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JP5122769B2 - Piezoelectric piece and piezoelectric piece forming method - Google Patents

Piezoelectric piece and piezoelectric piece forming method Download PDF

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JP5122769B2
JP5122769B2 JP2006182417A JP2006182417A JP5122769B2 JP 5122769 B2 JP5122769 B2 JP 5122769B2 JP 2006182417 A JP2006182417 A JP 2006182417A JP 2006182417 A JP2006182417 A JP 2006182417A JP 5122769 B2 JP5122769 B2 JP 5122769B2
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piezoelectric piece
piezoelectric
plate
base
corner
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JP2008010786A (en
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良太 河合
敦哉 高橋
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Kyocera Crystal Device Corp
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Description

本発明は、電子部品に用いられる圧電片及び圧電片形成方法に関する。   The present invention relates to a piezoelectric piece used for an electronic component and a piezoelectric piece forming method.

近年の電子機器、例えば、携帯情報端末装置等の移動体通信機は、単なる通話機能に加えて様々な付加的機能が組み込まれつつも小型化が進んでいる。これに伴いこの移動体通信機に用いられる電子部品もさらなる小型化が求められている。ここで、電子部品の一例として角速度センサ素子について説明する。この角速度センサ素子においては、水晶振動素子と比較して電極の数が多く、多軸化が進むと小型の圧電片に多くの電極を配置することとなる(例えば、特許文献1参照)。この角速度センサ素子に用いる圧電片を人工水晶から形成する場合、圧電片は、例えば、圧電ウェハにプロテクト膜を形成し、その上にレジスト膜を形成し、圧電片の外形となるマスクを重ねて露光し、ウェットエッチングを行って形成される。さらには、圧電ウェハは、育成された結晶体をランバート加工し、薄く切断して厚さを均一にするために厚み研磨を行い、その後、ポリッシュ、ライトエッチング等の整形が行われて形成される。   2. Description of the Related Art In recent years, electronic devices such as mobile communication devices such as portable information terminal devices have been reduced in size while incorporating various additional functions in addition to a simple call function. Accordingly, further miniaturization of electronic components used in the mobile communication device is required. Here, an angular velocity sensor element will be described as an example of an electronic component. In this angular velocity sensor element, the number of electrodes is larger than that of the crystal vibrating element, and as the number of axes increases, a large number of electrodes are arranged on a small piezoelectric piece (see, for example, Patent Document 1). When the piezoelectric piece used for the angular velocity sensor element is formed from artificial quartz, the piezoelectric piece is formed by, for example, forming a protective film on a piezoelectric wafer, forming a resist film thereon, and overlaying a mask that forms the outer shape of the piezoelectric piece. It is formed by exposure and wet etching. Furthermore, the piezoelectric wafer is formed by lambert processing the grown crystal body, thinly cutting it and performing thickness polishing to make the thickness uniform, and then shaping such as polishing and light etching. .

例えば、図7に示すように、圧電片100を、基部2とこの基部2から放射状に延出する複数の検出腕部3と隣り合う検出腕部3の端部と接続する励振腕部4とで構成した場合、前記に示す工程でこの圧電片を形成すると、検出腕部3と励振腕部4とで形成される入隅部Cに残渣Nが生じ、基部2と検出腕部3とで形成される入隅部Cにも残渣Nが生じる。また基部、励振腕部、検出腕部、のそれぞれに、非対称な残渣Nが生じる。
この残渣Nは、検出腕部3の側面と励振腕部4の側面とを入隅部Cでつなぐように生じ、基部2の側面と検出腕部3の側面とを入隅部Cでつなぐように生じる。
なお、この圧電片100の所定の部位に励振電極、検出電極等が設けられると慣性センサ素子となる。
特開2006−17538号公報(段落0011〜0035、図5)
For example, as shown in FIG. 7, the piezoelectric arm 100 is connected to the base 2, a plurality of detection arms 3 extending radially from the base 2, and the excitation arm 4 connected to the end of the adjacent detection arm 3. When the piezoelectric piece is formed in the above-described process, a residue N is generated in the corner C formed by the detection arm portion 3 and the excitation arm portion 4, and the base portion 2 and the detection arm portion 3 Residue N is also generated in the formed corner C. In addition, an asymmetric residue N is generated in each of the base, the excitation arm, and the detection arm.
The residue N is generated so as to connect the side surface of the detection arm portion 3 and the side surface of the excitation arm portion 4 at the corner portion C, and to connect the side surface of the base portion 2 and the side surface of the detection arm portion 3 at the corner portion C. To occur.
In addition, if an excitation electrode, a detection electrode, etc. are provided in the predetermined part of this piezoelectric piece 100, it will become an inertial sensor element.
JP 2006-17538 A (paragraphs 0011 to 0035, FIG. 5)

しかしながら、圧電ウェハから圧電片100をウェットエッチングで形成する場合、エッチングの異方性による影響で結晶面のエッチングレートが異なることにより、圧電片100の外形が圧電ウェハの主面に対して直角方向にかたどられずに残渣Nが生じ、圧電片100の外形形状(形状)は、非対称となる。
このような残渣Nは、圧電片100の形状が鋭角になる部分に多く形成されることがあり、振動バランスの悪化によるスプリアスモードとの結合、温度特性の悪化、Q値の低下等の振動特性を悪化させる原因となっていた。
However, when the piezoelectric piece 100 is formed by wet etching from the piezoelectric wafer, the crystal surface etching rate differs due to the influence of etching anisotropy, so that the outer shape of the piezoelectric piece 100 is perpendicular to the main surface of the piezoelectric wafer. Residue N is generated without being traced, and the outer shape (shape) of the piezoelectric piece 100 is asymmetric.
Such a residue N may be formed in a portion where the shape of the piezoelectric piece 100 becomes an acute angle, and vibration characteristics such as coupling with a spurious mode due to deterioration of vibration balance, deterioration of temperature characteristics, and reduction of Q value. It was a cause of worsening.

そこで、本発明では、前記した問題を解決し、残渣の発生を減少させる圧電片及び圧電片形成方法を提供することを課題とする。   Accordingly, an object of the present invention is to provide a piezoelectric piece and a piezoelectric piece forming method that solve the above-described problems and reduce the generation of residues.

前記課題を解決するため、本発明は、基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片であって、前記基部と前記検出腕部とで形成される円弧形状の入隅部と、前記検出腕部と前記励振腕部とで形成される円弧形状の入隅部とがドリルによる穿孔により形成されることを特徴とする。
In order to solve the above-described problem, the present invention includes a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions. A piezoelectric piece made of a piezoelectric material having n-fold symmetry, which is formed of an arcuate corner formed by the base and the detection arm, the detection arm and the excitation arm. An arcuate corner is formed by drilling with a drill .

また、本発明は、基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片であって、前記基部と前記励振腕部とで形成される円弧形状の入隅部と、前記基部と前記検出腕部とで形成される円弧形状の入隅部とがドリルによる穿孔により形成されることを特徴とする。
Further, the present invention is a piezoelectric piece made of a piezoelectric material having n-fold symmetry, comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases, characterized in that the internal corner portion of an arc shape formed between the base and the excitation arm portion, and the inner corner portion of an arc shape formed between the base and the detector arm portion is formed by drilling with a drill And

また、本発明は、基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、結晶育成装置により育成された結晶体を整形し、前記結晶体の主面において前記振動片の前記基部と前記検出腕部とで形成される入隅部となる部分と、前記検出腕部と前記励振腕部とで形成される入隅部となる部分とを穿孔する穿孔工程と、穿孔された前記結晶体を該結晶体の主面と平行にスライスして板状体に整形する板状体整形工程と、前記板状体において前記穿孔した部分が前記圧電片の前記入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、を備えることを特徴とする。   Further, the present invention provides n-fold symmetry including a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions. A piezoelectric piece forming method for forming a piezoelectric piece made of a piezoelectric material having a shape of a crystal grown by a crystal growing device, and the base of the vibrating piece and the detection arm on the main surface of the crystal A drilling step of drilling a portion to be an entrance corner formed by the above and a portion to be an entrance corner formed by the detection arm portion and the excitation arm portion; and the drilled crystal body to the crystal body A plate-shaped body shaping step of slicing in parallel with the main surface of the plate-shaped body, and forming the plate-shaped body in the plate-shaped body so that the perforated portion of the plate-shaped body is the corner of the piezoelectric piece. And a piezoelectric piece forming step of forming the piezoelectric piece.

また、本発明は、基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、結晶育成装置により育成された結晶体の主面と平行又は所定の角度でスライスして板状体に整形する板状体整形工程と、前記板状体の主面において前記基部と前記検出腕部とで形成される円弧形状の入隅部となる部分と、前記検出腕部と前記励振腕部とで形成される円弧形状の入隅部となる部分とをドリルで穿孔する穿孔工程と、前記板状体において前記ドリルで穿孔した部分が前記圧電片の前記円弧形状の入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、を備えることを特徴とする。
Further, the present invention provides n-fold symmetry including a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions. A piezoelectric piece forming method for forming a piezoelectric piece made of a piezoelectric material having a plate-like body shaping that is sliced at a predetermined angle in parallel to a main surface of a crystal grown by a crystal growth apparatus and shaped into a plate-like body process and arc shape formed by the inner corner portion become part of the arc shape formed by the base and the detector arm portion and the main surface of the plate-like body, and the detection arm section and the excitation arm portion A drilling step of drilling a portion to be a corner of the plate with a drill, and the plate-like body so that a portion of the plate-like body drilled with the drill becomes the arc-shaped corner of the piezoelectric piece. And a piezoelectric piece forming step of forming the piezoelectric piece.

また、本発明は、基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、結晶育成装置により育成された結晶体を整形し、前記結晶体の主面において前記基部と前記励振腕部とで形成される入隅部となる部分と、前記基部と前記検出腕部とで形成される入隅部となる部分とを穿孔する穿孔工程と、穿孔された前記結晶体を該結晶体の主面と平行にスライスして板状体に整形する板状体整形工程と、前記板状体において前記穿孔した部分が前記圧電片の前記入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、を備えることを特徴とする。   According to another aspect of the present invention, there is provided a piezoelectric element for forming a piezoelectric piece made of a piezoelectric material having n-fold symmetry, comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases. A piece forming method, shaping a crystal grown by a crystal growing apparatus, a portion serving as a corner formed by the base and the excitation arm on the main surface of the crystal, and the base A perforating step for perforating a corner portion formed by the detection arm portion, and a plate shape for slicing the perforated crystal body parallel to the main surface of the crystal body and shaping it into a plate-like body A body shaping step, and a piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that the perforated portion of the plate-like body becomes the corner of the piezoelectric piece. To do.

また、本発明は、基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、結晶育成装置により育成された結晶体の主面と平行又は所定の角度でスライスして板状体に整形する板状体整形工程と、前記結晶体の主面において前記基部と前記励振腕部とで形成される円弧形状の入隅部となる部分と、前記基部と前記検出腕部とで形成される円弧形状の入隅部となる部分とをドリルで穿孔する穿孔工程と、前記板状体において前記ドリルで穿孔した部分が前記圧電片の前記円弧形状の入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、を備えることを特徴とする。
According to another aspect of the present invention, there is provided a piezoelectric element for forming a piezoelectric piece made of a piezoelectric material having n-fold symmetry, comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases. It is a piece forming method, a plate-like body shaping step for shaping into a plate-like body by slicing at a predetermined angle parallel or parallel to the principal surface of the crystal grown by the crystal growth apparatus, and on the principal surface of the crystal Drilling to drill a portion that is an arc-shaped corner formed by the base and the excitation arm and a portion that is an arc-shaped corner formed by the base and the detection arm And a piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that a portion drilled with the drill in the plate-like body becomes the arc-shaped corner of the piezoelectric piece. It is characterized by.

このような圧電片によれば、エッチング前に圧電片の入隅部を穿孔したことで、この入隅部に生じる残渣を従来よりも減少させることができる。
また、このような圧電片形成方法によれば、圧電片を形成する前に入隅部となる部分を穿孔することにより、従来よりも入隅部に生じる残渣を減少させることができる。
According to such a piezoelectric piece, a residue generated in the corner can be reduced as compared with the conventional one by punching the corner of the piezoelectric piece before etching.
Further, according to such a method for forming a piezoelectric piece, a residue generated in the corner can be reduced as compared with the prior art by punching a portion that becomes the corner before forming the piezoelectric piece.

次に、本発明を実施するための最良の形態(以下、「実施形態」という。)について、適宜図面を参照しながら詳細に説明する。なお、n回対称性(例えば、n=3、6等)を有する圧電材料を3回対称性を有する水晶として説明する。   Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. A piezoelectric material having n-fold symmetry (for example, n = 3, 6, etc.) will be described as quartz having three-fold symmetry.

(第一の実施形態)
図1は本発明の第一の実施形態に係る圧電片の一例を示す平面図である。図2は、結晶体の一例を示す斜視図である。図3は図2におけるA矢視方向から見た結晶体を穿孔した状態を示す平面図である。図4は、整形した結晶体を板状体にした状態を示す図である。図5は、板状体に圧電片を形成した状態の一例を示す図である。
(First embodiment)
FIG. 1 is a plan view showing an example of a piezoelectric piece according to the first embodiment of the present invention. FIG. 2 is a perspective view showing an example of a crystal body. FIG. 3 is a plan view showing a state in which the crystal body is seen from the direction of arrow A in FIG. FIG. 4 is a diagram showing a state in which the shaped crystal is formed into a plate-like body. FIG. 5 is a diagram illustrating an example of a state where a piezoelectric piece is formed on a plate-like body.

図1に示すように、本発明の第一の実施形態に係る圧電片10は、基部2と該基部2を中心に放射状に延出する複数の検出腕部3と、隣り合う該検出腕部3,3の端部と連結する複数の励振腕部4とを備えている。
このように構成される圧電片10は、基部2と検出腕部3とで入隅部Cが形成され、検出腕部3と励振腕部4とで入隅部Cが形成される。
As shown in FIG. 1, the piezoelectric piece 10 according to the first embodiment of the present invention includes a base portion 2, a plurality of detection arm portions 3 extending radially around the base portion 2, and the adjacent detection arm portions. A plurality of excitation arm portions 4 connected to the end portions 3 and 3 are provided.
In the piezoelectric piece 10 configured as described above, the corner portion C is formed by the base portion 2 and the detection arm portion 3, and the corner portion C is formed by the detection arm portion 3 and the excitation arm portion 4.

ここで、入隅部Cとは、凹んで形成されるコーナー部分(角部分)をいう。
この入隅部Cは、穿孔により円弧形状に設けられる。穿孔には、ドリルが用いられる。
これにより、結晶体K1(図2参照)に微少な貫通孔H(図3参照)を穿孔することができる。この穿孔によって圧電片10の入隅部Cに生じる残渣Nを減らすことができるようになっている。なお、結晶体K1は、例えば、Z板as−grown人工水晶からなる。
Here, the entering corner portion C refers to a corner portion (corner portion) formed to be recessed.
The corner C is provided in an arc shape by perforation. A drill is used for drilling.
Thereby, a minute through hole H (see FIG. 3) can be drilled in the crystal body K1 (see FIG. 2). By this perforation, the residue N generated at the corner C of the piezoelectric piece 10 can be reduced. The crystal body K1 is made of, for example, a Z-plate as-grown artificial crystal.

これは、従来は、ウェットエッチングを行うと、この入隅部Cでエッチングレートの異なる結晶面で残渣Nが連結することとなり、残渣Nが多く生じていたが、基部2と検出腕部3とで形成される入隅部Cと、検出腕部3と励振腕部4とで形成される入隅部Cとを穿孔したことにより、圧電片10のウェットエッチングで形成される部分において、従来よりも入隅部Cに生じる残渣Nを減少させることができる。   Conventionally, when wet etching is performed, the residue N is connected to a crystal plane having a different etching rate at the corner C, and a lot of residue N is generated. However, the base 2 and the detection arm 3 In the portion formed by wet etching of the piezoelectric piece 10 by punching the entering corner portion C formed by the above and the entering corner portion C formed by the detection arm portion 3 and the excitation arm portion 4, Also, the residue N generated in the corner C can be reduced.

このように、本発明の第一の実施形態に係る圧電片10を構成したので、ウェットエッチング前に入隅部Cを穿孔したことで、この入隅部Cに生じる残渣Nを減少させることができる。
具体的には、圧電片10の入隅部Cとなる部分を穿孔した状態でウェットエッチングを行うと、エッチングレートの早い厚み方向が先に侵食されると、その侵食された部分が穿孔した部分にまで達し、残渣Nが、検出腕部3の側面と励振腕部4の側面とにつながらずに生じることとなり、また、基部2の側面と検出腕部3の側面とにつながらずに生じることとなる。この状態でウェットエッチングを続けると、基部2の側面に生じる残渣N、検出腕部3の側面に生じる残渣N、励振腕部4の側面に生じる残渣Nは、それぞれが隣り合う残渣に影響されずに侵食されることとなり、従来のように入隅部Cで侵食しきれなかった残渣Nを減少させることができる。
As described above, since the piezoelectric piece 10 according to the first embodiment of the present invention is configured, the residue N generated in the corner C can be reduced by drilling the corner C before wet etching. it can.
Specifically, when wet etching is performed in a state in which the portion to be the corner C of the piezoelectric piece 10 is perforated, when the thickness direction with a high etching rate is eroded first, the eroded portion is a perforated portion. The residue N is generated without being connected to the side surface of the detection arm portion 3 and the side surface of the excitation arm portion 4, and is generated without being connected to the side surface of the base portion 2 and the side surface of the detection arm portion 3. It becomes. If wet etching is continued in this state, the residue N generated on the side surface of the base 2, the residue N generated on the side surface of the detection arm portion 3, and the residue N generated on the side surface of the excitation arm portion 4 are not affected by the adjacent residues. As a result, the residue N that could not be eroded at the entrance corner C as in the prior art can be reduced.

次に、本発明の第一の実施形態に係る圧電片10の圧電片形成方法について説明する。   Next, a piezoelectric piece forming method of the piezoelectric piece 10 according to the first embodiment of the present invention will be described.

(穿孔工程)
結晶育成装置(図示せず)により育成された結晶体を整形(図2参照)し、前記結晶体の主面において基部2と検出腕部3とで形成される入隅部Cとなる部分と、検出腕部3と励振腕部4とで形成される入隅部Cとなる部分とをドリルで穿孔する。
ここで、結晶育成装置( 図示せず)によって形成された結晶体は、Z板as−grown人工水晶であって、育成した状態ではその表面が波打つように不均一となっている(図示せず)。この不均一な状態をランバート加工により均一な表面となる結晶体K1(図2参照)に整形する。
この結晶体K1に、例えば、最終的に設ける圧電片10の形状を記し、入隅部Cとなる部分をドリルで穿孔する(図3参照)。
(Punching process)
A crystal grown by a crystal growth apparatus (not shown) is shaped (see FIG. 2), and a portion to be a corner C formed by the base 2 and the detection arm 3 on the main surface of the crystal; Then, a portion that becomes the corner C formed by the detection arm portion 3 and the excitation arm portion 4 is drilled with a drill.
Here, the crystal formed by the crystal growth apparatus (not shown) is a Z-plate as-grown artificial quartz, and in the grown state, the surface is non-uniform so as to wave (not shown). ). This non-uniform state is shaped into a crystalline body K1 (see FIG. 2) having a uniform surface by Lambert processing.
For example, the shape of the piezoelectric piece 10 to be finally provided is described in the crystal body K1, and a portion to be the corner C is drilled with a drill (see FIG. 3).

(板状体整形工程)
穿孔された結晶体K1を該結晶体K1の主面と平行にスライスして板状体K2(図4参照)に整形する。
ここで、穿孔が完了した後に、結晶体K1の主面と平行にスライス(切断)する。このスライスによって、結晶体K1から所定の厚さの複数の板状体K2を整形し、圧電ウェハとする。なお、スライスした後に、厚みを均一にするために厚み研磨、ポリッシュ、ライトエッチングを行って、表面が滑らかな状態の板状体K2にする。
(Plate-shaped body shaping process)
The perforated crystal body K1 is sliced parallel to the main surface of the crystal body K1 and shaped into a plate-like body K2 (see FIG. 4).
Here, after the drilling is completed, the slice is cut (cut) in parallel with the main surface of the crystal body K1. By this slicing, a plurality of plate-like bodies K2 having a predetermined thickness are shaped from the crystal body K1 to obtain a piezoelectric wafer. In addition, after slicing, thickness polishing, polishing, and light etching are performed to make the thickness uniform, so that the plate-like body K2 having a smooth surface is obtained.

(圧電片形成工程)
板状体K2において穿孔した貫通孔H(図3及び図4参照)が圧電片10の円弧形状の入隅部Cとなるように板状体K2に圧電片10を形成する(図5参照)。
ここで、板状体K2にプロテクト膜(図示せず)を形成し、このプロテクト膜の上にレジスト(図示せず)を形成する。この状態で、ドリルで穿孔した貫通孔Hが圧電片10の円弧形状の入隅部Cとなるように圧電片10の形状を記したマスクを重ねて露光装置(図示せず)により当該板状体K2を露光させる。その後、板状体K2を現像し、露出する金属膜(プロテクト膜) をエッチングして除去し、板状体K2をウェットエッチングする。これにより圧電片10の形状が板状体K2に設けられることとなる。
(Piezoelectric piece forming process)
The piezoelectric piece 10 is formed in the plate-like body K2 so that the through hole H (see FIGS. 3 and 4) drilled in the plate-like body K2 becomes the arc-shaped corner C of the piezoelectric piece 10 (see FIG. 5). .
Here, a protective film (not shown) is formed on the plate-like body K2, and a resist (not shown) is formed on the protective film. In this state, a mask describing the shape of the piezoelectric piece 10 is overlapped so that the through-hole H drilled with a drill becomes the arcuate corner C of the piezoelectric piece 10, and the plate shape is formed by an exposure apparatus (not shown). The body K2 is exposed. Thereafter, the plate-like body K2 is developed, the exposed metal film (protective film) is removed by etching, and the plate-like body K2 is wet-etched. Thereby, the shape of the piezoelectric piece 10 is provided in the plate-like body K2.

このとき、他の部分より残渣Nが多く生じる圧電片10の円弧形状の入隅部Cがドリルで穿孔されているので、圧電片10の入隅部Cとなる部分を穿孔した状態でウェットエッチングを行うと、エッチングレートの早い厚み方向が先に侵食され、その侵食された部分が穿孔した部分にまで達し、残渣Nが、検出腕部3の側面と励振腕部4の側面とにつながらずに生じることとなり、また、基部2の側面と検出腕部3の側面とにつながらずに生じることとなる。この状態でウェットエッチングを続けると、基部2の側面に生じる残渣N、検出腕部3の側面に生じる残渣N、励振腕部4の側面に生じる残渣Nは、それぞれが隣り合う残渣に影響されずに侵食されることとなり、従来のように入隅部Cで侵食しきれなかった残渣Nを減少させることができる。
At this time, since the internal corner portion C of the arc shape of the piezoelectric element 10 caused many residue N than the other portion is drilled, wet etching while drilling a portion to be the internal corner portion C of the piezoelectric element 10 As a result, the thickness direction with a fast etching rate is eroded first, the eroded portion reaches the perforated portion, and the residue N is not connected to the side surface of the detection arm portion 3 and the side surface of the excitation arm portion 4. In addition, it occurs without being connected to the side surface of the base portion 2 and the side surface of the detection arm portion 3. If wet etching is continued in this state, the residue N generated on the side surface of the base 2, the residue N generated on the side surface of the detection arm portion 3, and the residue N generated on the side surface of the excitation arm portion 4 are not affected by the adjacent residues. As a result, the residue N that could not be eroded at the entrance corner C as in the prior art can be reduced.

このように、本発明の第一の実施形態に係る圧電片10の圧電片形成方法を構成したので、入隅部Cに生じる残渣Nを減少させることができる。   Thus, since the piezoelectric piece formation method of the piezoelectric piece 10 which concerns on 1st embodiment of this invention was comprised, the residue N which arises in the corner C can be reduced.

このように形成される本発明の第一の実施形態に係る圧電片10の励振腕部4に励振用電極(図示せず)を形成し検出腕部3に検出用電極(図示せず)を形成して、例えば、慣性センサ素子に用いれば、圧電片10の形状が入隅部Cの部分で残渣Nによらず対称性を有しているので、残渣Nによる圧電片10の形状の非対称性による振動バランスの悪化を防ぐことでスプリアスモードとの結合を防ぎ、温度特性が改善され、Q値を増加させる等の振動特性を良好にさせる慣性センサ素子とすることができる。   An excitation electrode (not shown) is formed on the excitation arm portion 4 of the piezoelectric piece 10 according to the first embodiment of the present invention thus formed, and a detection electrode (not shown) is formed on the detection arm portion 3. For example, if it is used for an inertial sensor element, the shape of the piezoelectric piece 10 has symmetry regardless of the residue N at the corner portion C. Therefore, the shape of the piezoelectric piece 10 due to the residue N is asymmetric. By preventing the deterioration of the vibration balance due to the property, coupling with the spurious mode can be prevented, the temperature characteristics can be improved, and the inertial sensor element that improves the vibration characteristics such as increasing the Q value can be obtained.

なお、変形例として、板状体整形工程を行った後に穿孔工程を行って、その後、ウェットエッチングを行う圧電片形成工程を行っても良い。
この場合、結晶体K1を所定の角度でスライスして板状体K2を形成しても良い。
このようにすれば、各種振動モードに対応する圧電片を形成することができる。
このように構成しても、入隅部を穿孔しているので、第一の実施形態と同様の効果を奏する。
As a modification, a piezoelectric piece forming step in which a perforating step is performed after the plate-shaped body shaping step is performed, and then wet etching is performed may be performed.
In this case, the plate body K2 may be formed by slicing the crystal body K1 at a predetermined angle.
In this way, piezoelectric pieces corresponding to various vibration modes can be formed.
Even if comprised in this way, since the corner is perforated, the same effects as in the first embodiment can be obtained.

(第二の実施形態)
次に、本発明の第二の実施形態に係る圧電片20について説明する。
図6は本発明の第二の実施形態に係る圧電片の一例を示す平面図である。
(Second embodiment)
Next, the piezoelectric piece 20 according to the second embodiment of the present invention will be described.
FIG. 6 is a plan view showing an example of a piezoelectric piece according to the second embodiment of the present invention.

本発明の実施形態に係る圧電片20は、基部2と該基部2の一方から延出する励振腕部4と該基部2の他方から延出する検出腕部3とを備えて構成されている点で第一の実施形態と異なる。   The piezoelectric piece 20 according to the embodiment of the present invention includes a base 2, an excitation arm 4 extending from one of the bases 2, and a detection arm 3 extending from the other of the bases 2. This is different from the first embodiment.

例えば、音叉型構造の圧電片の場合は、基部の一方の端部から延出する励振腕部と、この励振腕部と平行に当該基部の他方の端部から延出する検出腕部とから構成される。
また、例えば、H型構造の圧電片の場合は、基部の両端部から平行に延出する一対の励振腕部と、この励振腕部と反対側に当該基部の他方の両端部から延出する一対の検出腕部とから構成される。本実施形態では、圧電片20がH型構造である場合について説明する。
For example, in the case of a piezoelectric fork with a tuning fork structure, an excitation arm that extends from one end of the base and a detection arm that extends from the other end of the base parallel to the excitation arm Composed.
Further, for example, in the case of an H-shaped piezoelectric piece, a pair of excitation arm portions extending in parallel from both end portions of the base portion, and extending from the other end portions of the base portion on the opposite side to the excitation arm portion. It comprises a pair of detection arms. In the present embodiment, a case where the piezoelectric piece 20 has an H-type structure will be described.

このように、H型構造となる圧電片20は、基部2と励振腕部4とで円弧形状の入隅部Cが形成され、基部2と検出腕部3とで円弧形状の入隅部Cが形成される。なお、このH型構造の圧電片20の場合、この圧電片20を支持する支持部Sが設けられるため、この支持部Sと基部2とでも円弧形状の入隅部Cが形成されることとなる。
Thus, in the piezoelectric piece 20 having an H-shaped structure, the base portion 2 and the excitation arm portion 4 form an arc-shaped corner C, and the base 2 and the detection arm portion 3 form an arc-shaped corner C. Is formed. In the case of the piezoelectric piece 20 having the H-type structure, since the support portion S that supports the piezoelectric piece 20 is provided, the support portion S and the base portion 2 also form an arcuate corner C. Become.

なお、前記のとおり、入隅部Cとは、凹んで形成されるコーナー部分(角部分)をいう。
この入隅部Cは、ドリルによる穿孔により円弧形状に設けられる。穿孔には、ドリル等を用いることができる。これにより、ランバート加工された結晶体に微少な貫通孔を穿孔することができる。
この穿孔によって圧電片20の入隅部Cに生じる残渣Nを減らすことができるようになっている。
In addition, as above-mentioned, the entrance corner part C means the corner part (corner part) formed concavely.
The corner C is provided in an arc shape by drilling with a drill . A drill or the like can be used for drilling. As a result, minute through holes can be drilled in the Lambertian processed crystal.
By this perforation, the residue N generated at the corner C of the piezoelectric piece 20 can be reduced.

これは、基部2と検出腕部3とで形成される円弧形状の入隅部Cと、基部2と励振腕部4とで形成される円弧形状の入隅部Cとをドリルで穿孔したことにより、圧電片20の入隅部Cとなる部分を穿孔した状態でウェットエッチングを行うと、エッチングレートの早い厚み方向が先に侵食され、その侵食された部分が穿孔した部分にまで達し、残渣Nが、基部2の側面と検出腕部3の側面とにつながらずに生じることとなり、また、基部2の側面と検出腕部3の側面とにつながらずに生じることとなる。この状態でウェットエッチングを続けると、基部2の側面に生じる残渣N、検出腕部3の側面に生じる残渣N、励振腕部4の側面に生じる残渣Nは、それぞれが隣り合う残渣に影響されずに侵食されることとなり、従来のように入隅部Cで侵食しきれなかった残渣Nを減少させることができる。
It shall be drilled and the inner corner portion C of the arc shape formed by the base 2 and the detection arm section 3, and a reentrant portion C of the arc shape formed by the base 2 and the excitation arm portion 4 in a drill Thus, when wet etching is performed in a state in which the portion to be the corner C of the piezoelectric piece 20 is perforated, the thickness direction with the fast etching rate is eroded first, and the eroded portion reaches the perforated portion, and the residue N is generated without being connected to the side surface of the base portion 2 and the side surface of the detection arm portion 3, and is generated without being connected to the side surface of the base portion 2 and the side surface of the detection arm portion 3. If wet etching is continued in this state, the residue N generated on the side surface of the base 2, the residue N generated on the side surface of the detection arm portion 3, and the residue N generated on the side surface of the excitation arm portion 4 are not affected by the adjacent residues. As a result, the residue N that could not be eroded at the entrance corner C as in the prior art can be reduced.

このように、本発明の第二の実施形態に係る圧電片20を構成したので、エッチング前に入隅部Cを穿孔したことで、この入隅部Cに生じる残渣Nを減少させることができる。   As described above, since the piezoelectric piece 20 according to the second embodiment of the present invention is configured, the residue N generated in the corner C can be reduced by drilling the corner C before etching. .

次に、本発明の第二の実施形態に係る圧電片20の圧電片形成方法について説明する。
本発明の第二の実施形態に係る圧電片20の圧電片形成方法は、第一の実施形態と同様に、穿孔工程、板状体整形工程、圧電片形成工程とからなる。
Next, a piezoelectric piece forming method of the piezoelectric piece 20 according to the second embodiment of the present invention will be described.
The piezoelectric piece forming method of the piezoelectric piece 20 according to the second embodiment of the present invention includes a drilling step, a plate-shaped body shaping step, and a piezoelectric piece forming step, as in the first embodiment.

(穿孔工程)
結晶育成装置(図示せず) により育成された結晶体を整形し、結晶体の主面において基部2と励振腕部4とで形成される円弧形状の入隅部Cとなる部分と、基部2と検出腕部4とで形成される円弧形状の入隅部Cとなる部分とをドリルで穿孔する。なお、基部2に支持部Sを設ける場合は、基部2と支持部Sとで形成される円弧形状の入隅部Cとなる部分もドリルで穿孔する。
(Punching process)
A crystal grown by a crystal growing device (not shown) is shaped, and a portion that becomes an arcuate corner C formed by the base 2 and the excitation arm 4 on the main surface of the crystal, and the base 2 And the detection arm portion 4 are used to drill a portion that becomes an arcuate corner portion C formed by a drill . In addition, when providing the support part S in the base 2, the part used as the circular arc shaped corner C formed by the base 2 and the support S is also drilled with a drill.

ここで、結晶育成装置によって形成された結晶体は、主面がZ面となるas−grownであって、育成した状態ではその表面が波打つように不均一となっており、この不均一な状態をランバート加工により均一にし表面を平坦に整形する。そして、例えば、最終的に設ける圧電片20の形状を記したマスクをランバート加工された結晶体に重ね、入隅部Cとなる部分をドリルで穿孔する。
Here, the crystal formed by the crystal growing apparatus is an as-grown whose main surface is a Z plane, and in the grown state, the surface is non-uniform so as to wave, and this non-uniform state Is made uniform by Lambert processing and the surface is shaped flat. Then, for example, a mask describing the shape of the piezoelectric piece 20 to be finally provided is overlaid on the Lambert-processed crystal body, and a portion to become the corner C is drilled with a drill.

(板状体整形工程)
穿孔された結晶体を該結晶体の主面と平行にスライスして板状体に整形する。
(Plate-shaped body shaping process)
The perforated crystal body is sliced parallel to the main surface of the crystal body and shaped into a plate-like body.

(圧電片形成工程)
板状体においてドリルで穿孔した部分が圧電片10の円弧形状の入隅部Cとなるように板状体に圧電片20を形成する。
(Piezoelectric piece forming process)
The piezoelectric piece 20 is formed on the plate-like body so that the portion drilled by the drill in the plate-like body becomes the arcuate corner C of the piezoelectric piece 10.

このように、本発明の第二の実施形態に係る圧電片20の圧電片形成方法を構成したので、入隅部Cに生じる残渣を減少させることができる。   Thus, since the piezoelectric piece formation method of the piezoelectric piece 20 which concerns on 2nd embodiment of this invention was comprised, the residue which arises in the corner C can be reduced.

このように形成される本発明の第二の実施形態に係る圧電片20の励振腕部4に励振用電極を形成し検出腕部3に検出用電極を形成して、例えば、慣性センサ素子に用いれば、圧電片20の形状が入隅部Cの部分で残渣Nによらず対称性を有しているので、残渣Nによる圧電片の形状の非対称性による振動バランスの悪化を防ぐことでスプリアスモードとの結合を防ぎ、温度特性が改善され、Q値を増加させる等の振動特性を良好にさせる慣性センサ素子とすることができる。   An excitation electrode is formed on the excitation arm portion 4 of the piezoelectric piece 20 according to the second embodiment of the present invention formed as described above, and a detection electrode is formed on the detection arm portion 3, for example, in an inertial sensor element. If used, the shape of the piezoelectric piece 20 is symmetric regardless of the residue N at the corner portion C. Therefore, the spurious can be prevented by preventing the vibration balance from deteriorating due to the asymmetry of the shape of the piezoelectric piece due to the residue N. The inertial sensor element that prevents the coupling with the mode, improves the temperature characteristics, and improves the vibration characteristics such as increasing the Q value can be obtained.

なお、変形例として、板状体整形工程を行った後に穿孔工程を行い、その後、ウェットエッチングを行う圧電片形成工程を行っても良い。
この場合、結晶体を所定の角度でスライスして板状体を形成することができる。
このようにすれば、各種振動モードに対応する圧電片を形成することができる。
このように構成しても、入隅部におけるエッチングレートの異なる結晶面が穿孔により消滅しているので、第二の実施形態と同様の効果を奏する。
As a modification, a piezoelectric piece forming step of performing a perforating step after performing a plate-shaped body shaping step and then performing wet etching may be performed.
In this case, the plate can be formed by slicing the crystal body at a predetermined angle.
In this way, piezoelectric pieces corresponding to various vibration modes can be formed.
Even if comprised in this way, since the crystal plane in which the etching rate in an entrance corner differs is annihilated by perforation, there exists an effect similar to 2nd embodiment.

以上、本発明の実施形態について説明したが、本発明は前記実施形態には限定されない。例えば、圧電片の形状は、三脚音叉構造の形状、王の字型構造の形状等、入隅部が形成される形状となっていれば、適宜、用いることができる。
また、圧電片の形状を形成する場合、穿孔した貫通孔を基準に圧電片の外形を画像認識装置を用いることもできる。例えば、貫通孔が設けられた板状体において、入隅部となる部分に設けられた複数の貫通孔から圧電片の外形形状を把握し、プロテクト膜、レジストを設けた後に、画像認識装置で把握させた圧電片の形状に沿っててマスクを重ね、露光させ、現像、ウェットエッチングを行うことにより圧電片の形状を形成しても良い。
As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment. For example, the shape of the piezoelectric piece can be appropriately used as long as it has a shape in which a corner is formed, such as a tripod tuning fork structure or a king-shaped structure.
Further, when forming the shape of the piezoelectric piece, an image recognition device can be used for the outer shape of the piezoelectric piece based on the perforated through hole. For example, in a plate-like body provided with a through-hole, the external shape of the piezoelectric piece is grasped from a plurality of through-holes provided in a portion serving as a corner, and a protective film and a resist are provided. A shape of the piezoelectric piece may be formed by overlaying a mask along the shape of the grasped piezoelectric piece, exposing the mask, developing, and performing wet etching.

本発明の第一の実施形態に係る圧電片の一例を示す平面図である。It is a top view which shows an example of the piezoelectric piece which concerns on 1st embodiment of this invention. 結晶体の一例を示す斜視図である。It is a perspective view which shows an example of a crystal body. 図2におけるA矢視方向から見た結晶体を穿孔した状態を示す平面図である。It is a top view which shows the state which pierced the crystal body seen from the A arrow direction in FIG. 整形した結晶体を板状体にした状態を示す図である。It is a figure which shows the state which made the shaped crystal body into a plate-shaped body. 板状体に圧電片を形成した状態の一例を示す図である。It is a figure which shows an example of the state which formed the piezoelectric piece in the plate-shaped object. 本発明の第二の実施形態に係る圧電片の一例を示す平面図である。It is a top view which shows an example of the piezoelectric piece which concerns on 2nd embodiment of this invention. 従来の圧電片の一例を示す平面図である。It is a top view which shows an example of the conventional piezoelectric piece.

符号の説明Explanation of symbols

10,20 圧電片
2 基部
3 検出腕部
4 励振腕部
C 入隅部
K1 結晶体
K2 板状体
N 残渣
10, 20 Piezoelectric piece 2 Base 3 Detection arm 4 Excitation arm C Corner corner K1 Crystal K2 Plate N N Residue

Claims (6)

基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片であって、
前記基部と前記検出腕部とで形成される円弧形状の入隅部と、前記検出腕部と前記励振腕部とで形成される円弧形状の入隅部とがドリルによる穿孔により形成されることを特徴とする圧電片。
Piezoelectric material made of a piezoelectric material having n-fold symmetry comprising a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions A piece,
And internal corner portion of an arc shape formed between the base portion and the detection arm section, the fact that the internal corner portion of the arc shape formed by the detection arm portion and the excitation arm portion is formed by drilling with a drill A piezoelectric piece characterized by
基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片であって、
前記基部と前記励振腕部とで形成される円弧形状の入隅部と、前記基部と前記検出腕部とで形成される円弧形状の入隅部とがドリルによる穿孔により形成されることを特徴とする圧電片。
A piezoelectric piece made of a piezoelectric material having n-fold symmetry comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases,
Characterized in that the internal corner portion of an arc shape formed between the base and the excitation arm portion, and the inner corner portion of an arc shape formed between the base and the detector arm portion is formed by drilling with a drill Piezoelectric piece.
基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、
結晶育成装置により育成された結晶体を整形し、前記結晶体の主面において前記振動片の前記基部と前記検出腕部とで形成される入隅部となる部分と、前記検出腕部と前記励振腕部とで形成される入隅部となる部分とを穿孔する穿孔工程と、
穿孔された前記結晶体を該結晶体の主面と平行にスライスして板状体に整形する板状体整形工程と、
前記板状体において前記穿孔した部分が前記圧電片の前記入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、
を備えることを特徴とする圧電片形成方法。
Piezoelectric material made of a piezoelectric material having n-fold symmetry comprising a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions A piezoelectric piece forming method for forming a piece,
A crystal grown by a crystal growing apparatus is shaped, and a portion to be a corner formed by the base portion and the detection arm portion of the vibrating piece on the main surface of the crystal body, the detection arm portion and the A drilling step of drilling a portion to be a corner formed by the excitation arm portion;
A plate-shaped body shaping step of slicing the perforated crystal body in parallel with the main surface of the crystal body to form a plate-like body;
A piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that the perforated portion of the plate-like body becomes the corner of the piezoelectric piece;
A method for forming a piezoelectric piece, comprising:
基部と該基部を中心に放射状に延出する複数の検出腕部と、隣り合う該検出腕部の端部と連結する複数の励振腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、
結晶育成装置により育成された結晶体の主面と平行又は所定の角度でスライスして板状体に整形する板状体整形工程と、
前記板状体の主面において前記基部と前記検出腕部とで形成される円弧形状の入隅部となる部分と、前記検出腕部と前記励振腕部とで形成される円弧形状の入隅部となる部分とをドリルで穿孔する穿孔工程と、
前記板状体において前記ドリルで穿孔した部分が前記圧電片の前記円弧形状の入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、
を備えることを特徴とする圧電片形成方法。
Piezoelectric material made of a piezoelectric material having n-fold symmetry comprising a base, a plurality of detection arm portions extending radially around the base portion, and a plurality of excitation arm portions connected to the ends of the adjacent detection arm portions A piezoelectric piece forming method for forming a piece,
A plate-shaped body shaping step of slicing and shaping into a plate-like body by slicing at a predetermined angle or parallel to the main surface of the crystal grown by the crystal growth apparatus;
Internal corner arc shape formed by the inner corner portion become part of the arc shape formed by the base and the detector arm portion and the main surface of the plate-like body, and the detection arm section and the excitation arm portion A drilling step of drilling a part to be a part with a drill ;
A piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that a portion of the plate-like body drilled by the drill becomes the arc-shaped corner of the piezoelectric piece;
A method for forming a piezoelectric piece, comprising:
基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、
結晶育成装置により育成された結晶体を整形し、前記結晶体の主面において前記基部と前記励振腕部とで形成される入隅部となる部分と、前記基部と前記検出腕部とで形成される入隅部となる部分とを穿孔する穿孔工程と、
穿孔された前記結晶体を該結晶体の主面と平行にスライスして板状体に整形する板状体整形工程と、
前記板状体において前記穿孔した部分が前記圧電片の前記入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、
を備えることを特徴とする圧電片形成方法。
A piezoelectric piece forming method for forming a piezoelectric piece made of a piezoelectric material having n-fold symmetry, comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases. ,
A crystal grown by a crystal growing apparatus is shaped and formed by a portion that becomes a corner portion formed by the base and the excitation arm on the main surface of the crystal, and the base and the detection arm. A drilling step for drilling a portion to be a corner to be entered,
A plate-shaped body shaping step of slicing the perforated crystal body in parallel with the main surface of the crystal body to form a plate-like body;
A piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that the perforated portion of the plate-like body becomes the corner of the piezoelectric piece;
A method for forming a piezoelectric piece, comprising:
基部と該基部の一方から延出する励振腕部と該基部の他方から延出する検出腕部とを備えるn回対称性を有する圧電材料からなる圧電片を形成する圧電片形成方法であって、
結晶育成装置により育成された結晶体の主面と平行又は所定の角度でスライスして板状体に整形する板状体整形工程と、
前記結晶体の主面において前記基部と前記励振腕部とで形成される円弧形状の入隅部となる部分と、前記基部と前記検出腕部とで形成される円弧形状の入隅部となる部分とをドリルで穿孔する穿孔工程と、
前記板状体において前記ドリルで穿孔した部分が前記圧電片の前記円弧形状の入隅部となるように前記板状体に前記圧電片を形成する圧電片形成工程と、
を備えることを特徴とする圧電片形成方法。
A piezoelectric piece forming method for forming a piezoelectric piece made of a piezoelectric material having n-fold symmetry, comprising a base, an excitation arm extending from one of the bases, and a detection arm extending from the other of the bases. ,
A plate-shaped body shaping step of slicing and shaping into a plate-like body by slicing at a predetermined angle or parallel to the main surface of the crystal grown by the crystal growth apparatus;
And the inner corner portion become part of the arc shape formed between said base and the excitation arm portion in the main surface of the crystal, the internal corner portion of an arc shape formed between the base portion and the detection arm section A drilling step of drilling a part with a drill ;
A piezoelectric piece forming step of forming the piezoelectric piece on the plate-like body so that a portion of the plate-like body drilled by the drill becomes the arc-shaped corner of the piezoelectric piece;
A method for forming a piezoelectric piece, comprising:
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