JP2013008941A - 発光素子モジュール - Google Patents
発光素子モジュール Download PDFInfo
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- JP2013008941A JP2013008941A JP2012051938A JP2012051938A JP2013008941A JP 2013008941 A JP2013008941 A JP 2013008941A JP 2012051938 A JP2012051938 A JP 2012051938A JP 2012051938 A JP2012051938 A JP 2012051938A JP 2013008941 A JP2013008941 A JP 2013008941A
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L33/50—Wavelength conversion elements
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
【解決手段】本発明の一実施例は、互いに電気的に分離された第1のリードフレーム及び第2のリードフレームと、第1のリードフレーム及び第2のリードフレームとそれぞれ電気的に連結された発光素子と、前記発光素子の周辺領域に配置されたダムと、前記発光素子を取り囲み、前記ダムの内側領域に配置された樹脂層と、及び前記ダムの周辺領域に配置され、少なくとも一側面が傾斜面に形成された反射部材とを備える発光素子モジュールを提供する。
【選択図】図1
Description
100 発光素子モジュール
105 ワイヤ
110 導電性接着層
120 放熱層
130 絶縁層
160 PSR層
170 ダム
180 樹脂層
185 蛍光体
190 反射部材
195 固定部材
Claims (25)
- 互いに電気的に分離された第1のリードフレーム及び第2のリードフレームと、
前記第1のリードフレーム及び第2のリードフレームとそれぞれ電気的に連結された発光素子と、
前記発光素子の周辺領域に配置されたダムと、
前記発光素子を取り囲み、前記ダムの内側領域に配置された樹脂層と、
前記ダムの周辺領域に配置され、少なくとも一側面が傾斜面に形成された反射部材と
を備える発光素子モジュール。 - 前記ダムは、前記発光素子の周囲に円状又は楕円状に配置されている、請求項1に記載の発光素子モジュール。
- 前記傾斜面の水平断面は前記発光素子の周囲で曲面をなす、請求項1又は2に記載の発光素子モジュール。
- 前記ダムの高さは40〜60マイクロメートルである、請求項1又は2に記載の発光素子モジュール。
- 前記ダムの上部に少なくとも一つの段差を有する、請求項1乃至4のうちのいずれかに記載の発光素子モジュール。
- 前記段差に前記樹脂層の縁部が固定されている、請求項5に記載の発光素子モジュール。
- 前記ダムの上部に溝が形成され、前記溝に前記樹脂層の縁部が固定されている、請求項5に記載の発光素子モジュール。
- 前記第1のリードフレームと第2のリードフレームとの間にPSR層をさらに備える、請求項1乃至7のうちのいずれかに記載の発光素子モジュール。
- 前記反射部材は前記PSR層上に配置され、前記反射部材と前記PSR層は固定部材で結合されている、請求項8に記載の発光素子モジュール。
- 前記固定部材は両面接着剤又は両面接着テープである、請求項9に記載の発光素子モジュール。
- 前記ダムは、前記PSR層上に印刷されて形成されている、請求項9又は10に記載の発光素子モジュール。
- 前記第1のリードフレーム及び第2のリードフレームのうちの少なくとも一つは、絶縁層を介して放熱層と接触する、請求項1乃至11のうちのいずれかに記載の発光素子モジュール。
- 前記反射部材の傾斜面の最上端の幅は、前記ダムに固定された樹脂層の幅の1.5〜2倍である、請求項1乃至12のうちのいずれかに記載の発光素子モジュール。
- パッケージ本体に配置され、互いに電気的に分離された第1のリードフレーム及び第2のリードフレームと、
前記第1のリードフレーム及び第2のリードフレームとそれぞれ電気的に連結された発光素子と、
前記発光素子を取り囲み、パッケージ本体上に配置された樹脂層と
を備え、
前記パッケージ本体と前記樹脂層との結合領域の縁部に密封材が配置されている発光素子モジュール。 - 前記樹脂層は、前記発光素子から放出される第1の波長領域の光を第2の波長領域の光に変更する第1の樹脂層と、前記第1の樹脂層の周囲に配置され、前記第1の樹脂層から放出される光の経路を変更する第2の樹脂層とを有する、請求項14に記載の発光素子モジュール。
- 前記第1の樹脂層の高さは前記パッケージ本体の高さと同一である、請求項15に記載の発光素子モジュール。
- 前記密封材は、前記パッケージ本体上に配置され、プライマー組成物を含む、請求項14乃至16のうちのいずれかに記載の発光素子モジュール。
- 前記本体上にダムが形成されている、請求項14〜17のうちのいずれかに記載の発光素子モジュール。
- 前記ダムの下側の幅が上側の幅より広い、請求項18に記載の発光素子モジュール。
- 前記ダムの水平方向の断面が台形である、請求項18に記載の発光素子モジュール。
- 前記ダムの垂直方向の断面がV字状又は瓶状である、請求項18に記載の発光素子モジュール。
- 前記ダムにプライマー組成物がコーティングされている、請求項18に記載の発光素子モジュール。
- 前記樹脂層の縁部が前記ダムに挿入されて固定されている、請求項18乃至22のうちのいずれかに記載の発光素子モジュール。
- 前記ダムは、前記樹脂層の縁部と隣接して少なくとも3ヶ所に形成されている、請求項23に記載の発光素子モジュール。
- 前記ダムは、前記樹脂層の縁部と隣接して円柱状に形成されている、請求項23に記載の発光素子モジュール。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0060540 | 2011-06-22 | ||
KR1020110060540A KR101894349B1 (ko) | 2011-06-22 | 2011-06-22 | 발광소자 패키지 및 이를 포함하는 조명시스템 |
KR10-2011-0064717 | 2011-06-30 | ||
KR1020110064717A KR101813166B1 (ko) | 2011-06-30 | 2011-06-30 | 발광소자 모듈 및 이를 포함하는 조명시스템 |
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JP2016224526A Division JP6339161B2 (ja) | 2011-06-22 | 2016-11-17 | 発光素子パッケージ |
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Publication Number | Publication Date |
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JP2013008941A true JP2013008941A (ja) | 2013-01-10 |
JP2013008941A5 JP2013008941A5 (ja) | 2015-04-23 |
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JP2012051938A Pending JP2013008941A (ja) | 2011-06-22 | 2012-03-08 | 発光素子モジュール |
JP2016224526A Active JP6339161B2 (ja) | 2011-06-22 | 2016-11-17 | 発光素子パッケージ |
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JP2016224526A Active JP6339161B2 (ja) | 2011-06-22 | 2016-11-17 | 発光素子パッケージ |
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US (2) | US8878215B2 (ja) |
EP (1) | EP2538462B1 (ja) |
JP (2) | JP2013008941A (ja) |
TW (1) | TWI546984B (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015012287A (ja) * | 2013-06-27 | 2015-01-19 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2017112211A (ja) * | 2015-12-16 | 2017-06-22 | 豊田合成株式会社 | 発光装置の製造方法 |
JP2018037197A (ja) * | 2016-08-30 | 2018-03-08 | 東芝ライテック株式会社 | 車両用照明装置、および車両用灯具 |
JP2019080028A (ja) * | 2017-10-20 | 2019-05-23 | 日亜化学工業株式会社 | 発光装置 |
KR102022463B1 (ko) * | 2018-03-22 | 2019-09-19 | 주식회사 세미콘라이트 | 반도체 발광소자 및 이의 제조방법 |
JP2019192778A (ja) * | 2018-04-25 | 2019-10-31 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
US10971657B2 (en) | 2018-08-03 | 2021-04-06 | Nichia Corporation | Light emitting module and method of manufacturing the same |
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US20150054013A1 (en) | 2015-02-26 |
EP2538462A2 (en) | 2012-12-26 |
TWI546984B (zh) | 2016-08-21 |
US9705054B2 (en) | 2017-07-11 |
US8878215B2 (en) | 2014-11-04 |
US20120326193A1 (en) | 2012-12-27 |
CN102842670A (zh) | 2012-12-26 |
JP6339161B2 (ja) | 2018-06-06 |
EP2538462A3 (en) | 2015-01-21 |
TW201301575A (zh) | 2013-01-01 |
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EP2538462B1 (en) | 2019-05-01 |
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