JP4071492B2 - Thin plate manufacturing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thin plate manufacturing apparatus, and more particularly to a thin plate manufacturing apparatus that grows a thin plate on a substrate by immersing the substrate in a melt.
[0002]
[Background technology]
As one of conventional thin plate manufacturing apparatuses, for example, “silicon ribbon manufacturing apparatus and manufacturing method thereof” disclosed in Japanese Patent Laid-Open No. 10-29895 can be cited. In this silicon ribbon manufacturing apparatus, a part of the cylindrical surface of the rotating body is immersed in a crucible that can be moved up and down, and the carbon net is pulled out while rotating the cooling body to solidify and grow silicon following the carbon net. The structure which can take out a thin plate continuously is employ | adopted. According to this method, both process costs and raw material costs can be reduced as compared with the conventional silicon wafer manufacturing method in which an ingot is sliced with a wire saw or the like to obtain a wafer.
[0003]
In addition, since the rotating cooling body draws out while forcibly cooling silicon, the drawing speed can be greatly improved. Further, the drawing speed can be controlled by the size of the rotating body and the number of rotations, and generally drawing at 100 mm / min or more is possible. However, according to the “silicon ribbon manufacturing apparatus and manufacturing method”, the rotating body is a cylinder, so that there is a problem that the plate becomes a bent plate with a curvature remaining in the shape of the thin plate.
[0004]
Therefore, in Japanese Patent Application No. 11-369299 (hereinafter referred to as “background art”) filed by the same applicant as the present patent application, “Crystal Sheet” can solve such a problem. Manufacturing apparatus and crystal sheet manufacturing method "are disclosed.
[0005]
Here, FIG. 21 shows a schematic structure of the “crystal sheet manufacturing apparatus”. In the structure of this “crystal sheet manufacturing apparatus”, the plurality of substrates 14 are guided by the polygonal column rotating body 12, immersed in the melt 6 while being rotated from one side, and taken out from the melt 6 on the opposite side. And having a configuration to be carried out of the system. The substrates 14 are connected in a caterpillar shape by a substrate connector 15. Further, the rotation shaft 13 is controlled to rotate at a predetermined number of rotations by a rotation driving mechanism (not shown), and the substrate 14 is guided to the melt 6 one after another and subsequently carried out. The melt 6 is held in a crucible 5 provided with a heating device 4.
[0006]
According to the “crystal sheet manufacturing apparatus” having this configuration, the flat substrate 14 guided by the polygonal column rotating body 12 is immersed in the melt 6, so that the substrate 14 is flat and warped without any curvature. It is possible to solidify and grow a crystal sheet made of a flat plate having no flat plate. In addition, by continuously rotating the polygonal column rotating body 12, it is possible to continuously take out the crystal sheets from the substrate 14.
[0007]
[Problems to be solved by the invention]
However, in the “crystal sheet manufacturing apparatus and crystal sheet manufacturing method” in the background art described above, the movement of the substrate 14 is limited to rotational movement. Therefore, it is difficult to control the growth conditions when a thin plate is grown on the substrate 14.
[0008]
For example, the horizontal direction moving speed and the vertical direction moving speed of the substrate 14 cannot be set separately. As a result, the penetration angle when the substrate 14 enters the melt 6 cannot be arbitrarily set. Further, it is not possible to arbitrarily set a path when the substrate 14 travels through the melt 6. In particular, the escape angle when the substrate 14 escapes from the melt 6 cannot be set arbitrarily.
[0009]
As a result, the conditions for growing a thin plate on the substrate 14 and the control conditions for the relative relationship between the thin plate and the melt 6 when the substrate 14 escapes from the melt 6 cannot be arbitrarily set. It is difficult to optimize. In particular, since it is difficult to control the meniscus that crawls on the thin plate when the thin plate escapes from the melt 6, deterioration of the shape of the thin plate due to the occurrence of dripping at the end of the thin plate becomes a problem.
[0010]
Further, the movement of the substrate 14 before the substrate 14 enters the melt 6 or after it escapes cannot be set arbitrarily. Thereby, the place where the thin plate is peeled and taken out from the substrate 14 and the place where the substrate 14 is detached can not be set arbitrarily, and must be performed above the melt 6. Therefore, the mechanical mechanism for performing the above operation is easily affected by heat from radiation and transmission from the melt 6, the crucible 5, and the heating device 4, making it difficult to design the mechanism and improving mass productivity. It becomes difficult.
[0011]
As described above, in the “crystal sheet manufacturing apparatus and crystal sheet manufacturing method” in the background art described above, although a flat plate is obtained, the shape of the thin plate can be optimized by rotating the substrate 14. There was a problem that it was difficult and it was difficult to improve mass productivity.
[0012]
Accordingly, the present invention has been made to solve the above-described problems of the background art, and a thin plate manufacturing apparatus capable of obtaining a flat plate and further optimizing the shape of the obtained thin plate. The purpose is to provide.
[0013]
[Means for Solving the Problems]
In order to solve the above problems, the inventors of the present application have conducted extensive research and development, and as a result, the relative relationship between the substrate (and the thin plate grown on the substrate) and the melt affects the quality of the thin plate and the shape of the thin plate. Found that is giving. For example, when the substrate escapes from the melt, a large puddle remains due to the tension of the melt unless the substrate is pulled up at an angle close to vertical.
[0014]
In the case of improving the relative relationship between the substrate and the melt and controlling the movement of the substrate so as to obtain an optimum relative relationship, as disclosed in the background art, the substrate moves on a certain trajectory. Since the movement cannot be set arbitrarily in the moving rotational movement, it cannot be controlled. Therefore, in order to arbitrarily set the substrate motion, it is necessary to design a mechanism for freely moving and transporting the substrate. However, since the apparatus according to the present invention may have a heating mechanism or the like for holding a high-temperature melt, the mechanism for transporting the substrate is exposed to a high temperature. For this reason, it is difficult to introduce a complicated substrate transport mechanism, and it is necessary to invent a substrate transport mechanism that reliably executes a minimum necessary operation.
[0015]
Therefore, in one aspect of the thin plate manufacturing apparatus of the present invention, a thin plate manufacturing apparatus for forming a thin plate on the surface of the substrate by immersing the substrate held in the substrate transport mechanism in the melt, The substrate transport mechanism adjusts the horizontal movement position of the substrate fixing means in order to adjust the horizontal movement position of the substrate surface with respect to the liquid level of the melt and the substrate fixing means for fixing the substrate. Horizontal movement position adjusting means for adjusting the vertical movement position of the substrate fixing means to adjust the vertical movement position of the substrate surface with respect to the liquid level of the melt, and Substrate tilting means for adjusting the tilt angle of the substrate fixing means is provided for tilting the substrate surface with respect to the liquid surface of the melt.
[0016]
Further, the horizontal movement position adjusting means is arranged in the horizontal direction. Linearly And a horizontal movement unit provided to be movable along the horizontal guide rail. The vertical movement position adjusting means is supported by the horizontal movement unit so as to be slidable in the vertical direction. A vertical guide shaft connected to the lower end portion of the substrate fixing means, and a horizontal guide rail provided along the horizontal guide rail, for guiding the moving position of the upper end portion of the vertical guide shaft. , Including a region extending in the horizontal direction and projecting toward the liquid surface side of the melt above the liquid surface of the melt A vertical guide rail, and the substrate tilting means is supported in the horizontal movement unit so as to be slidable in the vertical direction, and the substrate fixing means is connected to the lower end portion thereof, and the horizontal direction Provided along the guide rail to guide the upper end of the tilt guide shaft , Including a region extending in the horizontal direction and projecting toward the liquid surface side of the melt above the liquid surface of the melt And a tilt guide rail.
[0017]
By adopting this configuration, it is possible to move the vertical guide shaft and the tilt guide shaft in the horizontal direction without providing a dedicated drive device by moving the horizontal movement unit along the horizontal guide rail. Become. Further, since the movement directions of the upper end portions of the vertical guide shaft and the tilt guide shaft are guided by the vertical guide rail and the tilt guide rail, respectively, the positions of the vertical guide shaft and the tilt guide shaft are determined in a passive manner. Can be made. As a result, it is possible to adopt a structure in which a driving device is provided only in the horizontal movement position adjusting means without providing a driving device in each of the horizontal movement position adjusting means, the vertical movement position adjusting means, and the substrate tilting means as the substrate transport mechanism. Therefore, the structure of the substrate transport mechanism can be simplified.
[0018]
Further, in another aspect of the thin plate manufacturing apparatus of the present invention, a thin plate manufacturing apparatus for forming a thin plate on the substrate surface by immersing the substrate held in the substrate transport mechanism in the melt, The substrate transport mechanism adjusts the horizontal movement position of the substrate fixing means in order to adjust the horizontal movement position of the substrate surface with respect to the liquid level of the melt and the substrate fixing means for fixing the substrate. Horizontal movement position adjusting means for adjusting the vertical movement position of the substrate fixing means to adjust the vertical movement position of the substrate surface with respect to the liquid level of the melt, and Substrate tilting means for adjusting the tilt angle of the substrate fixing means is provided for tilting the substrate surface with respect to the liquid surface of the melt.
[0019]
Further, the horizontal movement position adjusting means extends in the horizontal direction. And a region that protrudes toward the liquid surface side of the melt above the liquid surface of the melt. Horizontal and vertical direction guide rails, and a horizontal movement unit provided to be movable along the horizontal and vertical direction guide rails. The vertical movement position adjusting means has an upper end connected to the horizontal movement unit, A vertical guide shaft to which the substrate fixing means is coupled at the lower end; and the substrate tilting means is slidably supported in the vertical direction; and the tilt guide shaft to which the substrate fixing means is coupled to the lower end. , Provided along the horizontal and vertical guide rails, for guiding the upper end of the vertical shaft , Including a region extending in the horizontal direction and projecting toward the liquid surface side of the melt above the liquid surface of the melt And a tilt guide rail.
[0020]
By adopting this configuration, it is possible to move the vertical guide shaft and the tilt guide shaft in the horizontal direction without providing a dedicated drive device by moving the horizontal movement unit along the horizontal and vertical guide rails. It becomes possible. Also, since the upper end of the vertical guide shaft is connected to the horizontal moving unit, the position of the vertical guide shaft can be determined passively by adjusting the trajectory of the horizontal / vertical guide rail. Can do. Further, since the movement direction of the upper end portion of the tilt guide shaft is guided by the tilt guide rail, the position of the tilt guide shaft can be determined in a passive manner.
[0021]
As a result, it is possible to adopt a structure in which a driving device is provided only in the horizontal movement position adjusting means without providing a driving device in each of the horizontal movement position adjusting means, the vertical movement position adjusting means, and the substrate tilting means as the substrate transport mechanism. Therefore, the structure of the substrate transport mechanism can be simplified.
[0022]
In still another aspect of the thin plate manufacturing apparatus of the present invention, the thin plate manufacturing device is for forming a thin plate on the surface of the substrate by immersing the substrate held in the substrate transport mechanism in the melt. The substrate transfer mechanism adjusts the horizontal movement position of the substrate fixing means to adjust the horizontal movement position of the substrate surface with respect to the liquid level of the melt and the substrate fixing means for fixing the substrate. A horizontal movement position adjusting means for adjusting the vertical movement position of the substrate fixing means to adjust a vertical movement position of the substrate surface with respect to the liquid level of the melt; And a substrate tilting means for adjusting the tilt angle of the substrate fixing means in order to tilt the substrate surface with respect to the liquid surface of the melt.
[0023]
Further, the horizontal movement position adjusting means extends in the horizontal direction. And a region that protrudes toward the liquid surface side of the melt above the liquid surface of the melt. A horizontal / vertical / tilting direction guide rail; and a horizontal movement unit provided to be movable along the horizontal rail. The vertical movement position adjusting means has an upper end connected to the horizontal movement unit, and a lower end. The substrate tilting means has a tilt guide shaft having an upper end connected to the horizontal movement unit and a substrate fixing means connected to the lower end. .
[0024]
By adopting this configuration, the horizontal moving unit is moved along the horizontal / vertical / tilting direction guide rails, so that the vertical guiding shaft and the tilting guiding shaft are moved in the horizontal direction without providing a dedicated driving device. It becomes possible. In addition, since the upper end portions of the vertical guide shaft and the tilt guide shaft are respectively connected to the horizontal movement unit, the vertical guide shaft and the tilt guide can be adjusted by adjusting the track of the horizontal / vertical / tilt direction guide rail. The position of the axis can also be determined following.
[0025]
As a result, it is possible to adopt a structure in which a driving device is provided only in the horizontal movement position adjusting means without providing a driving device in each of the horizontal movement position adjusting means, the vertical movement position adjusting means, and the substrate tilting means as the substrate transport mechanism. Therefore, the structure of the substrate transport mechanism can be simplified.
[0026]
In still another aspect of the thin plate manufacturing apparatus of the present invention, the thin plate manufacturing device is for forming a thin plate on the surface of the substrate by immersing the substrate held in the substrate transport mechanism in the melt. The substrate transfer mechanism adjusts the horizontal movement position of the substrate fixing means to adjust the horizontal movement position of the substrate surface with respect to the liquid level of the melt and the substrate fixing means for fixing the substrate. A horizontal movement position adjusting means for adjusting the vertical movement position of the substrate fixing means to adjust a vertical movement position of the substrate surface with respect to the liquid level of the melt; And a substrate tilting means for adjusting the tilt angle of the substrate fixing means in order to tilt the substrate surface with respect to the liquid surface of the melt.
[0027]
Further, the horizontal movement position adjusting means is arranged in the horizontal direction. Linearly A horizontal guide rail that extends, and a horizontal movement unit that is movably provided along the horizontal rail.The vertical movement position adjusting means is supported in the horizontal movement unit so as to be slidable in the vertical direction. A vertical guide shaft connected to the lower end portion of the board fixing means and a horizontal rail provided along the horizontal rail to guide the movement position of the upper end portion of the vertical guide shaft. , Including a region extending in the horizontal direction and projecting toward the liquid surface side of the melt above the liquid surface of the melt The substrate tilting means is supported by the horizontal movement unit so as to be slidable in the vertical direction, the substrate fixing means is connected to the lower end portion, and the moving position of the upper end portion is Tilt guide shaft guided by the vertical and tilt direction guide rails The Have.
[0028]
By adopting this configuration, it is possible to move the vertical guide shaft and the tilt guide shaft in the horizontal direction without providing a dedicated drive device by moving the horizontal movement unit along the horizontal guide rail. Become. In addition, since the movement directions of the upper end portions of the vertical guide shaft and the tilt guide shaft are guided by the vertical and tilt direction guide rails, the positions of the vertical guide shaft and the tilt guide shaft are determined in a passive manner. Can do. As a result, it is possible to adopt a structure in which a driving device is provided only in the horizontal movement position adjusting means without providing a driving device in each of the horizontal movement position adjusting means, the vertical movement position adjusting means, and the substrate tilting means as the substrate transport mechanism. Therefore, the structure of the substrate transport mechanism can be simplified.
[0029]
Moreover, in the said invention, Preferably, the substrate temperature control means for controlling the temperature of the said substrate surface is further provided before the said board | substrate is immersed in the said melt. By adopting this configuration, it is possible to optimize the substrate surface temperature when a thin plate is formed on the substrate surface.
[0030]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a thin plate manufacturing apparatus and a thin plate manufacturing method in each embodiment based on the present invention will be described with reference to the drawings.
[0031]
(Embodiment 1)
First, with reference to FIG. 1 and FIG. 2, the thin plate manufacturing apparatus and thin plate manufacturing method in this Embodiment are demonstrated. FIG. 1 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus in the present embodiment, and FIG. 2 is an enlarged view of a substrate transport mechanism 1 described later.
[0032]
(Overall configuration of thin plate manufacturing apparatus 1000)
First, with reference to FIG. 1, the whole structure of the thin plate manufacturing apparatus 1000 in this Embodiment is demonstrated. In the thin plate manufacturing apparatus 1000, the substrate can be moved in two directions, ie, a horizontal direction 104 and a vertical direction 105. The thin plate manufacturing apparatus 1000 includes a substrate transport mechanism 1, and the substrate transport mechanism 1 is provided so as to be movable in the horizontal direction 104 along the horizontal movement axis 8. The horizontal movement shaft 8 has a linear rail, and uses a horizontal movement motor provided in a unit 103 (see FIG. 2 described later) provided in the substrate conveyance mechanism 1. The substrate 2 held by the substrate transport mechanism 1 can freely move in the horizontal direction 104.
[0033]
The horizontal movement axis 8 is provided so as to be movable along the vertical movement axis 9. The horizontal movement shaft 8 is connected to a vertical movement motor 7. The vertical movement shaft 9 is a linear rail with teeth, and the vertical movement motor 7 is operated to provide the horizontal movement shaft 8 and the horizontal movement shaft 8 connected to the vertical movement motor 7. The substrate transport mechanism 1 and the substrate 2 held by the substrate transport mechanism 1 can be freely moved in the vertical direction 105. As a result, the substrate 2 can freely move in a plane defined by the horizontal movement axis 8 and the vertical movement axis 9. For the movement, either or both of the horizontal movement axis 8 and the vertical movement axis 9 can be operated as a mechanism such as a ball screw.
[0034]
Below the horizontal movement axis 8, a crucible 5 for holding the melt 6 and a heating mechanism 4 for heating the melt 6 are arranged. A heat shielding mechanism 10 is disposed above the melt 6 in order to insulate between the melt 6 and a substrate fixing member 101 (described later) and a unit 103 (described later). For the heat shielding mechanism 10, an apparatus, a member, or the like having high heat insulation properties such as a water-cooled metal plate or a heat-resistant heat insulation plate is used. As a result, it is possible to avoid accuracy loss due to thermal destruction of the mechanism due to thermal effects on the substrate fixing member 101 (described later) and the unit 103 (described later) and linearity deterioration of the horizontal movement shaft 8 due to thermal expansion. become.
[0035]
(Detailed structure of substrate transport mechanism 1)
Next, the detailed structure of the substrate transport mechanism 1 will be described with reference to FIG. In the present embodiment, in the substrate transport mechanism 1, two substrate tilting shafts 102 are connected to a unit 103 including a horizontal movement motor and a tilting motor. By raising and lowering the two substrate tilting shafts 102 independently (in the direction indicated by the arrow 106 in the figure), the substrate fixing member 101 connected to the lower portion thereof can be tilted.
[0036]
In the present embodiment, as a mechanism for attaching and detaching the substrate 2 and the substrate fixing member 101, a mechanism for fitting each other in a concavo-convex shape is adopted. As this mechanism, other known attaching / detaching functions can be applied. When the substrate 2 is mounted on the substrate fixing member 102 or when the substrate 2 is removed from the substrate fixing member 102, a desorption mechanism (not shown) is installed at a location away from the heating mechanism 4.
[0037]
Here, it is desirable that the substrate 2 is excellent in heat resistance and does not contaminate the growing thin plate 3, such as carbon, SiC, refractory metal, etc., and those materials coated with other materials. In this embodiment, a carbon substrate is used. The surface of the substrate 2 on which the thin plate 3 is grown was flat. However, this surface is not limited to being completely smooth, and a specific shape processing may be applied to the surface.
[0038]
In the present embodiment, due to solidification growth from the melt 6, the crystal state of the thin plate 3 is a mixture of single crystal, polycrystal, amorphous, crystalline and amorphous depending on conditions such as temperature. It may be a substance.
[0039]
For the melt 6, a semiconductor material such as silicon, germanium, gallium, arsenic, indium, phosphorus, boron, antimony, zinc, tin, or a metal material such as aluminum, nickel, iron, or the like can be used.
[0040]
(Control of thin plate manufacturing apparatus 1000 and thin plate manufacturing method)
In order to operate the substrate transfer mechanism 1, as shown in FIG. 3, different operation patterns are sent from the personal computer 200 to the horizontal movement motor 201, the vertical movement motor 7, and the tilting motor 202, respectively. The horizontal movement motor 201, the vertical movement motor 7, and the tilting motor 202 are controlled independently. The operation patterns of the horizontal movement motor 201, the vertical movement motor 7, and the tilting motor 202 are switched automatically or manually according to parameters such as time and temperature. In this way, by independently controlling the horizontal movement motor 201, the vertical movement motor 7, and the tilting motor 202, the trajectory of the substrate 2 can be controlled to suit the purpose. It becomes. In addition, the section until just before the substrate 2 is immersed in the melt 6 and the section immediately after the substrate 2 is immersed in the melt 6 are only moved in the horizontal direction (no vertical movement or tilting). It is also possible to select a control as follows.
[0041]
Next, the control of the thin plate manufacturing apparatus 1000 and the thin plate manufacturing method in the case of using the silicon melt as the melt 6 and manufacturing the silicon polycrystalline thin plate 3 from the silicon melt 6 will be described. With reference to FIG. 1, the substrate 2 is mounted on the substrate transport mechanism 1 at a position away from the silicon melt 6. Next, the horizontal movement motor 201 is driven, and the substrate transport mechanism 1 transports the substrate 2 to the position immediately above the silicon melt 6. Further, the horizontal movement motor 201 and the vertical movement motor 7 are moved. By driving each independently, an arbitrary trajectory is given to the substrate 2 and the substrate 2 is immersed in the silicon melt 6. Subsequently, by removing the substrate 2 from the silicon melt 6, the silicon polycrystalline thin plate 3 is grown on the substrate 2. Further, when the substrate 2 is immersed in the silicon melt 6 and taken out, the tilting motor 202, the horizontal movement motor 201, and the vertical movement motor 7 are independently controlled so that a predetermined amount is applied to the substrate 2. Give the slope of.
[0042]
Thereafter, using the horizontal movement motor 201 and the vertical movement motor 7, the substrate 2 on which the silicon polycrystalline thin plate 3 is grown is transported to a position away from the silicon melt 6. Thereafter, the substrate 2 is removed from the substrate transport mechanism 1 to obtain a silicon polycrystalline thin plate 3 grown from the substrate 2.
[0043]
As a method of removing the silicon polycrystalline thin plate 3 grown from the substrate 2 without removing the substrate 2 from the substrate transfer mechanism 1, as shown in FIG. 4, the substrate transfer mechanism is placed on a stage 16 having a plurality of suction holes 16a. The substrate 2 is conveyed by 1 and the silicon polycrystalline thin plate 3 is vacuum-adsorbed by the suction holes 16a. Thereafter, the stage 16 holding the silicon polycrystalline thin plate 3 by suction is moved to the thin plate stock position or an external carry-out mechanism by the arm 16 b provided on the stage 16, and the silicon polycrystalline thin plate 3 is removed from the stage 16. This series of removal operations of the silicon polycrystalline thin plate 3 is performed in synchronization with the movement operation of the substrate transfer mechanism 1.
[0044]
(Orbit step of substrate 2)
A specific orbit step of the substrate 2 for growing the silicon polycrystalline thin plate 3 in the present embodiment will be described below with reference to FIG.
[0045]
First step: The substrate 2 is moved to a position 10 mm directly above the liquid surface of the silicon melt 6 while controlling the horizontal movement motor 201 and the vertical movement motor 7. At this time, the inclination angle (angle with respect to the horizontal) of the substrate 2 is horizontal.
[0046]
Second Step: While controlling the horizontal movement motor 201 and the vertical movement motor 7, from the start of the tip of the substrate 2 until the time when the substrate 2 is immersed 20 mm from the surface of the silicon melt 6. The horizontal movement speed and the vertical movement speed are controlled to be constant (100 mm / second and 50 mm / second, respectively). The inclination angle of the substrate 2 remains horizontal (constant).
[0047]
Third step: When the substrate 2 is immersed 20 mm from the surface of the silicon melt 6, the horizontal movement motor 201 and the vertical movement so that the horizontal movement speed is 500 mm / second and the vertical movement speed is 0 mm / second. The direction moving motor 7 is controlled to move the substrate 2 by 10 mm in the horizontal direction.
[0048]
Fourth step: Next, the tilting motor 202 is controlled such that the traveling direction side of the substrate 2 faces upward and the substrate tilt angle becomes 10 °. The horizontal movement motor 201 and the vertical movement motor 7 are controlled so that the horizontal movement speed and the vertical movement speed are constant (100 mm / second and 10 mm / second respectively), and the substrate 2 is removed from the silicon melt 6. Take out.
[0049]
Fifth step: The tilting motor 202 is controlled so that the substrate tilt angle becomes 45 ° when the end of the substrate 2 escapes. Thereafter, the vertical movement motor 7 is controlled to raise the substrate 2 by 30 mm in the vertical direction at 100 mm / second.
[0050]
Sixth step: Next, the tilting motor 202 is controlled to return the substrate 2 to the horizontal state, and the horizontal movement motor 201 is controlled to transport the substrate 2 to the take-out position.
[0051]
The size of the substrate 2 is 100 mm square, and the immersion time of the substrate 2 in the silicon melt 6 is about 4 seconds. The attachment time of the substrate 2 to the substrate transfer mechanism 1 is about 5 seconds, the movement time from the attachment position to the immersion position of the substrate 2 is 3 seconds, the immersion time is 4 seconds, and the movement time to convey the substrate 2 to the removal position is 3 seconds. The removal time of the substrate 2 from the substrate transfer mechanism 1 was about 5 seconds, and the return time of the substrate transfer mechanism 1 from the removal position to the attachment position was 9 seconds. As a result, the time required for the series of steps is about 29 seconds (5 seconds + 3 seconds + 4 seconds + 3 seconds + 5 seconds + 9 seconds). However, the return time can be shortened by making the substrate attachment position and the removal position the same place, or by providing the substrate attachment mechanism and the removal mechanism on both sides of the heating mechanism 4. The time required for this is about 20 seconds.
[0052]
(Action / Effect)
As described above, according to the silicon polycrystalline thin plate 3 manufactured by the thin plate manufacturing apparatus and the thin plate manufacturing method in the present embodiment, when the substrate 2 is taken out from the silicon melt 6, the silicon polycrystalline thin plate that has been generated in the conventional manufacturing method is obtained. It is possible to reduce the dripping of about 4 mm in height generated at the end of 3 to about 1 mm. This is because when the substrate 2 is taken out from the silicon melt 6, the angle between the substrate 2 and the silicon melt 6 is increased, so that the silicon melt 6 easily flows down and dripping is reduced.
[0053]
Therefore, as described above, the horizontal movement axis 8 and the vertical movement axis 9 are defined by independently controlling the horizontal movement motor 201, the vertical movement motor 7, and the tilting motor 202, respectively. It is possible to freely set the trajectory of the substrate 2 in the plane. Further, by controlling the two substrate tilting axes 102 by the tilting motor 202 so that the tilt angle of the substrate 2 can be controlled independently, the relative relationship between the surface of the substrate 2 and the liquid level of the silicon melt 6 is achieved. (Angle) can be controlled, and the inclination angle of the substrate 2 with respect to the surface of the silicon melt 6 when the substrate 2 escapes from the silicon melt 6 can be optimized.
[0054]
As a result, the relative relationship between the substrate 2 (and the silicon polycrystalline thin plate 3 grown on the substrate 2) and the silicon melt 6 is optimized, and the quality of the silicon polycrystalline thin plate 3 is improved. 3 and the mass productivity of the silicon polycrystalline thin plate 3 can be improved.
[0055]
Moreover, since the board | substrate conveyance mechanism 1 employ | adopted the structure which can attach or detach the board | substrate 2 with respect to the board | substrate conveyance mechanism 1, when durability of the board | substrate 2 is finite, it is possible to replace | exchange only the board | substrate 2. The substrate transport mechanism 1 can be used continuously, and it is not necessary to replace the entire substrate transport mechanism 1, and it is possible to prevent an increase in labor, time, and cost.
[0056]
Further, since the substrate 2 can be attached to and detached from the substrate transport mechanism 1 at a place other than above the crucible 5, thermal destruction of the substrate removal mechanism 1 due to heat transfer from the crucible 5 to the substrate removal mechanism 1, It is possible to avoid adverse effects due to heat such as the possibility of loss of accuracy due to thermal expansion.
[0057]
In addition, when considering mass production in which the silicon polycrystalline thin plate 3 is continuously produced, the attachment / detachment of the substrate 2 should be controlled independently of the movement and tilting of the substrate 2 in accordance with the aging of the substrate 2. For example, the amount of the silicon melt 6 (absolute position such as the height of the melt) changes with time and the atmosphere in the apparatus changes with time. Thus, it is possible to easily set the movement pattern and tilt pattern of the substrate 2 to the optimum pattern over time.
[0058]
(Embodiment 2)
Next, a thin plate manufacturing apparatus and a thin plate manufacturing method in the present embodiment will be described with reference to FIG. FIG. 6 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 2000 in the present embodiment.
[0059]
The basic configuration of thin plate manufacturing apparatus 2000 in the present embodiment is the same as thin plate manufacturing apparatus 1000 in the first embodiment. A difference of the thin plate manufacturing apparatus 2000 from the thin plate manufacturing apparatus 1000 is that only the thin plate 3 is peeled off from the substrate 2 and collected without attaching and removing the substrate 2 to and from the substrate transport mechanism 1. Therefore, since the apparatus configuration of the thin plate manufacturing apparatus 2000 is basically the same as that of the above-described thin plate manufacturing apparatus 1000, the same reference numerals are given to the same parts in FIG. Omitted. The detailed structure of the substrate transport mechanism 1 is also the same as that of the substrate transport mechanism 1 applied to the above-described thin plate manufacturing apparatus 1000, and thus detailed description thereof is omitted.
[0060]
In the present embodiment, the substrate 2 attached to the substrate transport mechanism 1 is transported to the position immediately above the melt 6, and the substrate 2 is immersed in the melt 6 in an arbitrary path as in the first embodiment. The thin plate 3 is produced by a series of operations until the thin plate 3 is grown on the substrate, the substrate 2 and the thin plate 3 are transferred to the take-out position, and only the thin plate 3 is removed from the substrate 2. did.
[0061]
(Control of thin plate manufacturing apparatus 2000 and thin plate manufacturing method)
Next, the control of the thin plate manufacturing apparatus 2000 and the thin plate manufacturing method are basically the same as the control of the thin plate manufacturing apparatus 1000 and the thin plate manufacturing method, and the silicon polycrystalline thin plate 3 was manufactured. The trajectory step of the substrate 2 is the same as the step described with reference to FIG. 5, but only the silicon polycrystalline thin plate 3 is peeled off from the substrate 2 and collected without attaching and removing the substrate 2 to and from the substrate transport mechanism 1. The steps are different.
[0062]
Accordingly, the time for mounting and removing the substrate 2 is not required, the immersion time is about 4 seconds, the time for moving the substrate to the removal position is 3 seconds, the time for removing the thin plate 3 from the substrate 2 is about 5 seconds, and the immersion is performed from the removal position. The return time to the position was 6 seconds. For this reason, the time required for the series of steps is about 18 seconds (4 seconds + 3 seconds + 5 seconds + 6 seconds).
[0063]
(Action / Effect)
As described above, according to the thin plate manufacturing apparatus and the thin plate manufacturing method in the present embodiment, the same functions and effects as those of the first embodiment can be obtained. Furthermore, since the step of removing and recovering only the silicon polycrystalline thin plate 3 from the substrate 2 without attaching and removing the substrate 2 to and from the substrate transport mechanism 1 is adopted, the time for mounting and removing the substrate 2 becomes unnecessary, The manufacturing time of the silicon polycrystalline thin plate 3 can be shortened.
[0064]
(Embodiment 3)
Next, a thin plate manufacturing apparatus and a thin plate manufacturing method in the present embodiment will be described with reference to FIG. FIG. 7 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 3000 in the present embodiment. The thin plate manufacturing apparatus 3000 according to the present embodiment is configured such that the substrate 2 can freely move in a three-dimensional space including the horizontal direction and the vertical direction. In addition, the same reference number is attached | subjected to the same part as the thin plate manufacturing apparatus 1000 mentioned above, and detailed description is abbreviate | omitted. Further, as the tilting mechanism for tilting the substrate 2 provided at the distal end portion of the universal arm type substrate transport mechanism 11, the same mechanism as the mechanism shown in FIG. 2 described in the first embodiment is employed. Therefore, detailed description here is omitted.
[0065]
The substrate transport mechanism 11 in the present embodiment has an extendable arm 112 having an extendable mechanism, and the extendable arm 112 enables the substrate 2 to move in the horizontal direction at high speed and in a wide range. Further, by combining an arm operation mechanism (not shown) on the support side of the extendable arm 112, the extendable arm 112 can be freely moved in the three-dimensional space.
[0066]
The tilting of the board 2 and the fine vertical and horizontal movement are performed by a joint provided at an intermediate position of the telescopic arm 112, a board tilting motor 111 provided at the tip of the telescopic arm 112, the telescopic arm 112, and a joint of the joint. Is possible. As in the case of the first embodiment, the substrate tilt can be adjusted by the operation of the substrate tilt axis.
[0067]
Further, similarly to the first embodiment, the heat shielding mechanism 10 is provided above the heating mechanism 4, the crucible 5, and the melt 6 in order to prevent heat transfer to the substrate fixing member 101 and the substrate tilting motor 111. It is desirable to install. As in the first embodiment, a water-cooled metal plate or a heat-resistant heat-insulating plate is used for the heat shielding mechanism 10. This avoids accuracy loss due to thermal destruction of the mechanism due to thermal effects on the substrate fixing member 101, the substrate tilting motor 111, and the telescopic arm 112, and linearity degradation of the horizontal moving shaft 8 due to thermal expansion. It becomes possible.
[0068]
The place where the substrate 2 is attached to or removed from the substrate transport mechanism 11 is preferably installed in the vicinity of the base of the extendable arm 112 in order not to make the length of the extendable arm 112 unnecessarily long. Therefore, in the present embodiment, a mechanism for detaching the substrate 2 from the substrate transport mechanism 11 is provided on the base side of the extendable arm 112.
[0069]
(Control of thin plate manufacturing apparatus 3000 and thin plate manufacturing method)
Next, the control of the thin plate manufacturing apparatus 3000 and the thin plate manufacturing method are basically the same as the control of the thin plate manufacturing apparatus 1000 and the thin plate manufacturing method, and the silicon polycrystalline thin plate 3 was manufactured. The trajectory step of the substrate 2 is the same as the step described in FIG.
[0070]
In the case of this embodiment, the mounting time of the substrate 2 is about 5 seconds, the moving time from the detaching position of the substrate 2 to the immersion position of the silicon melt 6 is 3 seconds, the immersing time is 4 seconds, and the substrate 2 is moved to the detaching position. The return time was 6 seconds, and the substrate 2 removal time was about 5 seconds. For this reason, the time required for the series of steps is approximately 23 seconds (5 seconds + 3 seconds + 4 seconds + 6 seconds + 5 seconds).
[0071]
(Action / Effect)
As described above, according to the thin plate manufacturing apparatus and the thin plate manufacturing method in the present embodiment, the same functions and effects as those of the first embodiment can be obtained.
[0072]
(Embodiment 4)
Next, a thin plate manufacturing apparatus and a thin plate manufacturing method in the present embodiment will be described. The basic configuration of the thin plate manufacturing apparatus in the present embodiment is the same as that of the thin plate manufacturing apparatus 3000 in the third embodiment shown in FIG. The difference from the third embodiment is that only the thin plate 3 is peeled off from the substrate 2 and collected without attaching and removing the substrate 2 to and from the substrate transport mechanism 1.
[0073]
In the present embodiment, the substrate 2 attached to the substrate transport mechanism 1 is transported to the position immediately above the melt 6, and the substrate 2 is immersed in the melt 6 in an arbitrary path as in the first embodiment. The thin plate 3 is produced by a series of operations until the thin plate 3 is grown on the substrate, the substrate 2 and the thin plate 3 are transferred to the take-out position, and only the thin plate 3 is removed from the substrate 2. did.
[0074]
(Control of thin plate manufacturing equipment and thin plate manufacturing method)
Next, the thin plate manufacturing apparatus control and the thin plate manufacturing method were basically the same as those of the thin plate manufacturing apparatus 3000 and the thin plate manufacturing method, and the silicon polycrystalline thin plate 3 was manufactured. The trajectory step of the substrate 2 is the same as the step described with reference to FIG. 5, but only the silicon polycrystalline thin plate 3 is peeled off from the substrate 2 and collected without attaching and removing the substrate 2 to and from the substrate transport mechanism 1. The steps are different.
[0075]
Accordingly, the time for mounting / removing the substrate 2 is not required, the moving time from the attachment / detachment position of the substrate 2 to the immersion position of the substrate 2 is about 3 seconds, the immersion time of the substrate 2 is about 4 seconds, and the return to the attachment / detachment position of the substrate 2 is performed. The time was about 6 seconds, and the removal time of the silicon polycrystalline thin plate 3 was about 5 seconds. For this reason, the time required for the series of steps is about 18 seconds (3 seconds + 4 seconds + 6 seconds + 5 seconds).
[0076]
(Action / Effect)
As described above, according to the thin plate manufacturing apparatus and the thin plate manufacturing method in the present embodiment, the same functions and effects as those of the third embodiment can be obtained. Furthermore, since the step of removing and recovering only the silicon polycrystalline thin plate 3 from the substrate 2 without attaching and removing the substrate 2 to and from the substrate transport mechanism 1 is adopted, the time for mounting and removing the substrate 2 becomes unnecessary, The manufacturing time of the silicon polycrystalline thin plate 3 can be shortened.
[0077]
(Embodiment 5)
A solar cell was prototyped using the silicon thin plate produced by the thin plate production apparatus and thin plate production method described in the first to fourth embodiments and the thin plate production apparatus and thin plate production method in the background art shown in FIG. .
[0078]
Prototype processes applied to the silicon thin plate are: first process: cleaning, second process: texture etching, third process: P diffusion, fourth process: back etching, fifth process: antireflection film, sixth process: back Electrode formation, seventh process: surface electrode formation, eighth process: lead attachment.
[0079]
In the thin plate manufacturing apparatus in the background art shown in FIG. 11, the substrate 14 is a carbon substrate. The surface of the substrate 14 on which the silicon polycrystalline thin plate 3 is grown is planar. As a manufacturing process, first, the substrate is set to 100 mm square, and the polygonal column rotating body 12 is set so that the distance between the surfaces of the polygonal column rotating body 12 + substrate 14 (the rotation radius of the center of the substrate) is 400 mm. Designed.
[0080]
The immersion conditions for the substrate 14 were close to the immersion depth (20 mm) and the immersion time (4 seconds) described in the above embodiments, so that the deepest immersion depth was 20 mm and the immersion time was 4 seconds. Since the substrate 14 is continuously guided, the time required for the series of steps is approximately equal to the immersion time, 4 seconds. The produced silicon polycrystalline thin plate 3 had a height of about 4 mm of liquid dripping generated at the end when the substrate 14 escapes from the melt. This is because there is no means for controlling the tilt angle of the substrate 14 immediately after escape, and therefore the angle between the substrate surface and the melt surface is always low, so that liquid does not easily flow down and dripping increases.
[0081]
By setting the immersion depth and the number of rotations, it is possible to control some thin plate growth conditions and the relative relationship between the substrate and the melt, but it is not possible to arbitrarily control the immersion motion of the substrate, A puddle remains on the substrate.
[0082]
FIG. 8 shows the dripping height, the yield in solar cell trial manufacture, and the solar cell conversion efficiency in each embodiment. Since the silicon polycrystalline thin plate 3 in the first to fourth embodiments has a small liquid dripping of 1 mm, the printing at the time of electrode formation can be performed uniformly. However, the silicon polycrystalline thin plate 3 produced by the background art was broken by the influence of dripping, and the screen was broken or the electrodes were partially blotted or disconnected. The yield rate (solar cell prototype yield) is as low as 78% when a solar cell prototype is fabricated using the silicon polycrystalline thin plate 3 according to the background technology due to screen breakage and electrode disconnection. On the other hand, in the case of the silicon polycrystalline thin plate 3 in the present embodiment in which dripping is suppressed, the yield can be improved to 92%. In addition, due to the influence of electrode blurring, the solar cell conversion efficiency when the solar cell trial production is performed with the silicon polycrystalline thin plate 3 according to the background art is as low as 11%. In the case of the crystal thin plate 3, the efficiency can be improved to 13%.
[0083]
(Embodiment 6)
Next, a thin plate manufacturing apparatus and a thin plate manufacturing method in the present embodiment will be described with reference to FIG. FIG. 9 is a schematic diagram showing a track step of the substrate 2 when the thin plate manufacturing apparatus in the present embodiment is used.
[0084]
The configuration of the thin plate manufacturing apparatus in the present embodiment is the same as that of the thin plate manufacturing apparatus 1000 in the first embodiment. The difference from the first embodiment is the tilt angle of the substrate 2 when the substrate 2 is taken out from the melt 6. Accordingly, only the trajectory step of the substrate 2 in the present embodiment will be described here.
[0085]
(Orbit step of substrate 2)
First, of the trajectory steps of the substrate 2 shown in FIG. 5, from the first step to the third step, the substrate 2 is immersed in the silicon melt 6 by the same control. Thereafter, the following trajectory steps shown in FIG. 9 are adopted.
[0086]
Fourth step: The tilting motor 202 is controlled such that the traveling direction side of the substrate 2 faces upward and the substrate tilt angle is [θ1 °]. The horizontal movement motor 201 and the vertical movement motor 7 are controlled so that the horizontal movement speed and the vertical movement speed are constant (100 mm / second and 10 mm / second respectively), and the substrate 2 is removed from the silicon melt 6. Take out.
[0087]
Fifth step: The tilting motor 202 is controlled so that the substrate tilt angle becomes 45 ° when the end portion escapes. Thereafter, the vertical movement motor 7 is controlled to raise the substrate 2 by 30 mm in the vertical direction at 100 mm / second.
[0088]
Sixth step: Next, similarly to the trajectory step of the substrate 2 shown in FIG. 5, the tilting motor 202 is controlled to return the substrate 2 to the horizontal state, and the horizontal movement motor 201 is controlled to control the substrate 2. Transport to the unloading position. Note that θ2 in FIG. 9 is 5.7 °. Here, θ2 means an angle formed between the movement vector of the substrate and the melt surface. The size of the substrate 2 is 100 mm square as in the first embodiment.
[0089]
Here, the substrate inclination angle [θ1 °] is set to three patterns of 1.4 ° (nearly horizontal), 5.7 ° (parallel to the substrate movement vector), and 10 ° (similar to the first embodiment). In the case of (1), the dipping step was performed, and the number of protrusions generated on the surface of the silicon polycrystalline thin plate 3 was compared. The results are shown in FIG.
[0090]
As is clear from FIG. 10, the number of protrusions generated on the surface of the silicon polycrystalline thin plate 3 increases as the substrate tilt angle [θ1 °] decreases (closer to the horizontal). This is considered to be based on the following reasons.
[0091]
In the case of θ1 <θ2, when the surface of the substrate 2 comes out of the silicon melt 6, it escapes while pulling the melt 6 (the meniscus position (interface between the melt and the substrate) advances in the direction opposite to the substrate traveling direction).
[0092]
When θ1 = θ2, the meniscus position (interface between the melt and the substrate) does not change.
In the case of θ1> θ2, when the surface of the substrate 2 comes out of the silicon melt 6, it escapes while pushing the melt 6 (the meniscus position (interface between the melt and the substrate) advances in the forward direction and the forward direction of the substrate).
[0093]
When θ1 <θ2, when viewed from the substrate and the grown thin plate, the melt proceeds in a direction away from the substrate, so that the melt cannot apply pressure to the substrate, and the melt tends to remain on the substrate surface. become. As a result, it is considered that the melt remaining on the surface of the substrate becomes a protrusion due to surface tension.
[0094]
On the other hand, in the case of θ1> θ2, the melt always proceeds in the direction of colliding (collision) with the substrate, so that the melt always applies pressure to the substrate. As a result, it is considered that the melt hardly remains on the surface of the substrate, and the protrusions are reduced.
[0095]
(Embodiment 7)
Using the polycrystalline silicon thin plate 3 manufactured by the thin plate manufacturing apparatus and the thin plate manufacturing method in the sixth embodiment, a solar cell is prototyped by the same prototype process (first process to eighth process) as in the fifth embodiment. did. FIG. 10 shows the number of protrusions prototyped, solar cell yield, and conversion efficiency when the substrate tilt angle [θ1 °] of the orbit step of the substrate 2 is 1.4 °, 5.7 °, and 10 °.
[0096]
When the substrate tilt angle [θ1 °] is 10 °, since the number of protrusions is 0, the printing at the time of electrode formation can be performed uniformly. However, when [θ1 °] is 1.4 °, the silicon polycrystalline thin plate 3 The print electrode partially bleeds or breaks due to the influence of the protrusions (20 occurrences). The yield of non-defective products (solar cell prototype production yield) is as low as 84% when a solar cell prototype is produced due to electrode disconnection. On the other hand, in the case of the silicon polycrystalline thin plate 3 in which the protrusions are suppressed, the yield can be improved to 92%. In addition, due to the influence of electrode blurring, the solar cell conversion efficiency when the solar cell trial production is performed with the silicon polycrystalline thin plate 3 according to the background art is as low as 12%, but in the case of the silicon polycrystalline thin plate 3 with suppressed protrusions. Can improve the efficiency to 13%.
[0097]
(Embodiment 8)
Next, the thin plate manufacturing apparatus according to the present embodiment will be described with reference to FIGS. FIG. 11 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 4000 in the present embodiment, FIG. 12 is an enlarged view of the substrate transport mechanism 1 described later, and FIG. 13 shows the trajectory of the substrate transport mechanism 1. FIG.
[0098]
(Overall structure of thin plate manufacturing apparatus 4000)
First, with reference to FIG. 11 and FIG. 12, the whole structure of the thin plate manufacturing apparatus 4000 in this Embodiment is demonstrated. The basic structure of the thin plate manufacturing apparatus 4000 is the same as that of the thin plate manufacturing apparatus 1000 described in the first embodiment, and the difference is in the structure of the substrate transport mechanism 1. Therefore, here, the same or corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.
[0099]
A substrate temperature control means 60 for controlling the surface temperature of the substrate 2 (cooling to a predetermined temperature or raising the temperature) is provided before the substrate 2 is immersed in the melt 6. By providing the substrate temperature control means 60, it is possible to optimize the substrate surface temperature when a thin plate is formed on the surface of the substrate 2. As the substrate temperature control means 60, when the heat transfer member itself is heated by using a hollow heat transfer member wound in a coil shape, the surface temperature of the substrate 2 can be raised, By passing the cooling medium through the heat transfer member, the surface temperature of the substrate 2 can be cooled.
[0100]
The substrate transport mechanism 1 according to the present embodiment adjusts the substrate fixing member 101 for fixing the substrate 2 and the horizontal movement position of the surface of the substrate 2 with respect to the liquid surface of the melt 6. In order to adjust the vertical movement position of the substrate fixing member 101 in order to adjust the horizontal movement position adjusting means for adjusting the horizontal movement position and the vertical movement position of the surface of the substrate 2 with respect to the liquid surface of the melt 6. Vertical movement position adjusting means, and a substrate tilting means for adjusting the tilt angle of the substrate fixing member 101 in order to tilt the surface of the substrate 2 with respect to the liquid surface of the melt 6.
[0101]
First, the horizontal movement position adjusting means includes a horizontal guide rail 70 extending in the horizontal direction 104 and a horizontal movement unit 404 provided to be movable along the horizontal guide rail 70. A driving device for moving on the horizontal guide rail 70 is built in the horizontal moving unit 404.
[0102]
Further, as the vertical movement position adjusting means, the horizontal movement unit 404 is supported so as to be slidable in the vertical direction 105, and the vertical direction guide shaft 403 to which the substrate fixing member 101 is connected at the lower end portion, and the horizontal direction guide rail 70. And a vertical guide rail 80 for guiding the moving position of the upper end portion of the vertical guide shaft 403. A lower end portion of the vertical guide shaft 403 is connected to the substrate fixing member 101 by a pivot portion 403a so as to be rotatable, and an upper end portion guided by the vertical guide rail 80 is connected to an upper end portion of the vertical guide shaft 403. A guide roller 403b is provided.
[0103]
Further, the substrate tilting means is provided along the horizontal guide rail 70 and the tilt guide shaft 402 which is supported by the horizontal movement unit 404 so as to be slidable in the vertical direction and to which the substrate fixing member 101 is connected at the lower end. And a tilt guide rail 90 for guiding the upper end portion of the tilt guide shaft 402. A lower end portion of the tilt guide shaft 402 is connected to the substrate fixing member 101 by a pivot portion 402a so as to be rotatable, and an upper end guide roller 402b guided by the tilt guide rail 90 is connected to an upper end portion of the tilt guide shaft 402. Is provided.
[0104]
(Track of substrate transport mechanism 1)
Next, a track for immersing the substrate 2 in the melt 6 in the substrate transport mechanism 1 will be described with reference to FIG. In the thin plate manufacturing apparatus 4000 having the above-described configuration, the vertical guide shaft 403 and the tilt guide shaft 402 are moved in the horizontal direction following the horizontal movement unit 404 by moving the horizontal movement unit 404 along the horizontal direction guide rail 70. It becomes possible to move to. Further, the upper end guide rollers 403b and 402a of the vertical guide shaft 403 and the tilt guide shaft 402 are guided in the moving direction by the vertical guide rail 80 and the tilt guide rail 90, respectively. The position of the guide shaft 402 can be determined following.
[0105]
The positions of the vertical guide shaft 403 and the tilt guide shaft 402 are determined based on the trajectory of the vertical guide rail 80 and the tilt guide rail 90 corresponding to the height position and tilt angle of the substrate fixing member 101 to be selected. Selected. As a result, as shown in FIG. 13, it is possible to give an optimal trajectory to the substrate fixing member 101 and the substrate 2.
[0106]
(Function and effect)
As described above, according to thin plate manufacturing apparatus 4000 in the present embodiment, horizontal movement position is not provided in each of substrate movement mechanism 1 as a horizontal movement position adjustment means, a vertical movement position adjustment means, and a substrate tilting means. Since it is possible to adopt a structure in which a driving device is provided only in the horizontal movement unit 404 that is an adjusting means, it is possible to simplify the structure of the substrate transport mechanism 1 shown in the first and second embodiments.
[0107]
(Embodiment 9)
Next, with reference to FIG. 14 and FIG. 15, the thin plate manufacturing apparatus in this Embodiment is demonstrated. FIG. 14 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 5000 in the present embodiment, and FIG. 15 is a diagram showing the trajectory of the substrate transport mechanism 1.
[0108]
(Overall configuration of thin plate manufacturing apparatus 5000)
First, with reference to FIG. 14 and FIG. 15, the whole structure of the thin plate manufacturing apparatus 5000 in this Embodiment is demonstrated. The basic structure of the thin plate manufacturing apparatus 5000 is the same as that of the thin plate manufacturing apparatus 4000 described in the eighth embodiment. The difference is that the horizontal guide rail and the vertical guide rail are shared, A vertical guide rail 75 is employed, and the upper end of the vertical guide shaft 403 is connected to the horizontal movement unit 404. Therefore, the same or corresponding parts as those of the thin plate manufacturing apparatus 4000 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0109]
(Track of substrate transport mechanism 1)
Next, referring to FIG. 15, similarly to the track of the substrate 2 in the substrate transport mechanism 1 in the eighth embodiment, in the thin plate manufacturing apparatus 5000 in the present embodiment, along the horizontal and vertical guide rails 75. By moving the horizontal movement unit 404, the vertical guide shaft 403 and the tilt guide shaft 402 can be moved in the horizontal direction following the horizontal movement unit 404. Further, since the movement direction of the upper end guide roller 402b of the tilt guide shaft 402 is guided by the tilt guide rail 90, the position of the tilt guide shaft 402 can be determined passively.
[0110]
Note that the positions of the vertical guide shaft 403 and the tilt guide shaft 402 are determined according to the height position and tilt angle of the substrate fixing member 101 to be selected, The track of the rail 90 is selected. As a result, as shown in FIG. 15, it is possible to give an optimal trajectory to the substrate fixing member 101 and the substrate 2.
[0111]
(Function and effect)
As described above, according to the thin plate manufacturing apparatus 5000 according to the present embodiment, the substrate transfer mechanism 1 is provided with a horizontal movement position without providing a driving device in each of the horizontal movement position adjustment means, the vertical movement position adjustment means, and the substrate tilting means. Since it is possible to adopt a structure in which a driving device is provided only in the horizontal movement unit 404 that is an adjusting means, it is possible to simplify the structure of the substrate transport mechanism 1 shown in the first and second embodiments.
[0112]
(Embodiment 10)
Next, a thin plate manufacturing apparatus according to the present embodiment will be described with reference to FIGS. FIG. 16 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 6000 in the present embodiment, FIG. 17 is a diagram showing the forward path of the substrate transport mechanism 1, and FIG. 18 is the return path of the substrate transport mechanism 1. FIG.
(Overall configuration of thin plate manufacturing apparatus 6000)
First, with reference to FIG. 16 and FIG. 17, the whole structure of the thin plate manufacturing apparatus 6000 in this Embodiment is demonstrated. The basic structure of the thin plate manufacturing apparatus 6000 is the same as that of the thin plate manufacturing apparatus 4000 described in the eighth embodiment. The difference is that the horizontal guide rail, the vertical guide rail, and the tilt guide rail are shared. The horizontal / vertical / tilting direction guide rails 76 are employed, and the upper ends of the vertical direction guiding shaft 403 and the tilting guiding shaft 402 are connected to the horizontal moving unit 404. Therefore, the same or corresponding parts as those of the thin plate manufacturing apparatus 4000 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0113]
(Track of substrate transport mechanism 1)
Next, referring to FIG. 17, similarly to the track of the substrate 2 in the substrate transport mechanism 1 in the eighth embodiment, the thin plate manufacturing apparatus 6000 in the present embodiment also uses the horizontal / vertical / tilting direction guide rail 76. By moving the horizontal movement unit 404 along the horizontal movement unit 404, the vertical guide shaft 403 and the tilting guide shaft 402 can be moved in the horizontal direction following the horizontal movement unit 404.
[0114]
For determining the positions of the vertical guide shaft 403 and the tilt guide shaft 402, the fixed state to the horizontal moving unit 404 is selected in accordance with the height position and tilt angle of the substrate fixing member 101 to be selected. As a result, as shown in FIG. 17, it is possible to give an optimal forward trajectory to the substrate fixing member 101 and the substrate 2. As shown in FIG. 18, it is possible to give an optimal return path to the board fixing member 101 and the board 2.
[0115]
(Function and effect)
As described above, according to thin plate manufacturing apparatus 6000 in the present embodiment, horizontal movement position is not provided in each of substrate movement mechanism 1 as a horizontal movement position adjustment means, a vertical movement position adjustment means, and a substrate tilting means. Since it is possible to adopt a structure in which a driving device is provided only in the horizontal movement unit 404 that is an adjusting means, it is possible to simplify the structure of the substrate transport mechanism 1 shown in the first and second embodiments.
[0116]
(Embodiment 11)
Next, with reference to FIG. 19 and FIG. 20, the thin plate manufacturing apparatus in this Embodiment is demonstrated. FIG. 19 is a schematic diagram showing the overall configuration of the thin plate manufacturing apparatus 7000 in the present embodiment, and FIG. 20 is a diagram showing the trajectory of the substrate transport mechanism 1.
[0117]
(Overall configuration of thin plate manufacturing apparatus 7000)
First, with reference to FIG. 19 and FIG. 20, the whole structure of the thin plate manufacturing apparatus 7000 in this Embodiment is demonstrated. The basic structure of the thin plate manufacturing apparatus 7000 is the same as that of the thin plate manufacturing apparatus 4000 described in the eighth embodiment, and the difference is that the vertical and tilting structures have a common structure of the vertical guide rail and the tilting guide rail. The direction guide rail 77 is employed. Therefore, the same or corresponding parts as those of the thin plate manufacturing apparatus 4000 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0118]
(Track of substrate transport mechanism 1)
Next, referring to FIG. 20, the thin plate manufacturing apparatus 7000 in the present embodiment also moves horizontally along the horizontal guide rail 70 in the same manner as the track of the substrate 2 in the substrate transport mechanism 1 in the eighth embodiment. By moving the unit 404, the vertical guide shaft 403 and the tilt guide shaft 402 can be moved in the horizontal direction following the horizontal movement unit 404. Further, the upper end guide rollers 403 b and 402 a of the vertical guide shaft 403 and the tilt guide shaft 402 are guided in the moving direction by the vertical / tilt direction guide rail 77, so that the vertical guide shaft 403 and the tilt guide shaft 402 The position can be determined following.
[0119]
In determining the positions of the vertical guide shaft 403 and the tilt guide shaft 402, the trajectory of the vertical / tilt direction guide rail 77 is selected in accordance with the height position and tilt angle of the substrate fixing member 101 to be selected. . As a result, an optimum trajectory can be given to the substrate fixing member 101 and the substrate 2 as shown in FIG.
[0120]
(Function and effect)
As described above, according to the thin plate manufacturing apparatus 5000 according to the present embodiment, the substrate transfer mechanism 1 is provided with a horizontal movement position without providing a driving device in each of the horizontal movement position adjustment means, the vertical movement position adjustment means, and the substrate tilting means. Since it is possible to adopt a structure in which a driving device is provided only in the horizontal movement unit 404 that is an adjusting means, it is possible to simplify the structure of the substrate transport mechanism 1 shown in the first and second embodiments.
[0121]
In each of the above embodiments, the linear rail constituting the horizontal movement axis 8, the horizontal guide rail 70, the vertical guide rail 80, the tilting guide rail 90, the horizontal / vertical guide rail 75, the horizontal / vertical / Both ends of the tilt direction guide rail 76 and the vertical / tilt direction guide rail 77 are omitted, but it is also possible to adopt a configuration in which the substrate transport mechanism 1 circulates by forming an endless track in each rail. It is also possible to adopt a configuration in which the substrate transport mechanism 1 is mounted from one end of each rail and the substrate transport mechanism 1 is detached from the other end.
[0122]
In each of the above embodiments, the case where the silicon polycrystalline thin plate 3 is manufactured has been described. As a melt, a semiconductor such as germanium, gallium, arsenic, indium, phosphorus, boron, antimony, zinc, or tin is used. When a material or a metal material such as aluminum, nickel, or iron is used, a similar effect can be obtained even in a thin plate corresponding to the molten material used.
[0123]
Each embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
[0124]
【The invention's effect】
According to the thin plate manufacturing apparatus and the thin plate manufacturing method of the present invention, by controlling the trajectory of the substrate, the relative relationship between the substrate (and the thin plate growing on the substrate) and the melt can be optimized. It becomes possible to improve the quality and shape (preventing dripping and generation of protrusions) and the mass productivity of the thin plate.
[0125]
According to another aspect of the thin plate manufacturing apparatus of the present invention, the horizontal movement position can be provided without providing a driving device for each of the horizontal movement position adjustment means, the vertical movement position adjustment means, and the substrate tilting means as the substrate transport mechanism. Since it is possible to adopt a structure in which a driving device is provided only in the adjusting means, the structure of the substrate transport mechanism can be simplified.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to a first embodiment.
FIG. 2 is an enlarged view of a substrate transport mechanism 1. FIG.
FIG. 3 is a diagram showing a part of a control block of the thin plate manufacturing apparatus according to the first embodiment.
FIG. 4 is a schematic view showing a method for removing a silicon polycrystalline thin plate 3 grown from a substrate 2;
FIG. 5 is a schematic diagram showing orbit steps of a substrate 2 for growing a silicon polycrystalline thin plate 3;
6 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to Embodiment 2. FIG.
7 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to Embodiment 3. FIG.
FIG. 8 is a diagram showing the dripping height, the solar cell trial production yield, and the solar cell exchange efficiency in the solar cell trial production using the silicon polycrystalline thin plate 3 according to the first to fourth embodiments and the background art. is there.
FIG. 9 is a schematic diagram showing the fourth and fifth steps of the orbit step of the substrate 2 for growing the silicon polycrystalline thin plate 3 in the sixth embodiment.
FIG. 10 is a diagram showing the number of protrusions, solar cell prototype yield, and solar cell replacement efficiency in a solar cell prototype manufactured using the silicon polycrystalline thin plate 3 in the sixth embodiment.
FIG. 11 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to an eighth embodiment.
12 is an enlarged view of a substrate transport mechanism 1 according to an eighth embodiment. FIG.
13 is a diagram showing a trajectory of the substrate transport mechanism 1 according to Embodiment 8. FIG.
14 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to Embodiment 9. FIG.
FIG. 15 is a diagram showing a trajectory of the substrate transport mechanism 1 according to the ninth embodiment.
FIG. 16 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus according to a tenth embodiment.
FIG. 17 is a diagram showing a forward trajectory of the substrate transport mechanism 1 according to the tenth embodiment.
FIG. 18 is a diagram illustrating a return path of the substrate transport mechanism 1 according to the tenth embodiment.
FIG. 19 is a schematic diagram showing an overall configuration of a thin plate manufacturing apparatus in an eleventh embodiment.
FIG. 20 is a diagram showing a trajectory of the substrate transport mechanism 1 according to the eleventh embodiment.
FIG. 21 is a diagram showing a schematic structure of a “crystal sheet manufacturing apparatus” disclosed in the background art.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate conveyance mechanism, 3 Silicon polycrystal thin plate, 4 Heating mechanism, 5 Crucible, 6 Melt, 7 Vertical movement motor, 8 Horizontal movement axis, 9 Vertical movement axis, 10 Thermal shielding mechanism, 11 Substrate conveyance mechanism , 16 stage, 16a suction hole, 16b arm, 60 substrate temperature control means, 70 horizontal direction guide rail, 75 horizontal / vertical direction guide rail, 76 horizontal / vertical / tilt direction guide rail, 77 vertical / tilt direction guide rail, 80 Vertical guide rail, 90 Tilt guide rail, 101 Substrate fixing member, 102 Substrate tilt axis, 103 units, 104 Horizontal direction, 105 Vertical direction, 106 Elevating direction, 111 Substrate tilting motor, 112 Telescopic arm, 200 PC, 201 Horizontal movement motor, 202 Tilt motor, 402 Tilt guide shaft, 402a, 403a Axis 402b, 403b upper portion guide rollers, 403 vertical guide shaft, 404 a horizontal movement unit, 1000,2000,3000,4000,5000,6000,7000 sheet manufacturing apparatus.

Claims (5)

A thin plate manufacturing apparatus for forming a thin plate on the substrate surface by immersing the substrate held in the substrate transport mechanism in a melt,
The substrate transport mechanism is
A substrate fixing means for fixing the substrate;
A horizontal movement position adjusting means for adjusting a horizontal movement position of the substrate fixing means in order to adjust a horizontal movement position of the substrate surface relative to the liquid level of the melt;
A vertical movement position adjusting means for adjusting a vertical movement position of the substrate fixing means in order to adjust a vertical movement position of the substrate surface with respect to a liquid level of the melt;
A substrate tilting means for adjusting the tilt angle of the substrate fixing means to tilt the substrate surface with respect to the liquid surface of the melt;
With
The horizontal movement position adjusting means is
A horizontal guide rail extending linearly in the horizontal direction;
A horizontal movement unit provided movably along the horizontal guide rail,
The vertical movement position adjusting means includes
In the horizontal movement unit, a vertical guide shaft that is supported so as to be slidable in the vertical direction and to which the substrate fixing means is coupled to a lower end portion;
Wherein provided along the horizontal direction the guide rails, for guiding the movement position of the upper end of the vertical guide shaft extends in the horizontal direction, above the liquid surface of the melt, the liquid surface of the melt A vertical guide rail including a region that protrudes toward the
The substrate tilting means is
In the horizontal movement unit, a tilt guide shaft that is supported so as to be slidable in the vertical direction and to which the substrate fixing means is coupled to a lower end portion;
It is provided along the horizontal guide rail and extends in the horizontal direction so as to guide the upper end portion of the tilt guide shaft. A thin plate manufacturing apparatus having a tilt guide rail including a region to be . A thin plate manufacturing apparatus for forming a thin plate on the substrate surface by immersing the substrate held in the substrate transport mechanism in a melt,
The substrate transport mechanism is
A substrate fixing means for fixing the substrate;
A horizontal movement position adjusting means for adjusting a horizontal movement position of the substrate fixing means in order to adjust a horizontal movement position of the substrate surface relative to the liquid level of the melt;
A vertical movement position adjusting means for adjusting a vertical movement position of the substrate fixing means in order to adjust a vertical movement position of the substrate surface with respect to a liquid level of the melt;
A substrate tilting means for adjusting the tilt angle of the substrate fixing means to tilt the substrate surface with respect to the liquid surface of the melt;
With
The horizontal movement position adjusting means is
Horizontal and vertical guide rails that extend in the horizontal direction and include a region that protrudes toward the liquid surface side of the melt above the liquid surface of the melt ,
A horizontal movement unit provided movably along the horizontal / vertical direction guide rail,
The vertical movement position adjusting means includes
An upper end is connected to the horizontal movement unit, and a vertical guide shaft is connected to the lower end of the substrate fixing means.
The substrate tilting means is
A tilt guide shaft that is slidably supported in the vertical direction and that is connected to the substrate fixing means at the lower end;
It is provided along the horizontal and vertical guide rails and extends in the horizontal direction to guide the upper end portion of the vertical shaft, and toward the liquid surface side of the melt above the liquid surface of the melt. A thin plate manufacturing apparatus having a tilt guide rail including a convex region . A thin plate manufacturing apparatus for forming a thin plate on the substrate surface by immersing the substrate held in the substrate transport mechanism in a melt,
The substrate transport mechanism is
A substrate fixing means for fixing the substrate;
A horizontal movement position adjusting means for adjusting a horizontal movement position of the substrate fixing means in order to adjust a horizontal movement position of the substrate surface relative to the liquid level of the melt;
A vertical movement position adjusting means for adjusting a vertical movement position of the substrate fixing means in order to adjust a vertical movement position of the substrate surface with respect to a liquid level of the melt;
A substrate tilting means for adjusting the tilt angle of the substrate fixing means to tilt the substrate surface with respect to the liquid surface of the melt;
With
The horizontal movement position adjusting means is
Horizontal, vertical, and tilting direction guide rails that extend in the horizontal direction and include a region that protrudes toward the liquid surface side of the melt above the liquid surface of the melt ,
A horizontal movement unit provided movably along the horizontal rail,
The vertical movement position adjusting means includes
An upper end is connected to the horizontal movement unit, and a vertical guide shaft is connected to the lower end of the substrate fixing means.
The substrate tilting means is
A thin plate manufacturing apparatus having a tilt guide shaft having an upper end connected to the horizontal movement unit and a substrate fixing means connected to the lower end. A thin plate manufacturing apparatus for forming a thin plate on the substrate surface by immersing the substrate held in the substrate transport mechanism in a melt,
The substrate transport mechanism is
A substrate fixing means for fixing the substrate;
A horizontal movement position adjusting means for adjusting a horizontal movement position of the substrate fixing means in order to adjust a horizontal movement position of the substrate surface relative to the liquid level of the melt;
A vertical movement position adjusting means for adjusting a vertical movement position of the substrate fixing means in order to adjust a vertical movement position of the substrate surface with respect to a liquid level of the melt;
A substrate tilting means for adjusting the tilt angle of the substrate fixing means to tilt the substrate surface with respect to the liquid surface of the melt;
With
The horizontal movement position adjusting means is
A horizontal guide rail extending linearly in the horizontal direction;
A horizontal movement unit provided movably along the horizontal rail,
The vertical movement position adjusting means includes
In the horizontal movement unit, a vertical guide shaft that is supported so as to be slidable in the vertical direction and to which the substrate fixing means is coupled to a lower end portion;
In order to guide the movement position of the upper end portion of the vertical guide shaft provided along the horizontal rail, it extends in the horizontal direction and faces the liquid surface side of the melt above the liquid surface of the melt. Vertical and tilting direction guide rails including a convex region ,
The substrate tilting means is
In the horizontal movement unit, a thin plate having a tilt guide shaft that is supported so as to be slidable in the vertical direction, the substrate fixing means is connected to a lower end portion, and a movement position of the upper end portion is guided by the vertical / tilt direction guide rail Manufacturing equipment.   The thin plate manufacturing apparatus according to any one of claims 1 to 4, further comprising substrate temperature control means for controlling the temperature of the substrate surface before immersing the substrate in the melt.

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