JP2006245020A - 発光ダイオード素子とその製造方法 - Google Patents
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
【解決手段】 本発明のLED素子は、LEDチップと、LEDチップからの光によって励起し、LEDチップからの光と異なる波長の光を発する蛍光物質と、蛍光物質を保持する透光性樹脂とをパッケージ内に備え、LEDチップは、側面部と天面部とを有し、側面部が、パッケージの開口部に向かって凸状に傾斜する斜面を有することを特徴とする。蛍光物質は、LEDチップの側面部の全部または一部を覆うように、パッケージの底面上に層状に配置する態様が好ましい。
【選択図】 図1
Description
本発明のLED素子の典型的な例として、表面実装型発光ダイオード素子の斜視図を図1(a)に示す。図1(b)はその断面図である。この素子は、金属板からなる正負一対の電極5、6と、耐熱性樹脂からなるパッケージ4を有する。パッケージ4は、インサート成型により形成することができ、反射カップ形状を呈している。LEDチップ1は、側面部と天面部を有し、側面部の一部が斜面構造となっている。LEDチップ1は、パッケージ4内で一方の電極5に導電性材料3を介して電気的に接続し、金属細線2によって他方の電極6に電気的に接続している。
本発明のLED素子の製造方法は、前述のLED素子の製造方法であって、蛍光物質を有する透光性樹脂をパッケージ内に注入する工程と、パッケージに振動を与えることにより、蛍光物質を有する層をパッケージの底面上に形成する工程と、透光性樹脂を加熱硬化する工程とを備えることを特徴とする。
Claims (8)
- 発光ダイオードチップと、
該発光ダイオードチップからの光によって励起し、発光ダイオードチップからの光と異なる波長の光を発する蛍光物質と、
該蛍光物質を保持する透光性樹脂と
をパッケージ内に備える発光ダイオード素子であって、
前記発光ダイオードチップは、側面部と天面部とを有し、前記側面部が、パッケージの開口部に向かって凸状に傾斜する斜面を有することを特徴とする発光ダイオード素子。 - 前記蛍光物質は、発光ダイオードチップの側面部の全部または一部を覆うように、パッケージの底面上に層状に配置する請求項1に記載の発光ダイオード素子。
- 前記蛍光物質は、発光ダイオードチップの天面部上に配置しないか、または、天面部上に配置するとしても、天面部上に配置する粒子層は、側面部上に配置する粒子層と比較して薄いことを特徴とする請求項1または2に記載の発光ダイオード素子。
- 前記蛍光物質は、形状が粒子状であり、外径が中央値の±50%の範囲内となるように選別している請求項1〜3のいずれかに記載の発光ダイオード素子。
- 発光ダイオードチップの前記斜面は、発光ダイオードチップの発光層より、パッケージの開口部側に位置する請求項1〜4のいずれかに記載の発光ダイオード素子。
- 前記蛍光物質は、発光ダイオードチップからの光により異なる波長の光を発する2種類以上の蛍光物質からなる請求項1〜5のいずれかに記載の発光ダイオード素子。
- 請求項1〜6のいずれかに記載の発光ダイオード素子の製造方法であって、
蛍光物質を有する透光性樹脂をパッケージ内に注入する工程と、
前記パッケージに振動を与えることにより、蛍光物質を有する層をパッケージの底面上に形成する工程と、
前記透光性樹脂を加熱硬化する工程と
を備える発光ダイオード素子の製造方法。 - 蛍光物質を有する透光性樹脂をパッケージ内に注入する前記工程は、
透光性樹脂中で蛍光物質を沈殿させる工程と、
沈殿させた前記蛍光物質を有する透光性樹脂をパッケージに注入する工程と、
前記蛍光物質を有しない透光性樹脂をパッケージに注入する工程と
を備える請求項7に記載の発光ダイオード素子の製造方法。
Priority Applications (3)
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JP2005054141A JP2006245020A (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード素子とその製造方法 |
US11/365,560 US20060193121A1 (en) | 2005-02-28 | 2006-02-28 | Light-emitting diode device and method of manufacturing thereof |
CNB2006100514602A CN100397668C (zh) | 2005-02-28 | 2006-02-28 | 发光二极管器件及其制造方法 |
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JP2005054141A JP2006245020A (ja) | 2005-02-28 | 2005-02-28 | 発光ダイオード素子とその製造方法 |
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Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007111118A1 (ja) * | 2006-03-28 | 2007-10-04 | Alps Electric Co., Ltd. | 発光装置 |
JP2009170759A (ja) * | 2008-01-18 | 2009-07-30 | Sanyo Electric Co Ltd | 発光装置及びそれを備えた灯具 |
US7687823B2 (en) | 2006-12-26 | 2010-03-30 | Nichia Corporation | Light-emitting apparatus and method of producing the same |
JP2010517289A (ja) * | 2007-01-22 | 2010-05-20 | クリー インコーポレイテッド | ウェーハレベルの燐光体被覆方法およびその方法を利用して製作される装置 |
JP2011096936A (ja) * | 2009-10-30 | 2011-05-12 | Alpha- Design Kk | 半導体発光ディバイス製造装置 |
WO2011105433A1 (ja) * | 2010-02-26 | 2011-09-01 | 三洋電機株式会社 | 発光デバイス |
KR101116475B1 (ko) | 2008-11-05 | 2012-03-07 | 가부시끼가이샤 도시바 | 형광체 용액, 발광 디바이스 및 그 제조방법 |
US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
KR101207935B1 (ko) * | 2010-05-31 | 2012-12-04 | 주식회사 프로텍 | Led 소자 제조 방법 |
JP2014093311A (ja) * | 2012-10-31 | 2014-05-19 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
US8778601B2 (en) | 2010-03-05 | 2014-07-15 | Rohm and Haas Electronic Materials | Methods of forming photolithographic patterns |
JP2014192502A (ja) * | 2013-03-28 | 2014-10-06 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
JP2014195046A (ja) * | 2013-02-28 | 2014-10-09 | Nichia Chem Ind Ltd | 発光装置及びそれを備える照明装置 |
US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
JP2015012194A (ja) * | 2013-06-28 | 2015-01-19 | 日亜化学工業株式会社 | 発光装置 |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
US9117987B2 (en) | 2013-07-30 | 2015-08-25 | Nichia Corporation | Light emitting device and method for manufacturing light emitting device |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
US9196799B2 (en) | 2007-01-22 | 2015-11-24 | Cree, Inc. | LED chips having fluorescent substrates with microholes and methods for fabricating |
US9484507B2 (en) | 2013-06-28 | 2016-11-01 | Nichia Corporation | Light emitting device |
JP2017123393A (ja) * | 2016-01-07 | 2017-07-13 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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