JP3945482B2 - Semiconductor sealing resin composition and semiconductor device using the same - Google Patents

Description

  The invention of this application relates to a semiconductor sealing resin composition used for sealing a semiconductor element and a semiconductor device sealed using the semiconductor sealing resin composition.

  In recent years, with increasing speed and integration of semiconductor devices, package wiring has been miniaturized.

  The semiconductor device is usually laser-marked with the manufacturer, product name, lot number, etc., and the resin composition for semiconductor encapsulation often uses carbon black as a black pigment in order to improve the laser markability. (For example, Patent Documents 1 and 2).

However, since carbon black has conductivity, there is a problem in that the semiconductor device causes poor conduction when it enters between fine wirings. Therefore, there is an urgent need to develop a resin composition for semiconductor encapsulation that has high laser markability and high insulation that can be applied to sealing fine wiring.
JP 2001-123047 JP 2001-247747 A

Therefore, the invention of this application has been made in view of the circumstances as described above, solves the problems of the prior art, and has at least a laser mark property equivalent to that of a conventional sealing resin composition, It is an object of the present invention to provide a new technical means related to a resin composition for encapsulating a semiconductor without the risk of causing poor conduction.

The invention of this application, as to solve the above problems, the first, epoxy resins, phenolic resins, for semi-conductor sealing of an inorganic filler and 0.05 to 1% by weight of the fullerene containing as essential components A semiconductor device is provided which is sealed with the resin composition.

The invention of this application also provides the semiconductor device described above, wherein the fullerene is C60 and / or C70.

  The resin composition for semiconductor encapsulation of the invention of this application comprises an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene as essential components. By using fullerene having no properties as a pigment, a resin composition for semiconductor encapsulation having excellent laser insulating properties and excellent conductivity and moldability, which has high laser markability as usual, is obtained. be able to.

  In addition, since the semiconductor device of the invention of this application is manufactured by sealing molding using the above-described resin composition for sealing a semiconductor, a high laser mark property is maintained, and a space between wirings is fine. Even in this case, there will be no poor conduction.

  The resin composition for encapsulating a semiconductor according to the invention of this application contains an epoxy resin, a phenol resin, an inorganic filler, and fullerene as a pigment as essential components, and the fullerene content is 0.05 to 1% by weight. It is characterized by being.

  In the resin composition for semiconductor encapsulation of the invention of this application, the epoxy resin may be various epoxy resins generally used for semiconductor encapsulation, and is not particularly limited. For example, an o-cresol novolac type epoxy resin, a biphenyl type epoxy resin, a dicyclopentadiene type epoxy resin, a bisphenol type epoxy resin, a bromine-containing epoxy resin, and the like can be given. These are not limited to one type and may be used in combination.

  In the resin composition for semiconductor encapsulation of the invention of this application, the phenol resin is contained as a curing agent, and various types generally used for semiconductor encapsulation can be applied. Specific examples include phenol novolac resins, dicyclopentadiene type phenol resins, phenol aralkyl resins, cresol novolac resins, naphthol aralkyl resins, and the like, naphthalene skeleton-containing phenol resins, and polyhydric phenol compounds. These are not limited to one type, and a plurality of types may be used in combination.

  Moreover, the inorganic filler should just be generally used for semiconductor sealing, and the kind is not specifically limited. Examples thereof include fused silica, crystalline silica, alumina, silicon nitride, and aluminum nitride.

  Further, the fullerene contained as an essential component in the semiconductor sealing resin composition of the invention of this application is a carbon allotrope consisting of only carbon atoms, like graphite and diamond, but is an insulator unlike graphite. Therefore, by adding 0.05 to 1% by weight of this as a black pigment to replace carbon black with respect to the total amount of the resin composition for semiconductor encapsulation, it has a laser mark property equivalent to that of the prior art and high insulation properties. A resin composition for encapsulating a semiconductor is obtained. When the fullerene content is less than 0.05% by weight, a sufficient coloring effect as a pigment cannot be obtained, and the laser mark property is lowered, which is not preferable. Further, when the content of fullerene is more than 1% by weight, the viscosity of the resin composition for semiconductor encapsulation is increased, and the fluidity is lowered. Absent.

  The kind of fullerene used is not particularly limited, and various kinds of C20 or more, for example, C20, C24, C50, C60, C70, C76, C84, etc. can be applied. Among them, C60 and C70 are known to have high stability as spherical compounds, and since both are relatively easily available, they are preferably used as pigments in the resin composition for semiconductor encapsulation of the invention of this application. it can. Further, the fullerene is not limited to one kind, and may be a mixture of plural kinds such as C60 and C70.

  As described above, the resin composition for semiconductor encapsulation of the invention of this application contains an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene as essential components. In addition, various components generally used for semiconductor encapsulation may be contained. For example, as an effect accelerator, organic phosphorus compounds such as triphenylphosphine (TPP) and trimethylphosphine, imidazoles such as 2-methylimidazole, 2-phenyl-4-methylimidazole and 2-phenylimidazole, 1,8- Diazabicyclo (5,4,0) undecene-7, triethanolamine, benzyldimethylamine, etc., release agent, carnauba wax, etc., flame retardant, phosphorus flame retardant, bromine compound, antimony trioxide, etc., silane coupling Examples of the agent include γ-glycidoxypropyltriethoxysilane.

  The resin composition for semiconductor encapsulation of the invention of this application as described above is blended with the above-mentioned epoxy resin, phenol resin, inorganic filler, fullerene, and various components as necessary, and this is mixed with a mixer or blender. After mixing uniformly, it can prepare by kneading | mixing with a heating roll, a kneader, etc. Here, the blending order of the above components is not particularly limited, and the kneaded product can be cooled and solidified as necessary, pulverized into pellets or powder, or used as a tablet. it can.

  And a semiconductor device can be produced by carrying out sealing molding using the resin composition for semiconductor sealing prepared in this way. Specifically, a semiconductor device in which a semiconductor element is sealed with a sealing resin composition is obtained by setting a lead frame on which a semiconductor element is mounted in a transfer molding die and performing transfer molding. In the semiconductor device thus obtained, laser marking can be performed on the surface, and no conduction failure occurs even when the wiring is fine due to high integration.

  Hereinafter, the present invention will be described in more detail with reference to examples. Of course, the present invention is not limited to the following examples, and it goes without saying that various aspects are possible in detail.

<Examples 1-3>
(1) Preparation of resin composition for semiconductor encapsulation Biphenyl type epoxy resin (“YX4000H” manufactured by Japan Epoxy Resin Co., Ltd.), phenol novolac resin (“PSM6200” manufactured by Gunei Chemical Industry Co., Ltd.), fused silica, fullerene C60 (manufactured by Frontier Carbon Co., Ltd.), triphenylphosphine (TPP), carnauba wax, and mercaptosilane coupling agent were blended in the blending amounts shown in Table 1, and this was mixed and homogenized for 30 minutes with a blender. Thereafter, the mixture was kneaded and melted with a kneader heated to 80 ° C., extruded, cooled, and then pulverized to a predetermined particle size by a pulverizer to prepare a semiconductor sealing resin composition as a granular material.

(2) Evaluation of laser mark property Transfer molding of a 50 mmφ molded product was performed using the resin composition for semiconductor encapsulation obtained in the above (1), and laser marking was performed using a YAG laser. Visually evaluated as ◎ for those with particularly good printability, ○ for those with good printability, and × for those with poor printability.

(3) Evaluation of conduction failure The insulation property of the resin composition for semiconductor encapsulation was evaluated by 16DIP TEG.

  The case where no poor conduction was observed and the insulation property was high was evaluated as “、”, and the case where poor conduction was observed was evaluated as “x”.

(4) Evaluation of fluidity The fluidity of the obtained resin composition for encapsulating a semiconductor was measured by actual molding using a 28 mm square LQFP single die.

  Those having high fluidity were evaluated as ◎, those having good fluidity as ○, and those having poor fluidity as ×.

  The above evaluation results are shown in Table 1.

<Example 4>
Instead of biphenyl type epoxy resin, o-cresol novolac type epoxy resin (“ESCL195XL” manufactured by Sumitomo Chemical Co., Ltd.) is used as an epoxy resin, and brominated epoxy resin (“ESB400” manufactured by Sumitomo Chemical Co., Ltd.) is used as a flame retardant. )) And antimony trioxide were added, and a resin composition for semiconductor encapsulation was prepared in the same manner as in Example 1 with the blending amounts shown in Table 1.

  The obtained resin composition for semiconductor encapsulation was evaluated in the same manner as in Example 1, and the results are shown in Table 1.

<Comparative Example 1>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that carbon black was used instead of fullerene, and the laser mark property, poor conduction, and fluid were evaluated. The evaluation results are shown in Table 1.

<Comparative example 2>
A semiconductor sealing resin composition was prepared in the same manner as in Example 4 except that carbon black was used instead of fullerene, and the laser mark property, poor conduction, and fluid were evaluated. The evaluation results are shown in Table 1.

<Comparative Example 3>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that the fullerene content was 0.02 wt%, and the laser mark property, poor conduction, and fluid were evaluated.

  The evaluation results are shown in Table 1.

<Comparative example 4>
A semiconductor sealing resin composition was prepared in the same manner as in Example 1 except that the fullerene content was 1.3% by weight, and the laser mark property, poor conduction, and fluid were evaluated.

  The evaluation results are shown in Table 1.

  As seen in Table 1, a high laser mark is obtained in the resin composition for semiconductor encapsulation (Examples 1 to 4) containing an epoxy resin, a phenol resin, an inorganic filler, and 0.05 to 1% by weight of fullerene. It was confirmed that the high insulation property without any poor conduction was exhibited. Moreover, the fluidity | liquidity of the resin composition for semiconductor sealing was also favorable.

  On the other hand, in the semiconductor sealing resin composition using carbon black as the black pigment (Comparative Examples 1 and 2), poor conduction occurred.

  Further, even when fullerene is used as a black pigment, when the content in the resin composition for semiconductor encapsulation is less than 0.05% by weight (Comparative Example 3), there is no poor conduction and high fluidity is obtained. Although it was maintained, it became clear that the laser mark property deteriorated.

  Further, in the resin composition for semiconductor encapsulation having a fullerene content of more than 1% by weight (Comparative Example 4), high laser mark property and insulating property were obtained, but fluidity was remarkably lowered and moldability was improved. It was shown to get worse.

  As described above in detail, the present invention provides a resin composition for encapsulating a semiconductor having high laser mark properties and no poor conduction.

Claims (2)

Epoxy resin, the semiconductor device characterized by comprising sealed with a phenolic resin, encapsulating resin composition containing an inorganic filler and 0.05 to 1% by weight of fullerene as an essential component. 2. The semiconductor device according to claim 1, wherein the fullerene is C60 and / or C70.