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JP2003292732A - Thermosetting resin composition, epoxy resin molding material and semiconductor device - Google Patents

Thermosetting resin composition, epoxy resin molding material and semiconductor device

Info

Publication number
JP2003292732A
JP2003292732A JP2002097549A JP2002097549A JP2003292732A JP 2003292732 A JP2003292732 A JP 2003292732A JP 2002097549 A JP2002097549 A JP 2002097549A JP 2002097549 A JP2002097549 A JP 2002097549A JP 2003292732 A JP2003292732 A JP 2003292732A
Authority
JP
Japan
Prior art keywords
compound
component
molding material
molecule
resin molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002097549A
Other languages
Japanese (ja)
Inventor
Hiroshi Nagata
永田  寛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP2002097549A priority Critical patent/JP2003292732A/en
Publication of JP2003292732A publication Critical patent/JP2003292732A/en
Pending legal-status Critical Current

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin molding material in which rapid curing property is compatible with storage stability. <P>SOLUTION: The epoxy resin molding material comprises (A) a compound having two or more epoxy groups in one molecule, (B) a compound having two or more phenolic hydroxy groups in one molecule, (C) an organic phosphine represented by formula (1) (P is phosphorus atom; R<SB>1</SB>, R<SB>2</SB>and R<SB>3</SB>are each a substituted or unsubstituted aromatic group or an alkyl group), (D) at least one compound selected from boron oxide, boric acid and boric acid esters and (E) an inorganic filler as essential components. The resin molding material is obtained by previously melting and mixing total or a part of the component (B) with the component (C) and the component (D). <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、硬化性と保存性が
良好で、電気・電子材料分野に有用な熱硬化性樹脂組成
物およびこれを用いたエポキシ樹脂成形材料ならびに半
導体装置に関するものである。
TECHNICAL FIELD The present invention relates to a thermosetting resin composition having good curability and storability and useful in the field of electric and electronic materials, an epoxy resin molding material using the same, and a semiconductor device. .

【0002】[0002]

【従来の技術】電気・電子材料、特に半導体用封止材料
は、近年生産効率の向上を目的とした速硬化性と、物流
・保管時の取扱い性向上のための保存性の向上とが求め
られるようになってきている。従来、電気・電子材料分
野向けエポキシ樹脂には、硬化促進剤として、アミン
類、イミダゾール系化合物、ジアザビシクロウンデセン
などの含窒素複素環式化合物、第四級アンモニウム、ホ
スホニウムあるいはアルソニウム化合物などの種々の化
合物が使用されている。アミン類、特にイミダゾール類
などは優れた硬化性を示すものの半導体封止材料として
高温高湿度条件下において内部配線腐食が生じる原因、
すなわち耐湿信頼性が低い傾向となっており、電気・電
子材料分野の使用には問題があり、ホスホニウム化合物
などのリン系化合物の使用が一般的となっている。これ
ら一般に使用される硬化促進剤は、常温などの比較的低
温においても、硬化促進作用を示す場合が多い。このこ
とは、樹脂組成物の製造時および保存時の粘度上昇や、
流動性の低下、硬化性のばらつきなど樹脂組成物として
の品質を低下させる原因となっている。
2. Description of the Related Art In recent years, electric / electronic materials, especially semiconductor encapsulation materials, have been required to have a fast curing property for the purpose of improving production efficiency and a preservability for improving the handling property during distribution and storage. Is becoming available. Conventionally, epoxy resins for the electric and electronic materials field include amines, imidazole compounds, nitrogen-containing heterocyclic compounds such as diazabicycloundecene, quaternary ammonium, phosphonium or arsonium compounds as curing accelerators. Various compounds have been used. Amines, especially imidazoles, etc. show excellent curability, but as a semiconductor encapsulating material cause internal wiring corrosion under high temperature and high humidity conditions,
That is, the moisture resistance reliability tends to be low, and there is a problem in use in the field of electric / electronic materials, and the use of phosphorus compounds such as phosphonium compounds is common. These commonly used curing accelerators often exhibit a curing promoting action even at a relatively low temperature such as room temperature. This means that the viscosity of the resin composition during production and storage increases,
This is a cause of deterioration in quality of the resin composition such as deterioration in fluidity and variation in curability.

【0003】この問題を解決すべく、近年では低温での
粘度、流動性の経時変化を抑え、成形、成形時の加熱に
よってのみ、硬化反応を発現する、いわゆる潜伏性硬化
促進剤の研究が盛んになされている。その手段として硬
化促進剤の活性点をイオン対により保護することで、潜
伏性を発現する研究がなされており、特開平8−412
90号公報では、種々の有機酸とホスホニウムイオンと
の塩構造を有する潜伏性硬化促進剤が開示されている。
しかしこのホスホニウム塩は、特定の高次の分子構造を
有さず、イオン対が比較的容易に外部環境の影響を受け
るため、近年の低分子エポキシ樹脂やフェノールアラル
キル樹脂のような分子の動きやすいフェノール樹脂硬化
剤を用いる半導体用封止材料では、保存性が低下する問
題が生じている。
In order to solve this problem, in recent years, research on so-called latent curing accelerators has been actively conducted, which suppresses changes in viscosity and fluidity at a low temperature over time and causes a curing reaction only by molding and heating during molding. Has been done. As a means for this, research has been conducted to develop latent properties by protecting the active sites of the curing accelerator with ion pairs.
Japanese Patent Publication No. 90 discloses latent curing accelerators having a salt structure of various organic acids and phosphonium ions.
However, this phosphonium salt does not have a specific higher-order molecular structure, and the ion pair is relatively easily affected by the external environment. Therefore, molecules such as low molecular weight epoxy resins and phenol aralkyl resins are likely to move in recent years. The encapsulating material for semiconductors using a phenolic resin curing agent has a problem that storage stability is deteriorated.

【0004】[0004]

【発明が解決しようとする課題】本発明は、硬化性と保
存性が良好で、電気・電子材料分野に有用な熱硬化性樹
脂組成物およびこれを用いたエポキシ樹脂成形材料なら
びに耐湿信頼性に優れる半導体装置を提供することを目
的とするものである。
DISCLOSURE OF THE INVENTION The present invention provides a thermosetting resin composition having good curability and storability and useful in the field of electric and electronic materials, an epoxy resin molding material using the same, and a moisture resistance reliability. It is an object to provide an excellent semiconductor device.

【0005】[0005]

【課題を解決するための手段】本発明は、[1]1分子
内にエポキシ基を2個以上有する化合物(A)、1分子
内にフェノール性水酸基を2個以上有する化合物
(B)、一般式(1)で表される有機ホスフィン
(C)、及び酸化ホウ素、ホウ酸、又はホウ酸エステル
から選ばれる少なくとも1つ以上の化合物(D)を必須
成分とし、(B)成分の全て又は一部、(C)成分、
(D)成分を予め溶融混合してなることを特徴とする熱
硬化性樹脂組成物、[2]1分子内にエポキシ基を2個
以上有する化合物(A)、1分子内にフェノール性水酸
基を2個以上有する化合物(B)、一般式(1)で表さ
れる有機ホスフィン(C)、及び酸化ホウ素、ホウ酸、
又はホウ酸エステルから選ばれる少なくとも1つ以上の
化合物(D)、及び無機充填材(E)を必須成分とし、
(B)成分の全て又は一部、(C)成分、(D)成分を
予め溶融混合してなることを特徴とするエポキシ樹脂成
形材料、
The present invention provides [1] a compound (A) having two or more epoxy groups in one molecule, and a compound (B) generally having two or more phenolic hydroxyl groups in one molecule. The organic phosphine (C) represented by the formula (1) and at least one compound (D) selected from boron oxide, boric acid, or boric acid ester as an essential component, and all or one of the components (B). Part, (C) component,
A thermosetting resin composition comprising the components (D) pre-melted and mixed, [2] a compound (A) having two or more epoxy groups in one molecule, and a phenolic hydroxyl group in one molecule. A compound (B) having two or more, an organic phosphine (C) represented by the general formula (1), boron oxide, boric acid,
Alternatively, at least one compound (D) selected from borate esters and an inorganic filler (E) are used as essential components,
An epoxy resin molding material, characterized in that all or part of the component (B), the component (C) and the component (D) are melt-mixed in advance,

【0006】[0006]

【化2】 (Pはリン原子、R1、R2およびR3は置換もしくは無
置換の芳香族基、またはアルキル基)
[Chemical 2] (P is a phosphorus atom, R 1 , R 2 and R 3 are substituted or unsubstituted aromatic groups or alkyl groups)

【0007】[3]第[2]項記載のエポキシ樹脂成形
材料で半導体素子を封止してなることを特徴とする半導
体装置、である。これらを用いることにより、硬化性と
保存性が良好なエポキシ樹脂成形材料を得ることができ
る。
[3] A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin molding material according to the item [2]. By using these, an epoxy resin molding material having good curability and storage stability can be obtained.

【0008】[0008]

【発明の実施の形態】本発明に用いる1分子内にエポキ
シ基を2個以上有する化合物(A)は、1分子内にエポ
キシ基を2個以上有するものであれば、何ら制限はな
く、例えばビフェニル型エポキシ樹脂、ノボラック型エ
ポキシ樹脂、ナフタレン型エポキシ樹脂などビフェノー
ルなどのフェノール類やフェノール樹脂、ナフトール類
などの水酸基にエピクロロヒドリンを反応させて得られ
るエポキシ樹脂、エポキシ化合物などが挙げられる。そ
の他に脂環式エポキシ樹脂のようにオレフィンを過酸を
用いて酸化させエポキシ化したエポキシ樹脂や、ハイド
ロキノン等のジヒドロキシベンゼン類をエピクロロヒド
リンでエポキシ化したものなどが挙げられる。
BEST MODE FOR CARRYING OUT THE INVENTION The compound (A) having two or more epoxy groups in one molecule used in the present invention is not limited as long as it has two or more epoxy groups in one molecule. Examples thereof include biphenyl-type epoxy resins, novolac-type epoxy resins, naphthalene-type epoxy resins, phenols such as biphenols, phenol resins, epoxy resins obtained by reacting hydroxyl groups such as naphthols with epichlorohydrin, and epoxy compounds. Other examples include epoxy resins such as alicyclic epoxy resins, which are epoxidized by oxidizing olefins with peracid, and those in which dihydroxybenzenes such as hydroquinone are epoxidized with epichlorohydrin.

【0009】本発明に用いる1分子内にフェノール性水
酸基を2個以上有する化合物(B)は、1分子内にエポ
キシ基を2個以上有する化合物(A)の硬化剤として作
用するものである。具体的にはフェノールノボラック樹
脂、クレゾールノボラック樹脂、アルキル変性ノボラッ
ク樹脂(シクロアルケンの二重結合をフリーデルクラフ
ツ型の反応でフェノール類と反応、共縮合した樹脂を含
む)、フェノールアラルキル樹脂、ナフトール類とフェ
ノール類をカルボニル基含有化合物と共縮合した樹脂な
どが例示されるが、1分子内で芳香族性の環に結合する
水素原子が、水酸基で2個以上置換された化合物であれ
ばよい。
The compound (B) having two or more phenolic hydroxyl groups in one molecule used in the present invention acts as a curing agent for the compound (A) having two or more epoxy groups in one molecule. Specifically, phenol novolac resins, cresol novolac resins, alkyl-modified novolac resins (including resins in which cycloalkene double bonds are reacted with phenols by Friedel-Crafts type reaction and co-condensed), phenol aralkyl resins, naphthols Examples thereof include a resin in which phenols and a carbonyl group-containing compound are co-condensed with each other, and a compound in which two or more hydrogen atoms bonded to an aromatic ring in one molecule are substituted with hydroxyl groups may be used.

【0010】本発明において硬化促進剤として作用する
有機ホスフィン(C)は、一般式(1)で示される。こ
の有機ホスフィン(C)は、フェノール性水酸基を2個
以上有する化合物(B)の全て又は一部、有機ホスフィ
ン(C)、酸化ホウ素、ホウ酸、又はホウ酸エステルか
ら選ばれる少なくとも1つ以上の化合物(D)を予め溶
融混合して用いる。これらの成分を溶融混合することに
より、酸化ホウ素、ホウ酸又はホウ酸エステルから選ば
れる少なくとも1つ以上の化合物(D)はフェノール性
水酸基と反応し、ホウ酸エステルを生成する。更に、有
機ホスフィンのリン原子の孤立電子対が生成したフェノ
ール性水酸基の反応物のホウ素原子に流れ込み、安定化
すると考えられる。このような構造をとりうる有機ホス
フィンは置換または無置換のアリール基やアルキル基を
置換基として有するトリ置換ホスフィンが好ましく、具
体的にはトリフェニルホスフィン、トリトリルホスフィ
ンなどのトリアリール置換ホスフィン、ジフェニルメチ
ルホスフィンなどのジアリールモノアルキルホスフィ
ン、トリブチルホスフィンなどのトリアルキル置換ホス
フィンなどが例示される。
The organic phosphine (C) which acts as a curing accelerator in the present invention is represented by the general formula (1). This organic phosphine (C) is at least one or more selected from all or part of the compound (B) having two or more phenolic hydroxyl groups, organic phosphine (C), boron oxide, boric acid, or boric acid ester. The compound (D) is used by being melt-mixed in advance. By melt-mixing these components, at least one compound (D) selected from boron oxide, boric acid, or boric acid ester reacts with the phenolic hydroxyl group to form boric acid ester. Further, it is considered that the lone electron pair of the phosphorus atom of the organic phosphine flows into the boron atom of the reaction product of the phenolic hydroxyl group generated and is stabilized. The organic phosphine capable of having such a structure is preferably a tri-substituted phosphine having a substituted or unsubstituted aryl group or an alkyl group as a substituent, and specifically, a triaryl-substituted phosphine such as triphenylphosphine and tritolylphosphine, diphenyl. Examples include diarylmonoalkylphosphines such as methylphosphine and trialkyl-substituted phosphines such as tributylphosphine.

【0011】本発明に用いる1分子内にフェノール性水
酸基を2個以上有する化合物(B)、有機ホスフィン
(C)及び酸化ホウ素、ホウ酸、又はホウ酸エステルか
ら選ばれる少なくとも1つ以上の化合物(D)の溶融混
合品は、前述のように有機ホスフィン−ホウ素の配位物
が生成しているが、有機ホスフィンのリン原子よりもホ
ウ素原子のモル量が等しいか、あるいは多ければ問題な
い。
The compound (B) having two or more phenolic hydroxyl groups in one molecule used in the present invention, the organic phosphine (C) and at least one compound selected from boron oxide, boric acid, and borate ester ( In the molten mixture of D), the organic phosphine-boron coordination product is formed as described above, but there is no problem if the molar amount of the boron atom is equal to or larger than the phosphorus atom of the organic phosphine.

【0012】有機ホスフィン(C)の配合量は、1分子
内にエポキシ基を2個以上有する化合物(A)と硬化剤
として作用する1分子内にフェノール性水酸基を2個以
上有する化合物(B)との合計重量を100重量部とし
た場合、0.5〜20重量部程度が硬化性、保存性、他
特性のバランスがよく好適である。また1分子内にエポ
キシ基を2個以上有する化合物(A)と1分子内にフェ
ノール性水酸基を2個以上有する化合物(B)との配合
比率は、1分子内にエポキシ基を2個以上有する化合物
(A)のエポキシ基1モルに対し、1分子内にフェノー
ル性水酸基を2個以上有する化合物(B)のフェノール
性水酸基が、0.5〜2モル、好ましくは0.8〜1.
2程度のモル比となるよう用いると、硬化性、耐熱性、
電気特性等がより良好となる。
The compounding amount of the organic phosphine (C) is such that the compound (A) having two or more epoxy groups in one molecule and the compound (B) having two or more phenolic hydroxyl groups in one molecule acting as a curing agent. When the total weight of the above is 100 parts by weight, about 0.5 to 20 parts by weight is preferable because of good balance of curability, storability and other properties. The compounding ratio of the compound (A) having two or more epoxy groups in one molecule and the compound (B) having two or more phenolic hydroxyl groups in one molecule has two or more epoxy groups in one molecule. 0.5 to 2 mol, preferably 0.8 to 1. mol of the phenolic hydroxyl group of the compound (B) having two or more phenolic hydroxyl groups in one molecule with respect to 1 mol of the epoxy group of the compound (A).
When used so that the molar ratio is about 2, curability, heat resistance,
The electrical characteristics and the like become better.

【0013】本発明に用いる無機充填材(E)の種類に
ついては、特に制限はなく、一般に封止材料に用いられ
ているものを使用することができる。例えば溶融破砕シ
リカ粉末、溶融球状シリカ粉末、結晶シリカ粉末、2次
凝集シリカ粉末、アルミナ、チタンホワイト、水酸化ア
ルミニウム、タルク、クレー、ガラス繊維等が挙げら
れ、特に溶融球状シリカ粉末が好ましい。形状は限りな
く真球状であることが好ましく、又、粒子の大きさの異
なるものを混合することにより充填量を多くすることが
できる。
The type of the inorganic filler (E) used in the present invention is not particularly limited, and those generally used as a sealing material can be used. Examples thereof include fused crushed silica powder, fused spherical silica powder, crystalline silica powder, secondary agglomerated silica powder, alumina, titanium white, aluminum hydroxide, talc, clay and glass fiber, and fused spherical silica powder is particularly preferable. It is preferable that the shape is infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes.

【0014】この無機充填材(E)の配合量としては、
1分子内にエポキシ基を2個以上有する化合物(A)と
1分子内にフェノール性水酸基を2個以上有する化合物
(B)との合計量100重量部あたり、200〜240
0重量部が好ましい。下限値を下回ると無機充填材によ
る補強効果が充分に発現しないおそれがあり、上限値を
越えると、成形材料の流動性が低下し成形時に充填不良
等が生じるおそれがあるので好ましくない。特に無機充
填材の配合量が、前記(A)成分と(B)成分の合計量
100重量部あたり、250〜1400重量部であれ
ば、成形材料の硬化物の吸湿率が低くなり、半田クラッ
クの発生を防止することができ、更に溶融時の成形材料
の粘度が低くなるため、半導体装置内部の金線変形を引
き起こすおそれがなく、より好ましい。又無機充填材
は、予め充分混合しておくことが好ましい。
The blending amount of this inorganic filler (E) is as follows.
200 to 240 per 100 parts by weight of the total amount of the compound (A) having two or more epoxy groups in one molecule and the compound (B) having two or more phenolic hydroxyl groups in one molecule.
0 parts by weight is preferred. If it is less than the lower limit value, the reinforcing effect of the inorganic filler may not be sufficiently exhibited, and if it exceeds the upper limit value, the fluidity of the molding material may be lowered, and filling failure may occur during molding, which is not preferable. In particular, when the compounding amount of the inorganic filler is 250 to 1400 parts by weight per 100 parts by weight of the total amount of the components (A) and (B), the moisture absorption rate of the cured material of the molding material is low, and solder cracking occurs. Is more preferable, and the viscosity of the molding material at the time of melting is lowered, so that there is no possibility of causing deformation of the gold wire inside the semiconductor device, which is more preferable. Further, it is preferable that the inorganic filler is sufficiently mixed in advance.

【0015】本発明のエポキシ樹脂成形材料は、(A)
〜(E)成分の他に、必要に応じてγ−グリシドキシプ
ロピルトリメトキシシラン等のカップリング剤、カーボ
ンブラック等の着色剤、臭素化エポキシ樹脂、酸化アン
チモン、リン化合物等の難燃剤、シリコーンオイル、シ
リコーンゴム等の低応力成分、天然ワックス、合成ワッ
クス、高級脂肪酸もしくはその金属塩類、パラフィン等
の離型剤、酸化防止剤等の各種添加剤を配合することが
でき、また、本発明において硬化促進剤として機能する
有機ホスフィン(C)の特性を損なわない範囲で、1,
8−ジアザビシクロ(5,4,0)ウンデセン−7、2
−メチルイミダゾール等の硬化促進剤と併用しても何ら
問題はない。
The epoxy resin molding material of the present invention is (A)
In addition to the component (E), if necessary, a coupling agent such as γ-glycidoxypropyltrimethoxysilane, a colorant such as carbon black, a brominated epoxy resin, an antimony oxide, a flame retardant such as a phosphorus compound, Various additives such as low stress components such as silicone oil and silicone rubber, natural wax, synthetic wax, higher fatty acid or metal salt thereof, mold release agent such as paraffin, antioxidant and the like can be blended. In the range that does not impair the characteristics of the organic phosphine (C) that functions as a curing accelerator in 1,
8-diazabicyclo (5,4,0) undecene-7,2
-There is no problem even if it is used together with a curing accelerator such as methylimidazole.

【0016】本発明のエポキシ樹脂成形材料は、(B)
成分のすべて又は一部、(C)成分、及び(D)成分を
予め溶融混合したのちに、(A)成分、(E)成分、及
びその他の添加剤等をミキサーを用いて常温混合し、ロ
ール、押出機等の混練機で混練し、冷却後粉砕して得ら
れる。(B)成分のすべて又は一部、(C)成分、及び
(D)成分を予め溶融混合する方法は、(B)成分と
(D)成分の反応によるホウ酸エステルの生成、及び
(C)成分のリン原子孤立電子対の上記反応で生成した
ホウ酸エステルのホウ素原子への流れ込みによる安定化
が起こる溶融混合方法であれば、特に限定するものでは
無いが、例えば、撹拌装置付きのセパラブルフラスコを
用い、窒素気流下で内容物が均一透明となり水又はアル
コールの生成が終了まで加熱攪拌させたのち、真空脱泡
により完全に水又はアルコールを除去し、その後、ステ
ンレスバットに溶融品を取り出し冷却後粉砕する方法等
が挙げられる。
The epoxy resin molding material of the present invention is (B)
After melt-mixing all or part of the components, the component (C), and the component (D) in advance, the component (A), the component (E), and other additives are mixed at room temperature using a mixer, It is obtained by kneading with a kneader such as a roll or an extruder, cooling and pulverizing. The method in which all or part of the component (B), the component (C), and the component (D) are melt-mixed in advance is performed by the reaction of the component (B) and the component (D) to form a borate ester, and (C). The method is not particularly limited as long as it is a melt mixing method in which the stabilization of the boric acid ester produced by the above reaction of the lone pair of phosphorus atoms of the component is caused by flowing into the boron atom, but, for example, a separator with a stirrer Using a flask, the contents become uniformly transparent under a nitrogen stream and heated and stirred until the production of water or alcohol is completed, then water or alcohol is completely removed by vacuum defoaming, and then the molten product is taken out to a stainless vat. Examples include a method of pulverizing after cooling.

【0017】本発明のエポキシ樹脂成形材料を用いて、
半導体等の電子部品を封止し、半導体装置を製造するに
は、トランスファーモールド、コンプレッションモール
ド、インジェクションモールド等の成形方法で硬化成形
することができる。本発明のエポキシ樹脂成形材料の硬
化物で封止された半導体装置は、本発明の技術的範囲に
含まれ、優れた耐湿性を示す。
Using the epoxy resin molding material of the present invention,
In order to seal an electronic component such as a semiconductor and manufacture a semiconductor device, it can be cured and molded by a molding method such as a transfer mold, a compression mold or an injection mold. The semiconductor device encapsulated with the cured product of the epoxy resin molding material of the present invention is included in the technical scope of the present invention and exhibits excellent moisture resistance.

【0018】[0018]

【実施例】以下に、本発明の実施例を示すが、本発明は
これにより何ら制限を受けるものではない。 [溶融混合品の合成]1分子内にフェノール性水酸基を
2個以上有する化合物(B)、一般式(1)で表される
有機ホスフィン(C)、酸化ホウ素、ホウ酸またはホウ
酸エステルから選ばれる少なくとも1つ以上の化合物
(D)、を窒素気流下で、内容物をが均一透明になるま
で加熱攪拌した。以下これを(M)とする。その後、溶
融混合品を取り出し、冷却粉砕して用いる。
EXAMPLES Examples of the present invention will be shown below, but the present invention is not limited thereto. [Synthesis of Melt Mixture] Selected from compound (B) having two or more phenolic hydroxyl groups in one molecule, organic phosphine (C) represented by general formula (1), boron oxide, boric acid or boric acid ester. At least one compound (D), which was prepared, was heated and stirred under a nitrogen stream until the contents became uniformly transparent. Hereinafter, this is referred to as (M). After that, the molten mixture is taken out, cooled and pulverized for use.

【0019】(溶融混合1)撹拌装置付きの500ミリ
リットルのセパラブルフラスコに三井化学(株)製XL
C−LL 90g、トリフェニルホスフィン 10g
(38ミリモル)、酸化ホウ素 3g(43ミリモル)
を仕込み、150℃に加熱、撹拌溶解させる。内容物が
均一透明となり、水の生成終了後、真空脱泡を実施し、
完全に水あるいはアルコールを除去する。その後、ステ
ンレスバットに溶融品を取り出し、冷却後粉砕する。こ
れをM1とする。 (溶融混合2)撹拌装置付きの500ミリリットルのセ
パラブルフラスコに三井化学(株)製XLC−LL 9
0g、ジ(ジフェニルホスフィノ)エタン 10g(2
5ミリモル)、ホウ酸 4g(65ミリモル)を仕込
み、150℃に加熱、撹拌溶解させる。内容物が均一透
明となり、水の生成終了後、真空脱泡を実施し、完全に
水あるいはアルコールを除去する。その後、ステンレス
バットに溶融品を取り出し、冷却後粉砕する。これをM
2とする。 (溶融混合3)撹拌装置付きの500ミリリットルのセ
パラブルフラスコに三井化学(株)製XLC−LL 9
0g、ジフェニルエチルホスフィン 10g(47ミリ
モル)、ホウ酸トリブチル 11g(48ミリモル)を
仕込み、150℃に加熱、撹拌溶解させる。内容物が均
一透明となり、ブタノール生成終了後、真空脱泡を実施
し、除去する。その後、ステンレスバットに溶融品を取
り出し、冷却後粉砕する。これをM3とする。 (溶融混合4)撹拌装置付きの500ミリリットルのセ
パラブルフラスコに水酸基当量104、軟化点95℃の
フェノールノボラック樹脂 90g、トリフェニルホス
フィン10g(38ミリモル)、酸化ホウ素 3g(4
3ミリモル)を仕込み、150℃に加熱、撹拌溶解させ
る。内容物が均一透明となり、水の生成終了後、真空脱
泡を実施し、完全に水あるいはアルコールを除去する。
その後、ステンレスバットに溶融品を取り出し、冷却後
粉砕する。これをM4とする。 (溶融混合5)撹拌装置付きの500ミリリットルのセ
パラブルフラスコに三井化学(株)製XLC−LL 9
0g、トリフェニルホスフィン 10g(38ミリモ
ル)を仕込み、150℃に加熱、撹拌溶解させる。内容
物が均一透明となった際、水等の生成はない。その後、
ステンレスバットに溶融品を取り出し、冷却後粉砕す
る。これをM5とする。 (溶融混合6)撹拌装置付きの500ミリリットルのセ
パラブルフラスコに三井化学(株)製XLC−LL 1
00g、酸化ホウ素 3g(ホウ素43ミリモル)を仕
込み、150℃に加熱、撹拌溶解させる。内容物が均一
透明となり、水の生成終了後、真空脱泡を実施し、完全
に水あるいはアルコールを除去する。その後、ステンレ
スバットに溶融品を取り出し、冷却後粉砕する。これを
M6とする。
(Melting and mixing 1) XL in a 500 ml separable flask equipped with a stirrer, manufactured by Mitsui Chemicals, Inc.
C-LL 90 g, triphenylphosphine 10 g
(38 mmol), boron oxide 3 g (43 mmol)
Is charged, heated to 150 ° C., and dissolved by stirring. After the contents become uniform and transparent and water is generated, vacuum degassing is performed.
Completely remove water or alcohol. Then, the molten product is taken out into a stainless steel vat, cooled, and then ground. This is designated as M1. (Melting and mixing 2) XLC-LL 9 manufactured by Mitsui Chemicals, Inc. in a 500 ml separable flask equipped with a stirrer.
0 g, di (diphenylphosphino) ethane 10 g (2
5 mmol) and 4 g (65 mmol) of boric acid are charged, and the mixture is heated to 150 ° C. and dissolved with stirring. After the contents become uniformly transparent and the generation of water is completed, vacuum defoaming is performed to completely remove water or alcohol. Then, the molten product is taken out into a stainless steel vat, cooled, and then ground. This is M
Set to 2. (Melting and mixing 3) XLC-LL 9 manufactured by Mitsui Chemicals, Inc. in a 500 ml separable flask equipped with a stirrer
0 g, diphenylethylphosphine 10 g (47 mmol) and tributyl borate 11 g (48 mmol) were charged, and the mixture was heated to 150 ° C. and dissolved with stirring. After the content becomes uniformly transparent and the butanol production is completed, vacuum defoaming is performed and removed. Then, the molten product is taken out into a stainless steel vat, cooled, and then ground. This is designated as M3. (Melting and mixing 4) In a 500 ml separable flask equipped with a stirrer, 90 g of a phenol novolac resin having a hydroxyl equivalent of 104, a softening point of 95 ° C., 10 g (38 mmol) of triphenylphosphine, 3 g (4) of boron oxide.
(3 mmol), and heated to 150 ° C. to dissolve with stirring. After the contents become uniformly transparent and the generation of water is completed, vacuum defoaming is performed to completely remove water or alcohol.
Then, the molten product is taken out into a stainless steel vat, cooled, and then ground. This is designated as M4. (Melting and mixing 5) XLC-LL 9 manufactured by Mitsui Chemicals, Inc. in a 500 ml separable flask equipped with a stirrer
0 g and 10 g (38 mmol) of triphenylphosphine are charged and heated to 150 ° C. to dissolve with stirring. When the contents become uniform and transparent, no water is generated. afterwards,
The molten product is taken out into a stainless steel vat, cooled, and then ground. This is designated as M5. (Melting and mixing 6) XLC-LL 1 manufactured by Mitsui Chemicals, Inc. in a 500 ml separable flask equipped with a stirrer
00 g and boron oxide 3 g (boron 43 mmol) are charged and heated to 150 ° C. to dissolve with stirring. After the contents become uniformly transparent and the generation of water is completed, vacuum defoaming is performed to completely remove water or alcohol. Then, the molten product is taken out into a stainless steel vat, cooled, and then ground. This is designated as M6.

【0020】[熱硬化性樹脂組成物の評価]まず、1分子
内にフェノール性水酸基を2個以上有する化合物
(B)、有機ホスフィン(C)及び酸化ホウ素、ホウ酸
またはホウ酸エステルから選ばれる少なくとも1つ以上
の化合物(D)の溶融混合品Mと、1分子内にエポキシ
基を2個以上有する化合物(A)を混合し、さらに11
0℃で2分間、熱板上で溶融混練した後、冷却粉砕して
組成物のサンプルを調製し評価を行った。評価方法は、
下記のとおりである。 (1)硬化トルク 前記のサンプル調製方法により作製した組成物を用い
て、キュラストメーター(オリエンテック社・製、JS
Rキュラストメーター4PS型)により、175℃で、
45秒後のトルクを求めた。キュラストメーターにおけ
るトルクは、硬化性のパラメータであり、この値の大き
い方が硬化性は良好である。単位はN・m。 (2)硬化発熱量残存率(保存性評価) 前記のサンプル調製方法により作製した組成物を用い
て、調製直後の初期硬化発熱量および40℃で3日間保
存処理後の硬化発熱量を測定し、初期硬化発熱量(mJ
/mg)に対する保存処理後の硬化発熱量(mJ/m
g)の百分率を算出した。尚硬化発熱量の測定は、昇温
速度10℃/分の条件で、示差熱分析により測定した。
この値が大きいほど、保存性が良好であることを示す。
[Evaluation of Thermosetting Resin Composition] First, a compound (B) having two or more phenolic hydroxyl groups in one molecule, an organic phosphine (C), boron oxide, boric acid or boric acid ester is selected. A molten mixture M of at least one or more compounds (D) and a compound (A) having two or more epoxy groups in one molecule are mixed, and further 11
The mixture was melt-kneaded on a hot plate at 0 ° C. for 2 minutes and then cooled and pulverized to prepare a sample of the composition for evaluation. The evaluation method is
It is as follows. (1) Curing torque Using the composition prepared by the sample preparation method described above, a curast meter (manufactured by Orientec Co., JS
R Curastometer 4PS type) at 175 ° C,
The torque after 45 seconds was determined. The torque in the curast meter is a parameter of curability, and the larger this value, the better the curability. The unit is Nm. (2) Curing exotherm residual rate (evaluation of storability) Using the composition prepared by the above sample preparation method, the initial curing exotherm immediately after preparation and the curing exotherm after storage treatment at 40 ° C for 3 days were measured. , Initial curing heat value (mJ
/ Mg) heat value of curing (mJ / m)
The percentage of g) was calculated. The curing exotherm was measured by differential thermal analysis under the conditions of a temperature rising rate of 10 ° C / min.
The larger this value is, the better the storage stability is.

【0021】(実施例1〜4および比較例1〜8)実施
例1〜4および比較例1〜8について、表1に示した配
合により、前記の方法で、組成物のサンプルを調製し評
価した。得られた各組成物の評価結果は、表1に示した
通りである。
(Examples 1 to 4 and Comparative Examples 1 to 8) For Examples 1 to 4 and Comparative Examples 1 to 8, samples of the composition were prepared by the above-mentioned method according to the formulation shown in Table 1 and evaluated. did. The evaluation results of the obtained compositions are as shown in Table 1.

【0022】[0022]

【表1】 [Table 1]

【0023】実施例に示すように、本発明の熱硬化性樹
脂組成物は、硬化性、保存性が良好であるのに対し、比
較例のトリフェニルホスフィンのみを溶融混合した樹脂
組成物は保存性が悪く、またホウ素のみを溶融混合した
樹脂組成物も同様に保存性が悪い。
As shown in the examples, the thermosetting resin composition of the present invention has good curability and storability, whereas the resin composition of Comparative Example prepared by melt-mixing only triphenylphosphine is preserved. In addition, the resin composition obtained by melt mixing only boron has poor storage stability.

【0024】 [エポキシ樹脂成形材料の評価] (実施例5) ジャパンエポキシレジン(株)製YX−4000H 29重量部 三井化学(株)製XLC−LL 48重量部 溶融混合物 M1 26重量部 溶融球状シリカ(平均粒径15μm) 500重量部 カーボンブラック 2重量部 臭素化ビスフェノールA型エポキシ樹脂 2重量部 カルナバワックス 2重量部 を混合し、熱ロールを用いて、93℃で9分間混練して
冷却後粉砕し、エポキシ樹脂成形材料を得た。得られた
エポキシ樹脂成形材料を、以下の方法で評価した。結果
を表2に示す。
[Evaluation of Epoxy Resin Molding Material] (Example 5) Japan Epoxy Resin Co., Ltd. YX-4000H 29 parts by weight Mitsui Chemicals Co., Ltd. XLC-LL 48 parts by weight Melt mixture M1 26 parts by weight Fused spherical silica (Average particle size 15 μm) 500 parts by weight carbon black 2 parts by weight Brominated bisphenol A type epoxy resin 2 parts by weight Carnauba wax 2 parts by weight are mixed, and the mixture is kneaded at 93 ° C. for 9 minutes using a hot roll and pulverized after cooling. Then, an epoxy resin molding material was obtained. The obtained epoxy resin molding material was evaluated by the following methods. The results are shown in Table 2.

【0025】評価方法 (1)スパイラルフローは、EMMI−I−66に準じ
たスパイラルフロー測定用の金型を用い、金型温度17
5℃、注入圧力6.9MPa、硬化時間2分で測定し
た。スパイラルフローは、流動性のパラメータであり、
大きい数値を示す方が良好な流動性を示す。単位はc
m。 (2)硬化トルクは、キュラストメーター(オリエンテ
ック(株)製、JSRキュラストメーター4PS型)を
用い、175℃、55秒後のトルクを測定した。この値
の大きい方が硬化性は良好である。単位はN・m。 (3)フロー残存率は、製造直後と30℃で1週間保存
した後のスパイラルフローを測定し、製造直後のスパイ
ラルフローに対する保存後の百分率として表した。単位
は%。
Evaluation method (1) For the spiral flow, a mold for spiral flow measurement conforming to EMMI-I-66 was used, and the mold temperature was 17
It was measured at 5 ° C., injection pressure of 6.9 MPa, and curing time of 2 minutes. Spiral flow is a parameter of liquidity,
The larger the number, the better the fluidity. Unit is c
m. (2) As for the curing torque, a torque after 55 seconds at 175 ° C. was measured using a Curastometer (JSR Curastometer 4PS type manufactured by Orientec Co., Ltd.). The larger this value, the better the curability. The unit is Nm. (3) The residual flow rate was measured by measuring the spiral flow immediately after production and after storage at 30 ° C. for 1 week, and expressed as a percentage of the spiral flow immediately after production after storage. Units%.

【0026】(実施例6〜10、比較例9〜16)実施
例6〜10および比較例9〜16について、表2の配合
に従い、実施例5と同様にしてエポキシ樹脂成形材料を
調製し評価した。結果を表2に示す。
(Examples 6 to 10 and Comparative Examples 9 to 16) With respect to Examples 6 to 10 and Comparative Examples 9 to 16, epoxy resin molding materials were prepared and evaluated in the same manner as in Example 5 according to the formulation shown in Table 2. did. The results are shown in Table 2.

【0027】[0027]

【表2】 [Table 2]

【0028】実施例5〜10の本発明のエポキシ樹脂成
形材料は、保存性、硬化性がきわめて良好である。一
方、比較例9〜16のエポキシ樹脂成形材料は硬化性、
流動性、保存性のいずれかが実施例5〜10と比較し劣
る。
The epoxy resin molding materials of Examples 5 to 10 according to the present invention have very good storage stability and curability. On the other hand, the epoxy resin molding materials of Comparative Examples 9 to 16 are curable,
Either the fluidity or the storability is inferior as compared with Examples 5-10.

【0029】[0029]

【発明の効果】本発明の熱硬化性樹脂組成物及びエポキ
シ樹脂成形材料は、優れた硬化性、保存性を有し、これ
を用いて半導体素子を封止してなる半導体装置は産業上
有用である。
INDUSTRIAL APPLICABILITY The thermosetting resin composition and epoxy resin molding material of the present invention have excellent curability and storability, and a semiconductor device obtained by encapsulating a semiconductor element using the composition is industrially useful. Is.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/29 H01L 23/30 R 23/31 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 23/29 H01L 23/30 R 23/31

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 1分子内にエポキシ基を2個以上有する
化合物(A)、1分子内にフェノール性水酸基を2個以
上有する化合物(B)、一般式(1)で表される有機ホ
スフィン(C)、及び酸化ホウ素、ホウ酸、又はホウ酸
エステルから選ばれる少なくとも1つ以上の化合物
(D)を必須成分とし、(B)成分の全て又は一部、
(C)成分、(D)成分を予め溶融混合してなることを
特徴とする熱硬化性樹脂組成物。
1. A compound (A) having two or more epoxy groups in one molecule, a compound (B) having two or more phenolic hydroxyl groups in one molecule, an organic phosphine represented by the general formula (1) ( C) and at least one compound (D) selected from boron oxide, boric acid, or boric acid ester as an essential component, and all or part of the component (B),
A thermosetting resin composition, characterized in that the component (C) and the component (D) are melt-mixed in advance.
【請求項2】 1分子内にエポキシ基を2個以上有する
化合物(A)、1分子内にフェノール性水酸基を2個以
上有する化合物(B)、一般式(1)で表される有機ホ
スフィン(C)、酸化ホウ素、ホウ酸、又はホウ酸エス
テルから選ばれる少なくとも1つ以上の化合物(D)、
及び無機充填材(E)を必須成分とし、(B)成分の全
て又は一部、(C)成分、(D)成分を予め溶融混合し
てなることを特徴とするエポキシ樹脂成形材料。 【化1】 (Pはリン原子、R1、R2およびR3は置換もしくは無
置換の芳香族基、またはアルキル基)
2. A compound (A) having two or more epoxy groups in one molecule, a compound (B) having two or more phenolic hydroxyl groups in one molecule, an organic phosphine represented by the general formula (1) ( C), at least one compound (D) selected from boron oxide, boric acid, or boric acid ester,
And an inorganic filler (E) as an essential component, and all or a part of the component (B), the component (C), and the component (D) are melt-mixed in advance, and the epoxy resin molding material is characterized. [Chemical 1] (P is a phosphorus atom, R 1 , R 2 and R 3 are substituted or unsubstituted aromatic groups or alkyl groups)
【請求項3】 請求項2記載のエポキシ樹脂成形材料で
半導体素子を封止してなることを特徴とする半導体装
置。
3. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin molding material according to claim 2.
JP2002097549A 2002-03-29 2002-03-29 Thermosetting resin composition, epoxy resin molding material and semiconductor device Pending JP2003292732A (en)

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* Cited by examiner, † Cited by third party
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JP2007077291A (en) * 2005-09-14 2007-03-29 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2008088405A (en) * 2006-09-07 2008-04-17 Nitto Shinko Kk Resin composition, heat conductive sheet, highly heat conductive adhesive sheet with metal foil and highly heat conductive adhesive sheet with metal plate
JP2012111960A (en) * 2006-09-07 2012-06-14 Nitto Shinko Kk Method of manufacturing semiconductor module to which highly heat conductive adhesive sheet with metal foil or highly heat conductive adhesive sheet with metal plate is adhered
JP2012162718A (en) * 2006-09-07 2012-08-30 Nitto Shinko Kk Method for manufacturing semiconductor module having high-heat conduction adhesive sheet with metal foil or high-heat conduction adhesive sheet with metal plate adhered thereon
KR20230076773A (en) 2021-11-24 2023-05-31 신에쓰 가가꾸 고교 가부시끼가이샤 Heat-curable epoxy resin composition and heat-curable epoxy resin sheet

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007077291A (en) * 2005-09-14 2007-03-29 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2008088405A (en) * 2006-09-07 2008-04-17 Nitto Shinko Kk Resin composition, heat conductive sheet, highly heat conductive adhesive sheet with metal foil and highly heat conductive adhesive sheet with metal plate
JP2012111960A (en) * 2006-09-07 2012-06-14 Nitto Shinko Kk Method of manufacturing semiconductor module to which highly heat conductive adhesive sheet with metal foil or highly heat conductive adhesive sheet with metal plate is adhered
JP2012162718A (en) * 2006-09-07 2012-08-30 Nitto Shinko Kk Method for manufacturing semiconductor module having high-heat conduction adhesive sheet with metal foil or high-heat conduction adhesive sheet with metal plate adhered thereon
KR20230076773A (en) 2021-11-24 2023-05-31 신에쓰 가가꾸 고교 가부시끼가이샤 Heat-curable epoxy resin composition and heat-curable epoxy resin sheet

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