JP2015026707A - Die-bonding film with dicing tape, and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a die-bonding film with dicing tape which makes possible to suppress the accumulation of an air bubbles (voids) at the boundary between a die-bonding film and an object to stick the film to after a sealing step even on condition that a high-temperature thermal treatment is performed for a long time, and to suppress the occurrence of crack, fracture or chip, or a combination thereof in a film even if the film is transported or stored while remaining refrigerated.SOLUTION: A die-bonding film with dicing tape comprises: a piece of dicing tape; and a die-bonding film. The die-bonding film includes a thermoplastic resin (a), and a thermosetting resin (b) having a viscosity of 0.1-50 Pa sec at 25°C. The thermosetting resin (b) consists of at least one resin selected from a group consisting of an epoxy resin and a phenol resin. The content of the thermosetting resin (b) is 1-50 wt.% to all the resin components. The die-bonding film with dicing tape has a storage elastic modulus of 0.05 MPa or larger at 260°C after having been hardened by one-hour heating at 170°C.

Description

  The present invention relates to a die bond film with a dicing tape and a method for manufacturing a semiconductor device.

  Conventionally, a silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in manufacturing a semiconductor device. Such a fixing process is performed by applying a paste-like adhesive on a die pad or the like of the lead frame, mounting a semiconductor chip thereon, and curing the paste-like adhesive layer.

  However, in the case of a paste-like adhesive, the coating amount, the coating shape, and the like vary greatly due to its viscosity behavior and deterioration. As a result, the thickness of the paste-like adhesive formed is not uniform, and the reliability of the bonding strength related to the semiconductor chip is poor. That is, when the application amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding process. On the other hand, when the application amount of the paste adhesive is too large, the paste adhesive is cast onto the semiconductor chip, resulting in poor characteristics, and the yield and reliability are lowered. Such a problem in the adhering process becomes particularly remarkable as the semiconductor chip becomes larger. Therefore, it is necessary to frequently control the amount of paste adhesive applied, which hinders workability and productivity.

  In this paste adhesive application step, there is a method in which the paste adhesive is separately applied to a lead frame or a formed chip. However, in this method, it is difficult to make the paste adhesive layer uniform, and a special apparatus and a long time are required for applying the paste adhesive. For this reason, a die bond film with a dicing tape is disclosed that adheres and holds a semiconductor wafer in the dicing process and also provides an adhesive layer for chip fixation necessary for the mounting process (see, for example, Patent Document 1 below).

  This type of die bond film with a dicing tape has a structure in which an adhesive layer (die bond film) is laminated on the dicing tape. The dicing tape has a structure in which an adhesive layer is laminated on a support base material. This die-bonding film with a dicing tape is used as follows. That is, after the semiconductor wafer is diced while being held by the die bond film, the support base is stretched, the semiconductor chip is peeled off together with the die bond film, and these are individually collected. Further, the semiconductor chip is bonded and fixed to an adherend such as a BT substrate or a lead frame through a die bond film.

JP-A-60-57642

In recent years, semiconductor chips have been mounted in multiple stages, and there is a tendency that a long time is required for the wire bonding process and the die bonding film curing process. When the die bond film of the die bond film with the dicing tape is processed at a high temperature for a long time in these steps and a sealing step with a sealing resin is performed as a subsequent step, bubbles (voids) are formed at the boundary between the die bond film and the adherend. May be accumulated. When performing a moisture-resistant solder reflow test performed as a reliability evaluation of semiconductor-related parts using a semiconductor device in which such voids have occurred, peeling occurs at the boundary, which is not sufficient for the reliability of the semiconductor device Become.
In addition, since such a die bond film is thermosetting, it is necessary to transport and store it in a refrigerator. However, the die bond film may be cracked, cracked or chipped at that time, and the usable film is reduced. There was also a problem that ended up.

  The present invention has been made in view of the above-described problems, and its purpose is that bubbles remain at the boundary between the die-bonding film and the adherend after the sealing process even under the condition of heat treatment at a high temperature for a long time. And a die-bonding film with a dicing tape capable of suppressing the occurrence of cracks, cracks, and chipping in the film even when refrigerated transported and stored, and a semiconductor device using the die-bonding film with the dicing tape It is in providing the manufacturing method of.

  The inventors of the present application have studied a die bond film with a dicing tape in order to solve the conventional problems. As a result, by adding a thermoplastic resin and a thermosetting resin having a specific viscosity to the die bond film, the die bond film and the adherend after the sealing step can be subjected to a heat treatment for a long time at a high temperature. It has been found that bubbles can be prevented from accumulating at the boundary, and that the film can be prevented from cracking, cracking and chipping even during refrigerated transport and storage, and the present invention is completed. It came to.

That is, the die bond film with a dicing tape according to the present invention is
A dicing tape with a dicing tape having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and a die-bonding film laminated on the pressure-sensitive adhesive layer,
The die bond film contains a thermoplastic resin (a) and a thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec,
The thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin,
The content of the thermosetting resin (b) with respect to all resin components is 1% by weight or more and 50% by weight or less,
The storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film is 0.05 MPa or more.

According to the said structure, a die-bonding film contains the thermosetting resin (b) whose viscosity in 25 degreeC is 0.1-50 Pa.sec by 1 to 50 weight% with respect to all the resin components. . Since the die-bonding film contains 1% by weight or more of the thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec with respect to all resin components, However, the reaction can be moderately suppressed, and bubbles (voids) can be prevented from accumulating at the boundary between the die bond film and the adherend after the sealing step.
Moreover, since the die-bonding film contains 1% by weight or more of the thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec with respect to all resin components, In addition, the film can be prevented from being cracked, cracked, or chipped. On the other hand, since the thermosetting resin (b) is contained in an amount of 50% by weight or less based on the total resin component, excessive tackiness can be suppressed and pick-up property can be improved.
Moreover, since the storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film is 0.05 MPa or more, the reliability in the moisture-resistant solder reflow test can be improved.

  Thus, according to the said structure, the said die-bonding film contains a thermoplastic resin (a) and the thermosetting resin (b) whose viscosity in 25 degreeC is 0.1-50 Pa.sec, The thermosetting resin (b) is at least one selected from the group consisting of an epoxy resin and a phenol resin, and the content of the thermosetting resin (b) with respect to all resin components is 1 wt% or more and 50 wt%. Since the storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film is 0.05 MPa or more, the die bond film after the sealing step even under the condition of heat treatment for a long time at high temperature It is possible to suppress the accumulation of air bubbles (voids) at the boundary between the substrate and the adherend, to improve the reliability in the moisture-resistant solder reflow test, and to crack the film during refrigerated transport and storage. It becomes possible to suppress the occurrence of cracks and chipping.

  The said structure WHEREIN: It is preferable that the said thermoplastic resin (a) is a functional group containing acrylic copolymer. When the thermoplastic resin (a) is a functional group-containing acrylic copolymer, crosslinking proceeds between the functional group and the thermosetting resin (b) during thermosetting. As a result, as a result of the low molecular component being cross-linked, the reliability in the heat-resistant solder reflow test can be improved.

  In the said structure, it is preferable that the said thermosetting resin (b) is a thermosetting resin represented by following Chemical formula (1).

（但し、式中、ｎは０〜１０の整数であり、Ｒ^１はそれぞれ独立してアリル基又はＨを示し、少なくとも１つはアリル基であり、ｍは１〜３の整数である。）

(In the formula, n is an integer of 0 to 10, R ¹ independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3).

  When the thermosetting resin (b) is a thermosetting resin represented by the above chemical formula (1), since it has an allyl group, the rate of progress of the thermosetting reaction is high due to the bulkiness of the allyl group. It is suppressed. As a result, it is possible to prevent the curing reaction from proceeding during transportation and storage.

  The said structure WHEREIN: It is preferable that the breaking elongation in 5 degreeC of the said die-bonding film is 10% or more. When the breaking elongation at 5 ° C. of the die bond film is 10% or more, it is possible to further suppress the occurrence of cracks, cracks, and chipping in the film even when refrigerated transported and stored.

  The said structure WHEREIN: It is preferable that the said adhesive layer contains the acrylic polymer which contains 2-ethylhexyl acrylate as a structural unit. In this invention, since the die bond film contains the thermosetting resin (b) whose viscosity in 25 degreeC is 0.1-50 Pa.sec, an adhesive layer and a die bond film adhere too much. There is a risk that. However, when the pressure-sensitive adhesive layer contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit, the peelability from the die bond film can be improved.

Moreover, the manufacturing method of the semiconductor device of the present invention includes a bonding step of bonding the die bond film of the die bond film with the dicing tape described above and the back surface of the semiconductor wafer,
Dicing the semiconductor wafer together with the die-bonding film with the dicing tape to form a chip-shaped semiconductor element;
Pickup process for picking up the semiconductor element together with the die bond film from the die bond film with the dicing tape,
A die-bonding step of die-bonding the semiconductor element on an adherend through the die-bonding film;
A wire bonding step of wire bonding to the semiconductor element;
And a step of sealing the semiconductor element.

  According to the said structure, the said die-bonding film contains a thermoplastic resin (a) and the thermosetting resin (b) whose viscosity in 25 degreeC is 0.1-50 Pa.sec, The said thermosetting property The resin (b) is one or more selected from the group consisting of epoxy resins and phenol resins, and the content of the thermosetting resin (b) with respect to all resin components is 1% by weight or more and 50% by weight or less, Since the storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film is 0.05 MPa or more, the die bond film and the adherend after the sealing step even under the condition of heat treatment for a long time at high temperature It is possible to suppress the accumulation of air bubbles (voids) at the boundary of the film, and to improve the reliability in the moisture-resistant solder reflow test. Furthermore, the film is cracked, cracked, and cracked during refrigerated transportation and storage. It is possible to suppress the occurrence.

  According to the die bond film with a dicing tape and the method for manufacturing a semiconductor device of the present invention, even when the heat treatment is performed for a long time at a high temperature, bubbles are accumulated at the boundary between the die bond film and the adherend after the sealing step. It is possible to suppress this, and to improve the reliability in the moisture-resistant solder reflow test. Further, it is possible to prevent the film from being cracked, cracked or chipped even during refrigerated transportation and storage.

It is a cross-sectional schematic diagram which shows the die-bonding film with a dicing tape which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the other die-bonding film with a dicing tape which concerns on the said embodiment. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip through the die-bonding film in the said die-bonding film with a dicing tape. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip three-dimensionally via the die-bonding film in the said die-bonding film with a dicing tape. It is a cross-sectional schematic diagram which shows the example which mounted two semiconductor chips with the die-bonding film through the spacer using the die-bonding film with a dicing tape.

  A die bond film 10 with a dicing tape according to the present embodiment has a structure in which a die bond film 3 is laminated on a dicing tape (see FIG. 1). The dicing tape has a structure in which an adhesive layer 2 is laminated on a substrate 1. The die bond film 3 is laminated on the adhesive layer 2 of the dicing tape.

<Die bond film>
The die bond film 3 contains a thermoplastic resin (a) and a thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec. The storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film 3 is 0.05 MPa or more, and preferably 0.07 MPa or more. In addition, the storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film 3 is not particularly limited, but is, for example, 2000 MPa or less. Since the storage elastic modulus at 260 ° C. after heat curing at 170 ° C. for 1 hour of the die bond film 3 is 0.05 MPa or more, the reliability in the moisture-resistant solder reflow test can be improved.

(Thermoplastic resin (a))
Examples of the thermoplastic resin (a) include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, functional group-containing acrylic copolymer, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, and ethylene-acrylic acid ester. Copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamideimide resin, or fluorine Examples thereof include resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, functional group-containing acrylic copolymers are particularly preferred. At the time of thermosetting, crosslinking proceeds between this functional group and the thermosetting resin (b). As a result, the low molecular component is cross-linked, so that the reliability in the heat-resistant solder reflow test can be improved.

  The functional group-containing acrylic copolymer is not particularly limited as long as it is an acrylic copolymer having a functional group. Examples of the functional group include a glycidyl group, a carboxyl group, and a hydroxyl group. The method for introducing the functional group into the functional group-containing acrylic copolymer is not particularly limited, and may be introduced by copolymerization of the functional group-containing monomer and other monomer components to prepare an acrylic monomer copolymer. Then, this copolymer and the compound having the functional group may be reacted and introduced. In view of the ease of preparation of the functional group-containing acrylic copolymer, introduction by copolymerization of the functional group-containing monomer and another monomer is preferable. As the functional group-containing monomer, a monomer having the functional group and having a copolymerizable ethylenically unsaturated bond can be suitably used. For example, glycidyl acrylate, glycidyl methacrylate, acrylic acid, hydroxyethyl acrylate, etc. Can be mentioned. The content of the functional group-containing monomer in the functional group-containing acrylic copolymer may be determined in consideration of the glass transition point (Tg) of the target functional group-containing acrylic copolymer.

  Examples of other monomers constituting the functional group-containing acrylic copolymer include alkyl acrylates having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, pentyl acrylate, and hexyl acrylate, Alkyl methacrylate having 1 to 8 carbon atoms such as methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, pentyl acrylate, hexyl acrylate, acrylonitrile, styrene, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, Carboxyl group-containing monomers such as itaconic acid, maleic acid, fumaric acid or crotonic acid, maleic anhydride Acid anhydride monomers such as itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxy (meth) acrylate Hydroxyl group-containing monomers such as hexyl, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -methyl acrylate , Styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) acryloyloxynaphthalene sulfonic acid, etc. Sulfonic acid group-containing monomer, or 2-hydroxyethyl acryloyl phosphate phosphoric acid group-containing monomers such as and the like. These other monomers may be used alone or in combination of two or more. Among the other monomers, it is preferable to include at least one of ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, and acrylonitrile. The mixing ratio is preferably adjusted in consideration of the glass transition point (Tg) of the copolymer.

  The glass transition point (Tg) of the functional group-containing acrylic copolymer is not particularly limited as long as appropriate adhesion between the die bond film and the silicon wafer is obtained, but is preferably −30 ° C. or higher and 40 ° C. or lower, 20 degreeC or more and 30 degrees C or less are more preferable. If the glass transition point is lower than −30 ° C., the functional group-containing acrylic copolymer may have tackiness at room temperature, and may be difficult to handle. On the other hand, when the glass transition point exceeds 40 ° C., the adhesive force to the silicon wafer may be reduced.

(Thermosetting resin (b))
The thermosetting resin (b) has a viscosity at 25 ° C. of 0.1 to 50 Pa · sec, and more preferably 0.5 to 40 Pa · sec. The content of the thermosetting resin (b) with respect to all resin components (all resin components of the die bond film) is 1% by weight or more and 50% by weight or less, and 1% by weight or more and 40% by weight or less. preferable. Since the die-bonding film 3 contains 1% by weight or more of the thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec with respect to all resin components, it is also stored when refrigerated and stored. It is possible to prevent the film from being cracked, cracked, or chipped. On the other hand, since the thermosetting resin (b) is contained in an amount of 50% by weight or less based on the total resin component, excessive tackiness can be suppressed and pick-up property can be improved.

  The thermosetting resin (b) is at least one selected from the group consisting of an epoxy resin and a phenol resin, and acts as a curing agent for the thermoplastic resin (a), particularly the functional group-containing acrylic copolymer. Those that do are preferred.

  Examples of the thermosetting resin (b) include a liquid phenol novolac resin, a liquid epoxy resin, a liquid isocyanate resin, and the like. Among these, a liquid phenol resin and a liquid epoxy resin are preferable, and a liquid phenol resin is particularly preferable. These can be used alone or in combination of two or more. In addition, liquid state means that the viscosity in 25 degreeC exists in the said range.

  Among the thermosetting resins (b), a thermosetting resin represented by the following chemical formula (1) is preferable.

（但し、式中、ｎは０〜１０の整数であり、Ｒ^１はそれぞれ独立してアリル基又はＨを示し、少なくとも１つはアリル基であり、ｍは１〜３の整数である。）

(In the formula, n is an integer of 0 to 10, R ¹ independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3).

The ratio of the number of allyl groups to the number of H in R ¹ is 1: 3 when expressed as (number of allyl groups) :( number of H) from the viewpoint of appropriately setting the viscosity within a desired range. It is preferable that
Moreover, it is preferable that the weight average molecular weights of the said thermosetting resin (b) are 100 or more and 5000 or less, More preferably, they are 200 or more and 3000 or less. By setting the weight average molecular weight of the thermosetting resin (b) to 100 or more and 5000 or less, the thermosetting resin (b) can be dispersed with good compatibility with other materials. Moreover, the shift to the dicing tape can be prevented. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.

  When the thermosetting resin (b) is a thermosetting resin represented by the above chemical formula (1), since it has an allyl group, the rate of progress of the thermosetting reaction is high due to the bulkiness of the allyl group. It is suppressed. As a result, it is possible to prevent the curing reaction from proceeding during transportation and storage of the die bond film 3.

  Specific examples of the thermosetting resin (b) include MEH-8000-4L, MEH-8000H, MEH-8015, MEH-8005 manufactured by Meiwa Kasei Co., Ltd. and XPL-4437E manufactured by Gunei Chemical Industry Co., Ltd. Can be mentioned.

  In the die bond film 3, an inorganic filler and an additive can be appropriately blended as necessary. Examples of the inorganic filler (inorganic filler) include silica, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum nitride, aluminum borate whisker, and alumina. Zinc oxide, boron nitride, crystalline silica, amorphous silica and the like. These can be used alone or in combination of two or more. Of these, aluminum oxide, aluminum nitride, alumina, zinc oxide, boron nitride, crystalline silica, amorphous silica, and the like are preferable from the viewpoint of improving thermal conductivity. The blending amount of the inorganic filler is preferably set to 0 to 95 parts by weight with respect to 100 parts by weight of the resin component. Particularly preferred is 0 to 90 parts by weight. When the die-bonding film 3 contains an inorganic filler, the hygroscopicity can be controlled.

  Examples of the additive include a flame retardant, a dye, a silane coupling agent, and an ion trap agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  The breaking elongation at 5 ° C. of the die bond film 3 is preferably 10% or more, and more preferably 15% or more. When the breaking elongation at 5 ° C. of the die bond film 3 is 10% or more, it is possible to further suppress the occurrence of cracks, cracks, and chipping in the film during refrigerated transportation and storage. Further, the elongation at break of the die bond film 3 at 5 ° C. is preferably 1500% or less, and more preferably 1000% or less from the viewpoint of handling.

  Further, the difference between the breaking elongation at 5 ° C. and the breaking elongation at 25 ° C. of the die bond film 3 is preferably less than 1000%, and more preferably less than 800%. If the difference in elongation at break is within the numerical range, wrinkles of the die bond film due to temperature changes can be suppressed.

  In addition, the measurement of the breaking elongation of 5 degreeC of a die-bonding film and the breaking elongation of 25 degreeC is based on the method as described in an Example.

  Although the thickness (in the case of a laminated body) of the die-bonding film 3 is not specifically limited, For example, it is about 3-200 micrometers, Preferably it is about 5-150 micrometers.

  The die bond film 3 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film until it is put into practical use. Further, the separator can be used as a supporting substrate when transferring the die bond films 3, 3 'to a dicing tape. The separator is peeled off when the workpiece is stuck on the die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

  In addition, as a die-bonding film with a dicing tape concerning this invention, in addition to the die-bonding film 3 shown in FIG. 1, the die-bonding film with a dicing tape which laminated | stacked die-bonding film 3 'only on the semiconductor wafer affixing part as shown in FIG. 11 configurations may be used.

<Dicing tape>
The dicing tape constituting the die-bonding films 10 and 11 with the dicing tape has a structure in which the pressure-sensitive adhesive layer 2 is laminated on the substrate 1. Hereinafter, it demonstrates in order of a base material and an adhesive layer.

(Base material)
The base material 1 may be a material having ultraviolet transparency, and serves as a strength matrix of the die-bonding films 10 and 11 with dicing tape. For example, polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.

  Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary. According to the resin sheet to which heat shrinkability is imparted by stretching treatment or the like, the adhesive area between the pressure-sensitive adhesive layer 2 and the die bond films 3 and 3 ′ is reduced by thermally shrinking the base material 1 after dicing, so that the semiconductor chip The collection of the (semiconductor element) can be facilitated.

  The surface of the substrate 1 is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, an adhesive substance described later) can be performed. The base material 1 can be used by appropriately selecting the same kind or different kinds, and a blend of several kinds can be used as necessary.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  It does not restrict | limit especially as an adhesive used for formation of the adhesive layer 2, For example, common pressure sensitive adhesives, such as an acrylic adhesive and a rubber adhesive, can be used. The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). Especially, it is preferable to contain 2-ethylhexyl acrylate as a structural unit. When the adhesive layer 2 contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit, the peelability from the die bond film 3 can be improved. In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  The pressure-sensitive adhesive layer 2 can be formed of a radiation curable pressure-sensitive adhesive. The radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and a portion 2a corresponding to the work pasting portion of the pressure-sensitive adhesive layer 2 shown in FIG. The difference in adhesive strength with the other part 2b can be provided by irradiating only with radiation.

  Further, by curing the radiation curable pressure-sensitive adhesive layer 2 in accordance with the die bond film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with radiation has a sufficient adhesive force, and forms the portion 2b.

  As described above, in the pressure-sensitive adhesive layer 2 of the die-bonding film 10 with the dicing tape shown in FIG. 1, the portion 2b formed of the uncured radiation-curable pressure-sensitive adhesive adheres to the die-bonding film 3 and is diced. Can be secured. In this way, the radiation curable pressure-sensitive adhesive can support the die bond film 3 for fixing a chip-like work (semiconductor chip or the like) to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the die bond film 11 with the dicing tape shown in FIG. 2, the portion 2b can fix the wafer ring.

  As the radiation-curable pressure-sensitive adhesive, those having a radiation-curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. As the radiation curable pressure sensitive adhesive, for example, an addition type radiation curable pressure sensitive adhesive in which a radiation curable monomer component or an oligomer component is blended with a general pressure sensitive pressure sensitive adhesive such as an acrylic pressure sensitive adhesive or a rubber pressure sensitive adhesive. An agent can be illustrated.

  Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol. Examples include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the radiation curable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30,000 are suitable. The compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type radiation curable adhesive described above, the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain or main chain or at the main chain terminal as a base polymer. Intrinsic radiation curable pressure sensitive adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components moving through the adhesive over time. It is preferable because an adhesive layer having a layered structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic radiation curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the radiation curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The radiation curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl Black Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of radiation curable pressure-sensitive adhesives include photopolymerizable compounds such as addition polymerizable compounds having two or more unsaturated bonds and alkoxysilanes having an epoxy group disclosed in JP-A-60-196956. And a rubber-based pressure-sensitive adhesive and an acrylic pressure-sensitive adhesive containing a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt-based compound.

  When the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, a part of the pressure-sensitive adhesive layer 2 so that the pressure-sensitive adhesive force of the part 2a in the pressure-sensitive adhesive layer 2 <the pressure-sensitive adhesive force of the other part 2b. May be irradiated.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the radiation-curable pressure-sensitive adhesive layer 2 is formed on the support substrate 1, the portion 2a is partially irradiated with radiation to be cured. It is done. The partial radiation irradiation can be performed through a photomask in which a pattern corresponding to the portion 3b other than the workpiece pasting portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The radiation curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the support substrate 1. Partial radiation curing can also be performed on the radiation curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the case where the pressure-sensitive adhesive layer 2 is formed of a radiation curable pressure-sensitive adhesive, all or a part of at least one side of the support substrate 1 other than the part corresponding to the workpiece pasting part 3a is shielded from light. The portion 2a with reduced adhesive strength can be formed by irradiating with radiation after forming the radiation-curable pressure-sensitive adhesive layer 2 on the substrate and curing the portion corresponding to the workpiece pasting portion 3a. . As a light shielding material, what can become a photomask on a support film can be prepared by printing, vapor deposition, or the like. According to this manufacturing method, the die-bonding film 10 with a dicing tape of this invention can be manufactured efficiently.

  In the case where curing is inhibited by oxygen during irradiation, it is desirable to block oxygen (air) from the surface of the radiation curable pressure-sensitive adhesive layer 2 by some method. For example, a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, a method of irradiating ultraviolet rays or the like in a nitrogen gas atmosphere, and the like can be mentioned.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

<Manufacturing method of die bond film with dicing tape>
The die bond films 10 and 11 with a dicing tape according to the present embodiment can be prepared, for example, by separately preparing a dicing tape and a die bond film and finally bonding them together. Specifically, it can be produced according to the following procedure.

  First, the base material 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.

  Next, a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer is prepared. Resin, additive, etc. which were demonstrated by the term of the adhesive layer are mix | blended with the adhesive composition. After the prepared pressure-sensitive adhesive composition is applied onto the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 2. . It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 80 to 150 ° C. and the drying time is 0.5 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, the coating film may be dried on the said drying conditions, and the adhesive layer 2 may be formed. Then, the adhesive layer 2 is bonded together with the separator on the base material 1. Thereby, the dicing tape provided with the base material 1 and the adhesive layer 2 is produced. In addition, as a dicing tape, what is necessary is just to provide the base material and the adhesive layer at least, and when it has other elements, such as a separator, it is also called a dicing tape.

  The die bond films 3 and 3 ′ are produced, for example, as follows. First, an adhesive composition that is a material for forming the die bond films 3 and 3 ′ is prepared. In the adhesive composition, as described in the section of the die bond film, the thermoplastic resin (a), the thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec, various types Additives etc. are blended.

  Next, after applying the prepared adhesive composition on the base separator so as to have a predetermined thickness to form a coating film, the coating film is dried under predetermined conditions to form an adhesive layer. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating, etc. are mentioned. As drying conditions, for example, the drying temperature is 70 to 160 ° C. and the drying time is 1 to 5 minutes. Moreover, after apply | coating an adhesive composition on a separator and forming a coating film, you may dry an application film on the said drying conditions, and may form an adhesive bond layer. Then, an adhesive bond layer is bonded together with a separator on a base material separator. The present invention includes not only the case where the die bond film is formed of an adhesive layer alone, but also the case where it is formed of an adhesive layer and other elements such as a separator.

  Subsequently, the separator is peeled off from each of the die bond films 3 and 3 ′ and the dicing tape, and the both are bonded so that the adhesive layer and the pressure-sensitive adhesive layer become the bonding surfaces. Bonding can be performed by, for example, pressure bonding. At this time, the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C. Moreover, a linear pressure is not specifically limited, For example, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. Next, the base material separator on the adhesive layer is peeled off, and the die bond film with dicing tape according to the present embodiment is obtained.

<Method for Manufacturing Semiconductor Device>
Next, the manufacturing method of the semiconductor device using the die-bonding film 10 with a dicing tape concerning this Embodiment is demonstrated below.

  First, as shown in FIG. 1, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer bonding portion 3a of the adhesive layer 3 in the die bond film 10 with a dicing tape, and this is bonded and held (fixing step). ). This step is performed while pressing with a pressing means such as a pressure roll.

  Next, dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured (dicing step). Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Moreover, in this process, the cutting method called full cut etc. which cut | disconnect to the die-bonding film 10 with a dicing tape, for example can be employ | adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed by the die bond film 10 with the dicing tape, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  In order to peel off the semiconductor chip adhered and fixed to the die bond film 10 with the dicing tape, the semiconductor chip 5 is picked up (pickup process). The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip 5 from the die bond film 10 with a dicing tape with a needle and picking up the pushed-up semiconductor chip 5 with a pickup device may be mentioned.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the adhesive layer 3a of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

  Next, as shown in FIG. 3, the semiconductor chip 5 formed by dicing is die-bonded to the adherend 6 through the die-bonding film 3a (die-bonding step). Examples of the adherend 6 include a lead frame, a TAB film, a substrate, and a separately manufactured semiconductor chip. The adherend 6 may be, for example, a deformable adherend that can be easily deformed or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

  A conventionally well-known thing can be used as said board | substrate. As the lead frame, a metal lead frame such as a Cu lead frame or a 42 Alloy lead frame, or an organic substrate made of glass epoxy, BT (bismaleimide-triazine), polyimide, or the like can be used. However, the present invention is not limited to this, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

  Die bonding is performed by pressure bonding. The conditions for die bonding are not particularly limited, and can be set as necessary. Specifically, for example, it can be performed within a die bonding temperature of 80 to 160 ° C., a bonding pressure of 5 N to 15 N, and a bonding time of 1 to 10 seconds.

  Subsequently, the die-bonding film 3a is heat-treated to be thermally cured, and the semiconductor chip 5 and the adherend 6 are bonded. As the heat treatment conditions, the temperature is in the range of 80 to 180 ° C., and the heating time is 0.1 to 24 hours, preferably 0.1 to 4 hours, more preferably 0.1 to 1 hour. Preferably there is.

  Next, the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 are electrically connected by a bonding wire 7 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  In addition, you may perform a wire bonding process, without thermosetting the die-bonding film 3 by heat processing. In this case, the shear bond strength of the die bond film 3a at 25 ° C. is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, with respect to the adherend 6. Even if the wire bonding step is performed without thermosetting the die bond film 3a by setting the shear adhesive force to 0.2 MPa or more, the die bond film 3a and the semiconductor chip 5 are caused by ultrasonic vibration or heating in the step. Alternatively, shear deformation does not occur on the adhesion surface with the adherend 6. That is, the semiconductor element does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  Further, the uncured die bond film 3a is not completely thermally cured even if the wire bonding process is performed. Furthermore, the shear bond strength of the die bond film 3a needs to be 0.2 MPa or more even within the temperature range of 80 to 250 ° C. This is because if the shear adhesive force is less than 0.2 MPa within the temperature range, the semiconductor element moves due to ultrasonic vibration during wire bonding, and wire bonding cannot be performed, resulting in a decrease in yield.

  Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. As a result, the sealing resin is cured, and when the die bond film 3a is not thermally cured, the die bond film 3a is also thermally cured. That is, in the present invention, even when the post-curing process described later is not performed, the die-bonding film 3a can be thermally cured and bonded in this process, and the number of manufacturing processes is reduced. And it can contribute to shortening of the manufacturing period of a semiconductor device.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even in the case where the die bond film 3a is not thermally cured in the sealing process, the die bond film 3a is thermally cured together with the curing of the sealing resin 8 in this process, thereby allowing the adhesive fixing. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  Moreover, as shown in FIG. 4, the die bond film with a dicing tape of this invention can be used suitably also when laminating | stacking a some semiconductor chip and carrying out three-dimensional mounting. FIG. 4 is a schematic cross-sectional view showing an example in which a semiconductor chip is three-dimensionally mounted through a die bond film. In the case of the three-dimensional mounting shown in FIG. 4, first, at least one die bond film 3a cut out to have the same size as the semiconductor chip is pasted on the adherend 6, and then the semiconductor chip 5 is attached via the die bond film 3a. Then, die bonding is performed so that the wire bond surface is on the upper side. Next, the die bond film 13 is pasted while avoiding the electrode pad portion of the semiconductor chip 5. Further, another semiconductor chip 15 is die-bonded on the die-bonding film 13 so that the wire-bonding surface is on the upper side. Thereafter, the die bond films 3a and 13 are heated to be thermoset and bonded and fixed, thereby improving the heat resistance strength. As for the heating conditions, it is preferable that the temperature is in the range of 80 to 200 ° C. and the heating time is in the range of 0.1 to 24 hours, as described above.

  In the present invention, the die bond films 3a and 13 may be simply die bonded without being thermally cured. Thereafter, wire bonding is performed without passing through a heating step, and the semiconductor chip is further sealed with a sealing resin, and the sealing resin can be after-cured.

  Next, a wire bonding process is performed. Thereby, each electrode pad in the semiconductor chip 5 and the other semiconductor chip 15 and the adherend 6 are electrically connected by the bonding wire 7. In addition, this process is implemented without passing through the heating process of die-bonding films 3a and 13.

  Subsequently, a sealing process for sealing the semiconductor chip 5 and the like with the sealing resin 8 is performed, and the sealing resin is cured. At the same time, when the thermosetting is not performed, the adherend 6 and the semiconductor chip 5 are bonded and fixed by the thermosetting of the die bond film 3a. Further, the die-bonding film 13 is thermally cured to bond and fix between the semiconductor chip 5 and the other semiconductor chip 15. In addition, you may perform a postcure process after a sealing process.

  Even in the case of three-dimensional mounting of semiconductor chips, since the heat treatment by heating the die bond films 3a and 13 is not performed, the manufacturing process can be simplified and the yield can be improved. In addition, since the adherend 6 is not warped, and the semiconductor chip 5 and other semiconductor chips 15 are not cracked, the semiconductor element can be made thinner.

  Moreover, as shown in FIG. 5, it is good also as three-dimensional mounting which laminated | stacked the spacer via the die-bonding film between the semiconductor chips. FIG. 5 is a schematic cross-sectional view showing an example in which two semiconductor chips are three-dimensionally mounted with a die bond film via a spacer.

  In the case of the three-dimensional mounting shown in FIG. 5, first, the die bond film 3a, the semiconductor chip 5 and the die bond film 21 are sequentially laminated on the adherend 6 and die bonded. Furthermore, on the die bond film 21, the spacer 9, the die bond film 21, the die bond film 3a, and the semiconductor chip 5 are sequentially laminated and die bonded. Thereafter, the die bond films 3a and 21 are heated to be thermoset and bonded and fixed, thereby improving the heat resistance strength. As for the heating conditions, it is preferable that the temperature is in the range of 80 to 200 ° C. and the heating time is in the range of 0.1 to 24 hours, as described above.

  In the present invention, the die bond films 3a and 21 may be simply die bonded without being thermally cured. Thereafter, wire bonding is performed without passing through a heating step, and the semiconductor chip is further sealed with a sealing resin, and the sealing resin can be after-cured.

  Next, as shown in FIG. 5, a wire bonding process is performed. Thereby, the electrode pad in the semiconductor chip 5 and the adherend 6 are electrically connected by the bonding wire 7. In addition, this process is implemented without passing through the heating process of die-bonding films 3a and 21.

  Subsequently, a sealing step of sealing the semiconductor chip 5 with the sealing resin 8 is performed, and the sealing resin 8 is cured, and when the die bond films 3a and 21 are uncured, by thermosetting these, Adhesive fixing is performed between the adherend 6 and the semiconductor chip 5 and between the semiconductor chip 5 and the spacer 9. Thereby, a semiconductor package is obtained. The sealing process is preferably a batch sealing method in which only the semiconductor chip 5 side is sealed on one side. Sealing is performed to protect the semiconductor chip 5 attached on the pressure-sensitive adhesive sheet, and the typical method is molding in a mold using the sealing resin 8. In that case, it is common to perform a sealing process simultaneously using the metal mold | die which consists of an upper metal mold | die and a lower metal mold | die which have a some cavity. The heating temperature at the time of resin sealing is preferably in the range of 170 to 180 ° C, for example. A post-curing step may be performed after the sealing step.

  The spacer 9 is not particularly limited, and for example, a conventionally known silicon chip or polyimide film can be used. A core material can be used as the spacer. It does not specifically limit as a core material, A conventionally well-known thing can be used. Specifically, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a mirror silicon wafer, a silicon substrate or A glass adherend can be used.

(Other matters)
When a semiconductor element is three-dimensionally mounted on the adherend, a buffer coat film is formed on the surface side where the circuit of the semiconductor element is formed. Examples of the buffer coat film include those made of a heat resistant resin such as a silicon nitride film or a polyimide resin.

  Moreover, the die-bonding film used at each stage when the semiconductor element is three-dimensionally mounted is not limited to the one having the same composition, and can be appropriately changed according to the manufacturing conditions and applications.

  Moreover, the lamination | stacking method demonstrated in the said embodiment is a mere illustration, Comprising: It can change suitably as needed. For example, in the method for manufacturing a semiconductor device described with reference to FIG. 4, it is possible to stack the semiconductor elements in the third and subsequent stages by the stacking method described with reference to FIG.

  Further, in the above-described embodiment, the mode in which the wire bonding process is performed collectively after laminating a plurality of semiconductor elements on the adherend has been described, but the present invention is not limited to this. . For example, it is possible to perform a wire bonding process every time a semiconductor element is stacked on an adherend.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to them, but are merely illustrative examples, unless otherwise specified. The term “parts” means parts by weight.

<Production of dicing tape>
In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer and a stirrer, 82.1 parts of 2-ethylhexyl acrylate (hereinafter referred to as “2EHA”), 2-hydroxyethyl acrylate (hereinafter referred to as “HEA”). 13.2 parts, 0.2 parts of benzoyl peroxide and 67 parts of toluene were added and polymerized in a nitrogen stream at 60 ° C. for 6 hours to obtain an acrylic polymer A.

  To this acrylic polymer A, 11 parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as “MOI”) was added and subjected to an addition reaction for 48 hours at 50 ° C. in an air stream to obtain acrylic polymer A ′. It was.

  Next, with respect to 100 parts of acrylic polymer A ′, 8 parts of a polyisocyanate compound (trade name “Coronate L”, manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name “Irgacure 651”, Ciba Special) 5 parts) (manufactured by T Chemicals) was added to prepare an adhesive solution.

  The pressure-sensitive adhesive solution prepared above was applied on the surface of the PET release liner that had been subjected to the silicone treatment, and heat-crosslinked at 120 ° C. for 2 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 μm. Subsequently, a polyolefin film having a thickness of 100 μm was bonded to the surface of the pressure-sensitive adhesive layer. Then, after storing for 24 hours at 50 ° C., a dicing tape A was produced.

Example 1
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and MEH as a thermosetting resin (b), MEH -8000-4L), 70 parts of epoxy resin (manufactured by DIC, HP-4700), and 30 parts of spherical silica (manufactured by Admatechs Co., Ltd., SO-25R) are dissolved in methyl ethyl ketone to a concentration of 23.6. It adjusted so that it might become weight%. MEH-8000-4L manufactured by Meiwa Kasei Co., Ltd. is a thermosetting resin having an allyl group at the ortho position. That is, MEH-8000-4L corresponds to the case where the ratio of the number of allyl groups to the number of H (number of allyl groups) :( number of H) in R ¹ of the chemical formula (1) is 1: 3. The weight average molecular weight of MEH-8000-4L is 400.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film A was prepared.
This die bond film A was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film A with a dicing tape according to this example.

(Example 2)
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and MEH as a thermosetting resin (b), MEH -8015) 30 parts, 10 parts of epoxy resin (manufactured by DIC, HP-4700) and 150 parts of spherical silica (manufactured by Admatechs Co., Ltd., SO-25R) were dissolved in methyl ethyl ketone to obtain a concentration of 23.6% by weight. It adjusted so that it might become. MEH-8000H manufactured by Meiwa Kasei Co., Ltd. is a thermosetting resin having an allyl group at the ortho position. That is, MEH-8000H corresponds to the case where the ratio of the number of allyl groups to the number of H in R ¹ of chemical formula (1) (number of allyl groups) :( number of H) is 1: 3. The weight average molecular weight of MEH-8000H is 510.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film B was prepared.
This die bond film B was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film B with a dicing tape according to this example.

Example 3
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and MEH as a thermosetting resin (b), MEH -8000-4L) 1.5 parts was dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film C was prepared.
This die bond film C was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film C with a dicing tape according to this example.

Example 4
100 parts of a carboxyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-708-6) as the thermoplastic resin (a) and (Maywa Kasei Co., Ltd.) as the thermosetting resin (b) , MEH-8000-4L) and 1.5 parts of an epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film D was prepared.
This die bond film D was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film D with a dicing tape according to this example.

(Example 5)
100 parts of glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and 828XA (manufactured by Mitsubishi Chemical Corporation) as the thermosetting resin (b) ) 1.5 parts and 1.5 parts of epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight. Incidentally, 828XA manufactured by Mitsubishi Chemical Corporation is a bisphenol A type epoxy resin.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film E was prepared.
This die bond film E was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film E with a dicing tape according to this example.

(Comparative Example 1)
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and HF (manufactured by Meiwa Kasei Co., Ltd.) as the thermosetting resin (b) -1M) 1.5 parts was dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight. The HF-1M type manufactured by Meiwa Kasei Co., Ltd. is a general solid novolac type phenol resin.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film F was prepared.
This die bond film F was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film F with a dicing tape according to this comparative example.

(Comparative Example 2)
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and HF (manufactured by Meiwa Kasei Co., Ltd.) as the thermosetting resin (b) -1M) and 90 parts of an epoxy resin (manufactured by DIC, HP-4700) were dissolved in methyl ethyl ketone to adjust the concentration to 23.6% by weight.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film G was prepared. This die bond film G was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film G with a dicing tape according to this comparative example.

(Comparative Example 3)
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and MEH as a thermosetting resin (b), MEH -8000-4L) 1 part was dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film H was prepared.
The die bond film H was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film H with a dicing tape according to this comparative example.

(Comparative Example 4)
100 parts of a glycidyl group-containing acrylic copolymer (manufactured by Nagase ChemteX Corporation, SG-P3) as the thermoplastic resin (a), and MEH as a thermosetting resin (b), MEH -8000-4L) was dissolved in methyl ethyl ketone and adjusted to a concentration of 23.6% by weight.
The adhesive composition solution was applied onto a release film made of a polyethylene terephthalate film having a thickness of 50 μm and subjected to a silicone release treatment as a release liner, and then dried at 130 ° C. for 2 minutes to obtain a thickness of 25 μm. A die bond film I was prepared.
This die bond film I was transferred to the pressure-sensitive adhesive layer side of the dicing tape A described above to obtain a die bond film I with a dicing tape according to this comparative example.

(Measurement of viscosity of thermosetting resin (b) at 25 ° C.)
About the thermosetting resin (b) used in the examples and comparative examples, a viscometer (RE80U (manufactured by Toki Sangyo Co., Ltd.)) was used, and the rotor code No. 1 was measured. The measurement conditions were as follows. The results are shown in Tables 1 and 2.
Measurement time: 5 minutes Number of revolutions: Examples 1 to 4, Comparative Example 3 and Comparative Example 4 are 20 rpm
Example 5 is 4 rpm

(Measurement of elongation at break of die bond film at 5 ° C)
The die bond films created in the examples and comparative examples were formed into strips having a thickness of 200 μm and a width of 10 mm. Next, using a tensile tester (Tensilon, manufactured by Shimadzu Corporation), the tensile speed was 0.5 mm / min and the distance between chucks was 20 mm. The breaking elongation was calculated by the following formula. The results are shown in Tables 1 and 2.
Elongation at break (%) = (((length between chucks at break (mm)) − 20) / 20) × 100

(Measurement of storage modulus)
The die bond films created in the examples and comparative examples were heat cured at 170 ° C. for 1 hour. Thereafter, a strip shape having a thickness of 200 μm and a width of 10 mm was formed. Next, using a solid viscoelasticity measuring device (RSA (III), manufactured by Rheometric Scientific), the storage elastic modulus at −50 to 300 ° C. was set at a frequency of 1 Hz and a heating rate of 10 ° C./min. Measured with Tables 1 and 2 show the storage elastic moduli at 260 ° C. at that time.

(Void disappearance after sealing process 1)
The die-bonding films obtained in each Example and Comparative Example were attached to a 9.5 mm square mirror chip at 60 ° C. and bonded to a BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. This was further heat-treated at 130 ° C. for 2 hours in a dryer. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of The voids after the sealing step were observed using an ultrasonic imaging device (manufactured by Hitachi Finetech, FS200II). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). When the area occupied by the void is less than 10% with respect to the surface area of the die bond film, it is evaluated as “◯”, when it is 10% or more and less than 30%, “△”, and when it is 30% or more as “x” did. The results are shown in Tables 1 and 2.

(Void disappearance after sealing process 2)
The die-bonding films obtained in each Example and Comparative Example were attached to a 9.5 mm square mirror chip at 60 ° C. and bonded to a BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. This was further heat-treated at 170 ° C. for 1 hour in a dryer. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of The voids after the sealing step were observed using an ultrasonic imaging device (manufactured by Hitachi Finetech, FS200II). The area occupied by the voids in the observed image was calculated using binarization software (WinRoof ver. 5.6). When the area occupied by the void is less than 10% with respect to the surface area of the die bond film, it is evaluated as “◯”, when it is 10% or more and less than 30%, “△”, and when it is 30% or more as “x” did. The results are shown in Tables 1 and 2.

(Moisture-resistant solder reflow test 1)
The die-bonding films obtained in each Example and Comparative Example were attached to a 9.5 mm square mirror chip at 60 ° C. and bonded to a BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. This was further heat-treated at 130 ° C. for 2 hours in a dryer. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of After that, heat curing at 175 ° C. × 5 h is performed, moisture absorption operation is performed under the conditions of a temperature of 30 ° C., a humidity of 60% RH, and a time of 72 h, and an IR reflow furnace set to maintain a temperature of 260 ° C. or higher for 10 seconds. Passed the sample. With respect to the nine mirror chips, whether or not peeling occurred at the interface between the die bond film and the substrate was observed with an ultrasonic microscope, and the ratio at which peeling occurred was calculated. The results are shown in Tables 1 and 2.

(Moisture resistant solder reflow test 2)
The die-bonding films obtained in each Example and Comparative Example were attached to a 9.5 mm square mirror chip at 60 ° C. and bonded to a BGA substrate under the conditions of a temperature of 120 ° C., a pressure of 0.1 MPa, and a time of 1 s. This was further heat-treated at 170 ° C. for 1 hour in a dryer. Next, using a molding machine (manufactured by TOWA Press, manual press Y-1), a molding temperature of 175 ° C., a clamp pressure of 184 kN, a transfer pressure of 5 kN, a time of 120 seconds, a sealing resin GE-100 (manufactured by Nitto Denko Corporation) The sealing step was performed under the conditions of Thereafter, thermosetting at 175 ° C. × 5 h is performed, moisture absorption operation is performed under conditions of a temperature of 30 ° C., a humidity of 60% RH, and a time of 72 h, and an IR reflow furnace set to maintain a temperature of 260 ° C. or higher for 10 seconds. Passed the sample. With respect to the nine mirror chips, whether or not peeling occurred at the interface between the die bond film and the substrate was observed with an ultrasonic microscope, and the ratio at which peeling occurred was calculated.

(Pickup property)
Using the die bond film with dicing tape of each Example and Comparative Example, picking was performed after actually dicing the semiconductor wafer in the following manner, and the performance of each die bond film with dicing tape was evaluated.

  A semiconductor wafer (diameter 8 inches, thickness 0.6 mm) was polished on the back surface, and a mirror wafer having a thickness of 0.075 mm was used as a workpiece. The conditions for the back surface polishing treatment were as shown in the following <Wafer grinding conditions>. After the separator was peeled from the die bond film with the dicing tape, the mirror wafer was roll-bonded onto the die bond film at 40 ° C. and bonded, and further dicing was performed. The conditions for roll pressure bonding were as shown in the following <bonding conditions>. The dicing was fully cut so as to obtain a 10 mm square chip size. The dicing conditions were as follows <Dicing conditions>.

  Next, the die bonding film with each dicing tape was irradiated with ultraviolet rays and stretched to perform an expanding process in which each chip was set at a predetermined interval. The conditions of ultraviolet irradiation were as follows <ultraviolet irradiation conditions>. Further, the semiconductor chip was picked up from the base material side of each dicing tape-attached die bond film by a needle, and the pick-up property was evaluated. The pickup conditions were as follows <Pickup conditions>. In the evaluation, 100 semiconductor chips were picked up continuously, the success rate was 100%, and the case of less than 100% was evaluated as x. The results are shown in Tables 1 and 2.

<Wafer grinding conditions>
Grinding device: DFG-8560 manufactured by DISCO
Semiconductor wafer: 8 inch diameter (back grinding from 0.6mm to 0.075mm thickness)

<Bonding conditions>
Pasting device: Nitto Seiki, MA-3000II
Pasting speed meter: 10mm / min
Pasting pressure: 0.15 MPa
Stage temperature at the time of pasting: 40 ° C

<Dicing conditions>
Dicing machine: DFD-6361, manufactured by Disco Corporation
Dicing ring: 2-8-1 (manufactured by Disco)
Dicing speed: 80mm / sec
Dicing blade:
Z1; 2050HEDD made by Disco Corporation
Z2: Disco 2050HEBB
Dicing blade rotation speed:
Z1; 40,000 rpm
Z2; 40,000 rpm
Blade height:
Z1; 0.170 mm (depending on the thickness of the semiconductor wafer (when the wafer thickness is 75 μm, 0
170mm))
Z2; 0.085mm
Cut method: A mode / step cut Wafer chip size: 10.0mm square

<Ultraviolet irradiation conditions>
Ultraviolet (UV) irradiation device: Nitto Seiki (trade name, manufactured by UM-810)
UV irradiation integrated light quantity: 300 mJ / cm ²
In addition, ultraviolet irradiation was performed from the polyolefin film side.

<Pickup conditions>
SPA-300 manufactured by SHINKAWA
Pickup height 350um
9 pins

(Refrigeration evaluation)
Using each die bond film of each example and comparative example, refrigeration evaluation was performed in the following manner. The die-bonded film cut to 20 cm square was placed on an aluminum plate in a refrigerator at 5 ° C. and left for 1 hour, and then the film was folded in half. At that time, it was confirmed whether or not the film was cracked or chipped, and the evaluation was evaluated as “◯” when there was no crack or chipping, and “X” when there was any crack. Tables 1 and 2 show.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 ', 13, 21 Die-bonding film 4 Semiconductor wafer 5 Semiconductor chip 6 Adhering body 7 Bonding wire 8 Sealing resin 9 Spacer 10, 11 Die-bonding film with dicing tape 15 Semiconductor chip

Claims (6)

A dicing tape with a dicing tape having a dicing tape having a pressure-sensitive adhesive layer laminated on a substrate and a die-bonding film laminated on the pressure-sensitive adhesive layer,
The die bond film contains a thermoplastic resin (a) and a thermosetting resin (b) having a viscosity at 25 ° C. of 0.1 to 50 Pa · sec,
The thermosetting resin (b) is one or more selected from the group consisting of an epoxy resin and a phenol resin,
The content of the thermosetting resin (b) with respect to all resin components is 1% by weight or more and 50% by weight or less,
A die-bonding film with a dicing tape, wherein the die-bonding film has a storage elastic modulus at 260 ° C of 0.05 MPa or more after being heat-cured at 170 ° C for 1 hour.   The die-bonding film with a dicing tape according to claim 1, wherein the thermoplastic resin (a) is a functional group-containing acrylic copolymer. The said thermosetting resin (b) is a thermosetting resin represented by following Chemical formula (1), The die-bonding film with a dicing sheet of Claim 1 or 2 characterized by the above-mentioned.

(In the formula, n is an integer of 0 to 10, R ¹ independently represents an allyl group or H, at least one is an allyl group, and m is an integer of 1 to 3).   The die bond film with a dicing tape according to any one of claims 1 to 3, wherein the elongation at break of the die bond film at 5 ° C is 10% or more.   The die-bonding film with a dicing tape according to any one of claims 1 to 4, wherein the pressure-sensitive adhesive layer contains an acrylic polymer containing 2-ethylhexyl acrylate as a structural unit. A bonding step of bonding the die bond film of the die bond film with a dicing tape according to any one of claims 1 to 5 and the back surface of the semiconductor wafer;
Dicing the semiconductor wafer together with the die-bonding film with the dicing tape to form a chip-shaped semiconductor element;
Pickup process for picking up the semiconductor element together with the die bond film from the die bond film with the dicing tape,
A die-bonding step of die-bonding the semiconductor element on an adherend through the die-bonding film;
A wire bonding step of wire bonding to the semiconductor element;
And a step of sealing the semiconductor element.

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