JP2013115203A - Method of manufacturing semiconductor wafer, and semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer which prevents a scratch flaw from being generated on an edge of a wafer by contacting with a contactless conveyance member due to warpage of the wafer when the waver is carried in.SOLUTION: In a method of manufacturing a semiconductor device, a camera 14 is fitted in a camera fitting hole 18 of a reactor 10 and made ready to photograph a wafer in the reactor 10. A wafer W is carried in the reactor 10 heated to a predetermined wafer feed temperature in advance, and placed on a susceptor 11. At that time, an edge of the wafer W warps upward temporarily, so this state is photographed by the camera 14. A warpage amount of the wafer W is determined from the photographed image, and a suitable wafer feed temperature, at which the warpage amount dose not cause the wafer to contact with the contactless conveyance member, is determined based upon the determined warpage amount. Then, when a wafer of the same type with the wafer is processed, the interior of the reactor 10 is set at the suitable wafer feed temperature.

Description

  The present invention relates to a method for manufacturing a semiconductor wafer, and more particularly to a method for measuring the amount of warpage of a wafer in a heat treatment apparatus such as an epitaxial growth apparatus. The present invention also relates to a semiconductor manufacturing apparatus using such a semiconductor wafer manufacturing method.

  As an example of a semiconductor manufacturing apparatus for heat-treating a semiconductor wafer, an epitaxial growth apparatus for growing a single crystal thin film (epitaxial film) on a semiconductor wafer is known.

  In the method of forming an epitaxial film, a semiconductor wafer at room temperature is adsorbed and held by a non-contact conveying member and carried into a reaction furnace at a high temperature of 500 ° C. or higher. Thereafter, the semiconductor wafer is transferred to the susceptor by a non-contact conveying member, and heat treatment is performed in the reaction furnace, whereby an epitaxial film is formed.

  However, when a semiconductor wafer is carried into a reaction furnace in which a high temperature atmosphere of 500 ° C. or higher is formed and the wafer is transferred to a susceptor, the wafer warps in the reaction furnace, and the edge portion of the wafer becomes a non-contact conveying member. As a result, a flaw due to contact with the non-contact conveying member occurs at a specific position of the wafer.

  Patent Document 1 describes a method for preventing damage caused by warpage of a wafer and improving the quality of the wafer. In this method, the image of the semiconductor wafer relay-supported by the wafer transfer member is captured by the monitor unit, and the control unit identifies the semiconductor wafer at the time of warp based on the image of the semiconductor wafer at the time of warp captured by the monitor unit. The shape of the part is compared with the shape of the specific part at the time of non-warping, and after both shapes are the same, the semiconductor wafer is transferred from the wafer transfer member to the wafer support.

  Patent Document 2 describes an apparatus for observing a reaction chamber attached to an epitaxial vapor deposition apparatus. This observation apparatus includes an imaging means for imaging the reaction chamber, a storage case for storing the imaging means, and a coolant supply means for supplying a coolant into the storage case. A translucent member made of a quartz glass plate having a film is attached.

Japanese Patent No. 3891636 JP 2007-158106 A

  The conventional method described in Patent Document 1 is effective against warping of the wafer that occurs before the wafer is placed on the susceptor in the reaction furnace, but occurs after the wafer is placed on the susceptor. It has no effect on warping. Further, the conventional method cannot grasp the amount of warp of the wafer, and quantitative evaluation is difficult.

  The apparatus described in Patent Document 2 is effective in observing the reaction chamber and detecting whether or not the wafer is warped, but cannot grasp the amount of warpage of the wafer and is quantitative. Evaluation is difficult.

  The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to observe the inside of the reaction furnace and to grasp the warpage amount of the semiconductor wafer and to set an appropriate carry-in temperature condition. An object of the present invention is to provide a semiconductor wafer manufacturing method and a semiconductor manufacturing apparatus.

  In order to solve the above problems, a method for manufacturing a semiconductor wafer according to the present invention includes a step of heating a reaction furnace to set a predetermined temperature, a semiconductor wafer is carried into the reaction furnace, and a susceptor in the reaction furnace is placed on the susceptor. And mounting the semiconductor wafer on the susceptor, and photographing the warpage of the semiconductor wafer on the susceptor with a camera, the camera being installed on a side of the reaction furnace, It is characterized by shooting from the direction.

  According to the present invention, the amount of warpage of the semiconductor wafer in the reaction furnace can be ascertained for each product type, and the wafer loading conditions can be optimized. As a result, when the semiconductor wafer is transported into the reaction furnace, it is possible to prevent the wafer from being greatly warped and coming into contact with the non-contact transport member, and the generation of scratches on the wafer can be prevented.

  The method for manufacturing a semiconductor wafer according to the present invention further includes a step of calculating a warpage amount of the semiconductor wafer from a position of an edge of the semiconductor wafer and a position of a member in the reaction furnace which are reflected in an image photographed by the camera. Is preferred. According to this step, the warpage amount of the semiconductor wafer can be accurately and automatically calculated.

  The method for manufacturing a semiconductor wafer according to the present invention preferably further includes a step of adjusting a power of a lamp for heating the reaction furnace based on a warpage amount of the semiconductor wafer. According to this process, from the measurement of the amount of warpage of the wafer to the temperature setting of the reactor can be automated, thereby improving the productivity.

  In the present invention, a wafer carry-in port and a gas introduction port are provided on the side of the reaction furnace, and are located on the side of the reaction furnace, as viewed from the susceptor, It is preferable that a gas discharge port and a camera mounting hole are provided at opposing positions, and the camera is inserted into the reaction furnace through the camera mounting hole. According to this configuration, the arrangement of the camera does not disturb the loading of the wafer into the reaction furnace, and it is possible to reliably photograph the warped state of the wafer. In addition, maintenance holes that are often provided on the gas discharge port side can be used as camera mounting holes, and existing functions can be used effectively.

  In the present invention, the camera is preferably inserted into the reactor through a quartz sheath covering the camera. According to this, particle contamination of the reaction furnace and leakage of the gas in the furnace can be prevented.

  In the method of manufacturing a semiconductor wafer according to the present invention, it is preferable that a filter made of a quartz plate deposited with gold is provided between the camera and the quartz sheath, and the camera takes an image that can be seen through the filter and the quartz sheath. According to this, the light from the lamp can be blocked, the incident energy can be lowered, and an image with appropriate contrast can be taken.

  The semiconductor wafer manufacturing method according to the present invention increases the shutter speed of the camera when the temperature in the reaction furnace is relatively high, and decreases the shutter speed of the camera when the temperature in the reaction furnace is relatively low. It is preferable to do. According to this, it is possible to capture an image with appropriate contrast.

  In order to solve the above-described problem, a semiconductor manufacturing apparatus according to the present invention includes a reaction furnace in which a heat treatment of a semiconductor wafer is performed, a susceptor that supports the semiconductor wafer in the reaction furnace, and a plurality of heating furnaces. A lamp and a camera that is carried into the reaction furnace and photographs the warpage of the semiconductor wafer placed on the susceptor, the camera being installed on a side of the reaction furnace, It is characterized by taking a picture from the end face direction.

  The semiconductor manufacturing apparatus according to the present invention further includes an image processing unit that calculates a warpage amount of the semiconductor wafer from a position of an edge of the semiconductor wafer and a position of a member in the reaction furnace that are reflected in an image photographed by the camera. Is preferred. According to this configuration, the warpage amount of the semiconductor wafer can be accurately and automatically calculated.

  Preferably, the semiconductor manufacturing apparatus according to the present invention further includes a quartz sheath covering the camera, and the camera is inserted into the reaction furnace through the quartz sheath. According to this, particle contamination of the reaction furnace and leakage of the gas in the furnace can be prevented.

  The semiconductor manufacturing apparatus according to the present invention further includes a filter made of a gold-deposited quartz plate provided between the camera and the quartz sheath, and the camera takes an image that can be seen through the filter and the quartz sheath. It is preferable to do. According to this, the light from the lamp can be blocked, the incident energy can be lowered, and an image with appropriate contrast can be taken.

  The semiconductor manufacturing apparatus according to the present invention preferably further includes a database that records the relationship between the temperature in the reaction furnace and the amount of warpage of the semiconductor wafer in association with the photographing of the semiconductor wafer. In this case, the semiconductor manufacturing apparatus according to the present invention further includes a control unit that controls the power of the plurality of lamps, and the control unit stores the database when performing a film forming process of the same kind as the semiconductor wafer. Referring to this, it is preferable to determine the temperature in the reaction furnace when the semiconductor wafer of the same kind is carried in. According to this configuration, it is possible to automate from the measurement of the amount of warpage of the wafer to the temperature setting of the reaction furnace, thereby improving the productivity.

  ADVANTAGE OF THE INVENTION According to this invention, the inside of a reaction furnace can be observed, the manufacturing method and semiconductor manufacturing apparatus of a semiconductor wafer which can grasp | ascertain the curvature amount of a semiconductor wafer and can set appropriate carrying-in temperature conditions can be provided.

FIG. 1 is a longitudinal sectional view schematically showing a semiconductor manufacturing apparatus according to the present invention. 2A and 2B are schematic diagrams for explaining the conveyance of the wafer, wherein FIG. 2A shows a state before placing the wafer, and FIG. 2B shows a state after placing the wafer. FIG. 3 is a schematic plan view showing the configuration of the camera. FIG. 4 is a schematic diagram illustrating an example of camera calibration work. FIG. 5 is a flowchart showing a method for measuring the amount of warpage of the wafer using the semiconductor manufacturing apparatus according to the present embodiment. FIG. 6 is a time chart showing an example of a temperature recipe in the reaction furnace, where (a) shows a standard recipe before adjusting the wafer input temperature, and (b) shows an adjusted recipe. FIG. 7 is a graph showing the measurement result of Example 1 and the measurement result of the warpage amount of the wafer. FIG. 8 is a graph showing the measurement result of Example 2 and the measurement result of the warpage amount of wafers having different substrate types. FIG. 9 is a graph showing the measurement results of Example 3, showing the variation in the amount of warpage of 10 wafers.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a longitudinal sectional view schematically showing a semiconductor manufacturing apparatus 1 according to a preferred embodiment of the present invention.

  As shown in FIG. 1, the semiconductor manufacturing apparatus 1 according to the present embodiment is a single wafer type epitaxial growth apparatus for vapor-phase growing an epitaxial film on the surface of a silicon wafer, and a reactor in which a film formation process of a wafer W is performed. 10, a susceptor 11 that supports the wafer W in the reaction furnace 10, a susceptor ring 12 provided around the susceptor 11, an upper lamp 13a and a lower lamp 13b that heat the reaction furnace 10 from above and below, respectively. The camera 14 is provided detachably with respect to the reaction furnace 10, and a system control unit 15 for controlling the entire apparatus.

  The reaction furnace 10 is made of a transparent material such as quartz. The reaction furnace 10 has a gas inlet 16 and a gas outlet 17 facing each other, and a camera mounting hole 18 is provided on the gas outlet 17 side. As the camera mounting hole 18, a preliminary maintenance hole that does not need to be used during a normal film forming process can be used.

During the epitaxial growth process, a reaction gas containing a source gas such as trichlorosilane (SiHCl ₃ ) is supplied from the gas inlet 16 into the reaction furnace 10. The reaction gas is supplied in parallel (horizontal direction) to the surface of the wafer W, passes through the surface of the wafer W, contributes to the growth of the epitaxial film, and is then discharged to the outside through the gas discharge port 17.

  The susceptor 11 is supported by a rotating shaft 21, and the wafer W rotates with the susceptor 11. A susceptor ring 12 is fixedly provided outside the circular susceptor 11. The height of the main surface of the susceptor ring 12 coincides with that of the susceptor 11. By this susceptor 11 and susceptor ring 12, the internal space of the reaction furnace 10 is divided into an upper space and a lower space.

  The upper lamp 13a and the lamp 13b are, for example, halogen lamps. Each of the plurality of upper lamps 13a and lower lamps 13b is installed at the upper part of the wafer and the lower part of the wafer in order to improve the thermal uniformity of the wafer W.

  FIGS. 2A and 2B are schematic views for explaining the conveyance of the wafer.

  As shown in FIG. 2A, a non-contact transfer member 22 that holds the wafer W in a non-contact state is used to transfer the wafer W into the reaction furnace 10. Although not particularly limited, the non-contact conveying member 22 may be a Bernoulli chuck.

  The wafer W is carried into the reaction furnace 10 through the wafer carry-in port 23 and is placed on the susceptor 11 by releasing the adsorption above the susceptor 11. When the processed wafer on the susceptor 11 is taken out, the main surface of the non-contact transfer member 22 is attracted and held on the wafer W, and then the wafer W is carried out of the reaction furnace 10.

  As described above, when the wafer W is loaded into the high temperature reaction furnace 10 of 500 ° C. or more and transferred to the susceptor 11, the wafer W warps on the susceptor 11 as shown in FIG. May contact the non-contact conveying member 22. For example, when the height H from the surface of the wafer without warping placed on the susceptor 11 to the non-contact transport member 22 is 6 mm, the wafer contacts the non-contact transport member 22 when the wafer warps by 6 mm or more. . Therefore, in this embodiment, the camera 14 is used to photograph the warped state of the wafer.

  The camera 14 is installed on the side of the reaction furnace 10 and photographs the wafer W from the end surface direction. The camera 14 is inserted into the reaction furnace 10 through a camera mounting hole 18 provided on the gas discharge port 17 side, and is detachable from the reaction furnace 10. The camera 14 is used only when measuring the amount of warpage of the wafer W, and can be detached from the reaction furnace 10 during normal operation (during film formation).

  The camera 14 is connected to the system control unit 15, and the photographing operation can be controlled from the system control unit 15. An image photographed by the camera 14 is taken into the image processing unit 15a in the system control unit 15, and the warpage amount of the silicon wafer W is calculated. Further, the temperature in the reaction furnace 10 (wafer input temperature) at the time of carrying in the wafer is determined from the amount of warpage of the wafer W. These measurement results are stored in the database 15b of the system control unit 15 and referred to during actual operation. That is, the temperature control unit 15c sets the temperature of the reaction furnace 10 with reference to the database 15b, and controls the power of the upper lamp 13a and the lower lamp 13b.

  The measurement of the amount of warpage of the wafer is carried out for unmeasured varieties. For the types of wafers whose warpage has already been measured, the wafer input temperature can be determined based on the measurement data stored in the database 15b. The types of wafers are distinguished based on various parameters that characterize the wafer, such as wafer diameter, thickness, substrate type (P type / N type), and manufacturing conditions.

  FIG. 3 is a schematic plan view showing the configuration of the camera 14.

  As shown in FIG. 3, the camera 14 is a water-cooled heat-resistant scope that circulates water inside the scope, and includes a cooling water inlet 14a and a cooling water outlet 14b. The heat-resistant scope is inserted into the reaction furnace 10 through a camera mounting hole 18 provided on the side surface of the reaction furnace 10. At that time, in order to prevent particle contamination and leakage of gas in the furnace, a quartz sheath (quartz tube) 24 is inserted into the camera mounting hole 18 and a tip of the camera 14 is inserted into the quartz sheath 24 as shown in the figure. It has a structure to do. In order to obtain a clear image without distortion, the tip surface of the quartz sheath 24 needs to be perpendicular to the optical axis of the camera 14 and transparent. Further, an optical filter (quartz plate filter) 25 made of a quartz plate vapor-deposited between the quartz sheath 24 and the tip of the camera 14 in order to block the light from the upper lamp 13a and the lower lamp 13b and reduce the incident energy. It is preferable to interpose.

  The camera 14 needs to be able to observe the inside of the reaction furnace 10 in an assumed temperature range. For this purpose, it is necessary to adjust the shutter speed of the camera 14 in accordance with the temperature in the reaction furnace 10 when the wafer is loaded.

  For example, if the shutter speed of the camera 14 is set to 1/60 seconds when the temperature in the reaction furnace 10 is 900 ° C., the amount of incident light is too large and the image becomes saturated and observation becomes difficult. When set to / 250 seconds, observation becomes possible because the contrast becomes appropriate. Conversely, if the shutter speed of the camera 14 is set to 1/250 seconds when the temperature in the reactor 10 is 600 ° C., the amount of incident light is too small and the image becomes dark and observation becomes difficult. When it is set to 1/60 seconds, the contrast becomes appropriate and observation is possible. When the temperature in the reaction furnace 10 is 500 ° C. or lower, the image is too dark and difficult to observe no matter how the shutter speed is changed, but the quartz plate filter 25 provided at the tip of the camera 14 is removed. Observation becomes possible.

  FIG. 4 is a schematic diagram illustrating an example of the calibration work of the camera 14.

  In order to quantify the amount of warpage of the wafer using an image taken by the camera 14, a calibration operation for calculating a distance per pixel in advance is required. As shown in FIG. 4, the distance per pixel can be calculated by taking an image of graph paper 26 whose vertical and horizontal lengths are known from a position separated by a predetermined distance L.

  FIG. 5 is a flowchart showing a method for measuring the amount of warpage of the wafer using the semiconductor manufacturing apparatus 1 according to the present embodiment.

  As shown in FIG. 5, in the measurement of the amount of warpage of the wafer, first, the camera 14 is attached to the camera mounting hole 18 of the reaction furnace 10 via the quartz sheath 24 and the quartz plate filter 25, and the amount of warpage of the wafer in the reaction furnace 10. Is ready for photographing (step S101).

  Next, the temperature in the reaction furnace 10 is set to a predetermined wafer charging temperature (for example, 900 ° C.) (step S102). An appropriate shutter speed of the camera 14 is also set in advance according to the temperature in the reaction furnace 10.

  Thereafter, the wafer is transferred in a non-contact manner into the reaction furnace 10 (step S103). When the wafer is transferred into the reaction furnace 10, due to the large temperature difference between the susceptor 11 and the wafer, the back side of the wafer is heated rapidly, and the edge of the wafer is temporarily warped. The amount of warpage of the wafer differs depending on the thickness of the wafer and the substrate type such as P-type or N-type. When the amount of warpage of the wafer is large, the wafer contacts the non-contact transfer member 22, thereby forming scratches. Dust is generated and particles adhere to the wafer, deteriorating the quality of the wafer. Therefore, the camera 14 continuously photographs the warping behavior of the wafer within a predetermined time immediately after placing the wafer (step S104).

  Next, the warpage amount of the test wafer is obtained from the photographed image (step S105). When the wafer is warped in the furnace, the position of the edge of the wafer in the image changes, so the amount of change of the wafer is calculated as the amount of warpage of the wafer. The amount of warpage of the wafer can be calculated by converting the distance (pixel) from the susceptor ring 12 to the edge of the wafer into the actual distance based on the calibration result described above. This calculation can be automatically performed by a computer program included in the system control unit 15.

  Thereafter, based on the warpage amount, an appropriate wafer charging temperature that does not come into contact with the non-contact transfer member 22 is obtained (step S106). The amount of warpage of the wafer that does not come into contact with the non-contact conveying member 22 is from the surface of the wafer without warping placed on the susceptor 11 (or from the upper end surface of the susceptor ring 12 flush with the surface of the wafer). It can be expressed as the distance to the main surface of the wand. An appropriate wafer input temperature that does not come into contact with the non-contact transfer member 22 can be determined from a plurality of measurement results obtained by actually changing the wafer input temperature, thereby determining an appropriate wafer input temperature. Can be surely known. Or it is also possible to estimate from calculation based on one measurement result.

  Thereafter, when processing a product wafer of the same type as the test wafer, the power of the upper lamp 13a and the lower lamp 13b is adjusted so that the inside of the reaction furnace 10 has an appropriate wafer charging temperature (step S107). By loading the wafer into the wafer 10, the warpage of the wafer can be suppressed, and the generation of scratches due to contact with the non-contact conveying member 22 can be prevented.

  FIG. 6 is a time chart showing an example of a temperature recipe in the reaction furnace 10, where (a) shows a standard recipe before adjusting the wafer input temperature, and (b) shows an adjusted recipe.

  As shown in FIG. 6 (a), in the standard recipe, the temperature in the reaction furnace 10 is used to load the wafer after the temperature is first raised from the standby temperature at the start of processing and the cleaning in the furnace is performed (T1 to T2). Is cooled at a constant speed (T3). Then, after loading the wafer into the reaction furnace 10 (T4), the temperature in the reaction furnace 10 is again increased at a constant rate (T5), and a hydrogen baking process is performed in which heat treatment is performed in a hydrogen atmosphere for a certain time (for example, 10 minutes). Implement (T6). By this hydrogen baking process, the natural oxide films on the front and back surfaces of the wafer are removed. Then, after adjusting the temperature in the furnace, an epitaxial film is formed on the surface of the wafer by heat treatment in a source gas atmosphere (T7 to T8). Finally, the temperature in the reactor 10 is lowered to unload the wafer (T9).

  On the other hand, as shown in FIG. 6B, in the adjusted recipe, in order to load the wafer after cleaning in the furnace, the temperature in the reaction furnace 10 is lowered to an appropriate temperature (for example, 800 ° C.) at a constant speed, and the wafer is loaded. Since the temperature in the reaction furnace 10 is raised again at a constant speed after loading into the furnace, the time required for loading the wafer becomes longer than in the standard recipe.

  That is, when the wafer charging temperature is set too low so that contact between various wafers and the non-contact transfer member 22 can be prevented, the temperature lowering / heating time for setting the wafer charging temperature becomes longer. There is a problem that productivity deteriorates. However, according to the present invention, since an appropriate wafer charging temperature is set, it is possible to reliably prevent contact between the wafer and the non-contact conveying member 22 while suppressing an excessive decrease in wafer productivity. it can.

  As described above, the semiconductor wafer manufacturing method according to the present embodiment photographs the wafer warpage in the reaction furnace 10 from the camera 14 attached to the side of the reaction furnace 10, and the wafer image is obtained from the obtained image. Since the amount of warpage is calculated, it is possible to establish a wafer loading condition in which no scratch failure occurs. As a result, it is possible to reduce scratch defects that occur when a wafer is carried in, and to improve productivity.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention. Needless to say, it is included in the range.

  For example, in the above embodiment, an epitaxial growth apparatus has been described as an example of a semiconductor manufacturing apparatus, but the present invention is not limited to the epitaxial growth apparatus, and can be applied to various semiconductor manufacturing apparatuses that perform heat treatment.

  As Example 1, a test was performed in which a silicon wafer was carried into an epitaxial growth apparatus (Epsilon 2000 manufactured by ASM) and its warpage behavior was confirmed. As the test wafer, a P-type silicon wafer having a diameter of 125 mm, a thickness of 525 μm, and a specific resistance of 8 to 12 Ω · cm was used. The temperature in the reaction furnace was set to 900 ° C., and the wafer was loaded into the reaction furnace with a Bernoulli chuck and placed on the susceptor. Then, immediately after the wafer was placed on the susceptor, the warping behavior for 12 seconds was continuously photographed by the camera. The camera shutter speed was 1/250 seconds, and five images were taken per second. A gold-deposited quartz plate filter was inserted between the quartz sheath and the camera to adjust the contrast appropriately.

  Next, the measured image was analyzed by an image processing program, and the amount of warpage of the wafer shown in each image was obtained. The measurement results are shown in FIG.

  As is apparent from FIG. 7, the wafer started to warp immediately after being placed on the susceptor, and it was confirmed that the warpage was settled after the warp amount reached the maximum. In particular, it was found that the wafer was most warped after about 4.5 seconds from immediately after placing, not immediately after placing on the susceptor. As described above, by using the epitaxial growth apparatus according to the present embodiment, it is possible to grasp the behavior from the start of the warpage of the wafer until the warpage is settled, and it is possible to calculate the amount of warpage of the wafer.

  Next, as Example 2, three wafers having different substrate types and specific resistances were prepared under the same conditions as in Example 1, and these were put into a reaction furnace to measure the amount of warpage of each wafer. The substrate types of the test wafers were P-type, P + -type, and N--type, and the wafer input temperature was changed in three ways, and the tendency of the warpage amount was confirmed. The result is shown in FIG.

  As shown in FIG. 8, it was found that the amount of warpage of the wafer increases as the wafer input temperature increases, and this tendency is common regardless of the substrate type. It was found that the amount of warpage of the wafer was the largest for the N-type silicon wafer, followed by the amount of warpage of the P-type silicon wafer, and the amount of warpage of the P + type silicon wafer was relatively small.

  Next, as Example 3, ten wafers of the same kind as Example 1 are prepared under the same conditions as Example 1, and these are repeatedly put into a reaction furnace to measure the amount of warpage of each wafer. At the same time, the variation in warpage was evaluated. The result is shown in FIG.

  As is apparent from FIG. 9, the variation in the amount of warpage of the wafer during all 10 times was about ± 0.2 mm (± 0.5 pixel). From this result, it was confirmed that the amount of warpage of the wafer can be stably measured using the semiconductor device according to the present invention.

DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 10 Reactor 11 Susceptor 12 Susceptor ring 13 Lamp 13a Upper lamp 13b Lower lamp 14 Camera 14a Cooling water inlet 14b Cooling water outlet 15 System control part 15a Image processing part 15b Database 15c Temperature control part 16 Gas inlet 17 Gas exhaust port 18 Camera mounting hole 21 Rotating shaft 22 Non-contact transport member 23 Wafer transport port 24 Quartz sheath 25 Quartz plate filter 26 Graph paper

Claims (9)

A method of manufacturing a semiconductor wafer for heat treating a semiconductor wafer,
Heating the reaction furnace and setting it to a predetermined temperature;
Carrying a semiconductor wafer into the reaction furnace, and placing the semiconductor wafer on a susceptor in the reaction furnace;
Photographing the warpage of the semiconductor wafer on the susceptor with a camera,
The said camera is installed in the side of the said reaction furnace, and images the said semiconductor wafer from the end surface direction, The manufacturing method of the semiconductor wafer characterized by the above-mentioned.   2. The method according to claim 1, further comprising a step of calculating a warpage amount of the semiconductor wafer from a position of an edge of the semiconductor wafer and a position of a member in the reaction furnace that are reflected in an image photographed by the camera. Semiconductor wafer manufacturing method.   The method for manufacturing a semiconductor wafer according to claim 2, further comprising a step of adjusting a power of a lamp for heating the reaction furnace based on a warpage amount of the semiconductor wafer. A wafer inlet and a gas inlet are provided on the side of the reactor,
A gas discharge port and a camera mounting hole are provided on the side of the reaction furnace at a position facing the wafer carry-in port and the gas introduction port when viewed from the susceptor,
The method of manufacturing a semiconductor wafer according to claim 1, wherein the camera is inserted into the reaction furnace through the camera mounting hole.   The shutter speed of the camera is increased when the temperature in the reaction furnace is relatively high, and the shutter speed of the camera is decreased when the temperature in the reaction furnace is relatively low. 5. The method for producing a semiconductor wafer according to claim 4. A reactor for heat treatment of semiconductor wafers;
A susceptor for supporting the semiconductor wafer in the reactor;
A plurality of lamps for heating the reactor;
A camera that is carried into the reaction furnace and photographs the warpage of the semiconductor wafer placed on the susceptor;
The said camera is installed in the side of the said reaction furnace, and image | photographs the said semiconductor wafer from the end surface direction, The semiconductor manufacturing apparatus characterized by the above-mentioned.   The image processing unit according to claim 6, further comprising an image processing unit that calculates a warpage amount of the semiconductor wafer from a position of an edge of the semiconductor wafer reflected in an image photographed by the camera and a position of a member in the reaction furnace. The semiconductor manufacturing apparatus as described.   The semiconductor manufacturing apparatus according to claim 6, further comprising a database that records the relationship between the temperature in the reaction furnace and the amount of warpage of the semiconductor wafer in association with the image of the semiconductor wafer. A controller for controlling the power of the plurality of lamps;
The controller is configured to determine a temperature in the reaction furnace when the semiconductor wafer of the same product type is carried in with reference to the database when performing a film forming process of the same product type as the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 8.

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