiates light into the one optical waveguide 15-2, and the other optical waveguide 15-2 has one optical waveguide 15-2 and a phase. A light receiving unit 17-2 that receives light passing through the changing substance 16-2 and the other optical waveguide 15-2 is disposed. A lead 18-2 for supplying a current to the light emitting unit 15-2 is connected to the light emitting unit 15-2. The light receiving unit 16-2 is connected to a detection lead 19-2 that detects an electrical signal obtained by converting the amount of light received by the light receiving unit 16-2.

According to the electric element of FIG. 16, the heat generating portion 13 and the phase change materials 31 and 32 are in close proximity, heat transfer is uniform, heat capacity is small, calibration is completed quickly, and highly accurate temperature detection is possible. . If the phase change materials 31 and 32 are conductive materials, they are stacked via an electrical insulating layer, and then the phase change materials 31 and 32 are patterned into a region corresponding to the heat generating portion 13. Further, if the substrate 11 is Si, it is easy to integrate peripheral circuits. For example, when a Si substrate having a bulk silicon structure is used, SiO ₂ is formed on the surface by thermally oxidizing the Si substrate so that the material of the heat generating portion and the phase change material are not conducted through the Si substrate. A single-layer or multiple-layer electrical insulating layer such as SiO ₂ , Si ₃ N ₄ , or Al ₂ O ₃ is formed on the substrate by CVD or sputtering. Next, the material of the heat generating part such as Si, Pt, NiCr, etc. is laminated on the electrical insulating layer by CVD or sputtering, and a pattern is formed by photoetching and arranged as the heat generating part 13. Further, the phase change materials 31 and 32 are formed by CVD, sputtering, and various thin film manufacturing methods, and patterned by photolithography. By using Si formed on the Si substrate, the electrical insulation layer, or the electrical insulation layer for the CMOS element structure, peripheral circuits can be formed and integrated in the same chip. In the case of using a Si substrate having an SOI (Si On Insulator) structure, the BOX layer is used as an electrical insulating layer, and the SOI layer is patterned by photoetching and arranged as a heat generating portion. Next, after coating the surface with an electrically insulating layer, a phase change material is formed on the electrically insulating layer by various thin film manufacturing methods such as CVD, sputtering, and sol-gel method, and a pattern is formed by photolithography. Further, by using a substrate, a BOX layer, or an SOI layer as a CMOS element structure, peripheral circuits can be formed and integrated in the same chip.

  FIG. 17 is a diagram showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 16 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line A-A ′ in FIG. 17 is different from FIG. 16 in that a cavity 21 is provided by etching on the substrate 11 using the electrical insulating layer 20 as a mask except for the region where the heat generating portion 13 and the phase change materials 31 and 32 are disposed. is there. With such a structure, the heat generating part 13 can be improved in heat insulation by the space of the substrate 11 and the low heat capacity, and the heat capacity of the heat generating part 13 can be reduced. Since the laminated phase change materials 31 and 32 are also close to the heat generating portion 13 and have a minute amount, they have substantially the same temperature as the heat generating portion 13 and the temperature distribution is uniform. As a result, the phase change materials 31 and 32 and the heat generating portion 13 can be quickly controlled in temperature, so that highly accurate calibration can be completed quickly.

  FIG. 18 is a diagram showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 17 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line A-A ′ in FIG. 18 differs from FIG. 17 in that phase change substances 31 and 32 are arranged in parallel between the light emitting units 16-1 and 16-2 and the light receiving units 17-1 and 17-2 without using an optical waveguide. ing. As a result, light can enter and exit directly from the phase change material without going through the optical waveguide, and the accuracy is further improved.

  FIG. 19 is a diagram showing another laminated structure of the electric element of the embodiment. (A) of the same figure is a top view, (b) of the same figure is the sectional view on the AA 'line of (a) of the same figure. Moreover, (c) of the same figure is a top view, (d) of the figure is a BB 'sectional view taken on the line (c) of the same figure. When the phase change materials that undergo phase transition at a known phase transition temperature are in contact with each other, they diffuse to each other and change to a new alloy or compound, thereby changing the phase transition temperature. Therefore, it is necessary to form a plurality of phase change materials having different phase transition temperatures by separating them from each other. However, if it is known that an alloy composed of each phase change material has a known phase transition temperature, the phase change materials may be brought into contact with each other to form a new alloy or compound. For example, In is selected for one phase change material, Sn is selected for the other phase change material B, an In-Sn alloy is formed, and the melting point (solidification point) is a binary alloy phase diagram depending on the mixing ratio of In and Sn. Is obtained by referring to. Therefore, an alloy may be prepared from the beginning, and the alloy may be accumulated as a single phase change material as described above. However, as shown in FIGS. The phase change material 32 may be laminated thereon. That is, for example, as a structure of an electric element that forms an arbitrary mixing ratio of In and Sn, the heat generating portion 13 is stacked on the substrate 11, and the phase change material 31 and the phase change material 32 are stacked on the heat generating portion 13. doing. In addition, you may passivate the whole with an electrically insulating layer as an uppermost layer. When temperature calibration is performed, or in advance, a layer in which the phase change material 31 and the phase change material 32 are stacked by the heating unit 13 is heated to a higher melting point of the two phase change materials to change each phase. The substance is dissolved to generate a phase change substance 33 which is an alloy of the phase change substance 31 and the phase change substance 32 as shown in FIGS. 19 (c) and 19 (d). Since the mixing ratio of the two phase change materials is determined by the ratio of the laminated thickness, the phase transition temperature can be set with reference to the binary alloy phase diagram. Thereby, even if it is two types of phase change substances of a different phase transition temperature, many more phase transition temperatures can be obtained.

  FIG. 20 is a diagram illustrating another laminated structure of the electric element according to the embodiment. (A) of the same figure is a top view, (b) of the same figure is the sectional view on the AA 'line of (a) of the same figure. Moreover, (c) of the same figure is a top view, (d) of the figure is a BB 'sectional view taken on the line (c) of the same figure. In the electric element shown in the figure, the phase change material 31 and the phase change material 32 are alternately placed adjacent to each other. Then, when temperature calibration is performed or in advance, the phase change material 31 and the phase change material 32 alternately arranged adjacent to each other by the heating unit 13 are heated to a higher melting point of the two melting points of the two phase change materials. Then, each phase change substance is dissolved to generate a phase change substance 33 that is an alloy of the phase change substance 31 and the phase change substance 32 as shown in FIGS. Since the mixing ratio of the two phase change materials is determined by the ratio of the area where the phase change material 31 and the phase change material 32 are arranged, the phase transition temperature can be set with reference to the binary alloy phase diagram. Thereby, even if it is two types of phase change substances of a different phase transition temperature, many more phase transition temperatures can be obtained.

  FIG. 21 is a diagram showing another parallel structure of the electric elements of the embodiment. In the figure, the same reference numerals as those in FIG. 18 denote the same components. 4A is a plan view, and FIG. 4B is a cross-sectional view taken along the line B-B ′ in FIG. The electric element of FIG. 21 different from FIG. 18 has a parallel structure in which a light emitting portion 16 and a light receiving portion 17 where light enters and exits perpendicularly to the substrate surface are arranged. Moreover, the wall surface of the cavity 21 having a mirror-like plane is formed by anisotropic etching at a speed depending on the structure of the substrate using the pattern of the electrical insulating layer 20 on the substrate surface as a mask. In the case of a Si (100) plane single crystal substrate, an alkaline etchant such as KOH (potassium hydroxide) or TMAH (tetramethylammonium hydroxide) is used, and the substrate 11 has a (111) crystal plane with a predetermined angle of 54.7 degrees. A wall surface of the cavity 21 having a mirror-like plane is formed. In order to detect the phase change of the phase change material 14, in particular, the change in light reflectance, as shown in FIG. 21B, an optical path (shown by a dotted line in the figure) connecting the light emitting unit 16 and the light receiving unit 17. The light emitting part 16 and the light receiving part 17 are arranged on the electrical insulating layer 20 of the bridging part protruding from the wall surface of the cavity 21 of the (111) plane of 54.7 degrees of the substrate. Light vertically emitted from the back surface of the light emitting unit 16 shown in FIG. 21B is reflected from the wall surface of the cavity 21 and the bottom surface of the cavity 21 at 54.7 degrees, and reflected from the surface of the phase change material 14. The light is reflected again by the bottom surface of the cavity 21 and the wall surface of the cavity 21 and enters the light receiving unit 17. In this optical system, by designing the depth of the cavity, the location of the phase change material, the position and distance of the light emitting part and the light receiving part, and integrating them on the same substrate, light conduction loss is reduced. In addition, it is possible to accurately detect the change in reflectance accompanying the phase change of the phase change material, and to measure the temperature efficiently and with high sensitivity.

  FIG. 22 is a diagram showing another laminated structure of the electric element of the embodiment. In the figure, the same reference numerals as those in FIG. 21 denote the same components. (A) of the figure is a plan view, (b) of the figure is a plan view of the back surface, and (c) of the figure is a sectional view taken along the line B-B 'of (a) and (b) of the figure. The electric element of FIG. 22 different from FIG. 21 has a hollow portion penetrating from the back surface of the substrate. As shown in FIG. 3C, a wall surface having a predetermined angle is formed on the substrate in the through space 23. If the Si (100) plane single crystal substrate is anisotropically etched from the back surface of the substrate using the electrical insulating layer pattern on the back surface of the substrate as a mask, KOH (potassium hydroxide), TMAH (tetra Using an alkaline etchant such as methylammonium hydroxide), the wall surface of the through space 23 having a mirror-like plane of the (111) crystal plane at a predetermined angle of 54.7 degrees is formed on the substrate. As shown in FIG. 22 (c), in order to detect the phase change of the phase change material 14, in particular, the change in light reflectance, an optical path (shown by a dotted line in the figure) connecting the light emitting unit 16 and the light receiving unit 17 Thus, the light emitting part 16 and the light receiving part 17 are arranged on the electrical insulating layer 20 projecting from the cavity on the back surface of the substrate at a parallel position across the position of the phase change material 14 on the surface. Light emitted perpendicularly from the back surface of the light emitting unit 16 is reflected by the wall surface of the through space 23, reflected by the surface of the phase change material 14, reflected again by the wall surface of the through space 23, and incident on the light receiving unit 17. In this optical system, by designing the thickness of the substrate (depth of the cavity), the location of the phase change material, the position and distance of the light emitting portion and the light receiving portion, and integrating them on the same substrate, Light conduction loss is reduced, the change in reflectivity accompanying the phase change of the phase change material can be detected accurately, and the temperature can be measured efficiently and with high sensitivity.

  FIG. 23 is a diagram showing another laminated structure of the electric element of the embodiment. In the figure, the same reference numerals as those in FIG. 22 denote the same components. (A) of the figure is a plan view, (b) of the figure is a plan view of the back surface, and (c) of the figure is a sectional view taken along the line B-B 'of (a) and (b) of the figure. The plane of the cavity 21 in the electrical element of FIG. 23 different from FIG. 22 has a curved surface shape (semi-circular ring-shaped shape) that is cut out by a semi-doughnut shape that crosses around the position of the back surface facing the concentric circle. ing. Using the pattern of the electrical insulating layer on the backside of the substrate as a mask, hydrofluoric acid with an oxidizing agent added is used for an Si single crystal substrate by isotropic etching at an equal speed in any orientation independent of the substrate structure. By using it, the wall surface of the cavity 21 having a mirror-like curved surface is formed on the substrate. If this is the case, a part (core) of the substrate in the center of the donut shape is in contact with the surface and heat is transferred to increase the heat capacity. Therefore, etching is transmitted from the hole at the center position of the concentric circle on the surface by etching. A gap 24 is provided to reduce heat. As shown in FIG. 23A, the light emitting unit 16 is disposed at the substrate back surface position facing the center position of the concentric circles. As shown by the dotted line in FIG. 23C, the light emitted from the light emitting portion 16 arranged at the center of the donut shape is reflected by the wall surface of the inner cavity 21 of the donut shape, and the phase change material 14 The light is reflected by the surface, is reflected again by the wall surface of the outer cavity 21, and is incident on the light receiving unit 17 arranged concentrically along the wall surface of the outer cavity 21. In this optical system, by designing the thickness of the substrate (depth of the cavity), the location of the phase change material, the position and distance of the light emitting portion and the light receiving portion, and integrating them on the same substrate, Light conduction loss is reduced, the change in reflectivity accompanying the phase change of the phase change material can be detected accurately, and the temperature can be measured efficiently and with high sensitivity.

FIG. 24 is a schematic plan view showing a configuration of an integrated element including the electric element of the embodiment. The integrated element shown in the figure includes an electrical element 1 according to the embodiment, an electronic circuit 40 responsible for power supply and detection of the electrical element 1, and an input / output terminal for signal input and output for exchanging signals with a host device. A group 50 is included. That is, the integrated element of FIG. 1 is an element in which a temperature calibration function and temperature detection are integrated, and includes the electric element 1, the electronic circuit 40, and the input / output terminal group 50. The electronic circuit 40 includes an interface, a control circuit, a register, ΔΣ A / D, a transmission circuit, and the like. Further, the input / output terminal group 50 includes terminals for address, GND, clock input, data input / output, address input, and power supply. A pair of power supply leads made of a conductive material such as Si, Pt, NiCr, SiC, and C and a heat generating portion at the tip of the lead are arranged on a substrate made of glass or ceramic of a terminal electrical insulating material. Then, the phase change materials having different phase transition temperatures are stacked on the heat generating portion while being separated from each other. If two phase change material conductive materials are stacked via an electrical insulating layer, each phase change material is patterned into a region corresponding to the heat generating portion. Further, if the substrate is Si, it is easy to integrate peripheral circuits. For example, when a Si substrate having a bulk silicon structure is used, SiO ₂ is formed on the surface by thermally oxidizing the Si substrate so that heat-generating materials and phase change substances are not conducted through the Si substrate, or the Si substrate is formed. A single-layer or multiple-layer electrical insulating layer of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ or the like is formed thereon by CVD or sputtering. Next, a heat generating material such as Si, Pt, or NiCr is laminated on the electrical insulating layer by CVD or sputtering, a pattern is formed by photoetching, and the heat generating portion is arranged. Furthermore, each phase change material is formed into a film by CVD, sputtering or various thin film manufacturing methods, and a pattern is formed by photolithography. By using Si formed on the Si substrate, the electrical insulation layer, or the electrical insulation layer for the CMOS element structure, peripheral circuits can be formed and integrated in the same chip. In the case of using a Si substrate having an SOI (Si On Insulator) structure, the BOX layer is used as an electrical insulating layer, and the SOI layer is patterned by photoetching and arranged as a heat generating portion. Next, after coating the surface with an electrically insulating layer, a phase change material is formed on the electrically insulating layer by various thin film manufacturing methods such as CVD, sputtering, and sol-gel method, and a pattern is formed by photolithography. Further, by using a substrate, a BOX layer, or an SOI layer as a CMOS element structure, peripheral circuits can be formed and integrated in the same chip.

  Since the heat generating portion 13 is thinner or narrower than the lead 12, it has a large electric resistance value and can generate Joule heat by supplying a current. By supplying current from the end of the lead 12, the heat generating part 13 rises in temperature due to Joule heat generation, and the laminated phase change materials 14, 31, 32 are also close to the heat generating part 13 and have a minute amount, so Become.

  These are mechanisms in which a plurality of phase change materials having different phase transition temperatures are heated to a temperature at which a phase change is performed by a heat generating unit, and the temperature detection unit is calibrated as a known temperature by detecting each phase transition. A phase change material is a material that undergoes phase transition in a narrow temperature range with high reproducibility and high accuracy. In addition, before and after the phase transition, any change in temperature, electrical resistance value, volume, stress, mass, heat capacity, natural frequency, dielectric constant, transmittance, or reflectance can be detected. It is a substance. Furthermore, in order to perform calibration with high accuracy, the phase change material has a phase transition temperature close to the temperature to be used, and is preferably a metal, oxide, or organic material having a narrow phase transition temperature characteristic.

  In order to obtain temperature detection with higher accuracy, it is preferable that the phase transition temperature is as close as possible to the temperature detection range using the freezing point of the standard substance shown in the international temperature scale (ITS-90). For example, if the temperature detection range of an IC temperature sensor used in general electronic equipment is −40 to + 125 ° C., the phase change material A is In (Mpa = 156.5985 ° C.) and the phase change material B is Sn (Mpb = 231.928 ° C), and the material of the heat generating part and temperature detecting part is in the range of -40 to + 232 ° C. Pt having a linear characteristic that does not affect the accuracy of the detected value is suitable. There are two calibration points, Mpa and Mpb, but the number may be more than that. If the material of the heat generating part is stable Pt or Si at high temperature, Zn: 419.527 ° C, Al: By using 660.323 ° C., the accuracy can be further increased.

  Further, as described above, the heat generating part is used to cause phase transition of the phase change material. However, by controlling the temperature according to the temperature of the installation environment of the electric element, the phase transition of the phase change material can be detected and known. The phase transition temperature can be determined. Therefore, it may be a facility with low temperature control accuracy with an air temperature distribution, rather than a temperature standard facility as high as the conventional calibration facility. Further, it is possible to detect the phase transition of the phase change material of each electric element and perform calibration with high accuracy.

  As described above, according to the embodiment, as shown in FIG. 1, a phase change material having a known phase transition temperature undergoes a phase change at the phase transition temperature. By detecting this phase change, it can be detected that a known phase transition temperature has been reached. Therefore, as shown in FIG. 8, the phase change material 14 and the heat generating portion 13 that heats the phase change material 14 are arranged in parallel on the substrate 11. Further, the phase change material 14 is irradiated with light from the light emitting unit 16 through the optical waveguide 15, and the light transmitted through the phase change material 14 is received by the light receiving unit 17 through the optical waveguide 15. Then, heating by the heat generating unit 13 is performed, and a change in the electrical signal converted and output by the light receiving unit 17 at the phase transition temperature is detected, thereby detecting the phase transition of the phase change material. Thereby, temperature calibration can be performed by the element itself based on the temperature of the heat generating part 13 when the phase transition is detected. Thereby, heating control of the heat generating part 13 is simplified, temperature distribution due to heating of the heat generating part 13 is easily controlled, and temperature accuracy can be ensured. In addition, since it is not affected by the electrical conductivity of the phase change material, the number of types of phase change material that can be applied increases, the phase transition temperature can be selected abundantly, and the flexibility of the calibration temperature is large. Since the phase transition temperature of the phase change material is a known value, the temperature can be determined with high accuracy by accurately detecting the occurrence of the phase transition phenomenon. Costs associated with the conventional calibration process can be reduced, and calibration can be performed anywhere, anytime, so long-term accuracy can be maintained.

  In addition, according to the embodiment, as shown in FIG. 10, the heat generating part 13 that heats the phase change material 14 is provided on the substrate 11, and the optical waveguide 15 is arranged in parallel at a location away from the heat generating part 13. The phase change material 14 is directly laminated on the optical waveguide 15. Further, as shown in FIG. 11, the phase change material 14 is arranged in parallel so as to contact the optical waveguide 15. As a result, cost can be reduced and high-precision control can be performed without requiring complicated control.

  Further, according to the embodiment, in order to disperse and arrange the phase change material 14 at the location adjacent to the heat generating portion 13, the heat generating portions 13 are arranged in a meandering manner as shown in FIG. By arranging the optical waveguides 15 in parallel and spaced apart from each other and laminating the phase change material 14 directly on the optical waveguides 15, it is possible to arrange them in a high density locally, and to perform control with higher accuracy. Become. Further, as shown in FIG. 15, the heat generating portion 13 and the phase change material 14 are respectively arranged so as to be concentric, and are parallel or stacked on the substrate 11. Thereby, it heats equally from a heat-emitting part and an accuracy improves.

  In addition, according to the embodiment, as illustrated in FIG. 17, two phase change materials 31 and 32 having different phase transition temperatures and a heating unit 13 that heats each phase change material are provided on the substrate 11. . And the change of the optical characteristic of each phase change substance is detected. According to the electrical element having such a structure, when heated by the heat generating portion 13, the light transmission, which is one of the optical characteristics of the phase change materials 31 and 32, changes at each known phase transition temperature. . By detecting this change, the phase transition of the phase change substances 31 and 32 is detected. Thereby, since the phase transition temperature of each phase change substance has two known values, the temperature can be determined with high accuracy by accurately detecting the occurrence of the phase transition phenomenon.

  Furthermore, according to the embodiment, as shown in FIG. 21, the phase change material 14 is irradiated with light from the light emitting unit 16, and is irradiated on the surface of the phase change material 14 while reflecting inside the cavity. The light reflected by the phase change material 14 is received by the light receiving unit 17. Then, heating by the heat generating unit 13 is performed, and a change in the electrical signal converted and output by the light receiving unit 17 at the phase transition temperature is detected, thereby detecting the phase transition of the phase change material. Thereby, heating control of the heat generating part 13 is simplified, temperature distribution due to heating of the heat generating part 13 is easily controlled, and temperature accuracy can be ensured. In addition, since it is not affected by the electrical conductivity of the phase change material, the number of types of phase change material that can be applied increases, the phase transition temperature can be selected abundantly, and the flexibility of the calibration temperature is large. Since the phase transition temperature of the phase change material is a known value, the temperature can be determined with high accuracy by accurately detecting the occurrence of the phase transition phenomenon.

  In addition, according to the embodiment, as shown in FIG. 9 and the like, the cavity 21 is provided in the substrate 11 in the region where at least the phase change material 14 is provided. Thereby, rapid temperature control can be performed.

  Furthermore, according to the embodiment, as shown in FIG. 12, an electrical insulating layer 22 that covers at least the periphery of the phase change material 14 with an insulating material is formed. Thereby, it is possible to prevent the phase change material from being chemically changed by the ambient atmosphere, and highly accurate control can be performed with high reliability.

  Further, according to the embodiment, an electric circuit and a circuit element are integrated to constitute an integrated circuit. Thereby, the control with respect to the temperature of the circuit element which has temperature dependence can be performed accurately. In addition, the self-temperature calibration function eliminates the need for a circuit element temperature calibration step, thereby reducing the cost of the circuit element itself.

  Furthermore, according to the embodiment, the electric element is integrated in a temperature-dependent semiconductor or electronic component. This eliminates the need for temperature calibration equipment and processes for mass-produced semiconductors or electronic components, and enables production at any manufacturing plant and provides semiconductors or electronic components at an inexpensive price.

DESCRIPTION OF SYMBOLS 1 Electric element 11 Board | substrate 12 Lead 13 Heat generating part 14 Phase change material 15 Optical waveguide 16 Light emitting part 17 Light receiving part 18 Lead 19 Detection lead 20 Electrical insulating layer 21 Cavity 22 Electrical insulating layer 23 Penetration space 24 Gap 31 Phase change substance 32 Phase change Substance 33 Phase change material 40 Electronic circuit 50 Input / output terminal group

Japanese Patent No. 4178729 JP-A-2-039213

Claims (24)

In an electric element having temperature dependence,
A phase change portion having a known phase transition temperature and having a light transmissive phase change material;
Detecting a change in optical properties of the phase change material accompanying a change in temperature, and detecting that a phase transition of the phase change material has occurred due to a change in the optical properties of the detected phase change material;
A temperature calibration unit for performing temperature calibration with the temperature when the phase transition detected by the detection unit occurs as the known phase transition temperature; and
An electric element, wherein a heat generating portion for heating the phase change material is provided integrally on a substrate. The electrical element according to claim 1,
The detection unit includes a light emitting unit that irradiates light to the phase change material, and a light receiving unit that receives light transmitted through the phase change material and converts it into an electrical signal. An electrical element which detects that a phase transition of the phase change substance has occurred based on an electrical signal from In an electric element having temperature dependence,
A phase change portion having a known phase transition temperature and having a light reflective phase change material;
Detecting a change in optical properties of the phase change material accompanying a change in temperature, and detecting that a phase transition of the phase change material has occurred due to a change in the optical properties of the detected phase change material;
A temperature calibration unit for performing temperature calibration with the temperature when the phase transition detected by the detection unit occurs as the known phase transition temperature; and
An electric element, wherein a heat generating portion for heating the phase change material is provided integrally on a substrate. The electrical element according to claim 3,
The detection unit includes a light emitting unit that irradiates the phase change material with light, and a light receiving unit that receives the light reflected by the phase change material and converts the light into an electrical signal. An electrical element which detects that a phase transition of the phase change substance has occurred based on an electrical signal from The electric element according to claim 2 or 4,
An electrical element comprising an optical waveguide that guides light emitted from the light emitting unit to the phase change material. The electrical element according to claim 2, wherein
An electrical element comprising an optical waveguide for guiding light that has passed through the phase change material to the light receiving portion. The electric element according to claim 4, wherein
An electric element comprising an optical waveguide for guiding light reflected by the phase change substance to the light receiving portion. In the electric element according to any one of claims 1 to 7,
An electrical element, wherein a cavity is provided in at least the substrate in a region where the phase change portion is provided. The electrical device according to claim 8, wherein
An electric element characterized in that an optical path for guiding the light irradiated from the light emitting part and reflected by the phase change material to the light receiving part is an optical path reflected by a wall surface of the cavity. The electric element according to any one of claims 1 to 9,
The electrical element, wherein the phase change material is a material defined in International Temperature Scale ITS-90. The electric element according to any one of claims 1 to 10,
At least the phase change portion is stacked on the substrate. The electric element according to any one of claims 1 to 10,
At least the phase change portion is arranged in parallel on the substrate. The electrical element according to any one of claims 1 to 12,
An electrical element characterized in that the phase change material is dispersedly arranged at locations separated from the heat generating portion. The electrical element according to claim 13,
An electric element, wherein the heat generating portions are arranged in a meandering manner, and the phase change portions are provided in parallel along the meandering heat generating portions. The electrical element according to claim 13,
An electric element characterized in that the heat generating portion is arranged in a meandering manner, and the phase change portion is provided in a stack along the meandering heat generating portion. The electrical element according to claim 13,
The electric element, wherein the heat generating portion and the phase change portion are arranged so as to be concentric. The electrical element according to any one of claims 1 to 16,
An electrical element comprising an electrical insulating material between the heat generating portion and the phase change portion. The electrical element according to any one of claims 1 to 17,
An electric element characterized in that a temperature detection range by the heat generating part is within a temperature range near the phase transition temperature. The electrical element according to any one of claims 1 to 18,
A plurality of the phase change materials to be melted and become an alloy are provided, and each phase change material is melted to become an alloy of the phase change material by increasing the temperature, and the optical property change of the phase change material of the alloy is detected to detect the above of the alloy. An electrical element that detects a phase transition of a phase change material. The electric element according to any one of claims 1 to 4,
The phase change unit includes a plurality of the phase change materials having different known phase transition temperatures, and detects a change in each optical characteristic of each phase change material to detect a phase transition of each phase change material. An electrical element characterized by that. The electrical element according to any one of claims 1 to 20,
An electrical element comprising a surface protective film covering at least the periphery of the phase change portion with an insulating material.   An electrical element in which a plurality of electrical elements according to any one of claims 1 to 21 are integrated.   23. An integrated circuit comprising the electric element according to any one of claims 1 to 22 and a circuit element integrated therein.   23. An electronic circuit comprising the electric element according to claim 1 integrated with a temperature-dependent semiconductor or electronic component.

Images