JP5034494B2 - 接着剤組成物、回路接続用接着剤、接続体及び半導体装置 - Google Patents
接着剤組成物、回路接続用接着剤、接続体及び半導体装置 Download PDFInfo
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- JP5034494B2 JP5034494B2 JP2006352224A JP2006352224A JP5034494B2 JP 5034494 B2 JP5034494 B2 JP 5034494B2 JP 2006352224 A JP2006352224 A JP 2006352224A JP 2006352224 A JP2006352224 A JP 2006352224A JP 5034494 B2 JP5034494 B2 JP 5034494B2
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- JUIBLDFFVYKUAC-UHFFFAOYSA-N [5-(2-ethylhexanoylperoxy)-2,5-dimethylhexan-2-yl] 2-ethylhexaneperoxoate Chemical compound CCCCC(CC)C(=O)OOC(C)(C)CCC(C)(C)OOC(=O)C(CC)CCCC JUIBLDFFVYKUAC-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- GDOPTJXRTPNYNR-UHFFFAOYSA-N methyl-cyclopentane Natural products CC1CCCC1 GDOPTJXRTPNYNR-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- QNILTEGFHQSKFF-UHFFFAOYSA-N n-propan-2-ylprop-2-enamide Chemical compound CC(C)NC(=O)C=C QNILTEGFHQSKFF-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 125000005474 octanoate group Chemical group 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001610 polycaprolactone Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- OPQYOFWUFGEMRZ-UHFFFAOYSA-N tert-butyl 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOC(=O)C(C)(C)C OPQYOFWUFGEMRZ-UHFFFAOYSA-N 0.000 description 1
- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Description
本発明の接着剤組成物は、(a)熱可塑性樹脂と、(b)分子内に(メタ)アクリロイル基を2個以上有するラジカル重合性化合物と、(c)ラジカル重合開始剤と、(d)シクロペンタジエン、シクロペンタジエン単重合体、当該重合体の変性物、シクロペンタジエン及びこれと共重合可能なモノマーの共重合体、当該共重合体の変性物、並びに、テルペンのうちから選ばれる1種以上の流動性付与剤とを含有するものである。
使用機器:日立L−6000 型((株)日立製作所製、商品名)
検出器:L−3300RI((株)日立製作所製、商品名)
カラム:ゲルパックGL−R420+ゲルパックGL−R430+ゲルパックGL−R440(計3本)(日立化成工業(株)製、商品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:1.75ml/min。
(式(1)中、R1、R2及びR3はそれぞれ独立に、水素原子、炭素数1〜5のアルキル基、炭素数1〜5のアルコキシ基、炭素数1〜5のアルコキシカルボニル基、又はアリール基を示し、R4は水素原子又はメチル基を示し、n1は1〜10の整数を示す。)
次に、本発明の接続体の好適な実施形態について説明する。図1は、本発明の接続体の一実施形態を示す概略断面図である。図1に示すように、本実施形態の接続体1は、相互に対向する第1の回路部材20及び第2の回路部材30を備えており、第1の回路部材20と第2の回路部材30との間には、これらを電気的に接続する回路接続部材10が設けられている。第1の回路部材20は、第1の回路基板21と、回路基板21の主面21a上に形成される第1の回路電極22とを備えている。なお、回路基板21の主面21a上には、場合により絶縁層(図示せず)が形成されていてもよい。
次に、上述した接続体の製造方法について、その工程図である図2を参照にしつつ、説明する。
次に、本発明の半導体装置の実施形態について説明する。図3は、本発明の半導体装置の一実施形態を示す概略断面図である。図3に示すように、本実施形態の半導体装置2は、半導体素子50と、半導体の支持部材となる基板60とを備えており、半導体素子50及び基板60の間には、これらを電気的に接続する半導体素子接続部材80が設けられている。また、半導体素子接続部材80は基板60の主面60a上に積層され、半導体素子50は更にその半導体素子接続部材80上に積層されている。
次に、上述した半導体装置の製造方法について説明する。
子を対向する回路パターンと半導体素子の双方に接触させることが可能となり、回路パターンと半導体素子間の接続抵抗を十分に低減することができる。
(フェノキシ樹脂溶液の調製)
フェノキシ樹脂(商品名:PKHC、ユニオンカーバイド社製、重量平均分子量45000)40質量部を、ガラス製の容器に入れたメチルエチルケトン(商品名:2−ブタノン、和光純薬工業(株)製、純度99%)60質量部に溶解して、固形分40重量%のフェノキシ樹脂溶液を調製した。
ポリブチレンアジペートジオール(商品名、Aldrich社製、重量平均分子量2000)450質量部、ポリオキシテトラメチレングリコール(商品名、Aldrich社製、重量平均分子量2000)450質量部及び1,4−ブチレングリコール(商品名、Aldrich社製)100質量部を、メチルエチルケトン(商品名:2−ブタノン、和光純薬工業(株)製、純度99%)4000質量部中に溶解した。そこにジフェニルメタンジイソシアネート(商品名、Aldrich社製)390質量部を加えて反応液を得た。次に、その反応液を70℃で60分間反応させて、ウレタン樹脂を得た。なお、このときの温度制御はオイルバス(商品名:HOB−50D、アズワン(株)製)を用いて行った。得られたウレタン樹脂の重量平均分子量をゲルパーミエイションクロマトグラフィー法(GPC)によって測定したところ、10万であった。
ラジカル重合性化合物として、イソシアヌル酸EO変性ジアクリレート(商品名:M−215、東亞合成(株)製)及びウレタンアクリレート(商品名:AT−600、共栄社化学(株)製)をそれぞれ準備した。
ラジカル重合開始剤として、t−ヘキシルパーオキシ−2−エチルヘキサノエート(商品名:パーヘキシルO、日本油脂(株)製)を準備した。
流動性付与剤として、シクロペンタジエン重合体(商品名:クイントン1700、日本ゼオン(株)製、重量平均分子量380、水酸基価220mgKOH/g)、シクロペンタジエン重合体(商品名:クイントン1500、日本ゼオン(株)製、重量平均分子量480、水酸基価0mgKOH/g)、下記一般式(3)で示されるロジンエポキシ化合物(商品名:ビームセット101、荒川化学工業(株)製、単官能エポキシアクリレート誘導体)、及び、脂肪族炭化水素重合体(商品名:クイントンA100、日本ゼオン(株)製、重量平均分子量1350、水酸基価0mgKOH/g)をそれぞれ準備した。
ポリスチレン粒子の表面上に、厚さ0.2μmになるようにニッケルからなる層を設け
、更にこのニッケルからなる層の表面上に、厚さ0.02μmになるよう金からなる層を
設けた。こうして平均粒径4μm及び比重2.5の導電性粒子を作製した。
(実施例1)
熱可塑性樹脂として上記フェノキシ樹脂溶液及び上記ウレタン樹脂、ラジカル重合性化合物としてM−215及びAT−600、ラジカル重合開始剤としてパーヘキシルO、並びに、流動性付与剤としてクイントン1700を表1に示す配合割合(固形質量比)で混合した。この混合物に、上記の導電性粒子を配合分散させて接着剤組成物を得た。導電性粒子の配合割合は、接着剤組成物の全量に対して1.5体積%(熱可塑性樹脂100質量部に対して10質量部)とした。
流動性付与剤として、クイントン1700に代えてビームセット101を10質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
流動性付与剤として、クイントン1700に代えてクイントン1500を10質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
流動性付与剤を配合しなかったこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
流動性付与剤として、クイントン1700に代えてクイントンA100を10質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
ライン幅25μm、ピッチ50μm及び厚み18μmの銅配線を500本有するフレキシブル回路板(FPC)と、0.2μmの酸化インジウム(ITO)の薄層を全面に形成したガラス基板(厚み1.1mm、表面抵抗20Ω/□)との間に、上記で得られたフィルム状回路接続用接着剤を配置した。次に、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング(株)製)を用いて、160℃、3MPaの条件下、それらの積層方向に10秒間の加熱加圧を行った。こうして、幅2mmにわたりFPC基板とITO基板とを実施例1〜3、比較例1又は2の回路接続用接着剤の硬化物により電気的に接続した接続体をそれぞれ作製した。
得られた接続体の対向する電極間の接続抵抗をマルチメータ(商品名:TR6848、アドバンテスト社製)で測定した。なお、抵抗値は、対向する電極間の抵抗150点の平均(x+3σ)で示した。
得られた接続体の部材間(フレキシブル回路板及びガラス基板間)の接着強度を、JIS−Z0237に準じて90度剥離法で測定し、評価した。ここで、接着強度の測定は、テンシロンUTM−4(商品名、東洋ボールドウィン(株)製)を使用し、剥離速度50mm/min、25℃の条件で行った。
Claims (6)
- (a)熱可塑性樹脂と、
(b)分子内に(メタ)アクリロイル基を2個以上有するラジカル重合性化合物と、
(c)ラジカル重合開始剤と、
(d)シクロペンタジエン重合体の変性物、シクロペンタジエン及びこれと共重合可能なモノマーの共重合体、当該共重合体の変性物、並びに、テルペンのうちから選ばれる1種以上の流動性付与剤と、
を含有し、
前記流動性付与剤が水酸基を有する、接着剤組成物。 - 前記熱可塑性樹脂100質量部に対して、前記ラジカル重合性化合物50〜250質量部、前記ラジカル重合開始剤0.05〜30質量部及び前記流動性付与剤1〜20質量部を含有する、請求項1記載の接着剤組成物。
- 前記熱可塑性樹脂100質量部に対して、導電性粒子0.5〜30質量部を更に含有する、請求項1又は2に記載の接着剤組成物。
- 相対向する回路電極を有する回路部材間に介在させ、前記相対向する回路電極同士が電気的に接続されるように前記回路部材同士を接着するために用いられる、請求項1〜3のうちのいずれか一項に記載の接着剤組成物からなる回路接続用接着剤。
- 対向配置された一対の回路部材と、
前記一対の回路部材の間に設けられ、前記一対の回路部材が有する回路電極同士が電気的に接続されるように回路部材同士を接着する接続部材と、
を備え、
前記接続部材が、請求項4に記載の回路接続用接着剤の硬化物からなる、接続体。 - 半導体素子と、
前記半導体素子を搭載する基板と、
前記半導体素子及び前記基板間に設けられ、前記半導体素子及び前記基板を電気的に接続するとともに接着する接続部材と、
を備え、
前記接続部材が、請求項1〜3のうちのいずれか一項に記載の接着剤組成物の硬化物である、半導体装置。
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