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JP2005252042A - Substrate holding device - Google Patents

Substrate holding device Download PDF

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Publication number
JP2005252042A
JP2005252042A JP2004061580A JP2004061580A JP2005252042A JP 2005252042 A JP2005252042 A JP 2005252042A JP 2004061580 A JP2004061580 A JP 2004061580A JP 2004061580 A JP2004061580 A JP 2004061580A JP 2005252042 A JP2005252042 A JP 2005252042A
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substrate
holding
heat
thickness
holding device
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Inventor
Yoshiaki Ogawa
好明 小川
Hiroyuki Minowa
裕之 箕輪
Toshiaki Yoshimura
俊秋 吉村
Yoshihisa Inoue
喜央 井上
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SCI Technology Inc
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SCI Technology Inc
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Priority to JP2004061580A priority Critical patent/JP2005252042A/en
Priority to TW093108080A priority patent/TW200531130A/en
Priority to KR1020040023453A priority patent/KR20050089719A/en
Publication of JP2005252042A publication Critical patent/JP2005252042A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a simple substrate holding device which can hold a substrate with temperature distribution kept uniform in a substrate surface. <P>SOLUTION: A holder 20 holds the substrate 10 inside a heat space for performing heat treatment for the substrate 10 serving as a sample. It has a holding part 22 for holding the substrate 10 by coming into contact with a part of a thickness part 10A of the substrate 10 and a supporting part 21 for supporting the holding part 22. The holding part 22 has a groove 25 composed of a tilting part 23 and a bottom 24. The tilting part 23 tilts to form at least the same angle as the edge face of the substrate 10 and comes into contact with the end of the thickness part 10A of the substrate 10. The bottom 24 is wider than the thickness part 10A and contact with the thickness part 10A of the substrate 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、各種基板（シリコンウエハ、ＧａＡｓウエハ、液晶用ガラス基板等）に対して、高速な熱処理（ＲＴＰ：Ｒａｐｉｄ Ｔｈｅｒｍａｌ Ｐｒｏｖｅｓｓｉｎｇ、ＲＴＡ：Ｒａｐｉｄ Ｔｈｅｒｍａｌ Ａｎｎｅａｌｉｎｇ）を行う高速熱処理装置（以下、ＲＴＰ装置という）に設けられた処理室（以下、ＲＴＡ室という）の内部に、基板を保持するための基板保持装置に関するものである。   The present invention is a high-speed heat treatment apparatus (hereinafter referred to as an RTP apparatus) that performs high-speed heat treatment (RTP: Rapid Thermal Annealing, RTA: Rapid Thermal Annealing) on various substrates (silicon wafer, GaAs wafer, liquid crystal glass substrate, etc.). The substrate holding device for holding the substrate in a processing chamber (hereinafter referred to as RTA chamber) provided in FIG.

近年、半導体製造プロセスでは、基板に対する各種熱処理（例えば、酸化膜、窒化膜、ＣＶＤ膜等の成膜、拡散等）を高速で行う、いわゆる高速熱処理の需要が急速に高まっている。この高速熱処理は、最近成長の著しいＦＰＤ（Ｆｌａｔ Ｐａｎｅｌ Ｄｉｓｐｌａｙ）、特に、液晶表示装置（ＬＣＤ）の製造プロセスにおいても、薄膜シリコンの熱処理等に利用可能な技術として注目を集めている。   In recent years, in the semiconductor manufacturing process, the demand for so-called high-speed heat treatment, in which various heat treatments (for example, film formation, diffusion, etc. of oxide films, nitride films, CVD films, etc.) on a substrate are rapidly increased. This high-speed heat treatment is attracting attention as a technique that can be used for heat treatment of thin-film silicon, etc., in the manufacturing process of FPD (Flat Panel Display), particularly a liquid crystal display (LCD), which has been growing rapidly.

図７は、一般的なＲＴＰ装置を示す概略図である。
図８は、ＲＴＰ装置に設けられたＲＴＡ室を示す概略図である。
ＲＴＰ装置１００は、例えば、ローダーカセット１１０と、搬送ロボット１２０と、ＲＴＡ室１３０と、冷却室１４０と、アンローダーカセット１５０等とを備えている。ローダーカセット１１０には、各種基板を必要枚数セットすることができる。搬送ロボット１２０は、ＲＴＰ装置１００の基台１０１に回転可能に設置され、基板１０を１枚ずつ搬送するための伸縮可能なアームを備えている。 FIG. 7 is a schematic diagram showing a general RTP apparatus.
FIG. 8 is a schematic view showing an RTA chamber provided in the RTP apparatus.
The RTP apparatus 100 includes, for example, a loader cassette 110, a transfer robot 120, an RTA chamber 130, a cooling chamber 140, an unloader cassette 150, and the like. A necessary number of various substrates can be set in the loader cassette 110. The transfer robot 120 is rotatably installed on the base 101 of the RTP apparatus 100 and includes an extendable arm for transferring the substrates 10 one by one.

ＲＴＡ室１３０は、図示のように、赤外線ランプ１３１−１，１３１−２と、基板１０をＲＴＡ室１３０内で略水平に配置するための基板支持ピン１３２等とを備えている。基板１０は、その上面を赤外線ランプ１３１−１により熱処理され、同じく、下面を赤外線ランプ１３１−２により熱処理される。
冷却室１４０は、ＲＴＡ室１３０で熱処理された基板１０を室温まで冷却するためのものである。アンローダーカセット１５０には、冷却室１４０で冷却された基板１０を１枚ずつセットできる。 As shown in the figure, the RTA chamber 130 includes infrared lamps 131-1 and 131-2 and substrate support pins 132 for arranging the substrate 10 substantially horizontally in the RTA chamber 130. The upper surface of the substrate 10 is heat-treated by the infrared lamp 131-1, and similarly, the lower surface is heat-treated by the infrared lamp 131-2.
The cooling chamber 140 is for cooling the substrate 10 that has been heat-treated in the RTA chamber 130 to room temperature. In the unloader cassette 150, the substrates 10 cooled in the cooling chamber 140 can be set one by one.

つぎに、基板１０の熱処理の流れについて説明する。
搬送ロボット１２０は、ローダーカセット１１０から１枚の基板１０を取り出して、ＲＴＡ室１３０に搬送する。ＲＴＡ室１３０は、その内部を不活性ガスに置換した後に、赤外線ランプ１３１−１，１３１−２をＯＮにして、基板１０を高速に加熱し、所定の時間及び温度で熱処理した後に降温する。 Next, the flow of heat treatment of the substrate 10 will be described.
The transfer robot 120 takes out one substrate 10 from the loader cassette 110 and transfers it to the RTA chamber 130. After replacing the inside of the RTA chamber 130 with an inert gas, the infrared lamps 131-1 and 131-2 are turned on, the substrate 10 is heated at high speed, and the temperature is lowered after heat treatment at a predetermined time and temperature.

搬送ロボット１２０は、ＲＴＡ室１３０の内部温度が４００℃程度にまで下がった後に、基板１０を取り出して、冷却室１４０に搬送する。冷却室１４０に搬送された基板１０は、所定の時間冷却され、例えば、室温まで冷却される。搬送ロボット１２０は、冷却室１４０で冷却された基板１０を取り出して、アンローダーカセット１５０に搬送する。
なお、基板１０を１枚ずつ処理する、いわゆる枚葉式のＲＴＰ装置１００において、基板１０を連続処理する場合には、基板１０をＲＴＡ室１３０から取り出した直後に、次に処理したい基板１０を搬送ロボット１２０によりＲＴＡ室１３０に搬送して、上述した処理を開始すればよい。 The transfer robot 120 takes out the substrate 10 and transfers it to the cooling chamber 140 after the internal temperature of the RTA chamber 130 has dropped to about 400 ° C. The substrate 10 transferred to the cooling chamber 140 is cooled for a predetermined time, for example, cooled to room temperature. The transfer robot 120 takes out the substrate 10 cooled in the cooling chamber 140 and transfers it to the unloader cassette 150.
In the so-called single-wafer RTP apparatus 100 that processes the substrates 10 one by one, when the substrates 10 are continuously processed, immediately after the substrate 10 is taken out from the RTA chamber 130, the substrate 10 to be processed next is processed. The transfer robot 120 may transfer to the RTA chamber 130 and start the above-described processing.

ここで、ＲＴＡ室１３０での基板１０の保持状態について説明する。
図９は、図８で示した基板１０及び基板支持ピン１３２の拡大図である。
ＲＴＡ室１３０では、上述したように、基板支持ピン１３２により水平方向に保持された基板１０に対して熱処理が行われる。この場合には、基板１０は、例えば、３〜４箇所に設けられた基板支持ピン１３２により、基板１０の適当な部分が保持されている。 Here, the holding state of the substrate 10 in the RTA chamber 130 will be described.
FIG. 9 is an enlarged view of the substrate 10 and the substrate support pins 132 shown in FIG.
In the RTA chamber 130, as described above, the substrate 10 held in the horizontal direction by the substrate support pins 132 is subjected to heat treatment. In this case, an appropriate portion of the substrate 10 is held on the substrate 10 by, for example, substrate support pins 132 provided at three to four locations.

しかしながら、ＲＴＡ室１３０は、赤外線ランプ１３１−１，１３１−２の光を用いて基板１０の熱処理を行っている。このため、基板支持ピン１３２を用いて基板１０を保持した場合には、例えば、赤外線ランプ１３１−２からの光が基板支持ピン１３２により遮られてしまい、基板１０に影が生じ、その結果、この影の部分の熱処理温度が低下してしまう。さらに、基板支持ピン１３２に接触している基板１０の部分は、熱伝導による逃げにより、熱処理温度が低下してしまう。   However, the RTA chamber 130 heats the substrate 10 using the light from the infrared lamps 131-1 and 131-2. For this reason, when the substrate 10 is held using the substrate support pins 132, for example, the light from the infrared lamp 131-2 is blocked by the substrate support pins 132, and a shadow is generated on the substrate 10. As a result, The heat treatment temperature of the shadowed portion is lowered. Furthermore, the heat treatment temperature of the portion of the substrate 10 that is in contact with the substrate support pins 132 is lowered due to escape due to heat conduction.

したがって、基板１０を基板支持ピン１３２で保持した場合には、熱処理温度が低下した部分と、他の部分との間に温度差が生じてしまい、結果的に、基板１０の面内の温度分布が不均一になり、均一な熱処理を行うことが困難となる。具体的には、基板１０としてシリコンウエハを用いた熱処理において、基板支持ピン１３２と接触している部分の周辺に、欠陥が発生することが確認されている。   Therefore, when the substrate 10 is held by the substrate support pins 132, a temperature difference is generated between the portion where the heat treatment temperature is lowered and the other portion, and as a result, the temperature distribution in the surface of the substrate 10. Becomes non-uniform and it becomes difficult to perform uniform heat treatment. Specifically, it has been confirmed that defects are generated around a portion in contact with the substrate support pins 132 in the heat treatment using a silicon wafer as the substrate 10.

図１０は、基板１０をＲＴＡ室１３０で保持する他の例を示す図である。
基板１０は、図示のように、基板支持リング１３３と、リング支持ピン１３４とによって保持されている。基板支持リング１３３は、リング状に形成されており、基板１０の周辺部を保持する。リング支持ピン１３４は、基板支持リング１３３を支持して基板１０を水平に配置する。
しかしながら、この基板支持リング１３３とリング支持ピン１３４とを用いて、基板１０を保持した場合であっても、上述した熱伝導や影により、温度上昇が妨げられ、均一な熱処理を行うことが困難である。具体的には、基板１０の周辺部に欠陥が発生することが確認されている。 FIG. 10 is a view showing another example in which the substrate 10 is held in the RTA chamber 130.
As illustrated, the substrate 10 is held by a substrate support ring 133 and ring support pins 134. The substrate support ring 133 is formed in a ring shape and holds the peripheral portion of the substrate 10. The ring support pins 134 support the substrate support ring 133 and arrange the substrate 10 horizontally.
However, even when the substrate 10 is held using the substrate support ring 133 and the ring support pins 134, the temperature increase is hindered by the heat conduction and shadow described above, and it is difficult to perform uniform heat treatment. It is. Specifically, it has been confirmed that a defect occurs in the peripheral portion of the substrate 10.

一方、高温状態に保持した炉の中に基板を挿入して、基板を急速に加熱する熱処理方法が提案されている（例えば、特許文献１）。
特許文献１は、ＲＴＡが主にランプ加熱であるのに対して、縦型炉（酸化炉やＬＰ−ＣＶＤ等）で用いられてきた抵抗加熱炉により熱処理を行う方法を開示している。具体的には、この抵抗加熱炉内を常時処理したい温度に加熱・保持し、処理したい基板をその雰囲気に比較的高速で１〜２枚挿入し、短時間で取り出すことにより、熱処理を行う。 On the other hand, a heat treatment method has been proposed in which a substrate is inserted into a furnace held at a high temperature and the substrate is heated rapidly (for example, Patent Document 1).
Patent Document 1 discloses a method in which heat treatment is performed in a resistance heating furnace that has been used in a vertical furnace (such as an oxidation furnace or LP-CVD), while RTA is mainly lamp heating. Specifically, heat treatment is performed by heating and maintaining the inside of the resistance heating furnace at a temperature at which treatment is desired, inserting one or two substrates to be treated into the atmosphere at a relatively high speed, and taking out the substrate in a short time.

特許文献１では、基板を水平方向に保持して炉内に挿入する熱処理方法を開示しているが、この方法では、上述した熱伝導や影により、均一な熱処理を行うことが困難となる。   Patent Document 1 discloses a heat treatment method in which a substrate is held in a horizontal direction and inserted into a furnace. However, in this method, it is difficult to perform a uniform heat treatment due to the above-described heat conduction and shadow.

また、特許文献１では、基板を鉛直方向に立てて挿入する方法と、その保持方法を開示しており、さらに、基板を保持する部分（基板と接触する部分）からプロセスガスを噴出させることにより、基板と保持具との付着を防止するとしている。
また、特許文献１では、ガスは比熱が小さく、さらに、炉内に十分に高温に予備加熱され隙間から噴出されるので、基板の温度分布は損なわれないとしている。 Patent Document 1 discloses a method of inserting a substrate in a vertical direction and a holding method thereof, and further, by ejecting a process gas from a portion that holds the substrate (a portion that contacts the substrate). The adhesion between the substrate and the holder is prevented.
Further, in Patent Document 1, since the gas has a small specific heat and is preheated sufficiently high in the furnace and ejected from the gap, the temperature distribution of the substrate is not impaired.

ここで、本発明者は、これらの点について具体的に検討し、以下の知見を得た。
ガスの比熱は小さいにもかかわらず、炉内においてガスの流れのある部分と流れのない部分とでは、僅かな温度差でも熱の移動が激しく起こり、その結果、基板内に温度分布が発生することがわかった。
また、ガスを流さない状態で基板を１１００℃まで上昇させたが、特に問題になるような保持具と基板との付着は見られなかった。 Here, the present inventor specifically examined these points and obtained the following knowledge.
Even though the specific heat of the gas is small, heat transfer occurs vigorously even in a slight temperature difference between the part where the gas flows and the part where the gas does not flow in the furnace, resulting in a temperature distribution in the substrate. I understood it.
Further, although the substrate was raised to 1100 ° C. in a state where no gas was flowed, adhesion between the holder and the substrate, which caused a particular problem, was not observed.

したがって、特許文献１のように、保持具にガスを通す構造を持たせることは、保持具の構造を複雑にしてしまい、結果的に、高価な部品を用いることになり、コスト的に問題がある。
さらに、特許文献１では、保持具の影によって、ヒーターからの赤外線の輻射の低下が生じ、温度低下領域が広がってしまう。このため、基板の同一面内での温度分布が不均一となり、基板の使用有効面積が小さくなってしまう。 Therefore, as in Patent Document 1, providing the holder with a structure that allows gas to pass complicates the structure of the holder, resulting in the use of expensive parts, which is problematic in terms of cost. is there.
Furthermore, in patent document 1, the infrared radiation from a heater falls by the shadow of a holder, and a temperature fall area will spread. For this reason, the temperature distribution in the same plane of the substrate becomes non-uniform, and the usable area of the substrate becomes small.

特開平２００２−１１０６８６号公報Japanese Patent Laid-Open No. 2002-110686

本発明の課題は、基板面内の温度分布を均一にするように基板を保持できる簡易な基板保持装置を提供することである。   An object of the present invention is to provide a simple substrate holding device that can hold a substrate so that the temperature distribution in the substrate surface is uniform.

本発明は、以下のような解決手段により、前記課題を解決する。なお、理解を容易にするために、本発明の実施例に対応する符号を付して説明するが、これに限定されるものではない。
請求項１の発明は、基板（１０，１０−１）を熱処理する熱空間内に、前記基板（１０，１０−１）を保持するための基板保持装置であって、前記基板（１０，１０−１）の厚み部分（１０Ａ，１０−１Ａ）の一部に接触することにより、前記基板（１０，１０−１）を保持する保持部（２２，２２−１，２２−２）を備えた基板保持装置である。 The present invention solves the above problems by the following means. In addition, in order to make an understanding easy, although the code | symbol corresponding to the Example of this invention is attached | subjected and demonstrated, it is not limited to this.
The invention of claim 1 is a substrate holding apparatus for holding the substrate (10, 10-1) in a thermal space in which the substrate (10, 10-1) is heat-treated, the substrate (10, 10-1). -1) includes a holding portion (22, 22-1, 22-2) for holding the substrate (10, 10-1) by contacting a part of the thickness portion (10A, 10-1A). A substrate holding device.

請求項２の発明は、請求項１に記載の基板保持装置において、前記保持部（２２，２２−１，２２−２）は、前記基板（１０，１０−１）の厚み部分（１０Ａ，１０−１Ａ）の端部と接触する補助部（２３，２３−１，２３−２）を有すること、を特徴とする基板保持装置である。   According to a second aspect of the present invention, in the substrate holding apparatus according to the first aspect, the holding portion (22, 22-1, 22-2) is a thickness portion (10A, 10-1) of the substrate (10, 10-1). -1A) has a support portion (23, 23-1, 23-2) that comes into contact with the end portion.

請求項３の発明は、請求項２に記載の基板保持装置において、前記補助部（２３−２）は、前記熱空間内の熱量を貫流させる貫流部（２６）を有すること、を特徴とする基板保持装置である。   According to a third aspect of the present invention, in the substrate holding apparatus according to the second aspect, the auxiliary portion (23-2) includes a flow-through portion (26) through which the amount of heat in the thermal space flows. A substrate holding device.

請求項４の発明は、請求項２又は請求項３に記載の基板保持装置において、前記補助部（２３，２３−１，２３−２）は、溝部（２５，２５−１，２５−２）であって、前記溝部（２５，２５−１，２５−２）は、前記基板（１０，１０−１）の厚み部分（１０Ａ，１０−１Ａ）よりも幅の大きい底部（２４，２４−１，２４−２）を有すること、を特徴とする基板保持装置である。   According to a fourth aspect of the present invention, in the substrate holding apparatus according to the second or third aspect, the auxiliary portion (23, 23-1, 23-2) is a groove portion (25, 25-1, 25-2). The groove portions (25, 25-1, 25-2) are bottom portions (24, 24-1) that are wider than the thickness portions (10A, 10-1A) of the substrate (10, 10-1). , 24-2).

請求項５の発明は、請求項４に記載の基板保持装置において、前記底部（２４−２）は、前記基板（１０）の厚み部分（１０Ａ）との接触面積を小さくするための凹凸部（２７，２８）を有すること、を特徴とする基板保持装置である。   According to a fifth aspect of the present invention, in the substrate holding device according to the fourth aspect, the bottom portion (24-2) is an uneven portion for reducing a contact area with the thickness portion (10A) of the substrate (10). 27, 28).

請求項６の発明は、請求項１から請求項５までのいずれか１項に記載の基板保持装置において、前記保持部（２２，２２−１，２２−２）は、前記基板（１０，１０−１）の材質と同一材質を用いて形成されること、を特徴とする基板保持装置である。   According to a sixth aspect of the present invention, in the substrate holding device according to any one of the first to fifth aspects, the holding portion (22, 22-1, 22-2) includes the substrate (10, 10). The substrate holding device is characterized by being formed using the same material as the material of (-1).

請求項７の発明は、請求項１から請求項５までのいずれか１項に記載の基板保持装置において、前記保持部（２２，２２−１，２２−２）は、前記基板（１０，１０−１）の比熱よりも小さい比熱を有する材質を用いて形成されること、を特徴とする基板保持装置である。   According to a seventh aspect of the present invention, in the substrate holding apparatus according to any one of the first to fifth aspects, the holding portion (22, 22-1, 22-2) includes the substrate (10, 10). The substrate holding device is characterized by being formed using a material having a specific heat smaller than the specific heat of -1).

本発明の基板保持装置は、（１）基板の厚み部分の一部に接触することにより、基板を熱空間内に保持する保持部を備えたので、基板と保持部との接触面積を小さくでき、さらに、熱空間内の熱量が基板面内に略均一に伝達されるので、基板面内の温度分布を均一にすることができる。   The substrate holding apparatus according to the present invention includes (1) a holding portion that holds the substrate in the thermal space by contacting a part of the thickness portion of the substrate, so that the contact area between the substrate and the holding portion can be reduced. Furthermore, since the amount of heat in the heat space is transmitted substantially uniformly in the substrate surface, the temperature distribution in the substrate surface can be made uniform.

（２）保持部は、基板の厚み部分の端部と接触する補助部を有するので、基板が補助部により保持され、さらに、基板面内の端部付近と補助部との間には隙間が生じ、基板面内の端部付近に熱空間内の熱量を伝達することができる。 (2) Since the holding portion has an auxiliary portion that comes into contact with the end portion of the thickness portion of the substrate, the substrate is held by the auxiliary portion, and there is a gap between the vicinity of the end portion in the substrate surface and the auxiliary portion. As a result, the amount of heat in the heat space can be transmitted to the vicinity of the end portion in the substrate surface.

（３）補助部は、熱空間内の熱量を貫流させる貫流部を有するので、熱空間内の熱量は、補助部の周辺部を経由することなく、基板面内に迅速に伝達され、その結果、基板面内の温度分布を均一に保つことができると共に、保持部の体積を小さくできるので、保持部の熱容量を下げることができる。 (3) Since the auxiliary portion has a flow-through portion that allows the amount of heat in the heat space to flow through, the amount of heat in the heat space is quickly transferred into the substrate surface without passing through the peripheral portion of the auxiliary portion. Since the temperature distribution in the substrate surface can be kept uniform and the volume of the holding part can be reduced, the heat capacity of the holding part can be reduced.

（４）補助部は、基板の厚み部分よりも幅の大きい底部を有する溝部であるので、基板の厚み部分と底部とを接触させ、基板を確実に保持することができると共に、所望の搬送装置により基板を搬送する場合には、基板を保持部から確実に取り出すことができる。 (4) Since the auxiliary portion is a groove portion having a bottom portion that is wider than the thickness portion of the substrate, the thickness portion and the bottom portion of the substrate can be brought into contact with each other to reliably hold the substrate, and a desired transfer device When the substrate is transported by this, the substrate can be reliably taken out from the holding portion.

（５）底部は、基板の厚み部分との接触面積を小さくするための凹凸部を有するので、基板の厚み部分のうち底部と接触していない部分に、熱空間の熱量を伝達することができると共に、保持部の体積を小さくできるので、保持部の熱容量を下げることができる。 (5) Since the bottom portion has an uneven portion for reducing the contact area with the thickness portion of the substrate, the amount of heat in the heat space can be transmitted to the portion of the thickness portion of the substrate that is not in contact with the bottom portion. In addition, since the volume of the holding part can be reduced, the heat capacity of the holding part can be reduced.

（６）保持部は、基板の材質と同一材質を用いて形成されるので、保持部と基板とが接触している部分における熱伝導が小さくなり、基板面内の温度分布を均一にすることができる。 (6) Since the holding portion is formed using the same material as that of the substrate, the heat conduction in the portion where the holding portion and the substrate are in contact is reduced, and the temperature distribution in the substrate surface is made uniform. Can do.

（７）保持部は、基板の比熱よりも小さい比熱を有する材質を用いて形成されるので、保持部が基板に比べて熱しやすく冷めやすい性質を有し、基板の温度上昇や温度低下が保持部により妨げられることを防止できる。 (7) Since the holding portion is formed using a material having a specific heat smaller than that of the substrate, the holding portion has a property that it is easier to heat and cool than the substrate, and the temperature rise and temperature drop of the substrate are held. It is possible to prevent obstruction by the part.

本発明は、基板面内の温度分布を均一にするように基板を保持するという目的を、基板の厚み部分の一部に接触することにより、基板を熱空間内に保持する保持部を備えることによって実現する。   The present invention includes a holding unit that holds a substrate in a thermal space by contacting a part of the thickness portion of the substrate for the purpose of holding the substrate so that the temperature distribution in the substrate surface is uniform. Realized by.

以下、図面等を参照して、本発明の実施例をあげて、さらに詳しく説明する。
図１は、本発明による基板保持装置の実施例１を示す模式図である。なお、図中（ａ）は、基板保持装置を示す正面図であり、図中（ｂ）は、同じく側面図である。
基板保持装置（以下、保持具という）２０は、試料である基板（シリコンウエハ、ＧａＡｓウエハ、液晶用ガラス基板等）１０を熱処理する熱空間内（例えば、ＲＴＡ室内）に、基板１０を保持するための装置であって、保持部２２と、アーム状に形成された支持部２１等とを備えている。なお、ここでは、基板１０として角形のガラス基板を用いている。 Hereinafter, the present invention will be described in more detail with reference to the drawings and the like.
FIG. 1 is a schematic view showing a first embodiment of a substrate holding apparatus according to the present invention. In addition, (a) in the figure is a front view showing the substrate holding device, and (b) in the figure is also a side view.
A substrate holding device (hereinafter referred to as a holder) 20 holds the substrate 10 in a heat space (for example, an RTA chamber) in which a sample substrate (silicon wafer, GaAs wafer, liquid crystal glass substrate, etc.) 10 is heat-treated. And a holding portion 22 and a support portion 21 formed in an arm shape. Here, a square glass substrate is used as the substrate 10.

保持部２２は、基板１０の厚み部分１０Ａの一部に接触することにより、基板１０を保持する（詳細は、後述）。
角形の基板１０を保持する場合には、保持部２２は、例えば、少なくとも４つ（底辺に２つ、側辺に各１つ）設けられ、さらに、基板１０のたわみ等に対して影響の少ない位置に取り付けられる。なお、基板１０の辺の長さが１００ｍｍ増加するごとに、保持部２２の数を１つ増やすことが好ましい。
また、保持部２２の形状は、ここでは、円形状にしたが、これに限られず、基板１０の形状や材質等に応じて、適宜の形状（四角形、多角形）としてもよく、特に、基板１０の周辺部に沿うような形状であれば、保持部２２の強度を向上させることもできる。 The holding unit 22 holds the substrate 10 by contacting a part of the thickness portion 10A of the substrate 10 (details will be described later).
When holding the rectangular substrate 10, for example, at least four holding portions 22 (two on the bottom side and one on each side side) are provided, and further, there is little influence on the deflection or the like of the substrate 10. Attach to position. In addition, it is preferable to increase the number of the holding parts 22 by 1 every time the length of the side of the substrate 10 is increased by 100 mm.
In addition, the shape of the holding portion 22 is circular here, but is not limited thereto, and may be an appropriate shape (square, polygon) according to the shape, material, and the like of the substrate 10. The shape of the holding portion 22 can be improved as long as the shape is along the peripheral portion of the ten.

保持具２０は、熱空間内の加熱面（例えば、熱源であるヒーターが配置されている面）と基板１０との間に、支持部２１等が位置しないように形成されている。これにより、保持具２０は、基板１０の面内（以下、基板面内という）に影を作らないようにできる。
また、保持具２０は、基板１０と加熱面との距離が少なくとも３０ｍｍ以上となるように形成されている。 The holder 20 is formed so that the support portion 21 and the like are not positioned between a heating surface in the heat space (for example, a surface on which a heater as a heat source is disposed) and the substrate 10. Thereby, the holder 20 can prevent a shadow from being formed in the plane of the substrate 10 (hereinafter, referred to as “in the substrate plane”).
The holder 20 is formed so that the distance between the substrate 10 and the heating surface is at least 30 mm.

支持部２１は、例えば、石英から形成されており、基板１０と保持部２２とが接触するように、保持部２２を支持している。ここで、支持部２１の材料として石英を用いた理由について説明する。
支持部２１の材料として金属を用いた場合には、高温の雰囲気中で金属から金属蒸気等が放出され、基板１０を汚染させてしまう場合がある。また、樹脂関係の材料は、高温の雰囲気中で溶けてしまう場合がある。
一方、支持部２１の材料として、セラミック関係の材料（例えば、ＳｉＣ等）については使用することができるが、石英に比べて高価であり、さらに、破損したときに修復することができない。 The support part 21 is made of, for example, quartz, and supports the holding part 22 so that the substrate 10 and the holding part 22 are in contact with each other. Here, the reason why quartz is used as the material of the support portion 21 will be described.
When a metal is used as the material of the support portion 21, metal vapor or the like may be released from the metal in a high temperature atmosphere, and the substrate 10 may be contaminated. In addition, resin-related materials may melt in a high-temperature atmosphere.
On the other hand, a ceramic-related material (for example, SiC) can be used as the material of the support portion 21, but it is more expensive than quartz and cannot be repaired when it is damaged.

なお、石英を用いた場合であっても、例えば、透明石英をそのまま用いてしまうと、光の屈折等により適宜の箇所が加熱されてしまい、基板１０の基板面内に伝達される熱量に影響を及ぼすことが考えられる。このため、石英を用いる場合には、石英の形状にかかわらず透明な仕上げは避け、透明度のない仕上げ（例えば、表面をマット状に仕上げる等）とすることが好ましい。   Even when quartz is used, for example, if transparent quartz is used as it is, appropriate portions are heated due to light refraction and the like, which affects the amount of heat transferred to the substrate surface of the substrate 10. Can be considered. For this reason, when quartz is used, it is preferable to avoid a transparent finish regardless of the shape of the quartz, and to obtain a finish without transparency (for example, finishing the surface in a mat shape, etc.).

図２は、保持部２２を示す模式図である。なお、ここでは、円形状の保持部２２と基板１０とが接触した状態を示している。
保持部２２は、例えば、溝部２５を有している。溝部２５には、傾斜部２３と、底部２４とが形成されている。傾斜部２３は、基板１０の厚み部分１０Ａの端部と接触するものであって、基板１０の端面と同一角度又は同一角度以上をなすように傾斜している。
このため、傾斜部２３によれば、基板１０と傾斜部２３とが接触している場合に、基板１０の基板面内の端部付近と傾斜部２３との間に隙間が生じ、その結果、基板面内の端部付近に熱空間内の熱量を伝達することができる。 FIG. 2 is a schematic diagram showing the holding unit 22. Here, a state in which the circular holding portion 22 and the substrate 10 are in contact with each other is shown.
The holding part 22 has, for example, a groove part 25. In the groove portion 25, an inclined portion 23 and a bottom portion 24 are formed. The inclined portion 23 is in contact with the end portion of the thickness portion 10 </ b> A of the substrate 10, and is inclined so as to form the same angle or more than the same angle as the end surface of the substrate 10.
Therefore, according to the inclined portion 23, when the substrate 10 and the inclined portion 23 are in contact with each other, a gap is generated between the vicinity of the end portion in the substrate surface of the substrate 10 and the inclined portion 23, and as a result, The amount of heat in the heat space can be transmitted to the vicinity of the end in the substrate surface.

つぎに、溝部２５の角度（すなわち、傾斜部２３の水平に対する傾斜角）について説明する。
溝部２５の角度が３０°よりも小さい場合には、基板１０を熱処理するときに、基板１０の基板面内の端部付近にヒーターの赤外線が到達することを阻害してしまい、その結果、基板１０の温度を不均一にしてしまう。
一方、溝部２５の角度が１２０°よりも大きい場合には、基板１０を保持することが困難となってしまう。
したがって、溝部２５の角度は、水平から３０°〜１２０°の範囲が好ましい。 Next, the angle of the groove part 25 (that is, the inclination angle of the inclined part 23 with respect to the horizontal) will be described.
When the angle of the groove 25 is smaller than 30 °, when the substrate 10 is heat-treated, the infrared rays of the heater are prevented from reaching the vicinity of the end portion of the substrate 10 in the substrate surface, and as a result, the substrate The temperature of 10 is made non-uniform.
On the other hand, when the angle of the groove 25 is larger than 120 °, it becomes difficult to hold the substrate 10.
Therefore, the angle of the groove 25 is preferably in the range of 30 ° to 120 ° from the horizontal.

底部２４は、保持部２２の最深部に形成されており、基板１０の厚み部分１０Ａよりも幅が大きい。底部２４は、例えば、基板１０の厚み部分１０Ａに接触するように形成されており、その幅は適宜変化させてもよい。なお、底部２４の幅としては、基板１０の厚み（例えば、０．５〜１．０ｍｍ程度）に、０．３〜０．８ｍｍ程度を加えた幅とするのが好ましい。
このため、底部２４によれば、基板１０の厚み部分１０Ａと底部２４とを接触させるので、基板１０を確実に保持することができる。さらに、所望の搬送装置により基板１０を搬送する場合には、基板１０を保持部２２から確実に取り出すことができる。 The bottom portion 24 is formed at the deepest portion of the holding portion 22 and has a width larger than the thickness portion 10 </ b> A of the substrate 10. For example, the bottom 24 is formed so as to be in contact with the thickness portion 10A of the substrate 10, and the width thereof may be appropriately changed. The width of the bottom 24 is preferably a width obtained by adding about 0.3 to 0.8 mm to the thickness of the substrate 10 (for example, about 0.5 to 1.0 mm).
For this reason, according to the bottom part 24, since the thickness part 10A of the board | substrate 10 and the bottom part 24 are made to contact, the board | substrate 10 can be hold | maintained reliably. Further, when the substrate 10 is transferred by a desired transfer device, the substrate 10 can be reliably taken out from the holding unit 22.

なお、溝部２５の最深部が鋭角のままであっても基板１０の熱処理に問題がなく、さらに、基板１０の搬送や基板１０の保持についても問題が生じない場合には、底部２４を形成しなくてもよい。   If there is no problem in the heat treatment of the substrate 10 even if the deepest portion of the groove 25 remains at an acute angle, and there is no problem in the transportation of the substrate 10 and the holding of the substrate 10, the bottom 24 is formed. It does not have to be.

また、基板１０は、その厚みが０．５〜１．０ｍｍ程度と薄いので、保持部２２や支持部２１に比べて熱しやすく冷めやすい状態になっている。これに対して、保持部２２や支持部２１は厚みがあるので、熱伝導や熱容量が基板１０に比べて大きくなっている。
このため、基板１０の温度が上昇している場合であっても、保持部２２の温度が低くなり、保持部２２と接触している部分の温度上昇が妨げられてしまう。その結果、基板１０の基板面内の温度分布が不均一となり、均一な熱処理を行うことが困難となる。 Further, since the thickness of the substrate 10 is as thin as about 0.5 to 1.0 mm, it is easier to heat and cool than the holding portion 22 and the support portion 21. On the other hand, since the holding portion 22 and the support portion 21 are thick, heat conduction and heat capacity are larger than those of the substrate 10.
For this reason, even if the temperature of the board | substrate 10 is rising, the temperature of the holding | maintenance part 22 becomes low and the temperature rise of the part which is contacting the holding | maintenance part 22 will be prevented. As a result, the temperature distribution in the substrate surface of the substrate 10 becomes non-uniform, making it difficult to perform uniform heat treatment.

したがって、基板１０に直接接触する保持部２２は、熱処理する基板１０と同一材質、又は、同一物性材料であることが好ましい。具体的には、基板１０がシリコンウエハである場合には、単結晶シリコン、多結晶シリコン、ＳｉＣ等の黒体又は黒体に近い材料等を用いて、保持部２２を形成する。   Therefore, it is preferable that the holding portion 22 that is in direct contact with the substrate 10 is made of the same material or the same physical property material as the substrate 10 to be heat-treated. Specifically, when the substrate 10 is a silicon wafer, the holding portion 22 is formed using a black body such as single crystal silicon, polycrystalline silicon, SiC, or a material close to a black body.

基板１０の材質と同一材質を用いて、保持部２２を形成した場合には、保持部２２と基板１０とが接触している部分における熱伝導を小さくでき、基板１０の基板面内の温度分布を均一にすることができる。   When the holding part 22 is formed using the same material as the material of the substrate 10, the heat conduction in the part where the holding part 22 and the substrate 10 are in contact can be reduced, and the temperature distribution in the substrate surface of the substrate 10 can be reduced. Can be made uniform.

また、基板１０の比熱よりも小さい比熱を有する材質を用いて、保持部２２を形成した場合には、保持部２２が基板１０に比べて熱しやすく冷めやすい性質を有し、その結果、基板１０の温度上昇や温度低下が保持部２２によって妨げられることがない。   Further, when the holding portion 22 is formed using a material having a specific heat smaller than that of the substrate 10, the holding portion 22 has a property that it is easier to heat and cool than the substrate 10, and as a result, the substrate 10. The holding part 22 does not prevent the temperature rise or temperature drop.

したがって、保持具２０によれば、基板１０と保持部２２との接触面積を小さくでき、さらに、熱空間内の熱量（ヒーターからの赤外線）が基板１０の基板面内に略均一に伝達されるので、基板面内の温度分布を均一にすることができる。
また、保持具２０は、溝部２５が形成された保持部２２と、安価な石英により形成された支持部２１とからなるので、簡易な構造で熱空間内の熱量を有効に使用することができると共に、低コスト化を図ることができる。 Therefore, according to the holder 20, the contact area between the substrate 10 and the holding portion 22 can be reduced, and furthermore, the amount of heat in the heat space (infrared light from the heater) is transmitted substantially uniformly within the substrate surface of the substrate 10. Therefore, the temperature distribution in the substrate surface can be made uniform.
In addition, since the holder 20 includes the holding part 22 in which the groove part 25 is formed and the support part 21 made of inexpensive quartz, the amount of heat in the heat space can be effectively used with a simple structure. At the same time, the cost can be reduced.

図３は、本発明による基板保持装置の実施例２を示す模式図である。なお、以下に示す各実施例では、上述した保持具２２の各部材と同様な機能を果たす部材については同一符号又は末尾に統一した符号を付して、機能等の説明を適宜省略する。
保持具２０−１は、例えば、保持具２０と比べると、円形以外の別の形状（ここでは、直方体状）を有する保持部２２−１により、基板１０を保持している点が異なる。 FIG. 3 is a schematic diagram showing Example 2 of the substrate holding apparatus according to the present invention. In each example shown below, members having the same functions as those of the members of the holder 22 described above are denoted by the same reference numerals or unified reference numerals at the end, and descriptions of functions and the like are omitted as appropriate.
For example, the holder 20-1 is different from the holder 20 in that the substrate 10 is held by a holder 22-1 having another shape other than a circle (here, a rectangular parallelepiped shape).

図４は、保持部２２−１を示す説明図である。
保持部２２−１は、例えば、溝部２５−１を有する。溝部２５−１には、上述したように、基板１０の厚み部分１０Ａと接触する底部２４−１と、基板１０の端面と同一角度又は同一角度以上をなすように傾斜している傾斜部２３−１とが形成されている。 FIG. 4 is an explanatory diagram showing the holding unit 22-1.
The holding part 22-1 has, for example, a groove part 25-1. As described above, in the groove portion 25-1, the bottom portion 24-1 that is in contact with the thickness portion 10A of the substrate 10 and the inclined portion 23- that is inclined so as to form the same angle or more than the same angle as the end face of the substrate 10. 1 is formed.

図５は、保持部２２−１の変形例を示す説明図である。
保持部２２−２は、保持部２２−１と比べると、熱空間内の熱量を貫流させる貫流部２６を有する傾斜部２３−２と、凹凸形状の底部２４−２とからなる溝部２５−２を備えた点が異なる。
貫流部２６は、例えば、基板１０の厚み方向と略同一方向に貫通した貫通孔であって、傾斜部２３−２に複数形成されている。このため、熱空間内の熱量は、傾斜部２３−２の周辺部を経由することなく、貫流部２６を介して、基板１０の基板面内に伝達される。
したがって、貫流部２６によれば、基板１０の基板面内であって溝部２５−２に入り込んでいる部分に、熱空間内の熱量を迅速に伝達することができる。 FIG. 5 is an explanatory diagram showing a modification of the holding unit 22-1.
Compared with the holding part 22-1, the holding part 22-2 is a groove part 25-2 composed of an inclined part 23-2 having a flow-through part 26 for allowing the amount of heat in the heat space to flow therethrough and an uneven bottom part 24-2. Is different.
The through-flow portion 26 is, for example, a through-hole penetrating in the substantially same direction as the thickness direction of the substrate 10, and a plurality of the through-flow portions 26 are formed in the inclined portion 23-2. For this reason, the amount of heat in the heat space is transmitted to the substrate surface of the substrate 10 through the through-flow portion 26 without passing through the peripheral portion of the inclined portion 23-2.
Therefore, according to the flow-through portion 26, the amount of heat in the heat space can be quickly transmitted to the portion of the substrate 10 in the substrate surface and entering the groove portion 25-2.

また、底部２４−２は、図示のように、凹凸形状であって、貫流部２６の下方には凹部２７が形成され、貫流部２６の間には凸部２８が形成されている。このため、基板１０の厚み部分１０Ａは、凹部２７とは接触せずに凸部２８と接触することになる。
この底部２４−２によれば、基板１０の厚み部分１０Ａとの接触面積を小さくすることができ、基板１０の厚み部分１０Ａのうち底部２４−２と接触していない部分に、熱空間の熱量を伝達することができる。 Further, as shown in the drawing, the bottom portion 24-2 has an uneven shape, and a concave portion 27 is formed below the through-flow portion 26, and a convex portion 28 is formed between the through-flow portions 26. For this reason, the thickness portion 10 </ b> A of the substrate 10 comes into contact with the convex portion 28 without contacting the concave portion 27.
According to this bottom portion 24-2, the contact area with the thickness portion 10A of the substrate 10 can be reduced, and the amount of heat in the heat space can be reduced in the portion of the thickness portion 10A of the substrate 10 that is not in contact with the bottom portion 24-2. Can be transmitted.

したがって、保持部２２−２によれば、基板１０の基板面内の温度分布をより均一に保つことができ、さらに、保持部２２−２の体積を小さくすることができるので、保持部２２−２の熱容量を下げることができる。   Therefore, according to the holding unit 22-2, the temperature distribution in the substrate surface of the substrate 10 can be kept more uniform, and the volume of the holding unit 22-2 can be reduced. 2 heat capacity can be reduced.

図６は、本発明による基板保持装置の実施例３を示す模式図である。
保持具２０−２は、例えば、保持具２０と比べると、円形の基板１０−１を保持部２２で保持している点が異なる。
保持部２２は、基板１０−１の厚み部分１０Ａ−１の一部に接触することにより、円形の基板１０−１を保持することができる。また、基板１０−１は、３つの保持部２２によって保持したが、例えば、４つ以上の保持部２２によって保持してもよい。なお、円形の基板１０−１を保持するために、円形の保持部２２を用いたが、円形以外の保持部２２−１，２２−２を用いてもよい。 FIG. 6 is a schematic view showing Example 3 of the substrate holding apparatus according to the present invention.
For example, the holder 20-2 is different from the holder 20 in that the circular substrate 10-1 is held by the holder 22.
The holding part 22 can hold the circular substrate 10-1 by contacting a part of the thickness portion 10A-1 of the substrate 10-1. Moreover, although the board | substrate 10-1 was hold | maintained with the three holding | maintenance parts 22, you may hold | maintain with four or more holding | maintenance parts 22, for example. In addition, although the circular holding | maintenance part 22 was used in order to hold | maintain the circular board | substrate 10-1, you may use holding | maintenance parts 22-1 and 22-2 other than circular.

（変形例）
以上説明した実施例に限定されることなく、種々の変形や変更が可能であって、それらも本発明の均等の範囲内である。
（１）保持部２２−２では、傾斜部２３−２に複数の貫流部２６を設けるようにしたが、これに限られず、保持部２２，２２−１の傾斜部２３，２３−１に貫流部２６を設けるようにしてもよい。
（２）貫流部２６は、熱空間内の熱量を基板１０の基板面内に貫流することができるのであれば、貫通孔に限らず、メッシュを形成したり、傾斜部２３−２を切り欠く等、適宜の形状としてもよい。
（３）保持部２２，２２−１，２２−２は、溝形状としたが、基板１０，１０−１を保持できるのであれば、傾斜部２３，２３−１，２３−２を片側にのみ形成するようにしてもよい。 (Modification)
The present invention is not limited to the embodiments described above, and various modifications and changes are possible, and these are also within the equivalent scope of the present invention.
(1) In the holding portion 22-2, the plurality of flow-through portions 26 are provided in the inclined portion 23-2. However, the present invention is not limited to this, and the flow passes through the inclined portions 23 and 23-1 of the holding portions 22 and 22-1. The portion 26 may be provided.
(2) The through-flow portion 26 is not limited to the through-hole, and may form a mesh or cut out the inclined portion 23-2 as long as the amount of heat in the heat space can flow into the substrate surface of the substrate 10. For example, an appropriate shape may be used.
(3) The holding portions 22, 22-1, and 22-2 have groove shapes, but if the substrates 10 and 10-1 can be held, the inclined portions 23, 23-1, and 23-2 are only on one side. You may make it form.

本発明による基板保持装置の実施例１を示す模式図である。It is a schematic diagram which shows Example 1 of the board | substrate holding apparatus by this invention. 保持部２２を示す模式図である。3 is a schematic diagram showing a holding unit 22. FIG. 本発明による基板保持装置の実施例２を示す模式図である。It is a schematic diagram which shows Example 2 of the substrate holding device by this invention. 保持部２２−１を示す説明図である。It is explanatory drawing which shows the holding | maintenance part 22-1. 保持部２２−１の変形例を示す説明図である。It is explanatory drawing which shows the modification of the holding | maintenance part 22-1. 本発明による基板保持装置の実施例３を示す模式図である。It is a schematic diagram which shows Example 3 of the substrate holding device by this invention. 一般的なＲＴＰ装置を示す概略図である。It is the schematic which shows a general RTP apparatus. ＲＴＰ装置に設けられたＲＴＡ室を示す模式図である。It is a schematic diagram which shows the RTA room provided in the RTP apparatus. 図８で示した基板１０及び基板支持ピン１３２の拡大図である。It is an enlarged view of the board | substrate 10 and the board | substrate support pin 132 which were shown in FIG. 基板１０をＲＴＡ室１３０で保持する他の例を示す図である。FIG. 6 is a view showing another example in which the substrate 10 is held in the RTA chamber 130.

符号の説明Explanation of symbols

１０ 基板
２０ 保持具
２１ 支持部
２２ 保持部
２３ 傾斜部
２４ 底部
２５ 溝部
２６ 貫流部
２７ 凹部
２８ 凸部
１００ ＲＴＰ装置
１３０ ＲＴＡ室

DESCRIPTION OF SYMBOLS 10 Board | substrate 20 Holder 21 Support part 22 Holding part 23 Inclination part 24 Bottom part 25 Groove part 26 Flow-through part 27 Concave part 28 Convex part 100 RTP apparatus 130 RTA chamber

Claims (7)

基板を熱処理する熱空間内に、前記基板を保持するための基板保持装置であって、
前記基板の厚み部分の一部に接触することにより、前記基板を保持する保持部を備えた基板保持装置。 A substrate holding apparatus for holding the substrate in a thermal space for heat-treating the substrate,
A substrate holding apparatus comprising a holding unit for holding the substrate by contacting a part of the thickness portion of the substrate. 請求項１に記載の基板保持装置において、
前記保持部は、前記基板の厚み部分の端部と接触する補助部を有すること、
を特徴とする基板保持装置。 The substrate holding apparatus according to claim 1,
The holding part has an auxiliary part that comes into contact with an end part of the thickness part of the substrate;
A substrate holding device. 請求項２に記載の基板保持装置において、
前記補助部は、前記熱空間内の熱量を貫流させる貫流部を有すること、
を特徴とする基板保持装置。 The substrate holding apparatus according to claim 2, wherein
The auxiliary portion has a flow-through portion through which the amount of heat in the heat space flows.
A substrate holding device. 請求項２又は請求項３に記載の基板保持装置において、
前記補助部は、溝部であって、
前記溝部は、前記基板の厚み部分よりも幅の大きい底部を有すること、
を特徴とする基板保持装置。 In the substrate holding device according to claim 2 or 3,
The auxiliary part is a groove part,
The groove has a bottom that is wider than the thickness of the substrate;
A substrate holding device. 請求項４に記載の基板保持装置において、
前記底部は、前記基板の厚み部分との接触面積を小さくするための凹凸部を有すること、
を特徴とする基板保持装置。 The substrate holding apparatus according to claim 4, wherein
The bottom portion has an uneven portion for reducing a contact area with a thickness portion of the substrate;
A substrate holding device. 請求項１から請求項５までのいずれか１項に記載の基板保持装置において、
前記保持部は、前記基板の材質と同一材質を用いて形成されること、
を特徴とする基板保持装置。 In the substrate holding device according to any one of claims 1 to 5,
The holding portion is formed using the same material as the substrate;
A substrate holding device. 請求項１から請求項５までのいずれか１項に記載の基板保持装置において、
前記保持部は、前記基板の比熱よりも小さい比熱を有する材質を用いて形成されること、
を特徴とする基板保持装置。
In the substrate holding device according to any one of claims 1 to 5,
The holding part is formed using a material having a specific heat smaller than that of the substrate;
A substrate holding device.
JP2004061580A 2004-03-05 2004-03-05 Substrate holding device Ceased JP2005252042A (en)

Priority Applications (3)

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JP2004061580A JP2005252042A (en) 2004-03-05 2004-03-05 Substrate holding device
TW093108080A TW200531130A (en) 2004-03-05 2004-03-25 Substrate holding device
KR1020040023453A KR20050089719A (en) 2004-03-05 2004-04-06 Substrate holding apparatus

Applications Claiming Priority (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251995A (en) * 2007-03-30 2008-10-16 Mitsui Eng & Shipbuild Co Ltd Temperature information acquiring device and heating system
JP2013089820A (en) * 2011-10-19 2013-05-13 Shin Etsu Chem Co Ltd Thermal processing boat
JP2016154180A (en) * 2015-02-20 2016-08-25 株式会社島津製作所 Substrate supporter
CN109957765A (en) * 2017-12-26 2019-07-02 佳能特机株式会社 Substrate holder and film formation device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008251995A (en) * 2007-03-30 2008-10-16 Mitsui Eng & Shipbuild Co Ltd Temperature information acquiring device and heating system
JP2013089820A (en) * 2011-10-19 2013-05-13 Shin Etsu Chem Co Ltd Thermal processing boat
JP2016154180A (en) * 2015-02-20 2016-08-25 株式会社島津製作所 Substrate supporter
CN109957765A (en) * 2017-12-26 2019-07-02 佳能特机株式会社 Substrate holder and film formation device
CN109957765B (en) * 2017-12-26 2023-09-01 佳能特机株式会社 Substrate holder and film forming apparatus

Also Published As

Publication number Publication date
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KR20050089719A (en) 2005-09-08

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