JP5155173B2 - 気化ゾーンへの粒子状材料の供給 - Google Patents
気化ゾーンへの粒子状材料の供給 Download PDFInfo
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- JP5155173B2 JP5155173B2 JP2008537742A JP2008537742A JP5155173B2 JP 5155173 B2 JP5155173 B2 JP 5155173B2 JP 2008537742 A JP2008537742 A JP 2008537742A JP 2008537742 A JP2008537742 A JP 2008537742A JP 5155173 B2 JP5155173 B2 JP 5155173B2
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わ表わし、そのアリール基は、構造式(C)に示したように、ジアリール置換されたアミノ基によって置換されている。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン部分またはアントラセン部分)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
6 蒸発源
7 蒸発源
8 蒸発源
9 気柱
10 気化装置
15 基板
20 マニホールド
30 開口部
40 供給装置
50 第1の容器
60 供給路
70 第2の容器
80 スクリュー構造
85 スクリュー
85a スクリュー
85b スクリュー
85c スクリュー
90 モータ
95 スクリュー構造
100 有機粒子状材料
105 スクリュー構造
110 スクリーン
115 螺旋状のネジ山
120 スクリーン
125 中央部
130 ピエゾ電気構造
135 山なし部分
140 ピエゾ電気構造
150 ピエゾ電気構造
155 ピエゾ電気構造
160 有機粒子状材料
170 加熱素子
180 基部
190 底部
210 回転する螺旋式装置
220 ギア・ドライバ
230 開口部
240 モータ
250 第3の容器
260 第1の供給路
265 第2の供給路
270 真空曝露用開口部
275 装着用ロック装置
280 蒸着チェンバー
285 OLED基板
295 並進移動装置
300 真空源
310 OLEDデバイス
320 基板
330 アノード
335 正孔注入層
340 正孔輸送層
350 発光層
355 電子輸送層
360 電子注入層
370 有機層
390 カソード
400 材料供給装置
402 カートリッジ・レシーバ
404 供給用カートリッジ
406 蒸気出力ポート
410 ヒーター
412 粉末カートリッジ
414 振動用スクリュー
420 供給路
422 供給用スクリュー
424 材料出力ポート
426 連結機構
430 モータ
432 留め具
434 キャビティ
436 スライド式バルブ
438 シール
440 振動チェンバー
442 シール
444 検出素子
Claims (2)
- 気化ゾーンを有する蒸着チェンバー(280)の中に粒子状材料(100,160)を供給してその粒子状材料を気化させて層を形成するためのカートリッジ(400)であって、
(a)カートリッジ・レシーバ(402)と;
(b)粒子状材料の汚染を防ぐために制御された環境下で粒子状材料(100,160)を受け取るキャビティを規定する密封された粉末カートリッジ(412)と;
(c)そのキャビティから粒子状材料(100,160)を振動チェンバー(440)の中に送り出し、そして振動された粒子状材料(100,160)を供給路(420)に沿って気化ゾーンまで連続的に計量する手段と;
(d)上記密封された粉末カートリッジ(412)と上記供給路(420)が供給用カートリッジ(404)を形成し;そして
(e)上記カートリッジ(400)を上記蒸着チェンバーに、または供給用カートリッジ(404)をカートリッジ・レシーバ(402)に、または密封された粉末カートリッジ(412)を供給用カートリッジ(404)に、取外し可能に固定する手段とを備えるカートリッジ。 - 上記カートリッジの中で粒子状材料を流動化する手段をさらに備える、請求項1に記載のカートリッジ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/264,349 US7993459B2 (en) | 2005-10-24 | 2005-10-24 | Delivering particulate material to a vaporization zone |
US11/264,349 | 2005-10-24 | ||
PCT/US2006/039756 WO2007050293A1 (en) | 2005-10-24 | 2006-10-11 | Delivering particulate material to a vaporization zone |
Publications (3)
Publication Number | Publication Date |
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JP2009512786A JP2009512786A (ja) | 2009-03-26 |
JP2009512786A5 JP2009512786A5 (ja) | 2009-05-07 |
JP5155173B2 true JP5155173B2 (ja) | 2013-02-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008537742A Active JP5155173B2 (ja) | 2005-10-24 | 2006-10-11 | 気化ゾーンへの粒子状材料の供給 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7993459B2 (ja) |
EP (1) | EP1966409B1 (ja) |
JP (1) | JP5155173B2 (ja) |
KR (1) | KR101196334B1 (ja) |
DE (1) | DE602006016863D1 (ja) |
TW (1) | TWI377714B (ja) |
WO (1) | WO2007050293A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7883583B2 (en) * | 2008-01-08 | 2011-02-08 | Global Oled Technology Llc | Vaporization apparatus with precise powder metering |
US8741062B2 (en) * | 2008-04-22 | 2014-06-03 | Picosun Oy | Apparatus and methods for deposition reactors |
US7972443B2 (en) * | 2008-11-14 | 2011-07-05 | Global Oled Technology Llc | Metering of particulate material and vaporization thereof |
US8062427B2 (en) * | 2008-11-14 | 2011-11-22 | Global Oled Technology Llc | Particulate material metering and vaporization |
US8048230B2 (en) | 2008-11-14 | 2011-11-01 | Global Oled Technology Llc | Metering and vaporizing particulate material |
JP2013503256A (ja) * | 2009-08-26 | 2013-01-31 | 株式会社テラセミコン | 蒸着ガス供給装置 |
KR101225377B1 (ko) * | 2012-04-02 | 2013-01-25 | 주식회사 야스 | 유기물질 카트리지 및 박막제작에 이를 사용하는 방법 |
DE102016111214B3 (de) * | 2016-06-20 | 2017-06-29 | Ancosys Gmbh | Vorrichtung zur Pulverdosierung für chemische Produktionsprozesse unter Reinraumbedingungen, Verwendung derselben und Zudosierungsverfahren |
CN107088150B (zh) * | 2017-05-01 | 2023-02-28 | 宁德职业技术学院 | 一种葡萄籽花青素蒸脸美容器 |
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US2524560A (en) * | 1945-09-22 | 1950-10-03 | Us Automatic Box Machinery Co | Method and machine for filling containers with powdered material and for removing dust and airborne particles at region ambient the container |
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EP0585848A1 (de) * | 1992-09-02 | 1994-03-09 | Hoechst Aktiengesellschaft | Verfahren und Vorrichtung zur chemischen Gasphasenabscheidung dünner Schichten |
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JP2000068055A (ja) | 1998-08-26 | 2000-03-03 | Tdk Corp | 有機el素子用蒸発源、この有機el素子用蒸発源を用いた有機el素子の製造装置および製造方法 |
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US7501152B2 (en) | 2004-09-21 | 2009-03-10 | Eastman Kodak Company | Delivering particulate material to a vaporization zone |
-
2005
- 2005-10-24 US US11/264,349 patent/US7993459B2/en active Active
-
2006
- 2006-10-11 WO PCT/US2006/039756 patent/WO2007050293A1/en active Application Filing
- 2006-10-11 EP EP06836266A patent/EP1966409B1/en active Active
- 2006-10-11 DE DE602006016863T patent/DE602006016863D1/de active Active
- 2006-10-11 JP JP2008537742A patent/JP5155173B2/ja active Active
- 2006-10-11 KR KR1020087009716A patent/KR101196334B1/ko active IP Right Grant
- 2006-10-23 TW TW095139040A patent/TWI377714B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200725959A (en) | 2007-07-01 |
DE602006016863D1 (de) | 2010-10-21 |
WO2007050293A1 (en) | 2007-05-03 |
TWI377714B (en) | 2012-11-21 |
US20070092645A1 (en) | 2007-04-26 |
JP2009512786A (ja) | 2009-03-26 |
KR101196334B1 (ko) | 2012-11-01 |
EP1966409A1 (en) | 2008-09-10 |
US7993459B2 (en) | 2011-08-09 |
EP1966409B1 (en) | 2010-09-08 |
KR20080059247A (ko) | 2008-06-26 |
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