JP4576480B1 - Multilayer wiring board - Google Patents

Abstract

Provided is a multilayer wiring board that does not include a core board that can be reduced in thickness while suppressing warping of the board.
[Solution] A central wiring layer 20 disposed in the center of the substrate in the thickness direction, and wiring layers 21 and 22 laminated on one side and the other side sandwiching the central wiring layer 20 via insulating layers 31 and 32; The wiring layer 21 on one side of the central wiring layer 20 and the wiring layer 22 on the other side are provided in the same number of layers, and the insulating layer 31 on one side of the central wiring layer 20 and the other The central wiring layer 20 has a wiring pattern and a dummy pattern 20a, and a dummy pattern 20a is formed in an airspace portion where the wiring pattern is not arranged. It is characterized by being.
[Selection] FIG.

Description

  The present invention relates to a multilayer wiring board having a warp prevention structure.

  As a wiring board on which a semiconductor element is mounted, a multilayer wiring board in which wiring layers are formed on both surfaces of a core substrate is widely used. In recent years, multilayer wiring boards that do not include a core board have been provided along with the reduction in thickness of multilayer wiring boards and the increase in the density of wiring patterns. A multilayer wiring board that does not include this core substrate is advantageous in that it can be easily thinned and a wiring pattern can be formed at a high density.

  However, a multilayer wiring board that does not include a core substrate tends to warp because the strength of the substrate itself is inferior to that of a multilayer wiring board that includes a core substrate. For this reason, an insulating layer is formed using an insulating material in which a reinforcing material such as glass cloth is mixed in a resin material such as epoxy, and the warp of the substrate is suppressed by increasing the strength of the substrate, or the core layer is sandwiched. A method of suppressing the warpage of the substrate by making the pattern of the wiring layer (including vias) arranged in (1) symmetrically arranged is proposed (see Patent Document 4).

JP 2000-323613 A JP 2004-356219 A Japanese Patent Laid-Open No. 2005-236067 JP 2007-81157 A

In an actual multilayer wiring board, the wiring pattern formed in the wiring layer and the arrangement of conductor parts such as vias vary in each layer. As described above, the arrangement of the conductor portions in each layer is not uniform, so that the warp direction (upwardly convex, downwardly convex, etc.) and the amount of warp of the substrate are slightly different. In particular, in a multilayer wiring board that does not include a core substrate, since the strength of the substrate itself is insufficient, a problem that the substrate warps due to a difference in the balance of the shrinkage of the insulating layer or the like is likely to occur.
The present application provides a multilayer wiring board having a structure for solving these problems and not including a core substrate.

In order to achieve the above object, the present invention comprises the following arrangement.
That is, a central wiring layer disposed in the center in the thickness direction of the substrate, and a wiring layer laminated on one side and the other side sandwiching the central wiring layer via an insulating layer, The wiring layer on the one side of the wiring layer and the wiring layer on the other side are provided in the same number of layers, and the insulating layer on the one side of the central wiring layer and the insulating layer on the other side The layers are provided in the same number of layers, and the thicknesses of the insulating layers on the one side and the other side sandwiching the central wiring layer at symmetrical positions sandwiching the central wiring layer are formed to have an equal thickness. The wiring layer including the central wiring layer is electrically connected through a via, and the via on one side of the central wiring layer and the via on the other side are wide on the side toward the central wiring layer. It has a narrow trapezoidal cross-sectional shape and is formed in a symmetrical orientation. And, wherein said airspace portion on which a wiring pattern is not disposed and the dummy pattern is formed, the semiconductor element mounting surface said one side of the central wiring layer is formed, the insulating layer of the one side of the central wiring layer Then, the number of vias is formed more than the insulating layer on the other side, and the insulating layer on one side and the other side sandwiching the central wiring layer is located symmetrically with respect to the central wiring layer. The stress caused by the insulating layer on one side and the other side is formed so as to be non-uniform, and the conductors are non-uniformly distributed in the wiring layer on one side and the other side sandwiching the central wiring layer The generated stress is canceled out by the insulating layer, and the substrate is planarized .

The central wiring layer having the wiring pattern and the dummy pattern is characterized in that conductors are uniformly arranged as a whole in a planar region.
Further, the central wiring layer is formed thicker than other wiring layers.
Further, the insulating layer on the one side and the insulating layer on the other side are formed of the same material.

Also, characterized in that said insulating layer of said one side of the central wiring layer and one of said opposite sides of the insulating layer are different unbalanced layers of any of the stress insulation layer to the other insulating layer And
In addition, an insulating layer on one side and the other side sandwiching the central wiring layer at a symmetrical position sandwiching the central wiring layer is formed of different kinds of insulating materials, and one side and the other side of the central wiring layer The stress caused by the insulating layer in is uneven.

Further, the insulating layer on one side sandwiching the central wiring layer is formed of a resin material mixed with a reinforcing material, and the insulating layer on the other side is formed of a resin material not mixed with a reinforcing material. Features .

In addition, the insulating layer at a symmetrical position across the central wiring layer is formed of a resin material mixed with a reinforcing material.
In addition, an insulating layer adjacent to the central wiring layer is formed of a resin material mixed with a reinforcing material, and an insulating layer outside the insulating layer is formed of a resin material not mixed with a reinforcing material. It is characterized by being.

  ADVANTAGE OF THE INVENTION According to this invention, the stress in one side and the other side which pinches | interposes a center wiring layer can be equalized, the multilayer wiring board which reduced the board | substrate and suppressed the curvature of the board | substrate can be provided.

It is sectional drawing which shows the structure of 1st Embodiment of a multilayer wiring board. It is a top view of a multilayer wiring board. It is sectional drawing which shows the structure of other embodiment of a multilayer wiring board. It is sectional drawing which shows the structure of other embodiment of a multilayer wiring board. It is sectional drawing which shows the structure of 2nd Embodiment of a multilayer wiring board. It is sectional drawing which shows the structure of other embodiment of a multilayer wiring board. It is explanatory drawing which shows the manufacturing process of a multilayer wiring board. It is explanatory drawing which shows the manufacturing process of a multilayer wiring board. It is explanatory drawing which shows the manufacturing process of a multilayer wiring board.

(Multilayer wiring board: First embodiment)
Hereinafter, a first embodiment of a multilayer wiring board according to the present invention will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view showing a configuration of a first embodiment of a multilayer wiring board. In the multilayer wiring board 10 of the present embodiment, the first, second, third, and fourth wiring layers 21, 22, 23, and 24 are provided on both sides of the central wiring layer 20 disposed in the center in the thickness direction of the board. The insulating layers 31, 32, 33, and 34 are interposed between the wiring layers to be stacked. The multilayer wiring board 10 is a multilayer wiring board that includes four insulating layers and five wiring layers and does not have a core substrate.

In FIG. 1, a pad 23a for connecting a semiconductor element mounted on the multilayer wiring substrate 10 is formed on the third wiring layer 23, and a pad for connecting an external connection terminal such as a solder ball is formed on the fourth wiring layer. 24a is formed.
The wiring layers adjacent via the insulating layers 31 to 34 are electrically connected via the via 25. In the wiring layers 20 to 24, a wiring pattern is formed based on a predetermined design, and vias 25 are provided at appropriate positions so that the wiring patterns are electrically connected between the layers.
The surface of the multilayer wiring board 10 where the semiconductor element mounting surface and the external connection terminal are joined is covered and protected by protective films 36 and 38 such as solder resist, except for the portions where the pads 23a and 24a are formed.

  FIG. 2 is a plan view of the multilayer wiring board 10 as viewed from the semiconductor element mounting surface side. On the semiconductor element mounting surface of the multilayer wiring substrate 10, a semiconductor element mounting area A is provided in the center, and pads 23 a are provided in a lattice arrangement in the semiconductor element mounting area A. A pad 16 used for wire bonding connection is provided on the periphery of the semiconductor element mounting region A. The arrangement of the pads 23a and the like of the multilayer wiring board 10 varies depending on the product, and FIG. 2 shows an example of the arrangement of the pads 23a and the like.

One feature of the multilayer wiring board 10 is that wiring layers and insulating layers are provided in the same number of layers on both sides of the central wiring layer 20.
In the present embodiment, two wiring layers (first wiring layer 21 and third wiring layer 23) are provided on one side (side on which a semiconductor element is mounted) of the central wiring layer 20, and the other side ( Similarly, two wiring layers (second wiring layer 22 and fourth wiring layer 24) are provided on the side where the external connection terminals are joined. In addition, two insulating layers 31 and 33 are provided on one side of the central wiring layer 20, and two insulating layers 32 and 34 are provided on the other side.

Among the insulating layers 31 to 34, the thickness of the inner insulating layers 31 and 32 is set so that the insulating layer 31 is thinner than the insulating layer 32. This is because the central wiring layer 20 is buried in the (lower) insulating layer 32 in the manufacturing process, so that the thickness portion of the insulating layer 32 excluding the thickness of the central wiring layer 20 (in the drawing) This is because the thickness T) matches the thickness of the (upper) insulating layer 31.
Since the insulating layer 31 and the insulating layer 32 are integrated by hot pressing, if the thickness of the insulating layer 31 and the insulating layer 32 is made common in the portion excluding the thickness of the central wiring layer 20, the central wiring layer 20 is insulated. The insulating layer composed of the layer 31 and the insulating layer 32 is disposed at the center position (center position) in the thickness direction. That is, the central wiring layer 20 is arranged to be sandwiched and balanced between the insulating layer 31 and the insulating layer 32.

As described above, a multilayer wiring board that does not include a core board has a problem that the board is likely to warp. The reason why the thicknesses of the insulating layers 31 and 32 disposed on both sides of the central wiring layer 20 in the thickness direction are set in common is to equalize (balance) the characteristics related to the warp of the substrate as much as possible, and to provide a multilayer wiring board. This is to reduce the effect of acting on the warp.
In the present embodiment, the insulating layers 33 and 34 stacked on the insulating layers 31 and 32 also have the same thickness and the insulating layers 31 and 33 on one side arranged with the central wiring layer 20 interposed therebetween. The thicknesses of the insulating layers 32 and 34 on the other side are made common as a whole, and the thicknesses of the insulating layers 31 to 34 are balanced.

For the insulating layers 31 to 34, a build-up resin material, a resin material mixed with a reinforcing material such as glass cloth, or the like can be used. In the present embodiment, an epoxy resin containing glass cloth is used as a resin material for forming the inner insulating layers 31 and 32, and an epoxy resin not containing glass cloth is used for the outer insulating layers 33 and 34. .
The use of epoxy resin with glass cloth for the inner insulating layers 31 and 32 is to increase the strength of the inner insulating layers 31 and 32 to ensure the strength of the entire multilayer wiring board 10 and to warp the substrate. This is to suppress the problem. As the resin material that increases the strength of the insulating layer, a reinforcing material that is mixed with glass cloth (woven fabric), glass nonwoven fabric, aramid nonwoven fabric, liquid crystal polymer nonwoven fabric, or the like can be used. As the resin component, BT resin or the like is used in addition to the epoxy resin.

  Resin material with glass cloth has a large reinforcing effect compared to resin material that does not contain reinforcing materials such as build-up resin, while forming via holes at high density and wiring at fine pitch Not suitable for The wiring pattern formed in the inner insulating layers 31 and 32 of the multilayer wiring board 10 is wider than the wiring pattern formed in the outer layer of the multilayer wiring board 10 (particularly on the surface on which the semiconductor element is mounted). Since the wiring density is also reduced, the use of a resin material containing glass cloth for the inner insulating layer has the advantage that there are few problems in the manufacturing process for forming the wiring pattern.

On the other hand, since the wiring pattern is arranged at a higher density in the outer layer of the multilayer wiring board 10 than in the inner layer, a resin material that does not include glass cloth is used for the insulating layer 33 on the side where the semiconductor element is mounted. It is preferable to enable density wiring. The insulating layer 34 on the side where the external connection terminals are formed is also formed of the same resin material as that of the insulating layer 33 from the balance of the insulating layers.
Thus, according to the multilayer wiring substrate 10 of the present embodiment, it is possible to form wiring patterns with high density, and it is possible to improve the strength of the substrate and suppress warping of the substrate.

In addition, all of the insulating layers 31 to 34 of the multilayer wiring board 10 are formed of a resin material including a reinforcing material such as glass cloth, or all of the insulating layers 31 to 34 are formed of a resin material not including a reinforcing material. Thus, it is possible to form all the insulating layers using the same resin material. It is also possible to use an insulating layer formed of a resin material containing a reinforcing material as the insulating layer on the outer layer side of the substrate. Also in this case, the insulating layer containing the reinforcing material is applied to the insulating layer in the symmetrical position with the central wiring layer 20 sandwiched between the one side and the other side sandwiching the central wiring layer 20, and the insulating layer as a whole substrate It is better to balance the arrangement of
In the case of a multilayer structure with 6 or more insulating layers and wiring layers, it is possible to form a layer structure using not only one or two types of resin materials but also three or more types of resin materials having different materials such as strength. It is. Even in such a case, it is preferable to configure the substrate by selecting resin materials so that the entire substrate is evenly balanced.

  Another feature of the multilayer wiring board 10 of the present embodiment is that the cross-sectional shape of the via 25 formed in the insulating layers 31 to 34 on both sides of the central wiring layer 20 is the shape on one side of the central wiring layer 20. The other side is formed so as to be symmetrical. As shown in FIG. 1, the via 25 has a trapezoidal cross section. In the multilayer wiring substrate 10, the via 25 on the upper side (the surface on which the semiconductor element is mounted) across the central wiring layer 20 is formed in a so-called inverted trapezoidal shape in which the upper base is longer than the lower base. On the other hand, the via 25 formed on the lower side (surface side to which the external connection terminal is joined) across the central wiring layer 20 has a so-called trapezoidal shape in which the upper base is shorter than the lower base.

  As described above, the via 25 formed in the insulating layers 31 and 33 on one side and the via 25 formed in the insulating layers 32 and 34 on the other side are symmetric with respect to the central wiring layer 20. By forming 25, the warp of the substrate caused by the asymmetric shape (cross-sectional shape) of the via 25 on one side and the other side sandwiching the central wiring layer 20 can be suppressed, and the substrate can be planarized. it can.

The wiring pattern of the wiring layer 20 to 24 to be formed on the multilayer wiring substrate 10, except in the case of special design, usually is not intended to be completely symmetrical arrangement across the central wiring layer 20, the insulating layer 31 to The arrangement positions of the vias 25 formed in 34 are also different for each layer. As described above, the conductor portions (wiring patterns, vias) in the multilayer wiring board 10 are arranged out of the completely uniform arrangement with the central wiring layer 20 in between. Making the shape symmetric with respect to the central wiring layer 20 contributes to the effect of balancing the conductor portion, and can suppress the warpage generated in the multilayer wiring board 10.

  In addition, the thickness of the wiring pattern formed in each wiring layer 20-24 is about 5-15 micrometers, and the height of a via part is about 40 micrometers. The total thickness of the multilayer wiring board 10 in which the insulating layer of the present embodiment has a four-layer structure is about 250 μm. The thickness of the insulating layer and the thickness of the wiring pattern can be set as appropriate, and the number of wiring layers and insulating layers in the multilayer wiring board can be arbitrarily set. The overall thickness of the multilayer wiring board will vary.

(Examples of other multilayer wiring boards)
In the multilayer wiring board 10 shown in FIG. 1, the via 25 is formed as a filled via. FIG. 3 shows an example of a multilayer wiring board 11 in which wiring layers are electrically connected by a via 26 having an opening at the upper part (side having a larger diameter) of the via.
Matching the number of wiring layers 21 and 23 and insulating layers 31 and 32 on one side across the central wiring layer 20 with the number of wiring layers 22 and 24 and insulating layers 31 and 33 on the other side; The thicknesses of the insulating layers 31 and 33 on one side and the insulating layers 32 and 34 on the other side are formed uniformly in the thickness direction with respect to the central wiring layer 20 as in the above embodiment. . The multilayer wiring board 11 in the illustrated example is formed so that the inner insulating layers 31 and 32 are formed of an epoxy resin containing glass cloth so that the multilayer wiring board 11 has a required strength.

In the multilayer wiring boards 10 and 11, except for the central wiring layer 20, the wiring layers and the insulating layers arranged on both sides of the central wiring layer 20 are two layers and two layers, respectively, for a total of four layers. Even when the wiring layer and the insulating layer are formed in multiple layers, the number of the wiring layers arranged on one side of the central wiring layer 20 and the number of insulating layers, the number of the wiring layers arranged on the other side, and the insulating layers are set to be the same. To do. For example, the wiring layer and the insulating layer on one side and the other side sandwiching the central wiring layer 20 are respectively composed of 3 layers-3 layers (6 layers in total), 4 layers-4 layers (8 layers in total), 5 layers-5 layers ( 10 layers in total).
Thus, by matching the number of wiring layers on one side and the other side sandwiching the central wiring layer 20 and the number of insulating layers, it is possible to balance the stress on one side and the other side of the multilayer wiring substrate. Can be suppressed. Further, by forming the multilayer wiring board in a multilayer, it is possible to improve the strength of the multilayer wiring board as a whole, so that it is also possible to suppress warping of the multilayer wiring board.

FIG. 4 shows an example of the multilayer wiring board 12 in which insulating layers 31 and 32 are formed on both sides of the central wiring layer 20, and the wiring layers 21 and 22 are formed on the insulating layers 31 and 32. The multilayer wiring board 12 includes three wiring layers including the central wiring layer 20 and two insulating layers, and is an example in which the number of wiring layers and insulating layers is minimized.
The thickness of the insulating layers 31 and 32 is made common (thickness T) with the central wiring layer 20 as a reference, and the central wiring layer 20 and the wiring layers 21 and 22 are electrically connected via the via 25. This is the same as in the above-described embodiments.

In the multilayer wiring board 12 of this embodiment, since the number of wiring layers and insulating layers is small, the strength of the board is lower than that of a multilayer wiring board formed in more layers, and the board may be easily warped. . For this problem, it is effective to form the insulating layers 31 and 32 from a resin material having a certain strength (shape retention) such as an epoxy resin containing glass cloth, and to ensure the required strength. is there.
In addition to the function as a wiring pattern disposed in the middle of the wiring layers 21 and 22 in the central wiring layer 20 disposed in the center in the thickness direction of the substrate, a reinforcing action (shape retaining action) for preventing the board from warping. ) Is also effective in suppressing the warpage of the substrate.

  When the central wiring layer 20 is used only as a function as a wiring pattern, it is sufficient if the thickness of the conductor layer is about 10 μm. When the central wiring layer 20 is also used for reinforcing a substrate, the thickness of the central wiring layer 20 is increased to about 30 μm. When the thickness of the conductor layer is increased, the arrangement interval of the wiring pattern is restricted from being narrowed. Therefore, the thickness is set in consideration of the pattern interval of the wiring pattern formed in the central wiring layer 20.

Further, when a wiring pattern is formed in the central wiring layer 20, if a relatively wide airspace portion where the wiring pattern is not formed is generated, a dummy pattern 20a is formed in the airspace portion, and the plane of the central wiring layer 20 is formed. In the region, it is preferable that the conductors are evenly arranged (distributed) as a whole. By designing the arrangement of the conductors in the central wiring layer 20 in this way, the warpage of the central wiring layer 20 itself can be suppressed, and the action of suppressing the warpage of the substrate by the central wiring layer 20 can be effectively exhibited. . The dummy pattern 20a can be used as a ground pattern or the like.
The method of providing the central wiring layer 20 with a shape retaining function for suppressing warpage of the substrate is not limited to the case where the insulating layer is formed in two layers, but can be applied to a multilayer wiring substrate in which insulating layers are formed in more layers.

(Multilayer wiring board: Second embodiment)
FIG. 5 shows the configuration of the second embodiment of the multilayer wiring board. Also in the multilayer wiring board 13 of the present embodiment, the wiring layers 21 and 23 and the insulating layers 31 and 33 are provided on one side across the central wiring layer 20, and the wiring layers 22 and 24 and the insulating layers 32 and 34 are provided on the other side. The configuration provided with is the same as that of the multilayer wiring board 10 shown in FIG.
Further, the same resin material is used for the inner insulating layers 31 and 32 as in the first embodiment, but the characteristic configuration of the multilayer wiring board 13 of the present embodiment is that of the inner layer. In the insulating layers 31 and 32, the thickness of the insulating layer 32 on the other side is made larger than the thickness of the insulating layer 31, and the thickness of the insulating layer is positively made different. In FIG. 5, the insulating layer 31 and the insulating layer 32 are formed so that T1> T, where T is the thickness of the insulating layer on one side of the central wiring layer 20 and T1 is the thickness of the other side.

  The reason why the thickness of the insulating layer 32 on the other side arranged with the central wiring layer 20 interposed therebetween is made thicker than the thickness of the insulating layer 31 on one side is that one side and the other side of the central wiring layer 20 are The stress balance caused by the insulating layers 31 and 33 and the insulating layers 32 and 34 is positively made unbalanced, and the warping stress caused by the insulating layers 31 to 34 is utilized to It is to suppress the warpage as a whole.

  As described above, the layout of the wiring pattern and via formed in the wiring layer of the multilayer wiring board is not completely the same in each layer, and all the conductor portions formed on the multilayer wiring board and remaining on the board are The layers are not completely evenly distributed. For this reason, even if the insulating layer on one side and the other side of the central wiring layer is formed with a balance of thickness and material, it is caused by stress caused by the distribution of the conductor portion of the substrate not being perfectly balanced. As a result, the substrate warps.

  In the present embodiment, the thickness of the insulating layer 32 is set to be greater than the thickness of the insulating layer 31 and the stress balance caused by the insulating layers 31 to 34 is set to be uneven. This is to cancel the stress caused by the imbalance of the distribution of the 13 conductors and to suppress the warpage of the multilayer wiring board 13 as a whole.

In general, the wiring pattern on the side where the semiconductor element is mounted (one side of the central wiring layer 20) has a higher density than the wiring pattern on the side where the external connection terminals are joined (the other side of the central wiring layer). As a result, the multilayer wiring board warps so that the side on which the semiconductor element is mounted is convex downward or convex upward (when the thickness of the insulating layer is balanced). The warping direction of the substrate is not unconditionally determined by the arrangement of the conductors and the characteristics of the insulating layer.
If the distribution of the conductor portion is made uniform, the insulating layer itself can be seen by increasing the thickness of the insulating layer on the side where the external connection terminals are joined, or by increasing the thickness of the insulating layer on the side where the semiconductor element is mounted. For example, it can be warped so as to be convex upward or convex downward.

Therefore, the warpage caused by the unbalanced distribution of the conductor portions of the multilayer wiring board 13 is canceled by using the stress generated by making the thickness of the insulating layer uneven, thereby providing the multilayer wiring board 13. It is possible to suppress warping as a whole. The multilayer wiring board 13 shown in FIG. 5 is an example in which the thickness of the insulating layer is set in consideration of the distribution of the conductor portion, the warpage is suppressed as a whole of the multilayer wiring board 13, and the board is flattened. .
The layout of wiring patterns and vias in a multilayer wiring board varies depending on the product, and the amount of warping due to the distribution of conductors in the multilayer wiring board varies. Design to minimize warpage of the entire wiring board.

FIG. 6 shows a method for unbalancing the stress caused by the insulating layers 31 to 34, without changing the thickness of the inner insulating layers 31 and 32, and insulating by a resin material different from the resin material used for the insulating layer 31. 2 is an example of a multilayer wiring board 14 including a layer 32. FIG. The multilayer wiring board 14 is formed by a method in which, for example, an epoxy resin not containing glass cloth is used for the insulating layer 31 and an epoxy resin containing glass cloth is used for the insulating layer 32.
As described above, the stress generated from the insulating layers 31 to 34 itself can be unbalanced even by a method using resin materials of different materials (elastic coefficient, thermal expansion coefficient) as the insulating layers 31 and 32. the stress due to 34 to take advantage can be designed to suppress the warp of the entire multilayer wiring substrate 13.

The multilayer wiring board 13 includes four insulating layers 31 to 34. The method of positively generating warpage due to the insulating layers 31 to 34 by changing the thickness of the insulating layer or changing the material of the insulating layer is not limited to the case of applying to the inner insulating layers 31 and 32. Absent.
For example, all the insulating layers 31 to 34 may have different thicknesses from other layers, or may be made of different materials. In addition, it is possible to change both the thickness and material of a specific insulating layer, or to change the thickness of a specific insulating layer from that of other insulating layers. A combination of the resin material and the thickness may be set and configured such that the insulating layer is formed of a material different from that of the insulating layer.

  The insulating layer in the multilayer wiring board can be formed in a multilayer of 6 layers or more. In the case of such a multi-layered substrate, the method of selecting the thickness and material of the insulating layer and actively using the warping stress of the insulating layer itself can be designed in various combinations. As a method for suppressing the warpage of the substrate, it is possible to suppress the warpage of the substrate by taking appropriate measures.

(Manufacturing method of multilayer wiring board)
FIG. 7 shows a method for manufacturing the multilayer wiring board 10 shown in FIG.
FIG. 7A shows a state in which the laminated body 40 in which the copper foil 44 is attached via the insulating layer 42 is formed on the surface of the metal foil 41 with carrier 41 on which the metal foil 41b is attached. The laminated body 40 is formed on the metal foil 41b of the metal foil with carrier 41 by heating and pressurizing the copper foil 44 through a semi-cured thermosetting resin film. The thermosetting resin film is thermoset by thermocompression bonding to form the insulating layer 42.

The copper foil 44 is patterned into a predetermined pattern in a subsequent process to become a central wiring layer of the multilayer wiring board, and the insulating layer 42 becomes an insulating layer adjacent to the central wiring layer.
Therefore, when giving a certain strength (shape retention) for suppressing warpage of the substrate to the central wiring layer, a copper foil having a predetermined thickness (about 20 to 50 μm) is used.
When a predetermined strength is required as the insulating layer 42 to prevent warping of the substrate, a resin film containing a reinforcing material such as an epoxy resin containing glass cloth is used. Further, since the thickness of the insulating layer 42 also affects the warpage of the substrate, a resin film having an appropriate thickness is selected and used.

The metal foil with carrier 41 is obtained by depositing and forming a metal foil 41b on one surface side of the carrier plate 41a through a release layer. A copper plate having a thickness of 14 to 70 μm can be used as the carrier plate 41a, and a copper foil having a thickness of 1 to 10 μm can be used as the metal foil 41b.
The metal foil 41b is patterned in a subsequent process to become a wiring pattern of a wiring layer other than the central wiring layer of the multilayer wiring board.

  Next, a pair of laminated bodies 40 are arranged opposite to each other and bonded by a bonding layer 45 made of a semi-cured thermosetting sheet (FIG. 7B). The laminated body 40 is integrally bonded by making the metal foil 41 with a carrier of the laminated body 40 face the bonding layer 45 and sandwiching the bonding layer 45 while heating from both sides by the laminated body 40. Copper foil 44 is exposed on both surfaces of the joined body.

  Next, in order to pattern the copper foil 44, the surface of the copper foil 44 is covered with a resist 46, and the resist 46 is exposed and developed to form a resist pattern that covers a portion of the copper foil 44 that remains as a wiring layer ( FIG. 7 (c)). The resist pattern is patterned on both the upper and lower copper foils 44. The copper foil 44 becomes the central wiring layer 20 of the multilayer wiring board 10 described above, and the resist 46 is patterned according to the wiring pattern in the central wiring layer 20.

FIG. 7D shows a state in which the resist 46 is removed by patterning the copper foils 44 on both sides of the joined body using the resist 46 as a mask. Through this step, the copper foil 44 is patterned in a predetermined pattern on the surface of the insulating layer 42. The patterned copper foil 44 becomes the central wiring layer 20. The insulating layer 42 is the insulating layer 31 that supports the central wiring layer 20.
In the present embodiment, the central wiring layer 20 is patterned by the subtracting method, but the central wiring layer 20 can also be patterned by the semi-additive method.

FIG. 8A shows a state in which a joined body in which the metal foil with carrier 48 is attached via the insulating layer 47 is formed on both surfaces of the joined body on which the central wiring layer 20 is formed. The metal foil with carrier 48 is bonded by heating and pressing through a thermosetting resin film.
The thermosetting resin film that joins the metal foil with carrier 48 becomes the insulating layer 32 that is attached to the central wiring layer 20 of the multilayer wiring board 10 described above. As the thermosetting resin film, a resin film having a thickness and a material based on the design of the insulating layer 32 is used. The carrier-attached metal foil 48 is provided with a release layer between the metal foil 48b and the carrier plate 48a.

Next, the joined body shown in FIG. 8A is separated from the boundary surfaces (peeling layers) between the metal foils 41b and 48a of the carrier-attached metal foils 41 and 48 and the carrier plates 41a and 48b.
About the metal foil 48 with a carrier in the outermost layer, the carrier plate 48a is peeled off, and the metal foil 48b is attached to the insulating layer 47. The insulating layer 47 corresponds to the insulating layer 32 of the multilayer wiring board 10.
For the inner metal foil 41 with a carrier, the carrier plate 41 a is bonded to the bonding layer 45, and the metal foil 41 b is attached to the insulating layer 31.
Thus, the central wiring layer 20 is sandwiched between the insulating layers 31 and 32, and two sets of laminated bodies 50 in which the metal foils 41b and 48a are deposited on the outer surfaces of the insulating layers 31 and 32 are obtained (FIG. 8B). .

FIG. 9 shows a process of forming a wiring layer in the stacked body 50. In order to form a wiring layer in the laminated body 50, a method conventionally performed as a method for manufacturing a wiring board, such as a build-up method, may be applied.
Below, the method of forming a wiring layer by a semi-additive method is illustrated.
FIG. 9A shows a state in which via holes 31a and 32a are formed in the insulating layers 31 and 32 by laser processing. The via holes 31a and 32a are formed so that the central wiring layer 20 is exposed on the inner bottom surface. After forming the via holes 31a and 32a, desmear treatment is performed as necessary.

FIG. 9B shows a state in which electroless copper plating or the like is applied to both surfaces of the laminated body 50 to form a plating seed layer 52 and further a resist pattern 54 is formed according to the wiring patterns in the wiring layers 21 and 22. . The resist pattern 54 is formed so that a portion that becomes a wiring pattern is exposed.
When forming the via holes 31a and 32a, the via holes can be processed with the metal foils 41b and 48b attached to the insulating layers 31 and 32, or after the metal foils 41b and 48b are removed by etching. Via holes can be drilled.

  FIG. 9C shows a state in which electrolytic copper plating using the plating seed layer 52 as a plating power feeding layer is performed and the copper plating 55 is raised on the plating seed layer 52 not covered with the resist pattern 54. By setting the plating conditions, the via holes 31a and 32a can be plated so as to be filled with the copper plating 55 (filled via).

  Next, the resist pattern 54 is removed, and the exposed portions of the plating seed layer 52 and the portions of the metal foils 41b and 48a thereunder are selectively etched and removed, and the wiring layers 21 and 22 are formed as independent patterns. This is formed (FIG. 9D). The exposed portion of the plating seed layer 52 and the underlying metal foils 41b and 41b are much thinner than the thickness of the copper plating 55 plated by electrolytic copper plating, and can be selectively selected by a chemical etching operation. Can be removed.

FIG. 9D shows a state in which the wiring patterns of the wiring layers 21 and 22 are electrically connected to the central wiring layer 20 sandwiched between the insulating layers 31 and 32 through the vias 25 made of the copper plating 55. .
In order to form the insulating layers 33 and 34 and the wiring layers 23 and 24 on the wiring layers 21 and 22, a resin film is laminated on the insulating layers 31 and 32 as shown in FIG. The layers 33 and 34 are formed, the via holes 33a and 34a are formed in the insulating layers 33 and 34 by laser processing, and the wiring layers 21 and 22 are formed. As for the resin films to be the insulating layers 33 and 34, a resin film having a required thickness and material is used in consideration of the warpage of the substrate.

In this way, the multilayer wiring board 10 shown in FIG. 1 can be manufactured. The vias 25 formed in the insulating layers 31 to 34 are formed so that the trapezoidal cross-sectional shape is symmetric on one side and the other side with respect to the central wiring layer 20.
Insulating layers 31, 32, 33, and 34 are selected based on the design of the insulating layer considering the warpage of the substrate by appropriately selecting the thickness and material of the resin film to be the insulating layer. Formed.

FIG. 9 shows an example in which a wiring layer is formed by a semi-additive method, but it can also be formed by a method other than a semi-additive method such as a subtractive method. Further, in the above example, by using the metal foil with a carrier, it is possible to manufacture a set of laminated bodies 50 in a single manufacturing process, and to manufacture while suppressing warping of the substrate. However, the method of forming the stacked body 50 is not limited to the above method.
The above-described method for manufacturing a multilayer wiring board includes adjusting the thickness of the central wiring layer of the multilayer wiring board and the thickness of the insulating layer of the multilayer wiring board, and appropriately selecting a resin material to be used for the insulating layer. This is a method that enables this to be easily performed, and can be suitably used as a method for manufacturing a multilayer wiring board according to the present invention.

10, 11, 12, 13, 14 Multi-layer wiring board 20 Central wiring layer 21, 22, 23, 24 Wiring layer 23a, 24a Pad 25, 26 Via 31, 32, 33, 34 Insulating layer 31a, 32a, 33a, 34a Via Hole 36, 38 Protective film 40 Laminate 41, 48 Metal foil with carrier 42 Insulating layer 44 Copper foil 45 Bonding layer 46 Resist 47 Insulating layer 50 Laminate

Claims (9)

A central wiring layer disposed in the center of the thickness direction of the substrate;
A wiring layer laminated via an insulating layer on one side and the other side sandwiching the central wiring layer,
The wiring layer on the one side of the central wiring layer and the wiring layer on the other side are provided in the same number of layers,
The insulating layer on the one side of the central wiring layer and the insulating layer on the other side are provided in the same number of layers,
The insulating layer on one side formed so as to sandwich the central wiring layer and the insulating layer on the other side are formed to have the same thickness with respect to the central wiring layer,
The wiring layer including the central wiring layer is electrically connected through a via,
The vias on one side of the central wiring layer and the vias on the other side are formed in a symmetrical direction, with the side toward the central wiring layer being a narrow trapezoidal cross-sectional shape,
The central wiring layer has a wiring pattern and a dummy pattern,
The dummy pattern is formed in an airspace portion where the wiring pattern is not arranged ,
A semiconductor element mounting surface is formed on the one side of the central wiring layer,
The insulating layer on the one side of the central wiring layer is formed with more vias than the insulating layer on the other side,
The insulating layer on the one side and the other side sandwiching the central wiring layer in the symmetrical position sandwiching the central wiring layer has no stress caused by the insulating layer on one side and the other side of the central wiring layer. Formed to be even,
Multilayers characterized in that stress generated by uneven distribution of conductors in one and the other wiring layers sandwiching the central wiring layer is canceled out by the insulating layer, and the substrate is flattened. Wiring board.   2. The multilayer wiring board according to claim 1, wherein the central wiring layer having the wiring pattern and the dummy pattern is configured such that conductors are uniformly arranged as a whole in a planar region.   The multilayer wiring board according to claim 1, wherein the central wiring layer is formed thicker than other wiring layers.   2. The multilayer wiring board according to claim 1, wherein the insulating layer on the one side and the insulating layer on the other side are formed of the same material. Said insulating layer of said one side of the central wiring layer and one of said opposite sides of the insulating layer, wherein any of the insulating layer is characterized in that it is a different imbalance layer of stress to other insulating layer Item 11. A multilayer wiring board according to Item 1 . Insulating layers on one side and the other side of the central wiring layer are formed of different kinds of insulating materials on the one side and the other side of the central wiring layer, and insulation is performed on one side and the other side of the central wiring layer. 2. The multilayer wiring board according to claim 1, wherein the stress caused by the layers is uneven. The insulating layer on one side sandwiching the central wiring layer is formed of a resin material mixed with a reinforcing material, and the insulating layer on the other side is formed of a resin material not mixed with a reinforcing material. The multilayer wiring board according to any one of claims 1 to 6 . The multilayer wiring board according to any one of claims 1 to 6 , wherein the insulating layers at symmetrical positions sandwiching the central wiring layer are formed of a resin material mixed with a reinforcing material. An insulating layer adjacent to the central wiring layer is formed of a resin material mixed with a reinforcing material,
9. The multilayer wiring board according to claim 8, wherein the insulating layer located outside the insulating layer is formed of a resin material into which a reinforcing material is not mixed.