JP2007188931A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2007188931A JP2007188931A JP2006003437A JP2006003437A JP2007188931A JP 2007188931 A JP2007188931 A JP 2007188931A JP 2006003437 A JP2006003437 A JP 2006003437A JP 2006003437 A JP2006003437 A JP 2006003437A JP 2007188931 A JP2007188931 A JP 2007188931A
- Authority
- JP
- Japan
- Prior art keywords
- test
- pad
- input
- circuit
- pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000012360 testing method Methods 0.000 claims abstract description 134
- 239000000523 sample Substances 0.000 description 26
- 239000000872 buffer Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 101100353526 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pca-2 gene Proteins 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 101150056798 bca-1 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 101150033824 PAA1 gene Proteins 0.000 description 1
- 101710183548 Pyridoxal 5'-phosphate synthase subunit PdxS Proteins 0.000 description 1
- 102100035459 Pyruvate dehydrogenase protein X component, mitochondrial Human genes 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31712—Input or output aspects
- G01R31/31713—Input or output interfaces for test, e.g. test pins, buffers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31721—Power aspects, e.g. power supplies for test circuits, power saving during test
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
本発明は、複数回のウェハーテスト工程にも耐えうる半導体装置を提供することを目的とする。
【解決手段】
半導体装置は、テスト対象回路1と、テスト対象外回路2と、前記テスト対象回路1に用いられる第1のパッド群と、前記テスト対象外回路2に用いられる第2のパッド群とを備え、前記第1のパッド群は少なくとも複数に分割されたパッドを含み、前記第2のパッド群はそれぞれ1つのパッドから構成されることを特徴とする。
【選択図】 図1
Description
2・・・テスト対象外回路
3・・・メモリ回路
4・・・ロジック回路
5・・・テスト制御回路
6・・・消費電力低減モード制御回路
10・・・テスト対象の入出力バッファ
11・・・クロック回路
11a・・・PLL回路
30・・・リセット回路
Claims (5)
- テスト対象回路と、
テスト対象外回路と、
前記テスト対象回路に用いられる第1のパッド群と、
前記テスト対象外回路に用いられる第2のパッド群とを備え、
前記第1のパッド群は少なくとも複数に分割されたパッドを含み、前記第2のパッド群はそれぞれ1つのパッドから構成されることを特徴とする半導体装置。 - 前記複数に分割されたパッド少なくとも、リセット信号が入力されるパッド、テストモードを決定するテスト制御信号が入力されるパッドを含むことを特徴とする請求項1に記載の半導体装置。
- 前記テスト制御信号はテスト制御回路に入力され、前記テスト制御回路は各テストモードを指定するテスト信号を生成することを特徴とする請求項2に記載の半導体装置。
- 前記第2のパッド群の入力専用パッドはプルアップまたはプルダウンされていることを特徴とする請求項1に記載の半導体装置。
- 前記第1のパッド群の入出力パッドが少なくとも複数に分割されていることを特徴とする請求項1記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006003437A JP2007188931A (ja) | 2006-01-11 | 2006-01-11 | 半導体装置 |
US11/619,824 US7408368B2 (en) | 2006-01-11 | 2007-01-04 | Semiconductor integrated circuit device having pads respectively provided with pad portions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006003437A JP2007188931A (ja) | 2006-01-11 | 2006-01-11 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007188931A true JP2007188931A (ja) | 2007-07-26 |
Family
ID=38232220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006003437A Pending JP2007188931A (ja) | 2006-01-11 | 2006-01-11 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7408368B2 (ja) |
JP (1) | JP2007188931A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7489449B2 (ja) | 2021-12-29 | 2024-05-23 | 台湾積體電路製造股▲ふん▼有限公司 | 窒化ガリウム系装置及びそのテスト方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100977718B1 (ko) * | 2008-11-06 | 2010-08-24 | 주식회사 하이닉스반도체 | 반도체 장치 |
KR20160029378A (ko) * | 2014-09-05 | 2016-03-15 | 에스케이하이닉스 주식회사 | 반도체 장치 |
KR20210105718A (ko) * | 2020-02-19 | 2021-08-27 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이를 갖는 메모리 시스템 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61235953A (ja) * | 1985-04-12 | 1986-10-21 | Hitachi Ltd | 1チツプマイクロコンピユ−タ |
JPH118277A (ja) * | 1997-06-13 | 1999-01-12 | Nec Corp | 半導体集積回路 |
JP2001177066A (ja) * | 1999-09-16 | 2001-06-29 | Samsung Electronics Co Ltd | 集積回路装置 |
JP2003114257A (ja) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 半導体装置のテスト回路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5554940A (en) * | 1994-07-05 | 1996-09-10 | Motorola, Inc. | Bumped semiconductor device and method for probing the same |
US5506499A (en) * | 1995-06-05 | 1996-04-09 | Neomagic Corp. | Multiple probing of an auxilary test pad which allows for reliable bonding to a primary bonding pad |
JP3459765B2 (ja) * | 1997-07-16 | 2003-10-27 | シャープ株式会社 | 実装検査システム |
US6002267A (en) * | 1997-07-23 | 1999-12-14 | International Business Machines Corp. | In-line voltage plane tests for multi-chip modules |
US6731128B2 (en) * | 2000-07-13 | 2004-05-04 | International Business Machines Corporation | TFI probe I/O wrap test method |
US6721920B2 (en) * | 2001-06-07 | 2004-04-13 | Agilent Technologies, Inc. | Systems and methods for facilitating testing of pad drivers of integrated circuits |
-
2006
- 2006-01-11 JP JP2006003437A patent/JP2007188931A/ja active Pending
-
2007
- 2007-01-04 US US11/619,824 patent/US7408368B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61235953A (ja) * | 1985-04-12 | 1986-10-21 | Hitachi Ltd | 1チツプマイクロコンピユ−タ |
JPH118277A (ja) * | 1997-06-13 | 1999-01-12 | Nec Corp | 半導体集積回路 |
JP2001177066A (ja) * | 1999-09-16 | 2001-06-29 | Samsung Electronics Co Ltd | 集積回路装置 |
JP2003114257A (ja) * | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 半導体装置のテスト回路 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7489449B2 (ja) | 2021-12-29 | 2024-05-23 | 台湾積體電路製造股▲ふん▼有限公司 | 窒化ガリウム系装置及びそのテスト方法 |
Also Published As
Publication number | Publication date |
---|---|
US7408368B2 (en) | 2008-08-05 |
US20070159203A1 (en) | 2007-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3788983B2 (ja) | 半導体集積回路装置 | |
KR20040036542A (ko) | 병렬 테스트 수행 장치 및 방법 | |
US20070288816A1 (en) | Semiconductor integrated circuit and test method therefor | |
JPH11316264A (ja) | 半導体装置の並列テスト回路 | |
JP2004212399A (ja) | チップサイズを縮小させるスキャンテスト回路を備えた半導体装置及びそのテスト方法 | |
US10677844B2 (en) | Semiconductor device and test method for semiconductor device | |
JPH0394183A (ja) | 半導体集積回路の試験方法及び回路 | |
JP2007188931A (ja) | 半導体装置 | |
US7739571B2 (en) | Semiconductor integrated circuit and system LSI having a test expected value programming circuit | |
JP2007272982A (ja) | 半導体記憶装置およびその検査方法 | |
EP0933644B1 (en) | Device scan testing | |
JP2000131389A (ja) | Icチップ内モジュールテスト制御方式 | |
JP2005024410A (ja) | 半導体集積回路装置 | |
JP3291706B2 (ja) | 論理回路の高速動作検証方法、及び、論理回路 | |
JP3189696B2 (ja) | 半導体集積回路及び半導体装置並びにそのテスト方法 | |
JP4220141B2 (ja) | マルチチップモジュール | |
JPH09160802A (ja) | テスト装置 | |
US6888367B1 (en) | Method and apparatus for testing integrated circuit core modules | |
JP2003156542A (ja) | テスト方法および半導体装置 | |
JPH1073642A (ja) | ディレー評価回路付き集積回路 | |
JP5625241B2 (ja) | 半導体装置及びその試験方法 | |
JP2002243801A (ja) | 半導体集積回路 | |
JP2004134628A (ja) | 半導体装置 | |
JP2672408B2 (ja) | 半導体集積回路 | |
JPH04128666A (ja) | 半導体集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080731 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110916 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110922 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111111 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20111125 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20111205 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111220 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120413 |