JP2012523686A - 回路キャリア層の製造方法および回路キャリアを製造するためのその使用 - Google Patents
回路キャリア層の製造方法および回路キャリアを製造するためのその使用 Download PDFInfo
- Publication number
- JP2012523686A JP2012523686A JP2012503971A JP2012503971A JP2012523686A JP 2012523686 A JP2012523686 A JP 2012523686A JP 2012503971 A JP2012503971 A JP 2012503971A JP 2012503971 A JP2012503971 A JP 2012503971A JP 2012523686 A JP2012523686 A JP 2012523686A
- Authority
- JP
- Japan
- Prior art keywords
- circuit carrier
- copper
- layer
- auxiliary substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 150000001875 compounds Chemical class 0.000 claims abstract description 50
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 30
- 239000003989 dielectric material Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 25
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 117
- 239000011889 copper foil Substances 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 12
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 37
- 238000004070 electrodeposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 140
- 229910052802 copper Inorganic materials 0.000 description 95
- 239000010949 copper Substances 0.000 description 95
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 25
- 238000005530 etching Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 8
- 239000011888 foil Substances 0.000 description 8
- 238000003475 lamination Methods 0.000 description 7
- 239000011254 layer-forming composition Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 5
- 239000002318 adhesion promoter Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 125000000623 heterocyclic group Chemical group 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 150000003573 thiols Chemical group 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000011707 mineral Substances 0.000 description 4
- -1 nitrogen-containing compound Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 150000002924 oxiranes Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WZRRRFSJFQTGGB-UHFFFAOYSA-N 1,3,5-triazinane-2,4,6-trithione Chemical compound S=C1NC(=S)NC(=S)N1 WZRRRFSJFQTGGB-UHFFFAOYSA-N 0.000 description 1
- PAFOSBYDONDKIX-UHFFFAOYSA-N 1,3-bis(1,3-benzothiazol-2-ylmethyl)urea Chemical compound C1=CC=C2SC(CNC(NCC=3SC4=CC=CC=C4N=3)=O)=NC2=C1 PAFOSBYDONDKIX-UHFFFAOYSA-N 0.000 description 1
- MACMNSLOLFMQKL-UHFFFAOYSA-N 1-sulfanyltriazole Chemical compound SN1C=CN=N1 MACMNSLOLFMQKL-UHFFFAOYSA-N 0.000 description 1
- VDSUCSFTMJEFKM-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium;hydroxide Chemical compound O.C=1N=CNN=1 VDSUCSFTMJEFKM-UHFFFAOYSA-N 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- 125000005917 3-methylpentyl group Chemical group 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- FXADMRZICBQPQY-UHFFFAOYSA-N orthotelluric acid Chemical compound O[Te](O)(O)(O)(O)O FXADMRZICBQPQY-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000005385 peroxodisulfate group Chemical group 0.000 description 1
- 230000002186 photoactivation Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000000561 purinyl group Chemical class N1=C(N=C2N=CNC2=C1)* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- QYHFIVBSNOWOCQ-UHFFFAOYSA-N selenic acid Chemical compound O[Se](O)(=O)=O QYHFIVBSNOWOCQ-UHFFFAOYSA-N 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-O selenonium Chemical compound [SeH3+] SPVXKVOXSXTJOY-UHFFFAOYSA-O 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- VTLHPSMQDDEFRU-UHFFFAOYSA-O telluronium Chemical class [TeH3+] VTLHPSMQDDEFRU-UHFFFAOYSA-O 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
a) 2面を有する補助基板をもたらすステップであって、前記面の少なくとも一方が導電性表面、好ましくは銅表面を有するステップと;
少なくとも1つの導電性表面の少なくとも一方を、少なくとも1つの剥離層形成用化合物で処理するステップであって、前記剥離層形成用化合物が、少なくとも1つのチオール基を有する複素環式化合物を含む群から選択されるステップと;
b) 少なくとも1つの剥離層形成用化合物で処理された少なくとも1つの導電性表面の少なくとも1つの上にパターン化レジストコーティングを形成するステップであって、パターン化レジストコーティングが少なくとも1つのレジスト開口部を有し、こうして導電性表面を露出させているステップと;
c) 露出された導電性表面上に金属を電着させることにより少なくとも1つのレジスト開口部内に導電性パターンを形成するステップと;
d) 補助基板のそれぞれの面にそれぞれの誘電性材料層を形成することによって、各々の導電性パターンを誘電性材料内に包埋するステップと;
e) それぞれの包埋された導電性パターンを含む誘電性材料層と前記補助基板とを互いに分離させるステップ。
50ml/lの96wt%硫酸、30mg/lの5−カルボキシベンゾトリアゾールおよび水で構成された組成物中に35℃で60秒間補助基板1を浸漬させ、ドライフイルムフォトレジストの適用に先立ち乾燥させた。5−カルボキシベンゾトリアゾールのコーティングを剥離層4として使用した。
ドライフイルムフォトレジストの適用に先立ち、30mg/lの1H−1,2,4−トリアゾール−3−チオールおよび水から成る組成物中に35℃で60秒間、補助基板1を浸漬させた。
ドライフイルムフォトレジストの適用に先立ち、30mg/lの1H−1,2,4−トリアゾール−3−チオール、50ml/lの硫酸(96wt−%)および水から成る組成物中に35℃で60秒間、補助基板1を浸漬させた。
実施例1を反復しながら、5−カルボキシベンゾトリアゾールの代りに3アミノ−1H−1,2,4−トリアゾールを用いた。しかしながら、ドライフイルムフォトレジストが補助基板1の銅箔に対し充分な接着を示さないことが分った。さらに、カルボキシベンゾトリアゾールの場合と同様、銅導体パターンは、補助基板が誘電体から剥ぎ取られた時に補助基板1の銅層3にしっかり粘着していた。したがって、トレンチには銅導体パターン7が充填されていなかった。すなわち3アミノ−1H−1,2,4−トリアゾールは、剥離層4形成用化合物として役立たなかった。
実施例1を反復しながら、5−カルボキシベンゾトリアゾールの代りに1,2,3−ベンゾトリアゾールを用いた。しかしながら、カルボキシベンゾトリアゾールの場合と同様、銅導体パターンは、補助基板が誘電体から剥ぎ取られた時に補助基板1の銅層3にしっかり粘着していたことが分った。したがって、トレンチには銅導体パターン7が充填されていなかった。すなわち1,2,3−ベンゾトリアゾールは、剥離層4形成用化合物として役立たなかった。
実施例1を反復しながら、5−カルボキシベンゾトリアゾールの代りに2−メルカプトベンゾチアゾールを用いた。しかしながら、ドライフイルムフォトレジストが補助基板1の銅箔に対し充分な接着を示さないことが分った。さらに、カルボキシベンゾトリアゾールの場合と同様、銅導体パターンは、補助基板が誘電体から剥ぎ取られた時に補助基板1の銅層3にしっかり粘着していた。したがって、トレンチには銅導体パターン7が充填されていなかった。すなわち2−メルカプトベンゾチアゾールは、剥離層4形成用化合物として役立たなかった。
Claims (9)
- 回路キャリア層の製造方法であって、
a) 2面のうち少なくとも一方が導電性表面を有する2面を有する補助基板をもたらすステップと;
b) 前記少なくとも1つの導電性表面の少なくとも一方を、少なくとも1つの剥離層形成用化合物で処理するステップであって、前記少なくとも1つの剥離層形成用化合物が、各々少なくとも1つのチオール基を有するトリアゾール化合物を含む群から選択されるステップと;
c) 前記少なくとも1つの剥離層形成用化合物で処理された前記少なくとも1つの導電性表面の少なくとも1つの上にパターン化レジストコーティングを形成するステップであって、前記パターン化レジストコーティングが少なくとも1つのレジスト開口部を有し、これによって前記導電性表面を露出させているステップと;
d) 露出された導電性表面上に金属を電着させることにより前記少なくとも1つのレジスト開口部内に導電性パターンを形成するステップと;
e) 前記補助基板のそれぞれの面上にそれぞれの誘電性材料層を形成することによって、各々の導電性パターンを誘電性材料内に包埋するステップと;
f) 前記それぞれの包埋された導電性パターンを含む誘電性材料層と前記補助基板とを互いに分離させるステップと、
を含む方法。 - 前記補助基板が可撓性基板である、請求項1に記載の回路キャリア層の製造方法。
- 前記補助基板が、その片面に銅箔を有する可撓性基板である、請求項1または2に記載の回路キャリア層の製造方法。
- 前記パターン化レジストコーティングが、フォトレジストコーティングを被着させ、前記フォトレジストコーティングを露光し、前記フォトレジストコーティングを現像することによって形成される、請求項1〜3のいずれか一項に記載の回路キャリア層の製造方法。
- 前記パターン化レジストコーティングが、ステップd)とステップe)の間で除去される、請求項1〜4のいずれか一項に記載の回路キャリア層の製造方法。
- それぞれの包埋された導電性パターンを伴う各誘電性材料層とキャリア基板を互いに分離させる前記ステップが、前記それぞれの包埋された導電性パターンを伴う誘電性材料層から前記補助基板を機械的に剥ぎ取るステップを含む、請求項1〜5のいずれか一項に記載の回路キャリア層の製造方法。
- 少なくとも1つのチオール基を有する複素環式化合物の少なくとも1つが1H−1,2,4−トリアゾール−3−チオール、3−アミノ−1,2,4−トリアゾール−5−チオールおよび2−メルカプトベンズイミダゾールを含む群から選択される、請求項1〜7のいずれか一項に記載の回路キャリア層の製造方法。
- 少なくとも2つの回路キャリア層をさらに接合させることにより回路キャリアを製造するための、請求項1〜8のいずれか一項に記載の回路キャリア層の製造方法の使用法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09090006.9 | 2009-04-09 | ||
EP09090006A EP2240005A1 (en) | 2009-04-09 | 2009-04-09 | A method of manufacturing a circuit carrier layer and a use of said method for manufacturing a circuit carrier |
PCT/EP2010/054196 WO2010115774A1 (en) | 2009-04-09 | 2010-03-30 | A method of manufacturing a circuit carrier layer and a use of said method for manufacturing a circuit carrier |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012523686A true JP2012523686A (ja) | 2012-10-04 |
JP5531092B2 JP5531092B2 (ja) | 2014-06-25 |
Family
ID=40872430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012503971A Active JP5531092B2 (ja) | 2009-04-09 | 2010-03-30 | 回路キャリア層の製造方法および回路キャリアを製造するためのその使用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120118753A1 (ja) |
EP (2) | EP2240005A1 (ja) |
JP (1) | JP5531092B2 (ja) |
KR (1) | KR101546999B1 (ja) |
CN (1) | CN102388683B (ja) |
TW (1) | TWI461132B (ja) |
WO (1) | WO2010115774A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101354344B1 (ko) * | 2005-05-19 | 2014-01-22 | 미츠비시 가스 가가쿠 가부시키가이샤 | 경화성 조성물 |
CN102480846A (zh) * | 2011-05-11 | 2012-05-30 | 深圳光启高等理工研究院 | 一种柔性基板的制备方法和柔性基板 |
KR20130055343A (ko) * | 2011-11-18 | 2013-05-28 | 삼성전기주식회사 | 인쇄회로기판 및 그의 제조방법 |
JP6006012B2 (ja) * | 2012-06-19 | 2016-10-12 | 日本特殊陶業株式会社 | セラミック多層基板の製造方法 |
JP6044936B2 (ja) * | 2013-04-24 | 2016-12-14 | Shマテリアル株式会社 | 半導体素子搭載用基板の製造方法 |
TWI583275B (zh) * | 2014-12-31 | 2017-05-11 | Circuit board copper etching method | |
JP5842077B1 (ja) * | 2015-07-01 | 2016-01-13 | 三井金属鉱業株式会社 | キャリア付銅箔、銅張積層板及びプリント配線板 |
TW201826899A (zh) * | 2017-01-03 | 2018-07-16 | 台虹科技股份有限公司 | 可撓性電路板之製造方法 |
US10658281B2 (en) * | 2017-09-29 | 2020-05-19 | Intel Corporation | Integrated circuit substrate and method of making |
CN110600458A (zh) * | 2018-06-12 | 2019-12-20 | 深圳市环基实业有限公司 | 一种led灯及其制作方法 |
CN112996658A (zh) * | 2018-11-01 | 2021-06-18 | 株式会社钟化 | 层叠体及其制造方法、以及印刷电路板的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11317574A (ja) * | 1998-01-19 | 1999-11-16 | Mitsui Mining & Smelting Co Ltd | 複合銅箔およびその製造方法並びに該複合銅箔を用いた銅張り積層板およびプリント配線板 |
JP2002026475A (ja) * | 2000-07-07 | 2002-01-25 | Mitsui Mining & Smelting Co Ltd | キャリア箔付銅箔回路及びそれを用いたプリント配線板の製造方法並びにプリント配線板 |
JP2003347149A (ja) * | 2002-05-23 | 2003-12-05 | Nitto Denko Corp | 金属転写シート、金属転写シートの製造方法およびセラミックコンデンサの製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4606787A (en) | 1982-03-04 | 1986-08-19 | Etd Technology, Inc. | Method and apparatus for manufacturing multi layer printed circuit boards |
US5073456A (en) | 1989-12-05 | 1991-12-17 | E. I. Du Pont De Nemours And Company | Multilayer printed circuit board formation |
DE69218344T2 (de) | 1991-11-29 | 1997-10-23 | Hitachi Chemical Co., Ltd., Tokio/Tokyo | Herstellungsverfahren für eine gedruckte Schaltung |
DE69418698T2 (de) | 1994-04-14 | 1999-10-07 | Hewlett-Packard Gmbh | Verfahren zur Herstellung von Leiterplatten |
TW302387B (en) * | 1995-05-20 | 1997-04-11 | Du Pont | Aqueous processable, multilayer, photoimageable permanent coatings for printed circuits |
JPH0964514A (ja) * | 1995-08-29 | 1997-03-07 | Matsushita Electric Works Ltd | プリント配線板の製造方法 |
DE19620095B4 (de) | 1996-05-18 | 2006-07-06 | Tamm, Wilhelm, Dipl.-Ing. (FH) | Verfahren zur Herstellung von Leiterplatten |
US20020064728A1 (en) * | 1996-09-05 | 2002-05-30 | Weed Gregory C. | Near IR sensitive photoimageable/photopolymerizable compositions, media, and associated processes |
US6270889B1 (en) * | 1998-01-19 | 2001-08-07 | Mitsui Mining & Smelting Co., Ltd. | Making and using an ultra-thin copper foil |
TW460622B (en) | 1998-02-03 | 2001-10-21 | Atotech Deutschland Gmbh | Solution and process to pretreat copper surfaces |
KR20040088555A (ko) * | 2002-02-28 | 2004-10-16 | 니폰 제온 가부시키가이샤 | 부분 도금 방법, 부분 도금 수지 기재, 및 다층 회로기판의 제조방법 |
JP3541360B2 (ja) * | 2002-05-17 | 2004-07-07 | 独立行政法人 科学技術振興機構 | 多層回路構造の形成方法及び多層回路構造を有する基体 |
US7537668B2 (en) | 2004-07-21 | 2009-05-26 | Samsung Electro-Mechanics Co., Ltd. | Method of fabricating high density printed circuit board |
TW200626358A (en) * | 2004-11-30 | 2006-08-01 | Nippon Steel Chemical Co | Copper-clad laminate |
FI20045501A (fi) | 2004-12-23 | 2006-06-24 | Aspocomp Technology Oy | Johdinkuvio, kytkentäalusta ja johdinkuvion ja kytkentäalustan valmistusmenetelmä |
US7579134B2 (en) * | 2005-03-15 | 2009-08-25 | E. I. Dupont De Nemours And Company | Polyimide composite coverlays and methods and compositions relating thereto |
KR100839760B1 (ko) * | 2006-02-06 | 2008-06-19 | 주식회사 엘지화학 | 칩 온 필름용 동장 적층판 |
-
2009
- 2009-04-09 EP EP09090006A patent/EP2240005A1/en not_active Withdrawn
-
2010
- 2010-03-30 KR KR1020117023654A patent/KR101546999B1/ko active IP Right Grant
- 2010-03-30 JP JP2012503971A patent/JP5531092B2/ja active Active
- 2010-03-30 EP EP10711413A patent/EP2417841B1/en active Active
- 2010-03-30 CN CN201080015998.2A patent/CN102388683B/zh active Active
- 2010-03-30 US US13/260,756 patent/US20120118753A1/en not_active Abandoned
- 2010-03-30 WO PCT/EP2010/054196 patent/WO2010115774A1/en active Application Filing
- 2010-04-01 TW TW099110095A patent/TWI461132B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11317574A (ja) * | 1998-01-19 | 1999-11-16 | Mitsui Mining & Smelting Co Ltd | 複合銅箔およびその製造方法並びに該複合銅箔を用いた銅張り積層板およびプリント配線板 |
JP2002026475A (ja) * | 2000-07-07 | 2002-01-25 | Mitsui Mining & Smelting Co Ltd | キャリア箔付銅箔回路及びそれを用いたプリント配線板の製造方法並びにプリント配線板 |
JP2003347149A (ja) * | 2002-05-23 | 2003-12-05 | Nitto Denko Corp | 金属転写シート、金属転写シートの製造方法およびセラミックコンデンサの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101546999B1 (ko) | 2015-08-25 |
KR20120005458A (ko) | 2012-01-16 |
CN102388683B (zh) | 2014-03-05 |
WO2010115774A1 (en) | 2010-10-14 |
TWI461132B (zh) | 2014-11-11 |
US20120118753A1 (en) | 2012-05-17 |
EP2240005A1 (en) | 2010-10-13 |
CN102388683A (zh) | 2012-03-21 |
TW201101950A (en) | 2011-01-01 |
JP5531092B2 (ja) | 2014-06-25 |
EP2417841B1 (en) | 2013-01-30 |
EP2417841A1 (en) | 2012-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5531092B2 (ja) | 回路キャリア層の製造方法および回路キャリアを製造するためのその使用 | |
CN1842254B (zh) | 双面布线印制电路板及其制造方法 | |
TW442395B (en) | Composite copper foil, process for preparing the same, and copper-clad laminate and printed wiring board using the same | |
KR100632577B1 (ko) | 인쇄회로기판의 전해 금도금 방법 | |
EP1102524A1 (en) | Double-sided printed wiring board and method for manufacturing multilayer printed wiring board having three or more layers | |
KR101614169B1 (ko) | 비에칭 무레지스트 접착 조성물 및 공작물의 제조방법 | |
US6319620B1 (en) | Making and using an ultra-thin copper foil | |
US11690178B2 (en) | Multilayer printed wiring board and method of manufacturing the same | |
CN112312662A (zh) | 一种精细线路印制电路板的制作方法 | |
KR20140024906A (ko) | 마이그레이션 억제층 형성용 처리액 및 마이그레이션 억제층을 갖는 적층체의 제조 방법 | |
JP2007049116A (ja) | 多層配線基板の製造方法及び多層配線基板 | |
JP2006080473A (ja) | 回路基板及びこれに用いる密着層用処理液 | |
KR100916646B1 (ko) | 인쇄회로기판의 제조방법 | |
JP4129665B2 (ja) | 半導体パッケージ用基板の製造方法 | |
JPH04100294A (ja) | プリント配線板の製造方法 | |
KR100990575B1 (ko) | 미세 패턴을 갖는 인쇄회로기판 및 그 제조 방법 | |
WO2005015966A1 (ja) | プリント配線板およびその製造方法 | |
US20240237230A1 (en) | Component Carrier With Photosensitive Adhesion Promoter and Method of Manufacturing the Same | |
JP2005217216A (ja) | 半導体装置用両面配線テープキャリアおよびその製造方法 | |
Watanabe et al. | New Circuit Formation Technology for High Density PWB | |
JP2024017085A (ja) | 無電解めっきの前処理方法 | |
KR20030080546A (ko) | 다층 인쇄회로기판의 제조방법 | |
KR20120039925A (ko) | 인쇄회로기판의 제조 방법 | |
JPH06216536A (ja) | 配線板の製造法 | |
JPH04239796A (ja) | プリント配線板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140123 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140401 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140421 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5531092 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |