JP2017130642A - イメージセンサー - Google Patents
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- JP2017130642A JP2017130642A JP2016108491A JP2016108491A JP2017130642A JP 2017130642 A JP2017130642 A JP 2017130642A JP 2016108491 A JP2016108491 A JP 2016108491A JP 2016108491 A JP2016108491 A JP 2016108491A JP 2017130642 A JP2017130642 A JP 2017130642A
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- 238000001514 detection method Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
10…検出層
11…基板
111…検出ユニット
12…反射防止層
13…誘電層
14…遮蔽素子
20…フィルターユニット
20а…赤色フィルターユニット
20b…緑色フィルターユニット
20c…青色フィルターユニット
30…マイクロレンズ
40…格子構造
50…格子構造
51…基層
511…格子領域
512…グリッド領域
52…格子部分
52а…格子部分
52b…格子部分
52c…格子部分
521…下表面
522…上表面
523…傾斜面
Claims (10)
- イメージセンサーであって、
検出層、
前記検出層上の複数のフィルターユニット、および、
前記複数のフィルターユニット上に設置され、複数の格子部分を有する格子構造を有し、
前記複数の格子部分は、複数の格子グループを形成し、
前記複数の格子グループは、互いに隔てられることを特徴とするイメージセンサー。 - 前記複数の格子グループは、それぞれ、少なくとも25個の格子部分を有することを特徴とする請求項1に記載のイメージセンサー。
- 前記検出層上に設置され、前記複数のフィルターユニットのそれぞれを囲む格子構造を有し、
前記複数の格子グループは、前記複数のフィルターユニットのひとつとそれぞれ位置合わせされることを特徴とする請求項1に記載のイメージセンサー。 - 前記複数のフィルターユニットと位置合わせされる複数のマイクロレンズを有し、
前記格子構造は、前記複数のマイクロレンズ上に設置される基層を有し、
前記複数の格子部分が前記基層上に設置されることを特徴とする請求項3に記載のイメージセンサー。 - 前記複数のフィルターユニットは、第一フィルターユニットを有し、
前記複数の格子グループは、前記第一フィルターユニット上に設置される第一格子グループを有し、
前記第一フィルターユニット、および、前記第一格子グループは、同じ材料を有することを特徴とする請求項1に記載のイメージセンサー。 - 前記複数のフィルターユニットは、第二フィルターユニットを有し、
前記複数の格子グループは、前記第二フィルターユニット上に設置される第二格子グループを有し、
前記第二フィルターユニット、および、前記第二格子グループは、同じ材料を有することを特徴とする請求項5に記載のイメージセンサー。 - 前記複数の格子部分は、前記複数のフィルターユニットに近接する下表面、前記複数のフィルターユニットから離れた上表面を有し、
前記複数の格子部分の各幅は、前記下表面から前記上表面に向かって減少することを特徴とする請求項1に記載のイメージセンサー。 - 前記複数の格子部分は、角錐、角錐台、円錐、または、円錐台の形状に形成され、
前記上表面は、平らな面、または、点であることを特徴とする請求項7に記載のイメージセンサー。 - 前記複数の格子部分は、角錐、角錐台、円錐、または、円錐台の形状に形成され、
前記下表面は、円形、楕円形、多角形、長方形、または、正方形であることを特徴とする請求項7に記載のイメージセンサー。 - 前記複数の格子部分のアスペクト比は1:4より大きく、1:20より小さいことを特徴とする請求項1に記載のイメージセンサー。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/001,924 | 2016-01-20 | ||
US15/001,924 US9837455B2 (en) | 2016-01-20 | 2016-01-20 | Image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017130642A true JP2017130642A (ja) | 2017-07-27 |
JP6371792B2 JP6371792B2 (ja) | 2018-08-08 |
Family
ID=59314924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016108491A Active JP6371792B2 (ja) | 2016-01-20 | 2016-05-31 | イメージセンサー |
Country Status (4)
Country | Link |
---|---|
US (1) | US9837455B2 (ja) |
JP (1) | JP6371792B2 (ja) |
CN (1) | CN106992193B (ja) |
TW (1) | TWI588981B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3466052A4 (en) * | 2016-06-07 | 2020-02-19 | Airy3d Inc. | LIGHT FIELD IMAGE DEVICE AND METHOD FOR DEPTH DETECTION AND THREE-DIMENSIONAL IMAGE |
US9985072B1 (en) * | 2016-11-29 | 2018-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor with dual damascene grid design having absorption enhancement structure |
WO2019018851A1 (en) * | 2017-07-21 | 2019-01-24 | California Institute Of Technology | PLANAR ULTRAMINOUS PHOTOGRAPHIC CAMERA WITHOUT LENS |
US11882371B2 (en) | 2017-08-11 | 2024-01-23 | California Institute Of Technology | Lensless 3-dimensional imaging using directional sensing elements |
US10510797B2 (en) * | 2017-10-31 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor image sensor |
US11158661B2 (en) | 2019-09-19 | 2021-10-26 | Omnivision Technologies, Inc. | Image sensor with micro-structured color filter |
US20220123037A1 (en) * | 2020-10-15 | 2022-04-21 | Visera Technologies Company Limited | Image sensing device |
US20230154956A1 (en) * | 2021-11-16 | 2023-05-18 | Visera Technologies Company Ltd. | Image sensor |
TWI824622B (zh) * | 2022-07-15 | 2023-12-01 | 力成科技股份有限公司 | 影像感測器封裝結構 |
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-
2016
- 2016-01-20 US US15/001,924 patent/US9837455B2/en active Active
- 2016-04-08 TW TW105111021A patent/TWI588981B/zh active
- 2016-04-15 CN CN201610235997.8A patent/CN106992193B/zh active Active
- 2016-05-31 JP JP2016108491A patent/JP6371792B2/ja active Active
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WO2009140099A2 (en) * | 2008-05-14 | 2009-11-19 | International Business Machines Corporation | Methods for forming anti-reflection structures for cmos image sensors |
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JP2010239003A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 反射防止構造体の製造方法および固体撮像装置の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
CN106992193A (zh) | 2017-07-28 |
US20170207258A1 (en) | 2017-07-20 |
TWI588981B (zh) | 2017-06-21 |
US9837455B2 (en) | 2017-12-05 |
TW201727880A (zh) | 2017-08-01 |
CN106992193B (zh) | 2020-03-27 |
JP6371792B2 (ja) | 2018-08-08 |
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