JP5196107B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5196107B2 JP5196107B2 JP2007086727A JP2007086727A JP5196107B2 JP 5196107 B2 JP5196107 B2 JP 5196107B2 JP 2007086727 A JP2007086727 A JP 2007086727A JP 2007086727 A JP2007086727 A JP 2007086727A JP 5196107 B2 JP5196107 B2 JP 5196107B2
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- light emitting
- lead
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- light
- emitting element
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- 239000000853 adhesive Substances 0.000 claims abstract description 34
- 230000001070 adhesive effect Effects 0.000 claims abstract description 34
- 230000001681 protective effect Effects 0.000 claims description 72
- 239000000463 material Substances 0.000 abstract description 19
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 13
- 238000007789 sealing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- WABPQHHGFIMREM-AHCXROLUSA-N lead-203 Chemical compound [203Pb] WABPQHHGFIMREM-AHCXROLUSA-N 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000010125 resin casting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
- Led Devices (AREA)
Description
本発明における発光素子は、半導体発光素子であり、発光ダイオードやレーザダイオード等を用いることができる。
保護素子は、過電圧、サージ電流等から発光素子を保護するものである。
接着部材は、はじめ液状ないしペースト状等の流動性を有し、熱や光等によって硬化する、ないしは加熱溶融後に硬化する材料で、保護素子または発光素子をリードに接合、載置するための部材である。その材料は、具体的には、エポキシやシリコーン等の樹脂、Au−Sn等の共晶、はんだ、低融点金属等を用いることができる。保護素子または発光素子の上下両面に電極が形成されている場合には、樹脂にAg、Au、Pd等の導電性部材を含有させたペースト、はんだ、共晶等の導電性の材料を用い、リードと導通をとることもできる。
第1および第2のリードは、発光素子と保護素子とを載置する機能ならびに発光装置外部と発光素子とを電気的に接続する機能を果たす。従ってこれらの機能を果たすことができるものであれば、その材料は特に限定されないが、熱伝導率の比較的大きな材料で形成することが好ましい。例えば、200W/(m・K)程度以上の熱伝導率を有しているもの、比較的大きい機械的強度を有するもの、あるいは打ち抜きプレス加工またはエッチング加工等が容易な材料が好ましい。例えば、Cu、Al、Au、Ag、W、Fe、Ni等の金属またはこれらの合金、燐青銅、Fe入りCu等あるいはこれらの表面にAg、Al、Cu、Au等のメッキが施されたもの等が挙げられる。
発光素子および保護素子は、ワイヤによって、各リードと電気的な接続を有している。
封止部材は、発光素子や保護素子等を外部から保護するために設けられる、透光性の部材である。封止部材は、発光素子、保護素子、ワイヤ、第1および第2のリードの一部を封止するよう、形成される。
透光性部材は、第1のリードに設けられた凹部内に充填され、発光素子を被覆する透光性の部材である。前述した封止部材と同じ材料であってもよいが、ワイヤにかかる応力を緩和し、ワイヤの断線を少なくするため、SiO2、TiO2等のフィラーを添加してもよい。
この実施例の発光装置110は、図1(a)に示すように、封止部材107の下方から第1のリード103および第2のリード104が突出するように構成された砲弾型の発光装置である。
本実施例の発光装置は、図2に示すように、第1のリード203に発光素子201および保護素子202が載置されている。第1のリード203に設けられた凹部内に発光素子201が載置されており、凹部の外に凹部の上端の面205dよりも低い、保護素子が載置される面205bを有している。保護素子202は、実施例1と同様に上下両面に電極を有し、Au−Su共晶の接着部材206により下面の電極と第1のリード203が電気的に接続され、上面の電極と第2のリード204の上面が、ワイヤによって接続されている。この場合でも、実施例1と同様に、接着部材の流れ出しを防止することができる。
本実施例の発光装置310は、図3に示すように、第1のリード303および第2のリード304は、金属板を屈曲して形成されている。凹部の上端の面305dおよび保護素子が載置される面305bは、第1のリード301の一部を屈曲して形成され、凹部の上端の面305dより低い保護素子が載置される面305bに、接着部材306を介して保護素子302が載置されるとともに、これらが封止部材307により一体に封止されている。
102、202、302 保護素子
103、203、303 第1のリード
104、204、304 第2のリード
105 段差
105a ワイヤが接続される面
105b、205b、305b 保護素子が載置される面
105c 隅部
205d、305d 凹部の上端の面
106、206、306 接着部材
107、307 封止部材
108 ワイヤ
110、310 発光装置
Claims (1)
- 第1のリードに載置される発光素子と、
第2のリードに接着部材を介して載置される保護素子と、
前記発光素子と前記第2のリードとを接続する第1のワイヤと、
前記保護素子と前記第1のリードとを接続する第2のワイヤと、を備えており、
前記第1のワイヤが接続される面と、前記保護素子が載置される面とは、前記第2のリードに設けられた段差による高低差を有し、
前記第1のワイヤが接続される面よりも低い面に前記保護素子が載置され、前記保護素子からの第2のワイヤの最も高い部分が、前記保護素子の真上に設けられ、
前記第2のリードに設けられた段差の高い面は、前記第1のリードに近接する側に設けられ、
前記段差の低い面、前記段差の高い面、前記発光素子が略直線上に配置されることを特徴とする発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007086727A JP5196107B2 (ja) | 2007-03-29 | 2007-03-29 | 発光装置 |
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JP2007086727A JP5196107B2 (ja) | 2007-03-29 | 2007-03-29 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2008244399A JP2008244399A (ja) | 2008-10-09 |
JP5196107B2 true JP5196107B2 (ja) | 2013-05-15 |
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JP2007086727A Active JP5196107B2 (ja) | 2007-03-29 | 2007-03-29 | 発光装置 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5206204B2 (ja) * | 2008-07-31 | 2013-06-12 | 日亜化学工業株式会社 | 発光装置 |
JP5930893B2 (ja) * | 2012-07-17 | 2016-06-08 | シチズンホールディングス株式会社 | 半導体発光装置の製造方法 |
TWI555996B (zh) * | 2014-09-22 | 2016-11-01 | Asahi Kasei Microdevices Corp | Hall sensor and lens module |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH045640U (ja) * | 1990-04-27 | 1992-01-20 | ||
JPH05175553A (ja) * | 1991-12-20 | 1993-07-13 | Sanyo Electric Co Ltd | 発光ダイオード装置 |
JP2914097B2 (ja) * | 1993-06-25 | 1999-06-28 | 松下電工株式会社 | 射出成形プリント基板 |
JPH09252080A (ja) * | 1996-03-15 | 1997-09-22 | Mitsubishi Electric Corp | 高周波集積回路 |
JP3437709B2 (ja) * | 1996-04-16 | 2003-08-18 | 株式会社東芝 | 立体配線型光結合装置及び反射型光結合装置 |
JP3764255B2 (ja) * | 1997-07-30 | 2006-04-05 | ローム株式会社 | 半導体発光素子 |
JP3559435B2 (ja) * | 1997-01-10 | 2004-09-02 | ローム株式会社 | 半導体発光素子 |
JP3708026B2 (ja) * | 2001-04-12 | 2005-10-19 | 豊田合成株式会社 | Ledランプ |
JP4407204B2 (ja) * | 2002-08-30 | 2010-02-03 | 日亜化学工業株式会社 | 発光装置 |
JP3972889B2 (ja) * | 2002-12-09 | 2007-09-05 | 日亜化学工業株式会社 | 発光装置およびそれを用いた面状光源 |
JP4661032B2 (ja) * | 2003-06-26 | 2011-03-30 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR100632002B1 (ko) * | 2005-08-02 | 2006-10-09 | 삼성전기주식회사 | 보호 소자를 포함하는 측면형 발광 다이오드 |
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