JP2829909B2 - Resist processing method and resist processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for resist processing for improving the line width stability of a resist pattern through temperature control and process time control of a resist coating / developing apparatus of a semiconductor device.

2. Description of the Related Art In the field of semiconductor device manufacturing, design and
Rule reduction is progressing at an accelerating pace, and the next generation of 64
0.35μm for MDRAM, 256M of next generation
In DRAM, a fine processing technology capable of achieving a minimum processing size of about 0.25 μm is required, and in order to realize such fine processing, photolithography technology is important.
As this photolithography, far ultraviolet lithography using a deep ultraviolet light source such as a KrF excimer laser beam (λ = 248 nm) is used. In the above-mentioned advanced microfabrication, the accuracy required for a resist pattern is generally about ± 10% of the design rule. For example, in the design rule of 0.35 μm, the required accuracy is ± 0.035 μm.
By the way, the above-mentioned deterioration factors of the required accuracy extend to all areas of photolithography such as exposure, resist coating, and development. Among them, the problems to be solved in relation to the resist coating / developing apparatus (coater / developer) include:
Wafer environment control for achieving uniform resist film thickness and resist development rate, and uniform resist film thickness and resist development rate can be mentioned. Such a problem becomes particularly important when a chemically amplified resist material is used as a resist material for excimer laser lithography. This is because a very small amount of an acid catalyst involved in the resist reaction of the chemically amplified resist material causes a slight change in the wafer atmosphere to greatly affect the pattern accuracy. Therefore, in the resist coating / developing apparatus, various measures for controlling the wafer environment are taken. For example, a resist coating / developing apparatus shown in FIG. 6 includes a carrier station (C / S) for loading and unloading wafers from a cassette containing a large number of wafers, and a plurality of processing units for executing continuous individual processes. And a transport system (H) for loading and unloading wafers into and from each processing unit and exposure apparatus, and an interface (I / F) for loading and unloading wafers from and to other process units. The processing unit includes a hydrophobizing unit (HMDS) for performing hexamethyldisilazane treatment for improving the adhesion between the wafer and the resist material layer, a resist coating unit (Coat), a heating unit (HP), and a developing unit ( Dev), and a cooling / temperature control unit (C). The transfer system (H) includes a transfer arm (A) for handling a wafer. This transfer arm (A) is thermally isolated from the heating unit (HP),
It is maintained almost equal to the temperature in the room, ± 0.2
Thermal stability of about ° C is maintained. The above-mentioned heating unit (HP) has a built-in hot plate which is generally heated to 80 to 120 ° C., pre-bake for stabilizing resist sensitivity and remaining film ratio by volatilizing a solvent of a resist coating film, and resist after exposure. PEB for promoting the reaction
(Post-exposure heat treatment) or a heat treatment such as post-baking for improving the heat resistance and dry etching resistance of the formed resist pattern. In addition, the cooling /
The temperature control unit (C) has a built-in metal cooling plate that is generally maintained at 20 to 25 ° C. by circulating temperature control water inside, and controls the temperature of the wafer before resist coating or development or the above-described process. Is used for cooling the wafer after the completion of each heat treatment and hydrophobic treatment. In such a resist coating / developing apparatus, the process parameters of each unit are strictly managed. For example, in a semiconductor device based on a 0.35 μm design rule, uniformity of a resist film thickness of ± 2.3 nm and a line width of ± 0.035 μm is required. The process is controlled with an accuracy of ± 0.1 ° C., and the process time is controlled with an accuracy of 0.1 second or less. In addition, since the heat treatment such as pre-bake or PEB is a parameter that affects the sensitivity of the resist, the process time in a heating unit for performing these is also strictly controlled.

As described above, in the conventional resist coating / developing apparatus, the process parameters in each unit are strictly controlled. However,
In order to further improve the control of the temperature of the wafer carried into the resist coating unit and the developing unit and the control of the heating time in a total sense, there are the following problems.
For example, the transfer arm (A) of the transfer system (H) shown in FIG.
The temperature gradually rises due to the heat storage effect while repeatedly carrying out the wafer after the pre-bake or PEB from the heating unit (HP). Therefore, the same transfer arm (A)
When the wafer whose temperature has been controlled from the cooling / temperature control unit (C) is carried out and the wafer is carried into the resist coating unit and the developing unit, the temperature of the wafer becomes approximately 0.5 for several tens of seconds while the wafer is held. ~ 1.5 ° C. It is known that the resist film thickness generally varies at a rate of 5 to 10 nm / ° C.
± 2 permissible in 35 μm design rules.
The resist film thickness fluctuates far beyond the fluctuation range of 3 nm. The total heating time varies in the following cases. That is, if the transfer arm (A) is engaged in loading and unloading wafers in another rate-determining step,
The wafer after the heat treatment may not be taken out of the heating unit (HP) or may not be immediately sent to the next cooling / temperature control unit (C) even after being taken out. This is equivalent to a substantial increase in the heating time. In particular, when using a chemically amplified resist that is easily affected by the atmosphere of the wafer, exposing the wafer to the open air for a long time at a high temperature causes the deactivation of the acid catalyst, etc., and greatly degrades the line width stability. Becomes Accordingly, an object of the present invention is to provide a resist processing method and a resist processing apparatus capable of overcoming these problems and forming a resist pattern having excellent line width stability.

A problem with the conventional temperature control as described above is that a common transfer system is used for loading and unloading wafers to and from the cooling / temperature control unit and the heating unit. Is limited by another rate-determining step. The present inventors have thought that this problem can be solved by assigning an independent dedicated transfer system to transfer a wafer in a portion that is easily affected by temperature and time in other steps, and have come to propose the present invention. .
That is, the resist processing method of the present invention comprises at least one
Heating steps, at least one cooling / temperature regulating step,
When performing a predetermined resist process on a substrate while sequentially transporting the substrate using a transport system among three or more types of processes including at least one other process, the heating process and the cooling / temperature control are performed. Between the steps, a dedicated transfer system independent of the main transfer system used between the other steps is used.
Here, the heating step typically includes a pre-bake step for volatilizing a solvent of a resist coating film to stabilize a resist sensitivity and a remaining film rate, and a PEB (post-exposure) for advancing a resist reaction after exposure. (Heat treatment, post-exposure bake step) and / or post-bake step for improving the heat resistance and dry etching resistance of the formed resist pattern. Further, specific examples of the other steps include a resist coating step and a developing step. In each step, a dedicated transport system can be used between the cooling / temperature controlling step, and these steps can be performed. A dedicated transfer system independent of the main transfer system can be provided between the cooling / temperature control steps. You. It is preferable that the process time in each step connected by the dedicated transfer system is kept constant based on the operation of the dedicated transfer system. The above method is of course effective in the case where the resist material layer is a conventionally used g-line or i-line photoresist material layer, but in particular, a chemically amplified resist material particularly sensitive to the wafer environment. It is effective when it is a layer. The above-described resist processing method can be actually performed using the following resist processing apparatus. That is,
The resist processing apparatus includes at least one heating unit that heats the substrate, at least one cooling / temperature control unit that performs cooling / temperature control of the substrate, and at least one processing unit that performs other processing, A main transport system for carrying substrates in and out of the apparatus, wherein the heating unit and the cooling /
A dedicated transfer system independent of the main transfer system is provided between the temperature control unit and the temperature control unit. Here, the heating unit is
Typically, the unit performs at least one of a hydrophobic treatment, a pre-bake, a post-exposure bake, and a post-bake of the substrate. Further, specific examples of the processing unit for performing the other processing include a resist coating unit or a developing unit, and a dedicated transfer independent of the main transfer system between these units and the cooling / temperature control unit. A system can be provided. Further, it is extremely effective to have operation control means for maintaining the process time in each unit connected by the dedicated transport system at a constant value based on the operation of the dedicated transport system.

According to the resist processing method and the resist processing apparatus of the present invention, since the transfer for sending a wafer to a process or a unit having a greatly different processing temperature is performed by using a dedicated transfer system independent of others, the temperature is raised. Conventional inconveniences such as the transfer arm contacting the temperature-controlled wafer and raising the temperature are avoided. Specifically, a process flow of (hydrophobic treatment of wafer in hydrophobic treatment unit) → (wafer temperature regulation in cooling / temperature regulation unit) → (resist coating in resist coating unit) or (PEB in heating unit) In the process flow of → (wafer temperature control in cooling / temperature control unit) → (resist development in developing unit), transfer between units is performed by an individual dedicated transfer system. The thermal separation between units becomes clearer. In addition, by using the dedicated transport system in this way, the connected processes are not affected by other rate-limiting processes. Therefore, for example, a wafer that has been subjected to various types of baking in the heating unit is not left in the heating unit as it is, and a high-temperature wafer is not exposed to the outside air for a long time without being carried into the cooling / temperature control unit. As a result, accurate resist film thickness management, line width management, and remaining film thickness management become possible.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described. Embodiment 1 In this embodiment, a heating unit (HP) for performing PEB,
A resist processing apparatus in which a cooling / temperature control unit (C) for cooling or controlling the temperature of a wafer is connected by a dedicated transfer system and a resist processing method using the resist processing apparatus will be described with reference to FIG. In this apparatus, a plurality of processing units for performing a predetermined resist process on a wafer are arranged on both sides of the main transport system 2 in the long side direction, and the wafer is further provided at one end in the short side direction to another process unit or an exposure apparatus. Interfaces (I / F) 1 and 4 for carrying in and out are arranged. One of the plurality of processing units is a cooling / temperature control unit (C) 5 containing a cooling plate. The cooling plate also has a function of a wafer stage for transferring a wafer. Since the type and number of the other units 9 can be appropriately selected according to a desired process, the details are not particularly specified in this figure, but are shown in a halftone color as a whole. The main transfer system 2 is provided with a transfer arm 3 capable of changing the direction of 360 ° and moving forward and backward, and unloads a wafer to and from each unit including the cooling / temperature control unit (C) 5. To enter. The above-mentioned apparatus is composed of the above-mentioned cooling / temperature control unit (C) 5 and a heating unit (H
P) 8 is a dedicated transport system 6 independent of the main transport system 2
Are connected with each other. The dedicated transfer system 6 includes a transfer arm 7 capable of changing the direction in the 180 ° direction and moving forward and backward. In FIG. 1, the heating unit (HP) 8 is separated from the processing line in which other processing units are arranged, and is placed on a processing line branched from the cooling / temperature control unit (C) 5. The configuration of the device is drawn for convenience, and the planar configuration of the device is not necessarily limited in this way. For example, the heating unit (HP) 8 is arranged in the same plane processing line as the other processing units, and only the main transport system between the heating unit (HP) 8 and the cooling / temperature control unit (C) 5 is provided. A dedicated transport system different from 2 may be used. Further, the cooling / temperature control unit (C) 5 and the heating unit (HP) 8 may be stacked in two layers in the direction perpendicular to the paper surface, and a dedicated transport system may be provided between the two units. The operation at the time of using the above device is as follows. First, the wafer after the exposure is carried in by the transfer arm 3 of the main transfer system 2 via, for example, the interface (I / F) 4 and placed on the cooling plate of the cooling / temperature control unit (C) 5. . At this stage, since the operation to be performed next is PEB, precise temperature control is unnecessary,
The wafer is immediately carried into the heating unit (HP) 8 by the transfer arm 7 of the dedicated transfer system 6. After the PEB for a predetermined time is completed in the heating unit (HP) 8, the wafer is transferred again to the cooling / temperature control unit (C) 5 by the dedicated transfer system 6 and cooled. This transfer is performed irrespective of the occupation state of the transfer arm 3 of the main transfer system 2. When the temperature of the wafer is controlled to the same level as the clean room temperature,
These are transported to the developing unit by the main transport system 2.
In this case, if the developing unit is one of the other units 9 shown in halftone in the drawing, the wafer is transported there, and if the developing unit is outside the above-mentioned apparatus, it is carried out, for example, via an interface (I / F) 1. You. According to such an apparatus and method of use, since the main transfer system 2 handles only the wafer whose temperature has been adjusted, there is no risk of raising the temperature of the wafer before being loaded into the developing unit. Even if the main transfer system 2 is used to transfer another wafer, the heating unit (HP)
The wafer which has completed the PEB in 8 is immediately taken out by the dedicated transfer system 6 after a predetermined time, and is immediately carried into the cooling / temperature control unit (C) 5, so that the heating unit (H
The heating time in P) 8 is exactly respected, and the wafer is prevented from being left in the open air at a high temperature. Using this apparatus, PEB-1 of a novolak-based positive photoresist material layer (manufactured by Fuji Hunt Co .; trade name: FH-EX1) for excimer laser lithography is actually used.
After the development and development, a line width uniformity of ± 0.015 μm was able to be achieved in a line pattern having a width of 0.35 μm. Embodiment 2 In this embodiment, a heating unit (H
P) and a cooling / temperature control unit (C) for controlling the same number of wafers by using a common dedicated transfer system to enable parallel processing and a method of using the same. This will be described with reference to FIG. This apparatus comprises a main transfer system 32 having a transfer arm 33, and a plurality of processing units arranged on one side in the long side direction of the main transfer system 32 for performing processing not involving heating / cooling on a resist material layer on a wafer. 39, a plurality of cooling / temperature control units (C) 35 ₍₁₎ , 35 ₍₂₎ , 35 ₍₃₎ ,.
35 _(n) , a dedicated transfer system 36 arranged on the back side thereof in parallel with the main transfer system 32, and the cooling / temperature control units (C) 35 ₍₁₎ , 35 _{( 2)} , 3
5 ₍₃₎ ,..., 35 _(n) heating units (HP) 38 ₍₁₎ , 38 ₍₂₎ , 38 ₍₃₎ ,.
, 38 _(n) , interfaces (I / F) 31, 3 at one end of the main transfer system 32 in the short side direction for loading / unloading a wafer with respect to another process unit or an exposure apparatus.
4 as a main component. In addition, the heating unit (HP)
38 ₍₁₎ , 38 ₍₂₎ , 38 ₍₃₎ ,..., 38 _(n)
The cooling / temperature control unit (C) 35 ₍₁₎ , 35 ₍₂₎ , 3
5 ₍₃₎ ,..., 35 _(n) may be stacked in two layers, and a dedicated transport system in the vertical direction may be provided between the two. The operation at the time of using the above device is as follows. First, the exposed wafers are loaded one by one by the transfer arm 33 of the main transfer system 32 via, for example, an interface (I / F) 34 and cooled / temperature-controlled units (C) 35 ₍₁₎ , 35 _{(2 ) )} , 3
5 ₍₃₎ ,..., 35 _(n) are placed in chronological order on the cooling plate. Subsequently, the corresponding heating units (HP) 38 ₍₁₎ , 38 ₍₂₎ , 38 ₍₃₎ ,... Are sequentially arranged by the transfer arm 37 of the dedicated transfer system 36 from the placed wafer.
・ ・, 38 _(n) . This heating unit (H
P) 38 ₍₁₎ , 38 ₍₂₎ , 38 ₍₃₎ , ..., 38 _(n)
After the PEB for a predetermined time is completed, the cooling / temperature control units (C) 35 ₍₁₎ , 35 ₍₂₎ , 35 ₍₃₎ ,.
It is transported to _(n) and cooled. When the temperature of the wafer is adjusted to the same level as the room temperature of the clean room, these are sequentially transferred to the developing unit using the main transfer system 32. According to such an apparatus and method of use, in addition to the effect of improving the temperature controllability of the wafer as described in the first embodiment, the throughput can be significantly improved by the parallel processing.
Using this apparatus, PEB and development of a novolak-based positive-type photoresist material layer (manufactured by Fuji Hunt Co .; trade name: FH-EX1) for excimer laser lithography were performed. A line width uniformity of ± 0.015 μm was achieved in the pattern. Embodiment 3 In this embodiment, a resist processing apparatus in which a resist coating unit (Coat) and a cooling / temperature control unit (C) are connected by a dedicated transport system and a method of using the same will be described with reference to FIG. The reference numerals in FIG. 3 are partially common to those in FIG. In this apparatus, one of a plurality of processing units arranged around the main transfer system 2 is provided with a cooling unit.
A cooling / temperature control unit (C) 10 incorporating a plate. Further, this apparatus is characterized in that the cooling / temperature control unit (C) 10 is connected to a resist coating unit (Coat) 13 by a dedicated transfer system 11 independent of the main transfer system 2. This dedicated transport system 11
Has a built-in transfer arm 12 equal to the temperature of the clean room. The operation at the time of using the above device is as follows. First, the wafer that has been subjected to the HMDS (hexamethyldisilazane) treatment and cooling is transferred to the transfer arm 3 of the main transfer system 2.
From the hydrophobization unit. The hydrophobizing unit may be any of the other units 9 or a unit outside the interfaces (I / F) 1 and 4. Next, the wafer is placed on the cooling plate of the cooling / temperature control unit (C) 10 by the transfer arm 3 and the temperature is controlled. The temperature-controlled wafer is carried into the resist coating unit (Coat) 13 by the dedicated transfer system 11. The wafer on which the resist application has been completed is again carried into the cooling / temperature control unit (C) 10 by the dedicated transfer system 11, and then transferred by the main transfer system 2 to the heating unit (HP) for performing pre-baking. This heat treatment unit may be any one of the other units 9 or an interface (I /
F) The external units 1 and 4 may be used. According to such an apparatus and method of use, the cooling / temperature control unit (C) 10 to the resist coating unit (Coat) 13
The temperature of the transfer arm 12 of the dedicated transfer system 11 for transferring the wafer whose temperature has been adjusted is always equal to the room temperature of the clean room. Therefore, the wafer temperature at the time of resist application is always constant, and the resist film thickness can be precisely controlled. When a pattern of a chemically amplified photoresist material layer (manufactured by Shipley Co., Ltd .; XP8843) was actually formed using this apparatus, ± 2.
A film thickness uniformity of 0 nm could be achieved. Embodiment 4 In this embodiment, a resist processing apparatus in which a resist developing unit (Dev) and a cooling / temperature adjusting unit (C) are connected by a dedicated transport system and a method of using the resist processing apparatus will be described with reference to FIG. The reference numerals in FIG. 4 are partially common to those in FIG. In this apparatus, one of a plurality of processing units arranged around the main transport system 2 is a cooling / temperature control unit (C) 14 having a cooling plate built therein. Further, the apparatus is characterized in that the cooling / temperature control unit (C) 14 is connected to the developing unit (Dev) 17 by a dedicated transport system 15 independent of the main transport system 2. The dedicated transfer system 15 has a built-in transfer arm 16 equal to the temperature of the clean room. The operation at the time of using the above device is as follows. First, the PEB and the cooled wafer are carried out of the heating unit (HP) by the transfer arm 3 of the main transfer system 2. This heating unit (HP) is provided with the other unit 9 described above.
Or a unit external to the interfaces (I / F) 1 and 4. Next, the wafer is placed on the cooling plate of the cooling / temperature control unit (C) 14 by the transfer arm 3 and the temperature is controlled. The temperature-controlled wafer is carried into the developing unit (Dev) 17 by the dedicated transfer system 15. The wafer after the development is transported again into the cooling / temperature adjusting unit (C) 14 by the dedicated transport system 15 and then transported to the heating unit (HP) for performing post-baking by the main transport system 2. This heat processing unit may be any one of the other units 9 or a unit outside the interfaces (I / F) 1 and 4.
According to such an apparatus and method of use, the transfer arm 1 of the dedicated transfer system 15 for transferring the temperature-controlled wafer from the cooling / temperature control unit (C) 14 to the developing unit (Dev) 17.
The temperature of 6 is always equal to the room temperature of the clean room. Therefore, the wafer temperature during development is always constant, and the resist development speed can be precisely controlled. When a pattern of a chemically amplified photoresist material layer (manufactured by Shipley Co., Ltd., XP8843) was actually formed using this apparatus, the line pattern having a width of 0.25 μm was ± 0.
A line width uniformity of 010 μm could be achieved. Embodiment 5 In this embodiment, a resist processing apparatus in which a hydrophobic processing unit (HMDS) and a cooling / temperature control unit (C) are connected by a dedicated transport system and a method of using the resist processing apparatus will be described with reference to FIG. . The reference numerals in FIG. 5 are partially common to those in FIG. In this apparatus, one of a plurality of processing units arranged around the main transport system 2 is a cooling / temperature control unit (C) 18 having a cooling plate built therein. Further, in the above-mentioned apparatus, the cooling / temperature control unit (C) 18 is provided with a hexamethyldisilazane vapor supply system and a hot plate by a dedicated transfer system 19 independent of the main transfer system 2. Unit (HMD
S) It is characterized by being connected to 21. The dedicated transfer system 19 has a built-in transfer arm 20. The operation at the time of using the above device is as follows. First, a wafer is loaded from the carrier station by the transfer arm 3 of the main transfer system 2 via, for example, the interface (I / F) 1. Next, the wafer is placed on the cooling plate of the cooling / temperature control unit (C) 18 by the transfer arm 3. At this stage, no temperature control is required. Next, the wafer is carried into the hydrophobizing unit (HMDS) 21 by the dedicated transfer system 19. The wafer that has been subjected to the hydrophobizing treatment is again carried into the cooling / temperature control unit (C) 18 by the dedicated transfer system 19 and temperature-controlled. The wafer whose temperature has been adjusted is transferred by the transfer system 2 to the resist coating unit. This resist coating unit may be any of the other units 9 or a unit external to the interfaces (I / F) 1 and 4. According to such an apparatus and method of use, the main transport system 2
Since only the wafer whose temperature has been adjusted is handled, there is no fear that the temperature of the wafer before being carried into the resist coating unit is raised. Therefore, the wafer temperature at the time of resist application is always constant, and the resist film thickness can be precisely controlled. When a pattern of a chemically amplified photoresist material layer (manufactured by Shipley; product name: XP8843) was actually formed using this apparatus, a line width uniformity of ± 0.010 μm was achieved in a 0.25 μm line pattern. We were able to. As described above, the present invention has been described based on the five examples, but the present invention is not limited to these examples. For example, in each of the above-described embodiments, a dedicated transport system is provided only between two specific types of units, but a configuration in which these embodiments are combined is also possible. That is, the resist processing having a dedicated transport system both between the cooling / temperature control unit (C) and the resist coating unit (Coat) and between the heating unit (HP) and the cooling / temperature control unit (C). An apparatus or the like can be configured.

As is apparent from the above description, according to the present invention, in each step related to resist processing,
It is possible to perform much more precise temperature control and process time control than before. Therefore, it is possible to accurately and reproducibly manage the thickness, line width, and remaining film thickness of the resist pattern, and even when using a chemically amplified resist material that is greatly affected by the wafer environment. The reliability of the formation is greatly improved. The present invention greatly contributes to higher integration and higher performance of a semiconductor device.

[Brief description of the drawings]

FIG. 1 shows a cooling / temperature control unit (C) and a heating unit (H)
FIG. 9 is a schematic plan view showing a configuration example of a resist processing apparatus having a dedicated transport system between the apparatus and P).

FIG. 2 is a schematic plan view showing a configuration example of the present resist processing apparatus having a common dedicated transport system between a plurality of cooling / temperature control units (C) and heating units (HP).

FIG. 3 is a schematic plan view showing a configuration example of a resist processing apparatus having a dedicated transport system between a cooling / temperature control unit (C) and a resist coating unit (Coat).

FIG. 4 shows a cooling / temperature control unit (C) and a developing unit (D).
FIG. 9 is a schematic plan view showing an example of the configuration of a resist processing apparatus having a dedicated transport system between the first and ev).

FIG. 5 is a schematic plan view showing a configuration example of a resist processing apparatus having a dedicated transport system between a cooling / temperature control unit (C) and a hydrophobizing unit (HMDS).

FIG. 6 is a schematic plan view showing a configuration example of a conventional general resist coating / developing apparatus.

[Explanation of symbols]

1, 4 Interface (I / F) 2, 32 Main transfer system 3, 33 Transfer arm (of main transfer system) 5, _10, 14, 18, 35 _{( 1) to} 35 _{( n)} ··· Cooling / temperature control unit (C) 6, 11, 15, 19, 36 · · · dedicated transfer system 7, 12, 16, 20, 37 · · · transfer arm (of dedicated transfer system) 8, 38 _{(1) to} 38 _(n): heating unit (HP) 13: resist coating unit (Coat) 17: developing unit (Dev) 21: hydrophobizing unit (HMDS)

Claims (14)

(57) [Claims] 1. A substrate is sequentially transferred using a transfer system among three or more types of steps including at least one heating step, at least one cooling / temperature adjusting step, and at least one other step. In the resist processing method of performing a predetermined resist process on the substrate, a dedicated transfer system independent of a main transfer system used between other steps is provided between the heating step and the cooling / temperature control step. And transferring the substrate using the method. 2. An exposure apparatus for exposing a resist applied on a substrate.
Exposure process, and a cooling / temperature control device from the exposure device
To perform the cooling temperature control and the cooling temperature control.
Transporting the substrate to a heating device, and heating the substrate to PE
B (post-exposure heat treatment) and cooling the heated substrate.
Transporting to the cooling / temperature control device and resist after the PEB
The and a step of performing development by the developing device, the transport between the heating apparatus to perform the cooling / temperature control apparatus and PEB
Is a dedicated transport system independent of the main transport system between other devices
2. The cash register according to claim 1, wherein the transfer is performed by using
Strike method. 3. An exposure apparatus for exposing a resist applied on a substrate.
Exposure step and heating the substrate with a heating device.
Transporting from the heating device to the cooling / temperature control device and cooling
A process of performing cooling temperature control in the temperature control device;
Transporting the substrate from the adjusting device to the developing device;
Cooling / temperature control from the developing device after developing
And transferring the substrate between the cooling / temperature adjusting device and the developing device.
Transfer using a dedicated transfer system independent of the main transfer system between
The method according to claim 1, wherein 4. An exposure apparatus for exposing a resist applied on a substrate.
And exposure / cooling / temperature control from the exposure apparatus
Transporting the cooling / temperature control device to the
Transfer the substrate to a heating device and heat it in the heating device
And transferring the substrate from the heating device to the cooling / temperature control device.
And developing the substrate with a developing device.
A, the cooling / temperature regulator and Other instrumentation conveyance between the heating device
Transfer using a dedicated transfer system independent of the main transfer system between
The method according to claim 1, wherein 5. A cooling / temperature controlling apparatus for transferring a substrate to a cooling / temperature controlling apparatus.
And the resist is applied to the substrate by the cooling / temperature control device.
The process of transporting the resist to the coating device;
The step of applying a resist by using the resist coating apparatus.
Transporting the substrate to a cooling / temperature controlling device, and transporting the substrate between the cooling / temperature controlling device and the resist coating device.
Use a dedicated transport system independent of the main transport system between other devices
2. The resist treatment according to claim 1, wherein
Method. 6. cooling the resist coated on the base plate / temperature
Transporting the cooling / temperature control to the control device,
Transporting the substrate from the apparatus to a heating device;
The pre-bake process in
Transporting the substrate to the cooling / temperature controlling device,
And carrying out development by a developing device, and transporting between the cooling / temperature controlling device and the heating device to other devices.
Transfer using a dedicated transfer system independent of the main transfer system between
The method according to claim 1, wherein 7. A cooling / temperature controlling device for transferring a substrate to a cooling / temperature controlling device.
And transporting the substrate to a hydrophobizing device,
Hydrophobizing the substrate in a hydrophobizing apparatus;
Conveyed from the hydrophobizing device to the cooling / temperature control device and cooled
Process and the resist coating device
The process of coating the plate and the exposure by the exposure device
And carrying out development between the cooling / temperature control device and the resist coating device.
Use a dedicated transport system independent of the main transport system between other devices
2. The resist treatment according to claim 1, wherein
Method. 8. At least one heating unit for heating the substrate, at least one cooling / temperature adjusting unit for cooling or adjusting the temperature of the substrate, and at least one unit for performing other processing.
In a resist processing apparatus having a base processing unit and a main transport system for carrying a substrate in and out of the apparatus, an independent of the main transport system is provided between the heating unit and the cooling / temperature control unit. A resist processing apparatus provided with a dedicated transport system. 9. A resist for applying a resist to a substrate.
And the resist applied on the substrate is exposed.
An exposure unit that illuminates and a development unit that develops the resist
A cooling / temperature control unit for cooling and controlling the substrate;
A heating unit for heating the substrate to perform PEB, and transporting between the cooling / temperature control unit and the heating unit.
Dedicated transfer independent of the main transfer system between other units
9. The method according to claim 8, wherein the transfer is performed using a system.
Gist processing equipment. 10. A resist for applying a resist on a substrate.
Exposure of the coating unit and the resist applied on the substrate
Exposure unit for developing and developing unit for developing resist
A cooling / temperature control unit for controlling the temperature of the substrate;
A heating unit for heating the plate, and a transfer unit between the cooling / temperature control unit and the developing unit.
Dedicated transfer independent of the main transfer system between other units
9. The method according to claim 8, wherein the transfer is performed using a system.
Gist processing equipment. 11. A cooling temperature control unit for controlling a cooling temperature of a substrate.
A hydrophobic processing unit for performing hydrophobic treatment on the substrate;
There is a resist coating unit for coating the resist on the substrate.
And, between the cooling / temperature control unit and hydrophobic processing unit
Transfers should be performed independently of the main transfer system between other units.
9. The method according to claim 8, wherein the transfer is performed by using a transfer system.
Resist processing equipment. 12. A resist for applying a resist on a substrate.
Exposure of the coating unit and the resist applied on the substrate
Exposure unit for controlling the cooling temperature of the substrate
Unit and heating unit for heating the substrate to perform PEB
And a developing unit for developing the resist, between the cooling / temperature control unit and the resist coating unit.
Transfer is independent of the main transfer system between other units.
9. The apparatus according to claim 8, wherein the transfer is performed using a dedicated transfer system.
The resist processing apparatus as described in the above. 13. A resist for applying a resist on a substrate.
Coating unit and heating unit for pre-bake
A cooling temperature control unit for controlling a cooling temperature of the substrate;
An exposure unit for exposing the resist applied on the plate,
A developing unit for developing the resist, and transporting between the cooling / temperature control unit and the heating unit.
Dedicated transfer independent of the main transfer system between other units
9. The method according to claim 8, wherein the transfer is performed using a system.
Gist processing equipment. 14. A resist for applying a resist on a substrate.
Exposure of the coating unit and the resist applied on the substrate
Exposure unit for heating and a heating unit for
A knit, and a cooling temperature control unit for controlling the cooling temperature of the substrate.
And transport between the cooling / temperature control unit and the heating unit.
Dedicated transfer independent of the main transfer system between other units
9. The method according to claim 8, wherein the transfer is performed using a system.
Gist processing equipment.