JP5396264B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5396264B2 JP5396264B2 JP2009295392A JP2009295392A JP5396264B2 JP 5396264 B2 JP5396264 B2 JP 5396264B2 JP 2009295392 A JP2009295392 A JP 2009295392A JP 2009295392 A JP2009295392 A JP 2009295392A JP 5396264 B2 JP5396264 B2 JP 5396264B2
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- 230000008021 deposition Effects 0.000 title description 6
- 239000007789 gas Substances 0.000 claims description 317
- 239000012495 reaction gas Substances 0.000 claims description 174
- 238000000926 separation method Methods 0.000 claims description 122
- 239000010408 film Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 17
- 238000011144 upstream manufacturing Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 61
- 238000012545 processing Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 19
- 238000012546 transfer Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 14
- 238000010926 purge Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000002052 molecular layer Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 238000007599 discharging Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical group O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Description
なお、反応ガスノズル321は、ガス流路326が回転テーブル2の回転方向下流側に位置するように配置しても良い。この場合、反応ガスノズル321の下面が、ガス流路326に対して回転テーブル2の回転方向上流側に配置され、N2ガスの反応ガスノズル321の下方への侵入を妨げるのに寄与し得るため、反応ガスのN2ガスによる希釈がより確実に抑制される。
なお、図15及び図16に示す反応ガスインジェクタ3A,3Bは、例えばO3ガスを回転テーブル2の表面に向けて供給するために使用されて良い。
・反応ガスノズル31からのBTBASガスの供給量: 100sccm
・分離ガスノズル41,42からのN2ガスの供給量: 14,500sccm
・回転テーブル2の回転速度: 20rpm
・反応ガスノズル31と回転テーブル2との間の間隔: 4mm
・反応ガスノズル31の吐出孔33の内径: 0.5mm
・吐出孔33の間隔(ピッチ): 10mm
という条件で行った。なお、反応ガスノズル31にはノズルカバー34(図12、図14)は取り付けられていない。
Claims (5)
- 容器内にて、互いに反応する少なくとも2種類の反応ガスを順番に基板に供給する供給サイクルを複数回実行することにより、反応生成物の複数の層を積層して薄膜を形成する成膜装置であって、
前記容器内に回転可能に設けられ、基板が載置される基板載置領域を第1の面に含む回転テーブル;
前記容器内の第1の供給領域に配置され、前記回転テーブルの回転方向と交わる方向に延び、前記回転テーブルの前記第1の面へ第1の反応ガスを供給する第1の反応ガス供給部;
前記第1の供給領域から前記回転テーブルの前記回転方向に沿って離間する第2の供給領域に配置され、前記回転方向と交わる方向に延び、前記回転テーブルの前記第1の面へ第2の反応ガスを供給する第2の反応ガス供給部;
前記第1の反応ガスと前記第2の反応ガスとを分離する分離ガスを吐出する分離ガス供給部と、該分離ガス供給部からの前記分離ガスを前記第1の供給領域及び前記第2の供給領域へ向けて供給する、前記第1の面との間に所定の高さを有する分離空間を形成する天井面とを含み、前記第1の供給領域と前記第2の供給領域との間に配置される分離領域であって、当該分離領域を形成する空間の高さは、前記第1の供給領域及び前記第2の供給領域の各々を形成する空間の高さよりも低い、分離領域;
前記第1の供給領域に対して設けられる第1の排気口;及び
前記第2の供給領域に対して設けられる第2の排気口;
を備え、
前記第1の排気口及び前記第2の排気口の少なくとも一方の排気口が、当該排気口に対応する供給領域へ向かって前記分離領域から供給される前記分離ガスを、当該供給領域の反応ガス供給部が延びる第1の方向に沿う方向に導くように配置される成膜装置。 - 前記少なくとも一方の排気口が、当該排気口に対応する供給領域の反応ガス供給部の前記第1の方向上の位置から、当該反応ガス供給部に対して前記回転方向上流側の前記分離領域までの間に配置される、請求項1に記載の成膜装置。
- 前記第1の反応ガス供給部及び前記第2の反応ガス供給部の少なくとも一方の反応ガス供給部に取り付けられる流路画成部材であって、当該反応ガス供給部と前記第1の面との間に前記分離ガスが流れ込むのを抑制する板部材を含む当該流路画成部材を更に備える、請求項1又は2に記載の成膜装置。
- 前記第1の反応ガス供給部及び前記第2の反応ガス供給部の少なくとも一方の反応ガス供給部が、
当該反応ガス供給部から前記第1の面へ向かう方向からずれた方向に開口し、対応する反応ガスを吐出する吐出孔と、
前記吐出孔から吐出された当該反応ガスを前記第1の面へ案内する案内板と
を含む、請求項1又は2に記載の成膜装置。 - 前記所定の高さが、前記分離空間の圧力を記第1の供給領域及び前記第2の供給領域の圧力よりも高く維持し得るように設定される、請求項1から4のいずれか一項に記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009295392A JP5396264B2 (ja) | 2009-12-25 | 2009-12-25 | 成膜装置 |
US12/965,955 US20110155062A1 (en) | 2009-12-25 | 2010-12-13 | Film deposition apparatus |
KR1020100134591A KR101373946B1 (ko) | 2009-12-25 | 2010-12-24 | 성막 장치 |
TW099145682A TWI493074B (zh) | 2009-12-25 | 2010-12-24 | 成膜裝置(二) |
CN201010621824.2A CN102134710B (zh) | 2009-12-25 | 2010-12-24 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009295392A JP5396264B2 (ja) | 2009-12-25 | 2009-12-25 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011135004A JP2011135004A (ja) | 2011-07-07 |
JP5396264B2 true JP5396264B2 (ja) | 2014-01-22 |
Family
ID=44185907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009295392A Active JP5396264B2 (ja) | 2009-12-25 | 2009-12-25 | 成膜装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110155062A1 (ja) |
JP (1) | JP5396264B2 (ja) |
KR (1) | KR101373946B1 (ja) |
CN (1) | CN102134710B (ja) |
TW (1) | TWI493074B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5696619B2 (ja) * | 2011-08-17 | 2015-04-08 | 東京エレクトロン株式会社 | 成膜装置 |
JP5712879B2 (ja) * | 2011-09-22 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び基板処理装置 |
US9991153B2 (en) * | 2013-03-14 | 2018-06-05 | Applied Materials, Inc. | Substrate support bushing |
JP6115244B2 (ja) * | 2013-03-28 | 2017-04-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP6529973B2 (ja) * | 2013-11-26 | 2019-06-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | バッチ処理用傾斜プレート及びその使用方法 |
JP6221932B2 (ja) * | 2014-05-16 | 2017-11-01 | 東京エレクトロン株式会社 | 成膜装置 |
JP6318869B2 (ja) * | 2014-05-30 | 2018-05-09 | 東京エレクトロン株式会社 | 成膜装置 |
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JP2011135004A (ja) | 2011-07-07 |
TWI493074B (zh) | 2015-07-21 |
CN102134710A (zh) | 2011-07-27 |
KR20110074717A (ko) | 2011-07-01 |
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CN102134710B (zh) | 2015-02-11 |
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