JP2007231407A - Solder plating conductor and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solder plating conductor and its manufacturing method which controls growth of an intermetallic compound layer which is high in brittleness at the interface between solder and a conductor, and does not reduce the joint strength at the solder junction even in an environment at a high temperature. <P>SOLUTION: This solder plating conductor includes a solder plating layer 4 around the conductor 1. Between the conductor 1 and the solder plating layer 4, there is an intermediate layer of 0.4 to 3.0 μm comprising an Ni layer 2 on the inner side and an intermetallic compound layer 3 of Ni and Sn (or Ni, Sn, and Cu) on the outer side. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a solder plated conductor whose connection strength does not decrease even when a soldered lead wire is held at a high temperature, and a method for manufacturing the same.

  Conventionally, Sn-Pb solder has been used in rectangular wire solder joints in high temperature use environments such as in-vehicle flexible flat cables (FFC) and multi-frame joiner (MFJ) solder joints. In accordance with regulations, Pb-free solder or conductive adhesive such as Sn—Ag, Sn—Ag—Cu, and Sn—Cu is being used.

  The prior art document information related to the invention of this application includes the following.

Japanese Patent Laid-Open No. 5-1367 Japanese Patent No. 2798512 Japanese Patent No. 2801793 Japanese Patent Laid-Open No. 2005-72115

In a solder connection portion of a rectangular wire in a high temperature use environment such as an in-vehicle FFC or MFJ, even if the holding temperature is not higher than the melting point of the solder material, there is a solid space between Sn in the solder material and Cu of the rectangular conductor. An intermetallic compound of Cu ₆ Sn ₅ (η phase) or Cu ₃ Sn (ε phase) is formed by phase diffusion. At this time, the higher the holding temperature, the more the solid phase diffusion proceeds and the thicker the intermetallic compound layer grows.

Intermetallic compounds are generally brittle, the fracture toughness value of Cu ₆ Sn ₅ (η phase) is 1.4 (MPa · m ^−1/2 ), and the fracture toughness value of Cu ₃ Sn (ε phase) is 1.7. (MPa · m ^−1/2 ), which is extremely small as compared to the fracture toughness value 10 ² to 10 ³ (MPa · m ^−1/2 ) of the solder material. Therefore, when these intermetallic compound layers grow thickly between the solder material and the rectangular conductor, breakage easily occurs in the compound layer or at the interface between the compound layer and the solder material (or the compound layer and the rectangular conductor). The problem is that the reliability of the parts is significantly reduced.

  Therefore, an object of the present invention is to suppress the growth of a highly brittle intermetallic compound layer at the interface between the solder and the conductor, and to prevent the solder-plated conductor from deteriorating the bonding strength of the solder joint even in a high temperature holding environment. It is in providing the manufacturing method.

  In order to achieve the above object, according to the first aspect of the present invention, there is provided a solder plating conductor in which a solder plating layer is provided around a conductor, an inner layer Ni layer and an outer layer between the conductor and the solder plating layer. A solder plated conductor comprising a 0.4 to 3.0 [mu] m intermediate layer composed of Ni and Sn on the side or an intermetallic compound layer of Ni, Sn and Cu.

  In the invention of claim 2, the solder plating layer is any one of a Sn-Pb-based, Sn-Ag-based solder material not containing Cu, or a Sn-Ag-Cu-based solder material containing Sn or a Sn-Cu-based solder material. It is a solder plating conductor of Claim 1 comprised by these.

  The invention according to claim 3 is the solder plated conductor according to claim 1, wherein the conductor has a round cross section or a rectangular cross section.

  The invention according to claim 4 is a conductor in which a Ni layer having a thickness of 0.3 to 3.0 μm is formed by performing electrolytic Ni plating on a conductor made of a simple substance of Cu or a composite material using Cu, and then a Ni layer is formed. Between the conductor and the solder plating layer, between the Ni layer on the inner layer side and Ni and Sn on the outer layer side, or between the metals of Ni, Sn and Cu A method for producing a solder-plated conductor, comprising forming a 0.4 to 3.0 μm intermediate layer composed of a compound layer.

  The invention of claim 5 is to perform electrolytic Ni plating on a single wire composed of a simple substance of Cu or a composite material using Cu to form a Ni layer having a thickness of 0.5 to 10 μm, and then rolling the single wire. Then, the cross-sectional shape is formed into a rectangular shape, and finally, a solder plating layer is formed around the conductor formed into a rectangular shape to form a solder plating layer, so that Ni on the inner layer side is formed between the conductor and the solder plating layer. Forming a 0.4 to 3.0 [mu] m intermediate layer composed of a layer and an outer layer-side Ni and Sn or an intermetallic compound layer of Ni, Sn and Cu It is.

  In the invention of claim 6, electrolytic Ni plating is performed on a single wire made of Cu or a composite material with Cu to form a Ni layer having a thickness of 0.5 to 10 μm, and then a plurality of the single wires are twisted to form a stranded wire. Then, the cross-sectional shape is formed into a rectangular shape by rolling the stranded wire, and finally, the solder plating layer is formed by performing molten solder plating around the conductor formed into the rectangular shape. The intermediate layer of 0.4 to 3.0 μm composed of the Ni layer on the inner layer side and Ni and Sn on the outer layer side or the intermetallic compound layer of Ni, Sn and Cu between the conductor and the solder plating layer A method for producing a solder-plated conductor, characterized in that a layer is formed.

  The solder-plated conductor of the present invention can suppress the growth of an intermetallic compound layer at the interface between the solder and the conductor even under a high temperature use environment, and the long-term reliability at the solder connection portion is good.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 shows a cross-sectional view of a solder plated conductor according to a preferred embodiment of the present invention. The solder plating conductor shown in FIG. 1 has a solder plating layer 4 around a flat conductor 1, and an Ni layer 2 on the inner layer side, Ni on the outer layer side, and Ni between the flat conductor 1 and the solder plating layer 4. An intermediate layer of 0.4 to 3.0 μm composed of an intermetallic compound layer 3 of Sn (or Ni, Sn, and Cu) is provided. That is, the solder plating conductor has the Ni layer 2, the intermetallic compound layer 3 of Ni and Sn (or Ni, Sn, and Cu), and the solder plating layer 4 in this order from the inner layer side on the surface of the flat conductor 1.

  The solder plating conductor according to the present embodiment is manufactured by the following procedure.

  First, electrolytic Ni plating is applied to the rectangular conductor 1, and an electrolytic Ni plating layer (Ni layer) 2 having a thickness of 0.3 to 3.0 μm is formed around the rectangular conductor 1. Next, when the flat conductor 1 having the Ni layer 2 is subjected to hot-dip solder plating, Sn (or Sn and Cu) as the main component of the solder reacts with a part of Ni in the Ni layer 2 to form an intermetallic compound. The intermetallic compound layer 3 and the solder plating layer 4 are formed on the Ni layer 2. The Ni layer 2 and the intermetallic compound layer 3 serve as an intermediate layer. Since this intermediate layer functions as a barrier layer that prevents Cu of the flat conductor 1 from diffusing into the solder plating layer 4, an intermetallic compound of Sn and Cu is generated at the interface between the flat conductor 1 and the solder plating layer 4. Can be suppressed.

When the solder material (molten solder plating bath) constituting the solder plating layer 4 does not contain Cu such as Sn—Pb or Sn—Ag, Ni ₃ Sn ₄ , Ni ₃ Sn ₂ , Ni ₃ Sn Thus, an intermetallic compound of Sn and Ni is produced. When the solder material constituting the solder plating layer 4 contains Cu such as Sn—Ag—Cu type or Sn—Cu type, (Ni, Cu) ₆ Sn ₅ , (Ni, Cu) ₃ Sn, etc. An intermetallic compound of Sn, Ni and Cu is produced.

  These intermetallic compound layers 3 of Ni and Sn (or Ni, Sn and Cu) are also highly brittle, and when this intermetallic compound layer 3 grows thick, it causes breakage and peeling, but Ni is more than Cu. Since the reactivity with Sn is low, the layer thickness of the intermetallic compound layer 3 of Ni and Sn (or Ni, Sn, and Cu) can be kept thin. The reason why the thickness of the intermediate layer composed of the Ni layer 2 and the intermetallic compound layer 3 is 0.4 to 3.0 μm is to suppress Cu diffusion from the flat conductor 1 to the solder plating layer 4 when the thickness is less than 0.4 μm. This is because it is inadequate to do this, and if it exceeds 3.0 μm, it causes breakage and peeling as described above. The layer thickness of the intermediate layer substantially matches the layer thickness of the Ni layer 2 before molten solder plating (after electrolytic Ni plating), so the intermediate layer thickness can be adjusted by adjusting the plating conditions for electrolytic Ni plating. is there.

  Here, the reason why the Ni layer 2 is formed by electrolytic Ni plating is that the Ni plating layer by electroless Ni plating contains P, and therefore, under the high temperature holding environment, by the generation of an intermetallic compound of Sn and Ni, This is because Ni in the Ni plating layer is consumed, and a P concentrated layer is formed between the Ni layer and the intermetallic compound layer, and this P concentrated layer has a problem of causing breakage and peeling. Therefore, as the Ni plating, electrolytic Ni plating not containing P is desirable.

  In the present embodiment, the case of performing electrolytic Ni plating on the flat conductor 1 and then performing molten solder plating has been described. However, 0.5-10 μm electrolytic Ni plating is applied to a single wire (round cross section). The single wire may be rolled and processed into a rectangular shape, and then hot-dip solder plating may be performed. In this case, since the rolling process is performed after the electrolytic Ni plating, the thickness of the electrolytic Ni plating layer is set to be slightly thicker from 0.5 to 10 μm.

  FIG. 2 shows the relationship between the holding time and the thickness of the intermetallic compound layer of the solder plating conductor according to the present embodiment and the conventional solder plating conductor without the Ni layer at the time of holding at a high temperature at 130 ° C. The broken line connecting the circles indicates the solder plating conductor according to the present embodiment, and the broken line connecting the squares indicates the conventional solder plating conductor.

In the conventional solder plating conductor, when the holding time becomes long, the thickness of the intermetallic compound (Cu ₆ Sn ₅ , Cu ₃ Sn) layer suddenly increases, and after holding for 1000 hr, the thickness of the intermetallic compound layer is less than 6 μm. It became. On the other hand, in the solder plated conductor according to the present embodiment, the change in the thickness of the intermetallic compound (Ni ₃ Sn ₄ , (Ni, Cu) ₆ Sn ₅ etc.) layer is small even when the holding time is long. The layer thickness of the intermetallic compound layer was about 3 μm even after holding for 1000 hours. In the solder plated conductor according to the present embodiment, the thickness of the intermetallic compound layer after being maintained at 130 ° C. × 1000 hr could be suppressed to about ½ of the conventional solder plated conductor.

  FIG. 3 shows the relationship between the holding time and peel strength of the solder-plated conductor according to the present embodiment and the conventional solder-plated conductor having no Ni layer when held at a high temperature at 130 ° C. The broken line connecting the circles indicates the solder plating conductor according to the present embodiment, and the broken line connecting the squares indicates the conventional solder plating conductor.

The fracture form of the solder connection part in the initial stage of high temperature holding was ductile fracture of the solder material for both the conventional solder plating conductor and the solder plating conductor according to the present embodiment, and the peel strength was high and good. In conventional solder-plated conductors, when the holding time becomes longer, the ratio of occurrence of brittle fracture in the intermetallic compound layer composed of Cu ₆ Sn ₅ or Cu ₃ Sn in the solder connection portion or at the interface increases. The peel strength decreased to about 1/4 (about 10 N) of the initial stage. On the other hand, in the solder plated conductor according to the present embodiment, even when the holding time is long, no brittle fracture is observed in the intermetallic compound layer or at the interface of the solder connection portion, and the peel after holding for 1000 hr. The strength was as good as about 3/4 of the initial value (about 30N or more).

  Next, a modified example of the solder plating conductor according to the present embodiment will be described with reference to the accompanying drawings.

  FIG. 4 shows a cross-sectional view of a solder-plated conductor using a flat rectangular composite material as a conductor. The solder plating conductor shown as a modification in FIG. 4 has the same configuration as the solder plating conductor shown in FIG. 1 except for the configuration of the flat conductor 5. The flat conductor 1 shown in FIG. 1 is made of a simple substance of Cu (or Cu alloy), whereas the flat conductor 5 shown in FIG. 4 has a core material 6 made of Cu (or Cu alloy). It is sandwiched between clad materials 1a and 1b and clad. Although the constituent material of the core material 6 is not specifically limited, For example, Al, Ag, Au etc. are mentioned.

  As the flat conductor 5, the composite wire of the core material 6 and the skin material 1a (or 1b) may be subjected to electrolytic Ni plating, and the composite wire may be rolled to be processed into a flat shape.

  FIG. 5 shows a cross-sectional view of a solder-plated conductor using a flat conductor formed by rolling a stranded wire as a conductor. A solder plating conductor shown as another modification in FIG. 5 has a solder plating layer 4 around a substantially rectangular conductor 7, and the Ni layer 2 on the inner layer side between the rectangular conductor 7 and the solder plating layer 4. An intermediate layer of 0.4 to 3.0 [mu] m composed of Ni and Sn (or Ni, Sn and Cu) intermetallic compound layer 3 on the outer layer side is provided. This flat conductor 7 is obtained by performing electrolytic Ni plating on a single wire 8 made of Cu (or a Cu alloy or a composite material using Cu), twisting a plurality of single wires 8 to form a stranded wire, It is formed by rolling into a substantially rectangular shape.

It is a cross-sectional view of a solder plating conductor according to a preferred embodiment of the present invention. It is a figure which shows the relationship between the high temperature holding time and the thickness of an intermetallic compound layer in the solder plating conductor of FIG. 1 and the conventional solder plating conductor. It is a figure which shows the relationship between the high temperature holding time and peel strength in the solder plating conductor of FIG. 1, and the conventional solder plating conductor. It is a figure which shows the modification of the solder plating conductor of FIG. It is a figure which shows the other modification of the solder plating conductor of FIG.

Explanation of symbols

1 Flat conductor (conductor)
2 Ni layer 3 Intermetallic compound layer 4 Solder plating layer

Claims (6)

  In a solder plating conductor in which a solder plating layer is provided around the conductor, an inner layer Ni layer and an outer layer side Ni and Sn or an intermetallic compound of Ni, Sn and Cu between the conductor and the solder plating layer A solder-plated conductor comprising a 0.4 to 3.0 μm intermediate layer composed of layers.   The said solder plating layer was comprised with either the Sn-Pb type | system | group solder material which does not contain Cu, the Sn-Ag type | system | group solder material, or the Sn-Ag-Cu type | system | group, Sn-Cu type solder material containing Cu. Solder plating conductor as described.   The solder-plated conductor according to claim 1, wherein the conductor has a round cross section or a square cross section.   Electrolytic Ni plating is performed on a conductor composed of a simple substance of Cu or a composite material using Cu to form a Ni layer having a thickness of 0.3 to 3.0 μm, and then a molten solder plating is applied around the conductor on which the Ni layer is formed. By forming a solder plating layer, it is composed of an inner layer Ni layer and an outer layer side Ni and Sn or an intermetallic compound layer of Ni, Sn and Cu between the conductor and the solder plating layer. A method for producing a solder plated conductor, comprising forming an intermediate layer of 0.4 to 3.0 μm.   A single wire made of Cu alone or a composite material using Cu is subjected to electrolytic Ni plating to form a Ni layer having a thickness of 0.5 to 10 μm, and then the single wire is rolled to form a rectangular cross-sectional shape. Finally, by forming a solder plating layer by performing molten solder plating around the conductor formed into a flat rectangular shape, the Ni layer on the inner layer side and the Ni layer on the outer layer side are formed between the conductor and the solder plating layer. A method for producing a solder-plated conductor, comprising forming an intermediate layer of 0.4 to 3.0 μm composed of an intermetallic compound layer of Sn, Sn, or Ni, Sn, and Cu.   A single wire made of Cu or a composite material with Cu is subjected to electrolytic Ni plating to form a Ni layer having a thickness of 0.5 to 10 μm, and then a plurality of the single wires are twisted to form a stranded wire, The conductor and the solder plating layer are formed by forming a solder plating layer by forming a solder plating layer around the conductor formed into a rectangular shape by forming a cross-sectional shape into a rectangular shape by rolling the stranded wire. A 0.4 to 3.0 μm intermediate layer composed of an inner layer Ni layer and an outer layer Ni and Sn, or an Ni, Sn and Cu intermetallic compound layer is formed between A method for producing a solder-plated conductor.

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