JP2011023607A - Exoergic die-bonding film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a die-bonding film high in heat conductivity and excelling in heat radiation capability, and a dicing/die-bonding film including the die-bonding film. <P>SOLUTION: This exoergic die-bonding film for sticking and fixing a semiconductor element on a sticking object includes at least: a thermoplastic resin; a thermosetting resin; and a thermally-conductive filler having a heat conductivity ≥12 W/m K, wherein the content of the thermally-conductive filler is 50-120 wt.% with respect to the total of an organic resin constituent and the thermally-conductive filler. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a heat dissipating die bond film and a dicing die bond film including the heat dissipating die bond film, and more particularly, to a heat dissipating die bond film used when die bonding a semiconductor chip or the like on an adherend such as a substrate or a lead frame. It is related with the dicing die-bonding film provided with.

  The semiconductor wafer on which the circuit pattern is formed is diced into chip-shaped semiconductor elements after adjusting the thickness by backside polishing as necessary. Next, the semiconductor element is fixed to an adherend such as a lead frame with an adhesive (die bonding process), and then transferred to a bonding process. In the mounting step, an adhesive is applied to the lead frame and the semiconductor element. However, with this method, it is difficult to make the adhesive layer uniform, and a special device and a long time are required for applying the adhesive. For this reason, a dicing die-bonding film has been proposed in which a semiconductor wafer is bonded and held in a dicing process, and an adhesive layer for chip fixation necessary for a mounting process is also provided (see, for example, Patent Document 1).

  The dicing die-bonding film is formed by peeling an adhesive layer on a substrate. That is, after dicing the semiconductor wafer while being held by the adhesive layer, the support substrate is stretched to peel the semiconductor chip together with the adhesive layer, and this is individually collected and the lead frame etc. via the adhesive layer It is made to adhere to the adherend.

  On the other hand, in recent years, as semiconductor elements are highly integrated, multi-staged, highly functional, and their dimensions are increased, heat generated during operation of the semiconductor elements tends to increase. For this reason, when the heat is stored inside the semiconductor device and exceeds the junction temperature of the semiconductor element, there is a problem that a malfunction occurs. For this reason, improvement in heat dissipation is a problem.

  In response to this problem, for example, Patent Document 2 below proposes a method in which a metal foil is stacked on a die pad to which a semiconductor element is fixed, and heat is radiated by the metal foil. However, in the present invention, the unbalance of the constituent materials in the thickness direction of the semiconductor device, that is, the linear expansion coefficient of the metal foil is generally larger than that of the semiconductor element or die pad. There is a problem that stress is repeatedly generated in the foil, which causes peeling and cracking of the metal foil.

JP 60-57342 A JP-A-5-198701

  This invention is made | formed in view of the said subject conventionally, and it aims at providing the dicing die-bonding film provided with the die-bonding film excellent in high heat conductivity and heat dissipation, and the said die-bonding film.

  In order to solve the conventional problems, the inventors of the present application have studied a heat-dissipating die-bonding film and a dicing die-bonding film provided with the heat-dissipating die-bonding film. As a result, it was found that a die-bonding film excellent in heat dissipation can be obtained by including a thermally conductive filler in the adhesive layer, and the present invention has been completed.

  That is, the heat-dissipating die-bonding film according to the present invention is a heat-dissipating die-bonding film that adheres and fixes a semiconductor element on an adherend in order to solve the above-described problems, and includes a thermoplastic resin and a thermosetting resin. , And at least a thermally conductive filler having a thermal conductivity of 12 W / m · K or more, and the content of the thermally conductive filler is 50% by weight to 120% by weight with respect to the total of the organic resin component and the thermally conductive filler. It is within the range.

  The heat-dissipating die-bonding film of the present invention (hereinafter sometimes referred to as “die-bonding film”) has a thermal conductivity of 12 W / m · K or more as a total of 50 organic conductive components and thermal conductive fillers. Since it is contained by weight% or more, heat can be dissipated without accumulating heat. Thereby, for example, when the semiconductor element generates heat during its operation, the heat is conducted to the die-bonding film of the present invention, but can be dissipated to the adherend side without being accumulated in the film. . As a result, it is possible to prevent the semiconductor element from being deteriorated by heat. Note that the content of the heat conductive filler is 120% by weight or less based on the total of the organic resin component and the heat conductive filler because the wettability and adhesion of the die bond film to the semiconductor element and the adherend are reduced. This is to prevent it. Further, if the thermal conductivity of the thermally conductive filler is less than 12 W / m · K, the thermal conductivity of the die bond film may be reduced, and heat accumulation may occur.

尚、式中の熱拡散率は温度波熱分析法（ＴＷＡ法）により測定可能であり、比熱はＪＩＳ Ｋ ７１２３の比熱容量測定法により測定可能であり、密度はアルキメデス法により測定可能である。 Here, the “adherent” includes various substrates such as a BGA (Ball Grid Array) substrate and a BT (Bismaleimide / Triazine) substrate, a lead frame, other semiconductor elements, spacers, and the like. Further, “thermal conductivity” is a value indicating the degree of thermal conductivity of a substance, and is a value calculated by the following formula.

The thermal diffusivity in the formula can be measured by a temperature wave thermal analysis method (TWA method), the specific heat can be measured by a specific heat capacity measurement method of JIS K 7123, and the density can be measured by an Archimedes method.

  In the above configuration, the average particle diameter of the thermally conductive filler is preferably in the range of 0.01 to 10 μm. By making the average particle size 0.01 μm or more, the thermal conductivity and heat resistance of the die bond film can be improved. On the other hand, by making the average particle size 10 μm or less, it is possible to prevent the thermal conductivity of the die bond film from being excessively lowered and to improve the wettability to the adherend and the semiconductor element, thereby reducing the adhesiveness. Can be suppressed. In addition, the average particle diameter of a filler is the value calculated | required with the photometric type particle size distribution meter (The product made from HORIBA, apparatus name; LA-910).

  In the above configuration, the thermally conductive filler is at least one selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, magnesium hydroxide, aluminum nitride, and silicon carbide. Is preferred.

  In the above configuration, the thermally conductive filler includes two kinds of thermally conductive fillers having different average particle sizes, and one thermally conductive filler has an average particle size in the range of 0.01 to 1 μm. The other thermally conductive filler preferably has an average particle size in the range of 1 to 10 μm. By using a filler having an average particle size of 0.01 to 1 μm and a filler having an average particle size of 1 to 10 μm as the thermally conductive filler, filling the thermally conductive filler in the die bond film The rate can be improved. Thereby, it is possible to impart excellent thermal conductivity to the die bond film.

  Moreover, in the said structure, it is preferable that the storage elastic modulus in 260 degreeC after heat-processing and heat-curing at 175 degreeC for 1 hour is 0.1 Mpa or more. Thereby, for example, a highly reliable semiconductor device can be manufactured even in a moisture-resistant solder reflow test or the like.

  Furthermore, in the above-mentioned constitution, it is preferable that the weight loss amount at 260 ° C. after heat treatment at 175 ° C. for 1 hour and thermosetting is 1% by weight or less. By making the weight reduction amount 1% by weight or less, for example, it is possible to prevent cracks from occurring in the package in the reflow process.

  The dicing die-bonding film according to the present invention has a structure in which the heat-dissipating die-bonding film described above is laminated on the dicing film.

The present invention has the following effects by the means described above.
That is, according to the present invention, since the heat conductive filler having a thermal conductivity of 12 W / m · K or more is contained in an amount of 50% by weight or more based on the organic resin component, the heat can be dissipated without accumulating heat. Therefore, for example, when the semiconductor element generates heat during its operation, the heat is conducted to the heat dissipating die-bonding film of the present invention, and is further radiated to the adherend side without being accumulated in the film. As a result, it is possible to prevent the reliability of the semiconductor element and the semiconductor device including the semiconductor element from being deteriorated by heat.

It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the dicing die-bonding film which concerns on other embodiment of this invention. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip via the die-bonding film which concerns on one Embodiment of this invention. It is a cross-sectional schematic diagram which shows the example which mounted the semiconductor chip three-dimensionally through the said die-bonding film. It is a cross-sectional schematic diagram which shows the example which mounted two-dimensionally the semiconductor chip through the spacer using the said die-bonding film.

(Heat-dissipating die-bonding film)
A heat dissipating die-bonding film (hereinafter referred to as “die-bonding film”) according to the present embodiment will be described below with reference to an example in which the film is laminated on a dicing film as shown in FIG.

  The die bond film 3 is an adhesive film used when a semiconductor element is bonded and fixed on an adherend, and includes at least a thermoplastic resin, a thermosetting resin, and a thermally conductive filler. The fixing includes the case where the die-bonding film 3 is bonded without being completely cured.

  The thermal conductive filler has a thermal conductivity of 12 W / m · K or more, preferably 15 to 70 W / m · K, more preferably 25 to 70 W / m · K. When the thermal conductivity is 12 W / m · K or higher, the die bond film 3 can be imparted with a thermal conductivity of at least 1.5 W / m · K or higher. However, if the thermal conductivity of the thermally conductive filler exceeds 70 W / m · K, the cost may increase.

  The heat conductive filler is not particularly limited, and examples thereof include electrically insulating materials such as aluminum oxide, zinc oxide, magnesium oxide, boron nitride, magnesium hydroxide, aluminum nitride, and silicon carbide. These can be used alone or in combination of two or more. Among these, aluminum oxide has high conductivity, is excellent in dispersibility in the die bond film 3, and is preferable from the viewpoint of availability.

  Content of the said heat conductive filler is in the range of 50 to 120 weight% with respect to the sum total of an organic resin component and a heat conductive filler, Preferably it exists in the range of 50 to 95 weight%. When the content is less than 50% by weight, the thermal conductivity of the die-bonding film 3 is lowered, and heat is accumulated in a semiconductor element or the like. On the other hand, when the content exceeds 120% by weight, the content of the adhesive component in the die bond film 3 is relatively reduced, and as a result, the wettability and adhesion of the die bond film 3 to the semiconductor element and the adherend are lowered. .

  The average particle size of the thermally conductive filler is preferably in the range of 0.01 to 10 μm, and more preferably in the range of 0.1 to 10 μm. When the average particle size is 0.01 μm or more, an excessive decrease in the thermal conductivity of the die bond film 3 can be suppressed, and heat dissipation and heat resistance can be improved. On the other hand, when the average particle size is 10 μm or less, the wettability with respect to the adherend and the semiconductor element can be improved, and the deterioration of the adhesiveness can be suppressed. The average particle diameter is, for example, a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).

  Furthermore, as the heat conductive filler, two kinds of fillers having different average particle diameters may be used. In this case, the average particle size is such that one heat conductive filler is 0.01 to 1 μm, preferably 0.05 to 1 μm, and the other heat conductive filler is 1 to 10 μm, preferably 2 to 10 μm. Set to By using thermally conductive fillers having an average particle size in the above numerical range and different from each other, the filling rate of the thermally conductive filler in the die bond film 3 can be improved. Thereby, it is possible to impart excellent heat dissipation to the die bond film 3. Moreover, when using two types of thermally conductive fillers having different average particle diameters, a thermally conductive filler having an average particle diameter of 0.01 to 1 μm and a thermally conductive filler having an average particle diameter of 1 to 10 μm The blend ratio is preferably in the range of 1: 9 to 7: 3 by weight, and more preferably in the range of 2: 8 to 6: 4.

  The particle shape of the heat conductive filler is not particularly limited, and examples thereof include a spherical shape, a needle shape, a fiber shape, a flake shape, a spike shape, and a coil shape. Among these shapes, the spherical shape is preferable in that the dispersibility and filling rate of the heat conductive filler in the film can be improved. In the present invention, thermally conductive fillers having different particle shapes may be contained in the film.

  Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include a plastic polyimide resin, a saturated polyester resin such as PET and PBT, a polyamideimide resin, and a fluororesin. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.

  The acrylic resin is not particularly limited, and includes one or two or more esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. Examples include polymers as components. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, an amyl group, an isoamyl group, a hexyl group, a heptyl group, a cyclohexyl group, and 2-ethylhexyl. Group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, or dodecyl group.

  In addition, the other monomer forming the polymer is not particularly limited, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4- (meth) acrylic acid 4- Hydroxybutyl, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) -Methyla Hydroxyl group-containing monomers such as relate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate or (meth) Examples thereof include sulfonic acid group-containing monomers such as acryloyloxynaphthalene sulfonic acid, and phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

  Examples of the thermosetting resin include phenol resin, amino resin, unsaturated polyester resin, epoxy resin, polyurethane resin, silicone resin, and thermosetting polyimide resin. These resins can be used alone or in combination of two or more. In particular, an epoxy resin containing a small amount of ionic impurities or the like that corrode semiconductor elements is preferable. Moreover, as a hardening | curing agent of an epoxy resin, a phenol resin is preferable.

  The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol Bifunctional epoxy resin such as AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, etc., or hydantoin type, tris Epoxy resins such as glycidyl isocyanurate type or glycidyl amine type are used. These can be used alone or in combination of two or more. Of these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because this epoxy resin is rich in reactivity with a phenol resin as a curing agent and is excellent in heat resistance and the like.

  Further, the phenol resin acts as a curing agent for the epoxy resin, for example, a novolac type phenol resin such as a phenol novolac resin, a phenol aralkyl resin, a cresol novolac resin, a tert-butylphenol novolac resin, a nonylphenol novolac resin, Examples include resol-type phenolic resins and polyoxystyrenes such as polyparaoxystyrene. These can be used alone or in combination of two or more. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

  The mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.

  In the present invention, the die bond film 3 containing an epoxy resin, a phenol resin and an acrylic resin is particularly preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured. In this case, the mixing ratio of the epoxy resin and the phenol resin is 10 to 200 parts by weight with respect to 100 parts by weight of the acrylic resin component.

  When the die-bonding film 3 of the present invention is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer is preferably added as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.

  A conventionally well-known thing can be employ | adopted as said crosslinking agent. In particular, polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, adducts of polyhydric alcohol and diisocyanate are more preferable. The addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.

  In addition, the die bond film 3 can mix | blend another additive suitably as needed. Examples of other additives include flame retardants, silane coupling agents, ion trapping agents, and the like.

  Examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.

  Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.

  Examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.

  Although the film thickness (total thickness in the case of a laminated body) of the die bond film 3 is not particularly limited, considering that the average particle diameter of the thermally conductive filler contained in the film is in the range of 0.01 to 10 μm. The range of 10 to 200 μm is preferable, and the range of 10 to 100 μm is more preferable. When the film thickness is less than 10 μm, the heat conductive filler may be exposed from the film surface of the die bond film 3, the surface irregularities may be increased, and the adhesiveness of the die bond film 3 may be lowered. On the other hand, if the film thickness exceeds 200 μm, the thermal conductivity of the film may decrease.

  The thermal conductivity of the die bond film 3 is preferably 1.5 W / m · K or more, and more preferably 2 W / m · K or more. By making the thermal conductivity of the die bond film 3 itself 2 W / m · K or more, for example, the heat generated during the operation of the semiconductor element can be effectively radiated to the adherend side, and the heat in the semiconductor device can be radiated. Accumulation can be reduced. In addition, from the viewpoint of self-supporting property of the die bond film 3, the thermal conductivity of the die bond film 3 is preferably 5 W / m · K or less.

  Moreover, it is preferable that the storage elastic modulus in 250 degreeC after the thermosetting of the said die-bonding film 3 is 0.1 MPa or more, and 0.3 MPa or more is more preferable. By setting the storage elastic modulus to 0.1 MPa or more, a highly reliable semiconductor device can be manufactured even in a moisture-resistant solder reflow test or the like.

  Further, the die bond film 3 is heat-cured at 175 ° C. for 1 hour to be thermally cured, and the weight loss measured at 260 ° C. is preferably 1% by weight or less. Thereby, for example, it is possible to prevent the package from cracking in the reflow process. The amount of weight reduction can be adjusted, for example, by adjusting the amount of heat conductive filler added.

  In addition, the die-bonding film 3 can be made into the structure which consists only of a single layer of an adhesive bond layer, as shown in FIG. Alternatively, a thermoplastic resin having a different glass transition temperature and a thermosetting resin having a different thermosetting temperature may be appropriately combined to form a multilayer structure having two or more layers. Furthermore, since cutting water is used in the dicing process of the semiconductor wafer, the die bond film may absorb moisture, resulting in a moisture content higher than that in the normal state. When bonded to a substrate or the like with such a high water content, water vapor may accumulate at the bonding interface at the stage of after-curing and float may occur. Therefore, the die bond film has a structure in which a core material having high moisture permeability is sandwiched between adhesive layers, so that water vapor diffuses through the film at the after-curing stage, and this problem can be avoided. . From this viewpoint, the die bond film may have a multilayer structure in which an adhesive layer is formed on one side or both sides of the core material.

  Examples of the core material include films (for example, polyimide films, polyester films, polyethylene terephthalate films, polyethylene naphthalate films, polycarbonate films), resin substrates reinforced with glass fibers and plastic non-woven fibers, mirror silicon wafers, silicon substrates Or a glass substrate etc. are mentioned.

  The die bond film 3 is preferably protected by a separator (not shown). The separator has a function as a protective material for protecting the die bond film until it is put into practical use. Moreover, a separator can further be used as a support base material at the time of transferring the die-bonding film 3 to a dicing film. The separator is peeled off when the workpiece is stuck on the die bond film. As the separator, a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.

  As said dicing film, what laminated | stacked the adhesive layer 2 on the base material 1 is mentioned, for example. The die bond film 3 is laminated on the pressure-sensitive adhesive layer 2. Moreover, as shown in FIG. 2, the structure which formed the die-bonding film 3 'only in the semiconductor wafer affixing part may be sufficient.

  Examples of the substrate 1 include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, and polymethyl. Polyolefin such as pentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer , Ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, etc. polyester, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamid , Polyphenyl sulphates id, aramid (paper), glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), include those made of paper or the like. When the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the substrate 1 is preferably one that is permeable to ultraviolet rays.

  The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

  The pressure-sensitive adhesive layer 2 includes an ultraviolet curable pressure-sensitive adhesive. The UV curable pressure-sensitive adhesive can easily reduce its adhesive strength by increasing the degree of crosslinking by irradiation of ultraviolet light, and only the portion 2a corresponding to the semiconductor wafer attachment portion of the pressure-sensitive adhesive layer 2 shown in FIG. By irradiating with ultraviolet rays, a difference in adhesive strength with the other portion 2b can be provided.

  Further, by curing the ultraviolet curable pressure-sensitive adhesive layer 2 in accordance with the die-bonding film 3 ′ shown in FIG. 2, the portion 2 a having a significantly reduced adhesive force can be easily formed. Since the die bond film 3 ′ is attached to the portion 2 a that has been cured and has reduced adhesive strength, the interface between the portion 2 a and the die bond film 3 ′ of the pressure-sensitive adhesive layer 2 has a property of being easily peeled off during pick-up. On the other hand, the portion not irradiated with ultraviolet rays has a sufficient adhesive force, and forms the portion 2b.

  As described above, in the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10 shown in FIG. 1, the portion 2b formed of the uncured ultraviolet-curing pressure-sensitive adhesive adheres to the die-bonding film 3 and is used when dicing. A holding force can be secured. Thus, the ultraviolet curable pressure-sensitive adhesive can support the die bond film 3 for fixing the semiconductor chip to an adherend such as a substrate with a good balance of adhesion and peeling. In the pressure-sensitive adhesive layer 2 of the dicing die bond film 11 shown in FIG. 2, the portion 2 b can fix the wafer ring 16. The adherend 6 is not particularly limited, and examples thereof include various substrates such as a BGA substrate, a lead frame, a semiconductor element, and a spacer.

  As the ultraviolet curable pressure-sensitive adhesive, those having an ultraviolet curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation. Examples of the ultraviolet curable pressure-sensitive adhesive include an additive-type ultraviolet curable pressure-sensitive adhesive in which an ultraviolet curable monomer component or an oligomer component is blended with a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive. Can be illustrated.

  The pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability with an organic solvent such as ultrapure water or alcohol for electronic components that are difficult to contaminate semiconductor wafers and glass. Is preferred.

  Examples of the acrylic polymer include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl groups having 1 to 30 carbon atoms, especially 4 to 18 carbon linear or branched alkyl esters, etc.) and Meth) acrylic acid cycloalkyl esters (e.g., cyclopentyl ester, acrylic polymers such as one or more was used as a monomer component of the cyclohexyl ester etc.). In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) of the present invention has the same meaning.

  The acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. You may go out. Examples of such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidepropanesulfonic acid, sulfopropyl (meth) acrylate, (meth) acryloyloxynaphthalenesulfonic acid Monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate; acrylamide, acrylonitrile and the like. One or more of these copolymerizable monomer components can be used. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total monomer components.

  Furthermore, since the acrylic polymer is crosslinked, a polyfunctional monomer or the like can be included as a monomer component for copolymerization, if necessary. Examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components from the viewpoint of adhesive properties and the like.

  The acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization. The polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, the content of the low molecular weight substance is preferably small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3,000,000.

  In addition, an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them. When using an external cross-linking agent, the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive. Generally, it is preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight with respect to 100 parts by weight of the base polymer. Furthermore, you may use additives, such as conventionally well-known various tackifier and anti-aging agent, other than the said component as needed to an adhesive.

  Examples of the ultraviolet curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and penta. Examples include erythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. Examples of the ultraviolet curable oligomer component include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a molecular weight in the range of about 100 to 30000 are suitable. The blending amount of the ultraviolet curable monomer component and oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

  In addition to the additive-type UV-curable pressure-sensitive adhesive described above, the UV-curable pressure-sensitive adhesive has a carbon-carbon double bond in the polymer side chain, main chain, or main chain terminal as a base polymer. Intrinsic ultraviolet curable pressure sensitive adhesives using Intrinsic UV curable pressure-sensitive adhesive does not need to contain an oligomer component or the like, which is a low molecular weight component, or does not contain much, so that the oligomer component or the like does not move through the pressure-sensitive adhesive over time and is stable. It is preferable because an adhesive layer having a layer structure can be formed.

  As the base polymer having a carbon-carbon double bond, those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As such a base polymer, those having an acrylic polymer as a basic skeleton are preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

  The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy in molecular design to introduce a carbon-carbon double bond into a polymer side chain. . For example, after a monomer having a functional group is previously copolymerized with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into an ultraviolet curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.

  Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction. Moreover, the functional group may be on either side of the acrylic polymer and the compound as long as the acrylic polymer having the carbon-carbon double bond is generated by a combination of these functional groups. In the preferable combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α, α-dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.

  As the intrinsic ultraviolet curable pressure-sensitive adhesive, the base polymer (particularly acrylic polymer) having the carbon-carbon double bond can be used alone, but the ultraviolet curable monomer does not deteriorate the characteristics. Components and oligomer components can also be blended. The UV-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight with respect to 100 parts by weight of the base polymer.

  The ultraviolet curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α′-dimethylacetophenone, 2-methyl-2-hydroxypropio Α-ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) Acetophenone compounds such as -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthalenesulfonyl chloride Aromatic sulfonyl chloride compounds such as 1; photoactive oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3,3′-dimethyl Benzophenone compounds such as -4-methoxybenzophenone; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2 Thioxanthone compounds such as 1,4-diethylthioxanthone and 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; acyl phosphinoxide; acyl phosphonate. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

  Examples of the ultraviolet curable pressure-sensitive adhesive include, for example, an addition polymerizable compound having two or more unsaturated bonds, a photopolymerizable compound such as an alkoxysilane having an epoxy group, a carbonyl compound, an organic sulfur compound, a peroxide, an amine. And rubber-based pressure-sensitive adhesives and acrylic pressure-sensitive adhesives containing a photopolymerization initiator such as an onium salt-based compound.

  Examples of the method for forming the portion 2a on the pressure-sensitive adhesive layer 2 include a method in which after the ultraviolet curable pressure-sensitive adhesive layer 2 is formed on the substrate 1, the portion 2a is partially irradiated with ultraviolet rays to be cured. . The partial ultraviolet irradiation can be performed through a photomask on which a pattern corresponding to the portion 3b other than the semiconductor wafer bonding portion 3a is formed. Moreover, the method etc. of irradiating and hardening | curing an ultraviolet-ray spotly are mentioned. The ultraviolet curable pressure-sensitive adhesive layer 2 can be formed by transferring what is provided on the separator onto the substrate 1. Partial UV curing can also be performed on the UV curable pressure-sensitive adhesive layer 2 provided on the separator.

  In the pressure-sensitive adhesive layer 2 of the dicing die-bonding film 10, a part of the pressure-sensitive adhesive layer 2 may be irradiated with ultraviolet rays so that the adhesive strength of the portion 2a <the adhesive strength of the other portion 2b. That is, after forming the ultraviolet-curing pressure-sensitive adhesive layer 2 on the substrate 1, at least one side of the substrate 1 is shielded from all or part of the portion other than the portion corresponding to the semiconductor wafer pasting portion 3 a. By irradiating with ultraviolet rays, the portion corresponding to the semiconductor wafer pasting portion 3a can be cured to form the portion 2a with reduced adhesive strength. As the light shielding material, a material that can be a photomask on a support film can be produced by printing or vapor deposition. Thereby, the dicing die-bonding film 10 of this invention can be manufactured efficiently.

  In the case where curing inhibition by oxygen occurs during ultraviolet irradiation, it is desirable to block oxygen (air) from the surface of the ultraviolet curable pressure-sensitive adhesive layer 2. Examples of the method include a method of coating the surface of the pressure-sensitive adhesive layer 2 with a separator, and a method of irradiating ultraviolet rays such as ultraviolet rays in a nitrogen gas atmosphere.

  The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, but is preferably about 1 to 50 μm from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the adhesive layer. Preferably it is 2-30 micrometers, Furthermore, 5-25 micrometers is preferable.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device using the dicing die bond film 10 according to the present embodiment will be described below.

  First, as shown in FIG. 1, the semiconductor wafer 4 is pressure-bonded onto the semiconductor wafer attachment portion 3a of the die-bonding film 3 in the dicing die-bonding film 10, and this is adhered and held and fixed (mounting process). This step is performed while pressing with a pressing means such as a pressure roll.

  Next, dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is cut into a predetermined size and separated into individual pieces, and the semiconductor chip 5 is manufactured. Dicing is performed according to a conventional method from the circuit surface side of the semiconductor wafer 4, for example. Further, in this step, for example, a cutting method called full cut in which cutting is performed up to the dicing die bond film 10 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used. Further, since the semiconductor wafer is bonded and fixed by the dicing die-bonding film 10, chip chipping and chip jumping can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

  In order to peel off the semiconductor chip adhered and fixed to the dicing die bond film 10, the semiconductor chip 5 is picked up. The pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up the individual semiconductor chips 5 from the dicing die bond film 10 side with a needle and picking up the pushed-up semiconductor chips 5 with a pickup device may be mentioned.

  Here, when the pressure-sensitive adhesive layer 2 is an ultraviolet curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the semiconductor wafer bonding part 3a of the adhesive layer 2 falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip. Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary. Moreover, the above-mentioned thing can be used as a light source used for ultraviolet irradiation.

  Next, as shown in FIG. 3, the semiconductor chip 5 formed by dicing is die-bonded to the adherend 6 through the die-bonding film 3a. Die bonding is performed by pressure bonding. The conditions for die bonding are not particularly limited, and can be set as necessary. Specifically, for example, it can be performed within a die bonding temperature of 80 to 160 ° C., a bonding pressure of 5 N to 15 N, and a bonding time of 1 to 10 seconds.

  Subsequently, the die-bonding film 3a is heat-treated to be thermally cured, and the semiconductor chip 5 and the adherend 6 are bonded. As the heat treatment conditions, the temperature is in the range of 80 to 180 ° C., and the heating time is 0.1 to 24 hours, preferably 0.1 to 4 hours, more preferably 0.1 to 1 hour. Preferably there is.

  Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the adherend 6 and an electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 is performed. As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire or the like is used. The temperature at the time of wire bonding is 80 to 250 ° C, preferably 80 to 220 ° C. The heating time is several seconds to several minutes. The connection is performed by a combination of vibration energy by ultrasonic waves and pressure energy by pressurization while being heated so as to be within the temperature range.

  Here, it is preferable that the die-bonding film 3a after thermosetting has a shear adhesive force of 0.01 MPa or more at 175 ° C., and more preferably 0.01 to 5 MPa. By setting the shear adhesive force at 175 ° C. after thermosetting to 0.01 MPa or more, due to ultrasonic vibration or heating in the wire bonding step, the die bond film 3a and the semiconductor chip 5 or the adherend 6 It is possible to prevent shear deformation from occurring on the bonding surface. That is, the semiconductor element does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  In addition, you may perform a wire bonding process, without thermosetting the die-bonding film 3 by heat processing. In this case, the shear bond strength of the die bond film 3a at 25 ° C. is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa, with respect to the adherend 6. Even if the wire bonding step is performed without thermosetting the die bond film 3a by setting the shear adhesive force to 0.2 MPa or more, the die bond film 3a and the semiconductor chip 5 are caused by ultrasonic vibration or heating in the step. Alternatively, shear deformation does not occur on the adhesion surface with the adherend 6. That is, the semiconductor element does not move due to ultrasonic vibration during wire bonding, thereby preventing the success rate of wire bonding from decreasing.

  Further, the uncured die bond film 3a is not completely thermally cured even if the wire bonding process is performed. Furthermore, the shear bond strength of the die bond film 3a needs to be 0.2 MPa or more even within the temperature range of 80 to 250 ° C. This is because if the shear adhesive force is less than 0.2 MPa within the temperature range, the semiconductor element moves due to ultrasonic vibration during wire bonding, and wire bonding cannot be performed, resulting in a decrease in yield.

  Subsequently, a sealing step for sealing the semiconductor chip 5 with the sealing resin 8 is performed. This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step is performed by molding a sealing resin with a mold. As the sealing resin 8, for example, an epoxy resin is used. Although the heating temperature at the time of resin sealing is normally performed at 175 degreeC for 60 to 90 second, this invention is not limited to this, For example, it can cure at 165 to 185 degreeC for several minutes. As a result, the sealing resin is cured, and when the die bond film 3a is not thermally cured, the die bond film 3a is also thermally cured. That is, in the present invention, even when the post-curing process described later is not performed, the die-bonding film 3a can be thermally cured and bonded in this process, and the number of manufacturing processes is reduced. And it can contribute to shortening of the manufacturing period of a semiconductor device.

  In the post-curing step, the sealing resin 8 that is insufficiently cured in the sealing step is completely cured. Even in the case where the die bond film 3a is not thermally cured in the sealing process, the die bond film 3a is thermally cured together with the curing of the sealing resin 8 in this process, thereby allowing the adhesive fixing. Although the heating temperature in this process changes with kinds of sealing resin, it exists in the range of 165-185 degreeC, for example, and heating time is about 0.5 to 8 hours.

  Further, as shown in FIG. 4, the dicing die-bonding film of the present invention can also be suitably used when a plurality of semiconductor chips are stacked and three-dimensionally mounted. FIG. 4 is a schematic cross-sectional view showing an example in which a semiconductor chip is three-dimensionally mounted through a die bond film. In the case of the three-dimensional mounting shown in FIG. 4, first, at least one die bond film 3a cut out to have the same size as the semiconductor chip is pasted on the adherend 6, and then the semiconductor chip 5 is attached via the die bond film 3a. Then, die bonding is performed so that the wire bond surface is on the upper side. Next, the die bond film 13 is pasted while avoiding the electrode pad portion of the semiconductor chip 5. Further, another semiconductor chip 15 is die-bonded on the die-bonding film 13 so that the wire-bonding surface is on the upper side. Thereafter, the die bond films 3a and 13 are heated to be thermoset and bonded and fixed, thereby improving the heat resistance strength. As for the heating conditions, it is preferable that the temperature is in the range of 80 to 200 ° C. and the heating time is in the range of 0.1 to 24 hours, as described above.

  In the present invention, the die bond films 3a and 13 may be simply die bonded without being thermally cured. Thereafter, wire bonding is performed without passing through a heating step, and the semiconductor chip is further sealed with a sealing resin, and the sealing resin can be after-cured.

  Next, a wire bonding process is performed. Thereby, each electrode pad in the semiconductor chip 5 and the other semiconductor chip 15 and the adherend 6 are electrically connected by the bonding wire 7. In addition, this process is implemented without passing through the heating process of die-bonding films 3a and 13.

  Subsequently, a sealing process for sealing the semiconductor chip 5 and the like with the sealing resin 8 is performed, and the sealing resin is cured. At the same time, when the thermosetting is not performed, the adherend 6 and the semiconductor chip 5 are bonded and fixed by the thermosetting of the die bond film 3a. Further, the die-bonding film 13 is thermally cured to bond and fix between the semiconductor chip 5 and the other semiconductor chip 15. In addition, you may perform a postcure process after a sealing process.

  Even in the case of three-dimensional mounting of semiconductor chips, since the heat treatment by heating the die bond films 3a and 13 is not performed, the manufacturing process can be simplified and the yield can be improved. In addition, since the adherend 6 is not warped, and the semiconductor chip 5 and other semiconductor chips 15 are not cracked, the semiconductor element can be made thinner.

  Moreover, as shown in FIG. 5, it is good also as three-dimensional mounting which laminated | stacked the spacer via the die-bonding film between the semiconductor chips. FIG. 5 is a schematic cross-sectional view showing an example in which two semiconductor chips are three-dimensionally mounted with a die bond film via a spacer.

  In the case of the three-dimensional mounting shown in FIG. 5, first, the die bond film 3, the semiconductor chip 5, and the die bond film 21 are sequentially laminated on the adherend 6 and die bonded. Furthermore, on the die bond film 21, the spacer 9, the die bond film 21, the die bond film 3a, and the semiconductor chip 5 are sequentially laminated and die bonded. Thereafter, the die bond films 3a and 21 are heated to be thermoset and bonded and fixed, thereby improving the heat resistance strength. As for the heating conditions, it is preferable that the temperature is in the range of 80 to 200 ° C. and the heating time is in the range of 0.1 to 24 hours, as described above.

  In the present invention, the die bond films 3a and 21 may be simply die bonded without being thermally cured. Thereafter, wire bonding is performed without passing through a heating step, and the semiconductor chip is further sealed with a sealing resin, and the sealing resin can be after-cured.

  Next, as shown in FIG. 5, a wire bonding process is performed. Thereby, the electrode pad in the semiconductor chip 5 and the adherend 6 are electrically connected by the bonding wire 7. In addition, this process is implemented without passing through the heating process of die-bonding films 3a and 21.

  Subsequently, a sealing step of sealing the semiconductor chip 5 with the sealing resin 8 is performed, and the sealing resin 8 is cured, and when the die bond films 3a and 21 are uncured, by thermosetting these, Adhesive fixing is performed between the adherend 6 and the semiconductor chip 5 and between the semiconductor chip 5 and the spacer 9. Thereby, a semiconductor package is obtained. The sealing process is preferably a batch sealing method in which only the semiconductor chip 5 side is sealed on one side. Sealing is performed to protect the semiconductor chip 5 attached on the pressure-sensitive adhesive sheet, and the typical method is molding in a mold using the sealing resin 8. In that case, it is common to perform a sealing process simultaneously using the metal mold | die which consists of an upper metal mold | die and a lower metal mold | die which have a some cavity. The heating temperature at the time of resin sealing is preferably in the range of 170 to 180 ° C, for example. A post-curing step may be performed after the sealing step.

  The spacer 9 is not particularly limited, and for example, a conventionally known silicon chip or polyimide film can be used. A core material can be used as the spacer. It does not specifically limit as a core material, A conventionally well-known thing can be used. Specifically, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a resin substrate reinforced with glass fibers or plastic non-woven fibers, a mirror silicon wafer, a silicon substrate or A glass adherend can be used.

  Hereinafter, preferred embodiments of the present invention will be described in detail by way of example. However, the materials, blending amounts, and the like described in the examples are not intended to limit the scope of the present invention only to those unless otherwise specified. “Parts” means parts by weight.

Example 1
228 parts of epoxy resin A (manufactured by JER Co., Ltd., Epicoat 1004) with respect to 100 parts of acrylic acid ester-based polymer (manufactured by Negami Kogyo Co., Ltd., Paracron W-197CM) mainly composed of ethyl acrylate-methyl methacrylate , 206 parts of epoxy resin B (manufactured by JER Co., Ltd., Epicoat 827), 446 parts of phenol resin (manufactured by Mitsui Chemicals, Inc., Millex XLC-4L), spherical alumina as a thermally conductive filler (Electrochemical Co., Ltd.) Made by DAM-0, average particle diameter 3 μm, thermal conductivity 40 W / m · K 1500 parts, curing catalyst (Shikoku Kasei Co., Ltd., C11-Z) 3 parts dissolved in methyl ethyl ketone, concentration 23.6 wt. % Adhesive composition was prepared.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thereby, a heat-dissipating die-bonding film having a thickness of 40 μm was produced.

(Example 2)
In this example, a heat-dissipating die-bonding film according to this example was produced in the same manner as in Example 1 except that the content of the thermally conductive filler was changed to 3000 parts.

(Example 3)
In this example, a heat-dissipating die-bonding film according to this example was produced in the same manner as in Example 1 except that the content of the thermally conductive filler was changed to 8000 parts.

Example 4
In this example, spherical zinc oxide (manufactured by Sakai Chemical Industry Co., Ltd., type 1 zinc, average particle size 0.6 μm, thermal conductivity 54 W / m · K) is used as the thermally conductive filler, and its content A heat-dissipating die-bonding film according to this example was produced in the same manner as in Example 1 except that the amount was changed to 8000 parts.

(Example 5)
In this example, spherical alumina A (DAM-0, manufactured by Denki Kagaku Kogyo Co., Ltd., average particle size 3 μm, thermal conductivity 40 W / m · K) 6000 parts as a thermally conductive filler, spherical alumina Except for using 2000 parts of B (ASFP-20, manufactured by Denki Kagaku Kogyo Co., Ltd., average particle size 0.2 μm, thermal conductivity 40 W / m · K), the same as in Example 1 was used. A heat-dissipating die-bonding film according to the example was produced.

(Comparative Example 1)
228 parts of epoxy resin A (manufactured by JER Co., Ltd., Epicoat 1004) with respect to 100 parts of acrylic acid ester-based polymer (manufactured by Negami Kogyo Co., Ltd., Paracron W-197CM) mainly composed of ethyl acrylate-methyl methacrylate , 206 parts of epoxy resin B (manufactured by JER Co., Ltd., Epicoat 827), 446 parts of phenolic resin (manufactured by Mitsui Chemicals, Inc., Millex XLC-4L), spherical alumina as a heat conductive filler (Electrochemical Co., Ltd.) Manufactured by DAM-0, average particle size 3 μm, thermal conductivity 40 W / m · K 100 parts, curing catalyst (Shikoku Kasei Co., Ltd., C11-Z) 3 parts dissolved in methyl ethyl ketone, concentration 23.6 wt. % Adhesive composition was prepared.

  The adhesive composition solution was applied on a release film (release liner) made of a polyethylene terephthalate film having a thickness of 50 μm after the silicone release treatment, and then dried at 130 ° C. for 2 minutes. Thus, a die bond film having a thickness of 40 μm was produced.

(Comparative Example 2)
In this comparative example, spherical silica (manufactured by Admatex Co., Ltd., S0-25R, average particle size 0.5 μm, thermal conductivity 10 W / m · K) is used as the thermally conductive filler, and the content thereof is Except having changed into 1500 parts, it carried out similarly to the said Example 1, and produced the heat dissipation die-bonding film which concerns on this comparative example.

(Average particle size of filler)
About the average particle diameter of the filler used by each Example and the comparative example, it measured using the photometric type particle size distribution meter (The product made from HORIBA, apparatus name; LA-910).

(Thermal conductivity)
The die-bonding films produced in each example and comparative example were heat-treated in a dryer at 175 ° C. for 1 hour to be thermally cured. Thereafter, the thermal diffusivity α (m ² / s) of each die bond film was measured by a TWA method (temperature wave thermal analysis method, measuring device; Eye Phase Mobile, manufactured by Eye Phase Co., Ltd.). Next, the specific heat Cp (J / g · ° C.) of each die bond film was measured by the DSC method. Specific heat measurement was performed using DSC 6220 manufactured by SII Nano Technology Co., Ltd. under conditions of a temperature rising rate of 10 ° C./min and a temperature of 20 to 300 ° C., and based on the obtained experimental data, a JIS handbook (specific heat capacity) It was calculated by the measuring method K-7123). Furthermore, the specific gravity of each die bond film was measured.

Based on the values of thermal diffusivity α, specific heat Cp, and specific gravity obtained by each measurement, the thermal conductivity was calculated by the following formula. The results are shown in Table 1 below.

(Storage modulus)
The die-bonding films produced in each example and comparative example were heat-treated in a dryer at 175 ° C. for 1 hour to be thermally cured. Thereafter, it was cut into a strip shape having a length of 22.5 mm (measured length) and a width of 10 mm with a cutter knife, and stored at 260 ° C. using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Scientific Co., Ltd.). The elastic modulus was measured. The measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min. The results are shown in Table 1 below.

(Evaluation of moisture absorption reliability)
The die bond film obtained in each example and comparative example was attached to a 5 mm square semiconductor chip under the condition of a temperature of 40 ° C. Next, nine of the semiconductor chips were die-bonded on the BGA substrate via a die-bonding film. The die bond conditions were a die bond temperature of 120 ° C., a die bond pressure of 0.1 MPa, and a die bond time of 1 second.

  Subsequently, heat treatment is performed in a dryer at 100 ° C. for 10 hours, and thereafter a molding machine (manufactured by TOWA, Model-Y-series) is formed using a sealing resin (manufactured by Nitto Denko, trade name: GE-100). And molded. The molding conditions were 175 ° C., preheating setting of 3 seconds, injection time of 11.5 seconds, and curing time of 90 seconds. Further, the semiconductor package was obtained by heat curing under the condition of 175 ° C. × 5 hr.

  This semiconductor package was subjected to a moisture absorption treatment for 168 hours in an environment of a temperature of 60 ° C. and a relative humidity of 80% RH, using a thermo-hygrostat. Thereafter, each semiconductor package was put into an IR reflow furnace in which the surface peak temperature of the package was 260 ° C. or higher and the temperature was set so that it could be held for 30 seconds. Then, after cutting the center part of the package and polishing the cut surface, the cross section of the package was observed using an ultrasonic microscope. In the cross section of the package, it was observed whether or not peeling occurred at the interface between the semiconductor chip and the BGA substrate. As a result of the observation, the case where the number of semiconductor chips in which peeling was recognized was 3 or less was evaluated as ○, and the case where it was 4 or more was evaluated as ×. The results are shown in Table 1 below.

(result)
As can be seen from Table 1 below, it was confirmed that all the die bond films according to Examples 1 to 3 had a thermal conductivity of 2 W / m · K or more and were excellent in heat dissipation. On the other hand, in the die-bonding films according to Comparative Examples 1 and 2, the thermal conductivity was 0.2 W / m · K and 1.2 W / m · K, respectively, the thermal conductivity was low, and the heat dissipation was inferior. Moreover, also about the storage elastic modulus in 260 degreeC, all the die-bonding films of a present Example have shown the high value. As a result, it was confirmed that the die bond film according to this example can prevent shear deformation from occurring on the bonding surface between the die bond film and the adherend due to ultrasonic vibration or heating when performing wire bonding. It was. Furthermore, all of the die bond films according to the present example were excellent in moisture absorption reliability. For example, it was confirmed that cracks could be prevented from occurring in a semiconductor package in a reflow process.

DESCRIPTION OF SYMBOLS 1 Base material 2 Adhesive layer 3, 3 ', 13, 21 Heat-radiating die-bonding film 3a Die-bonding film 5 Semiconductor chip 6 Adhering body 7 Bonding wire 8 Sealing resin 9 Spacer 10, 11 Dicing die-bonding film 15 Semiconductor chip 16 Wafer ring

Claims (7)

A heat-dissipating die-bonding film for adhering and fixing a semiconductor element on an adherend,
It includes at least a thermoplastic resin, a thermosetting resin, and a heat conductive filler having a thermal conductivity of 12 W / m · K or more, and the content of the heat conductive filler is based on the total of the organic resin component and the heat conductive filler. A heat-dissipating die-bonding film in the range of 50% to 120% by weight.   The heat-dissipating die-bonding film according to claim 1, wherein the heat conductive filler has an average particle size within a range of 0.01 to 10 μm.   The thermally conductive filler includes two types of thermally conductive fillers having different average particle diameters, and one of the thermally conductive fillers has an average particle diameter in the range of 0.01 to 1 μm and the other heat conductive filler. The heat-dissipating die-bonding film according to claim 2, wherein the conductive filler has an average particle size in the range of 1 to 10 μm.   The heat conductive filler is at least one selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, magnesium hydroxide, aluminum nitride, and silicon carbide. 2. A heat dissipating die-bonding film according to item 1.   The heat-dissipating die-bonding film according to any one of claims 1 to 4, wherein a storage elastic modulus at 260 ° C after heat-curing at 175 ° C for 1 hour is 0.1 MPa or more.   The heat-dissipating die-bonding film according to any one of claims 1 to 5, wherein a weight reduction amount at 260 ° C after heat-curing at 175 ° C for 1 hour is 1% by weight or less.   A dicing die-bonding film having a structure in which the heat dissipating die-bonding film according to claim 1 is laminated on a dicing film.

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