JP2009076878A - Substrate processing apparatus, method for processing substrate, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a method for processing a substrate which can efficiently collect a chemical liquid, without using a complicated mechanism. <P>SOLUTION: In the substrate processing apparatus, a control part 121 controls chemical processing using a chemical liquid after rinse-processing using a rinse liquid. The chemical liquid is supplied on the substrate while the substrate W is rotated at the number of rotations higher than that for the rinse processing to clean a waste liquid cup with the chemical liquid. The liquid received by a waste liquid cup 51 is disposed through a disposal line 113. After that, the substrate is treated with the chemical liquid by supplying the chemical liquid on the substrate while the substrate is rotated at the number of rotations for the chemical processing. The liquid received by the waste liquid cup is collected through a collection line 112. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing predetermined liquid processing such as cleaning processing on a substrate such as a semiconductor wafer, and a storage medium in which a program for executing such a method is stored. .

  In the manufacturing process of a semiconductor device, a process of supplying a processing liquid to a semiconductor wafer or a glass substrate that is a substrate to be processed and performing liquid processing is frequently used. An example of such a process is a cleaning process that removes particles, contamination, and the like attached to the substrate.

  As such a substrate processing apparatus, an apparatus is known in which a semiconductor wafer as a substrate is held on a spin chuck and a cleaning solution is supplied by supplying a processing solution such as a chemical solution to the wafer while the substrate is rotated. In this type of apparatus, the processing liquid is usually supplied to the center of the substrate. By rotating the substrate, the processing liquid is spread outward to form a liquid film, and the processing liquid is released to the outside of the substrate. After such a cleaning process, a rinse liquid such as pure water is supplied to the substrate while the substrate is rotated faster than the chemical process, and a rinse liquid film is formed on the substrate. Rinse to remove. For this reason, a drainage cup for receiving and draining the processing liquid or rinse liquid shaken out of the substrate is provided so as to surround the outside of the substrate (for example, Patent Document 1).

  By the way, in this type of substrate processing apparatus, an alkaline chemical solution, an acidic chemical solution, or the like is used as a chemical solution. However, these chemical solutions are relatively expensive, and it has been proposed to collect and circulate them (for example, Patent Document 2). ). This Patent Document 2 describes a method of switching between a plurality of cups and a chemical solution after the water washing treatment in order to avoid collecting a chemical solution having a low concentration due to mixing with pure water after the water washing as the rinsing treatment. A technique is described in which the chemical solution is discharged to the drain line for the first few seconds of the process, and then switched to the recovery line to recover the chemical solution.

However, among the techniques disclosed in Patent Document 2, in the former case, the apparatus becomes large and complicated. In the latter case, since rinsing is performed at a higher rotational speed than during chemical treatment from the viewpoint of reliably performing the rinsing treatment, pure water, which is a rinsing liquid, adheres to a high portion of the cup, There is a problem in that it takes a long time to wash away the chemical liquid and discards the chemical liquid, resulting in a low chemical recovery rate.
JP 2002-368066 A JP-A-5-243202

The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of efficiently recovering a chemical solution without using a complicated mechanism.
It is another object of the present invention to provide a storage medium storing a program for executing such a substrate processing method.

  In order to solve the above problems, according to a first aspect of the present invention, a substrate holding unit that holds a substrate horizontally and can be rotated together with the substrate, a rotating mechanism that rotates the substrate holding unit, and a chemical solution tank that stores a chemical solution A chemical solution supply mechanism for supplying a chemical solution from the chemical solution tank to the substrate, a rinse solution supply mechanism for supplying a rinse solution to the substrate, and an outer side of the substrate held by the substrate holding portion. An annular drainage cup that receives a chemical solution or a rinsing liquid splashing from a rotating substrate, a waste line that is connected to the drainage cup and discards the liquid received in the drainage cup, and is connected to the drainage cup. A recovery line for recovering the liquid received in the drain cup to the chemical tank, a switching means for switching between recovery of the liquid by the recovery line and disposal of the liquid by the disposal line, and the chemical supply A control unit that controls supply of the chemical liquid by a mechanism, supply of the rinse liquid by the rinse liquid supply mechanism, rotation of a substrate by the rotation mechanism, switching of disposal and recovery of the liquid by the switching means, and the control When the chemical solution treatment with the chemical solution is performed after the rinse treatment with the rinse solution, the substrate is first set at a rotation speed equal to or higher than the rotation speed for the rinse treatment with the waste line being valid and the recovery line being invalid. The chemical solution is supplied onto the substrate while rotating the substrate to wash the drain cup with the chemical solution, and the liquid received in the drain cup at that time is discarded by the discard line. The recovery line is switched to an effective state, and the chemical solution is supplied to the substrate while the substrate is rotated at the number of rotations for chemical treatment to perform the chemical treatment of the substrate. In this case, the substrate processing apparatus is preset so that the liquid received by the drain cup is collected by the collection line.

  In the first aspect, the drainage cup is provided inside the drain cup so as to surround the substrate held by the substrate holding unit, and rotates together with the substrate holding unit and the substrate. A swirl cup that receives the swung liquid and guides it to the drain cup, and that forms a swirling flow of the liquid in the drain cup when rotating can be further provided. The rotating cup may be connected to a member that is inserted into the draining cup and rotates together with the rotating cup to assist the formation of the swirling flow. In this case, the member that assists the formation of the swirling flow may be a lower portion of the cylindrical outer wall portion of the rotating cup.

  In the first aspect, the control unit performs a rinsing process by supplying the rinsing liquid onto the first substrate while rotating the first substrate at a first rotational speed; In addition, the chemical solution is supplied to the substrate to be processed while the substrate to be processed which is the first substrate or the new second substrate is rotated at a second rotational speed equal to or higher than the first rotational speed, and the preliminary processing is performed. In this case, with the waste line being valid and the recovery line being invalid, the liquid received in the drain cup is sent to the waste line, and then the substrate to be treated is moved to the first line. The chemical solution is supplied onto the substrate to be processed while rotating at a third rotational speed lower than the rotational speed to perform the chemical treatment. At this time, the waste line is invalid and the recovery line is valid. The liquid received in the liquid cup It can be made to be preset to perform the step of sending to.

  In this case, the substrate to be processed is the second substrate, and the control unit rotates the first substrate at the third rotation speed before the rinsing process. It may be preset to execute the step of supplying the chemical liquid and performing the chemical liquid treatment. Instead, the substrate to be processed is the first substrate, and the control unit rotates the first substrate at a rotational speed lower than the first rotational speed before the rinsing process. It may be preset to perform a process of supplying a chemical solution different from the chemical solution on one substrate and performing a different chemical treatment.

  The controller may be preset to send the liquid received in the drain cup to the waste line with the waste line being valid and the recovery line being invalid during the rinsing process. it can. Instead, during the rinsing process, the control unit sets the other waste line different from the waste line to be valid and the recovery line is invalid, and receives the liquid received in the drain cup from the other waste line. Can be preset to send to.

  The waste line and the recovery line are connected to the drainage cup via a common discharge pipe, and the switching means is arranged in the discharge pipe at a position where the waste line and the recovery line branch. A switching valve provided and controlled by the control unit can be provided.

  In the second aspect of the present invention, it is provided so as to surround the outside of the substrate held by the rotatable substrate holding unit together with the substrate, inside the annular drainage cup that receives the liquid scattered from the rotating substrate, A substrate processing method for supplying a chemical liquid and a rinsing liquid to perform substrate processing, the step of supplying the rinsing liquid to a substrate after chemical liquid processing and performing the rinsing process, and supplying the chemical liquid to the substrate to the substrate A step of performing a chemical treatment, and when performing the chemical treatment with the chemical after the rinse treatment with the rinse liquid, first, the substrate is rotated on the substrate while rotating the substrate at a rotational speed equal to or higher than the rotational speed for the rinse treatment. Supplying a chemical solution to wash the drain cup with the chemical solution, discarding the liquid received in the drain cup at that time, and then rotating the substrate at the number of revolutions for the chemical treatment, Supply board medicine It performs processing, to provide a substrate processing method characterized by recovering the liquid received by the drain cup at that time.

  In the second aspect, the substrate is provided inside the drain cup so as to surround the substrate held by the substrate holding unit, rotates together with the substrate holding unit and the substrate, and rotates from the substrate when the substrate is rotated. The discharge of the chemical liquid can be promoted by the swirl flow accompanying the rotation of the rotating cup that receives the shaken liquid and guides it to the drainage cup. In this case, the rotating cup can be connected to a member that is inserted into the draining cup and rotates together with the rotating cup to assist the formation of the swirling flow.

  Further, in the second aspect, a step of supplying a rinse liquid onto the first substrate while rotating the first substrate at a first rotation speed to perform a rinsing process; A pretreatment by supplying the chemical solution to the substrate to be processed while rotating the substrate to be processed or a new substrate to be processed at a second rotational speed equal to or higher than the first rotational speed. , A step of discarding the liquid received in the drain cup, and then supplying the chemical liquid onto the substrate to be processed while rotating the substrate to be processed at a third rotational speed lower than the first rotational speed. Then, a chemical treatment is performed, and at this time, a step of recovering the liquid received in the drain cup can be provided.

  In this case, the substrate to be processed is the second substrate, and the method includes a step of rotating the first substrate at the third rotational speed on the first substrate before the rinsing process. A step of supplying the chemical solution and performing the chemical treatment. Instead, the substrate to be processed is the first substrate, and the method includes rotating the first substrate at a rotational speed less than the first rotational speed before the rinsing process. A step of supplying a chemical solution different from the chemical solution on the substrate and performing a different chemical treatment.

  Further, in the second aspect, a step of discarding the liquid received in the draining cup during the rinsing process can be provided.

  According to a third aspect of the present invention, there is provided a computer-readable storage medium that operates on a computer and stores a program for controlling the substrate processing apparatus, and the program is executed when the substrate processing apparatus is executed. Is controlled so as to surround the outside of the substrate held by the substrate holder that can rotate together with the substrate, and inside the annular drainage cup that receives the liquid scattered from the rotating substrate, the chemical solution and the rinse solution A substrate processing method for performing substrate processing by supplying a rinse liquid to the substrate and performing the rinse treatment; and supplying the chemical liquid to the substrate to perform chemical processing on the substrate. And performing the chemical solution treatment with the chemical solution after the rinse treatment with the rinse solution, first, the substrate is rotated while rotating the substrate at a rotation speed equal to or higher than the rotation speed for the rinse treatment. The chemical solution is supplied to the top and the drainage cup is washed with the chemical solution. At this time, the liquid received in the drainage cup is discarded, and then the substrate is rotated on the substrate while rotating the substrate at the number of revolutions for chemical treatment. Provided is a storage medium characterized in that the chemical solution is supplied to perform chemical treatment of a substrate, and the liquid received in the drain cup at that time is collected.

  According to the present invention, in the substrate processing apparatus capable of recovering the chemical solution from the drain cup via the discharge pipe, when the chemical solution treatment with the chemical solution is performed after the rinse treatment with the rinse solution, the number of rotations for the rinsing process is first exceeded. The chemical solution is supplied by the chemical solution supply mechanism while the substrate is rotated by the rotation mechanism at the number of rotations, the waste cup is washed with the chemical solution, the liquid is discarded, and the chemical solution at the time of the chemical treatment is Since the chemical liquid is collected, the chemical liquid easily reaches the height of the rinsing liquid remaining in the drain cup, and the rinsing liquid can be washed away in a short time by the chemical liquid. For this reason, the chemical solution to be discarded can be reduced, and the chemical solution can be efficiently recovered during the subsequent chemical treatment.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the present invention is applied to a liquid processing apparatus that performs front and back surface cleaning of a semiconductor wafer (hereinafter simply referred to as a wafer) will be described.

  1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is an enlarged cross-sectional view showing an exhaust / drainage part of the substrate processing apparatus of FIG. FIG.

  A plurality of substrate processing apparatuses 100 are incorporated in a liquid processing system (not shown). As shown in FIGS. 1 and 2, the liquid processing apparatus 100 includes a base plate 1, a wafer holder 2 that rotatably holds a wafer W that is a substrate to be processed, and a rotation motor 3 that rotates the wafer holder 2. A rotating cup 4 that is provided so as to surround the wafer W held by the wafer holding unit 2 and rotates together with the wafer holding unit 2, a surface-side liquid supply nozzle 5 that supplies a processing liquid to the surface of the wafer W, A backside liquid supply nozzle 6 for supplying a processing liquid to the backside of the wafer W and an exhaust / drainage unit 7 provided at the peripheral edge of the rotary cup 4 are provided. A casing 8 is provided so as to cover the periphery of the exhaust / drainage unit 7 and the upper portion of the wafer W. At the upper part of the casing 8 is provided an airflow introduction part 9 for introducing an airflow from a fan filter unit (FFU) of the liquid processing system through an introduction port 9a provided on the side part, and the wafer holding part 2 A down flow of clean air is supplied to the wafer W held on the substrate.

  The wafer holding unit 2 includes a horizontally-rotating rotating plate 11 having a disk shape and a cylindrical rotating shaft 12 connected to the center of the back surface and extending vertically downward. A circular hole 11 a that communicates with the hole 12 a in the rotating shaft 12 is formed at the center of the rotating plate 11. And the raising / lowering member 13 provided with the back surface side liquid supply nozzle 6 is provided so that raising / lowering is possible in the hole 12a and the hole 11a. The rotating plate 11 is provided with holding members 14 for holding the outer edge of the wafer W, and as shown in FIG. 2, three of them are arranged at equal intervals. The holding member 14 is configured to hold the wafer W horizontally with the wafer W slightly floating from the rotating plate 11. The holding member 14 includes a holding portion 14a capable of holding the end surface of the wafer W, an attaching / detaching portion 14b extending from the holding portion 14a toward the center of the back surface of the rotating plate, and a rotating shaft for rotating the holding portion 14a in a vertical plane. 14c, and the upper end of the detachable portion 14b is pushed upward by a cylinder mechanism (not shown), whereby the holding portion 14a rotates outwardly and the holding of the wafer W is released. The holding member 14 is urged in a direction in which the holding portion 14a holds the wafer W by a spring member (not shown), and the wafer W is held by the holding member 14 when the cylinder mechanism is not operated.

  The rotating shaft 12 is rotatably supported by the base plate 1 via a bearing member 15 having two bearings 15a. A pulley 16 is fitted into the lower end of the rotating shaft 12, and a belt 17 is wound around the pulley 16. The belt 17 is also wound around a pulley 18 attached to the shaft of the motor 3. The rotating shaft 12 is rotated via the pulley 18, the belt 17 and the pulley 16 by rotating the motor 3.

  The front surface side liquid supply nozzle 5 is attached to the tip of the nozzle arm 22a while being held by the nozzle holding member 22, and passes through a flow path 83a provided in the nozzle arm 22a and is pure as a chemical liquid or a rinse liquid. Water is supplied, and a chemical solution or pure water is discharged through a nozzle hole 5a provided therein.

  As shown in FIG. 2, the nozzle arm 22 a is provided so as to be rotatable about the shaft 23 by the drive mechanism 81. By rotating the nozzle arm 22 a, the surface side liquid supply nozzle 5 is centered on the wafer W. The wafer cleaning position on the upper and outer circumferences and the retracted position on the outside of the wafer W can be taken. The nozzle arm 22a can be moved up and down by an elevating mechanism 82 such as a cylinder mechanism.

  A flow path 83 is provided in the nozzle arm 22 a, and the nozzle hole 5 a of the surface side liquid supply nozzle 5 is connected to one end of the flow path 83. A pipe 84 a is connected to the other end of the flow path 83. Valves 86 and 87 are provided on the pipe 84a. A pipe 88 is connected to the valve 86, and a chemical solution tank 89 is connected to the other end of the pipe 88. A pipe 90 is connected to the valve 87, and a DIW supply source 91 that supplies pure water (DIW) is connected to the other end of the pipe 90. The chemical liquid and pure water can be supplied from the chemical liquid tank 89 and the DIW supply source 91 to the surface liquid supply nozzle 5 through the pipe 84a and the flow path 83, respectively. Note that a chemical solution replenishment line 97 for replenishing the chemical solution and a pure water supply line 98 for supplying pure water for diluting the chemical solution are connected to the chemical solution tank 89.

  The back surface side liquid supply nozzle 6 is provided at the center of the elevating member 13, and a nozzle hole 6 a extending along the longitudinal direction is formed therein. A pipe 84b is connected to the lower end of the nozzle hole 6a. Valves 92 and 93 are provided on the pipe 84b. A pipe 94 is connected to the valve 92, and the chemical liquid tank 89 is connected to the other end of the pipe 94. A pipe 95 is connected to the valve 93, and the DIW supply source 91 is connected to the other end of the pipe 95. The chemical liquid and the pure water can be supplied from the chemical liquid tank 89 and the DIW supply source 91 to the back surface liquid supply nozzle 6 through the pipe 84b.

  Examples of the chemical solution include dilute hydrofluoric acid (DHF) which is an acid chemical solution, ammonia perwater (SC1) which is an alkaline chemical solution, and one or more chemical solutions can be supplied. In the case where two or more kinds of chemical solutions are supplied, a tank is provided for each of them and similarly connected to the pipes 84a and 84b.

  A wafer support 24 for supporting the wafer W is provided at the upper end of the elevating member 13. On the upper surface of the wafer support 24, there are three wafer support pins 25 (only two are shown) for supporting the wafer W. A cylinder mechanism 27 is connected to the lower end of the back-side liquid supply nozzle 6 via a connection member 26. The wafer W is moved up and down by moving the lifting member 13 up and down by the cylinder mechanism 27 to load the wafer W. And unloading is performed.

  The rotary cup 4 has an annular flange 31 that extends obliquely upward inward from the upper end of the rotary plate 11 and a cylindrical outer wall 32 that extends vertically downward from the outer end of the flange 31. . As shown in the enlarged view of FIG. 3, an annular gap 33 is formed between the outer wall portion 32 and the rotary plate 11, and the wafer W is transferred from the gap 33 to the rotary plate 11 and the rotary cup 4. At the same time, pure water which is a chemical solution and a rinsing solution which is rotated and scattered is guided downward.

  A plate-shaped guide member 35 is interposed between the flange portion 31 and the rotating plate 11 at a position substantially the same height as the wafer W. As shown in FIG. 4, a plurality of openings 36 and 37 are formed between the flange 31 and the guide member 35, and between the guide member 35 and the rotating plate 11, respectively. The plurality of spacer members 38 and 39 are arranged along the circumferential direction. The flange 31, the guide member 35, the rotating plate 11, and the spacer members 38 and 39 between them are screwed with screws 40.

  The guide member 35 is provided such that the front and back surfaces thereof are substantially continuous with the front and back surfaces of the wafer W. When the wafer 3 is rotated together with the wafer W by the motor 3 and the processing liquid is supplied from the surface side liquid supply nozzle 5 to the center of the surface of the wafer W, the processing liquid is subjected to the wafer W by centrifugal force. Is spread out from the periphery of the wafer W. The processing liquid shaken off from the surface of the wafer W is guided to the surface of the guide member 35 provided substantially continuously, discharged outward from the opening 36, and guided downward by the outer wall portion 32. Similarly, when the wafer holding unit 2 and the rotating cup 4 are rotated together with the wafer W and the processing liquid is supplied from the back surface side liquid supply nozzle 6 to the center of the back surface of the wafer W, the processing liquid is subjected to the wafer W by centrifugal force. Is spread from the periphery of the wafer W. The processing liquid spun off from the back surface of the wafer W is guided to the back surface of the guide member 35 provided substantially continuously, discharged outward from the opening 37, and guided downward by the outer wall portion 32. At this time, since the centrifugal force acts on the processing liquid that has reached the spacer members 38 and 39 and the outer wall portion 32, they are prevented from returning to the inside as mist.

  Further, since the guide member 35 guides the processing liquid shaken off from the front surface and the back surface of the wafer W in this way, the processing liquid detached from the peripheral edge of the wafer W is not easily turbulent and rotates without causing the processing liquid to be misted. It can be led out of the cup 4. As shown in FIG. 2, the guide member 35 is provided with a notch 41 at a position corresponding to the wafer holding member 14 so as to avoid the wafer holding member 14.

  The exhaust / drainage part 7 is mainly for recovering gas and liquid discharged from the space surrounded by the rotary plate 11 and the rotary cup 4, and as shown in the enlarged view of FIG. An annular drain cup 51 that receives the treatment liquid and the rinse liquid discharged from the cup 4 and an exhaust cup 52 that is concentric with the drain cup 51 so as to accommodate the drain cup 51 are provided. .

  As shown in FIGS. 1 and 3, the drainage cup 51 includes a cylindrical outer peripheral wall 53 that is provided on the outer side of the rotating cup 4 in the vicinity of the outer wall portion 32, and a lower end of the outer peripheral wall 53. And an inner wall 54 extending inward from the portion. An inner peripheral wall 54 a is formed vertically on the inner periphery of the inner wall 54. An annular space defined by the outer peripheral wall 53 and the inner wall 54 serves as a liquid storage portion 56 that stores the processing liquid and the rinse liquid discharged from the rotary cup 4. Further, at the upper end of the outer peripheral wall 53, a protruding portion 53 a that protrudes from the upper portion of the rotating cup 4 is provided in order to prevent the processing liquid from jumping out from the draining cup 51. A partition wall 55 that extends from the inner wall 54 to the vicinity of the lower surface of the rotating plate 11 and that is annularly provided along the circumferential direction of the drainage cup 51 is provided at a position corresponding to the outside of the holding member 14 of the liquid container 56. is doing. And the liquid storage part 56 is divided into the main cup part 56a which receives the liquid discharged | emitted from the clearance gap 33 by this partition wall 55, and the subcup part 56b which receives the liquid dripped from the holding part 14a vicinity part of the holding member 14. It is separated. The bottom surface 57 of the liquid storage portion 56 is divided by the partition wall 55 into a first portion 57a corresponding to the main cup portion 56a and a second portion 57b corresponding to the sub cup portion 56b, both of which are from the outside to the inside. It inclines so that it may rise toward (rotation center side). The inner end of the second portion 57b reaches a position corresponding to the inner side (rotation center side) of the holding portion 14a of the holding member 14. The partition wall 55 serves to prevent the airflow formed by the portion of the holding member 14 protruding below the rotating plate 11 from reaching the wafer W side with mist when the rotating plate 11 rotates. Have. The partition wall 55 is formed with a hole 58 for guiding the processing liquid from the sub cup portion 56b to the main cup portion 56a (see FIG. 1).

  As shown in FIG. 1, a drainage port 60 for discharging the liquid from the liquid container 56 is provided on the outermost part of the inner wall 54 of the drainage cup 51. A drainage pipe 61 for discharging the water is connected. The drainage pipe 61 is provided with a switching valve 111, and a chemical solution recovery line 112 for recovering the chemical solution is connected to the switching valve 111. The switching valve 111 switches the drainage pipe 61 between a recovery line 112 and a drain pipe 113 that is a disposal line.

  In the drain cup 51, the wafer W, the rotating plate 11 and the rotating cup 4 rotate integrally to form a swirling flow of the processing liquid and the rinse liquid discharged and stored from the rotating cup 4. It is discharged through the mouth 60 and the drainage pipe 61. This swirling flow is generated only by the rotation of the rotating plate 11 of the wafer W, but is a swirling air flow formed by the lower end portion of the outer wall portion 32 inserted into the draining cup 51 when the rotating cup 4 rotates. By accompanying the processing liquid and the rinsing liquid in the drain cup 51, a swirl flow that is faster than the swirl flow generated only by the wafer W and the rotating plate 11 can be formed, and the liquid is discharged from the drain port 60. The speed can be high.

  The exhaust cup 52 is provided so that the outer wall 64 provided perpendicular to the outer part of the outer peripheral wall 53 of the drain cup 51 and the inner part of the holding member 14 are perpendicular to the upper end and the upper end thereof is close to the rotary plate 11. The inner wall 65, the bottom wall 66 provided on the base plate 1, and the upper wall 67 that is curved upward from the outer wall 64 and is provided so as to cover the upper side of the rotating cup 4. The exhaust cup 52 takes in and exhausts mainly gas components in and around the rotary cup 4 from an annular inlet 68 formed between the upper side wall 67 and the flange 31 of the rotary cup 4. ing. Further, as shown in FIGS. 1 and 3, an exhaust port 70 is provided below the exhaust cup 52, and an exhaust pipe 71 is connected to the exhaust port 70. A suction mechanism (not shown) is provided on the downstream side of the exhaust pipe 71 so that the periphery of the rotary cup 4 can be exhausted. A plurality of exhaust ports 70 are provided, and can be switched and used in accordance with the type of treatment liquid.

  An annular outer ring space 99 a is formed between the outer peripheral wall 53, which is the outer wall of the drain cup 51, and the outer wall 64 of the exhaust cup 52, and the bottom of the drain cup 51 and the exhaust cup 52 An annular airflow adjusting member 97 in which a large number of air holes 98 are formed along the circumferential direction is provided on the outer portion of the exhaust port 70 between the bottom portion. The outer annular space 99a and the airflow adjustment member 97 are incorporated into the exhaust cup 52, and have a function of adjusting the airflow reaching the exhaust port 70 and exhausting it uniformly. That is, the air flow is uniformly guided downward over the entire circumference through the outer annular space 99a, which is an annular space, and the air flow adjusting member 97 having a large number of air holes 98 is provided to reduce pressure loss, that is, air flow. By providing resistance and dispersing the air flow, the exhaust can be performed relatively uniformly regardless of the distance from the exhaust port 70.

  Further, an annular inner annular space 99 b is formed between the inner peripheral wall 54 a of the drain cup 51 and the inner wall 65 of the exhaust cup 52, and the exhaust cup 51 is disposed on the inner peripheral side of the drain cup 51. A gap 77 between the bottom wall 52 and the bottom wall 52 is formed. And the gas component taken in from the inlet 68 flows not only in the outer annular space 99a but also in the liquid storage part 56 of the drain cup 51, and the airflow passes through the inner annular space 99b from the liquid storage part 56. The gas is guided downward uniformly over the entire circumference, and can be exhausted relatively uniformly from the exhaust port 70 through the gap 77.

  As described above, since the drainage from the drainage cup 51 and the exhaustion from the exhaust cup 52 are performed independently, the drainage and the exhaust can be guided in a separated state. Further, even if mist leaks from the drain cup 51, the exhaust cup 52 surrounds the periphery thereof, so that it is quickly discharged through the exhaust port 70, and the mist is reliably prevented from leaking outside.

  The substrate processing apparatus 100 has a process controller 121 composed of a microprocessor (computer). Each component of the substrate processing apparatus 100, for example, a rotary motor 3, valves, a cylinder driving mechanism, and the like are connected to the process controller 121. It is configured to be controlled. In addition, the process controller 121 visualizes the operation status of each component of the substrate processing apparatus 100 and a keyboard on which the process manager manages command input in order to manage each component of the substrate processing apparatus 100. A user interface 122 including a display for displaying is connected. Furthermore, the process controller 121 has a control program for realizing various processes executed by the substrate processing apparatus 100 under the control of the process controller 121 and predetermined components in the liquid processing apparatus 100 according to processing conditions. A storage unit 123 that stores a control program for executing the process, that is, a recipe, is connected. The recipe is stored in a storage medium in the storage unit 123. The storage medium may be a fixed one such as a hard disk or a portable one such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example.

  Then, if necessary, an arbitrary recipe is called from the storage unit 123 by an instruction from the user interface 122 and is executed by the process controller 121, so that the desired processing in the substrate processing apparatus 100 is performed under the control of the process controller 121. Is performed.

  Next, the operation of the substrate processing apparatus 100 configured as described above will be described with reference to FIGS. The following cleaning processing operation in the present embodiment is controlled by the process controller 121 based on the recipe stored in the storage unit 123.

  First, as shown in FIG. 5A, the wafer W is transferred from the transfer arm (not shown) onto the support pins 25 of the wafer support 24 in a state where the elevating member 13 is raised. Next, as shown in FIG. 5B, the elevating member 13 is lowered to a position where the wafer W can be held by the holding member 14, and the wafer W is chucked by the holding member 14. Then, as shown in FIG. 5C, the surface side liquid supply nozzle 5 is moved from the retracted position to the wafer cleaning position.

  In this state, as shown in FIG. 5D, the processing liquid is supplied from the front side liquid supply nozzle 5 and the back side liquid supply nozzle 6 while rotating the wafer W together with the holding member 2 and the rotary cup 4 by the rotary motor 3. As a predetermined chemical solution is supplied, the wafer W is cleaned.

  In this wafer cleaning process, the chemical solution is supplied from the front surface side liquid supply nozzle 5 and the back surface side liquid supply nozzle 6 to the center of the front and back surfaces of the wafer W while the wafer W is rotated. As a result, the chemical solution spreads outside the wafer W due to centrifugal force, and a cleaning process is performed in the process. Then, the chemical solution subjected to the cleaning process in this way is shaken off from the periphery of the wafer W. The shaken chemical solution reaches the drainage cup 51 and is basically collected in the chemical solution tank 89 via the drainage pipe 61 and the recovery pipe 112 and is circulated for use.

  The number of rotations of the wafer W during this chemical treatment is preferably in the range of 200 to 700 rpm. Moreover, it is preferable that the supply amount of a chemical | medical solution is 2.0-4.0L / min.

  After such chemical liquid processing, the processing liquid is switched to pure water as a rinsing liquid, and the wafer W is rotated by the rotation member 3 and the holding member 2 as shown in FIG. While rotating together with the cup 4, the wafer W is rinsed by supplying pure water, which is a rinse liquid, from the front surface side liquid supply nozzle 5 and the back surface side liquid supply nozzle 6. At this time, the switching valve 111 is switched from the recovery pipe 112 to the drain pipe 113 side, and the liquid received in the drain cup 51 is discarded. The number of rotations of the wafer during the rinsing process is preferably in the range of 300 to 1500 rpm. The supply amount of pure water is preferably 2.0 to 4.0 L / min.

  In the cleaning process and the rinsing process for the wafer W, the cup provided so as to surround the outside of the wafer W is the rotating cup 4 that rotates together with the wafer W, so that the chemical solution and the rinsing solution spun off from the wafer W rotate. Centrifugal force acts on the treatment liquid when it hits the cup 4, and scattering (misting) unlike the case of the fixed cup hardly occurs. Then, the processing liquid that has reached the rotary cup 4 is guided downward, and is discharged from the gap 33 to the main cup portion 56 a of the liquid storage portion 56 in the drain cup 51. On the other hand, since a hole for inserting the holding portion 14 a is provided at the attachment position of the holding member 14 of the rotating plate 11, the processing liquid is dropped from that portion into the sub-cup portion 56 b of the draining cup 51. Then, the chemical solution and the rinse solution received in the drainage cup 51 in this manner are discharged through the drainage pipe 61 from the drainage port 60 while turning inside the drainage cup 51, but with the rotation of the rotary cup 4. Thus, a swirling airflow formed in the drainage cup 51 from the outer wall portion 32 is formed, and the chemical liquid and the rinsing liquid in the drainage cup 51 are accompanied by this swirling airflow, so that a faster swirling flow is discharged. The liquid can be discharged from the liquid port 60 through the drain pipe 61 in a very short time.

  Further, the exhaust cup 52 mainly receives gas components in and around the rotary cup 4 from an inlet 68 that forms an annular shape between the upper wall 67 of the rotary cup 4 and the flange 31 of the rotary cup 4. The exhaust is exhausted through the exhaust pipe 71.

  After the chemical treatment and the rinsing treatment with pure water are performed in this way, the next chemical treatment is performed on the same wafer wafer using a different chemical solution, or on the next wafer using the same chemical solution. Against. However, the pure water in the rinsing process cannot be completely discharged, and the residual pure water 130 is present in the drain cup 51 as shown in FIG.

  In this way, when the next chemical treatment is performed in the state where the residual pure water 130 exists, the residual pure water 130 is mixed with the chemical solution that has reached the drain cup 51, and the concentration of the chemical solution is reduced. For this reason, the first chemical solution is used for so-called “co-washing” in which the residual pure water 130 is washed away. That is, first, the switching valve 111 is connected to the drain pipe 113 side (the waste line 113 is valid and the recovery line 112 is invalid), and the chemical liquid in the drain cup 51 is discarded. Then, after the residual pure water disappears, the switching valve 111 is switched to the recovery line 112 side (with the waste line 113 disabled and the recovery line 112 enabled), and the recovery of the chemical solution is started.

  However, during the rinsing process, the rotational speed is relatively high as 300 to 1500 rpm as described above, and the scattered pure water reaches the upper part inside the outer peripheral wall 53 of the draining cup 51, whereas in the chemical process. Since the rotational speed is lower than that in the rinsing process, specifically 200 to 700 rpm, it is difficult for the chemical liquid to reach the inner upper portion of the outer peripheral wall 53 of the drain cup 51 as shown in FIG. . For this reason, the time of co-washing with a chemical | medical solution must be lengthened, the quantity of the chemical | medical solution discarded without being collect | recovered increases, and the recovery rate of a chemical | medical solution will fall.

  Therefore, in the present embodiment, in the chemical processing after the rinsing process, the chemical liquid is supplied to the wafer W while rotating the wafer W by the rotation motor 3 at the same or higher rotational speed as that in the rinsing process. Then, the drainage cup 51 is washed together. Accordingly, as shown in FIG. 7B, the chemical solution quickly reaches the position of the residual pure water 130 in the drain cup, and the residual pure water 130 can be washed away in a short time. Can be shortened.

  Thereafter, the rotational speed of the wafer W is reduced to the above-described normal chemical processing speed of 200 to 700 rpm, the switching valve 111 is switched to the recovery line 112 side, and recovery of the chemical is started, and the chemical processing is continued.

  In this way, the time for co-washing can be shortened by rotating at the same or higher rotational speed as that for rinsing during co-washing, thus reducing the amount of chemicals to be discarded and washing. The recovery rate of the chemical solution in the processing can be increased.

Next, another embodiment of the present invention will be described.
FIG. 8 is a cross-sectional view showing a drain cup of a substrate processing apparatus according to another embodiment of the present invention. In the above embodiment, an example in which the present invention is applied to an apparatus having the rotating cup 4 has been described. However, in the present embodiment, an example in which a rotating cup is not used will be described.

  The substrate processing apparatus of the present embodiment is basically configured in the same manner as the substrate processing apparatus of the previous embodiment except that a rotating cup is not provided. In such a substrate processing apparatus, since the rotating cup does not exist, the liquid scattered from the wafer W reaches the draining cup 51 directly. And after performing a chemical | medical solution process similarly to previous embodiment and performing a rinse process continuously, as shown in FIG. 8, the residual pure water 130 exists inside the outer peripheral wall 53, etc. of the drainage cup 51. As shown in FIG.

  Even when there is no rotating cup as described above, when the next chemical processing is performed after the rinsing process, first, the wafer W is rotated at the same or higher rotational speed than that at the time of rinsing. As shown in FIG. 9, it is possible to quickly reach the uppermost residual pure water 130 present at the time of the rinsing process, and to shorten the washing time of the chemical solution.

  However, in the case of the previous embodiment, the rotation of the rotating cup 4 causes a swirling flow in the draining cup 51, and the swirling flow can quickly discharge the liquid in the draining cup 51. On the other hand, in the case of the present embodiment, such a swirling flow of the rotating cup does not exist, and therefore, the discharge time of the chemical solution for washing is longer than that of the previous embodiment. That is, in this embodiment, the effect of shortening the time of co-washing by rotating the wafer W at a rotation speed equal to or higher than that of the rinsing liquid at the initial stage of the chemical liquid processing can be obtained, In the embodiment, in addition to the effect of shortening the time of the co-washing, the effect of speeding up the discharge of the co-washing chemical liquid is also obtained, so that the previous embodiment can increase the chemical liquid recovery rate.

  FIG. 10 is a view showing a drainage system of a substrate processing apparatus (liquid processing apparatus) according to another embodiment of the present invention together with a tank of a liquid supply system.

  In the liquid processing apparatus 100 shown in FIG. 1, only one chemical solution is shown for easy understanding. However, the liquid processing apparatus may be configured to perform a cleaning process on each wafer W using an alkaline chemical solution and an acid chemical solution in a continuous process. FIG. 10 shows a drainage system of such a liquid processing apparatus.

  Specifically, the drainage pipe 61 is connected to a drainage switching unit 111X. The drainage switching unit 111X has an acid waste line 113a for discarding the acid drainage and an alkali drainage for discarding the alkaline drainage. An alkali waste line 113b, an acid recovery line 112a for recovering the acid chemical liquid, and an alkali recovery line 112b for recovering the alkaline chemical liquid are connected. The acid recovery line 112a and the alkali recovery line 112b are respectively connected to a tank 89a for an acid chemical solution (for example, dilute hydrofluoric acid (DHF)) and a tank 89b for an alkaline chemical solution (for example, ammonia superwater (SC1)) in the supply system. The Valves 114 are provided in each of the acid waste line 113a, the alkali waste line 113b, the acid recovery line 112a, and the alkali recovery line 112b.

  According to this configuration, by performing the processing steps for each wafer W in the following sequence, it is possible to sort according to the type of processing liquid. Thereby, even when a plurality of chemicals are used for each wafer W, the same effect as in the previous embodiment can be obtained. In the following description, the rotation of the substrate is substantially the same as the sequence described with reference to FIGS. Further, the order of the dilute hydrofluoric acid (DHF) cleaning and the ammonia overwater (SC1) cleaning may be the reverse of the following description.

  That is, when dilute hydrofluoric acid (DHF) cleaning is performed, the drainage switching unit 111X is switched to the acid recovery line 112a to recover dilute hydrofluoric acid (DHF) drainage. At the time of the rinsing process after washing with dilute hydrofluoric acid (DHF), the drainage switching unit 111X is switched to the acid waste line 113a to discard the wastewater mixed with the dilute hydrofluoric acid (DHF).

  At the time of cleaning with ammonia overwater (SC1) after the rinsing process, as the above-described co-washing process, first, the drainage switching unit 111X is switched to the alkaline waste line 113b, and the rinse liquid is added to the ammonia overwater (SC1). Discard the mixed effluent. Subsequently, the drainage switching unit 111X is switched to the alkali recovery line 112b to recover the ammonia overwater (SC1) drainage. At the time of the rinsing process after washing with ammonia overwater (SC1), the drainage switching unit 111X is switched to the alkali waste line 113b, and the wastewater mixed with the ammonia overwater (SC1) is discarded.

  The present invention can be variously modified without being limited to the above embodiment. For example, in the above-described embodiment, a cleaning processing apparatus that performs front and back surface cleaning of a wafer has been described as an example. However, the present invention is not limited thereto, and may be a cleaning processing apparatus that performs cleaning processing on only the front surface or only the back surface. Further, the liquid treatment is not limited to the cleaning treatment, and other liquid treatment may be used. Furthermore, although the case where a semiconductor wafer is used as the substrate to be processed has been described in the above embodiment, it may be applied to another substrate such as a flat panel display (FPD) substrate represented by a glass substrate for a liquid crystal display (LCD). Needless to say, it is applicable.

  The present invention is effective for a cleaning apparatus for removing particles and contamination adhering to a semiconductor wafer.

Sectional drawing which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention. 1 is a schematic plan view showing a substrate processing apparatus according to an embodiment of the present invention with a part cut away. Sectional drawing which expands and shows the exhaust_gas | exhaustion / drainage part of the substrate processing apparatus of FIG. The figure for demonstrating the attachment state of the rotation cup and guide member of the substrate processing apparatus of FIG. The figure for demonstrating operation | movement of the cleaning process of the substrate processing apparatus which concerns on one Embodiment of this invention. Sectional drawing which shows the state of the residual pure water after the rinse process in a drainage cup. When the number of rotations of the wafer is made lower than that at the time of rinsing processing in the case of co-washing with the chemical solution after the rinsing processing, and when the number of rotations of the wafer is equal to or higher than that at the time of rinsing processing according to this embodiment Sectional drawing which shows the state of a cup typically. Sectional drawing which shows the drainage cup of the substrate processing apparatus which concerns on other embodiment of this invention. Sectional drawing which shows the state of the drainage cup at the time of making the rotation speed of a wafer into the state equal to or more than the rotation speed at the time of a rinse process according to embodiment of this invention from the state of FIG. The figure which shows the drainage system of the substrate processing apparatus (liquid processing apparatus) which concerns on other embodiment of this invention with the tank of a liquid supply system.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1; Base plate 2; Wafer holding part 3; Rotating motor 4; Rotating cup 5; Front side liquid supply nozzle 6; Back side liquid supply nozzle 7; Exhaust / drain part 8; Casing 9; Rotating shaft 13; Elevating member 14; Holding member 22; Nozzle holding member 22a; Nozzle arm 31; Gutter 32; Outer wall 33; Gap 35; Guide member 51; Drain cup 52; Exhaust cup 53; ; Inner wall 56; liquid container 61; drainage pipe 84a; chemical liquid supply pipe 88; chemical liquid tank 100; substrate processing apparatus 111; switching valve 111X; drainage switching part 112; recovery pipe 112a; acid recovery line 112b; Line 113; Waste line 113a; Acid waste line 113b; Alkaline waste line 114; Valve 121; Controller 122; user interface 123; storage unit 130; residual pure water W; wafer

Claims (18)

A substrate holder that holds the substrate horizontally and can rotate with the substrate;
A rotation mechanism for rotating the substrate holder;
A chemical solution supply mechanism that has a chemical solution tank that stores the chemical solution, and supplies the chemical solution from the chemical solution tank to the substrate;
A rinsing liquid supply mechanism for supplying a rinsing liquid to the substrate;
An annular drainage cup provided so as to surround the outside of the substrate held by the substrate holding unit, and receiving a chemical liquid or a rinsing liquid scattered from the rotating substrate;
A waste line connected to the drain cup and discarding the liquid received in the drain cup;
A recovery line connected to the drain cup and recovering the liquid received in the drain cup to the chemical tank;
Switching means for switching the recovery of the liquid by the recovery line and the disposal of the liquid by the disposal line;
A controller that controls the supply of the chemical solution by the chemical solution supply mechanism, the supply of the rinse solution by the rinse solution supply mechanism, the rotation of the substrate by the rotation mechanism, and the switching of the disposal and recovery of the solution by the switching means. ,
The control unit, when performing the chemical liquid treatment with the chemical liquid after the rinse treatment with the rinse liquid,
First, in a state where the waste line is valid and the recovery line is invalid, the chemical liquid is supplied onto the substrate while rotating the substrate at a rotation speed equal to or higher than the number of rotations for rinsing, and the drain cup is Wash the liquid received in the drain cup at that time by the waste line,
Thereafter, the waste line is disabled and the recovery line is switched to the valid state, and the chemical solution is supplied to the substrate while rotating the substrate at the number of revolutions for chemical treatment to perform the chemical treatment of the substrate. A substrate processing apparatus, wherein the substrate processing apparatus is preset so that the liquid received by the drain cup is collected by the collection line.   Provided inside the drainage cup so as to surround the substrate held by the substrate holding unit, rotates together with the substrate holding unit and the substrate, and receives the liquid shaken off from the substrate when the substrate is rotated. The substrate processing apparatus according to claim 1, further comprising a rotating cup that guides the draining cup and forms a swirling flow of the liquid in the draining cup when rotating.   The substrate processing apparatus according to claim 2, wherein a member that is inserted into the draining cup and that rotates together with the rotating cup and assists the formation of the swirling flow is connected to the rotating cup.   The substrate processing apparatus according to claim 3, wherein the member that assists the formation of the swirling flow is a lower portion of a cylindrical outer wall portion of the rotating cup. The controller is configured to perform a rinsing process by supplying the rinsing liquid onto the first substrate while rotating the first substrate at a first rotation speed;
Next, the chemical solution is supplied to the substrate to be processed while the substrate to be processed, which is the first substrate or a new second substrate, is rotated at a second rotational speed equal to or higher than the first rotational speed, and the preliminary substrate is prepared. Performing a process, wherein the waste line is valid and the recovery line is invalid, and the liquid received in the drain cup is sent to the waste line;
Next, chemical processing is performed by supplying the chemical solution onto the substrate to be processed while rotating the substrate to be processed at a third rotational speed less than the first rotational speed. 5. The method according to any one of claims 1 to 4, wherein the recovery line is preset to execute a step of sending the liquid received in the drain cup to the recovery line in an effective state. 2. The substrate processing apparatus according to item 1.   The substrate to be processed is the second substrate, and the control unit rotates the first substrate on the first substrate while rotating the first substrate at the third rotation speed before the rinsing process. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is preset so as to perform the step of supplying the chemical solution and performing the chemical processing.   The substrate to be processed is the first substrate, and the control unit rotates the first substrate at a rotational speed lower than the first rotational speed before the rinsing process. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is preset so as to execute a process of supplying a chemical solution different from the chemical solution and performing a different chemical solution treatment thereon.   The control unit is preset to send the liquid received in the drain cup to the waste line with the waste line being valid and the recovery line being invalid during the rinsing process. The substrate processing apparatus according to claim 7.   In the rinsing process, the control unit is configured to send the liquid received in the drain cup to the another waste line while another waste line different from the waste line is valid and the recovery line is invalid. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is preset.   The waste line and the recovery line are connected to the drain cup via a common discharge pipe, and the switching means is disposed in the discharge pipe at a position where the waste line and the recovery line branch. The substrate processing apparatus according to claim 1, further comprising a switching valve controlled by the control unit. The substrate is provided so as to surround the outside of the substrate held by the rotatable substrate holder, and the chemical solution and the rinsing liquid are supplied inside the annular drain cup for receiving the liquid scattered from the rotating substrate. A substrate processing method for performing processing,
A step of supplying the rinse liquid to the substrate after the chemical treatment and performing a rinse treatment; and a step of supplying the chemical solution to the substrate and performing a chemical treatment on the substrate,
When performing the chemical treatment with the chemical solution after the rinse treatment with the rinse solution,
First, the chemical liquid is supplied onto the substrate while rotating the substrate at a rotational speed equal to or higher than the rotational speed for the rinsing process to wash the drain cup with the chemical liquid, and the liquid received in the drain cup at that time Discard,
Thereafter, the substrate is rotated at the number of revolutions for chemical treatment, the chemical solution is supplied onto the substrate to perform chemical treatment on the substrate, and the liquid received in the drain cup is collected at that time Processing method.   Provided inside the drainage cup so as to surround the substrate held by the substrate holding unit, rotates together with the substrate holding unit and the substrate, and receives the liquid shaken off from the substrate when the substrate is rotated. The substrate processing method according to claim 11, wherein the discharge of the chemical solution is promoted by a swirling flow accompanying the rotation of the rotating cup guided to the draining cup.   The substrate processing method according to claim 12, wherein a member that is inserted into the draining cup and that rotates together with the rotating cup and assists the formation of the swirling flow is connected to the rotating cup. Supplying the rinsing liquid onto the first substrate while rotating the first substrate at a first rotation speed, and performing a rinsing process;
Next, the chemical solution is supplied to the substrate to be processed while the substrate to be processed, which is the first substrate or a new second substrate, is rotated at a second rotational speed equal to or higher than the first rotational speed, and the preliminary substrate is prepared. Performing a process, and at this time, discarding the liquid received in the drain cup,
Next, chemical processing is performed by supplying the chemical solution onto the substrate to be processed while rotating the substrate to be processed at a third rotational speed lower than the first rotational speed. The substrate processing method according to claim 11, further comprising a step of collecting the received liquid.   The substrate to be processed is the second substrate, and the method is configured to apply the chemical solution onto the first substrate while rotating the first substrate at the third rotation speed before the rinsing process. The substrate processing method according to claim 14, further comprising a step of supplying and performing the chemical solution processing.   The substrate to be processed is the first substrate, and the method is performed on the first substrate while rotating the first substrate at a rotational speed lower than the first rotational speed before the rinsing process. The substrate processing method according to claim 14, further comprising a step of supplying a chemical solution different from the chemical solution to perform a different chemical treatment.   17. The substrate processing method according to claim 11, further comprising a step of discarding the liquid received in the draining cup during the rinsing process. A computer-readable storage medium that operates on a computer and stores a program for controlling the substrate processing apparatus,
The program is configured to control the substrate processing apparatus at the time of execution so as to surround the outside of the substrate held by the substrate holding unit that can rotate together with the substrate, and to receive the liquid scattered from the rotating substrate. A substrate processing method for performing substrate processing by supplying a chemical solution and a rinsing liquid inside the drainage cup is executed.
Supplying a rinse liquid to the substrate to perform a rinsing process;
Supplying the chemical solution to the substrate and performing chemical treatment on the substrate;
Comprising
When performing the chemical treatment with the chemical solution after the rinse treatment with the rinse solution,
First, the chemical liquid is supplied onto the substrate while rotating the substrate at a rotational speed equal to or higher than the rotational speed for the rinsing process to wash the drain cup with the chemical liquid, and the liquid received in the drain cup at that time Discard,
Thereafter, the chemical liquid is supplied onto the substrate while rotating the substrate at the number of revolutions for chemical liquid processing to perform chemical processing on the substrate, and the liquid received in the drain cup is collected at that time. Medium.

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