CN106409730A - Non-contact wafer annealing device and method - Google Patents
Non-contact wafer annealing device and method Download PDFInfo
- Publication number
- CN106409730A CN106409730A CN201610937787.3A CN201610937787A CN106409730A CN 106409730 A CN106409730 A CN 106409730A CN 201610937787 A CN201610937787 A CN 201610937787A CN 106409730 A CN106409730 A CN 106409730A
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- Prior art keywords
- wafer
- gas
- passed
- annealing
- contactless
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- 238000000137 annealing Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000523 sample Substances 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000011148 porous material Substances 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 238000009529 body temperature measurement Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 62
- 239000013078 crystal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention discloses a non-contact wafer annealing device and method. The device comprises a wafer, an air floating platform deck, a light source, an infrared temperature measurement probe and a controller. A plurality of air holes are uniformly distributed on the air floating platform deck, air is pumped in from the air holes to form an air cushion for supporting the wafer; the light source is arranged right above the wafer, and the wafer is heated through radiation; the infrared temperature measurement probe is arranged at the right below the air floating platform deck, and the temperature of the wafer is measured through the temperature measurement hole arranged at the diameter of the air floating platform deck; and the controller is connected with the infrared temperature measurement probe. The non-contact wafer annealing device and method are simple to perform, the annealing temperature is uniform, the measurement precision is high, and the non-contact wafer annealing device and method can avoid damaging the wafer and perform annealing of the back surface of the wafer while the fashioned front surface and the edges of the wafer do not damaged and can realize the automation operation.
Description
Technical field
The present invention relates to a kind of wafer annealing device and its method for annealing, more particularly to a kind of contactless wafer annealing
Device and its method for annealing.
Background technology
With scientific and technological progress, semiconductor chip has been applied to the every field of social life, and chip is generally by wafer
Make, all silicon in this way of described wafer or other wafers of semiconductor material.In manufacture process, according to different manufacturing process, for example
Alloy, oxidation or nitridation, ion implanting annealing, dopant activation and gettering etc., generally require wafer is carried out with multiple step anneal heat
Process, so that the damage of crystal is repaired, and eliminate dislocation and grown-in defects.
Prior art is generally placed on wafer on the quartzy frame of technique intracavity, and is heated brilliant with the radiation of light source of high intensity
Circle.Light source is typically the fluorescent tube of array arrangement, and different fluorescent tubes irradiate the different position of crystal column surface.Thermocouple measurement is usually used
The temperature of shady face, the contact type measurement of thermocouple clearly has limitation, crystal column surface may be caused to damage, and survey
Accuracy of measurement is general.Quartzy frame and wafer contacts can affect the transmission of crystal column surface heat；Irradiation due to different fluorescent tubes has difference
The opposite sex, if the irradiation centralized Control to fluorescent tube, this will result in the uneven of wafer annealing temperature.In some techniques, wafer
Front produced integrated circuit, also need to be annealed in its back side, then the front of wafer is not suitable for and quartz contact,
If contact, easily cause the damage of front-side integrated circuit and wafer heating-up temperature is uneven；If only using bracket support crystal round fringes,
Carry out back side heating anneal, then because thermal stress can cause wafer distortion, especially large scale wafer again in annealing process.
Annealing temperature is uneven, and crystal column surface damage phenomenon can directly affect the electric property of semiconductor chip, so, such as
What avoids the appearance of the problems referred to above is that association area is urgently to be resolved hurrily at present.
Content of the invention
For the drawbacks described above of prior art, it is an object of the invention to provide a kind of easy and simple to handle, annealing temperature is uniform,
Certainty of measurement is high, it can be avoided that wafer damages and while not damaging wafer frontside and edge, wafer rear can be moved back
The supermatic contactless wafer annealing device of fire and its method.
The present invention provides a kind of contactless wafer annealing device, visits including wafer, air supporting microscope carrier, light source, infrared measurement of temperature
Head and controller, wherein：
Air supporting microscope carrier uniformly gathers multiple pores, and gas is passed through from described pore, forms air cushion, for supporting described crystalline substance
Circle, arranges thermometer hole at described air supporting microscope carrier diameter；
Light source is arranged on the surface of wafer, by radiation, wafer is heated；
Infrared temperature probe is arranged on immediately below air supporting microscope carrier, by described thermometric hole measurement wafer temperature；
Controller is connected with described infrared temperature probe, controls light irradiation power and then controls wafer temperature.
One kind carries out method for annealing with contactless wafer annealing device, comprises the following steps：
Air supporting microscope carrier is passed through first gas, forms air cushion, then wafer is placed on air cushion；
It is passed through second gas into device airtight chamber is purged；
Purging stops being passed through second gas after finishing, and starts to be passed through third gas, opens light source simultaneously and is heated, infrared
Temperature probe infrared light passes through thermometric hole measurement wafer shady face temperature, and controller is according to the measurement data control of infrared temperature probe
Light irradiation power processed, and then control heating rate；
Heat up and stop heating after a period of time, stop being passed through third gas, be changed to be passed through second gas and airtight chamber is entered
Row purging cooling, cools to taking-up wafer when 500 DEG C, continues cooling at room temperature, be cooled to room temperature, then device shutdown, stops
Only all gas are passed through.
With respect to the annealing device of prior art, the contactless annealing device of the present invention and its method for annealing have as follows
Technique effect：
1) the contactless wafer annealing device of the present invention, using air supporting microscope carrier make wafer suspend annealing, can reduce because
Contact the situation touching and causing wafer damage.
2) the contactless wafer annealing device of the present invention, makes wafer suspend using air supporting microscope carrier and anneals, if wafer frontside
Molding, it is also possible to anneal to the back side in the case of not damaging wafer frontside, homogeneous heating.
3) the contactless wafer annealing device of the present invention, right in the case of not contacting wafer using infrared temperature probe
Wafer measures, it is to avoid crystal column surface caused damage, and certainty of measurement is high, detection rates are fast.
4) the contactless wafer annealing device of the present invention, carries out Power Control using controller to temperature measuring device, makes crystalline substance
Circle annealing temperature is more uniform.
5) annealed using wafer annealing device of the present invention, easy and simple to handle, adapt to multiple annealing process.
6) annealed using wafer annealing device of the present invention, be can achieve supermatic line production.
Brief description
Fig. 1 is the present invention contactless wafer annealing device structural representation.
Fig. 2 is air supporting stage structure schematic diagram in the present invention contactless wafer annealing device.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes：
As shown in Figure 1, 2, a kind of contactless wafer annealing device, including wafer 2, air supporting microscope carrier 3, light source, infrared survey
Temperature probe 5 and controller 6, wherein：
Light source is array arrangement fluorescent tube 1, and different fluorescent tubes 1 irradiate the diverse location on wafer 2 surface；
Air supporting microscope carrier 3 section is circle, its middle setting thermometer hole 4, and it is straight that described thermometer hole 4 is located at described air supporting microscope carrier 3
At path position, and the length of thermometer hole 4 is more than or equal to the diameter length of wafer 2.The width of thermometer hole 4 is according to infrared temperature probe
5 size determines, and more narrow better, but can not block infrared measurement of temperature.The porous ceramicss of the preferred high-quality of air supporting microscope carrier 3, thereon
Uniformly gather multiple pores, and gas sprays from pore and forms air cushion, for supporting wafer 2, so that wafer 2 is suspended in device, real
Existing zero frictionally heats annealing.The gas being wherein passed through is argon, can also need to select nitrogen according to technique, hydrogen etc..
Fluorescent tube 1 is arranged on the surface of wafer 2, by heat radiation, wafer 2 is heated；
Infrared temperature probe 5 array arrangement is arranged on immediately below air supporting microscope carrier 3, measures wafer 2 shady face by thermometer hole 4
Temperature.Controller 6 is connected with infrared temperature probe 5, and controller 6 controls according to the measurement data that infrared temperature probe 5 transmits
The irradiation power of fluorescent tube 1, carries out uniformity heating to wafer 2.Wherein, a region of a fluorescent tube 1 heating wafer 2, one
Infrared temperature probe 5 corresponds to a fluorescent tube 1 and monitors the temperature of this fluorescent tube 1 heating region.
A kind of method annealed with contactless wafer annealing device, comprises the following steps：
Before wafer 2 is put into, air supporting microscope carrier 3 is passed through room temperature argon, forms air cushion, then wafer 2 is placed on air cushion；
It is passed through 15000sccm nitrogen to device and 1min purging is carried out to airtight chamber, wherein, airtight airtight chamber divides at two ends
Lian Jie not air inlet and gas outlet；
Purging stops being passed through nitrogen, by 1 after finishing：1 ratio, is passed through argon and hydrogen with 2600sccm flow, opens simultaneously
Open fluorescent tube 1 to begin to warm up, control 40 DEG C/min of heating rate, be warmed up to 1100 DEG C, keep 1 hour, period, infrared temperature probe
5 measure wafer 2 shady face temperature by thermometer hole 4, and controller controls fluorescent tube 1 spoke according to the measurement data of infrared temperature probe 5
According to power, and then control heating rate；
Stop heating, stop being passed through argon and hydrogen, be changed to be passed through 15000sccm nitrogen and airtight chamber is carried out with purging fall
Temperature, cools to and adopts mechanical hand to take out wafer 2 when 500 DEG C, and be cooled to room temperature at room temperature；Device shutdown afterwards, stops institute
Gas is had to be passed through.
In sum, the air supporting microscope carrier of the present invention contactless wafer annealing device and infrared temperature probe can reach
The temperature homogeneity of wafer annealing, reduces crystal column surface damaged condition；Annealed with this device, simple to operate, can be real
Existing increasingly automated line production.
Above in association with accompanying drawing, the preferred embodiment of the present invention is described, but the invention is not limited in above-mentioned concrete
Embodiment, above-mentioned specific embodiment is only schematically, is not restricted, those of ordinary skill in the art
Under the enlightenment of the present invention, in the case of without departing from present inventive concept and scope of the claimed protection, can also make very
Multi-form, these belong within the scope of the present invention.
Claims (10)
1. a kind of contactless wafer annealing device it is characterised in that：Including wafer, air supporting microscope carrier, light source, infrared temperature probe
And controller, wherein：
Described air supporting microscope carrier uniformly gathers multiple pores, and gas is passed through from described pore, forms air cushion, for supporting described crystalline substance
Circle, arranges thermometer hole at described air supporting microscope carrier diameter；
Described light source is arranged on the surface of wafer, by radiation, wafer is heated；
Described infrared temperature probe is arranged on immediately below air supporting microscope carrier, by described thermometric hole measurement wafer temperature；
Described controller is connected with described infrared temperature probe, controls light irradiation power and then controls wafer temperature.
2. contactless wafer annealing device according to claim 1 it is characterised in that：Described light source and described infrared survey
Temperature probe is array arrangement, and a light source heats a region of wafer, and an infrared temperature probe corresponds to a light source simultaneously
Monitor the temperature of described light source heating region.
3. contactless wafer annealing device according to claim 1 it is characterised in that：Described thermometric hole length be more than etc.
In diameter wafer.
4. contactless wafer annealing device according to claim 1 it is characterised in that：Described infrared temperature probe is infrared
Light passes through thermometric hole measurement wafer shady face temperature.
5. contactless wafer annealing device according to claim 1 it is characterised in that：Described air supporting microscope carrier is porous pottery
Porcelain.
6. a kind of method that contactless wafer annealing device according to claim 1 is annealed, comprises the following steps：
Air supporting microscope carrier is passed through first gas, forms air cushion, then wafer is placed on air cushion；
It is passed through second gas into device airtight chamber is purged；
Purging stops being passed through second gas after finishing, and starts to be passed through third gas, opens light source simultaneously and is heated, infrared measurement of temperature
Probe passes through thermometric hole measurement wafer shady face temperature, and controller controls light irradiation according to the measurement data of infrared temperature probe
Power, and then control heating rate；
Heat up and stop heating after a period of time, stop being passed through third gas, be changed to be passed through second gas and airtight chamber is blown
Sweep cooling, cool to taking-up wafer when 500 DEG C, continue cooling at room temperature, be cooled to room temperature, then device shutdown, stop institute
Gas is had to be passed through.
7. contactless wafer method for annealing according to claim 6 it is characterised in that：Described heating rate be 40 DEG C/
Min, is warmed up to 1100 DEG C, stops heating after keeping 1 hour.
8. contactless wafer method for annealing according to claim 6 it is characterised in that：Described third gas with
The flow of 2600sccm is passed through airtight chamber.
9. contactless wafer method for annealing according to claim 6 it is characterised in that：After stopping heating, described second
Gas is passed through airtight chamber with the flow of 15000sccm.
10. contactless wafer method for annealing according to claim 6 it is characterised in that：Described first gas are room temperature
Argon, second gas are nitrogen, argon and hydrogen that third gas are.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610937787.3A CN106409730B (en) | 2016-10-25 | 2016-10-25 | Non-contact wafer annealing device and annealing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610937787.3A CN106409730B (en) | 2016-10-25 | 2016-10-25 | Non-contact wafer annealing device and annealing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409730A true CN106409730A (en) | 2017-02-15 |
| CN106409730B CN106409730B (en) | 2024-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610937787.3A Active CN106409730B (en) | 2016-10-25 | 2016-10-25 | Non-contact wafer annealing device and annealing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108913851A (en) * | 2018-03-29 | 2018-11-30 | 温州市强龙铜业有限公司 | A kind of bell-type furnace |
| CN109283135A (en) * | 2017-07-21 | 2019-01-29 | 合肥欣奕华智能机器有限公司 | A kind of display panel testing |
| CN109724712A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Temperature-detecting device and its manufacturing method and laser surface annealing device |
| CN111063637A (en) * | 2019-12-06 | 2020-04-24 | Tcl华星光电技术有限公司 | Heating device and control method thereof |
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| US20050017310A1 (en) * | 2003-06-12 | 2005-01-27 | Granneman Ernst H.A. | Methods of forming silicide films in semiconductor devices |
| CN102576676A (en) * | 2009-10-09 | 2012-07-11 | 应用材料公司 | Apparatus and method for improved control of heating and cooling of substrates |
| US20150181649A1 (en) * | 2012-05-24 | 2015-06-25 | Ap Systems Inc. | Apparatus for substrate treatment and method for operating the same |
| CN206210757U (en) * | 2016-10-25 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | Contactless wafer annealing device |
-
2016
- 2016-10-25 CN CN201610937787.3A patent/CN106409730B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050017310A1 (en) * | 2003-06-12 | 2005-01-27 | Granneman Ernst H.A. | Methods of forming silicide films in semiconductor devices |
| CN102576676A (en) * | 2009-10-09 | 2012-07-11 | 应用材料公司 | Apparatus and method for improved control of heating and cooling of substrates |
| US20150181649A1 (en) * | 2012-05-24 | 2015-06-25 | Ap Systems Inc. | Apparatus for substrate treatment and method for operating the same |
| CN206210757U (en) * | 2016-10-25 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | Contactless wafer annealing device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109283135A (en) * | 2017-07-21 | 2019-01-29 | 合肥欣奕华智能机器有限公司 | A kind of display panel testing |
| CN109283135B (en) * | 2017-07-21 | 2021-06-08 | 合肥欣奕华智能机器有限公司 | Display panel detection device |
| CN109724712A (en) * | 2017-10-31 | 2019-05-07 | 上海微电子装备（集团）股份有限公司 | Temperature-detecting device and its manufacturing method and laser surface annealing device |
| CN109724712B (en) * | 2017-10-31 | 2021-04-30 | 上海微电子装备（集团）股份有限公司 | Temperature detection device, manufacturing method thereof and laser surface annealing equipment |
| CN108913851A (en) * | 2018-03-29 | 2018-11-30 | 温州市强龙铜业有限公司 | A kind of bell-type furnace |
| CN111063637A (en) * | 2019-12-06 | 2020-04-24 | Tcl华星光电技术有限公司 | Heating device and control method thereof |
| CN111063637B (en) * | 2019-12-06 | 2022-07-12 | Tcl华星光电技术有限公司 | Heating device and control method thereof |
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| CN106409730B (en) | 2024-06-04 |
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